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74VHC112M 74VHC112M onsemi ONSM-S-A0003546545-1.pdf?t.download=true&u=5oefqw Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Negative Edge
Clock Frequency: 185 MHz
Input Capacitance: 4 pF
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Number of Bits per Element: 1
Produkt ist nicht verfügbar
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UF3C170400B7S UF3C170400B7S onsemi UF3C170400B7S-D.PDF Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
800+7.58 EUR
Mindestbestellmenge: 800
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UF3C170400B7S UF3C170400B7S onsemi UF3C170400B7S-D.PDF Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
auf Bestellung 8301 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.16 EUR
10+11.16 EUR
100+9.28 EUR
Mindestbestellmenge: 2
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UJ4C075060K3S UJ4C075060K3S onsemi uj4c075060k3s-d.pdf Description: SICFET N-CH 750V 28A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
auf Bestellung 14453 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.77 EUR
30+13.15 EUR
120+12.34 EUR
510+10.31 EUR
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UJ4C075060K4S UJ4C075060K4S onsemi UJ4C075060K4S-D.PDF Description: SICFET N-CH 750V 28A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.29 EUR
30+12.31 EUR
120+10.56 EUR
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UJ3C120080K3S UJ3C120080K3S onsemi uj3c120080k3s-d.pdf Description: SICFET N-CH 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Power Dissipation (Max): 254.2W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 3993 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.59 EUR
30+16.95 EUR
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UJ4SC075018B7S UJ4SC075018B7S onsemi UJ4SC075018B7S-D.PDF Description: 750V/18MOHM, N-OFF SIC STACK CAS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V
auf Bestellung 13600 Stücke:
Lieferzeit 10-14 Tag (e)
800+20.64 EUR
Mindestbestellmenge: 800
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UJ4SC075018B7S UJ4SC075018B7S onsemi UJ4SC075018B7S-D.PDF Description: 750V/18MOHM, N-OFF SIC STACK CAS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V
auf Bestellung 13913 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.11 EUR
10+25.36 EUR
100+25.26 EUR
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UF3SC120040B7S UF3SC120040B7S onsemi UF3SC120040B7S-D.PDF Description: 1200V/40MOHM, SIC, STACKED FAST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
800+31.05 EUR
Mindestbestellmenge: 800
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UF3SC120040B7S UF3SC120040B7S onsemi UF3SC120040B7S-D.PDF Description: 1200V/40MOHM, SIC, STACKED FAST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 5474 Stücke:
Lieferzeit 10-14 Tag (e)
1+48.54 EUR
10+38 EUR
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UJ4SC075005L8S UJ4SC075005L8S onsemi UJ4SC075005L8S-D.PDF Description: SICFET N-CH 750V 120A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V
Power Dissipation (Max): 1153W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+55.27 EUR
Mindestbestellmenge: 2000
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UJ4SC075005L8S UJ4SC075005L8S onsemi UJ4SC075005L8S-D.PDF Description: SICFET N-CH 750V 120A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V
Power Dissipation (Max): 1153W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
auf Bestellung 2070 Stücke:
Lieferzeit 10-14 Tag (e)
1+77.12 EUR
10+67.66 EUR
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UF3C120400B7S UF3C120400B7S onsemi UF3C120400B7S-D.PDF Description: SICFET N-CH 1200V 7.6A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V
auf Bestellung 39200 Stücke:
Lieferzeit 10-14 Tag (e)
800+5.78 EUR
Mindestbestellmenge: 800
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UF3C120400B7S UF3C120400B7S onsemi UF3C120400B7S-D.PDF Description: SICFET N-CH 1200V 7.6A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V
auf Bestellung 39361 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.15 EUR
10+8.98 EUR
100+7.07 EUR
Mindestbestellmenge: 2
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UJ4C075060B7S UJ4C075060B7S onsemi UJ4C075060B7S-D.PDF Description: 750V/60MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
auf Bestellung 10400 Stücke:
Lieferzeit 10-14 Tag (e)
800+8.23 EUR
Mindestbestellmenge: 800
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UJ4C075060B7S UJ4C075060B7S onsemi UJ4C075060B7S-D.PDF Description: 750V/60MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
