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CS8191XDWF20 CS8191XDWF20 onsemi Description: PRECISION AIR-CORE TACH/SPEEDO M
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Type: Sensor Interface
Operating Temperature: -40°C ~ 105°C (TA)
Input Type: Differential
Supplier Device Package: 20-SOIC
Current - Supply: 125 mA
Produkt ist nicht verfügbar
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CAT93C46BWI-GT3 CAT93C46BWI-GT3 onsemi CAT93C46B-D.PDF Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
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3000+0.54 EUR
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CAT93C46BWI-GT3 CAT93C46BWI-GT3 onsemi CAT93C46B-D.PDF Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
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27+0.77 EUR
50+0.76 EUR
100+0.75 EUR
250+0.73 EUR
500+0.7 EUR
1000+0.69 EUR
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CAT93C86BVE-GT3 CAT93C86BVE-GT3 onsemi cat93c86b-d.pdf Description: 16-KB MICROWIRE SERIAL EEPROM
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Memory Interface: Microwire
Access Time: 100 ns
Memory Organization: 1K x 16, 2K x 8
auf Bestellung 15000 Stücke:
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3000+0.63 EUR
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CAT93C86BVE-GT3 CAT93C86BVE-GT3 onsemi cat93c86b-d.pdf Description: 16-KB MICROWIRE SERIAL EEPROM
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Memory Interface: Microwire
Access Time: 100 ns
Memory Organization: 1K x 16, 2K x 8
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21+1 EUR
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500+0.84 EUR
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QTLP650CBTR onsemi QTLP650Cx.pdf Description: LED BLUE CLEAR 1206 SMD
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Color: Blue
Size / Dimension: 3.20mm L x 1.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 20mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3.8V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 140°
Height (Max): 1.30mm
Wavelength - Peak: 430nm
Wavelength - Dominant: 465nm
Supplier Device Package: 1206
Lens Transparency: Clear
Lens Style: Rectangle with Flat Top
Lens Size: 2.00mm x 1.60mm
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QTLP651C4TR onsemi QTLP651CxTR.pdf Description: LED GREEN CLEAR 1206 SMD
Lens Size: 1.10mm Dia
Lens Style: Round with Flat Top
Lens Transparency: Clear
Supplier Device Package: 1206
Wavelength - Dominant: 570nm
Wavelength - Peak: 565nm
Height (Max): 1.50mm
Viewing Angle: 20°
Current - Test: 10mA
Lens Color: Colorless
Voltage - Forward (Vf) (Typ): 2.1V
Configuration: Standard
Millicandela Rating: 35mcd
Mounting Type: Surface Mount
Size / Dimension: 3.00mm L x 1.50mm W
Color: Green
Package / Case: 1206 (3216 Metric)
Packaging: Tape & Reel (TR)
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QTLP651C7TR onsemi QTLP651CxTR.pdf Description: LED RED CLEAR 1206 SMD
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Color: Red
Size / Dimension: 3.00mm L x 1.50mm W
Mounting Type: Surface Mount
Millicandela Rating: 50mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Colorless
Current - Test: 10mA
Viewing Angle: 20°
Height (Max): 1.50mm
Wavelength - Peak: 660nm
Wavelength - Dominant: 645nm
Supplier Device Package: 1206
Lens Transparency: Clear
Lens Style: Round with Flat Top
Lens Size: 1.10mm Dia
Produkt ist nicht verfügbar
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QTLP651CRTR onsemi QTLP651C-R%2CE%2CO%2CY%2CAG%2CIG%2CIB.pdf Description: LED RED CLEAR 1206 SMD
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Color: Red
Size / Dimension: 3.00mm L x 1.50mm W
Mounting Type: Surface Mount
Millicandela Rating: 70mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 20°
Height (Max): 1.50mm
Wavelength - Peak: 630nm
Wavelength - Dominant: 624nm
Supplier Device Package: 1206
Lens Transparency: Clear
Lens Style: Round with Flat Top
Lens Size: 1.10mm Dia
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QTLP651CYTR onsemi QTLP651C-R%2CE%2CO%2CY%2CAG%2CIG%2CIB.pdf Description: LED YELLOW CLEAR 1206 SMD
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Color: Yellow
Size / Dimension: 3.00mm L x 1.50mm W
Mounting Type: Surface Mount
Millicandela Rating: 70mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 20°
Height (Max): 1.50mm
Wavelength - Peak: 590nm
Wavelength - Dominant: 589nm
Supplier Device Package: 1206
Lens Transparency: Clear
Lens Style: Round with Flat Top
Lens Size: 1.10mm Dia
