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NSVBCP5316MTWG NSVBCP5316MTWG onsemi bcp53m-d.pdf Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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15+1.21 EUR
24+0.76 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.34 EUR
3000+0.29 EUR
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BCP5316MTWG BCP5316MTWG onsemi bcp53m-d.pdf Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
auf Bestellung 3000 Stücke:
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15+1.21 EUR
24+0.76 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.34 EUR
3000+0.29 EUR
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1N4006G 1N4006G onsemi 1n4001-d.pdf Description: DIODE STANDARD 800V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 3720 Stücke:
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67+0.26 EUR
100+0.18 EUR
130+0.14 EUR
500+0.11 EUR
1000+0.084 EUR
2000+0.067 EUR
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NVD5890NT4G-VF01 NVD5890NT4G-VF01 onsemi NVD5890N-D.PDF Description: POWER MOSFET 40V, 123A, 3.7 MOHM
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVD5805NT4G-VF01 NVD5805NT4G-VF01 onsemi NTD5805N-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SVD5867NLT4G-UM SVD5867NLT4G-UM onsemi NVD5867NL-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 60
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDU5N50NZTU onsemi fdu5n50nztu-d.pdf Description: MOSFET N-CH 500V 4A DPAK3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK3 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
auf Bestellung 13509 Stücke:
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620+0.79 EUR
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NRVBA320NT3G NRVBA320NT3G onsemi mbra320-d.pdf Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NRVBA320NT3G NRVBA320NT3G onsemi mbra320-d.pdf Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4001G 1N4001G onsemi 1n4001-d.pdf Description: DIODE STANDARD 50V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 7118 Stücke:
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67+0.26 EUR
99+0.18 EUR
120+0.15 EUR
500+0.1 EUR
1000+0.082 EUR
2000+0.072 EUR
5000+0.064 EUR
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1N4005G 1N4005G onsemi 1n4001-d.pdf Description: DIODE STANDARD 600V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 14850 Stücke:
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77+0.23 EUR
115+0.15 EUR
136+0.13 EUR
500+0.087 EUR
1000+0.064 EUR
2000+0.055 EUR
5000+0.054 EUR
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NVMFS5C404NLWFET3G NVMFS5C404NLWFET3G onsemi NVMFS5C404NL-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVBG023N065M3S onsemi Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVBG023N065M3S onsemi Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NXH010P90MNF1PTG NXH010P90MNF1PTG onsemi nxh010p90mnf1-d.pdf Description: MOSFET 2N-CH 900V 154A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 328W (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
auf Bestellung 140 Stücke:
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1+205.8 EUR
28+180.3 EUR
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NXH010P120MNF1PTG NXH010P120MNF1PTG onsemi nxh010p120mnf1-d.pdf Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
auf Bestellung 168 Stücke:
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1+269.7 EUR
10+255.44 EUR
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TN6714A TN6714A onsemi tn6714a-d.pdf Description: TRANS NPN 30V 2A TO226-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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NVMJS1D7N04CTWG NVMJS1D7N04CTWG onsemi nvmjs1d7n04c-d.pdf Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMJS1D7N04CTWG NVMJS1D7N04CTWG onsemi nvmjs1d7n04c-d.pdf Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2918 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.17 EUR
10+2.15 EUR
100+1.53 EUR
500+1.25 EUR
1000+1.16 EUR
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FQA13N50C FQA13N50C onsemi FQA13N50C.pdf Description: MOSFET N-CH 500V 13.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.75A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Produkt ist nicht verfügbar
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MB6S MB6S onsemi MB8S-D.PDF Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 225000 Stücke:
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3000+0.25 EUR
6000+0.22 EUR
21000+0.21 EUR
75000+0.2 EUR
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MB6S MB6S onsemi MB8S-D.PDF Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 227618 Stücke:
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16+1.14 EUR
25+0.71 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
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NLV74LCX00DTR2G NLV74LCX00DTR2G onsemi mc74lcx00-d.pdf Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
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NLV74LCX00DTR2G NLV74LCX00DTR2G onsemi mc74lcx00-d.pdf Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
auf Bestellung 2050 Stücke:
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11+1.72 EUR
17+1.04 EUR
25+0.86 EUR
100+0.66 EUR
250+0.56 EUR
500+0.5 EUR
1000+0.45 EUR
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74LCX00SJX 74LCX00SJX onsemi ONSM-S-A0003590285-1.pdf?t.download=true&u=5oefqw Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Produkt ist nicht verfügbar
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74LCX00SJX 74LCX00SJX onsemi ONSM-S-A0003590285-1.pdf?t.download=true&u=5oefqw Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Produkt ist nicht verfügbar
