Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (148646) > Seite 1139 nach 2478

Wählen Sie Seite:   [  << Vorherige Seite ]  1 247 494 741 988 1134 1135 1136 1137 1138 1139 1140 1141 1142 1143 1144 1235 1482 1729 1976 2223 2470 2478  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AR0521SR2C09SURA0-DR AR0521SR2C09SURA0-DR onsemi ar0521?pdf=Y Description: IMAGE SENSOR 5MP 1/2 CIS SO
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 1211 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.46 EUR
5+32.47 EUR
10+31.35 EUR
25+30.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AR0521SR2C09SURA0-DP AR0521SR2C09SURA0-DP onsemi ar0521?pdf=Y Description: 5MP 1/2 CIS SO
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 1538 Stücke:
Lieferzeit 10-14 Tag (e)
1+39.92 EUR
5+36.55 EUR
10+35.3 EUR
25+33.8 EUR
50+32.77 EUR
100+31.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AR0135CS2M00SUEA0-DPBR AR0135CS2M00SUEA0-DPBR onsemi ar0135cs?pdf=Y Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
auf Bestellung 2201 Stücke:
Lieferzeit 10-14 Tag (e)
1+41.13 EUR
5+37.66 EUR
10+36.38 EUR
25+34.84 EUR
50+33.79 EUR
100+32.82 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AR0522SRSM09SURA0-DP AR0522SRSM09SURA0-DP onsemi AR0522_Web.pdf Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 1997 Stücke:
Lieferzeit 10-14 Tag (e)
1+41.38 EUR
5+37.9 EUR
10+36.6 EUR
25+35.06 EUR
50+34 EUR
100+33.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AR0234CSSC28SUKA0-CP AR0234CSSC28SUKA0-CP onsemi ar0234cs?pdf=Y Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
auf Bestellung 3682 Stücke:
Lieferzeit 10-14 Tag (e)
1+51.96 EUR
5+47.71 EUR
10+46.13 EUR
25+44.24 EUR
50+42.95 EUR
100+41.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AR0234CSSC00SUKA0-CP AR0234CSSC00SUKA0-CP onsemi ar0234cs?pdf=Y Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
auf Bestellung 2420 Stücke:
Lieferzeit 10-14 Tag (e)
1+51.96 EUR
5+47.71 EUR
10+46.13 EUR
25+44.24 EUR
50+42.95 EUR
100+41.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH040F120MNF1PTG NXH040F120MNF1PTG onsemi nxh040f120mnf1-d.pdf Description: MOSFET 4N-CH 1200V 30A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
1+198.37 EUR
28+170.38 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH040F120MNF1PG NXH040F120MNF1PG onsemi nxh040f120mnf1-d.pdf Description: MOSFET 4N-CH 1200V 30A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
1+120 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH020F120MNF1PG NXH020F120MNF1PG onsemi nxh020f120mnf1-d.pdf Description: MOSFET 4N-CH 1200V 51A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
1+228.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH020F120MNF1PTG onsemi nxh020f120mnf1-d.pdf Description: MOSFET 4N-CH 1200V 51A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
1+253.9 EUR
10+228.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
1N456ATR 1N456ATR onsemi 1n456a-d.pdf Description: DIODE GEN PURP 30V 500MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 25 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.033 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
1N456ATR 1N456ATR onsemi 1n456a-d.pdf Description: DIODE GEN PURP 30V 500MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 25 V
auf Bestellung 39952 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
105+0.17 EUR
214+0.083 EUR
500+0.069 EUR
1000+0.048 EUR
2000+0.041 EUR
5000+0.038 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
NTHL040N120M3S NTHL040N120M3S onsemi nthl040n120m3s-d.pdf Description: SIC MOS TO247-3L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 131268 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.65 EUR
30+9.94 EUR
120+9.34 EUR
510+9.12 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTH4L040N120SC1 NTH4L040N120SC1 onsemi nth4l040n120sc1-d.pdf Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
auf Bestellung 3282 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.49 EUR
30+21.24 EUR
120+19.9 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG040N120SC1 NVBG040N120SC1 onsemi nvbg040n120sc1-d.pdf Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 14400 Stücke:
Lieferzeit 10-14 Tag (e)
800+25.52 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NVBG040N120SC1 NVBG040N120SC1 onsemi nvbg040n120sc1-d.pdf Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 15271 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.74 EUR
10+31.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVH4L040N120M3S NVH4L040N120M3S onsemi nvh4l040n120m3s-d.pdf Description: SIC MOS TO247-4L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -3V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
