| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDS6930A | onsemi |
 Description: MOSFET 2N-CH 30V 5.5A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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| NTC160N120SC1 | onsemi |
Description: SILICON CARBIDE MOSFET, CHANNEL, Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V |
Produkt ist nicht verfügbar |
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| NVC160N120SC1 | onsemi |
Description: SILICON CARBIDE MOSFET, NCHANNEL Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: Die Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NVBG070N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET-ELI Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 172W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 7mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 684800 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG070N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET-ELI Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 172W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 7mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 685408 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG070N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - E Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 172W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 7mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG070N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - E Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 172W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 7mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V |
auf Bestellung 1138 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4L070N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET EL Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 7mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V |
auf Bestellung 530 Stücke: Lieferzeit 10-14 Tag (e) |
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NVH4L070N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET-ELI Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 7mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 9162 Stücke: Lieferzeit 10-14 Tag (e) |
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SA28ARL | onsemi |
Description: TVS DIODE 28VWM 45.4VC AXIAL Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 500W Power Line Protection: No |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NLAS3257CMX3TCG | onsemi |
Description: MUX / DEMUX ANALOG SWITCH LOW VO Packaging: Bulk Package / Case: 6-XFLGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 9.9Ohm -3db Bandwidth: 1GHz Supplier Device Package: 6-XLLGA (1x1) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Crosstalk: -21dB @ 240MHz Switch Circuit: SPDT - Open/Closed Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 300mOhm Switch Time (Ton, Toff) (Max): 30ns, 25ns Channel Capacitance (CS(off), CD(off)): 1.5pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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NVVR26A120M1WSB | onsemi |
Description: MOSFET 2N-CH 1200V AHPM15-CDE Packaging: Tube Package / Case: 15-PowerDIP Module (2.441", 62.00mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1kW (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 3.2V @ 150mA Supplier Device Package: AHPM15-CDE Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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NVVR26A120M1WST | onsemi |
Description: MOSFET 2N-CH 1200V AHPM15-CDA Packaging: Tube Package / Case: 15-PowerDIP Module (2.441", 62.00mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1kW (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 3.2V @ 150mA Supplier Device Package: AHPM15-CDA Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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NVVR26A120M1WSS | onsemi |
Description: MOSFET 2N-CH 1200V AHPM15-CDI Packaging: Tube Package / Case: 15-PowerDIP Module (2.441", 62.00mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1kW (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 150mA Supplier Device Package: AHPM15-CDI Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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SZNUP2201MR6T1G | onsemi |
Description: TVS DIODE 5VWM 20VC 6TSOP Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: DVI, Telecom, USB Capacitance @ Frequency: 3pF @ 1MHz Current - Peak Pulse (10/1000µs): 25A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 6-TSOP Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 500W Power Line Protection: Yes Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SZP6SMB27AT3G | onsemi |
Description: TVS DIODE 23.1VWM 37.5V DO214AA Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 700pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 23.1V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 37.5V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5500 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBV105GLT1 | onsemi |
Description: DIODE TUNING SS 30V SOT23 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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MMBV105GLT1 | onsemi |
Description: DIODE TUNING SS 30V SOT23 Packaging: Bulk |
auf Bestellung 32671 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC114EDP6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-963 Packaging: Bulk Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 408mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-963 |
auf Bestellung 529587 Stücke: Lieferzeit 10-14 Tag (e) |
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SZNZ8F5V6SMX2WT5G | onsemi |
Description: 5.6V ZENER TIGHT TOLERANCE IN X2 Tolerance: ±2.32% Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: 2-X2DFNW (1x0.6) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SZNZ8F5V6SMX2WT5G | onsemi |
