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MICROFJ-40035-TSV-TR onsemi microj-series-d.pdf Description: SENSOR PHOTODIODE 420NM 14WBGA
Packaging: Tape & Reel (TR)
Package / Case: 14-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 110ps
Spectral Range: 200nm ~ 900nm
Active Area: 15.45mm²
Current - Dark (Typ): 3µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
auf Bestellung 60000 Stücke:
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3000+34.50 EUR
Mindestbestellmenge: 3000
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MICROFJ-40035-TSV-TR onsemi microj-series-d.pdf Description: SENSOR PHOTODIODE 420NM 14WBGA
Packaging: Cut Tape (CT)
Package / Case: 14-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 110ps
Spectral Range: 200nm ~ 900nm
Active Area: 15.45mm²
Current - Dark (Typ): 3µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
auf Bestellung 62979 Stücke:
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5+43.84 EUR
10+42.03 EUR
25+39.93 EUR
50+38.53 EUR
100+37.27 EUR
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FQPF22N30 FQPF22N30 onsemi fqpf22n30-d.pdf Description: MOSFET N-CH 300V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
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NRVTS2H60ESFT3G NRVTS2H60ESFT3G onsemi nrvts2h60esf-d.pdf Description: DIODE SCHOTTKY 60V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
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NRVTS2H60ESFT3G NRVTS2H60ESFT3G onsemi nrvts2h60esf-d.pdf Description: DIODE SCHOTTKY 60V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 4770 Stücke:
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40+0.45 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.22 EUR
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FDS4470 FDS4470 onsemi fds4470-d.pdf description Description: MOSFET N-CH 40V 12.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +30V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2659 pF @ 20 V
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FDS4470 FDS4470 onsemi fds4470-d.pdf description Description: MOSFET N-CH 40V 12.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +30V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2659 pF @ 20 V
auf Bestellung 6091 Stücke:
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10+2.54 EUR
100+2.02 EUR
500+1.71 EUR
1000+1.45 EUR
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MC74HCT573ADTRG-Q MC74HCT573ADTRG-Q onsemi mc74hc573a-d.pdf Description: IC TXRX/LATCH OCTAL 3ST 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74LCX125MTC 74LCX125MTC onsemi ONSM-S-A0006342070-1.pdf?t.download=true&u=5oefqw Description: IC BUF NON-INVERT 3.6V 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-TSSOP
auf Bestellung 1856 Stücke:
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14+1.28 EUR
23+0.77 EUR
94+0.49 EUR
188+0.43 EUR
282+0.40 EUR
564+0.36 EUR
1034+0.32 EUR
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74LCX125M 74LCX125M onsemi ONSM-S-A0006342070-1.pdf?t.download=true&u=5oefqw description Description: IC BUF NON-INVERT 3.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-SOIC
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M1MA151WAT1G M1MA151WAT1G onsemi m1ma151wat1-d.pdf Description: DIODE ARRAY GP 40V 100MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-59
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 35 V
auf Bestellung 15000 Stücke:
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3000+0.05 EUR
6000+0.05 EUR
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M1MA151WAT1G M1MA151WAT1G onsemi m1ma151wat1-d.pdf Description: DIODE ARRAY GP 40V 100MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-59
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 35 V
auf Bestellung 15000 Stücke:
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59+0.30 EUR
85+0.21 EUR
157+0.11 EUR
500+0.09 EUR
1000+0.06 EUR
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M1MA151WAT1 M1MA151WAT1 onsemi m1ma151wat1-d.pdf Description: DIODE ARRAY GP 40V 100MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-59
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Produkt ist nicht verfügbar
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M1MA151WAT1 M1MA151WAT1 onsemi m1ma151wat1-d.pdf Description: DIODE ARRAY GP 40V 100MA SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-59
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
auf Bestellung 177000 Stücke:
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11539+0.05 EUR
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SZMM5Z4699T5G SZMM5Z4699T5G onsemi mm5z4678t1-d.pdf Description: DIODE ZENER 12V 500MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
auf Bestellung 80000 Stücke:
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16000+0.06 EUR
24000+0.06 EUR
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SZMM5Z4699T5G SZMM5Z4699T5G onsemi mm5z4678t1-d.pdf Description: DIODE ZENER 12V 500MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