auf Bestellung 10678 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.21 EUR
10+11.92 EUR
100+10.07 EUR
Mindestbestellmenge: 2
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UF3C120150B7S UF3C120150B7S onsemi UF3C120150B7S-D.PDF Description: 1200V/150MOHM, SIC, FAST CASCODE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 25.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
auf Bestellung 136800 Stücke:
Lieferzeit 10-14 Tag (e)
800+8.38 EUR
Mindestbestellmenge: 800
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UF3C120150B7S UF3C120150B7S onsemi UF3C120150B7S-D.PDF Description: 1200V/150MOHM, SIC, FAST CASCODE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 25.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
auf Bestellung 137995 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.46 EUR
10+12.1 EUR
100+10.26 EUR
Mindestbestellmenge: 2
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UF3C065080B7S UF3C065080B7S onsemi UF3C065080B7S-D.PDF Description: SICFET N-CH 650V 27A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 136.4W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 100 V
auf Bestellung 14400 Stücke:
Lieferzeit 10-14 Tag (e)
800+9.06 EUR
Mindestbestellmenge: 800
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UF3C065080B7S UF3C065080B7S onsemi UF3C065080B7S-D.PDF Description: SICFET N-CH 650V 27A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 136.4W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 100 V
auf Bestellung 15461 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.53 EUR
10+12.9 EUR
100+11.09 EUR
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UJ4C075033B7S UJ4C075033B7S onsemi UJ4C075033B7S-D.PDF Description: 750V/33MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
800+12.29 EUR
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UJ4C075033B7S UJ4C075033B7S onsemi UJ4C075033B7S-D.PDF Description: 750V/33MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
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UF3C120080B7S UF3C120080B7S onsemi UF3C120080B7S-D.PDF Description: SICFET N-CH 1200V 28.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
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UF3C120080B7S UF3C120080B7S onsemi UF3C120080B7S-D.PDF Description: SICFET N-CH 1200V 28.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
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UF3SC065030B7S UF3SC065030B7S onsemi da008647 Description: 650V/30MOHM, SIC, STACKED FAST C
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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UF3SC065030B7S UF3SC065030B7S onsemi da008647 Description: 650V/30MOHM, SIC, STACKED FAST C
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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UJ4SC075011B7S UJ4SC075011B7S onsemi UJ4SC075011B7S-D.PDF Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
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UJ4SC075011B7S UJ4SC075011B7S onsemi UJ4SC075011B7S-D.PDF Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
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NTH4L013N120M3S NTH4L013N120M3S onsemi nth4l013n120m3s-d.pdf Description: DISCRETE SIC M3S 1200V 13MOHM
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 151A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 75A, 18V
Power Dissipation (Max): 682W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 37mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5813 pF @ 800 V
auf Bestellung 385 Stücke:
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MOC8102 MOC8102 onsemi CNY17x, CNY17Fx, MOC810x.pdf Description: OPTOISOLATOR 5.3KV TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 73% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 117% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 1µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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MC100E137FN MC100E137FN onsemi mc10e137-d.pdf Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.5 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
auf Bestellung 1909 Stücke:
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MC10E137FNR2G MC10E137FNR2G onsemi mc10e137-d.pdf Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.7 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
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MC100E137FNR2G MC100E137FNR2G onsemi mc10e137-d.pdf Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.5 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
