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NCV8560MN250R2G NCV8560MN250R2G onsemi ncv8560-d.pdf Description: IC REG LINEAR 2.5V 150MA 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 175 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
PSRR: 62dB ~ 38dB (120Hz ~ 10kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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NCV59151MN25TYG NCV59151MN25TYG onsemi ncp59150-d.pdf Description: IC REG LINEAR 2.5V 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 13.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (4x4)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable, Error Flag
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 1.5A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCP59151MN25TYG NCP59151MN25TYG onsemi ncp59150-d.pdf Description: IC REG LINEAR 2.5V 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 13.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (4x4)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable, Error Flag
Voltage Dropout (Max): 0.5V @ 1.5A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Produkt ist nicht verfügbar
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NCP5661MN25T2G NCP5661MN25T2G onsemi ncp5661-d.pdf Description: IC REG LINEAR 2.5V 1A 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 3 mA
Voltage - Input (Max): 9V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3.3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB ~ 65dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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NCP691MN25T2G NCP691MN25T2G onsemi ncp690-d.pdf Description: IC REG LINEAR 2.5V 1A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.3V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 240 µA
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NCP691MN25T2G NCP691MN25T2G onsemi ncp690-d.pdf Description: IC REG LINEAR 2.5V 1A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.3V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 240 µA
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250+0.92 EUR
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NCV8605MN25T2G NCV8605MN25T2G onsemi ncv8605-d.pdf Description: IC REG LINEAR 2.5V 500MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3.3)
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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10+2.39 EUR
25+2.25 EUR
100+1.80 EUR
250+1.58 EUR
500+1.53 EUR
1000+1.22 EUR
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AR2020CSSM13SMTA0-DP2 AR2020CSSM13SMTA0-DP2 onsemi create-overview-pdf Description: 20MP 1/1.8 CIS SO
Packaging: Tray
Type: CMOS
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 5120H x 3840V
Frames per Second: 60.0
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AR2020CSSM13SMTA0-DP AR2020CSSM13SMTA0-DP onsemi create-overview-pdf Description: 20MP 1/1.8 CIS SO
Packaging: Tray
Type: CMOS
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 5120H x 3840V
Frames per Second: 60.0
auf Bestellung 867 Stücke:
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5+88.32 EUR
10+85.62 EUR
25+82.38 EUR
50+80.17 EUR
100+78.14 EUR
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2SB1302S-TD-E 2SB1302S-TD-E onsemi 2sb1302-d.pdf Description: TRANS PNP 20V 5A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.3 W
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FFAF40U60DNTU FFAF40U60DNTU onsemi FFAF40U60DN.pdf Description: DIODE ARRAY GP 600V 40A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Produkt ist nicht verfügbar
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NJVMJD6039T4G NJVMJD6039T4G onsemi mjd6039-d.pdf Description: TRANS NPN DARL 80V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
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NJVMJD6039T4G NJVMJD6039T4G onsemi mjd6039-d.pdf Description: TRANS NPN DARL 80V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
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CAT24C32C4CTR CAT24C32C4CTR onsemi cat24c32-d.pdf Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Bulk
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.77x0.77)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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FDD1600N10ALZD FDD1600N10ALZD onsemi fdd1600n10alzd-d.pdf Description: MOSFET N-CH 100V 6.8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V
Power Dissipation (Max): 14.9W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
Produkt ist nicht verfügbar
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FDD1600N10ALZD FDD1600N10ALZD onsemi fdd1600n10alzd-d.pdf Description: MOSFET N-CH 100V 6.8A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V
Power Dissipation (Max): 14.9W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
Produkt ist nicht verfügbar
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FDD14AN06LA0 FDD14AN06LA0 onsemi FDD14AN06LA0.pdf Description: MOSFET N-CH 60V 9.5A/50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Produkt ist nicht verfügbar