1+30.47 EUR
30+19.68 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVHL040N120SC1 NVHL040N120SC1 onsemi nvhl040n120sc1-d.pdf Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 565 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.67 EUR
30+23.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVH4L040N120SC1 NVH4L040N120SC1 onsemi nvh4l040n120sc1-d.pdf Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 158171 Stücke:
Lieferzeit 10-14 Tag (e)
1+30.8 EUR
30+25.85 EUR
120+24.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTH4L040N120M3S NTH4L040N120M3S onsemi nth4l040n120m3s-d.pdf Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 64837 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.88 EUR
30+13.2 EUR
120+12.09 EUR
510+11.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG040N120M3S NVBG040N120M3S onsemi NVBG040N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 56800 Stücke:
Lieferzeit 10-14 Tag (e)
800+16.69 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NVBG040N120M3S NVBG040N120M3S onsemi NVBG040N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 57442 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.24 EUR
10+21.24 EUR
100+20.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG040N120M3S NTBG040N120M3S onsemi NTBG040N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+7.45 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NTBG040N120M3S NTBG040N120M3S onsemi NTBG040N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 1741 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.93 EUR
10+10.99 EUR
100+9.12 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTBG040N120SC1 NTBG040N120SC1 onsemi ntbg040n120sc1-d.pdf Description: SICFET N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
auf Bestellung 35200 Stücke:
Lieferzeit 10-14 Tag (e)
800+21.41 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NTBG040N120SC1 NTBG040N120SC1 onsemi ntbg040n120sc1-d.pdf Description: SICFET N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
auf Bestellung 35748 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.12 EUR
10+23.87 EUR
100+23.58 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTHL040N120SC1 NTHL040N120SC1 onsemi nthl040n120sc1-d.pdf Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
auf Bestellung 1866 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.63 EUR
30+20.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTC040N120SC1 NTC040N120SC1 onsemi ntc040n120sc1-d.pdf Description: SIC MOS WAFER SALES 40MOHM 1200V
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
auf Bestellung 20754 Stücke:
Lieferzeit 10-14 Tag (e)
819+18.26 EUR
Mindestbestellmenge: 819
Im Einkaufswagen  Stück im Wert von  UAH
FFSP10120A FFSP10120A onsemi ffsp10120a-d.pdf Description: DIODE SIL CARB 1200V 10A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 129 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.09 EUR
50+5 EUR
100+4.92 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FFSP1065B FFSP1065B onsemi ffsp1065b-d.pdf Description: DIODE SIL CARB 650V 11A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 9413 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.83 EUR
50+2.96 EUR
100+2.68 EUR
500+2.2 EUR
1000+2.04 EUR
2000+1.96 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FFSP1265A FFSP1265A onsemi ffsp1265a-d.pdf Description: DIODE SIL CARB 650V 15A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 665pF @ 1V, 100kHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 758 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.98 EUR
50+3.42 EUR
100+3.31 EUR
500+3.09 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FFSP1065A FFSP1065A onsemi ffsp1065a-d.pdf Description: DIODE SIL CARB 650V 15A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 50286 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.14 EUR
50+3.48 EUR
100+3.26 EUR
500+3.02 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FFSP1065B-F085 FFSP1065B-F085 onsemi ffsp1065b-f085-d.pdf Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 772 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.46 EUR
10+4.26 EUR
100+3.01 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FFSP1665A FFSP1665A onsemi ffsp1665a-d.pdf Description: DIODE SIL CARB 650V 16A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 887pF @ 1V, 100kHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 1867 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.08 EUR
10+5.49 EUR
100+4.39 EUR
800+3.56 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FFSP15120A FFSP15120A onsemi ffsp15120a-d.pdf Description: DIODE SIL CARB 1200V 15A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 936pF @ 1V, 100kHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.39 EUR
