| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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NVTFWS005N08XLTAG | onsemi |
 Description: T10S 80V LL NCH MOSFET U8FL HE WPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 85µA Supplier Device Package: 8-WDFNW (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTMFS3D5N08XT1G | onsemi |
Description: T10 80V STD NCH MOSFET SO8FL Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3.6V @ 153µA Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 31A, 10V Current - Continuous Drain (Id) @ 25°C: 135A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS3D5N08XT1G | onsemi |
Description: T10 80V STD NCH MOSFET SO8FL Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3.6V @ 153µA Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 31A, 10V Current - Continuous Drain (Id) @ 25°C: 135A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 7634 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1343PD100WGEVB | onsemi |
Description: EVAL BOARD FOR NCP1343 Packaging: Box Function: USB Type-C Power Delivery (PD) Type: Power Management Contents: Board(s) Utilized IC / Part: NCP1343 Embedded: No |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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SZ1SMB22AT3G | onsemi |
Description: TRANS VOLTAGE SUPPRESSOR DIODE Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 35.5V Voltage - Breakdown (Min): 24.4V Unidirectional Channels: 1 Supplier Device Package: DO-214AA (SMB) Voltage - Reverse Standoff (Typ): 22V Current - Peak Pulse (10/1000µs): 16.9A Capacitance @ Frequency: 730pF @ 1MHz Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Bulk |
auf Bestellung 144333 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCP53MTWG | onsemi |
Description: TRANS PNP 80V 1A 3WDFNW Packaging: Tape & Reel (TR) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NSVBCP53MTWG | onsemi |
Description: TRANS PNP 80V 1A 3WDFNW Packaging: Cut Tape (CT) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NCP2815BFCCT2G | onsemi |
Description: IC AMP AB STEREO 62MW 12FLIPCHIP Supplier Device Package: 12-FlipChip Max Output Power x Channels @ Load: 62mW x 2 @ 16Ohm Voltage - Supply: 1.6V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Type: Class AB Mounting Type: Surface Mount Output Type: 2-Channel (Stereo) Package / Case: 12-UFBGA, FCBGA Features: Depop, Shutdown, Thermal Protection Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NCP4896FCT1G | onsemi |
Description: IC AMP AB MONO 1.08W 9FLIPCHIP Supplier Device Package: 9-FlipChip (1.45x1.45) Max Output Power x Channels @ Load: 1.08W x 1 @ 8Ohm; 176mW x 1 @ 16Ohm Voltage - Supply: 2.2V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Type: Class AB Mounting Type: Surface Mount Output Type: 1-Channel (Mono) with Mono Headphones Package / Case: 9-WFBGA, FCBGA Features: Depop, Shutdown, Thermal Protection Packaging: Bulk |
auf Bestellung 1104000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NCP2704FCCT1G | onsemi |
Description: IC AMP D MONO 1.7W 20FLIPCHIP Supplier Device Package: 20-FlipChip (2.5x2) Max Output Power x Channels @ Load: 1.7W x 2 @ 4Ohm; 62mW x 2 @ 16Ohm Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Type: Class D Mounting Type: Surface Mount Output Type: 1-Channel (Mono) with Stereo Headphones Package / Case: 20-WFBGA, FCBGA Features: Depop, Differential Inputs, I2C, Shutdown, Thermal Protection, Volume Control Packaging: Bulk |
auf Bestellung 103016 Stücke: Lieferzeit 10-14 Tag (e) |
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FHP3230IM8X | onsemi |
Description: IC VOLTAGE FEEDBACK 2 CIRC 8SOIC Voltage - Supply Span (Max): 12 V Voltage - Supply Span (Min): 2.7 V -3db Bandwidth: 170 MHz Current - Output / Channel: 100 mA Number of Circuits: 2 Supplier Device Package: 8-SOIC Voltage - Input Offset: 1 mV Current - Input Bias: 1.8 µA Gain Bandwidth Product: 60 MHz Slew Rate: 110V/µs Current - Supply: 2.5mA (x2 Channels) Operating Temperature: -40°C ~ 85°C Amplifier Type: Voltage Feedback Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FHP3230IMU8X | onsemi |
Description: IC VOLTAGE FEEDBACK 2 CIRC 8MSOP Current - Output / Channel: 100 mA Number of Circuits: 2 Supplier Device Package: 8-MSOP Voltage - Input Offset: 1 mV Current - Input Bias: 1.8 µA Gain Bandwidth Product: 60 MHz Slew Rate: 110V/µs Current - Supply: 2.5mA (x2 Channels) Operating Temperature: -40°C ~ 85°C Amplifier Type: Voltage Feedback Voltage - Supply Span (Max): 12 V Voltage - Supply Span (Min): 2.7 V -3db Bandwidth: 170 MHz Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTMYS029N08LHTWG | onsemi |
Description: T8 80V LL LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTMYS029N08LHTWG | onsemi |
Description: T8 80V LL LFPAK Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| STK621-043A-E | onsemi |
Description: IC HALF BRIDGE DRIVER 20A 23SIP Features: Auto Restart, Bootstrap Circuit, Status Flag Packaging: Tube Package / Case: 23-SIP, 19 Leads, Formed Leads Mounting Type: Through Hole Interface: Logic Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 12.5V ~ 17.5V Applications: AC Motors Current - Output / Channel: 20A Current - Peak Output: 40A Technology: IGBT Voltage - Load: 400V (Max) Supplier Device Package: 23-SIP Fault Protection: Current Limiting, UVLO Load Type: Inductive |
auf Bestellung 1624 Stücke: Lieferzeit 10-14 Tag (e) |
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| STK621-043A-E | onsemi |
Description: IC HALF BRIDGE DRIVER 20A 23SIP Features: Auto Restart, Bootstrap Circuit, Status Flag Packaging: Tube Package / Case: 23-SIP, 19 Leads, Formed Leads Mounting Type: Through Hole Interface: Logic Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 12.5V ~ 17.5V Applications: AC Motors Current - Output / Channel: 20A Current - Peak Output: 40A Technology: IGBT Voltage - Load: 400V (Max) Supplier Device Package: 23-SIP Fault Protection: Current Limiting, UVLO Load Type: Inductive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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CAT1025WI-30-GT3 | onsemi |