Description: 5.6V ZENER TIGHT TOLERANCE IN X2 Tolerance: ±2.32% Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: 2-X2DFNW (1x0.6) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V Qualification: AEC-Q101 |
auf Bestellung 6996 Stücke: Lieferzeit 10-14 Tag (e) |
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| PCFG60T120SQF | onsemi |
Description: IGBT FIELD STOP 1200V WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A Supplier Device Package: Wafer IGBT Type: Field Stop Gate Charge: 318 nC Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 240 A |
Produkt ist nicht verfügbar |
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MC33761SNT1-050 | onsemi |
Description: IC REG LINEAR 5V 80MA 5-TSOP Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 180 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 5V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 80mA Protection Features: Antisaturation, Over Current, Over Temperature |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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MC33761SNT1-029 | onsemi |
Description: IC REG LINEAR 2.9V 80MA 5-TSOP Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 180 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 2.9V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 80mA Protection Features: Antisaturation, Over Current, Over Temperature |
auf Bestellung 5844 Stücke: Lieferzeit 10-14 Tag (e) |
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MC33761SNT1-028 | onsemi |
Description: IC REG LINEAR 2.8V 80MA 5-TSOP Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 180 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 2.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 80mA Protection Features: Antisaturation, Over Current, Over Temperature |
auf Bestellung 3084 Stücke: Lieferzeit 10-14 Tag (e) |
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MC33761SNT1-028G | onsemi |
Description: IC REG LINEAR 2.8V 80MA 5TSOP Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 180 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 2.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 80mA Protection Features: Antisaturation, Over Current, Over Temperature |
auf Bestellung 12375 Stücke: Lieferzeit 10-14 Tag (e) |
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MC33761SNT1-029G | onsemi |
Description: IC REG LINEAR 2.9V 80MA 5TSOP Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 180 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 2.9V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 80mA Protection Features: Antisaturation, Over Current, Over Temperature |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVUMZ1NT1G | onsemi |
Description: TRANS NPN/PNP 50V 200MA SOT-363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Complementary Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 114MHz, 142MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 12267 Stücke: Lieferzeit 10-14 Tag (e) |
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1SMA26CAT3 | onsemi |
Description: TVS 400W 26V BIDIRECT SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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CAT24C512WIGT3JN | onsemi |
Description: 512-KB I2C SERIAL EEPROM Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 64K x 8 |
Produkt ist nicht verfügbar |
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CAT24C512WIGT3JN | onsemi |
Description: 512-KB I2C SERIAL EEPROM Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 64K x 8 |
auf Bestellung 2968 Stücke: Lieferzeit 10-14 Tag (e) |
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NXH010P120M3F1PG | onsemi |
Description: MOSFET 2N-CH 1200V 105A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 272W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6451pF @ 800V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 90A, 18V Gate Charge (Qg) (Max) @ Vgs: 314nC @ 18V Vgs(th) (Max) @ Id: 4.4V @ 45mA |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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NXH010P120M3F1PTG | onsemi |
Description: MOSFET 2N-CH 1200V 105A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 272W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6451pF @ 800V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 90A, 18V Gate Charge (Qg) (Max) @ Vgs: 314nC @ 18V Vgs(th) (Max) @ Id: 4.4V @ 45mA |
auf Bestellung 4227 Stücke: Lieferzeit 10-14 Tag (e) |
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NXH010P120MNF1PTNG | onsemi |
Description: MOSFET 2N-CH 1200V 114A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 250W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V Vgs(th) (Max) @ Id: 4.3V @ 40mA |
auf Bestellung 1006 Stücke: Lieferzeit 10-14 Tag (e) |
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NXH006P120M3F2PTHG | onsemi |
Description: MOSFET 2N-CH 1200V 191A 36PIM Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 556W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 191A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 11914pF @ 800V Rds On (Max) @ Id, Vgs: 8mOhm @ 100A, 18V Gate Charge (Qg) (Max) @ Vgs: 622nC @ 20V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4.4V @ 80mA Supplier Device Package: 36-PIM (56.7x62.8) |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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| BD238 | onsemi |
Description: TRANS PNP 80V 2A TO-126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 3MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W |
Produkt ist nicht verfügbar |
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SZESD8011MUT5G | onsemi |