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MC10E137FNG MC10E137FNG onsemi mc10e137-d.pdf Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.7 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
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SN74LS367ADR2 SN74LS367ADR2 onsemi MOTOD030-5-322.pdf?t.download=true&u=5oefqw Description: BUFFER/LINE DRIVER 6-CH
Packaging: Bulk
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MCT6 MCT6 onsemi MCT62-D.pdf Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
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UF3SC120016K3S UF3SC120016K3S onsemi UF3SC120016K3S-D.PDF Description: SICFET N-CH 1200V 107A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V
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UF3SC120016K4S UF3SC120016K4S onsemi UF3SC120016K4S-D.PDF Description: SICFET N-CH 1200V 107A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V
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DFD05TL-BT onsemi SNYOD003-89.pdf?t.download=true&u=5oefqw Description: DFD05 - RECTIFIER DIODE, 0.5A, 8
Packaging: Bulk
auf Bestellung 99000 Stücke:
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NLV74HC04ADR2G NLV74HC04ADR2G onsemi mc74hc04a-d.pdf Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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BSP50 BSP50 onsemi FAIRS43277-1.pdf?t.download=true&u=5oefqw description Description: TRANS NPN DARL 45V 0.8A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
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MBR2080CT MBR2080CT onsemi MBR20%2880%2C90%2C100%29CT.pdf Description: DIODE ARRAY SCHOT 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
Produkt ist nicht verfügbar
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3MN03SF-TL-E 3MN03SF-TL-E onsemi 3MN03SF-TL-E.pdf?t.download=true&u=axiww2 Description: RF TRANS NPN 20V 320MHZ 3-SSFP
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Power - Max: 150mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V
Frequency - Transition: 320MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: 3-SSFP
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MMSD485B MMSD485B onsemi FAIRS45395-1.pdf?t.download=true&u=5oefqw Description: DIODE STANDARD SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
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SZESD5Z5.0T1G SZESD5Z5.0T1G onsemi esd5z2.5t1-d.pdf Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 240W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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25+0.7 EUR
39+0.45 EUR
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500+0.19 EUR
1000+0.17 EUR
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NCS2554DTBR2G NCS2554DTBR2G onsemi ncs2554-d.pdf Description: IC AMP REC FILTR 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Applications: Reconstruction Filter
Voltage - Supply, Single/Dual (±): 4.7V ~ 5.3V
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Supply: 40 mA
Current - Output / Channel: 40 mA
-3db Bandwidth: 8 MHz
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CM1457-04CP onsemi cm1457-d.pdf Description: FILTR LC(PI) 70NH/12.5PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA, WLCSP
Size / Dimension: 0.066" L x 0.041" W (1.67mm x 1.05mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 70nH (Total), C = 12.5pF (Total)
Height: 0.027" (0.69mm)
Attenuation Value: -35dB @ 800MHz ~ 2.7GHz
Filter Order: 5th
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 300MHz (Cutoff)
Resistance - Channel (Ohms): 45
ESD Protection: Yes
Number of Channels: 4
Current: 15 mA
Produkt ist nicht verfügbar
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CM1457-04CP onsemi cm1457-d.pdf Description: FILTR LC(PI) 70NH/12.5PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 10-WFBGA, WLCSP
Size / Dimension: 0.066" L x 0.041" W (1.67mm x 1.05mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 70nH (Total), C = 12.5pF (Total)
Height: 0.027" (0.69mm)
Attenuation Value: -35dB @ 800MHz ~ 2.7GHz
Filter Order: 5th
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 300MHz (Cutoff)
Resistance - Channel (Ohms): 45
ESD Protection: Yes
Number of Channels: 4
Current: 15 mA
Produkt ist nicht verfügbar
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FFSB1065B FFSB1065B onsemi ffsb1065b-d.pdf Description: DIODE SIL CARBIDE 650V 27A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
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FFSB1065B FFSB1065B onsemi ffsb1065b-d.pdf Description: DIODE SIL CARBIDE 650V 27A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 686 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.85 EUR