Description: IC SUPERVISR CPU 2K EEPROM 8SOIC DigiKey Programmable: Not Verified Supplier Device Package: 8-SOIC Voltage - Threshold: 3V Reset Timeout: 130ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 85°C Reset: Active High/Active Low Type: Simple Reset/Power-On Reset Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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UC2844D | onsemi |
 Description: CURRENT MODE PWM CONTROLLERPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 14-SOIC |
auf Bestellung 22157 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5404G | onsemi |
Description: DIODE STANDARD 400V 3A AXIAL Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 55543 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS002N04CLTAG-SR01 | onsemi |
Description: T6 40V SG NCH U8FL Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 90µA Power Dissipation (Max): 3.2W (Ta), 85W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS002N04CLTAG-SR01 | onsemi |
Description: T6 40V SG NCH U8FL Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 90µA Power Dissipation (Max): 3.2W (Ta), 85W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMYS012N10MCLTWG | onsemi |
Description: PTNG 100V LL LFPAK4 Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V Power Dissipation (Max): 3.6W (Ta), 72W (Tc) Vgs(th) (Max) @ Id: 3V @ 77µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 7902 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMYS013N08LHTWG | onsemi |
Description: T8 80V LL LFPAK Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 1088 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS014P04M8LTWG | onsemi |
Description: MV8 40V LL SINGLE PCH L Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 3V @ 420µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMYS013N08LHTWG | onsemi |
Description: T8 80V LL LFPAK Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 45µA Power Dissipation (Max): 3.6W (Ta), 54W (Tc) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMYS013N08LHTWG | onsemi |
Description: T8 80V LL LFPAK Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 45µA Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS014N08HLTWG | onsemi |
Description: T8 80V N-CH LL IN LFPAK33 PACKAG Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2.2V @ 45µA Power Dissipation (Max): 3W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NVTYS014N08HLTWG | onsemi |
Description: T8 80V N-CH LL IN LFPAK33 PACKAG Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2.2V @ 45µA Power Dissipation (Max): 3W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NRVS1GFL | onsemi |
Description: DIODE STANDARD 400V 1A SOD123F Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: AEC-Q101 |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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NRVS1GFL | onsemi |
Description: DIODE STANDARD 400V 1A SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: AEC-Q101 |
auf Bestellung 24353 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD6H846NLWFT1G | onsemi |
Description: MOSFET 2N-CH 80V 9.4A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 34W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2V @ 21µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD6H846NLWFT1G | onsemi |
Description: MOSFET 2N-CH 80V 9.4A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 34W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2V @ 21µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5365 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD5C446NLWFT1G | onsemi |
Description: MOSFET 2N-CH 40V 25A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 90µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NVMFD5C446NLWFT1G | onsemi |
Description: MOSFET 2N-CH 40V 25A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 90µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 785 Stücke: Lieferzeit 10-14 Tag (e) |
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NVXK2TR40WXT | onsemi |
Description: MOSFET 4N-CH 1200V 27A APM32 Packaging: Tube Package / Case: 32-PowerDIP Module (1.311", 33.30mm) Mounting Type: Through Hole Configuration: 4 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 319W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: APM32 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 114 Stücke: Lieferzeit 10-14 Tag (e) |
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FMS3818KRC | onsemi |
Description: IC DAC 8BIT A-OUT 48LQFP DigiKey Programmable: Not Verified Differential Output: No INL/DNL (LSB): ±0.5 (Max), ±0.5 (Max) Number of D/A Converters: 3 Architecture: Current Steering Supplier Device Package: 48-LQFP (7x7) Settling Time: 2.5µs Voltage - Supply, Digital: 3V ~ 3.6V Voltage - Supply, Analog: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C Reference Type: External, Internal Data Interface: Parallel Number of Bits: 8 Mounting Type: Surface Mount Output Type: Current - Unbuffered Package / Case: 48-LQFP Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSPU3071N2T5G | onsemi |
Description: UNI-DIRECTIONAL SURGE PRO Packaging: Tape & Reel (TR) |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSPU3071N2T5G | onsemi |
Description: UNI-DIRECTIONAL SURGE PRO Packaging: Cut Tape (CT) |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84C22 | onsemi |
Description: DIODE ZENER 22V 350MW SOT23 Voltage - Zener (Nom) (Vz): 22 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±6% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 350 mW Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 55 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NTSV3080CTG | onsemi |
