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MM74HC164N MM74HC164N onsemi mm74hc164-d.pdf Description: IC SR PUSH-PULL 8BIT 14-MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-MDIP
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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MM74HC138MTC MM74HC138MTC onsemi MM74HC138-D.PDF Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
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FCPF260N65FL1 FCPF260N65FL1 onsemi fcpf260n65fl1-d.pdf Description: MOSFET N-CH 650V 15A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Produkt ist nicht verfügbar
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NE555D NE555D onsemi NE555.pdf slfs022i.pdf?t.download=true&u=5oefqw FAIRS20025-1.pdf?t.download=true&u=5oefqw Description: IC OSC SINGLE TIMER 8-SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: 555 Type, Timer/Oscillator (Single)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 16V
Supplier Device Package: 8-SOIC
Current - Supply: 7.5 mA
Produkt ist nicht verfügbar
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NE555N NE555N onsemi NE555.pdf Description: IC OSC SINGLE TIMER 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: 555 Type, Timer/Oscillator (Single)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 16V
Supplier Device Package: 8-DIP
Current - Supply: 7.5 mA
Produkt ist nicht verfügbar
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NM93C56EM8 NM93C56EM8 onsemi NM93C56.pdf Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MC34063AP MC34063AP onsemi MC33063A%2C34063A.pdf description Description: IC REG BUCK BOOST ADJ 1.5A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100Hz ~ 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-DIP
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.24V
Produkt ist nicht verfügbar
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KSA1015OBU KSA1015OBU onsemi ksa1015-d.pdf Description: TRANS PNP 50V 0.15A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
Produkt ist nicht verfügbar
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KSA1015GRTA KSA1015GRTA onsemi KSA1015.pdf Description: TRANS PNP 50V 0.15A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
Produkt ist nicht verfügbar
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BUT11A BUT11A onsemi BUT11%28A%29.pdf Description: TRANS NPN 450V 5A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Produkt ist nicht verfügbar
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BUT11ATU BUT11ATU onsemi BUT11%28A%29.pdf Description: TRANS NPN 450V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Produkt ist nicht verfügbar
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MBR3045PT MBR3045PT onsemi MBR3035-60PT.pdf Description: DIODE ARR SCHOTT 45V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 9 Stücke:
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Mindestbestellmenge: 9
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MBR3045PT MBR3045PT onsemi MBR3035-60PT.pdf Description: DIODE ARR SCHOTT 45V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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NCL2801CDFDR2G NCL2801CDFDR2G onsemi ncl2801-d.pdf Description: ENHANCED HIGH-EFFICIENCY POWER F
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10.5V
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Supplier Device Package: 8-SOIC
Current - Startup: 10 µA
Produkt ist nicht verfügbar
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NCL2801CDFDR2G NCL2801CDFDR2G onsemi ncl2801-d.pdf Description: ENHANCED HIGH-EFFICIENCY POWER F
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10.5V
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Supplier Device Package: 8-SOIC
Current - Startup: 10 µA
Produkt ist nicht verfügbar
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FJY3002R FJY3002R onsemi fjy3002r-d.pdf Description: TRANS PREBIAS NPN 50V SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SC-89-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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1N5357B 1N5357B onsemi 1n5333b-d.pdf Description: DIODE ZENER 20V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 15.2 V
Produkt ist nicht verfügbar
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MBR1060 MBR1060 onsemi mbr1060-d.pdf Description: DIODE SCHOTTKY 60V 10A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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SB560 SB560 onsemi sb580-d.pdf Description: DIODE SCHOTTKY 60V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 380pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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1N4743A 1N4743A onsemi 1N4736AT-D.PDF Description: DIODE ZENER 13V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
auf Bestellung 44185 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