auf Bestellung 87948 Stücke:
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36+0.49 EUR
52+0.34 EUR
140+0.13 EUR
500+0.11 EUR
1000+0.10 EUR
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MM5Z4699T5G MM5Z4699T5G onsemi mm5z4678t1-d.pdf Description: DIODE ZENER 12V 500MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-523
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
auf Bestellung 88000 Stücke:
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16000+0.06 EUR
24000+0.06 EUR
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MM5Z4699T5G MM5Z4699T5G onsemi mm5z4678t1-d.pdf Description: DIODE ZENER 12V 500MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-523
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
auf Bestellung 92000 Stücke:
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48+0.37 EUR
70+0.25 EUR
160+0.11 EUR
500+0.10 EUR
1000+0.09 EUR
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MBR20H150CTH MBR20H150CTH onsemi Description: DIODE ARR SCHOTT 150V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -20°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
auf Bestellung 77000 Stücke:
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MBR20H150CTH MBR20H150CTH onsemi Description: DIODE ARR SCHOTT 150V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -20°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
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NCP81063MNTXG NCP81063MNTXG onsemi ncp81063-d.pdf Description: IC GATE DRV HI-SIDE/LO-SIDE 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 13.2V
Input Type: Non-Inverting
Supplier Device Package: 8-DFN (3x3)
Rise / Fall Time (Typ): 30ns, 27ns
Channel Type: Synchronous
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.7V, 3.4V
Current - Peak Output (Source, Sink): 2.5A, 1.6A
DigiKey Programmable: Not Verified
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NVD6416ANLT4G NVD6416ANLT4G onsemi ntd6416anl-d.pdf Description: MOSFET N-CH 100V 19A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NCV78702DE0R2G NCV78702DE0R2G onsemi ncv78702-d.pdf Description: L702 IN TSSOPEP-20
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 0.4V ~ 64.8V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 350kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 20-TSSOP-EP
Dimming: PWM, SPI
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 30V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV78702DE0R2G NCV78702DE0R2G onsemi ncv78702-d.pdf Description: L702 IN TSSOPEP-20
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 0.4V ~ 64.8V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 350kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 20-TSSOP-EP
Dimming: PWM, SPI
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 30V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NTHL022N120M3S NTHL022N120M3S onsemi nthl022n120m3s-d.pdf Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 352W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 800 V
auf Bestellung 187 Stücke:
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1+28.55 EUR
10+21.10 EUR
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NTHL060N090SC1 NTHL060N090SC1 onsemi nthl060n090sc1-d.pdf Description: SICFET N-CH 900V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V
auf Bestellung 863 Stücke:
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1+19.43 EUR
30+13.02 EUR
120+11.71 EUR
510+11.32 EUR
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NTHL070N120M3S NTHL070N120M3S onsemi nthl070n120m3s-d.pdf Description: SIC MOS TO247-3L 70MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
auf Bestellung 11793 Stücke:
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NTHL045N065SC1 NTHL045N065SC1 onsemi nthl045n065sc1-d.pdf Description: SIC MOS TO247-3L 650V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 291W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
auf Bestellung 1666 Stücke:
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NTHL1000N170M1 NTHL1000N170M1 onsemi NTHL1000N170M1-D.PDF Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 20V
Power Dissipation (Max): 48W
Vgs(th) (Max) @ Id: 4.3V @ 640µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 1000 V
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RGP10K RGP10K onsemi ONSM-S-A0003589244-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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RGP10K RGP10K onsemi ONSM-S-A0003589244-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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NTMFS4835NT1G NTMFS4835NT1G onsemi ntmfs4835n-d.pdf Description: MOSFET N-CH 30V 13A/130A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12 V
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SZESD7241MXWT5G SZESD7241MXWT5G onsemi ESD7241-D.PDF Description: TVS DIODE 24VWM 48VC 2X2DFNW
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom, USB