50+5.92 EUR
100+5.63 EUR
500+5.1 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN531335DW1T3G NSVMUN531335DW1T3G onsemi mun531335dw1-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms, 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.07 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN531335DW1T3G NSVMUN531335DW1T3G onsemi mun531335dw1-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms, 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
71+0.25 EUR
113+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
2000+0.09 EUR
5000+0.078 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
NCT7491MNTXG NCT7491MNTXG onsemi nct7491-d.pdf Description: IC REMOTE THERMAL MONITOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Output Type: 2-Wire Serial, I2C/SMBUS
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor)
Accuracy: ±3.5°C
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Internal and External
Sensing Temperature: 0°C ~ 85°C, -40°C ~ 125°C
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 24-QFN (4x4)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCT7491MNTXG NCT7491MNTXG onsemi nct7491-d.pdf Description: IC REMOTE THERMAL MONITOR 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Output Type: 2-Wire Serial, I2C/SMBUS
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor)
Accuracy: ±3.5°C
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Internal and External
Sensing Temperature: 0°C ~ 85°C, -40°C ~ 125°C
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 24-QFN (4x4)
auf Bestellung 3895 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.97 EUR
10+4.5 EUR
25+3.85 EUR
100+3.12 EUR
250+2.76 EUR
500+2.54 EUR
1000+2.36 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
AFGHL75T65SQDC AFGHL75T65SQDC onsemi afghl75t65sqdc-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/107.2ns
Switching Energy: 1.68mJ (on), 1.11mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 139 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Qualification: AEC-Q101
auf Bestellung 2128 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.9 EUR
30+8.82 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FGH4L75T65MQDC50 FGH4L75T65MQDC50 onsemi fgh4l75t65mqdc50-d.pdf Description: IGBT FS 650V 110A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 29ns/187ns
Switching Energy: 720µJ (on), 960µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 146 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 385 W
auf Bestellung 438 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.53 EUR
30+10.48 EUR
120+8.94 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC20MELG MC74AC20MELG onsemi mc74ac20-d.pdf Description: IC GATE NAND 2CH 4-INP SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 4
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
auf Bestellung 9500 Stücke:
Lieferzeit 10-14 Tag (e)
807+0.62 EUR
Mindestbestellmenge: 807
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC20NG MC74AC20NG onsemi mc74ac20-d.pdf Description: IC GATE NAND 2CH 4-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 4
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
auf Bestellung 23240 Stücke:
Lieferzeit 10-14 Tag (e)
1158+0.44 EUR
Mindestbestellmenge: 1158
Im Einkaufswagen  Stück im Wert von  UAH
NTP360N80S3Z NTP360N80S3Z onsemi ntp360n80s3z-d.pdf Description: MOSFET N-CH 800V 13A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 300µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 400 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
167+2.9 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
1N5234B 1N5234B onsemi 1n5221b-d.pdf Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
auf Bestellung 141480 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
170+0.1 EUR
390+0.045 EUR
500+0.042 EUR
1000+0.039 EUR
2000+0.038 EUR
5000+0.037 EUR
10000+0.03 EUR
50000+0.027 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
NXH100B120H3Q0PG NXH100B120H3Q0PG onsemi nxh100b120h3q0-d.pdf Description: PIM 60-80KW Q0BOOST-L57 1200V, 1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 61 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
1+103.66 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH100B120H3Q0PTG NXH100B120H3Q0PTG onsemi nxh100b120h3q0-d.pdf Description: IGBT MODULE 1200V 50A 186W 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
auf Bestellung 262 Stücke:
Lieferzeit 10-14 Tag (e)
1+109.17 EUR