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AR0246NPSC32SMKA1-CR AR0246NPSC32SMKA1-CR onsemi AR0246-D.PDF Description: IMAGE SENSOR, 2.0 MP, ROLLING SH
Packaging: Tray
Package / Case: 53-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.7V ~ 2.9V
Pixel Size: 2µm x 2µm
Active Pixel Array: 1920H x 1080V
Supplier Device Package: 53-ODCSP (5.31x3.61)
Frames per Second: 60.0
auf Bestellung 2980 Stücke:
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1+37.43 EUR
5+34.14 EUR
10+32.93 EUR
25+31.46 EUR
50+30.46 EUR
100+29.55 EUR
500+27.7 EUR
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AR0246NPSC10SMKA1-CR AR0246NPSC10SMKA1-CR onsemi AR0246-D.PDF Description: IMAGE SENSOR, 2.0 MP, ROLLING SH
Packaging: Tray
Package / Case: 53-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.7V ~ 2.9V
Pixel Size: 2µm x 2µm
Active Pixel Array: 1920H x 1080V
Supplier Device Package: 53-ODCSP (5.31x3.61)
Frames per Second: 60.0
auf Bestellung 5992 Stücke:
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5+34.14 EUR
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25+31.46 EUR
50+30.46 EUR
100+29.55 EUR
500+27.7 EUR
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MC100EP35DTR2G MC100EP35DTR2G onsemi Description: IC FF JK TYPE SGL 1-BIT 8-TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Number of Elements: 1
Function: Reset
Type: JK Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 50 mA
Trigger Type: Positive Edge
Clock Frequency: 3 GHz
Supplier Device Package: 8-TSSOP
Number of Bits per Element: 1
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NCP134AMX090TCG NCP134AMX090TCG onsemi ncp134-d.pdf Description: IC REG LINEAR 0.9V 500MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 80dB ~ 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
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NCP134AMX090TCG NCP134AMX090TCG onsemi ncp134-d.pdf Description: IC REG LINEAR 0.9V 500MA 4-XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 80dB ~ 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 513 Stücke:
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29+0.74 EUR
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47+0.45 EUR
100+0.39 EUR
250+0.36 EUR
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NTMT125N60S5H onsemi NTMT125N60S5H-D.PDF Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 152W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.1mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2037 pF @ 400 V
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NTBL125N60S5H onsemi NTBL125N60S5H-D.PDF Description: MOSFET - POWER,NCHANNEL, SUPERFE
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 152W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.1mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2036 pF @ 400 V
Produkt ist nicht verfügbar
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MC74HC132ADR2G-Q MC74HC132ADR2G-Q onsemi mc74hc132a-d.pdf Description: QUAD 2-INPUT NAND GATE WITH SCHM
Features: Schmitt Trigger Input
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.9V ~ 2.6V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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MC74HC132ADR2G-Q MC74HC132ADR2G-Q onsemi mc74hc132a-d.pdf Description: QUAD 2-INPUT NAND GATE WITH SCHM
Features: Schmitt Trigger Input
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.9V ~ 2.6V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 2478 Stücke:
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40+0.54 EUR
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MC74HC132ADTR2G-Q MC74HC132ADTR2G-Q onsemi mc74hc132a-d.pdf Description: QUAD 2-INPUT NAND GATE WITH SCHM
Features: Schmitt Trigger Input
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.9V ~ 2.6V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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MC74HC132ADTR2G-Q MC74HC132ADTR2G-Q onsemi mc74hc132a-d.pdf Description: QUAD 2-INPUT NAND GATE WITH SCHM
Features: Schmitt Trigger Input
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.9V ~ 2.6V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 2150 Stücke:
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250+0.48 EUR
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FDMS8888 FDMS8888 onsemi fdms8888-d.pdf Description: MOSFET N-CH 30V 13.5A/21A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
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FQA13N80 FQA13N80 onsemi FQA13N80.pdf Description: MOSFET N-CH 800V 12.6A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FAN7601N FAN7601N onsemi FAN7601.pdf description Description: IC OFFLINE SWITCH FLYBACK 8DIP