Description: TVS DIODE 5.5VWM 17.2VC 2X3DFN Packaging: Bulk Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB Capacitance @ Frequency: 0.1pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.5V Voltage - Clamping (Max) @ Ipp: 17.2V (Typ) Power - Peak Pulse: 34W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| SSVPZT751T1G | onsemi |
Description: IC TRANS HC XSTR SOT223 Packaging: Bulk |
auf Bestellung 13000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCP5310MTWG | onsemi |
Description: TRANS PNP 80V 1A 3WDFNW Packaging: Bulk Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCP5310MTWG | onsemi |
Description: TRANS PNP 80V 1A 3WDFNW Packaging: Bulk Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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MJD31CT4GN | onsemi |
Description: TRANS NPN 100V 3A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.56 W |
Produkt ist nicht verfügbar |
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MC33275DT-3.0RKG | onsemi |
Description: IC REG LINEAR 3V 300MA DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 13V Number of Regulators: 1 Supplier Device Package: DPAK Voltage - Output (Min/Fixed): 3V PSRR: 75dB (120Hz) Voltage Dropout (Max): 0.5V @ 300mA Protection Features: Over Current, Over Temperature |
auf Bestellung 2351 Stücke: Lieferzeit 10-14 Tag (e) |
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CS5204-5GT3 | onsemi |
Description: IC REG LINEAR 5V 4A TO220AB Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 4A Operating Temperature: 0°C ~ 70°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 17V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 5V PSRR: 75dB (120Hz) Voltage Dropout (Max): 1.2V @ 4A Protection Features: Over Current, Over Temperature |
auf Bestellung 21650 Stücke: Lieferzeit 10-14 Tag (e) |
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CS5204-1GT3 | onsemi |
Description: IC REG LINEAR POS ADJ 4A TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Adjustable Mounting Type: Through Hole Current - Output: 4A Operating Temperature: 0°C ~ 70°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 17V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Max): 13V Voltage - Output (Min/Fixed): 1.25V PSRR: 82dB (120Hz) Voltage Dropout (Max): 1.2V @ 4A Protection Features: Over Current, Over Temperature |
auf Bestellung 7949 Stücke: Lieferzeit 10-14 Tag (e) |
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CS5204-3GT3 | onsemi |
Description: IC REG LINEAR 3.3V 4A TO220AB Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 4A Operating Temperature: 0°C ~ 70°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 17V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 3.3V PSRR: 75dB (120Hz) Voltage Dropout (Max): 1.2V @ 4A Protection Features: Over Current, Over Temperature |
auf Bestellung 1350 Stücke: Lieferzeit 10-14 Tag (e) |
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CS5204-2GDPR3 | onsemi |
Description: IC REG LINEAR 1.5V 4A D2PAK-3 Packaging: Bulk Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 4A Operating Temperature: 0°C ~ 70°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 17V Number of Regulators: 1 Supplier Device Package: D2PAK-3 Voltage - Output (Min/Fixed): 1.5V PSRR: 75dB (120Hz) Voltage Dropout (Max): 1.2V @ 4A Protection Features: Over Current, Over Temperature |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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CS5204-1GDPR3 | onsemi |
Description: IC REG LINEAR POS ADJ 4A D2PAK-3 Packaging: Bulk Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 4A Operating Temperature: 0°C ~ 70°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 17V Number of Regulators: 1 Supplier Device Package: D2PAK-3 Voltage - Output (Max): 13V Voltage - Output (Min/Fixed): 1.25V PSRR: 82dB (120Hz) Voltage Dropout (Max): 1.2V @ 4A Protection Features: Over Current, Over Temperature |
auf Bestellung 744 Stücke: Lieferzeit 10-14 Tag (e) |
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CS5204-2GT3 | onsemi |
Description: IC REG LINEAR 1.5V 4A TO220AB Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 4A Operating Temperature: 0°C ~ 70°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 17V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 1.5V PSRR: 75dB (120Hz) Voltage Dropout (Max): 1.2V @ 4A Protection Features: Over Current, Over Temperature |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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| HCPL2631SDVM | onsemi |
Description: OPTOISO 2.5KV 2CH OPN COLL 8-SMD Packaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.4V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 2500Vrms Current - DC Forward (If) (Max): 30mA Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 50ns, 12ns Common Mode Transient Immunity (Min): 5kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 2 Current - Output / Channel: 50 mA |
Produkt ist nicht verfügbar |
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AR0821CSSC18SMEA0-DPBR2 | onsemi |
Description: 8MP 1/2 CIS SO Packaging: Tray Package / Case: 95-FBGA Type: CMOS Pixel Size: 2.1µm x 2.1µm Active Pixel Array: 3848H x 2168V Supplier Device Package: 95-IBGA (11x8) Frames per Second: 60.0 |
Produkt ist nicht verfügbar |
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74AC32PC | onsemi |
Description: IC GATE OR 4CH 2-INP 14MDIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-MDIP Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
Produkt ist nicht verfügbar |
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74AC32SJ | onsemi |
Description: IC GATE OR 4CH 2-INP 14SOP Packaging: Tube Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
Produkt ist nicht verfügbar |
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74AC32SC_NL | onsemi |
Description: IC GATE OR 4CH 2-INP 14SOIC Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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H11L3SM | onsemi |