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MC74HC32ADR2G-Q MC74HC32ADR2G-Q onsemi mc74hc32a-d.pdf Description: QUAD OR GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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FAN1616AD25X FAN1616AD25X onsemi FAN1616A.pdf Description: IC REG LINEAR 2.5V 500MA TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: TO-252AA
Voltage - Output (Min/Fixed): 2.5V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 1.2V @ 500mA
Protection Features: Over Current, Over Temperature
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NLX1G10BMX1TCG NLX1G10BMX1TCG onsemi NLX1G10.pdf Description: IC GATE NAND 1CH 3-INP 6ULLGA
Packaging: Bulk
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-ULLGA (1.2x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NC7SVL04L6X NC7SVL04L6X onsemi nc7svl04-d.pdf Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 0.9V ~ 1.5V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
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NC7SVL04L6X NC7SVL04L6X onsemi nc7svl04-d.pdf Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 0.9V ~ 1.5V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
Produkt ist nicht verfügbar
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NSM3005NZTAG NSM3005NZTAG onsemi nsm3005nz-d.pdf Description: TRANS PNP 30V 500MA 6UDFN
Packaging: Tape & Reel (TR)
Voltage - Rated: 30V PNP, 20V N-Channel
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP, N-Channel
Applications: General Purpose
Supplier Device Package: 6-UDFN (1.6x1.6)
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NSM3005NZTAG NSM3005NZTAG onsemi nsm3005nz-d.pdf Description: TRANS PNP 30V 500MA 6UDFN
Packaging: Cut Tape (CT)
Voltage - Rated: 30V PNP, 20V N-Channel
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP, N-Channel
Applications: General Purpose
Supplier Device Package: 6-UDFN (1.6x1.6)
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FAN54046UCX-T onsemi FAN54041-D.PDF Description: USB-OTG, 1.55A, LI-ION SWITCHING
Packaging: Bulk
Package / Case: 25-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 25-WLCSP (2.4x2)
Charge Current - Max: 1.55A
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 6V
Battery Pack Voltage: 4.4V (Max)
Current - Charging: Constant - Programmable
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MC79L15ACDR2 MC79L15ACDR2 onsemi MC79L00%28A%29.pdf Description: IC REG LINEAR -15V 100MA 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): -15V
PSRR: 39dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
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FDMS3626S FDMS3626S onsemi fdms3626s-d.pdf Description: MOSFET 2N-CH 25V 17.5A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 25A
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power56
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MC14569BDWG MC14569BDWG onsemi mc14569b-d.pdf Description: IC DIVIDER BY N DL 4BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Divide-by-N
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 13 MHz
Number of Bits per Element: 4
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MC14569BDWR2G MC14569BDWR2G onsemi mc14569b-d.pdf Description: IC DIVIDER BY N DL 4BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Divide-by-N
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 13 MHz
Number of Bits per Element: 4
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FSFR1800US FSFR1800US onsemi FSFR-US_Series.pdf Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 260 W
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FSFR1800US FSFR1800US onsemi FSFR-US_Series.pdf Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 260 W
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FSFR1800USL onsemi ONSM-S-A0003589564-1.pdf?t.download=true&u=5oefqw Description: HALF BRIDGE BASED PERIPHERAL DRI
Packaging: Bulk
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NSVBCP5616MTWG NSVBCP5616MTWG onsemi BCP56M-D.PDF Description: TRANS NPN 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1n5226B 1n5226B onsemi 1n5221b-d.pdf Description: DIODE ZENER 3.3V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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NSS30070MR6T1G NSS30070MR6T1G onsemi nss30070mr6-d.pdf Description: TRANS PNP 30V 0.7A SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 3V
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 342 mW
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SS3003CH-TL-E SS3003CH-TL-E onsemi en8992-d.pdf Description: DIODE SCHOTTKY 30V 3A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: 6-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 15 V
Produkt ist nicht verfügbar
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MC10LVEP16DG MC10LVEP16DG onsemi mc10lvep16-d.pdf Description: IC RECEIVER/DRVR ECL DIFF 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Differential Receiver/Driver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 2.375V ~ 3.8V
Supplier Device Package: 8-SOIC
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NTBG032N065M3S NTBG032N065M3S onsemi ntbg032n065m3s-d.pdf Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
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NTBG032N065M3S NTBG032N065M3S onsemi ntbg032n065m3s-d.pdf Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
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MPSA92RLRMG MPSA92RLRMG onsemi MPSA92-D.PDF Description: TRANS PNP 300V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MMVL3102T1 MMVL3102T1 onsemi MMVL3102T1-D.PDF Description: TUNING DIODE 30V C3/C25 = 4.5-4.