Description: DIODE ARR SCHOTT 80V 30A TO220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Current - Reverse Leakage @ Vr: 700 µA @ 80 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC74VHC573DWR2G | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-SOIC Supplier Device Package: 20-SOIC Delay Time - Propagation: 5ns Current - Output High, Low: 8mA, 8mA Independent Circuits: 1 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: D-Type Transparent Latch Circuit: 8:8 Mounting Type: Surface Mount Output Type: Tri-State Package / Case: 20-SOIC (0.295", 7.50mm Width) Packaging: Bulk |
auf Bestellung 12270 Stücke: Lieferzeit 10-14 Tag (e) |
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AP0200AT2L00XEGA0-DR | onsemi |
Description: IC VID IMAGE SGNL PROC 100VFBGA Supplier Device Package: 100-VFBGA (7x7) Applications: Professional Video Function: Processor Mounting Type: Surface Mount Package / Case: 100-VFBGA Packaging: Tray |
auf Bestellung 894 Stücke: Lieferzeit 10-14 Tag (e) |
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AP0202AT2L00XPGA0-DR | onsemi |
Description: IC VID IMAGE SGNL PROC 100VFBGA Supplier Device Package: 100-VFBGA (7x7) Applications: Professional Video Function: Processor Mounting Type: Surface Mount Package / Case: 100-VFBGA Packaging: Tray |
auf Bestellung 2201 Stücke: Lieferzeit 10-14 Tag (e) |
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NJVMJD210T4G | onsemi |
Description: TRANS PNP 25V 5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V Frequency - Transition: 65MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 1.4 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NJVMJD210T4G | onsemi |
Description: TRANS PNP 25V 5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V Frequency - Transition: 65MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 1.4 W |
auf Bestellung 2065 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD210TF | onsemi |
Description: TRANS PNP 25V 5A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V Frequency - Transition: 65MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 1.4 W |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD210TF | onsemi |
Description: TRANS PNP 25V 5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V Frequency - Transition: 65MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 1.4 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MJD210TF | onsemi |
Description: TRANS PNP 25V 5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V Frequency - Transition: 65MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 1.4 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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KSH210TM | onsemi |
Description: TRANS PNP 25V 5A DPAK Power - Max: 1.4 W Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: DPAK Frequency - Transition: 65MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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KSH210TM | onsemi |
Description: TRANS PNP 25V 5A DPAK Packaging: Cut Tape (CT) Power - Max: 1.4 W Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: DPAK Frequency - Transition: 65MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCP7808TG | onsemi |
Description: IC REG LINEAR 8V 1A TO220-3 Protection Features: Over Temperature, Short Circuit Voltage Dropout (Max): 2V @ 1A (Typ) PSRR: 72dB (120Hz) Voltage - Output (Min/Fixed): 8V Supplier Device Package: TO-220 Number of Regulators: 1 Voltage - Input (Max): 35V Current - Quiescent (Iq): 8 mA Output Configuration: Positive Operating Temperature: 0°C ~ 125°C (TJ) Current - Output: 1A Mounting Type: Through Hole Output Type: Fixed Package / Case: TO-220-3 Packaging: Bulk |
auf Bestellung 14036 Stücke: Lieferzeit 10-14 Tag (e) |
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NOIP1SN0480A-STI | onsemi |
Description: IC CMOS IMAGE SENSOR 1/3.6" BW_ Packaging: Tray Type: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V, 3.3V Pixel Size: 4.8µm x 4.8µm Active Pixel Array: 808H x 608V Frames per Second: 120.0 |
auf Bestellung 349 Stücke: Lieferzeit 10-14 Tag (e) |
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FDSS2407 | onsemi |
Description: MOSFET 2N-CH 62V 3.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.27W Drain to Source Voltage (Vdss): 62V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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DM74S374N | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20DIP Packaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Output Type: Non-Inverted Mounting Type: Through Hole Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.75V ~ 5.25V Current - Quiescent (Iq): 110 mA Current - Output High, Low: 6.5mA, 20mA Trigger Type: Positive Edge Clock Frequency: 75 MHz Supplier Device Package: 20-PDIP Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 18 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCP136AFCRC080T2G | onsemi |
Description: IC REG LINEAR 0.8V 700MA 6-WLCSP Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.06V @ 700mA PSRR: 75dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 0.8V Supplier Device Package: 6-WLCSP (1.4x0.8) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 110 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 700mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-XFBGA, WLCSP Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCP136AFCRC080T2G | onsemi |
Description: IC REG LINEAR 0.8V 700MA 6-WLCSP Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.06V @ 700mA PSRR: 75dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 0.8V Supplier Device Package: 6-WLCSP (1.4x0.8) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 110 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 700mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-XFBGA, WLCSP Packaging: Cut Tape (CT) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSR15405NXT5G | onsemi |