Description: OPTOISO 4.17KV OPN COLL 6-SMD Packaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 15V Voltage - Forward (Vf) (Typ): 1.2V Data Rate: 1MHz Input Type: DC Voltage - Isolation: 4170Vrms Current - DC Forward (If) (Max): 30mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SMD Rise / Fall Time (Typ): 100ns, 100ns Propagation Delay tpLH / tpHL (Max): 4µs, 4µs Number of Channels: 1 Current - Output / Channel: 50 mA |
auf Bestellung 528 Stücke: Lieferzeit 10-14 Tag (e) |
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TIL113 | onsemi |
Description: OPTOISO 5.3KV DARL W/BASE 6DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Darlington with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Voltage - Isolation: 5300Vrms Current Transfer Ratio (Min): 300% @ 10mA Vce Saturation (Max): 1.25V Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 350ns, 55µs Number of Channels: 1 Current - DC Forward (If) (Max): 100 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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H11D1 | onsemi |
Description: OPTOISO 5.3KV TRANS W/BASE 6-DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 100mA Voltage - Isolation: 5300Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 6-DIP Voltage - Output (Max): 300V Turn On / Turn Off Time (Typ): 5µs, 5µs Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
Produkt ist nicht verfügbar |
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H11D1S | onsemi |
Description: OPTOISO 5.3KV TRANS W/BASE 6-SMD Packaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 100mA Voltage - Isolation: 5300Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 6-SMD Voltage - Output (Max): 300V Turn On / Turn Off Time (Typ): 5µs, 5µs Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MJD32CT4GN | onsemi |
Description: TRANS PNP 100V 3A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.56 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KA2901DTF | onsemi |
Description: IC COMPARATOR 4 GEN PUR 14SOP Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: DTL, MOS, Open-Collector, TTL Mounting Type: Surface Mount Number of Elements: 4 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 14-SOP Current - Quiescent (Max): 2.5mA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 18mA @ 5V |
Produkt ist nicht verfügbar |
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KA2901DTF | onsemi |
Description: IC COMPARATOR 4 GEN PUR 14SOP Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: DTL, MOS, Open-Collector, TTL Mounting Type: Surface Mount Number of Elements: 4 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 14-SOP Current - Quiescent (Max): 2.5mA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 18mA @ 5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDS6930A |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 5.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 30V 5.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTC160N120SC1 |
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Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, CHANNEL,
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Description: SILICON CARBIDE MOSFET, CHANNEL,
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVC160N120SC1 |
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Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Qualification: AEC-Q101
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBG070N120M3S |
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Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 684800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 14.09 EUR |
| NVBG070N120M3S |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 685408 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 25.82 EUR |
| 10+ | 18.83 EUR |
| 100+ | 16.72 EUR |
| NTBG070N120M3S |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 5.58 EUR |
| NTBG070N120M3S |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
auf Bestellung 1138 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.13 EUR |
| 10+ | 8.91 EUR |
| 100+ | 6.53 EUR |
| NTH4L070N120M3S |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
auf Bestellung 530 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 15.58 EUR |
| 10+ | 10.68 EUR |
| 450+ | 7.65 EUR |
| NVH4L070N120M3S |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 9162 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 27.05 EUR |
| 30+ | 18.21 EUR |
| 120+ | 17.62 EUR |
| 510+ | 15.39 EUR |
| SA28ARL |
|
Hersteller: onsemi
Description: TVS DIODE 28VWM 45.4VC AXIAL
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 28VWM 45.4VC AXIAL
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2049+ | 0.24 EUR |
| NLAS3257CMX3TCG |
Hersteller: onsemi
Description: MUX / DEMUX ANALOG SWITCH LOW VO
Packaging: Bulk
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 9.9Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 6-XLLGA (1x1)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -21dB @ 240MHz
Switch Circuit: SPDT - Open/Closed
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 300mOhm
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel Capacitance (CS(off), CD(off)): 1.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: MUX / DEMUX ANALOG SWITCH LOW VO
Packaging: Bulk
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 9.9Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 6-XLLGA (1x1)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -21dB @ 240MHz
Switch Circuit: SPDT - Open/Closed
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 300mOhm
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel Capacitance (CS(off), CD(off)): 1.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVVR26A120M1WSB |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V AHPM15-CDE