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 25pF @ 3V, 1MHz
Q @ Vr, F: 200 @ 3V, 50MHz
Capacitance Ratio Condition: C3/C25
Supplier Device Package: SOD-323
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 4.8
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MC74HC595AMN1TWG-Q MC74HC595AMN1TWG-Q onsemi mc74hc595a-d.pdf Description: IC TRI-STATE 8BIT 16-QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-QFN (2.5x3.5)
Number of Bits per Element: 8
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MC74HC595AMN1TWG-Q MC74HC595AMN1TWG-Q onsemi mc74hc595a-d.pdf Description: IC TRI-STATE 8BIT 16-QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-QFN (2.5x3.5)
Number of Bits per Element: 8
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NSR0530HT3G NSR0530HT3G onsemi NSR0530H-D.PDF Description: DIODE SCHOTTKY 30V 500MA SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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MC74VHC32DR2G-Q MC74VHC32DR2G-Q onsemi mc74vhc32-d.pdf Description: LOG CMOS GATE OR QUAD
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.26 EUR
5000+0.24 EUR
7500+0.23 EUR
12500+0.21 EUR
25000+0.2 EUR
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MC74VHC32DR2G-Q MC74VHC32DR2G-Q onsemi mc74vhc32-d.pdf Description: LOG CMOS GATE OR QUAD
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
auf Bestellung 60000 Stücke:
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34+0.53 EUR
48+0.37 EUR
54+0.33 EUR
100+0.28 EUR
250+0.26 EUR
500+0.25 EUR
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CPH6355-TL-W CPH6355-TL-W onsemi cph6355-d.pdf Description: MOSFET P-CH 30V 3A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 169mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 6-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V
Produkt ist nicht verfügbar
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TIP49 TIP49 onsemi tip50-d.pdf Description: TRANS NPN 350V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 2 W
auf Bestellung 5034 Stücke:
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TIP49 TIP49 onsemi tip50-d.pdf Description: TRANS NPN 350V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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MM74HC373SJX MM74HC373SJX onsemi ONSM-S-A0003590922-1.pdf?t.download=true&u=5oefqw Description: BUS DRIVER, HC/UH SERIES, 1-FUNC
Packaging: Bulk
auf Bestellung 1161 Stücke:
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419+1.17 EUR
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BCX19 BCX19 onsemi BCX19.pdf Description: TRANS NPN 45V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
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NSVBCP5316MTWG bcp53m-d.pdf
NSVBCP5316MTWG
Hersteller: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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Anzahl Preis
15+1.21 EUR
24+0.76 EUR
100+0.49 EUR
500+0.37 EUR
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BCP5316MTWG bcp53m-d.pdf
BCP5316MTWG
Hersteller: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
auf Bestellung 3000 Stücke:
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Anzahl Preis
15+1.21 EUR
24+0.76 EUR
100+0.49 EUR
500+0.37 EUR
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1N4006G 1n4001-d.pdf
1N4006G
Hersteller: onsemi
Description: DIODE STANDARD 800V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 3720 Stücke:
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Anzahl Preis
67+0.26 EUR
100+0.18 EUR
130+0.14 EUR
500+0.11 EUR
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2000+0.067 EUR
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NVD5890NT4G-VF01 NVD5890N-D.PDF
NVD5890NT4G-VF01
Hersteller: onsemi
Description: POWER MOSFET 40V, 123A, 3.7 MOHM
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVD5805NT4G-VF01 NTD5805N-D.PDF
NVD5805NT4G-VF01
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SVD5867NLT4G-UM NVD5867NL-D.PDF
SVD5867NLT4G-UM
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 60
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDU5N50NZTU fdu5n50nztu-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 500V 4A DPAK3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK3 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
auf Bestellung 13509 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
620+0.79 EUR
Mindestbestellmenge: 620
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NRVBA320NT3G mbra320-d.pdf
NRVBA320NT3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NRVBA320NT3G mbra320-d.pdf
NRVBA320NT3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4001G 1n4001-d.pdf
1N4001G
Hersteller: onsemi
