Foto | Bezeichnung | Hersteller | Beschreibung |
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P6KE68ARL | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.5A (8/20µs) Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 600W Power Line Protection: No |
Produkt ist nicht verfügbar |
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MOC3021 | onsemi |
![]() Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Voltage - Isolation: 5300Vrms Current - Hold (Ih): 100µA Supplier Device Package: 6-DIP Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 15mA Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
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IRL540A | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 14A, 5V Power Dissipation (Max): 121W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2N7002K | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V |
auf Bestellung 156000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002K | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V |
auf Bestellung 162831 Stücke: Lieferzeit 10-14 Tag (e) |
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MPQ6842 | onsemi |
![]() Packaging: Bulk Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Transistor Type: 1 NPN, 1 PNP Complementary Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V Frequency - Transition: 350MHz Supplier Device Package: 14-PDIP |
auf Bestellung 8746 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX55C12 | onsemi |
![]() Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 9 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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H11L1 | onsemi |
![]() ![]() Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Open Collector Mounting Type: Through Hole Data Rate: 1MHz Input Type: DC Voltage - Isolation: 5300Vrms Current - DC Forward (If) (Max): 1.6mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-DIP Number of Channels: 1 Current - Output / Channel: 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NC7SZ10P6X-L22347 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: SC-88/SC70-6/SOT-363 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FJD3076TM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 3V Frequency - Transition: 100MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NSB4904DW1T2G | onsemi |
![]() Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GBPC3506W | onsemi |
![]() Packaging: Tray Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTBL032N065M3S | onsemi |
![]() Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 400 V |
auf Bestellung 15995 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4L032N065M3S | onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V |
auf Bestellung 10700 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG032N065M3S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 136000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG032N065M3S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 136768 Stücke: Lieferzeit 10-14 Tag (e) |
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NVH4L032N065M3S | onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: TO-247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 14362 Stücke: Lieferzeit 10-14 Tag (e) |
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BD679 | onsemi |
![]() Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BD140 | onsemi |
![]() Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.25 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MM74HC00SJX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MM74HC00SJX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MM74HC00SJX | onsemi |
![]() Packaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
auf Bestellung 22000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMJD036N10MCLTWG | onsemi |
![]() Packaging: Bulk Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 36W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 50V Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 26µA Supplier Device Package: 8-LFPAK Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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MC14538BFELG | onsemi |
![]() Packaging: Bulk Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Monostable Operating Temperature: -55°C ~ 125°C Propagation Delay: 95 ns Independent Circuits: 2 Current - Output High, Low: 8.8mA, 8.8mA Schmitt Trigger Input: Yes Supplier Device Package: 16-SOEIAJ Voltage - Supply: 3 V ~ 18 V |
auf Bestellung 255 Stücke: Lieferzeit 10-14 Tag (e) |
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1.5KE33A | onsemi |
![]() Packaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SCH1436-TL-H | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 900mA, 10V Power Dissipation (Max): 800mW (Ta) Supplier Device Package: 6-SCH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SCH1430-TL-H | onsemi |
![]() Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 4.5V Power Dissipation (Max): 800mW (Ta) Supplier Device Package: 6-SCH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 128 pF @ 10 V |
auf Bestellung 32480 Stücke: Lieferzeit 10-14 Tag (e) |
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SCH1433-TL-H | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V Power Dissipation (Max): 800mW (Ta) Supplier Device Package: 6-SCH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V |
Produkt ist nicht verfügbar |
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SCH1433-S-TL-H | onsemi |
Description: MOSFET N-CH 20V 3.5A SCH6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 3.5A (Tj) Supplier Device Package: 6-SCH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KA393 | onsemi |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Elements: 2 Type: General Purpose Operating Temperature: 0°C ~ 70°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 8-DIP Current - Quiescent (Max): 2.5mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 18mA @ 5V |
auf Bestellung 1284 Stücke: Lieferzeit 10-14 Tag (e) |