Description: DIODE SCHOTTKY 40V 1.5A 2DSN Current - Reverse Leakage @ Vr: 75 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 1.5 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: 2-DSN (1.4x0.6) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 85pF @ 2V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 33 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-XDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSR15405NXT5G | onsemi |
Description: DIODE SCHOTTKY 40V 1.5A 2DSN Current - Reverse Leakage @ Vr: 75 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 1.5 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: 2-DSN (1.4x0.6) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 85pF @ 2V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 33 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-XDFN Packaging: Bulk |
auf Bestellung 26830 Stücke: Lieferzeit 10-14 Tag (e) |
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NB3N3010BDR2G | onsemi |
Description: IC CLOCK GENERATOR PLL 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 12.288MHz Input: Clock Operating Temperature: 0°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Main Purpose: USB Applications Ratio - Input:Output: 1:2 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: No Number of Circuits: 1 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NB3N3010BDR2G | onsemi |
Description: IC CLOCK GENERATOR PLL 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 12.288MHz Input: Clock Operating Temperature: 0°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Main Purpose: USB Applications Ratio - Input:Output: 1:2 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: No Number of Circuits: 1 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVTFWS005N08XLTAG |
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Hersteller: onsemi
Description: T10S 80V LL NCH MOSFET U8FL HE W
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 85µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Qualification: AEC-Q101
Description: T10S 80V LL NCH MOSFET U8FL HE W
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 85µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS3D5N08XT1G |
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Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.6V @ 153µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: T10 80V STD NCH MOSFET SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.6V @ 153µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.2 EUR |
| 3000+ | 1.12 EUR |
| 4500+ | 1.07 EUR |
| NTMFS3D5N08XT1G |
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Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.6V @ 153µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: T10 80V STD NCH MOSFET SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.6V @ 153µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 7634 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.94 EUR |
| 10+ | 2.52 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.37 EUR |
| NCP1343PD100WGEVB |
|
Hersteller: onsemi
Description: EVAL BOARD FOR NCP1343
Packaging: Box
Function: USB Type-C Power Delivery (PD)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP1343
Embedded: No
Description: EVAL BOARD FOR NCP1343
Packaging: Box
Function: USB Type-C Power Delivery (PD)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP1343
Embedded: No
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 229.65 EUR |
| SZ1SMB22AT3G |
|
Hersteller: onsemi
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 35.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 16.9A
Capacitance @ Frequency: 730pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 35.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 16.9A
Capacitance @ Frequency: 730pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
auf Bestellung 144333 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1567+ | 0.37 EUR |
| NSVBCP53MTWG |
|
Hersteller: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSVBCP53MTWG |
|
Hersteller: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP2815BFCCT2G |
|
Hersteller: onsemi
Description: IC AMP AB STEREO 62MW 12FLIPCHIP
Supplier Device Package: 12-FlipChip
Max Output Power x Channels @ Load: 62mW x 2 @ 16Ohm
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Class AB
Mounting Type: Surface Mount
Output Type: 2-Channel (Stereo)
Package / Case: 12-UFBGA, FCBGA
Features: Depop, Shutdown, Thermal Protection
Packaging: Tape & Reel (TR)
Description: IC AMP AB STEREO 62MW 12FLIPCHIP
Supplier Device Package: 12-FlipChip
Max Output Power x Channels @ Load: 62mW x 2 @ 16Ohm
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Class AB
Mounting Type: Surface Mount
Output Type: 2-Channel (Stereo)
Package / Case: 12-UFBGA, FCBGA
Features: Depop, Shutdown, Thermal Protection
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP4896FCT1G |
|
Hersteller: onsemi
Description: IC AMP AB MONO 1.08W 9FLIPCHIP
Supplier Device Package: 9-FlipChip (1.45x1.45)
Max Output Power x Channels @ Load: 1.08W x 1 @ 8Ohm; 176mW x 1 @ 16Ohm
Voltage - Supply: 2.2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Class AB
Mounting Type: Surface Mount
Output Type: 1-Channel (Mono) with Mono Headphones
Package / Case: 9-WFBGA, FCBGA
Features: Depop, Shutdown, Thermal Protection
Packaging: Bulk
Description: IC AMP AB MONO 1.08W 9FLIPCHIP
Supplier Device Package: 9-FlipChip (1.45x1.45)
Max Output Power x Channels @ Load: 1.08W x 1 @ 8Ohm; 176mW x 1 @ 16Ohm
Voltage - Supply: 2.2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Class AB
Mounting Type: Surface Mount
Output Type: 1-Channel (Mono) with Mono Headphones
Package / Case: 9-WFBGA, FCBGA
Features: Depop, Shutdown, Thermal Protection
Packaging: Bulk