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CAT25640VI-G CAT25640VI-G onsemi cat25640-d.pdf Description: IC EEPROM 64KBIT SPI 20MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 12846 Stücke:
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770+0.63 EUR
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LV5071M-TLM-H onsemi LV5071M.pdf Description: IC REG BUCK ADJ 1A 12MFPS
Packaging: Tape & Reel (TR)
Package / Case: 12-LSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MFPS
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 2.95V
Voltage - Output (Min/Fixed): 0.8V
Produkt ist nicht verfügbar
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LV5071M-TLM-H onsemi LV5071M.pdf Description: IC REG BUCK ADJ 1A 12MFPS
Packaging: Bulk
Package / Case: 12-LSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MFPS
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 2.95V
Voltage - Output (Min/Fixed): 0.8V
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SN74LS02D SN74LS02D onsemi sn74ls02 Description: IC GATE NOR 4CH 2-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 400µA, 16mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 15ns @ 5V, 15pF
Number of Circuits: 4
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MBR20L60CTG MBR20L60CTG onsemi mbr20l60ct-d.pdf Description: DIODE ARRAY SCHOT 60V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 60 V
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CAT24C08TDI-GT3 CAT24C08TDI-GT3 onsemi cat24c01-d.pdf Description: IC EEPROM 8KBIT 400KHZ TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
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CAT24C08TDI-GT3 CAT24C08TDI-GT3 onsemi cat24c01-d.pdf Description: IC EEPROM 8KBIT 400KHZ TSOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
auf Bestellung 4125 Stücke:
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40+0.44 EUR
42+0.42 EUR
43+0.41 EUR
50+0.40 EUR
100+0.39 EUR
250+0.38 EUR
500+0.37 EUR
1000+0.36 EUR
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NSM80100MT1G NSM80100MT1G onsemi nsm80100m-d.pdf Description: TRANS PNP 80V 0.5A SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 270 mW
Produkt ist nicht verfügbar
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NSM80100MT1G NSM80100MT1G onsemi nsm80100m-d.pdf Description: TRANS PNP 80V 0.5A SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 270 mW
auf Bestellung 2979 Stücke:
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28+0.65 EUR
40+0.44 EUR
100+0.30 EUR
500+0.23 EUR
1000+0.21 EUR
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NB7NPQ1404E2MMUTWG NB7NPQ1404E2MMUTWG onsemi nb7npq1404e2m-d.pdf Description: NB7NPQ1404E2M - 3.3 V USB 3.1 GE
Packaging: Tape & Reel (TR)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Current - Supply: 250mA
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UQFN (2.5x4.5)
Signal Conditioning: Input Equalization
Produkt ist nicht verfügbar
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NB7NPQ1404E2MMUTWG NB7NPQ1404E2MMUTWG onsemi nb7npq1404e2m-d.pdf Description: NB7NPQ1404E2M - 3.3 V USB 3.1 GE
Packaging: Cut Tape (CT)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Current - Supply: 250mA
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UQFN (2.5x4.5)
Signal Conditioning: Input Equalization
auf Bestellung 3600 Stücke:
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3+6.99 EUR
10+4.50 EUR
25+3.85 EUR
100+3.12 EUR
250+2.76 EUR
500+2.54 EUR
1000+2.36 EUR
2500+2.31 EUR
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FDS6930A FDS6930A onsemi FAIRS26730-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 30V 5.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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FDS6930A FDS6930A onsemi FAIRS26730-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 30V 5.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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NTC160N120SC1 onsemi NTC160N120SC1-D.PDF Description: SILICON CARBIDE MOSFET, CHANNEL,
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
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NVC160N120SC1 onsemi NVC160N120SC1-D.PDF Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Qualification: AEC-Q101
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NVBG070N120M3S NVBG070N120M3S onsemi NVBG070N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
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NVBG070N120M3S NVBG070N120M3S onsemi NVBG070N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
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NTBG070N120M3S NTBG070N120M3S onsemi NTBG070N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
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NTBG070N120M3S NTBG070N120M3S onsemi NTBG070N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
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NTH4L070N120M3S NTH4L070N120M3S onsemi nth4l070n120m3s-d.pdf Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