115+0.15 EUR
223+0.079 EUR
500+0.073 EUR
1000+0.07 EUR
3000+0.056 EUR
6000+0.05 EUR
12000+0.047 EUR
Mindestbestellmenge: 72
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BC848AWT1 BC848AWT1 onsemi BC846AWT1-D.PDF Description: TRANS NPN 30V 0.1A SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
Produkt ist nicht verfügbar
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BC848AWT1G BC848AWT1G onsemi BC846AWT1-D.PDF Description: TRANS NPN 30V 0.1A SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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1N4004 1N4004 onsemi 1n4001-d.pdf Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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1N4004 1N4004 onsemi 1n4001-d.pdf Description: DIODE STANDARD 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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1N4004GP 1N4004GP onsemi 1N4001.pdf Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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BC33725 BC33725 onsemi bc337-fsc-d.pdf Description: TRANS NPN 45V 0.8A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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UJ4C075023B7S UJ4C075023B7S onsemi UJ4C075023B7S-D.PDF Description: 750V/23MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
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UJ4C075023B7S UJ4C075023B7S onsemi UJ4C075023B7S-D.PDF Description: 750V/23MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.83 EUR
10+21.33 EUR
100+20.51 EUR
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NCV8505D2T50R4G NCV8505D2T50R4G onsemi ncv8505-d.pdf Description: IC REG LINEAR 5V 400MA D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 350 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-7
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 45 mA
Qualification: AEC-Q100
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
750+2.66 EUR
1500+2.59 EUR
2250+2.55 EUR
3750+2.51 EUR
5250+2.49 EUR
Mindestbestellmenge: 750
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NCV8505D2T50R4G NCV8505D2T50R4G onsemi ncv8505-d.pdf Description: IC REG LINEAR 5V 400MA D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 350 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-7
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 45 mA
Qualification: AEC-Q100
auf Bestellung 13876 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.77 EUR
10+3.58 EUR
25+3.28 EUR
100+2.95 EUR
250+2.8 EUR
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NVBG095N065SC1 NVBG095N065SC1 onsemi nvbg095n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Qualification: AEC-Q101
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NVBG095N065SC1 NVBG095N065SC1 onsemi nvbg095n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Qualification: AEC-Q101
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UJ4C075044B7S UJ4C075044B7S onsemi UJ4C075044B7S-D.PDF Description: 750V/44MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
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UJ4C075044B7S UJ4C075044B7S onsemi UJ4C075044B7S-D.PDF Description: 750V/44MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
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NSBC114YPDP6T5G NSBC114YPDP6T5G onsemi dtc114yp-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-963
Packaging: Bulk
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
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BZX55C8V2 BZX55C8V2 onsemi BZX55C2V4%20-%20BZX55C56.pdf Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6 V
Produkt ist nicht verfügbar
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MM3Z24VT1G MM3Z24VT1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 24V 300MW SOD323
Tolerance: ±6%
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
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BZX85C18-T50R BZX85C18-T50R onsemi bzx85c3v3-d.pdf Description: DIODE ZENER 18V 1W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
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BZX85C18 BZX85C18 onsemi BZX85C3V3-C56.pdf Description: DIODE ZENER 18V 1W DO41
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Produkt ist nicht verfügbar
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BZX85C18-T50R BZX85C18-T50R onsemi BZX85C3V3-C56.pdf Description: DIODE ZENER 18V 1W DO41
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Produkt ist nicht verfügbar
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LMV358MUTAG LMV358MUTAG onsemi lmv321-d.pdf Description: IC VOLTAGE FEEDBACK 2 CIRC 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 100µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 8-UDFN (1.8x1.2)
Number of Circuits: 2
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
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LA1654FN-TLM-E-ON LA1654FN-TLM-E-ON onsemi Description: TIME CODE RECEPTION IC