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDE
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 1200V AHPM15-CDE
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDE
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 1356.26 EUR |
| NVVR26A120M1WST |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V AHPM15-CDA
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDA
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 1200V AHPM15-CDA
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDA
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 1356.26 EUR |
| NVVR26A120M1WSS |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V AHPM15-CDI
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDI
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 1200V AHPM15-CDI
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1.75µC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDI
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 1356.26 EUR |
| SZNUP2201MR6T1G |
|
Hersteller: onsemi
Description: TVS DIODE 5VWM 20VC 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: DVI, Telecom, USB
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 20VC 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: DVI, Telecom, USB
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZP6SMB27AT3G |
|
Hersteller: onsemi
Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 700pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 700pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1567+ | 0.32 EUR |
| MMBV105GLT1 |
|
auf Bestellung 32671 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1158+ | 0.43 EUR |
| NSBC114EDP6T5G |
|
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Bulk
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 408mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Bulk
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 408mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
auf Bestellung 529587 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4948+ | 0.10 EUR |
| SZNZ8F5V6SMX2WT5G |
|
Hersteller: onsemi
Description: 5.6V ZENER TIGHT TOLERANCE IN X2
Tolerance: ±2.32%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Qualification: AEC-Q101
Description: 5.6V ZENER TIGHT TOLERANCE IN X2
Tolerance: ±2.32%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZNZ8F5V6SMX2WT5G |
|
Hersteller: onsemi
Description: 5.6V ZENER TIGHT TOLERANCE IN X2
Tolerance: ±2.32%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Qualification: AEC-Q101
Description: 5.6V ZENER TIGHT TOLERANCE IN X2
Tolerance: ±2.32%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Qualification: AEC-Q101
auf Bestellung 6996 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 0.39 EUR |
| 67+ | 0.27 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.11 EUR |
| PCFG60T120SQF |
|
Hersteller: onsemi
Description: IGBT FIELD STOP 1200V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A
Supplier Device Package: Wafer
IGBT Type: Field Stop
Gate Charge: 318 nC
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Description: IGBT FIELD STOP 1200V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A
Supplier Device Package: Wafer
IGBT Type: Field Stop
Gate Charge: 318 nC
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33761SNT1-050 |
|
Hersteller: onsemi
Description: IC REG LINEAR 5V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
Description: IC REG LINEAR 5V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2049+ | 0.25 EUR |
| MC33761SNT1-029 |
|
Hersteller: onsemi
Description: IC REG LINEAR 2.9V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
Description: IC REG LINEAR 2.9V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
auf Bestellung 5844 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2049+ | 0.25 EUR |
| MC33761SNT1-028 |
|
Hersteller: onsemi
Description: IC REG LINEAR 2.8V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
Description: IC REG LINEAR 2.8V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
auf Bestellung 3084 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2049+ | 0.25 EUR |
| MC33761SNT1-028G |
|
Hersteller: onsemi
Description: IC REG LINEAR 2.8V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
Description: IC REG LINEAR 2.8V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
auf Bestellung 12375 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1048+ | 0.47 EUR |
| MC33761SNT1-029G |
|
Hersteller: onsemi
Description: IC REG LINEAR 2.9V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
Description: IC REG LINEAR 2.9V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 919+ | 0.53 EUR |
| NSVUMZ1NT1G |
|
Hersteller: onsemi
Description: TRANS NPN/PNP 50V 200MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 114MHz, 142MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN/PNP 50V 200MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 114MHz, 142MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12267 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 0.42 EUR |
| 69+ | 0.26 EUR |
| 111+ | 0.16 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.10 EUR |
| CAT24C512WIGT3JN |
|
Hersteller: onsemi
Description: 512-KB I2C SERIAL EEPROM
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
Description: 512-KB I2C SERIAL EEPROM
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT24C512WIGT3JN |
|
Hersteller: onsemi
Description: 512-KB I2C SERIAL EEPROM
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
Description: 512-KB I2C SERIAL EEPROM
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
auf Bestellung 2968 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.97 EUR |
| 20+ | 0.92 EUR |
| 25+ | 0.90 EUR |
| 50+ | 0.88 EUR |
| 100+ | 0.86 EUR |
| 250+ | 0.83 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.80 EUR |