24+83.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH100B120H3Q0SG NXH100B120H3Q0SG onsemi nxh100b120h3q0-d.pdf Description: PIM 60-80KW Q0BOOST-L57 1200V, 1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 61 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
auf Bestellung 236 Stücke:
Lieferzeit 10-14 Tag (e)
1+103.66 EUR
24+78.98 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH100B120H3Q0STG NXH100B120H3Q0STG onsemi nxh100b120h3q0-d.pdf Description: IGBT MODULE 1200V 50A 186W PIM22
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
1+87.35 EUR
24+83.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH40B120MNQ0SNG onsemi nxh40b120mnq0-d.pdf Description: 80KW GENII 1200V 80MOHM SIC MOSF
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
Power - Max: 118 W
Input Capacitance (Cies) @ Vce: 3.227 nF @ 20 V
auf Bestellung 2543 Stücke:
Lieferzeit 10-14 Tag (e)
1+131.96 EUR
24+105.68 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTH4L015N065SC1 NTH4L015N065SC1 onsemi nth4l015n065sc1-d.pdf Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
auf Bestellung 7224 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.28 EUR
30+28.03 EUR
120+26.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTHL015N065SC1 NTHL015N065SC1 onsemi nthl015n065sc1-d.pdf Description: SILICON CARBIDE (SIC) MOSFET - 1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 643W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
auf Bestellung 1496 Stücke:
Lieferzeit 10-14 Tag (e)
1+45.34 EUR
30+29.75 EUR
120+28.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTH4L014N120M3P NTH4L014N120M3P onsemi nth4l014n120m3p-d.pdf Description: SIC MOSFET 1200 V 14 MOHM M3P SE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 74A, 18V
Power Dissipation (Max): 686W (Tc)
Vgs(th) (Max) @ Id: 4.63V @ 37mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 329 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 800 V
auf Bestellung 2070 Stücke:
Lieferzeit 10-14 Tag (e)
1+45.5 EUR
10+33.33 EUR
450+28.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MPSA18RLRAG MPSA18RLRAG onsemi mpsa18-d.pdf Description: TRANS NPN 45V 0.2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 132913 Stücke:
Lieferzeit 10-14 Tag (e)
3122+0.15 EUR
Mindestbestellmenge: 3122
Im Einkaufswagen  Stück im Wert von  UAH
MPSA18RLRMG MPSA18RLRMG onsemi mpsa18-d.pdf Description: TRANS NPN 45V 0.2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 33565 Stücke:
Lieferzeit 10-14 Tag (e)
3122+0.15 EUR
Mindestbestellmenge: 3122
Im Einkaufswagen  Stück im Wert von  UAH
CAT1832Z-GT3 CAT1832Z-GT3 onsemi ONSM-S-A0000710844-1.pdf?t.download=true&u=5oefqw Description: CAT1832 - 3.3V SUPPLY MONITOR, W
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 2.55V, 2.88V
Supplier Device Package: 8-MSOP
DigiKey Programmable: Not Verified
auf Bestellung 11801 Stücke:
Lieferzeit 10-14 Tag (e)
364+1.33 EUR
Mindestbestellmenge: 364
Im Einkaufswagen  Stück im Wert von  UAH
CAT1232LPZ-GT3 CAT1232LPZ-GT3 onsemi CAT1232LP%2CCAT1832.pdf Description: IC SUPERVISOR 1 CHANNEL 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Output: Open Drain, Push-Pull
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.37V, 4.62V
Supplier Device Package: 8-MSOP
DigiKey Programmable: Not Verified
auf Bestellung 1322 Stücke:
Lieferzeit 10-14 Tag (e)
398+1.23 EUR
Mindestbestellmenge: 398
Im Einkaufswagen  Stück im Wert von  UAH
NXH240B120H3Q1PG NXH240B120H3Q1PG onsemi nxh240b120h3q1pg-d.pdf Description: PIM Q1 3 CHANNEL IGBT+SIC BOOST
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: 32-PIM (71x37.4)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 158 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 18.151 nF @ 20 V
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
1+124.13 EUR
21+118.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH350N100H4Q2F2P1G NXH350N100H4Q2F2P1G onsemi nxh350n100h4q2f2p1g-d.pdf Description: IC PWR MODULE 1000V 350A PIM42
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 303 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 276 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
1+269.9 EUR
12+244.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH450B100H4Q2F2PG NXH450B100H4Q2F2PG onsemi nxh450b100h4q2f2-d.pdf Description: 1000V,75A FSIII IGBT, MID SPEED
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: 56-PIM (93x47)
Current - Collector (Ic) (Max): 101 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 234 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
1+193.86 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AR0521SR2C09SURA0-DR ar0521?pdf=Y
AR0521SR2C09SURA0-DR
Hersteller: onsemi
Description: IMAGE SENSOR 5MP 1/2 CIS SO
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 1211 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.46 EUR