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NVH4L070N120M3S NVH4L070N120M3S onsemi nvh4l070n120m3s-d.pdf Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
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30+18.21 EUR
120+17.62 EUR
510+15.39 EUR
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SA28ARL SA28ARL onsemi SA5.0A-D.pdf Description: TVS DIODE 28VWM 45.4VC AXIAL
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
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2049+0.24 EUR
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NLAS3257CMX3TCG onsemi Description: MUX / DEMUX ANALOG SWITCH LOW VO
Packaging: Bulk
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 9.9Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 6-XLLGA (1x1)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -21dB @ 240MHz
Switch Circuit: SPDT - Open/Closed
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 300mOhm
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel Capacitance (CS(off), CD(off)): 1.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Produkt ist nicht verfügbar
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NVVR26A120M1WSB NVVR26A120M1WSB onsemi nvvr26a120m1wsb-d.pdf Description: MOSFET 2N-CH 1200V AHPM15-CDE
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDE
Grade: Automotive
Qualification: AEC-Q101
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NVVR26A120M1WST NVVR26A120M1WST onsemi nvvr26a120m1wst-d.pdf Description: MOSFET 2N-CH 1200V AHPM15-CDA
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDA
Grade: Automotive
Qualification: AEC-Q101
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NVVR26A120M1WSS NVVR26A120M1WSS onsemi nvvr26a120m1wss-d.pdf Description: MOSFET 2N-CH 1200V AHPM15-CDI
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDI
Grade: Automotive
Qualification: AEC-Q101
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SZNUP2201MR6T1G SZNUP2201MR6T1G onsemi NUP2201MR6-D.PDF Description: TVS DIODE 5VWM 20VC 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: DVI, Telecom, USB
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Grade: Automotive
Qualification: AEC-Q101
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SZP6SMB27AT3G SZP6SMB27AT3G onsemi ONSM-S-A0001810395-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 700pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MMBV105GLT1 MMBV105GLT1 onsemi mmbv105glt1-d.pdf Description: DIODE TUNING SS 30V SOT23
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMBV105GLT1 MMBV105GLT1 onsemi mmbv105glt1-d.pdf Description: DIODE TUNING SS 30V SOT23
Packaging: Bulk
auf Bestellung 32671 Stücke:
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NSBC114EDP6T5G NSBC114EDP6T5G onsemi dtc114ed-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Bulk
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 408mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
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SZNZ8F5V6SMX2WT5G SZNZ8F5V6SMX2WT5G onsemi nz8f2v4mx2w-d.pdf Description: 5.6V ZENER TIGHT TOLERANCE IN X2
Tolerance: ±2.32%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Qualification: AEC-Q101
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SZNZ8F5V6SMX2WT5G SZNZ8F5V6SMX2WT5G onsemi nz8f2v4mx2w-d.pdf Description: 5.6V ZENER TIGHT TOLERANCE IN X2
Tolerance: ±2.32%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Qualification: AEC-Q101
auf Bestellung 6996 Stücke:
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46+0.39 EUR
67+0.27 EUR
100+0.18 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
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PCFG60T120SQF onsemi PCFG60T120SQF-D.PDF Description: IGBT FIELD STOP 1200V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A
Supplier Device Package: Wafer
IGBT Type: Field Stop
Gate Charge: 318 nC
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
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MC33761SNT1-050 MC33761SNT1-050 onsemi mc33761-d.pdf Description: IC REG LINEAR 5V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
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2049+0.25 EUR
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MC33761SNT1-029 MC33761SNT1-029 onsemi mc33761-d.pdf Description: IC REG LINEAR 2.9V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
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MC33761SNT1-028 MC33761SNT1-028 onsemi mc33761-d.pdf Description: IC REG LINEAR 2.8V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
auf Bestellung 3084 Stücke:
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2049+0.25 EUR
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MC33761SNT1-028G MC33761SNT1-028G onsemi mc33761-d.pdf Description: IC REG LINEAR 2.8V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
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1048+0.47 EUR
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MC33761SNT1-029G MC33761SNT1-029G onsemi mc33761-d.pdf Description: IC REG LINEAR 2.9V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