Capacitance @ Frequency: 1pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: 2-X2DFNW (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 73151 Stücke:
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26+0.69 EUR
36+0.49 EUR
100+0.32 EUR
500+0.26 EUR
1000+0.19 EUR
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GBPC1202W GBPC1202W onsemi gbpc3510-d.pdf Description: BRIDGE RECT 1P 200V 12A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 12 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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MC100EP131FAR2G MC100EP131FAR2G onsemi mc10ep131-d.pdf Description: IC FF D-TYPE SNGL 4BIT 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 120 mA
Trigger Type: Positive, Negative
Clock Frequency: 3 GHz
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 4
Produkt ist nicht verfügbar
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MC100EP131FAR2G MC100EP131FAR2G onsemi mc10ep131-d.pdf Description: IC FF D-TYPE SNGL 4BIT 32LQFP
Packaging: Cut Tape (CT)
Package / Case: 32-LQFP
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 120 mA
Trigger Type: Positive, Negative
Clock Frequency: 3 GHz
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 4
auf Bestellung 729 Stücke:
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1+39.41 EUR
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KSA812YMTF KSA812YMTF onsemi ksa812-d.pdf Description: TRANS PNP 50V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 15867 Stücke:
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11539+0.05 EUR
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NSV12200LT1G NSV12200LT1G onsemi nss12200l-d.pdf Description: TRANS PNP 12V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 540 mW
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
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3000+0.24 EUR
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NSV12200LT1G NSV12200LT1G onsemi nss12200l-d.pdf Description: TRANS PNP 12V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 540 mW
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.28 EUR
23+0.80 EUR
100+0.52 EUR
500+0.39 EUR
1000+0.35 EUR
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NCV500SN33T1G NCV500SN33T1G onsemi ncp500-d.pdf Description: IC REG LINEAR 3.3V 150MA 5-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Qualification: AEC-Q100
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.38 EUR
6000+0.35 EUR
9000+0.33 EUR
15000+0.31 EUR
Mindestbestellmenge: 3000
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NCV500SN33T1G NCV500SN33T1G onsemi ncp500-d.pdf Description: IC REG LINEAR 3.3V 150MA 5-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Qualification: AEC-Q100
auf Bestellung 38868 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
18+1.02 EUR
25+0.84 EUR
100+0.65 EUR
250+0.55 EUR
500+0.49 EUR
1000+0.44 EUR
Mindestbestellmenge: 11
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MUN2231T1G MUN2231T1G onsemi dtc123e-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.05 EUR
6000+0.04 EUR
9000+0.04 EUR
15000+0.04 EUR
21000+0.04 EUR
30000+0.04 EUR
75000+0.03 EUR
Mindestbestellmenge: 3000
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MUN2231T1G MUN2231T1G onsemi dtc123e-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
93+0.19 EUR
149+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 56
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MUN2240T1G MUN2240T1G onsemi dtc144t-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
Produkt ist nicht verfügbar
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MUN2240T1G MUN2240T1G onsemi dtc144t-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
Produkt ist nicht verfügbar
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MUN2240T1G MUN2240T1G onsemi dtc144t-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
auf Bestellung 319000 Stücke:
Lieferzeit 10-14 Tag (e)
11539+0.05 EUR
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MUN2241T1G MUN2241T1G onsemi dtc115t-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
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MUN2241T1G MUN2241T1G onsemi dtc115t-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
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MUN2241T1G MUN2241T1G onsemi dtc115t-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 100 kOhms
auf Bestellung 177000 Stücke:
Lieferzeit 10-14 Tag (e)
11539+0.05 EUR
Mindestbestellmenge: 11539
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MUN2230T1G MUN2230T1G onsemi dtc113e-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
auf Bestellung 405000 Stücke:
Lieferzeit 10-14 Tag (e)
10606+0.05 EUR
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MUN2237T1G MUN2237T1G onsemi dtc144w-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 389700 Stücke:
Lieferzeit 10-14 Tag (e)
11539+0.05 EUR
Mindestbestellmenge: 11539