| NXH010P120M3F1PG |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 272W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6451pF @ 800V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 90A, 18V
Gate Charge (Qg) (Max) @ Vgs: 314nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 45mA
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 272W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6451pF @ 800V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 90A, 18V
Gate Charge (Qg) (Max) @ Vgs: 314nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 45mA
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 111.83 EUR |
| NXH010P120M3F1PTG |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 272W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6451pF @ 800V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 90A, 18V
Gate Charge (Qg) (Max) @ Vgs: 314nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 45mA
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 272W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6451pF @ 800V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 90A, 18V
Gate Charge (Qg) (Max) @ Vgs: 314nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 45mA
auf Bestellung 4227 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 111.83 EUR |
| NXH010P120MNF1PTNG |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
auf Bestellung 1006 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 167.25 EUR |
| NXH006P120M3F2PTHG |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 191A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 556W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 191A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11914pF @ 800V
Rds On (Max) @ Id, Vgs: 8mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 622nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 80mA
Supplier Device Package: 36-PIM (56.7x62.8)
Description: MOSFET 2N-CH 1200V 191A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 556W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 191A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11914pF @ 800V
Rds On (Max) @ Id, Vgs: 8mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 622nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 80mA
Supplier Device Package: 36-PIM (56.7x62.8)
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 218.63 EUR |
| BD238 |
|
Hersteller: onsemi
Description: TRANS PNP 80V 2A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Description: TRANS PNP 80V 2A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZESD8011MUT5G |
|
Hersteller: onsemi
Description: TVS DIODE 5.5VWM 17.2VC 2X3DFN
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 17.2V (Typ)
Power - Peak Pulse: 34W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.5VWM 17.2VC 2X3DFN
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 17.2V (Typ)
Power - Peak Pulse: 34W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SSVPZT751T1G |
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 701+ | 0.69 EUR |
| BCP5310MTWG |
|
Hersteller: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 24+ | 0.76 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.34 EUR |
| 3000+ | 0.29 EUR |
| NSVBCP5310MTWG |
|
Hersteller: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD31CT4GN |
|
Hersteller: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Description: TRANS NPN 100V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33275DT-3.0RKG |
|
Hersteller: onsemi
Description: IC REG LINEAR 3V 300MA DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 13V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 3V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3V 300MA DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 13V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 3V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 2351 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 552+ | 0.76 EUR |
| CS5204-5GT3 |
|
Hersteller: onsemi
Description: IC REG LINEAR 5V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 4A
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 17V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 5V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.2V @ 4A
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 5V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 4A
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 17V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 5V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.2V @ 4A
Protection Features: Over Current, Over Temperature
auf Bestellung 21650 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 579+ | 0.84 EUR |
| CS5204-1GT3 |
|
Hersteller: onsemi
Description: IC REG LINEAR POS ADJ 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 4A
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 17V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): 13V
Voltage - Output (Min/Fixed): 1.25V
PSRR: 82dB (120Hz)
Voltage Dropout (Max): 1.2V @ 4A
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR POS ADJ 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 4A
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 17V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): 13V
Voltage - Output (Min/Fixed): 1.25V
PSRR: 82dB (120Hz)
Voltage Dropout (Max): 1.2V @ 4A
Protection Features: Over Current, Over Temperature
auf Bestellung 7949 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 410+ | 1.17 EUR |
| CS5204-3GT3 |
|
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 4A
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 17V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.2V @ 4A
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 4A