Control Features: Frequency Control, Soft Start
Voltage - Start Up: 12 V
Fault Protection: Over Temperature, Over Voltage
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Internal Switch(s): Yes
Frequency - Switching: Up to 300kHz
Duty Cycle: 95%
Operating Temperature: -25°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7601BN FAN7601BN onsemi fan7601b-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Control Features: Frequency Control, Soft Start
Voltage - Start Up: 12 V
Fault Protection: Over Temperature, Over Voltage
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Internal Switch(s): Yes
Frequency - Switching: 300kHz
Duty Cycle: 95%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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BZX55C15 BZX55C15 onsemi BZX55C2V4%20-%20BZX55C56.pdf Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
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NTBG060N090SC1 NTBG060N090SC1 onsemi ntbg060n090sc1-d.pdf Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +19V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
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800+12.79 EUR
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NTBG060N090SC1 NTBG060N090SC1 onsemi ntbg060n090sc1-d.pdf Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +19V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V
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NVH4L020N090SC1 NVH4L020N090SC1 onsemi nvh4l020n090sc1-d.pdf Description: SIC MOSFET 900V TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 484W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
Qualification: AEC-Q101
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NVBG060N090SC1 NVBG060N090SC1 onsemi NVBG060N090SC1-D.PDF Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Qualification: AEC-Q101
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NVBG060N090SC1 NVBG060N090SC1 onsemi NVBG060N090SC1-D.PDF Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Qualification: AEC-Q101
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FQD5N50CTM FQD5N50CTM onsemi FQD5N50C%2C%20FQU5N50C.pdf Description: MOSFET N-CH 500V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
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MMBZ5241BLT1 MMBZ5241BLT1 onsemi mmbz5221blt1-d.pdf Description: DIODE ZENER 11V 225MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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MMBZ5241B MMBZ5241B onsemi FAIR-S-A0002364146-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 11V 300MW SOT23
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
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MMBZ5241B MMBZ5241B onsemi MMBZ5221B-5257B.pdf Description: DIODE ZENER 11V 350MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
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MMBZ5241B MMBZ5241B onsemi MMBZ5221B-5257B.pdf Description: DIODE ZENER 11V 350MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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KS3302BU KS3302BU onsemi ks3302bu.pdf?t.download=true&u=axiww2 Description: TRANS NPN 40V 0.2A TO-92-3
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Vce Saturation (Max) @ Ib, Ic: 150mV @ 10mA, 100mA
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
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BZX85C4V3 BZX85C4V3 onsemi BZX85C3V3-C56.pdf Description: DIODE ZENER 4.3V 1W DO41
Tolerance: ±7%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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BZX85C4V3 BZX85C4V3 onsemi BZX85C3V3-C56.pdf Description: DIODE ZENER 4.3V 1W DO41
Tolerance: ±7%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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FSB50450S FSB50450S onsemi fsb50450s-d.pdf Description: MOSFET IPM 500V 1.5A 23-PWRSMD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
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FSB50450S FSB50450S onsemi fsb50450s-d.pdf Description: MOSFET IPM 500V 1.5A 23-PWRSMD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
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NJVMJD253T4G NJVMJD253T4G onsemi mjd243-d.pdf Description: TRANS PNP 100V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Grade: Automotive
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
Qualification: AEC-Q101
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S2J S2J onsemi s2m-d.pdf Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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S2J S2J onsemi s2m-d.pdf Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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500+0.23 EUR