Packaging: Bulk
auf Bestellung 1000 Stücke:
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BAT54C BAT54C onsemi BAT54%28A%2CC%2CS%29.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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DM74ALS245AMSAX DM74ALS245AMSAX onsemi DM74ALS245A.pdf Description: IC TXRX NON-INVERT 5.5V 20-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 15mA, 24mA
Supplier Device Package: 20-SSOP
Produkt ist nicht verfügbar
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FM27C256V120 FM27C256V120 onsemi FM27C256.pdf Description: IC EPROM 256KBIT PARALLEL 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-PLCC (14x11.46)
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NP2100SAT3G NP2100SAT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 180V 50A DO-214AA
Packaging: Bulk
Capacitance: 37pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 240V
Voltage - Off State: 180V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
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NP2100SBT3G NP2100SBT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 180V 80A DO-214AA
Packaging: Bulk
Capacitance: 59pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 240V
Voltage - Off State: 180V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
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NP2100SCT3G NP2100SCT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 180V 100A DO-214AA
Packaging: Bulk
Capacitance: 97pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 240V
Voltage - Off State: 180V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
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699+0.65 EUR
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UC3844BN UC3844BN onsemi UC3844%2C3845%2C2844%2C2845B.pdf description Description: IC REG CTRLR PWM CM 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 36V
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
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NVMFWS1D7N04XMT1G NVMFWS1D7N04XMT1G onsemi nvmfws1d7n04xm-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.94 EUR
3000+0.92 EUR
4500+0.9 EUR
7500+0.89 EUR
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15000+0.87 EUR
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NVMFWS1D7N04XMT1G NVMFWS1D7N04XMT1G onsemi nvmfws1d7n04xm-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Qualification: AEC-Q101
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13+1.37 EUR
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100+1.1 EUR
250+1.03 EUR
500+0.99 EUR
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NVMFS5834NLWFT1G-UM NVMFS5834NLWFT1G-UM onsemi NTMFS5834NL-D.PDF Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Qualification: AEC-Q101
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NVMFS5834NLWFT1G-UM NVMFS5834NLWFT1G-UM onsemi NTMFS5834NL-D.PDF Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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7WBD3306DTR2G 7WBD3306DTR2G onsemi 7wbd3306-d.pdf Description: IC BUS SWITCH 1 X 1:1 8-TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-TSSOP
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7WBD3306AMUTCG 7WBD3306AMUTCG onsemi 7wbd3306-d.pdf Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
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7WBD3306MUTAG 7WBD3306MUTAG onsemi 7wbd3306-d.pdf Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
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SECO-NCP51561BADWR2G-GEVB SECO-NCP51561BADWR2G-GEVB onsemi evbum2756-d.pdf Description: APPLICATION DAUGHTER-CARD FOR NC
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP51561
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NZ8F9V1MX2WT5G NZ8F9V1MX2WT5G onsemi nz8f2v4mx2w-d.pdf Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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NZ8F9V1MX2WT5G NZ8F9V1MX2WT5G onsemi nz8f2v4mx2w-d.pdf Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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190+0.093 EUR
500+0.084 EUR
1000+0.058 EUR
2000+0.054 EUR
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NSVBASH21MX2WT5G NSVBASH21MX2WT5G onsemi bash16mx2w-d.pdf Description: DIODE STANDARD 250V 0.2A X2DFNW2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X2DFNW (1x0.6)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MM74HC164N mm74hc164-d.pdf
MM74HC164N
Hersteller: onsemi
Description: IC SR PUSH-PULL 8BIT 14-MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-MDIP
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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MM74HC138MTC MM74HC138-D.PDF
MM74HC138MTC
Hersteller: onsemi
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
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FCPF260N65FL1 fcpf260n65fl1-d.pdf
FCPF260N65FL1
Hersteller: onsemi