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KA393 | onsemi |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Elements: 2 Type: General Purpose Operating Temperature: 0°C ~ 70°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 8-DIP Current - Quiescent (Max): 2.5mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 18mA @ 5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KA393ADTF | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: 0°C ~ 70°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 8-SOIC Current - Quiescent (Max): 2.5mA Voltage - Input Offset (Max): 2mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 18mA @ 5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KA393ADTF | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: 0°C ~ 70°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 8-SOIC Current - Quiescent (Max): 2.5mA Voltage - Input Offset (Max): 2mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 18mA @ 5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KA393D | onsemi |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: 0°C ~ 70°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 8-SOIC Current - Quiescent (Max): 2.5mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 18mA @ 5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR1045 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V |
auf Bestellung 1874 Stücke: Lieferzeit 10-14 Tag (e) |
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MBR1045 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2SC5536A-TL-H | onsemi |
![]() Packaging: Bulk Package / Case: SC-81 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 16dB Power - Max: 100mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 2V Frequency - Transition: 1.7GHz Noise Figure (dB Typ @ f): 1.8dB @ 150MHz Supplier Device Package: 3-SSFP |
auf Bestellung 166913 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75329D3S | onsemi |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MM74HC4050MX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 5.2mA, 5.2mA Supplier Device Package: 16-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MM74HC4050MX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 5.2mA, 5.2mA Supplier Device Package: 16-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74VHC1GT14DFT2G | onsemi |
![]() Packaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: SC-88A (SC-70-5/SOT-353) Input Logic Level - High: 2.2V ~ 3.85V Input Logic Level - Low: 1.5V ~ 2.9V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
auf Bestellung 1840 Stücke: Lieferzeit 10-14 Tag (e) |
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M74VHC1GT14DTT1G | onsemi |
![]() Packaging: Bulk Features: Schmitt Trigger Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 5-TSOP Input Logic Level - High: 1.6V ~ 2.1V Input Logic Level - Low: 0.35V ~ 0.6V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
auf Bestellung 127308 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74VHC1GT14DFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: SC-88A (SC-70-5/SOT-353) Input Logic Level - High: 2.2V ~ 3.85V Input Logic Level - Low: 1.5V ~ 2.9V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
auf Bestellung 350 Stücke: Lieferzeit 10-14 Tag (e) |
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MBRB2515LG | onsemi |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 25A Supplier Device Package: D2PAK Operating Temperature - Junction: 100°C (Max) Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 25 A Current - Reverse Leakage @ Vr: 15 mA @ 15 V |
auf Bestellung 121 Stücke: Lieferzeit 10-14 Tag (e) |
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2N4400TA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 1V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2N4400TFR | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 1V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ML4824CP1 | onsemi |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: 0°C ~ 70°C Voltage - Supply: 10.5V ~ 13.2V Frequency - Switching: 76kHz Mode: Average Current Supplier Device Package: 16-PDIP Current - Startup: 700 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ML4824CP2 | onsemi |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: 0°C ~ 70°C Voltage - Supply: 10.5V ~ 13.2V Frequency - Switching: 76kHz Mode: Average Current Supplier Device Package: 16-PDIP Current - Startup: 700 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BD136 | onsemi |
![]() Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.25 W |
auf Bestellung 156343 Stücke: Lieferzeit 10-14 Tag (e) |
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BD136 | onsemi |
![]() Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.25 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SDTA114YET1G | onsemi |
![]() Packaging: Bulk Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 138000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5348B | onsemi |
![]() ![]() Packaging: Bulk Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1N5822 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 190pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1N5822 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 190pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HGT1S7N60C3DS | onsemi |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Supplier Device Package: TO-263 (D2Pak) Switching Energy: 165µJ (on), 600µJ (off) Test Condition: 480V, 7A, 50Ohm, 15V Gate Charge: 23 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCW72LT1 | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84C9V1 | onsemi |
![]() Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 6 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX84C9V1 | onsemi |
![]() Packaging: Cut Tape (CT) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 6 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1N4148TR | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
auf Bestellung 17390000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4148TR | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
auf Bestellung 17391457 Stücke: Lieferzeit 10-14 Tag (e) |
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P6KE68ARL |
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Hersteller: onsemi
Description: TVS DIODE 58.1VWM 92VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 58.1VWM 92VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MOC3021 |
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Hersteller: onsemi
Description: OPTOISOLTR 5.3KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Voltage - Isolation: 5300Vrms
Current - Hold (Ih): 100µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 5.3KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Voltage - Isolation: 5300Vrms
Current - Hold (Ih): 100µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540A |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 14A, 5V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
Description: MOSFET N-CH 100V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 14A, 5V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N7002K |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 320MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
Description: MOSFET N-CH 60V 320MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