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UJ4SC075009B7S UJ4SC075009B7S onsemi UJ4SC075009B7S-D.PDF Description: 750V/9MOHM, N-OFF SIC STACK CASC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
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UJ4SC075009B7S UJ4SC075009B7S onsemi UJ4SC075009B7S-D.PDF Description: 750V/9MOHM, N-OFF SIC STACK CASC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
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MC74HC20ADR2G-Q MC74HC20ADR2G-Q onsemi mc74hc20a-d.pdf Description: DUAL 4-INPUT NAND GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 4
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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MC74HC20ADR2G-Q MC74HC20ADR2G-Q onsemi mc74hc20a-d.pdf Description: DUAL 4-INPUT NAND GATE
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 4
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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MC74HCT573ADWR2G-Q MC74HCT573ADWR2G-Q onsemi mc74hc573a-d.pdf Description: IC D-TYPE 1:8 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Delay Time - Propagation: 30ns
Supplier Device Package: 20-SOIC
Grade: Automotive
Qualification: AEC-Q100
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MC74HCT573ADWR2G-Q MC74HCT573ADWR2G-Q onsemi mc74hc573a-d.pdf Description: IC D-TYPE 1:8 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Delay Time - Propagation: 30ns
Supplier Device Package: 20-SOIC
Grade: Automotive
Qualification: AEC-Q100
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100+0.79 EUR
250+0.74 EUR
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MC74LVX4052MG MC74LVX4052MG onsemi MC74LVX4052-D.pdf Description: IC SWITCH SP4TX2 26OHM 16SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-SOEIAJ
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Produkt ist nicht verfügbar
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MCR12LMG MCR12LMG onsemi MCR12L-D.PDF Description: SCR 600V 12A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 8 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - On State (It (AV)) (Max): 7.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
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JANTXV2N3700 onsemi 2N3019-D.PDF Description: TRANS NPN 80V 1A TO-18-3
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18-3
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500
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JAN2N3700 onsemi 2N3019-D.PDF Description: TRANS NPN 80V 1A TO-18-3
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18-3
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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TIP117 TIP117 onsemi tip110-d.pdf Description: TRANS PNP DARL 100V 2A TO-220
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Produkt ist nicht verfügbar
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MC74LVXT4052DTR2G MC74LVXT4052DTR2G onsemi PdfFile_146224.pdf Description: IC SWITCH SP4T X 2 26OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
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MC74LVXT4052DTR2G MC74LVXT4052DTR2G onsemi PdfFile_146224.pdf Description: IC SWITCH SP4T X 2 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
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CNW11AV2300 CNW11AV2300 onsemi CNW11AV-1%2C2%2C3.pdf Description: OPTOISO 4KV TRANS W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 4000Vrms
Current Transfer Ratio (Min): 50% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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FGL35N120FTDTU FGL35N120FTDTU onsemi fgl35n120ftd-d.pdf Description: IGBT TRENCH FS 1200V 70A TO-264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
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FGL35N120FTDTU FGL35N120FTDTU onsemi fgl35n120ftd-d.pdf Description: IGBT TRENCH FS 1200V 70A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
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CS8191XDWF20
CS8191XDWF20
Hersteller: onsemi
Description: PRECISION AIR-CORE TACH/SPEEDO M
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Type: Sensor Interface
Operating Temperature: -40°C ~ 105°C (TA)
Input Type: Differential
Supplier Device Package: 20-SOIC
Current - Supply: 125 mA
Produkt ist nicht verfügbar
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CAT93C46BWI-GT3 CAT93C46B-D.PDF
CAT93C46BWI-GT3
Hersteller: onsemi
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