10+4.5 EUR
100+3.17 EUR
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FFSB1065B-F085 FFSB1065B-F085 onsemi ffsb1065b-f085-d.pdf Description: DIODE SIL CARBIDE 650V 27A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
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800+2.68 EUR
Mindestbestellmenge: 800
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FFSB1065B-F085 FFSB1065B-F085 onsemi ffsb1065b-f085-d.pdf Description: DIODE SIL CARBIDE 650V 27A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 1530 Stücke:
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3+7.6 EUR
10+5.01 EUR
100+3.55 EUR
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FFSB1065A FFSB1065A onsemi ffsb1065a-d.pdf Description: DIODE SIL CARBIDE 650V 14A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 1600 Stücke:
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800+3.2 EUR
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FFSB1065A FFSB1065A onsemi ffsb1065a-d.pdf Description: DIODE SIL CARBIDE 650V 14A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 1600 Stücke:
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3+8.66 EUR
10+5.75 EUR
100+4.11 EUR
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TIP32A TIP32A onsemi tip31a-d.pdf Description: TRANS PNP 60V 3A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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PCGLA200T75NF8 onsemi PCGLA200T75NF8-D.PDF Description: IGBT TRENCH FS 750V 200A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 200A
Supplier Device Package: Wafer
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 257ns/247.5ns
Test Condition: 400V, 200A, 2Ohm, 15V
Gate Charge: 718 nC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NCV6324CMTAAWTBG NCV6324CMTAAWTBG onsemi ncp6324-d.pdf Description: IC REG BUCK ADJ 2A 8WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 8-WDFNW (2x2)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 18000 Stücke:
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3000+0.89 EUR
6000+0.84 EUR
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NCV6324CMTAAWTBG NCV6324CMTAAWTBG onsemi ncp6324-d.pdf Description: IC REG BUCK ADJ 2A 8WDFNW
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 8-WDFNW (2x2)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 20495 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.41 EUR
10+2.13 EUR
25+1.79 EUR
100+1.41 EUR
250+1.22 EUR
500+1.1 EUR
1000+1.01 EUR
Mindestbestellmenge: 6
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50C02MH-TL-E 50C02MH-TL-E onsemi 50c02mh-d.pdf Description: TRANS NPN 50V 0.5A 3-MCPH
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 500MHz
Supplier Device Package: 3-MCPH
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 600 mW
auf Bestellung 178450 Stücke:
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3109+0.17 EUR
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SPS1M001A-03 onsemi Description: RFID TAG R/W 902-928MHZ INLAY
Packaging: Tape & Reel (TR)
Size / Dimension: 6.469" L x 0.787" W (165.00mm x 20.00mm)
Style: Inlay
Frequency: 902MHz ~ 928MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 18000-6, EPC
Writable Memory: 128b (EPC)
auf Bestellung 94765 Stücke:
Lieferzeit 10-14 Tag (e)
60+15.75 EUR
Mindestbestellmenge: 60
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74VHC112M ONSM-S-A0003546545-1.pdf?t.download=true&u=5oefqw
74VHC112M
Hersteller: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Negative Edge
Clock Frequency: 185 MHz
Input Capacitance: 4 pF
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Number of Bits per Element: 1
Produkt ist nicht verfügbar
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UF3C170400B7S UF3C170400B7S-D.PDF
UF3C170400B7S
Hersteller: onsemi
Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+7.58 EUR
Mindestbestellmenge: 800
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UF3C170400B7S UF3C170400B7S-D.PDF
UF3C170400B7S
Hersteller: onsemi
Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
auf Bestellung 8301 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.16 EUR
10+11.16 EUR
100+9.28 EUR
Mindestbestellmenge: 2
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UJ4C075060K3S uj4c075060k3s-d.pdf
UJ4C075060K3S
Hersteller: onsemi
Description: SICFET N-CH 750V 28A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
auf Bestellung 14453 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.77 EUR
30+13.15 EUR