auf Bestellung 156000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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3000+ | 0.071 EUR |
6000+ | 0.069 EUR |
9000+ | 0.06 EUR |
2N7002K |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 320MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
Description: MOSFET N-CH 60V 320MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
auf Bestellung 162831 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 0.48 EUR |
73+ | 0.24 EUR |
128+ | 0.14 EUR |
1000+ | 0.12 EUR |
MPQ6842 |
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Hersteller: onsemi
Description: TRANS NPN/PNP 30V 200MA 14-PDIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
Frequency - Transition: 350MHz
Supplier Device Package: 14-PDIP
Description: TRANS NPN/PNP 30V 200MA 14-PDIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
Frequency - Transition: 350MHz
Supplier Device Package: 14-PDIP
auf Bestellung 8746 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
243+ | 1.92 EUR |
BZX55C12 |
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Hersteller: onsemi
Description: DIODE ZENER 12V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Description: DIODE ZENER 12V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Produkt ist nicht verfügbar
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H11L1 | ![]() |
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Hersteller: onsemi
Description: OPTOISO 5.3KV OPN COLL 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 5300Vrms
Current - DC Forward (If) (Max): 1.6mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5.3KV OPN COLL 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 5300Vrms
Current - DC Forward (If) (Max): 1.6mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Number of Channels: 1
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
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NC7SZ10P6X-L22347 |
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Hersteller: onsemi
Description: IC GATE NAND 1CH 3-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-88/SC70-6/SOT-363
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 1CH 3-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-88/SC70-6/SOT-363
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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FJD3076TM |
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Hersteller: onsemi
Description: TRANS NPN 32V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
Description: TRANS NPN 32V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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NSB4904DW1T2G |
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Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Produkt ist nicht verfügbar
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GBPC3506W |
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Hersteller: onsemi
Description: BRIDGE RECT 1P 600V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1P 600V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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NTBL032N065M3S |
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Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 400 V
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 400 V
auf Bestellung 15995 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.58 EUR |
10+ | 8.58 EUR |
100+ | 6.31 EUR |
500+ | 5.64 EUR |
NTH4L032N065M3S |
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Hersteller: onsemi
Description: SIC MOS TO247-4L 32MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
Description: SIC MOS TO247-4L 32MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
auf Bestellung 10700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 15.07 EUR |
10+ | 10.46 EUR |
450+ | 8.54 EUR |
NVBG032N065M3S |
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Hersteller: onsemi
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 136000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
800+ | 12.74 EUR |
NVBG032N065M3S |
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Hersteller: onsemi
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 136768 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 20.59 EUR |
10+ | 14.6 EUR |
100+ | 12.96 EUR |
NVH4L032N065M3S |
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Hersteller: onsemi
Description: SIC MOS TO247-4L 32MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
Qualification: AEC-Q101
Description: SIC MOS TO247-4L 32MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 14362 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 22.11 EUR |
30+ | 14.9 EUR |
120+ | 14.01 EUR |
510+ | 13.72 EUR |
BD679 |
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Hersteller: onsemi
Description: TRANS NPN DARL 80V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Description: TRANS NPN DARL 80V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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BD140 |
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Hersteller: onsemi
Description: TRANS PNP 80V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
Description: TRANS PNP 80V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC00SJX |
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Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MM74HC00SJX |
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Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC00SJX |
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Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 22000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
561+ | 0.84 EUR |
NVMJD036N10MCLTWG |
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Hersteller: onsemi
Description: MOSFET - POWER, DUAL, N-CHANNEL,
Packaging: Bulk
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 50V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET - POWER, DUAL, N-CHANNEL,
Packaging: Bulk
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 50V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
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MC14538BFELG |
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Hersteller: onsemi
Description: IC MMV 2-CIR 95-NS 16-SOEIAJ
Packaging: Bulk
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -55°C ~ 125°C
Propagation Delay: 95 ns
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOEIAJ
Voltage - Supply: 3 V ~ 18 V
Description: IC MMV 2-CIR 95-NS 16-SOEIAJ
Packaging: Bulk
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -55°C ~ 125°C
Propagation Delay: 95 ns
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOEIAJ
Voltage - Supply: 3 V ~ 18 V