Description: MOSFET N-CH 650V 15A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Produkt ist nicht verfügbar
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NE555D NE555.pdf slfs022i.pdf?t.download=true&u=5oefqw FAIRS20025-1.pdf?t.download=true&u=5oefqw
NE555D
Hersteller: onsemi
Description: IC OSC SINGLE TIMER 8-SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: 555 Type, Timer/Oscillator (Single)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 16V
Supplier Device Package: 8-SOIC
Current - Supply: 7.5 mA
Produkt ist nicht verfügbar
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NE555N NE555.pdf
NE555N
Hersteller: onsemi
Description: IC OSC SINGLE TIMER 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: 555 Type, Timer/Oscillator (Single)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 16V
Supplier Device Package: 8-DIP
Current - Supply: 7.5 mA
Produkt ist nicht verfügbar
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NM93C56EM8 NM93C56.pdf
NM93C56EM8
Hersteller: onsemi
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MC34063AP description MC33063A%2C34063A.pdf
MC34063AP
Hersteller: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100Hz ~ 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-DIP
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.24V
Produkt ist nicht verfügbar
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KSA1015OBU ksa1015-d.pdf
KSA1015OBU
Hersteller: onsemi
Description: TRANS PNP 50V 0.15A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
Produkt ist nicht verfügbar
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KSA1015GRTA KSA1015.pdf
KSA1015GRTA
Hersteller: onsemi
Description: TRANS PNP 50V 0.15A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
Produkt ist nicht verfügbar
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BUT11A BUT11%28A%29.pdf
BUT11A
Hersteller: onsemi
Description: TRANS NPN 450V 5A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Produkt ist nicht verfügbar
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BUT11ATU BUT11%28A%29.pdf
BUT11ATU
Hersteller: onsemi
Description: TRANS NPN 450V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Produkt ist nicht verfügbar
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MBR3045PT MBR3035-60PT.pdf
MBR3045PT
Hersteller: onsemi
Description: DIODE ARR SCHOTT 45V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+50.66 EUR
Mindestbestellmenge: 9
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MBR3045PT MBR3035-60PT.pdf
MBR3045PT
Hersteller: onsemi
Description: DIODE ARR SCHOTT 45V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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NCL2801CDFDR2G ncl2801-d.pdf
NCL2801CDFDR2G
Hersteller: onsemi
Description: ENHANCED HIGH-EFFICIENCY POWER F
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10.5V
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Supplier Device Package: 8-SOIC
Current - Startup: 10 µA
Produkt ist nicht verfügbar
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NCL2801CDFDR2G ncl2801-d.pdf
NCL2801CDFDR2G
Hersteller: onsemi
Description: ENHANCED HIGH-EFFICIENCY POWER F
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10.5V
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Supplier Device Package: 8-SOIC
Current - Startup: 10 µA
Produkt ist nicht verfügbar
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FJY3002R fjy3002r-d.pdf
FJY3002R
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SC-89-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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1N5357B 1n5333b-d.pdf
1N5357B
Hersteller: onsemi
Description: DIODE ZENER 20V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 15.2 V
Produkt ist nicht verfügbar
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MBR1060 mbr1060-d.pdf
MBR1060
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 10A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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SB560 sb580-d.pdf
SB560
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 380pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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1N4743A 1N4736AT-D.PDF
1N4743A
Hersteller: onsemi
Description: DIODE ZENER 13V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
auf Bestellung 44185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
115+0.15 EUR
223+0.079 EUR
500+0.073 EUR
1000+0.07 EUR
3000+0.056 EUR
6000+0.05 EUR
12000+0.047 EUR
Mindestbestellmenge: 72
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BC848AWT1 BC846AWT1-D.PDF
BC848AWT1
Hersteller: onsemi
Description: TRANS NPN 30V 0.1A SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
Produkt ist nicht verfügbar
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BC848AWT1G BC846AWT1-D.PDF
BC848AWT1G
Hersteller: onsemi
Description: TRANS NPN 30V 0.1A SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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1N4004 1n4001-d.pdf