120+12.34 EUR
510+10.31 EUR
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UJ4C075060K4S UJ4C075060K4S-D.PDF
UJ4C075060K4S
Hersteller: onsemi
Description: SICFET N-CH 750V 28A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.29 EUR
30+12.31 EUR
120+10.56 EUR
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UJ3C120080K3S uj3c120080k3s-d.pdf
UJ3C120080K3S
Hersteller: onsemi
Description: SICFET N-CH 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Power Dissipation (Max): 254.2W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 3993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.59 EUR
30+16.95 EUR
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UJ4SC075018B7S UJ4SC075018B7S-D.PDF
UJ4SC075018B7S
Hersteller: onsemi
Description: 750V/18MOHM, N-OFF SIC STACK CAS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V
auf Bestellung 13600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+20.64 EUR
Mindestbestellmenge: 800
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UJ4SC075018B7S UJ4SC075018B7S-D.PDF
UJ4SC075018B7S
Hersteller: onsemi
Description: 750V/18MOHM, N-OFF SIC STACK CAS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V
auf Bestellung 13913 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.11 EUR
10+25.36 EUR
100+25.26 EUR
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UF3SC120040B7S UF3SC120040B7S-D.PDF
UF3SC120040B7S
Hersteller: onsemi
Description: 1200V/40MOHM, SIC, STACKED FAST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+31.05 EUR
Mindestbestellmenge: 800
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UF3SC120040B7S UF3SC120040B7S-D.PDF
UF3SC120040B7S
Hersteller: onsemi
Description: 1200V/40MOHM, SIC, STACKED FAST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 5474 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+48.54 EUR
10+38 EUR
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UJ4SC075005L8S UJ4SC075005L8S-D.PDF
UJ4SC075005L8S
Hersteller: onsemi
Description: SICFET N-CH 750V 120A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V
Power Dissipation (Max): 1153W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+55.27 EUR
Mindestbestellmenge: 2000
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UJ4SC075005L8S UJ4SC075005L8S-D.PDF
UJ4SC075005L8S
Hersteller: onsemi
Description: SICFET N-CH 750V 120A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V
Power Dissipation (Max): 1153W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
auf Bestellung 2070 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.12 EUR
10+67.66 EUR
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UF3C120400B7S UF3C120400B7S-D.PDF
UF3C120400B7S
Hersteller: onsemi
Description: SICFET N-CH 1200V 7.6A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V
auf Bestellung 39200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+5.78 EUR
Mindestbestellmenge: 800
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UF3C120400B7S UF3C120400B7S-D.PDF
UF3C120400B7S
Hersteller: onsemi
Description: SICFET N-CH 1200V 7.6A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V
auf Bestellung 39361 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.15 EUR
10+8.98 EUR
100+7.07 EUR
Mindestbestellmenge: 2
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UJ4C075060B7S UJ4C075060B7S-D.PDF
UJ4C075060B7S
Hersteller: onsemi
Description: 750V/60MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
auf Bestellung 10400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+8.23 EUR
Mindestbestellmenge: 800
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UJ4C075060B7S UJ4C075060B7S-D.PDF
UJ4C075060B7S
Hersteller: onsemi
Description: 750V/60MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
auf Bestellung 10678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.21 EUR
10+11.92 EUR
100+10.07 EUR
Mindestbestellmenge: 2
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UF3C120150B7S UF3C120150B7S-D.PDF
UF3C120150B7S
Hersteller: onsemi
Description: 1200V/150MOHM, SIC, FAST CASCODE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 25.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
auf Bestellung 136800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+8.38 EUR
Mindestbestellmenge: 800
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UF3C120150B7S UF3C120150B7S-D.PDF
UF3C120150B7S
Hersteller: onsemi
Description: 1200V/150MOHM, SIC, FAST CASCODE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 25.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
auf Bestellung 137995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.46 EUR
10+12.1 EUR