auf Bestellung 1104000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 365+ | 1.58 EUR |
| NCP2704FCCT1G |
|
Hersteller: onsemi
Description: IC AMP D MONO 1.7W 20FLIPCHIP
Supplier Device Package: 20-FlipChip (2.5x2)
Max Output Power x Channels @ Load: 1.7W x 2 @ 4Ohm; 62mW x 2 @ 16Ohm
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 1-Channel (Mono) with Stereo Headphones
Package / Case: 20-WFBGA, FCBGA
Features: Depop, Differential Inputs, I2C, Shutdown, Thermal Protection, Volume Control
Packaging: Bulk
Description: IC AMP D MONO 1.7W 20FLIPCHIP
Supplier Device Package: 20-FlipChip (2.5x2)
Max Output Power x Channels @ Load: 1.7W x 2 @ 4Ohm; 62mW x 2 @ 16Ohm
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 1-Channel (Mono) with Stereo Headphones
Package / Case: 20-WFBGA, FCBGA
Features: Depop, Differential Inputs, I2C, Shutdown, Thermal Protection, Volume Control
Packaging: Bulk
auf Bestellung 103016 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 224+ | 2.4 EUR |
| FHP3230IM8X |
|
Hersteller: onsemi
Description: IC VOLTAGE FEEDBACK 2 CIRC 8SOIC
Voltage - Supply Span (Max): 12 V
Voltage - Supply Span (Min): 2.7 V
-3db Bandwidth: 170 MHz
Current - Output / Channel: 100 mA
Number of Circuits: 2
Supplier Device Package: 8-SOIC
Voltage - Input Offset: 1 mV
Current - Input Bias: 1.8 µA
Gain Bandwidth Product: 60 MHz
Slew Rate: 110V/µs
Current - Supply: 2.5mA (x2 Channels)
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Voltage Feedback
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC VOLTAGE FEEDBACK 2 CIRC 8SOIC
Voltage - Supply Span (Max): 12 V
Voltage - Supply Span (Min): 2.7 V
-3db Bandwidth: 170 MHz
Current - Output / Channel: 100 mA
Number of Circuits: 2
Supplier Device Package: 8-SOIC
Voltage - Input Offset: 1 mV
Current - Input Bias: 1.8 µA
Gain Bandwidth Product: 60 MHz
Slew Rate: 110V/µs
Current - Supply: 2.5mA (x2 Channels)
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Voltage Feedback
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| FHP3230IMU8X |
|
Hersteller: onsemi
Description: IC VOLTAGE FEEDBACK 2 CIRC 8MSOP
Current - Output / Channel: 100 mA
Number of Circuits: 2
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 1.8 µA
Gain Bandwidth Product: 60 MHz
Slew Rate: 110V/µs
Current - Supply: 2.5mA (x2 Channels)
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Voltage Feedback
Voltage - Supply Span (Max): 12 V
Voltage - Supply Span (Min): 2.7 V
-3db Bandwidth: 170 MHz
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: IC VOLTAGE FEEDBACK 2 CIRC 8MSOP
Current - Output / Channel: 100 mA
Number of Circuits: 2
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 1.8 µA
Gain Bandwidth Product: 60 MHz
Slew Rate: 110V/µs
Current - Supply: 2.5mA (x2 Channels)
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Voltage Feedback
Voltage - Supply Span (Max): 12 V
Voltage - Supply Span (Min): 2.7 V
-3db Bandwidth: 170 MHz
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMYS029N08LHTWG |
|
Hersteller: onsemi
Description: T8 80V LL LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Description: T8 80V LL LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| NTMYS029N08LHTWG |
|
Hersteller: onsemi
Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STK621-043A-E |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 20A 23SIP
Features: Auto Restart, Bootstrap Circuit, Status Flag
Packaging: Tube
Package / Case: 23-SIP, 19 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 20A
Current - Peak Output: 40A
Technology: IGBT
Voltage - Load: 400V (Max)
Supplier Device Package: 23-SIP
Fault Protection: Current Limiting, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 20A 23SIP
Features: Auto Restart, Bootstrap Circuit, Status Flag
Packaging: Tube
Package / Case: 23-SIP, 19 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 20A
Current - Peak Output: 40A
Technology: IGBT
Voltage - Load: 400V (Max)
Supplier Device Package: 23-SIP
Fault Protection: Current Limiting, UVLO
Load Type: Inductive
auf Bestellung 1624 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 39.67 EUR |
| STK621-043A-E |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 20A 23SIP
Features: Auto Restart, Bootstrap Circuit, Status Flag
Packaging: Tube
Package / Case: 23-SIP, 19 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 20A
Current - Peak Output: 40A
Technology: IGBT
Voltage - Load: 400V (Max)
Supplier Device Package: 23-SIP
Fault Protection: Current Limiting, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 20A 23SIP
Features: Auto Restart, Bootstrap Circuit, Status Flag
Packaging: Tube
Package / Case: 23-SIP, 19 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 20A
Current - Peak Output: 40A
Technology: IGBT
Voltage - Load: 400V (Max)
Supplier Device Package: 23-SIP
Fault Protection: Current Limiting, UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT1025WI-30-GT3 |
|
Hersteller: onsemi
Description: IC SUPERVISR CPU 2K EEPROM 8SOIC
DigiKey Programmable: Not Verified
Supplier Device Package: 8-SOIC
Voltage - Threshold: 3V
Reset Timeout: 130ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C
Reset: Active High/Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC SUPERVISR CPU 2K EEPROM 8SOIC
DigiKey Programmable: Not Verified
Supplier Device Package: 8-SOIC
Voltage - Threshold: 3V
Reset Timeout: 130ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C
Reset: Active High/Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UC2844D |
|
Hersteller: onsemi
Description: CURRENT MODE PWM CONTROLLER
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 14-SOIC
Description: CURRENT MODE PWM CONTROLLER
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 14-SOIC
auf Bestellung 22157 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 242+ | 2.23 EUR |
| 1N5404G |
|
Hersteller: onsemi