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MUN2234T1G MUN2234T1G onsemi dtc124x-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
10969+0.05 EUR
Mindestbestellmenge: 10969
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MUN2231T1 MUN2231T1 onsemi MUN2211T1%20Series.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
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11539+0.05 EUR
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MUN2241T1 MUN2241T1 onsemi MUN2211T1%20Series.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 100 kOhms
auf Bestellung 80975 Stücke:
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MUN2212T1 MUN2212T1 onsemi MUN2211T1%20Series.pdf Description: TRANS BRT NPN 100MA 50V SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
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4N38 onsemi H11D1%2C2%2C3%2C4%2C%204N38pdf.pdf Description: OPTOISO 5.3KV TRANS W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
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NTMFS7D5N15MC NTMFS7D5N15MC onsemi ntmfs7d5n15mc-d.pdf Description: PTNG 150V 7.4MOHM, POWERCLIP56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 54A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 295µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3835 pF @ 75 V
Produkt ist nicht verfügbar
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NTMFS7D5N15MC NTMFS7D5N15MC onsemi ntmfs7d5n15mc-d.pdf Description: PTNG 150V 7.4MOHM, POWERCLIP56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 54A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 295µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3835 pF @ 75 V
auf Bestellung 2758 Stücke:
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10+5.38 EUR
100+3.81 EUR
500+3.15 EUR
1000+3.07 EUR
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NVMFS4C01NWFT1G NVMFS4C01NWFT1G onsemi nvmfs4c01n-d.pdf Description: MOSFET N-CH 30V 49A/319A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Qualification: AEC-Q101
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NVMFS4C01NWFT1G NVMFS4C01NWFT1G onsemi nvmfs4c01n-d.pdf Description: MOSFET N-CH 30V 49A/319A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
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3+7.16 EUR
10+6.02 EUR
100+4.87 EUR
500+4.33 EUR
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MICROFJ-40035-TSV-TR microj-series-d.pdf
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 14WBGA
Packaging: Tape & Reel (TR)
Package / Case: 14-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 110ps
Spectral Range: 200nm ~ 900nm
Active Area: 15.45mm²
Current - Dark (Typ): 3µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
auf Bestellung 60000 Stücke:
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MICROFJ-40035-TSV-TR microj-series-d.pdf
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 14WBGA
Packaging: Cut Tape (CT)
Package / Case: 14-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 110ps
Spectral Range: 200nm ~ 900nm
Active Area: 15.45mm²
Current - Dark (Typ): 3µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
auf Bestellung 62979 Stücke:
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Anzahl Preis
1+48.89 EUR
5+43.84 EUR
10+42.03 EUR
25+39.93 EUR
50+38.53 EUR
100+37.27 EUR
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FQPF22N30 fqpf22n30-d.pdf
FQPF22N30
Hersteller: onsemi
Description: MOSFET N-CH 300V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
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NRVTS2H60ESFT3G nrvts2h60esf-d.pdf
NRVTS2H60ESFT3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NRVTS2H60ESFT3G nrvts2h60esf-d.pdf
NRVTS2H60ESFT3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 4770 Stücke:
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Anzahl Preis
27+0.67 EUR
40+0.45 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.22 EUR
2000+0.21 EUR
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FDS4470 description fds4470-d.pdf
FDS4470
Hersteller: onsemi
Description: MOSFET N-CH 40V 12.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +30V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2659 pF @ 20 V
auf Bestellung 2500 Stücke:
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FDS4470 description fds4470-d.pdf
FDS4470
Hersteller: onsemi
Description: MOSFET N-CH 40V 12.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +30V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2659 pF @ 20 V
auf Bestellung 6091 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.06 EUR
10+2.54 EUR
100+2.02 EUR
500+1.71 EUR
1000+1.45 EUR
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MC74HCT573ADTRG-Q mc74hc573a-d.pdf
MC74HCT573ADTRG-Q
Hersteller: onsemi
Description: IC TXRX/LATCH OCTAL 3ST 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74LCX125MTC ONSM-S-A0006342070-1.pdf?t.download=true&u=5oefqw
74LCX125MTC
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-TSSOP
auf Bestellung 1856 Stücke:
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Anzahl Preis