Description: DIODE STANDARD 50V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 7118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
99+0.18 EUR
120+0.15 EUR
500+0.1 EUR
1000+0.082 EUR
2000+0.072 EUR
5000+0.064 EUR
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1N4005G 1n4001-d.pdf
1N4005G
Hersteller: onsemi
Description: DIODE STANDARD 600V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 14850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
115+0.15 EUR
136+0.13 EUR
500+0.087 EUR
1000+0.064 EUR
2000+0.055 EUR
5000+0.054 EUR
Mindestbestellmenge: 77
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NVMFS5C404NLWFET3G NVMFS5C404NL-D.PDF
NVMFS5C404NLWFET3G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVBG023N065M3S
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVBG023N065M3S
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NXH010P90MNF1PTG nxh010p90mnf1-d.pdf
NXH010P90MNF1PTG
Hersteller: onsemi
Description: MOSFET 2N-CH 900V 154A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 328W (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+205.8 EUR
28+180.3 EUR
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NXH010P120MNF1PTG nxh010p120mnf1-d.pdf
NXH010P120MNF1PTG
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+269.7 EUR
10+255.44 EUR
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TN6714A tn6714a-d.pdf
TN6714A
Hersteller: onsemi
Description: TRANS NPN 30V 2A TO226-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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NVMJS1D7N04CTWG nvmjs1d7n04c-d.pdf
NVMJS1D7N04CTWG
Hersteller: onsemi
Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMJS1D7N04CTWG nvmjs1d7n04c-d.pdf
NVMJS1D7N04CTWG
Hersteller: onsemi
Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2918 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
10+2.15 EUR
100+1.53 EUR
500+1.25 EUR
1000+1.16 EUR
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FQA13N50C FQA13N50C.pdf
FQA13N50C
Hersteller: onsemi
Description: MOSFET N-CH 500V 13.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.75A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Produkt ist nicht verfügbar
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MB6S MB8S-D.PDF
MB6S
Hersteller: onsemi
Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 225000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
6000+0.22 EUR
21000+0.21 EUR
75000+0.2 EUR
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MB6S MB8S-D.PDF
MB6S
Hersteller: onsemi
Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 227618 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
25+0.71 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
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NLV74LCX00DTR2G mc74lcx00-d.pdf
NLV74LCX00DTR2G
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NLV74LCX00DTR2G mc74lcx00-d.pdf
NLV74LCX00DTR2G
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
auf Bestellung 2050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
17+1.04 EUR
25+0.86 EUR
100+0.66 EUR
250+0.56 EUR
500+0.5 EUR
1000+0.45 EUR
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74LCX00SJX ONSM-S-A0003590285-1.pdf?t.download=true&u=5oefqw
74LCX00SJX
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Produkt ist nicht verfügbar
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74LCX00SJX ONSM-S-A0003590285-1.pdf?t.download=true&u=5oefqw
74LCX00SJX
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Produkt ist nicht verfügbar
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MC74HC32ADR2G-Q mc74hc32a-d.pdf
MC74HC32ADR2G-Q
Hersteller: onsemi
Description: QUAD OR GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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FAN1616AD25X FAN1616A.pdf
FAN1616AD25X
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 500MA TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: TO-252AA
Voltage - Output (Min/Fixed): 2.5V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 1.2V @ 500mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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NLX1G10BMX1TCG NLX1G10.pdf
NLX1G10BMX1TCG
Hersteller: onsemi
Description: IC GATE NAND 1CH 3-INP 6ULLGA
Packaging: Bulk
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-ULLGA (1.2x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2959+0.16 EUR
Mindestbestellmenge: 2959
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NC7SVL04L6X nc7svl04-d.pdf
NC7SVL04L6X
Hersteller: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 0.9V ~ 1.5V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
Produkt ist nicht verfügbar
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NC7SVL04L6X nc7svl04-d.pdf
NC7SVL04L6X