5+32.47 EUR
10+31.35 EUR
25+30.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AR0521SR2C09SURA0-DP ar0521?pdf=Y
AR0521SR2C09SURA0-DP
Hersteller: onsemi
Description: 5MP 1/2 CIS SO
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 1538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+39.92 EUR
5+36.55 EUR
10+35.3 EUR
25+33.8 EUR
50+32.77 EUR
100+31.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AR0135CS2M00SUEA0-DPBR ar0135cs?pdf=Y
AR0135CS2M00SUEA0-DPBR
Hersteller: onsemi
Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
auf Bestellung 2201 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.13 EUR
5+37.66 EUR
10+36.38 EUR
25+34.84 EUR
50+33.79 EUR
100+32.82 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AR0522SRSM09SURA0-DP AR0522_Web.pdf
AR0522SRSM09SURA0-DP
Hersteller: onsemi
Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 1997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.38 EUR
5+37.9 EUR
10+36.6 EUR
25+35.06 EUR
50+34 EUR
100+33.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AR0234CSSC28SUKA0-CP ar0234cs?pdf=Y
AR0234CSSC28SUKA0-CP
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
auf Bestellung 3682 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+51.96 EUR
5+47.71 EUR
10+46.13 EUR
25+44.24 EUR
50+42.95 EUR
100+41.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AR0234CSSC00SUKA0-CP ar0234cs?pdf=Y
AR0234CSSC00SUKA0-CP
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
auf Bestellung 2420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+51.96 EUR
5+47.71 EUR
10+46.13 EUR
25+44.24 EUR
50+42.95 EUR
100+41.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH040F120MNF1PTG nxh040f120mnf1-d.pdf
NXH040F120MNF1PTG
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 30A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+198.37 EUR
28+170.38 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH040F120MNF1PG nxh040f120mnf1-d.pdf
NXH040F120MNF1PG
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 30A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+120 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH020F120MNF1PG nxh020f120mnf1-d.pdf
NXH020F120MNF1PG
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 51A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+228.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH020F120MNF1PTG nxh020f120mnf1-d.pdf
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 51A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+253.9 EUR
10+228.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
1N456ATR 1n456a-d.pdf
1N456ATR
Hersteller: onsemi
Description: DIODE GEN PURP 30V 500MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 25 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.033 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
1N456ATR 1n456a-d.pdf
1N456ATR
Hersteller: onsemi
Description: DIODE GEN PURP 30V 500MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 25 V
auf Bestellung 39952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
105+0.17 EUR
214+0.083 EUR
500+0.069 EUR
1000+0.048 EUR
2000+0.041 EUR
5000+0.038 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
NTHL040N120M3S nthl040n120m3s-d.pdf
NTHL040N120M3S
Hersteller: onsemi
Description: SIC MOS TO247-3L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 131268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.65 EUR
30+9.94 EUR
120+9.34 EUR
510+9.12 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTH4L040N120SC1 nth4l040n120sc1-d.pdf
NTH4L040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
auf Bestellung 3282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.49 EUR
30+21.24 EUR
120+19.9 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG040N120SC1 nvbg040n120sc1-d.pdf
NVBG040N120SC1
Hersteller: onsemi
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 14400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+25.52 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NVBG040N120SC1 nvbg040n120sc1-d.pdf
NVBG040N120SC1
Hersteller: onsemi
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 15271 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.74 EUR
10+31.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVH4L040N120M3S nvh4l040n120m3s-d.pdf
NVH4L040N120M3S
Hersteller: onsemi
Description: SIC MOS TO247-4L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -3V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.47 EUR
30+19.68 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVHL040N120SC1 nvhl040n120sc1-d.pdf
NVHL040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 565 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.67 EUR