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CAT93C46BWI-GT3 CAT93C46B-D.PDF
CAT93C46BWI-GT3
Hersteller: onsemi
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
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CAT93C86BVE-GT3 cat93c86b-d.pdf
CAT93C86BVE-GT3
Hersteller: onsemi
Description: 16-KB MICROWIRE SERIAL EEPROM
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Memory Interface: Microwire
Access Time: 100 ns
Memory Organization: 1K x 16, 2K x 8
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CAT93C86BVE-GT3 cat93c86b-d.pdf
CAT93C86BVE-GT3
Hersteller: onsemi
Description: 16-KB MICROWIRE SERIAL EEPROM
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Memory Interface: Microwire
Access Time: 100 ns
Memory Organization: 1K x 16, 2K x 8
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QTLP650CBTR QTLP650Cx.pdf
Hersteller: onsemi
Description: LED BLUE CLEAR 1206 SMD
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Color: Blue
Size / Dimension: 3.20mm L x 1.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 20mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3.8V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 140°
Height (Max): 1.30mm
Wavelength - Peak: 430nm
Wavelength - Dominant: 465nm
Supplier Device Package: 1206
Lens Transparency: Clear
Lens Style: Rectangle with Flat Top
Lens Size: 2.00mm x 1.60mm
Produkt ist nicht verfügbar
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QTLP651C4TR QTLP651CxTR.pdf
Hersteller: onsemi
Description: LED GREEN CLEAR 1206 SMD
Lens Size: 1.10mm Dia
Lens Style: Round with Flat Top
Lens Transparency: Clear
Supplier Device Package: 1206
Wavelength - Dominant: 570nm
Wavelength - Peak: 565nm
Height (Max): 1.50mm
Viewing Angle: 20°
Current - Test: 10mA
Lens Color: Colorless
Voltage - Forward (Vf) (Typ): 2.1V
Configuration: Standard
Millicandela Rating: 35mcd
Mounting Type: Surface Mount
Size / Dimension: 3.00mm L x 1.50mm W
Color: Green
Package / Case: 1206 (3216 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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QTLP651C7TR QTLP651CxTR.pdf
Hersteller: onsemi
Description: LED RED CLEAR 1206 SMD
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Color: Red
Size / Dimension: 3.00mm L x 1.50mm W
Mounting Type: Surface Mount
Millicandela Rating: 50mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Colorless
Current - Test: 10mA
Viewing Angle: 20°
Height (Max): 1.50mm
Wavelength - Peak: 660nm
Wavelength - Dominant: 645nm
Supplier Device Package: 1206
Lens Transparency: Clear
Lens Style: Round with Flat Top
Lens Size: 1.10mm Dia
Produkt ist nicht verfügbar
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QTLP651CRTR QTLP651C-R%2CE%2CO%2CY%2CAG%2CIG%2CIB.pdf
Hersteller: onsemi
Description: LED RED CLEAR 1206 SMD
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Color: Red
Size / Dimension: 3.00mm L x 1.50mm W
Mounting Type: Surface Mount
Millicandela Rating: 70mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 20°
Height (Max): 1.50mm
Wavelength - Peak: 630nm
Wavelength - Dominant: 624nm
Supplier Device Package: 1206
Lens Transparency: Clear
Lens Style: Round with Flat Top
Lens Size: 1.10mm Dia
Produkt ist nicht verfügbar
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QTLP651CYTR QTLP651C-R%2CE%2CO%2CY%2CAG%2CIG%2CIB.pdf
Hersteller: onsemi
Description: LED YELLOW CLEAR 1206 SMD
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Color: Yellow
Size / Dimension: 3.00mm L x 1.50mm W
Mounting Type: Surface Mount
Millicandela Rating: 70mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 20°
Height (Max): 1.50mm
Wavelength - Peak: 590nm
Wavelength - Dominant: 589nm
Supplier Device Package: 1206
Lens Transparency: Clear
Lens Style: Round with Flat Top
Lens Size: 1.10mm Dia
Produkt ist nicht verfügbar
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AR0246NPSC32SMKA1-CR AR0246-D.PDF
AR0246NPSC32SMKA1-CR
Hersteller: onsemi
Description: IMAGE SENSOR, 2.0 MP, ROLLING SH
Packaging: Tray
Package / Case: 53-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.7V ~ 2.9V
Pixel Size: 2µm x 2µm
Active Pixel Array: 1920H x 1080V
Supplier Device Package: 53-ODCSP (5.31x3.61)
Frames per Second: 60.0
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AR0246NPSC10SMKA1-CR AR0246-D.PDF
AR0246NPSC10SMKA1-CR
Hersteller: onsemi
Description: IMAGE SENSOR, 2.0 MP, ROLLING SH
Packaging: Tray
Package / Case: 53-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.7V ~ 2.9V
Pixel Size: 2µm x 2µm
Active Pixel Array: 1920H x 1080V
Supplier Device Package: 53-ODCSP (5.31x3.61)
Frames per Second: 60.0