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919+0.53 EUR
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NSVUMZ1NT1G NSVUMZ1NT1G onsemi umz1nt1-d.pdf Description: TRANS NPN/PNP 50V 200MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 114MHz, 142MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12267 Stücke:
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42+0.42 EUR
69+0.26 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.10 EUR
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1SMA26CAT3 1SMA26CAT3 onsemi 1SMA10CAT3 Series.pdf Description: TVS 400W 26V BIDIRECT SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CAT24C512WIGT3JN CAT24C512WIGT3JN onsemi cat24c512-d.pdf Description: 512-KB I2C SERIAL EEPROM
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
Produkt ist nicht verfügbar
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CAT24C512WIGT3JN CAT24C512WIGT3JN onsemi cat24c512-d.pdf Description: 512-KB I2C SERIAL EEPROM
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
auf Bestellung 2968 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
20+0.92 EUR
25+0.90 EUR
50+0.88 EUR
100+0.86 EUR
250+0.83 EUR
500+0.81 EUR
1000+0.80 EUR
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NCV8560MN250R2G ncv8560-d.pdf
NCV8560MN250R2G
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 150MA 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 175 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
PSRR: 62dB ~ 38dB (120Hz ~ 10kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 77900 Stücke:
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Anzahl Preis
475+1.01 EUR
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NCV59151MN25TYG ncp59150-d.pdf
NCV59151MN25TYG
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 13.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (4x4)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable, Error Flag
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 1.5A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCP59151MN25TYG ncp59150-d.pdf
NCP59151MN25TYG
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 13.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (4x4)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable, Error Flag
Voltage Dropout (Max): 0.5V @ 1.5A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Produkt ist nicht verfügbar
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NCP5661MN25T2G ncp5661-d.pdf
NCP5661MN25T2G
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 1A 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 3 mA
Voltage - Input (Max): 9V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3.3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB ~ 65dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
auf Bestellung 30630 Stücke:
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Anzahl Preis
411+1.17 EUR
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NCP691MN25T2G ncp690-d.pdf
NCP691MN25T2G
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 1A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.3V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 240 µA
auf Bestellung 3000 Stücke:
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3000+0.69 EUR
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NCP691MN25T2G ncp690-d.pdf
NCP691MN25T2G
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 1A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.3V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 240 µA
auf Bestellung 5895 Stücke:
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Anzahl Preis
7+2.59 EUR
12+1.58 EUR
25+1.32 EUR
100+1.05 EUR
250+0.92 EUR
500+0.84 EUR
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NCV8605MN25T2G ncv8605-d.pdf
NCV8605MN25T2G
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 500MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3.3)
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
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Anzahl Preis
7+2.66 EUR
10+2.39 EUR
25+2.25 EUR
100+1.80 EUR
250+1.58 EUR
500+1.53 EUR
1000+1.22 EUR
Mindestbestellmenge: 7
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AR2020CSSM13SMTA0-DP2 create-overview-pdf
AR2020CSSM13SMTA0-DP2
Hersteller: onsemi
Description: 20MP 1/1.8 CIS SO
Packaging: Tray
Type: CMOS
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 5120H x 3840V
Frames per Second: 60.0
auf Bestellung 1100 Stücke:
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Anzahl Preis
1+120.03 EUR
5+101.25 EUR
10+94.09 EUR
25+92.15 EUR
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AR2020CSSM13SMTA0-DP create-overview-pdf
AR2020CSSM13SMTA0-DP
Hersteller: onsemi
Description: 20MP 1/1.8 CIS SO
Packaging: Tray
Type: CMOS
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 5120H x 3840V
Frames per Second: 60.0
auf Bestellung 867 Stücke:
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Anzahl Preis
1+95.57 EUR
5+88.32 EUR
10+85.62 EUR
25+82.38 EUR
50+80.17 EUR
100+78.14 EUR