30+23.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVH4L040N120SC1 nvh4l040n120sc1-d.pdf
NVH4L040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 158171 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.8 EUR
30+25.85 EUR
120+24.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTH4L040N120M3S nth4l040n120m3s-d.pdf
NTH4L040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 64837 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.88 EUR
30+13.2 EUR
120+12.09 EUR
510+11.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG040N120M3S NVBG040N120M3S-D.PDF
NVBG040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 56800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+16.69 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NVBG040N120M3S NVBG040N120M3S-D.PDF
NVBG040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 57442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.24 EUR
10+21.24 EUR
100+20.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG040N120M3S NTBG040N120M3S-D.PDF
NTBG040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+7.45 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NTBG040N120M3S NTBG040N120M3S-D.PDF
NTBG040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 1741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.93 EUR
10+10.99 EUR
100+9.12 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTBG040N120SC1 ntbg040n120sc1-d.pdf
NTBG040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
auf Bestellung 35200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+21.41 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NTBG040N120SC1 ntbg040n120sc1-d.pdf
NTBG040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
auf Bestellung 35748 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.12 EUR
10+23.87 EUR
100+23.58 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTHL040N120SC1 nthl040n120sc1-d.pdf
NTHL040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
auf Bestellung 1866 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.63 EUR
30+20.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTC040N120SC1 ntc040n120sc1-d.pdf
NTC040N120SC1
Hersteller: onsemi
Description: SIC MOS WAFER SALES 40MOHM 1200V
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
auf Bestellung 20754 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
819+18.26 EUR
Mindestbestellmenge: 819
Im Einkaufswagen  Stück im Wert von  UAH
FFSP10120A ffsp10120a-d.pdf
FFSP10120A
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 129 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.09 EUR
50+5 EUR
100+4.92 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FFSP1065B ffsp1065b-d.pdf
FFSP1065B
Hersteller: onsemi
Description: DIODE SIL CARB 650V 11A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 9413 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.83 EUR
50+2.96 EUR
100+2.68 EUR
500+2.2 EUR
1000+2.04 EUR
2000+1.96 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FFSP1265A ffsp1265a-d.pdf
FFSP1265A
Hersteller: onsemi
Description: DIODE SIL CARB 650V 15A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 665pF @ 1V, 100kHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 758 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.98 EUR
50+3.42 EUR
100+3.31 EUR
500+3.09 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FFSP1065A ffsp1065a-d.pdf
FFSP1065A
Hersteller: onsemi
Description: DIODE SIL CARB 650V 15A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 50286 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.14 EUR
50+3.48 EUR
100+3.26 EUR
500+3.02 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FFSP1065B-F085 ffsp1065b-f085-d.pdf
FFSP1065B-F085
Hersteller: onsemi
Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 772 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.46 EUR
10+4.26 EUR
100+3.01 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FFSP1665A ffsp1665a-d.pdf
FFSP1665A
Hersteller: onsemi
Description: DIODE SIL CARB 650V 16A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 887pF @ 1V, 100kHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 1867 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.08 EUR
10+5.49 EUR
100+4.39 EUR
800+3.56 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FFSP15120A ffsp15120a-d.pdf
FFSP15120A
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 15A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 936pF @ 1V, 100kHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.39 EUR
50+5.92 EUR
100+5.63 EUR
500+5.1 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN531335DW1T3G mun531335dw1-d.pdf