14+1.28 EUR
23+0.77 EUR
94+0.49 EUR
188+0.43 EUR
282+0.40 EUR
564+0.36 EUR
1034+0.32 EUR
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74LCX125M description ONSM-S-A0006342070-1.pdf?t.download=true&u=5oefqw
74LCX125M
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-SOIC
Produkt ist nicht verfügbar
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M1MA151WAT1G m1ma151wat1-d.pdf
M1MA151WAT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 40V 100MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-59
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 35 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
6000+0.05 EUR
9000+0.04 EUR
Mindestbestellmenge: 3000
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M1MA151WAT1G m1ma151wat1-d.pdf
M1MA151WAT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 40V 100MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-59
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 35 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
85+0.21 EUR
157+0.11 EUR
500+0.09 EUR
1000+0.06 EUR
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M1MA151WAT1 m1ma151wat1-d.pdf
M1MA151WAT1
Hersteller: onsemi
Description: DIODE ARRAY GP 40V 100MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-59
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Produkt ist nicht verfügbar
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M1MA151WAT1 m1ma151wat1-d.pdf
M1MA151WAT1
Hersteller: onsemi
Description: DIODE ARRAY GP 40V 100MA SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-59
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
auf Bestellung 177000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11539+0.05 EUR
Mindestbestellmenge: 11539
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SZMM5Z4699T5G mm5z4678t1-d.pdf
SZMM5Z4699T5G
Hersteller: onsemi
Description: DIODE ZENER 12V 500MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.07 EUR
16000+0.06 EUR
24000+0.06 EUR
40000+0.06 EUR
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SZMM5Z4699T5G mm5z4678t1-d.pdf
SZMM5Z4699T5G
Hersteller: onsemi
Description: DIODE ZENER 12V 500MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
auf Bestellung 87948 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
52+0.34 EUR
140+0.13 EUR
500+0.11 EUR
1000+0.10 EUR
2000+0.08 EUR
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MM5Z4699T5G mm5z4678t1-d.pdf
MM5Z4699T5G
Hersteller: onsemi
Description: DIODE ZENER 12V 500MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-523
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
auf Bestellung 88000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.06 EUR
16000+0.06 EUR
24000+0.06 EUR
40000+0.06 EUR
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MM5Z4699T5G mm5z4678t1-d.pdf
MM5Z4699T5G
Hersteller: onsemi
Description: DIODE ZENER 12V 500MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-523
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
auf Bestellung 92000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
70+0.25 EUR
160+0.11 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 48
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MBR20H150CTH
MBR20H150CTH
Hersteller: onsemi
Description: DIODE ARR SCHOTT 150V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -20°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
auf Bestellung 77000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
268+1.76 EUR
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MBR20H150CTH
MBR20H150CTH
Hersteller: onsemi
Description: DIODE ARR SCHOTT 150V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -20°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Produkt ist nicht verfügbar
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NCP81063MNTXG ncp81063-d.pdf
NCP81063MNTXG
Hersteller: onsemi
Description: IC GATE DRV HI-SIDE/LO-SIDE 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 13.2V
Input Type: Non-Inverting
Supplier Device Package: 8-DFN (3x3)
Rise / Fall Time (Typ): 30ns, 27ns
Channel Type: Synchronous
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.7V, 3.4V
Current - Peak Output (Source, Sink): 2.5A, 1.6A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NVD6416ANLT4G ntd6416anl-d.pdf
NVD6416ANLT4G
Hersteller: onsemi
Description: MOSFET N-CH 100V 19A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NCV78702DE0R2G ncv78702-d.pdf
NCV78702DE0R2G
Hersteller: onsemi
Description: L702 IN TSSOPEP-20
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 0.4V ~ 64.8V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 350kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 20-TSSOP-EP
Dimming: PWM, SPI
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 30V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV78702DE0R2G ncv78702-d.pdf
NCV78702DE0R2G
Hersteller: onsemi
Description: L702 IN TSSOPEP-20
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 0.4V ~ 64.8V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 350kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 20-TSSOP-EP