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MC100EP35DTR2G
MC100EP35DTR2G
Hersteller: onsemi
Description: IC FF JK TYPE SGL 1-BIT 8-TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Number of Elements: 1
Function: Reset
Type: JK Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 50 mA
Trigger Type: Positive Edge
Clock Frequency: 3 GHz
Supplier Device Package: 8-TSSOP
Number of Bits per Element: 1
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NCP134AMX090TCG ncp134-d.pdf
NCP134AMX090TCG
Hersteller: onsemi
Description: IC REG LINEAR 0.9V 500MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 80dB ~ 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
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NCP134AMX090TCG ncp134-d.pdf
NCP134AMX090TCG
Hersteller: onsemi
Description: IC REG LINEAR 0.9V 500MA 4-XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 80dB ~ 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
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NTMT125N60S5H NTMT125N60S5H-D.PDF
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 152W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.1mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2037 pF @ 400 V
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NTBL125N60S5H NTBL125N60S5H-D.PDF
Hersteller: onsemi
Description: MOSFET - POWER,NCHANNEL, SUPERFE
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 152W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.1mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2036 pF @ 400 V
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MC74HC132ADR2G-Q mc74hc132a-d.pdf
MC74HC132ADR2G-Q
Hersteller: onsemi
Description: QUAD 2-INPUT NAND GATE WITH SCHM
Features: Schmitt Trigger Input
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.9V ~ 2.6V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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MC74HC132ADR2G-Q mc74hc132a-d.pdf
MC74HC132ADR2G-Q
Hersteller: onsemi
Description: QUAD 2-INPUT NAND GATE WITH SCHM
Features: Schmitt Trigger Input
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.9V ~ 2.6V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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MC74HC132ADTR2G-Q mc74hc132a-d.pdf
MC74HC132ADTR2G-Q
Hersteller: onsemi
Description: QUAD 2-INPUT NAND GATE WITH SCHM
Features: Schmitt Trigger Input
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.9V ~ 2.6V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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MC74HC132ADTR2G-Q mc74hc132a-d.pdf
MC74HC132ADTR2G-Q
Hersteller: onsemi
Description: QUAD 2-INPUT NAND GATE WITH SCHM
Features: Schmitt Trigger Input
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.9V ~ 2.6V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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23+0.94 EUR
32+0.67 EUR
36+0.6 EUR
100+0.51 EUR
250+0.48 EUR
500+0.45 EUR
1000+0.44 EUR
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FDMS8888 fdms8888-d.pdf
FDMS8888
Hersteller: onsemi
Description: MOSFET N-CH 30V 13.5A/21A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
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FQA13N80 FQA13N80.pdf
FQA13N80
Hersteller: onsemi
Description: MOSFET N-CH 800V 12.6A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FAN7601N description FAN7601.pdf
FAN7601N
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Control Features: Frequency Control, Soft Start
Voltage - Start Up: 12 V
Fault Protection: Over Temperature, Over Voltage
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Internal Switch(s): Yes
Frequency - Switching: Up to 300kHz
Duty Cycle: 95%
Operating Temperature: -25°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7601BN fan7601b-d.pdf
FAN7601BN
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Control Features: Frequency Control, Soft Start
Voltage - Start Up: 12 V
Fault Protection: Over Temperature, Over Voltage
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Internal Switch(s): Yes
Frequency - Switching: 300kHz
Duty Cycle: 95%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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BZX55C15 BZX55C2V4%20-%20BZX55C56.pdf
BZX55C15
Hersteller: onsemi
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Produkt ist nicht verfügbar
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NTBG060N090SC1 ntbg060n090sc1-d.pdf
NTBG060N090SC1
Hersteller: onsemi
Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +19V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
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800+12.79 EUR