NSVMUN531335DW1T3G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms, 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.07 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN531335DW1T3G mun531335dw1-d.pdf
NSVMUN531335DW1T3G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms, 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
71+0.25 EUR
113+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
2000+0.09 EUR
5000+0.078 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
NCT7491MNTXG nct7491-d.pdf
NCT7491MNTXG
Hersteller: onsemi
Description: IC REMOTE THERMAL MONITOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Output Type: 2-Wire Serial, I2C/SMBUS
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor)
Accuracy: ±3.5°C
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Internal and External
Sensing Temperature: 0°C ~ 85°C, -40°C ~ 125°C
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 24-QFN (4x4)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCT7491MNTXG nct7491-d.pdf
NCT7491MNTXG
Hersteller: onsemi
Description: IC REMOTE THERMAL MONITOR 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Output Type: 2-Wire Serial, I2C/SMBUS
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor)
Accuracy: ±3.5°C
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Internal and External
Sensing Temperature: 0°C ~ 85°C, -40°C ~ 125°C
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 24-QFN (4x4)
auf Bestellung 3895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.97 EUR
10+4.5 EUR
25+3.85 EUR
100+3.12 EUR
250+2.76 EUR
500+2.54 EUR
1000+2.36 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
AFGHL75T65SQDC afghl75t65sqdc-d.pdf
AFGHL75T65SQDC
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/107.2ns
Switching Energy: 1.68mJ (on), 1.11mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 139 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Qualification: AEC-Q101
auf Bestellung 2128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.9 EUR
30+8.82 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FGH4L75T65MQDC50 fgh4l75t65mqdc50-d.pdf
FGH4L75T65MQDC50
Hersteller: onsemi
Description: IGBT FS 650V 110A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 29ns/187ns
Switching Energy: 720µJ (on), 960µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 146 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 385 W
auf Bestellung 438 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.53 EUR
30+10.48 EUR
120+8.94 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC20MELG mc74ac20-d.pdf
MC74AC20MELG
Hersteller: onsemi
Description: IC GATE NAND 2CH 4-INP SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 4
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
auf Bestellung 9500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
807+0.62 EUR
Mindestbestellmenge: 807
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC20NG mc74ac20-d.pdf
MC74AC20NG
Hersteller: onsemi
Description: IC GATE NAND 2CH 4-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 4
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
auf Bestellung 23240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1158+0.44 EUR
Mindestbestellmenge: 1158
Im Einkaufswagen  Stück im Wert von  UAH
NTP360N80S3Z ntp360n80s3z-d.pdf
NTP360N80S3Z
Hersteller: onsemi
Description: MOSFET N-CH 800V 13A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 300µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 400 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
167+2.9 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
1N5234B 1n5221b-d.pdf
1N5234B
Hersteller: onsemi
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
auf Bestellung 141480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
170+0.1 EUR
390+0.045 EUR
500+0.042 EUR
1000+0.039 EUR
2000+0.038 EUR
5000+0.037 EUR
10000+0.03 EUR
50000+0.027 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
NXH100B120H3Q0PG nxh100b120h3q0-d.pdf
NXH100B120H3Q0PG
Hersteller: onsemi
Description: PIM 60-80KW Q0BOOST-L57 1200V, 1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 61 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+103.66 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH100B120H3Q0PTG nxh100b120h3q0-d.pdf
NXH100B120H3Q0PTG
Hersteller: onsemi
Description: IGBT MODULE 1200V 50A 186W 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
auf Bestellung 262 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+109.17 EUR
24+83.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH100B120H3Q0SG nxh100b120h3q0-d.pdf
NXH100B120H3Q0SG
Hersteller: onsemi
Description: PIM 60-80KW Q0BOOST-L57 1200V, 1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 61 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