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2SB1302S-TD-E 2sb1302-d.pdf
2SB1302S-TD-E
Hersteller: onsemi
Description: TRANS PNP 20V 5A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.3 W
auf Bestellung 4000 Stücke:
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Anzahl Preis
1109+0.45 EUR
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FFAF40U60DNTU FFAF40U60DN.pdf
FFAF40U60DNTU
Hersteller: onsemi
Description: DIODE ARRAY GP 600V 40A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Produkt ist nicht verfügbar
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NJVMJD6039T4G mjd6039-d.pdf
NJVMJD6039T4G
Hersteller: onsemi
Description: TRANS NPN DARL 80V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
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NJVMJD6039T4G mjd6039-d.pdf
NJVMJD6039T4G
Hersteller: onsemi
Description: TRANS NPN DARL 80V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
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CAT24C32C4CTR cat24c32-d.pdf
CAT24C32C4CTR
Hersteller: onsemi
Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Bulk
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.77x0.77)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
auf Bestellung 654000 Stücke:
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Anzahl Preis
2176+0.22 EUR
Mindestbestellmenge: 2176
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FDD1600N10ALZD fdd1600n10alzd-d.pdf
FDD1600N10ALZD
Hersteller: onsemi
Description: MOSFET N-CH 100V 6.8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V
Power Dissipation (Max): 14.9W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
Produkt ist nicht verfügbar
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FDD1600N10ALZD fdd1600n10alzd-d.pdf
FDD1600N10ALZD
Hersteller: onsemi
Description: MOSFET N-CH 100V 6.8A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V
Power Dissipation (Max): 14.9W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
Produkt ist nicht verfügbar
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FDD14AN06LA0 FDD14AN06LA0.pdf
FDD14AN06LA0
Hersteller: onsemi
Description: MOSFET N-CH 60V 9.5A/50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Produkt ist nicht verfügbar
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CAT25640VI-G cat25640-d.pdf
CAT25640VI-G
Hersteller: onsemi
Description: IC EEPROM 64KBIT SPI 20MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 12846 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
770+0.63 EUR
Mindestbestellmenge: 770
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LV5071M-TLM-H LV5071M.pdf
Hersteller: onsemi
Description: IC REG BUCK ADJ 1A 12MFPS
Packaging: Tape & Reel (TR)
Package / Case: 12-LSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MFPS
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 2.95V
Voltage - Output (Min/Fixed): 0.8V
Produkt ist nicht verfügbar
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LV5071M-TLM-H LV5071M.pdf
Hersteller: onsemi
Description: IC REG BUCK ADJ 1A 12MFPS
Packaging: Bulk
Package / Case: 12-LSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MFPS
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 2.95V
Voltage - Output (Min/Fixed): 0.8V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
392+1.24 EUR
Mindestbestellmenge: 392
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SN74LS02D sn74ls02
SN74LS02D
Hersteller: onsemi
Description: IC GATE NOR 4CH 2-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 400µA, 16mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 15ns @ 5V, 15pF
Number of Circuits: 4
auf Bestellung 13122 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
412+1.19 EUR
Mindestbestellmenge: 412
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MBR20L60CTG mbr20l60ct-d.pdf
MBR20L60CTG
Hersteller: onsemi
Description: DIODE ARRAY SCHOT 60V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 60 V
auf Bestellung 11850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
366+1.37 EUR
Mindestbestellmenge: 366
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CAT24C08TDI-GT3 cat24c01-d.pdf
CAT24C08TDI-GT3
Hersteller: onsemi
Description: IC EEPROM 8KBIT 400KHZ TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.36 EUR
Mindestbestellmenge: 3000
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CAT24C08TDI-GT3 cat24c01-d.pdf
CAT24C08TDI-GT3
Hersteller: onsemi
Description: IC EEPROM 8KBIT 400KHZ TSOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
auf Bestellung 4125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
42+0.42 EUR
43+0.41 EUR
50+0.40 EUR
100+0.39 EUR
250+0.38 EUR
500+0.37 EUR
1000+0.36 EUR
Mindestbestellmenge: 40
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NSM80100MT1G nsm80100m-d.pdf
NSM80100MT1G
Hersteller: onsemi
Description: TRANS PNP 80V 0.5A SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 270 mW
Produkt ist nicht verfügbar
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NSM80100MT1G nsm80100m-d.pdf
NSM80100MT1G
Hersteller: onsemi