Description: DIODE STANDARD 400V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 55543 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.99 EUR |
| 35+ | 0.62 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.26 EUR |
| 2000+ | 0.24 EUR |
| 5000+ | 0.21 EUR |
| 10000+ | 0.19 EUR |
| 50000+ | 0.15 EUR |
| NTTFS002N04CLTAG-SR01 |
|
Hersteller: onsemi
Description: T6 40V SG NCH U8FL
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 3.2W (Ta), 85W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: T6 40V SG NCH U8FL
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 3.2W (Ta), 85W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.11 EUR |
| 3000+ | 1.04 EUR |
| NTTFS002N04CLTAG-SR01 |
|
Hersteller: onsemi
Description: T6 40V SG NCH U8FL
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 3.2W (Ta), 85W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: T6 40V SG NCH U8FL
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 3.2W (Ta), 85W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.8 EUR |
| NVMYS012N10MCLTWG |
|
Hersteller: onsemi
Description: PTNG 100V LL LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3.6W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 3V @ 77µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3.6W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 3V @ 77µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 7902 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.32 EUR |
| 13+ | 1.69 EUR |
| 25+ | 1.54 EUR |
| 100+ | 1.36 EUR |
| 250+ | 1.27 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.2 EUR |
| NVMYS013N08LHTWG |
|
Hersteller: onsemi
Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1088 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.53 EUR |
| 13+ | 1.7 EUR |
| 100+ | 1.19 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.88 EUR |
| NVTYS014P04M8LTWG |
|
Hersteller: onsemi
Description: MV8 40V LL SINGLE PCH L
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 3V @ 420µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 25 V
Qualification: AEC-Q101
Description: MV8 40V LL SINGLE PCH L
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 3V @ 420µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.58 EUR |
| 10+ | 2.44 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.31 EUR |
| NTMYS013N08LHTWG |
|
Hersteller: onsemi
Description: T8 80V LL LFPAK
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 45µA
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Description: T8 80V LL LFPAK
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 45µA
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.58 EUR |
| NTMYS013N08LHTWG |
|
Hersteller: onsemi
Description: T8 80V LL LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 45µA
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
Description: T8 80V LL LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 45µA
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.38 EUR |
| NVTYS014N08HLTWG |
|
Hersteller: onsemi
Description: T8 80V N-CH LL IN LFPAK33 PACKAG
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Power Dissipation (Max): 3W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: T8 80V N-CH LL IN LFPAK33 PACKAG
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Power Dissipation (Max): 3W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVTYS014N08HLTWG |
|
Hersteller: onsemi
Description: T8 80V N-CH LL IN LFPAK33 PACKAG
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Power Dissipation (Max): 3W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Description: T8 80V N-CH LL IN LFPAK33 PACKAG
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Power Dissipation (Max): 3W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVS1GFL |
|
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE STANDARD 400V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
| 15000+ | 0.11 EUR |
| 21000+ | 0.11 EUR |
| NRVS1GFL |
|
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE STANDARD 400V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 24353 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 0.55 EUR |
| 57+ | 0.37 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| NVMFD6H846NLWFT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 80V 9.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 34W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 80V 9.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 34W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.17 EUR |
| 3000+ | 1.08 EUR |
| 4500+ | 1.04 EUR |
| NVMFD6H846NLWFT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 80V 9.4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 34W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 80V 9.4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 34W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5365 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.86 EUR |
| 10+ | 2.46 EUR |
| 100+ | 1.67 EUR |
| 500+ | 1.33 EUR |
| NVMFD5C446NLWFT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 25A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 25A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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Stück im Wert von UAH
| NVMFD5C446NLWFT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 785 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.19 EUR |
| 10+ | 7.47 EUR |
| 100+ | 5.38 EUR |
| 500+ | 4.49 EUR |
| NVXK2TR40WXT |
|
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 27A APM32
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.311", 33.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 319W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V
Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: APM32
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 4N-CH 1200V 27A APM32
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.311", 33.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 319W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V
Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: APM32
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 117.42 EUR |
| 10+ | 90.26 EUR |
| 100+ | 89.21 EUR |
| FMS3818KRC |
|
Hersteller: onsemi
Description: IC DAC 8BIT A-OUT 48LQFP
DigiKey Programmable: Not Verified
Differential Output: No
INL/DNL (LSB): ±0.5 (Max), ±0.5 (Max)
Number of D/A Converters: 3
Architecture: Current Steering
Supplier Device Package: 48-LQFP (7x7)
Settling Time: 2.5µs
Voltage - Supply, Digital: 3V ~ 3.6V
Voltage - Supply, Analog: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Reference Type: External, Internal
Data Interface: Parallel
Number of Bits: 8
Mounting Type: Surface Mount
Output Type: Current - Unbuffered
Package / Case: 48-LQFP
Packaging: Tray
Description: IC DAC 8BIT A-OUT 48LQFP
DigiKey Programmable: Not Verified
Differential Output: No
INL/DNL (LSB): ±0.5 (Max), ±0.5 (Max)
Number of D/A Converters: 3
Architecture: Current Steering
Supplier Device Package: 48-LQFP (7x7)
Settling Time: 2.5µs
Voltage - Supply, Digital: 3V ~ 3.6V
Voltage - Supply, Analog: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Reference Type: External, Internal
Data Interface: Parallel
Number of Bits: 8
Mounting Type: Surface Mount
Output Type: Current - Unbuffered
Package / Case: 48-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSPU3071N2T5G |
|
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.13 EUR |
| NSPU3071N2T5G |
|
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 0.71 EUR |
| 49+ | 0.44 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.15 EUR |
| BZX84C22 |
|
Hersteller: onsemi
Description: DIODE ZENER 22V 350MW SOT23
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 55 Ohms
Description: DIODE ZENER 22V 350MW SOT23
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 55 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTSV3080CTG |
|
Hersteller: onsemi
Description: DIODE ARR SCHOTT 80V 30A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 700 µA @ 80 V
Description: DIODE ARR SCHOTT 80V 30A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 700 µA @ 80 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC573DWR2G |
|
Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Supplier Device Package: 20-SOIC
Delay Time - Propagation: 5ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Transparent Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Supplier Device Package: 20-SOIC
Delay Time - Propagation: 5ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Transparent Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
auf Bestellung 12270 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 403+ | 1.33 EUR |
| AP0200AT2L00XEGA0-DR |
|
Hersteller: onsemi
Description: IC VID IMAGE SGNL PROC 100VFBGA
Supplier Device Package: 100-VFBGA (7x7)
Applications: Professional Video
Function: Processor
Mounting Type: Surface Mount
Package / Case: 100-VFBGA
Packaging: Tray
Description: IC VID IMAGE SGNL PROC 100VFBGA
Supplier Device Package: 100-VFBGA (7x7)
Applications: Professional Video
Function: Processor
Mounting Type: Surface Mount
Package / Case: 100-VFBGA
Packaging: Tray
auf Bestellung 894 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.32 EUR |
| 5+ | 27.62 EUR |
| 10+ | 26.61 EUR |
| 25+ | 25.41 EUR |
| 50+ | 24.59 EUR |
| 100+ | 23.84 EUR |
| 500+ | 22.31 EUR |
| AP0202AT2L00XPGA0-DR |
|
Hersteller: onsemi
Description: IC VID IMAGE SGNL PROC 100VFBGA
Supplier Device Package: 100-VFBGA (7x7)
Applications: Professional Video
Function: Processor
Mounting Type: Surface Mount
Package / Case: 100-VFBGA
Packaging: Tray
Description: IC VID IMAGE SGNL PROC 100VFBGA
Supplier Device Package: 100-VFBGA (7x7)
Applications: Professional Video
Function: Processor
Mounting Type: Surface Mount
Package / Case: 100-VFBGA
Packaging: Tray
auf Bestellung 2201 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.34 EUR |
| 5+ | 14.79 EUR |
| 10+ | 14.22 EUR |
| 25+ | 13.54 EUR |
| 50+ | 13.08 EUR |
| 100+ | 12.65 EUR |
| 500+ | 12.14 EUR |
| NJVMJD210T4G |
|
Hersteller: onsemi
Description: TRANS PNP 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
Description: TRANS PNP 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NJVMJD210T4G |
|
Hersteller: onsemi
Description: TRANS PNP 25V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
Description: TRANS PNP 25V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
auf Bestellung 2065 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.64 EUR |
| 13+ | 1.65 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.77 EUR |
| MJD210TF |
|
Hersteller: onsemi
Description: TRANS PNP 25V 5A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
Description: TRANS PNP 25V 5A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1025+ | 0.56 EUR |
| MJD210TF |
|
Hersteller: onsemi
Description: TRANS PNP 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
Description: TRANS PNP 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD210TF |
|
Hersteller: onsemi
Description: TRANS PNP 25V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
Description: TRANS PNP 25V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSH210TM |
|
Hersteller: onsemi
Description: TRANS PNP 25V 5A DPAK
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: TRANS PNP 25V 5A DPAK
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSH210TM |
|
Hersteller: onsemi
Description: TRANS PNP 25V 5A DPAK
Packaging: Cut Tape (CT)
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description: TRANS PNP 25V 5A DPAK
Packaging: Cut Tape (CT)
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP7808TG |
|
Hersteller: onsemi
Description: IC REG LINEAR 8V 1A TO220-3
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 2V @ 1A (Typ)
PSRR: 72dB (120Hz)
Voltage - Output (Min/Fixed): 8V