auf Bestellung 236 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+103.66 EUR
24+78.98 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH100B120H3Q0STG nxh100b120h3q0-d.pdf
NXH100B120H3Q0STG
Hersteller: onsemi
Description: IGBT MODULE 1200V 50A 186W PIM22
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+87.35 EUR
24+83.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH40B120MNQ0SNG nxh40b120mnq0-d.pdf
Hersteller: onsemi
Description: 80KW GENII 1200V 80MOHM SIC MOSF
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
Power - Max: 118 W
Input Capacitance (Cies) @ Vce: 3.227 nF @ 20 V
auf Bestellung 2543 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+131.96 EUR
24+105.68 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTH4L015N065SC1 nth4l015n065sc1-d.pdf
NTH4L015N065SC1
Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
auf Bestellung 7224 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.28 EUR
30+28.03 EUR
120+26.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTHL015N065SC1 nthl015n065sc1-d.pdf
NTHL015N065SC1
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 643W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
auf Bestellung 1496 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+45.34 EUR
30+29.75 EUR
120+28.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTH4L014N120M3P nth4l014n120m3p-d.pdf
NTH4L014N120M3P
Hersteller: onsemi
Description: SIC MOSFET 1200 V 14 MOHM M3P SE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 74A, 18V
Power Dissipation (Max): 686W (Tc)
Vgs(th) (Max) @ Id: 4.63V @ 37mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 329 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 800 V
auf Bestellung 2070 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+45.5 EUR
10+33.33 EUR
450+28.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MPSA18RLRAG mpsa18-d.pdf
MPSA18RLRAG
Hersteller: onsemi
Description: TRANS NPN 45V 0.2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 132913 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3122+0.15 EUR
Mindestbestellmenge: 3122
Im Einkaufswagen  Stück im Wert von  UAH
MPSA18RLRMG mpsa18-d.pdf
MPSA18RLRMG
Hersteller: onsemi
Description: TRANS NPN 45V 0.2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 33565 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3122+0.15 EUR
Mindestbestellmenge: 3122
Im Einkaufswagen  Stück im Wert von  UAH
CAT1832Z-GT3 ONSM-S-A0000710844-1.pdf?t.download=true&u=5oefqw
CAT1832Z-GT3
Hersteller: onsemi
Description: CAT1832 - 3.3V SUPPLY MONITOR, W
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 2.55V, 2.88V
Supplier Device Package: 8-MSOP
DigiKey Programmable: Not Verified
auf Bestellung 11801 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
364+1.33 EUR
Mindestbestellmenge: 364
Im Einkaufswagen  Stück im Wert von  UAH
CAT1232LPZ-GT3 CAT1232LP%2CCAT1832.pdf
CAT1232LPZ-GT3
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Output: Open Drain, Push-Pull
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.37V, 4.62V
Supplier Device Package: 8-MSOP
DigiKey Programmable: Not Verified
auf Bestellung 1322 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
398+1.23 EUR
Mindestbestellmenge: 398
Im Einkaufswagen  Stück im Wert von  UAH
NXH240B120H3Q1PG nxh240b120h3q1pg-d.pdf
NXH240B120H3Q1PG
Hersteller: onsemi
Description: PIM Q1 3 CHANNEL IGBT+SIC BOOST
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: 32-PIM (71x37.4)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 158 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 18.151 nF @ 20 V
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+124.13 EUR
21+118.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH350N100H4Q2F2P1G nxh350n100h4q2f2p1g-d.pdf
NXH350N100H4Q2F2P1G
Hersteller: onsemi
Description: IC PWR MODULE 1000V 350A PIM42
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 303 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 276 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+269.9 EUR
12+244.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NXH450B100H4Q2F2PG nxh450b100h4q2f2-d.pdf
NXH450B100H4Q2F2PG
Hersteller: onsemi
Description: 1000V,75A FSIII IGBT, MID SPEED
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: 56-PIM (93x47)
Current - Collector (Ic) (Max): 101 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 234 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+193.86 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 247 494 741 988 1134 1135 1136 1137 1138 1139 1140 1141 1142 1143 1144 1235 1482 1729 1976 2223 2470 2478  [ Nächste Seite >> ]