100+10.26 EUR
Mindestbestellmenge: 2
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UF3C065080B7S UF3C065080B7S-D.PDF
UF3C065080B7S
Hersteller: onsemi
Description: SICFET N-CH 650V 27A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 136.4W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 100 V
auf Bestellung 14400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+9.06 EUR
Mindestbestellmenge: 800
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UF3C065080B7S UF3C065080B7S-D.PDF
UF3C065080B7S
Hersteller: onsemi
Description: SICFET N-CH 650V 27A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 136.4W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 100 V
auf Bestellung 15461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.53 EUR
10+12.9 EUR
100+11.09 EUR
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UJ4C075033B7S UJ4C075033B7S-D.PDF
UJ4C075033B7S
Hersteller: onsemi
Description: 750V/33MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+12.29 EUR
Mindestbestellmenge: 800
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UJ4C075033B7S UJ4C075033B7S-D.PDF
UJ4C075033B7S
Hersteller: onsemi
Description: 750V/33MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 3415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.44 EUR
10+16.53 EUR
100+15.05 EUR
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UF3C120080B7S UF3C120080B7S-D.PDF
UF3C120080B7S
Hersteller: onsemi
Description: SICFET N-CH 1200V 28.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+14.97 EUR
Mindestbestellmenge: 800
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UF3C120080B7S UF3C120080B7S-D.PDF
UF3C120080B7S
Hersteller: onsemi
Description: SICFET N-CH 1200V 28.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
auf Bestellung 5471 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.32 EUR
10+19.44 EUR
100+18.33 EUR
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UF3SC065030B7S da008647
UF3SC065030B7S
Hersteller: onsemi
Description: 650V/30MOHM, SIC, STACKED FAST C
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+18.89 EUR
Mindestbestellmenge: 800
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UF3SC065030B7S da008647
UF3SC065030B7S
Hersteller: onsemi
Description: 650V/30MOHM, SIC, STACKED FAST C
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 2624 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.23 EUR
25+24.53 EUR
100+21.17 EUR
250+19.49 EUR
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UJ4SC075011B7S UJ4SC075011B7S-D.PDF
UJ4SC075011B7S
Hersteller: onsemi
Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+28.79 EUR
Mindestbestellmenge: 800
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UJ4SC075011B7S UJ4SC075011B7S-D.PDF
UJ4SC075011B7S
Hersteller: onsemi
Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
auf Bestellung 3860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+45.69 EUR
10+35.24 EUR
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NTH4L013N120M3S nth4l013n120m3s-d.pdf
NTH4L013N120M3S
Hersteller: onsemi
Description: DISCRETE SIC M3S 1200V 13MOHM
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 151A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 75A, 18V
Power Dissipation (Max): 682W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 37mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5813 pF @ 800 V
auf Bestellung 385 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+49.14 EUR
10+39.93 EUR
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MOC8102 CNY17x, CNY17Fx, MOC810x.pdf
MOC8102
Hersteller: onsemi
Description: OPTOISOLATOR 5.3KV TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 73% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 117% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 1µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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MC100E137FN mc10e137-d.pdf
MC100E137FN
Hersteller: onsemi
Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.5 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
auf Bestellung 1909 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
76+6.7 EUR
Mindestbestellmenge: 76
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MC10E137FNR2G mc10e137-d.pdf
MC10E137FNR2G
Hersteller: onsemi
Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.7 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
auf Bestellung 6681 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
47+10.86 EUR
Mindestbestellmenge: 47
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MC100E137FNR2G mc10e137-d.pdf
MC100E137FNR2G