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NTBG060N090SC1 ntbg060n090sc1-d.pdf
NTBG060N090SC1
Hersteller: onsemi
Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +19V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V
auf Bestellung 895 Stücke:
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1+27 EUR
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NVH4L020N090SC1 nvh4l020n090sc1-d.pdf
NVH4L020N090SC1
Hersteller: onsemi
Description: SIC MOSFET 900V TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 484W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
Qualification: AEC-Q101
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NVBG060N090SC1 NVBG060N090SC1-D.PDF
NVBG060N090SC1
Hersteller: onsemi
Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Qualification: AEC-Q101
auf Bestellung 307200 Stücke:
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800+17.55 EUR
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NVBG060N090SC1 NVBG060N090SC1-D.PDF
NVBG060N090SC1
Hersteller: onsemi
Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Qualification: AEC-Q101
auf Bestellung 307671 Stücke:
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1+31.99 EUR
10+22.76 EUR
100+21.49 EUR
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FQD5N50CTM FQD5N50C%2C%20FQU5N50C.pdf
FQD5N50CTM
Hersteller: onsemi
Description: MOSFET N-CH 500V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Produkt ist nicht verfügbar
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MMBZ5241BLT1 mmbz5221blt1-d.pdf
MMBZ5241BLT1
Hersteller: onsemi
Description: DIODE ZENER 11V 225MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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MMBZ5241B FAIR-S-A0002364146-1.pdf?t.download=true&u=5oefqw
MMBZ5241B
Hersteller: onsemi
Description: DIODE ZENER 11V 300MW SOT23
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
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9458+0.054 EUR
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MMBZ5241B MMBZ5221B-5257B.pdf
MMBZ5241B
Hersteller: onsemi
Description: DIODE ZENER 11V 350MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
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MMBZ5241B MMBZ5221B-5257B.pdf
MMBZ5241B
Hersteller: onsemi
Description: DIODE ZENER 11V 350MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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KS3302BU ks3302bu.pdf?t.download=true&u=axiww2
KS3302BU
Hersteller: onsemi
Description: TRANS NPN 40V 0.2A TO-92-3
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Vce Saturation (Max) @ Ib, Ic: 150mV @ 10mA, 100mA
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar
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BZX85C4V3 BZX85C3V3-C56.pdf
BZX85C4V3
Hersteller: onsemi
Description: DIODE ZENER 4.3V 1W DO41
Tolerance: ±7%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
auf Bestellung 27370 Stücke:
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BZX85C4V3 BZX85C3V3-C56.pdf
BZX85C4V3
Hersteller: onsemi
Description: DIODE ZENER 4.3V 1W DO41
Tolerance: ±7%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Produkt ist nicht verfügbar
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FSB50450S fsb50450s-d.pdf
FSB50450S
Hersteller: onsemi
Description: MOSFET IPM 500V 1.5A 23-PWRSMD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
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FSB50450S fsb50450s-d.pdf
FSB50450S
Hersteller: onsemi
Description: MOSFET IPM 500V 1.5A 23-PWRSMD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
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NJVMJD253T4G mjd243-d.pdf
NJVMJD253T4G
Hersteller: onsemi
Description: TRANS PNP 100V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Grade: Automotive
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
Qualification: AEC-Q101
auf Bestellung 2465 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
14+1.54 EUR
100+1.01 EUR
500+0.79 EUR
1000+0.71 EUR
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S2J s2m-d.pdf
S2J
Hersteller: onsemi
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 108000 Stücke:
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AnzahlPrivatkunde
3000+0.13 EUR
75000+0.12 EUR
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S2J s2m-d.pdf
S2J
Hersteller: onsemi
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 109695 Stücke:
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AnzahlPrivatkunde
40+0.52 EUR
66+0.32 EUR
100+0.29 EUR
500+0.23 EUR
1000+0.2 EUR
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UJ4SC075009B7S UJ4SC075009B7S-D.PDF