Dimming: PWM, SPI
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 30V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NTHL022N120M3S nthl022n120m3s-d.pdf
NTHL022N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 352W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 800 V
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.55 EUR
10+21.10 EUR
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NTHL060N090SC1 nthl060n090sc1-d.pdf
NTHL060N090SC1
Hersteller: onsemi
Description: SICFET N-CH 900V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V
auf Bestellung 863 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.43 EUR
30+13.02 EUR
120+11.71 EUR
510+11.32 EUR
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NTHL070N120M3S nthl070n120m3s-d.pdf
NTHL070N120M3S
Hersteller: onsemi
Description: SIC MOS TO247-3L 70MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
auf Bestellung 11793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.22 EUR
30+8.09 EUR
120+6.82 EUR
510+6.20 EUR
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NTHL045N065SC1 nthl045n065sc1-d.pdf
NTHL045N065SC1
Hersteller: onsemi
Description: SIC MOS TO247-3L 650V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 291W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
auf Bestellung 1666 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.38 EUR
10+17.52 EUR
450+13.30 EUR
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NTHL1000N170M1 NTHL1000N170M1-D.PDF
NTHL1000N170M1
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 20V
Power Dissipation (Max): 48W
Vgs(th) (Max) @ Id: 4.3V @ 640µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 1000 V
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.55 EUR
10+5.26 EUR
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RGP10K ONSM-S-A0003589244-1.pdf?t.download=true&u=5oefqw
RGP10K
Hersteller: onsemi
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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RGP10K ONSM-S-A0003589244-1.pdf?t.download=true&u=5oefqw
RGP10K
Hersteller: onsemi
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
42+0.43 EUR
100+0.27 EUR
500+0.20 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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NTMFS4835NT1G ntmfs4835n-d.pdf
NTMFS4835NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/130A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12 V
auf Bestellung 829741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
510+0.97 EUR
Mindestbestellmenge: 510
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SZESD7241MXWT5G ESD7241-D.PDF
SZESD7241MXWT5G
Hersteller: onsemi
Description: TVS DIODE 24VWM 48VC 2X2DFNW
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom, USB
Capacitance @ Frequency: 1pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: 2-X2DFNW (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 73151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
36+0.49 EUR
100+0.32 EUR
500+0.26 EUR
1000+0.19 EUR
Mindestbestellmenge: 26
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GBPC1202W gbpc3510-d.pdf
GBPC1202W
Hersteller: onsemi
Description: BRIDGE RECT 1P 200V 12A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 12 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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MC100EP131FAR2G mc10ep131-d.pdf
MC100EP131FAR2G
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 4BIT 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 120 mA
Trigger Type: Positive, Negative
Clock Frequency: 3 GHz
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 4
Produkt ist nicht verfügbar
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MC100EP131FAR2G mc10ep131-d.pdf
MC100EP131FAR2G
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 4BIT 32LQFP
Packaging: Cut Tape (CT)
Package / Case: 32-LQFP
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 120 mA
Trigger Type: Positive, Negative
Clock Frequency: 3 GHz
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 4
auf Bestellung 729 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+39.41 EUR
10+28.26 EUR
25+25.36 EUR
100+23.67 EUR
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KSA812YMTF ksa812-d.pdf
KSA812YMTF
Hersteller: onsemi
Description: TRANS PNP 50V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 15867 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11539+0.05 EUR
Mindestbestellmenge: 11539
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NSV12200LT1G nss12200l-d.pdf
NSV12200LT1G
Hersteller: onsemi
Description: TRANS PNP 12V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 540 mW
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000
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NSV12200LT1G nss12200l-d.pdf
NSV12200LT1G
Hersteller: onsemi
Description: TRANS PNP 12V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 540 mW