auf Bestellung 255 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
255+ | 1.04 EUR |
1.5KE33A |
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Hersteller: onsemi
Description: TVS DIODE 28.2VWM 45.7VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 28.2VWM 45.7VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SCH1436-TL-H |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 1.8A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 900mA, 10V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
Description: MOSFET N-CH 30V 1.8A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 900mA, 10V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
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SCH1430-TL-H |
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Hersteller: onsemi
Description: MOSFET N-CH 20V 2A 6SCH
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 128 pF @ 10 V
Description: MOSFET N-CH 20V 2A 6SCH
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 128 pF @ 10 V
auf Bestellung 32480 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1986+ | 0.23 EUR |
SCH1433-TL-H |
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Hersteller: onsemi
Description: MOSFET N-CH 20V 3.5A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
Description: MOSFET N-CH 20V 3.5A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
Produkt ist nicht verfügbar
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SCH1433-S-TL-H |
Hersteller: onsemi
Description: MOSFET N-CH 20V 3.5A SCH6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tj)
Supplier Device Package: 6-SCH
Description: MOSFET N-CH 20V 3.5A SCH6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tj)
Supplier Device Package: 6-SCH
Produkt ist nicht verfügbar
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KA393 |
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Hersteller: onsemi
Description: IC COMPARATOR 2 GEN PUR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-DIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Description: IC COMPARATOR 2 GEN PUR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-DIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
auf Bestellung 1284 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.31 EUR |
10+ | 2.06 EUR |
50+ | 1.54 EUR |
100+ | 1.37 EUR |
250+ | 1.19 EUR |
500+ | 1.08 EUR |
1000+ | 0.99 EUR |
KA393 |
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Hersteller: onsemi
Description: IC COMPARATOR 2 GEN PUR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-DIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Description: IC COMPARATOR 2 GEN PUR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-DIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
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KA393ADTF |
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Hersteller: onsemi
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SOIC
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 2mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SOIC
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 2mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Produkt ist nicht verfügbar
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KA393ADTF |
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Hersteller: onsemi
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SOIC
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 2mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SOIC
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 2mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Produkt ist nicht verfügbar
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KA393D |
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Hersteller: onsemi
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SOIC
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SOIC
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Produkt ist nicht verfügbar
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MBR1045 |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 10A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
auf Bestellung 1874 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
560+ | 0.82 EUR |
MBR1045 |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 10A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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2SC5536A-TL-H |
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Hersteller: onsemi
Description: RF TRANS NPN 12V 1.7GHZ 3-SSFP
Packaging: Bulk
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 2V
Frequency - Transition: 1.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 150MHz
Supplier Device Package: 3-SSFP
Description: RF TRANS NPN 12V 1.7GHZ 3-SSFP
Packaging: Bulk
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 2V
Frequency - Transition: 1.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 150MHz
Supplier Device Package: 3-SSFP
auf Bestellung 166913 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1818+ | 0.26 EUR |
HUF75329D3S |
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Hersteller: onsemi
Description: MOSFET N-CH 55V 20A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Description: MOSFET N-CH 55V 20A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Produkt ist nicht verfügbar
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MM74HC4050MX |
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Hersteller: onsemi
Description: IC BUFFER NON-INVERT 6V 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 5.2mA, 5.2mA
Supplier Device Package: 16-SOIC
Description: IC BUFFER NON-INVERT 6V 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 5.2mA, 5.2mA
Supplier Device Package: 16-SOIC
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MM74HC4050MX |
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Hersteller: onsemi
Description: IC BUFFER NON-INVERT 6V 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 5.2mA, 5.2mA
Supplier Device Package: 16-SOIC
Description: IC BUFFER NON-INVERT 6V 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 5.2mA, 5.2mA
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar
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MC74VHC1GT14DFT2G |
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Hersteller: onsemi
Description: IC INVERT SCHMITT 1CH 1INP SC88A
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 1.5V ~ 2.9V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 1CH 1INP SC88A
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 1.5V ~ 2.9V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 1840 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.16 EUR |
170+ | 0.1 EUR |
194+ | 0.091 EUR |
231+ | 0.076 EUR |