Hersteller: onsemi
Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.5 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
47+10.86 EUR
Mindestbestellmenge: 47
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MC10E137FNG mc10e137-d.pdf
MC10E137FNG
Hersteller: onsemi
Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.7 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
auf Bestellung 3215 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+14.76 EUR
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SN74LS367ADR2 MOTOD030-5-322.pdf?t.download=true&u=5oefqw
SN74LS367ADR2
Hersteller: onsemi
Description: BUFFER/LINE DRIVER 6-CH
Packaging: Bulk
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1397+0.32 EUR
Mindestbestellmenge: 1397
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MCT6 MCT62-D.pdf
MCT6
Hersteller: onsemi
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 21427 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
50+0.76 EUR
100+0.7 EUR
500+0.59 EUR
1000+0.55 EUR
2000+0.52 EUR
5000+0.49 EUR
10000+0.47 EUR
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UF3SC120016K3S UF3SC120016K3S-D.PDF
UF3SC120016K3S
Hersteller: onsemi
Description: SICFET N-CH 1200V 107A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V
auf Bestellung 2828 Stücke:
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Anzahl Preis
1+85.8 EUR
30+62.89 EUR
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UF3SC120016K4S UF3SC120016K4S-D.PDF
UF3SC120016K4S
Hersteller: onsemi
Description: SICFET N-CH 1200V 107A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V
auf Bestellung 2783 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+85.32 EUR
30+76.18 EUR
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DFD05TL-BT SNYOD003-89.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: DFD05 - RECTIFIER DIODE, 0.5A, 8
Packaging: Bulk
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11539+0.051 EUR
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NLV74HC04ADR2G mc74hc04a-d.pdf
NLV74HC04ADR2G
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
auf Bestellung 75965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1066+0.47 EUR
Mindestbestellmenge: 1066
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BSP50 description FAIRS43277-1.pdf?t.download=true&u=5oefqw
BSP50
Hersteller: onsemi
Description: TRANS NPN DARL 45V 0.8A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1750+0.29 EUR
Mindestbestellmenge: 1750
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MBR2080CT MBR20%2880%2C90%2C100%29CT.pdf
MBR2080CT
Hersteller: onsemi
Description: DIODE ARRAY SCHOT 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
Produkt ist nicht verfügbar
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3MN03SF-TL-E 3MN03SF-TL-E.pdf?t.download=true&u=axiww2
3MN03SF-TL-E
Hersteller: onsemi
Description: RF TRANS NPN 20V 320MHZ 3-SSFP
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Power - Max: 150mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V
Frequency - Transition: 320MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: 3-SSFP
auf Bestellung 192000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6662+0.084 EUR
Mindestbestellmenge: 6662
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MMSD485B FAIRS45395-1.pdf?t.download=true&u=5oefqw
MMSD485B
Hersteller: onsemi
Description: DIODE STANDARD SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3620+0.12 EUR
Mindestbestellmenge: 3620
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SZESD5Z5.0T1G esd5z2.5t1-d.pdf
SZESD5Z5.0T1G
Hersteller: onsemi
Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 240W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
39+0.45 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 25
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NCS2554DTBR2G ncs2554-d.pdf
NCS2554DTBR2G
Hersteller: onsemi
Description: IC AMP REC FILTR 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Applications: Reconstruction Filter
Voltage - Supply, Single/Dual (±): 4.7V ~ 5.3V
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Supply: 40 mA
Current - Output / Channel: 40 mA
-3db Bandwidth: 8 MHz
auf Bestellung 11275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
952+0.54 EUR
Mindestbestellmenge: 952
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CM1457-04CP cm1457-d.pdf
Hersteller: onsemi
Description: FILTR LC(PI) 70NH/12.5PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA, WLCSP
Size / Dimension: 0.066" L x 0.041" W (1.67mm x 1.05mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 70nH (Total), C = 12.5pF (Total)