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
23+0.80 EUR
100+0.52 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 14
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NCV500SN33T1G ncp500-d.pdf
NCV500SN33T1G
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 150MA 5-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Qualification: AEC-Q100
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.38 EUR
6000+0.35 EUR
9000+0.33 EUR
15000+0.31 EUR
Mindestbestellmenge: 3000
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NCV500SN33T1G ncp500-d.pdf
NCV500SN33T1G
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 150MA 5-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Qualification: AEC-Q100
auf Bestellung 38868 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
18+1.02 EUR
25+0.84 EUR
100+0.65 EUR
250+0.55 EUR
500+0.49 EUR
1000+0.44 EUR
Mindestbestellmenge: 11
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MUN2231T1G dtc123e-d.pdf
MUN2231T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
6000+0.04 EUR
9000+0.04 EUR
15000+0.04 EUR
21000+0.04 EUR
30000+0.04 EUR
75000+0.03 EUR
Mindestbestellmenge: 3000
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MUN2231T1G dtc123e-d.pdf
MUN2231T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
93+0.19 EUR
149+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 56
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MUN2240T1G dtc144t-d.pdf
MUN2240T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUN2240T1G dtc144t-d.pdf
MUN2240T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUN2240T1G dtc144t-d.pdf
MUN2240T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
auf Bestellung 319000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11539+0.05 EUR
Mindestbestellmenge: 11539
Im Einkaufswagen  Stück im Wert von  UAH
MUN2241T1G dtc115t-d.pdf
MUN2241T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUN2241T1G dtc115t-d.pdf
MUN2241T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUN2241T1G dtc115t-d.pdf
MUN2241T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 100 kOhms
auf Bestellung 177000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11539+0.05 EUR
Mindestbestellmenge: 11539
Im Einkaufswagen  Stück im Wert von  UAH
MUN2230T1G dtc113e-d.pdf
MUN2230T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
auf Bestellung 405000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10606+0.05 EUR
Mindestbestellmenge: 10606
Im Einkaufswagen  Stück im Wert von  UAH
MUN2237T1G dtc144w-d.pdf
MUN2237T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 389700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11539+0.05 EUR
Mindestbestellmenge: 11539
Im Einkaufswagen  Stück im Wert von  UAH
MUN2234T1G dtc124x-d.pdf
MUN2234T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10969+0.05 EUR
Mindestbestellmenge: 10969
Im Einkaufswagen  Stück im Wert von  UAH
MUN2231T1 MUN2211T1%20Series.pdf
MUN2231T1
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11539+0.05 EUR
Mindestbestellmenge: 11539
Im Einkaufswagen  Stück im Wert von  UAH
MUN2241T1 MUN2211T1%20Series.pdf
MUN2241T1
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 100 kOhms
auf Bestellung 80975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11539+0.05 EUR
Mindestbestellmenge: 11539
Im Einkaufswagen  Stück im Wert von  UAH
MUN2212T1 MUN2211T1%20Series.pdf
MUN2212T1
Hersteller: onsemi
Description: TRANS BRT NPN 100MA 50V SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
4N38 H11D1%2C2%2C3%2C4%2C%204N38pdf.pdf
Hersteller: onsemi
Description: OPTOISO 5.3KV TRANS W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS7D5N15MC ntmfs7d5n15mc-d.pdf
NTMFS7D5N15MC
Hersteller: onsemi
Description: PTNG 150V 7.4MOHM, POWERCLIP56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 54A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 295µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3835 pF @ 75 V
Produkt ist nicht verfügbar
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NTMFS7D5N15MC ntmfs7d5n15mc-d.pdf
NTMFS7D5N15MC
Hersteller: onsemi
Description: PTNG 150V 7.4MOHM, POWERCLIP56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 54A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 295µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3835 pF @ 75 V
auf Bestellung 2758 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.97 EUR
10+5.38 EUR
100+3.81 EUR
500+3.15 EUR
1000+3.07 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS4C01NWFT1G nvmfs4c01n-d.pdf
NVMFS4C01NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 49A/319A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+3.71 EUR
Mindestbestellmenge: 1500
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NVMFS4C01NWFT1G nvmfs4c01n-d.pdf
NVMFS4C01NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 49A/319A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.16 EUR
10+6.02 EUR
100+4.87 EUR
500+4.33 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
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