1N4004
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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1N4004 1n4001-d.pdf
1N4004
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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1N4004GP 1N4001.pdf
1N4004GP
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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BC33725 bc337-fsc-d.pdf
BC33725
Hersteller: onsemi
Description: TRANS NPN 45V 0.8A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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UJ4C075023B7S UJ4C075023B7S-D.PDF
UJ4C075023B7S
Hersteller: onsemi
Description: 750V/23MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Produkt ist nicht verfügbar
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UJ4C075023B7S UJ4C075023B7S-D.PDF
UJ4C075023B7S
Hersteller: onsemi
Description: 750V/23MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.83 EUR
10+21.33 EUR
100+20.51 EUR
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NCV8505D2T50R4G ncv8505-d.pdf
NCV8505D2T50R4G
Hersteller: onsemi
Description: IC REG LINEAR 5V 400MA D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 350 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-7
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 45 mA
Qualification: AEC-Q100
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+2.66 EUR
1500+2.59 EUR
2250+2.55 EUR
3750+2.51 EUR
5250+2.49 EUR
Mindestbestellmenge: 750
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NCV8505D2T50R4G ncv8505-d.pdf
NCV8505D2T50R4G
Hersteller: onsemi
Description: IC REG LINEAR 5V 400MA D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 350 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-7
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 45 mA
Qualification: AEC-Q100
auf Bestellung 13876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.77 EUR
10+3.58 EUR
25+3.28 EUR
100+2.95 EUR
250+2.8 EUR
Mindestbestellmenge: 4
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NVBG095N065SC1 nvbg095n065sc1-d.pdf
NVBG095N065SC1
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+8.72 EUR
Mindestbestellmenge: 800
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NVBG095N065SC1 nvbg095n065sc1-d.pdf
NVBG095N065SC1
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 6323 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18 EUR
10+12.5 EUR
100+10.68 EUR
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UJ4C075044B7S UJ4C075044B7S-D.PDF
UJ4C075044B7S
Hersteller: onsemi
Description: 750V/44MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 19200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+11.08 EUR
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UJ4C075044B7S UJ4C075044B7S-D.PDF
UJ4C075044B7S
Hersteller: onsemi
Description: 750V/44MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 19263 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.63 EUR
10+15.18 EUR
100+13.56 EUR
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NSBC114YPDP6T5G dtc114yp-d.pdf
NSBC114YPDP6T5G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-963
Packaging: Bulk
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
auf Bestellung 206000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4013+0.11 EUR
Mindestbestellmenge: 4013
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BZX55C8V2 BZX55C2V4%20-%20BZX55C56.pdf
BZX55C8V2
Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6 V
Produkt ist nicht verfügbar
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MM3Z24VT1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
MM3Z24VT1G
Hersteller: onsemi
Description: DIODE ZENER 24V 300MW SOD323
Tolerance: ±6%
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
200+2.28 EUR
Mindestbestellmenge: 200
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BZX85C18-T50R bzx85c3v3-d.pdf
BZX85C18-T50R
Hersteller: onsemi
Description: DIODE ZENER 18V 1W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6045+0.076 EUR
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BZX85C18 BZX85C3V3-C56.pdf
BZX85C18
Hersteller: onsemi
Description: DIODE ZENER 18V 1W DO41
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Produkt ist nicht verfügbar
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BZX85C18-T50R BZX85C3V3-C56.pdf
BZX85C18-T50R
Hersteller: onsemi
Description: DIODE ZENER 18V 1W DO41
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Produkt ist nicht verfügbar
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LMV358MUTAG lmv321-d.pdf
LMV358MUTAG
Hersteller: onsemi
Description: IC VOLTAGE FEEDBACK 2 CIRC 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 100µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 8-UDFN (1.8x1.2)
Number of Circuits: 2
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 76187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1237+0.36 EUR