Supplier Device Package: TO-220
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 8 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C (TJ)
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Bulk
Description: IC REG LINEAR 8V 1A TO220-3
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 2V @ 1A (Typ)
PSRR: 72dB (120Hz)
Voltage - Output (Min/Fixed): 8V
Supplier Device Package: TO-220
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 8 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C (TJ)
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Bulk
auf Bestellung 14036 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1275+ | 0.45 EUR |
| NOIP1SN0480A-STI |
|
Hersteller: onsemi
Description: IC CMOS IMAGE SENSOR 1/3.6" BW_
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 808H x 608V
Frames per Second: 120.0
Description: IC CMOS IMAGE SENSOR 1/3.6" BW_
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 808H x 608V
Frames per Second: 120.0
auf Bestellung 349 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 52.17 EUR |
| 5+ | 47.79 EUR |
| 10+ | 46.16 EUR |
| 25+ | 44.21 EUR |
| 50+ | 42.88 EUR |
| 100+ | 41.65 EUR |
| FDSS2407 |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 62V 3.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.27W
Drain to Source Voltage (Vdss): 62V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 62V 3.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.27W
Drain to Source Voltage (Vdss): 62V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DM74S374N |
|
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Quiescent (Iq): 110 mA
Current - Output High, Low: 6.5mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 75 MHz
Supplier Device Package: 20-PDIP
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Quiescent (Iq): 110 mA
Current - Output High, Low: 6.5mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 75 MHz
Supplier Device Package: 20-PDIP
Number of Bits per Element: 8
Produkt ist nicht verfügbar
Mindestbestellmenge: 18 Stücke
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| NCP136AFCRC080T2G |
|
Hersteller: onsemi
Description: IC REG LINEAR 0.8V 700MA 6-WLCSP
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.06V @ 700mA
PSRR: 75dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 0.8V
Supplier Device Package: 6-WLCSP (1.4x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 700mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 0.8V 700MA 6-WLCSP
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.06V @ 700mA
PSRR: 75dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 0.8V
Supplier Device Package: 6-WLCSP (1.4x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 700mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| NCP136AFCRC080T2G |
|
Hersteller: onsemi
Description: IC REG LINEAR 0.8V 700MA 6-WLCSP
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.06V @ 700mA
PSRR: 75dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 0.8V
Supplier Device Package: 6-WLCSP (1.4x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 700mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 0.8V 700MA 6-WLCSP
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.06V @ 700mA
PSRR: 75dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 0.8V
Supplier Device Package: 6-WLCSP (1.4x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 700mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.99 EUR |
| 30+ | 0.7 EUR |
| 34+ | 0.63 EUR |
| 100+ | 0.55 EUR |
| 250+ | 0.51 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.46 EUR |
| 2500+ | 0.45 EUR |
| NSR15405NXT5G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1.5A 2DSN
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: 2-DSN (1.4x0.6)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 85pF @ 2V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 33 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 1.5A 2DSN
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: 2-DSN (1.4x0.6)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 85pF @ 2V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 33 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSR15405NXT5G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1.5A 2DSN
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: 2-DSN (1.4x0.6)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 85pF @ 2V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 33 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Bulk
Description: DIODE SCHOTTKY 40V 1.5A 2DSN
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: 2-DSN (1.4x0.6)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 85pF @ 2V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 33 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Bulk
auf Bestellung 26830 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1931+ | 0.29 EUR |
| NB3N3010BDR2G |
Hersteller: onsemi
Description: IC CLOCK GENERATOR PLL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 12.288MHz
Input: Clock
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: USB Applications
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR PLL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 12.288MHz
Input: Clock
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: USB Applications
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NB3N3010BDR2G |
Hersteller: onsemi
Description: IC CLOCK GENERATOR PLL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 12.288MHz
Input: Clock
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: USB Applications
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR PLL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 12.288MHz
Input: Clock
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: USB Applications
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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