UJ4SC075009B7S
Hersteller: onsemi
Description: 750V/9MOHM, N-OFF SIC STACK CASC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
Produkt ist nicht verfügbar
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UJ4SC075009B7S UJ4SC075009B7S-D.PDF
UJ4SC075009B7S
Hersteller: onsemi
Description: 750V/9MOHM, N-OFF SIC STACK CASC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
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MC74HC20ADR2G-Q mc74hc20a-d.pdf
MC74HC20ADR2G-Q
Hersteller: onsemi
Description: DUAL 4-INPUT NAND GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 4
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MC74HC20ADR2G-Q mc74hc20a-d.pdf
MC74HC20ADR2G-Q
Hersteller: onsemi
Description: DUAL 4-INPUT NAND GATE
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 4
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MC74HCT573ADWR2G-Q mc74hc573a-d.pdf
MC74HCT573ADWR2G-Q
Hersteller: onsemi
Description: IC D-TYPE 1:8 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Delay Time - Propagation: 30ns
Supplier Device Package: 20-SOIC
Grade: Automotive
Qualification: AEC-Q100
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1000+0.68 EUR
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MC74HCT573ADWR2G-Q mc74hc573a-d.pdf
MC74HCT573ADWR2G-Q
Hersteller: onsemi
Description: IC D-TYPE 1:8 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Delay Time - Propagation: 30ns
Supplier Device Package: 20-SOIC
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 43000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.4 EUR
21+1 EUR
25+0.9 EUR
100+0.79 EUR
250+0.74 EUR
500+0.7 EUR
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MC74LVX4052MG MC74LVX4052-D.pdf
MC74LVX4052MG
Hersteller: onsemi
Description: IC SWITCH SP4TX2 26OHM 16SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-SOEIAJ
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Produkt ist nicht verfügbar
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MCR12LMG MCR12L-D.PDF
MCR12LMG
Hersteller: onsemi
Description: SCR 600V 12A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 8 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - On State (It (AV)) (Max): 7.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
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AnzahlPrivatkunde
284+1.95 EUR
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JANTXV2N3700 2N3019-D.PDF
Hersteller: onsemi
Description: TRANS NPN 80V 1A TO-18-3
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18-3
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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JAN2N3700 2N3019-D.PDF
Hersteller: onsemi
Description: TRANS NPN 80V 1A TO-18-3
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18-3
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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TIP117 tip110-d.pdf
TIP117
Hersteller: onsemi
Description: TRANS PNP DARL 100V 2A TO-220
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Produkt ist nicht verfügbar
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MC74LVXT4052DTR2G PdfFile_146224.pdf
MC74LVXT4052DTR2G
Hersteller: onsemi
Description: IC SWITCH SP4T X 2 26OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
2500+0.29 EUR
5000+0.27 EUR
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MC74LVXT4052DTR2G PdfFile_146224.pdf
MC74LVXT4052DTR2G
Hersteller: onsemi
Description: IC SWITCH SP4T X 2 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
auf Bestellung 5016 Stücke:
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AnzahlPrivatkunde
33+0.65 EUR
48+0.44 EUR
53+0.39 EUR
100+0.35 EUR
250+0.32 EUR
500+0.3 EUR
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CNW11AV2300 CNW11AV-1%2C2%2C3.pdf
CNW11AV2300
Hersteller: onsemi
Description: OPTOISO 4KV TRANS W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 4000Vrms
Current Transfer Ratio (Min): 50% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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FGL35N120FTDTU fgl35n120ftd-d.pdf
FGL35N120FTDTU
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 70A TO-264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
auf Bestellung 1501 Stücke:
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AnzahlPrivatkunde
53+10.23 EUR
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FGL35N120FTDTU fgl35n120ftd-d.pdf
FGL35N120FTDTU
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 70A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
Produkt ist nicht verfügbar
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