Description: TRANS PNP 80V 0.5A SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 270 mW
auf Bestellung 2979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
40+0.44 EUR
100+0.30 EUR
500+0.23 EUR
1000+0.21 EUR
Mindestbestellmenge: 28
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NB7NPQ1404E2MMUTWG nb7npq1404e2m-d.pdf
NB7NPQ1404E2MMUTWG
Hersteller: onsemi
Description: NB7NPQ1404E2M - 3.3 V USB 3.1 GE
Packaging: Tape & Reel (TR)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Current - Supply: 250mA
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UQFN (2.5x4.5)
Signal Conditioning: Input Equalization
Produkt ist nicht verfügbar
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NB7NPQ1404E2MMUTWG nb7npq1404e2m-d.pdf
NB7NPQ1404E2MMUTWG
Hersteller: onsemi
Description: NB7NPQ1404E2M - 3.3 V USB 3.1 GE
Packaging: Cut Tape (CT)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Current - Supply: 250mA
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UQFN (2.5x4.5)
Signal Conditioning: Input Equalization
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.99 EUR
10+4.50 EUR
25+3.85 EUR
100+3.12 EUR
250+2.76 EUR
500+2.54 EUR
1000+2.36 EUR
2500+2.31 EUR
Mindestbestellmenge: 3
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FDS6930A FAIRS26730-1.pdf?t.download=true&u=5oefqw
FDS6930A
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 5.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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FDS6930A FAIRS26730-1.pdf?t.download=true&u=5oefqw
FDS6930A
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 5.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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NTC160N120SC1 NTC160N120SC1-D.PDF
Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, CHANNEL,
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Produkt ist nicht verfügbar
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NVC160N120SC1 NVC160N120SC1-D.PDF
Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVBG070N120M3S NVBG070N120M3S-D.PDF
NVBG070N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 684800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+14.09 EUR
Mindestbestellmenge: 800
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NVBG070N120M3S NVBG070N120M3S-D.PDF
NVBG070N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 685408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.82 EUR
10+18.83 EUR
100+16.72 EUR
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NTBG070N120M3S NTBG070N120M3S-D.PDF
NTBG070N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+5.58 EUR
Mindestbestellmenge: 800
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NTBG070N120M3S NTBG070N120M3S-D.PDF
NTBG070N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
auf Bestellung 1138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.13 EUR
10+8.91 EUR
100+6.53 EUR
Mindestbestellmenge: 2
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NTH4L070N120M3S nth4l070n120m3s-d.pdf
NTH4L070N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
auf Bestellung 530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.58 EUR
10+10.68 EUR
450+7.65 EUR
Mindestbestellmenge: 2
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NVH4L070N120M3S nvh4l070n120m3s-d.pdf
NVH4L070N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 9162 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.05 EUR
30+18.21 EUR
120+17.62 EUR
510+15.39 EUR
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SA28ARL SA5.0A-D.pdf
SA28ARL
Hersteller: onsemi
Description: TVS DIODE 28VWM 45.4VC AXIAL
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2049+0.24 EUR
Mindestbestellmenge: 2049
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NLAS3257CMX3TCG
Hersteller: onsemi
Description: MUX / DEMUX ANALOG SWITCH LOW VO
Packaging: Bulk
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 9.9Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 6-XLLGA (1x1)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -21dB @ 240MHz
Switch Circuit: SPDT - Open/Closed
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 300mOhm
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel Capacitance (CS(off), CD(off)): 1.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Produkt ist nicht verfügbar
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NVVR26A120M1WSB nvvr26a120m1wsb-d.pdf
NVVR26A120M1WSB
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V AHPM15-CDE
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDE
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1356.26 EUR
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NVVR26A120M1WST nvvr26a120m1wst-d.pdf
NVVR26A120M1WST
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V AHPM15-CDA
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDA
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1356.26 EUR
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NVVR26A120M1WSS nvvr26a120m1wss-d.pdf
NVVR26A120M1WSS
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V AHPM15-CDI
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDI
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1356.26 EUR
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SZNUP2201MR6T1G NUP2201MR6-D.PDF
SZNUP2201MR6T1G
Hersteller: onsemi
Description: TVS DIODE 5VWM 20VC 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: DVI, Telecom, USB
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SZP6SMB27AT3G ONSM-S-A0001810395-1.pdf?t.download=true&u=5oefqw
SZP6SMB27AT3G
Hersteller: onsemi
Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 700pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1567+0.32 EUR
Mindestbestellmenge: 1567
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MMBV105GLT1 mmbv105glt1-d.pdf
MMBV105GLT1
Hersteller: onsemi
Description: DIODE TUNING SS 30V SOT23
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMBV105GLT1 mmbv105glt1-d.pdf
MMBV105GLT1
Hersteller: onsemi
Description: DIODE TUNING SS 30V SOT23
Packaging: Bulk
auf Bestellung 32671 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1158+0.43 EUR
Mindestbestellmenge: 1158
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NSBC114EDP6T5G dtc114ed-d.pdf
NSBC114EDP6T5G
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Bulk
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 408mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
auf Bestellung 529587 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4948+0.10 EUR
Mindestbestellmenge: 4948
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SZNZ8F5V6SMX2WT5G nz8f2v4mx2w-d.pdf
SZNZ8F5V6SMX2WT5G
Hersteller: onsemi
Description: 5.6V ZENER TIGHT TOLERANCE IN X2
Tolerance: ±2.32%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SZNZ8F5V6SMX2WT5G nz8f2v4mx2w-d.pdf
SZNZ8F5V6SMX2WT5G
Hersteller: onsemi
Description: 5.6V ZENER TIGHT TOLERANCE IN X2
Tolerance: ±2.32%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Qualification: AEC-Q101
auf Bestellung 6996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
67+0.27 EUR
100+0.18 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 46
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PCFG60T120SQF PCFG60T120SQF-D.PDF
Hersteller: onsemi
Description: IGBT FIELD STOP 1200V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A
Supplier Device Package: Wafer
IGBT Type: Field Stop
Gate Charge: 318 nC
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Produkt ist nicht verfügbar
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MC33761SNT1-050 mc33761-d.pdf
MC33761SNT1-050
Hersteller: onsemi
Description: IC REG LINEAR 5V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2049+0.25 EUR
Mindestbestellmenge: 2049
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MC33761SNT1-029 mc33761-d.pdf
MC33761SNT1-029
Hersteller: onsemi
Description: IC REG LINEAR 2.9V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
auf Bestellung 5844 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2049+0.25 EUR
Mindestbestellmenge: 2049
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MC33761SNT1-028 mc33761-d.pdf
MC33761SNT1-028
Hersteller: onsemi
Description: IC REG LINEAR 2.8V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
auf Bestellung 3084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2049+0.25 EUR
Mindestbestellmenge: 2049
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MC33761SNT1-028G mc33761-d.pdf
MC33761SNT1-028G
Hersteller: onsemi
Description: IC REG LINEAR 2.8V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
auf Bestellung 12375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1048+0.47 EUR
Mindestbestellmenge: 1048
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MC33761SNT1-029G mc33761-d.pdf
MC33761SNT1-029G
Hersteller: onsemi
Description: IC REG LINEAR 2.9V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
919+0.53 EUR
Mindestbestellmenge: 919
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NSVUMZ1NT1G umz1nt1-d.pdf
NSVUMZ1NT1G
Hersteller: onsemi
Description: TRANS NPN/PNP 50V 200MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 114MHz, 142MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12267 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
69+0.26 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.10 EUR
Mindestbestellmenge: 42
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1SMA26CAT3 1SMA10CAT3 Series.pdf
1SMA26CAT3
Hersteller: onsemi
Description: TVS 400W 26V BIDIRECT SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CAT24C512WIGT3JN cat24c512-d.pdf
CAT24C512WIGT3JN
Hersteller: onsemi
Description: 512-KB I2C SERIAL EEPROM
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
Produkt ist nicht verfügbar
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CAT24C512WIGT3JN cat24c512-d.pdf
CAT24C512WIGT3JN
Hersteller: onsemi
Description: 512-KB I2C SERIAL EEPROM
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
auf Bestellung 2968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
20+0.92 EUR
25+0.90 EUR
50+0.88 EUR
100+0.86 EUR
250+0.83 EUR
500+0.81 EUR
1000+0.80 EUR
Mindestbestellmenge: 19
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