Hersteller: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 0.9V ~ 1.5V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
Produkt ist nicht verfügbar
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NSM3005NZTAG nsm3005nz-d.pdf
NSM3005NZTAG
Hersteller: onsemi
Description: TRANS PNP 30V 500MA 6UDFN
Packaging: Tape & Reel (TR)
Voltage - Rated: 30V PNP, 20V N-Channel
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP, N-Channel
Applications: General Purpose
Supplier Device Package: 6-UDFN (1.6x1.6)
auf Bestellung 276000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.25 EUR
Mindestbestellmenge: 3000
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NSM3005NZTAG nsm3005nz-d.pdf
NSM3005NZTAG
Hersteller: onsemi
Description: TRANS PNP 30V 500MA 6UDFN
Packaging: Cut Tape (CT)
Voltage - Rated: 30V PNP, 20V N-Channel
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP, N-Channel
Applications: General Purpose
Supplier Device Package: 6-UDFN (1.6x1.6)
auf Bestellung 276000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
21+0.85 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 13
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FAN54046UCX-T FAN54041-D.PDF
Hersteller: onsemi
Description: USB-OTG, 1.55A, LI-ION SWITCHING
Packaging: Bulk
Package / Case: 25-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 25-WLCSP (2.4x2)
Charge Current - Max: 1.55A
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 6V
Battery Pack Voltage: 4.4V (Max)
Current - Charging: Constant - Programmable
Produkt ist nicht verfügbar
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MC79L15ACDR2 MC79L00%28A%29.pdf
MC79L15ACDR2
Hersteller: onsemi
Description: IC REG LINEAR -15V 100MA 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): -15V
PSRR: 39dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
993+0.46 EUR
Mindestbestellmenge: 993
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FDMS3626S fdms3626s-d.pdf
FDMS3626S
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 17.5A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 25A
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power56
auf Bestellung 558 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.31 EUR
10+2.24 EUR
100+1.59 EUR
500+1.3 EUR
Mindestbestellmenge: 6
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MC14569BDWG mc14569b-d.pdf
MC14569BDWG
Hersteller: onsemi
Description: IC DIVIDER BY N DL 4BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Divide-by-N
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 13 MHz
Number of Bits per Element: 4
auf Bestellung 939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
229+2.03 EUR
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MC14569BDWR2G mc14569b-d.pdf
MC14569BDWR2G
Hersteller: onsemi
Description: IC DIVIDER BY N DL 4BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Divide-by-N
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 13 MHz
Number of Bits per Element: 4
auf Bestellung 6159 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
182+2.55 EUR
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FSFR1800US FSFR-US_Series.pdf
FSFR1800US
Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 260 W
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
125+4.06 EUR
Mindestbestellmenge: 125
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FSFR1800US FSFR-US_Series.pdf
FSFR1800US
Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 260 W
Produkt ist nicht verfügbar
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FSFR1800USL ONSM-S-A0003589564-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: HALF BRIDGE BASED PERIPHERAL DRI
Packaging: Bulk
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
125+4.06 EUR
Mindestbestellmenge: 125
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NSVBCP5616MTWG BCP56M-D.PDF
NSVBCP5616MTWG
Hersteller: onsemi
Description: TRANS NPN 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1n5226B 1n5221b-d.pdf
1n5226B
Hersteller: onsemi
Description: DIODE ZENER 3.3V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
auf Bestellung 319342 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
182+0.097 EUR
422+0.042 EUR
500+0.037 EUR
1000+0.028 EUR
2000+0.027 EUR
5000+0.025 EUR
10000+0.023 EUR
Mindestbestellmenge: 100
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NSS30070MR6T1G nss30070mr6-d.pdf
NSS30070MR6T1G
Hersteller: onsemi
Description: TRANS PNP 30V 0.7A SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 3V
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 342 mW
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.2 EUR
23+0.8 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 15
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SS3003CH-TL-E en8992-d.pdf
SS3003CH-TL-E