254+ | 0.069 EUR |
500+ | 0.065 EUR |
1000+ | 0.062 EUR |
M74VHC1GT14DTT1G |
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Hersteller: onsemi
Description: IC INVERT SCHMITT 1CH 1INP 5TSOP
Packaging: Bulk
Features: Schmitt Trigger
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-TSOP
Input Logic Level - High: 1.6V ~ 2.1V
Input Logic Level - Low: 0.35V ~ 0.6V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 1CH 1INP 5TSOP
Packaging: Bulk
Features: Schmitt Trigger
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-TSOP
Input Logic Level - High: 1.6V ~ 2.1V
Input Logic Level - Low: 0.35V ~ 0.6V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 127308 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3439+ | 0.14 EUR |
MC74VHC1GT14DFT1G |
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Hersteller: onsemi
Description: IC INVERT SCHMITT 1CH 1INP SC88A
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 1.5V ~ 2.9V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 1CH 1INP SC88A
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 1.5V ~ 2.9V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.16 EUR |
179+ | 0.099 EUR |
205+ | 0.086 EUR |
244+ | 0.072 EUR |
269+ | 0.066 EUR |
MBRB2515LG |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 15V 25A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 100°C (Max)
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 25 A
Current - Reverse Leakage @ Vr: 15 mA @ 15 V
Description: DIODE SCHOTTKY 15V 25A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 100°C (Max)
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 25 A
Current - Reverse Leakage @ Vr: 15 mA @ 15 V
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
121+ | 2.07 EUR |
2N4400TA |
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Hersteller: onsemi
Description: TRANS NPN 40V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS NPN 40V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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2N4400TFR |
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Hersteller: onsemi
Description: TRANS NPN 40V 0.6A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS NPN 40V 0.6A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
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ML4824CP1 |
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Hersteller: onsemi
Description: IC PFC CTR AVER CURR 76KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-PDIP
Current - Startup: 700 µA
Description: IC PFC CTR AVER CURR 76KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-PDIP
Current - Startup: 700 µA
Produkt ist nicht verfügbar
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ML4824CP2 |
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Hersteller: onsemi
Description: IC PFC CTR AVER CURR 76KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-PDIP
Current - Startup: 700 µA
Description: IC PFC CTR AVER CURR 76KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-PDIP
Current - Startup: 700 µA
Produkt ist nicht verfügbar
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BD136 |
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Hersteller: onsemi
Description: TRANS PNP 45V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
Description: TRANS PNP 45V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
auf Bestellung 156343 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1399+ | 0.32 EUR |
BD136 |
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Hersteller: onsemi
Description: TRANS PNP 45V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
Description: TRANS PNP 45V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
Produkt ist nicht verfügbar
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SDTA114YET1G |
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Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 138000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9458+ | 0.046 EUR |
1N5348B | ![]() |
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Hersteller: onsemi
Description: DIODE ZENER 11V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
Description: DIODE ZENER 11V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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1N5822 |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 190pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 190pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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1N5822 |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 190pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 190pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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HGT1S7N60C3DS |
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Hersteller: onsemi
Description: IGBT 600V 14A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
Switching Energy: 165µJ (on), 600µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
Description: IGBT 600V 14A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
Switching Energy: 165µJ (on), 600µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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BCW72LT1 |
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Hersteller: onsemi
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9458+ | 0.046 EUR |
BZX84C9V1 |
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Hersteller: onsemi
Description: DIODE ZENER 9.1V 350MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Description: DIODE ZENER 9.1V 350MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Produkt ist nicht verfügbar
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BZX84C9V1 |
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Hersteller: onsemi
Description: DIODE ZENER 9.1V 350MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Description: DIODE ZENER 9.1V 350MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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1N4148TR |
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Hersteller: onsemi
Description: DIODE STANDARD 100V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STANDARD 100V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 17390000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.012 EUR |
20000+ | 0.011 EUR |
30000+ | 0.01 EUR |
1N4148TR |
![]() |
Hersteller: onsemi
Description: DIODE STANDARD 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STANDARD 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 17391457 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.16 EUR |
286+ | 0.062 EUR |
375+ | 0.047 EUR |
523+ | 0.034 EUR |
1000+ | 0.027 EUR |
2000+ | 0.025 EUR |
5000+ | 0.022 EUR |