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 17V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.2V @ 4A
Protection Features: Over Current, Over Temperature
auf Bestellung 1350 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 579+ | 0.84 EUR |
| CS5204-2GDPR3 |
|
Hersteller: onsemi
Description: IC REG LINEAR 1.5V 4A D2PAK-3
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 4A
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 17V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): 1.5V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.2V @ 4A
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.5V 4A D2PAK-3
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 4A
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 17V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): 1.5V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.2V @ 4A
Protection Features: Over Current, Over Temperature
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 750+ | 0.84 EUR |
| CS5204-1GDPR3 |
|
Hersteller: onsemi
Description: IC REG LINEAR POS ADJ 4A D2PAK-3
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 4A
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 17V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Max): 13V
Voltage - Output (Min/Fixed): 1.25V
PSRR: 82dB (120Hz)
Voltage Dropout (Max): 1.2V @ 4A
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR POS ADJ 4A D2PAK-3
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 4A
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 17V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Max): 13V
Voltage - Output (Min/Fixed): 1.25V
PSRR: 82dB (120Hz)
Voltage Dropout (Max): 1.2V @ 4A
Protection Features: Over Current, Over Temperature
auf Bestellung 744 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 744+ | 0.84 EUR |
| CS5204-2GT3 |
|
Hersteller: onsemi
Description: IC REG LINEAR 1.5V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 4A
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 17V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 1.5V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.2V @ 4A
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.5V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 4A
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 17V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 1.5V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.2V @ 4A
Protection Features: Over Current, Over Temperature
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 579+ | 0.84 EUR |
| HCPL2631SDVM |
|
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH OPN COLL 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 50 mA
Description: OPTOISO 2.5KV 2CH OPN COLL 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AR0821CSSC18SMEA0-DPBR2 |
Hersteller: onsemi
Description: 8MP 1/2 CIS SO
Packaging: Tray
Package / Case: 95-FBGA
Type: CMOS
Pixel Size: 2.1µm x 2.1µm
Active Pixel Array: 3848H x 2168V
Supplier Device Package: 95-IBGA (11x8)
Frames per Second: 60.0
Description: 8MP 1/2 CIS SO
Packaging: Tray
Package / Case: 95-FBGA
Type: CMOS
Pixel Size: 2.1µm x 2.1µm
Active Pixel Array: 3848H x 2168V
Supplier Device Package: 95-IBGA (11x8)
Frames per Second: 60.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AC32PC |
|
Hersteller: onsemi
Description: IC GATE OR 4CH 2-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 4CH 2-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AC32SJ |
|
Hersteller: onsemi
Description: IC GATE OR 4CH 2-INP 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 4CH 2-INP 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AC32SC_NL |
|
Hersteller: onsemi
Description: IC GATE OR 4CH 2-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 4CH 2-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| H11L3SM |
|
Hersteller: onsemi
Description: OPTOISO 4.17KV OPN COLL 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 4.17KV OPN COLL 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 528 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.87 EUR |
| 50+ | 1.06 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.83 EUR |
| TIL113 |
|
Hersteller: onsemi
Description: OPTOISO 5.3KV DARL W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 300% @ 10mA
Vce Saturation (Max): 1.25V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 350ns, 55µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Description: OPTOISO 5.3KV DARL W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 300% @ 10mA
Vce Saturation (Max): 1.25V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 350ns, 55µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| H11D1 |
|
Hersteller: onsemi
Description: OPTOISO 5.3KV TRANS W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 5.3KV TRANS W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
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| H11D1S |
|
Hersteller: onsemi
Description: OPTOISO 5.3KV TRANS W/BASE 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 5.3KV TRANS W/BASE 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
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| MJD32CT4GN |
|
Hersteller: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Description: TRANS PNP 100V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
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| KA2901DTF |
|
Hersteller: onsemi
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: DTL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: DTL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
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| KA2901DTF |
|
Hersteller: onsemi
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: DTL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: DTL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
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