Height: 0.027" (0.69mm)
Attenuation Value: -35dB @ 800MHz ~ 2.7GHz
Filter Order: 5th
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 300MHz (Cutoff)
Resistance - Channel (Ohms): 45
ESD Protection: Yes
Number of Channels: 4
Current: 15 mA
Produkt ist nicht verfügbar
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CM1457-04CP cm1457-d.pdf
Hersteller: onsemi
Description: FILTR LC(PI) 70NH/12.5PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 10-WFBGA, WLCSP
Size / Dimension: 0.066" L x 0.041" W (1.67mm x 1.05mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 70nH (Total), C = 12.5pF (Total)
Height: 0.027" (0.69mm)
Attenuation Value: -35dB @ 800MHz ~ 2.7GHz
Filter Order: 5th
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 300MHz (Cutoff)
Resistance - Channel (Ohms): 45
ESD Protection: Yes
Number of Channels: 4
Current: 15 mA
Produkt ist nicht verfügbar
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FFSB1065B ffsb1065b-d.pdf
FFSB1065B
Hersteller: onsemi
Description: DIODE SIL CARBIDE 650V 27A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
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FFSB1065B ffsb1065b-d.pdf
FFSB1065B
Hersteller: onsemi
Description: DIODE SIL CARBIDE 650V 27A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.85 EUR
10+4.5 EUR
100+3.17 EUR
Mindestbestellmenge: 3
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FFSB1065B-F085 ffsb1065b-f085-d.pdf
FFSB1065B-F085
Hersteller: onsemi
Description: DIODE SIL CARBIDE 650V 27A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.68 EUR
Mindestbestellmenge: 800
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FFSB1065B-F085 ffsb1065b-f085-d.pdf
FFSB1065B-F085
Hersteller: onsemi
Description: DIODE SIL CARBIDE 650V 27A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.6 EUR
10+5.01 EUR
100+3.55 EUR
Mindestbestellmenge: 3
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FFSB1065A ffsb1065a-d.pdf
FFSB1065A
Hersteller: onsemi
Description: DIODE SIL CARBIDE 650V 14A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+3.2 EUR
Mindestbestellmenge: 800
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FFSB1065A ffsb1065a-d.pdf
FFSB1065A
Hersteller: onsemi
Description: DIODE SIL CARBIDE 650V 14A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.66 EUR
10+5.75 EUR
100+4.11 EUR
Mindestbestellmenge: 3
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TIP32A tip31a-d.pdf
TIP32A
Hersteller: onsemi
Description: TRANS PNP 60V 3A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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PCGLA200T75NF8 PCGLA200T75NF8-D.PDF
Hersteller: onsemi
Description: IGBT TRENCH FS 750V 200A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 200A
Supplier Device Package: Wafer
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 257ns/247.5ns
Test Condition: 400V, 200A, 2Ohm, 15V
Gate Charge: 718 nC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NCV6324CMTAAWTBG ncp6324-d.pdf
NCV6324CMTAAWTBG
Hersteller: onsemi
Description: IC REG BUCK ADJ 2A 8WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 8-WDFNW (2x2)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.89 EUR
6000+0.84 EUR
Mindestbestellmenge: 3000
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NCV6324CMTAAWTBG ncp6324-d.pdf
NCV6324CMTAAWTBG
Hersteller: onsemi
Description: IC REG BUCK ADJ 2A 8WDFNW
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 8-WDFNW (2x2)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 20495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+2.13 EUR
25+1.79 EUR
100+1.41 EUR
250+1.22 EUR
500+1.1 EUR
1000+1.01 EUR
Mindestbestellmenge: 6
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50C02MH-TL-E 50c02mh-d.pdf
50C02MH-TL-E
Hersteller: onsemi
Description: TRANS NPN 50V 0.5A 3-MCPH
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 500MHz
Supplier Device Package: 3-MCPH
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 600 mW
auf Bestellung 178450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3109+0.17 EUR
Mindestbestellmenge: 3109
Im Einkaufswagen  Stück im Wert von  UAH
SPS1M001A-03
Hersteller: onsemi
Description: RFID TAG R/W 902-928MHZ INLAY
Packaging: Tape & Reel (TR)
Size / Dimension: 6.469" L x 0.787" W (165.00mm x 20.00mm)
Style: Inlay
Frequency: 902MHz ~ 928MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 18000-6, EPC
Writable Memory: 128b (EPC)
auf Bestellung 94765 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
60+15.75 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
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