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 3A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: 6-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 15 V
Produkt ist nicht verfügbar
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MC10LVEP16DG mc10lvep16-d.pdf
MC10LVEP16DG
Hersteller: onsemi
Description: IC RECEIVER/DRVR ECL DIFF 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Differential Receiver/Driver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 2.375V ~ 3.8V
Supplier Device Package: 8-SOIC
auf Bestellung 49148 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
70+7.27 EUR
Mindestbestellmenge: 70
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NTBG032N065M3S ntbg032n065m3s-d.pdf
NTBG032N065M3S
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+6.43 EUR
Mindestbestellmenge: 800
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NTBG032N065M3S ntbg032n065m3s-d.pdf
NTBG032N065M3S
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
auf Bestellung 8495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.8 EUR
10+9.44 EUR
100+7.98 EUR
Mindestbestellmenge: 2
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MPSA92RLRMG MPSA92-D.PDF
MPSA92RLRMG
Hersteller: onsemi
Description: TRANS PNP 300V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
auf Bestellung 238440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5453+0.091 EUR
Mindestbestellmenge: 5453
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MMVL3102T1 MMVL3102T1-D.PDF
MMVL3102T1
Hersteller: onsemi
Description: TUNING DIODE 30V C3/C25 = 4.5-4.
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 25pF @ 3V, 1MHz
Q @ Vr, F: 200 @ 3V, 50MHz
Capacitance Ratio Condition: C3/C25
Supplier Device Package: SOD-323
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 4.8
Produkt ist nicht verfügbar
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MC74HC595AMN1TWG-Q mc74hc595a-d.pdf
MC74HC595AMN1TWG-Q
Hersteller: onsemi
Description: IC TRI-STATE 8BIT 16-QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-QFN (2.5x3.5)
Number of Bits per Element: 8
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.28 EUR
9000+0.27 EUR
Mindestbestellmenge: 3000
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MC74HC595AMN1TWG-Q mc74hc595a-d.pdf
MC74HC595AMN1TWG-Q
Hersteller: onsemi
Description: IC TRI-STATE 8BIT 16-QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-QFN (2.5x3.5)
Number of Bits per Element: 8
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
39+0.46 EUR
43+0.41 EUR
100+0.36 EUR
250+0.33 EUR
500+0.32 EUR
1000+0.3 EUR
Mindestbestellmenge: 27
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NSR0530HT3G NSR0530H-D.PDF
NSR0530HT3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 500MA SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
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MC74VHC32DR2G-Q mc74vhc32-d.pdf
MC74VHC32DR2G-Q
Hersteller: onsemi
Description: LOG CMOS GATE OR QUAD
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.26 EUR
5000+0.24 EUR
7500+0.23 EUR
12500+0.21 EUR
25000+0.2 EUR
Mindestbestellmenge: 2500
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MC74VHC32DR2G-Q mc74vhc32-d.pdf
MC74VHC32DR2G-Q
Hersteller: onsemi
Description: LOG CMOS GATE OR QUAD
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
48+0.37 EUR
54+0.33 EUR
100+0.28 EUR
250+0.26 EUR
500+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 34
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CPH6355-TL-W cph6355-d.pdf
CPH6355-TL-W
Hersteller: onsemi
Description: MOSFET P-CH 30V 3A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 169mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 6-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V
Produkt ist nicht verfügbar
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TIP49 tip50-d.pdf
TIP49
Hersteller: onsemi
Description: TRANS NPN 350V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 2 W
auf Bestellung 5034 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
549+0.89 EUR
Mindestbestellmenge: 549
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TIP49 tip50-d.pdf
TIP49
Hersteller: onsemi
Description: TRANS NPN 350V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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MM74HC373SJX ONSM-S-A0003590922-1.pdf?t.download=true&u=5oefqw
MM74HC373SJX
Hersteller: onsemi
Description: BUS DRIVER, HC/UH SERIES, 1-FUNC
Packaging: Bulk
auf Bestellung 1161 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
419+1.17 EUR
Mindestbestellmenge: 419
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BCX19 BCX19.pdf
BCX19
Hersteller: onsemi
Description: TRANS NPN 45V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
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