Mindestbestellmenge: 1237
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LA1654FN-TLM-E-ON
LA1654FN-TLM-E-ON
Hersteller: onsemi
Description: TIME CODE RECEPTION IC
Packaging: Bulk
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
189+2.42 EUR
Mindestbestellmenge: 189
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BAT54C BAT54%28A%2CC%2CS%29.pdf
BAT54C
Hersteller: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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DM74ALS245AMSAX DM74ALS245A.pdf
DM74ALS245AMSAX
Hersteller: onsemi
Description: IC TXRX NON-INVERT 5.5V 20-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 15mA, 24mA
Supplier Device Package: 20-SSOP
Produkt ist nicht verfügbar
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FM27C256V120 FM27C256.pdf
FM27C256V120
Hersteller: onsemi
Description: IC EPROM 256KBIT PARALLEL 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-PLCC (14x11.46)
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NP2100SAT3G NPSERIES-D.pdf
NP2100SAT3G
Hersteller: onsemi
Description: THYRISTOR 180V 50A DO-214AA
Packaging: Bulk
Capacitance: 37pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 240V
Voltage - Off State: 180V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
auf Bestellung 9844 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1137+0.4 EUR
Mindestbestellmenge: 1137
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NP2100SBT3G NPSERIES-D.pdf
NP2100SBT3G
Hersteller: onsemi
Description: THYRISTOR 180V 80A DO-214AA
Packaging: Bulk
Capacitance: 59pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 240V
Voltage - Off State: 180V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
865+0.53 EUR
Mindestbestellmenge: 865
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NP2100SCT3G NPSERIES-D.pdf
NP2100SCT3G
Hersteller: onsemi
Description: THYRISTOR 180V 100A DO-214AA
Packaging: Bulk
Capacitance: 97pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 240V
Voltage - Off State: 180V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
auf Bestellung 1735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
699+0.65 EUR
Mindestbestellmenge: 699
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UC3844BN description UC3844%2C3845%2C2844%2C2845B.pdf
UC3844BN
Hersteller: onsemi
Description: IC REG CTRLR PWM CM 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 36V
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
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NVMFWS1D7N04XMT1G nvmfws1d7n04xm-d.pdf
NVMFWS1D7N04XMT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.94 EUR
3000+0.92 EUR
4500+0.9 EUR
7500+0.89 EUR
10500+0.88 EUR
15000+0.87 EUR
Mindestbestellmenge: 1500
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NVMFWS1D7N04XMT1G nvmfws1d7n04xm-d.pdf
NVMFWS1D7N04XMT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 22445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.9 EUR
13+1.37 EUR
25+1.24 EUR
100+1.1 EUR
250+1.03 EUR
500+0.99 EUR
Mindestbestellmenge: 10
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NVMFS5834NLWFT1G-UM NTMFS5834NL-D.PDF
NVMFS5834NLWFT1G-UM
Hersteller: onsemi
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5834NLWFT1G-UM NTMFS5834NL-D.PDF
NVMFS5834NLWFT1G-UM
Hersteller: onsemi
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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7WBD3306DTR2G 7wbd3306-d.pdf
7WBD3306DTR2G
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8-TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-TSSOP
auf Bestellung 170165 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1209+0.38 EUR
Mindestbestellmenge: 1209
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7WBD3306AMUTCG 7wbd3306-d.pdf
7WBD3306AMUTCG
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
818+0.56 EUR
Mindestbestellmenge: 818
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7WBD3306MUTAG 7wbd3306-d.pdf
7WBD3306MUTAG
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
741+0.61 EUR
Mindestbestellmenge: 741
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SECO-NCP51561BADWR2G-GEVB evbum2756-d.pdf
SECO-NCP51561BADWR2G-GEVB
Hersteller: onsemi
Description: APPLICATION DAUGHTER-CARD FOR NC
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP51561
Produkt ist nicht verfügbar
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NZ8F9V1MX2WT5G nz8f2v4mx2w-d.pdf
NZ8F9V1MX2WT5G
Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Produkt ist nicht verfügbar
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NZ8F9V1MX2WT5G nz8f2v4mx2w-d.pdf
NZ8F9V1MX2WT5G
Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
auf Bestellung 4565 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
74+0.24 EUR
190+0.093 EUR
500+0.084 EUR
1000+0.058 EUR
2000+0.054 EUR
Mindestbestellmenge: 48
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NSVBASH21MX2WT5G bash16mx2w-d.pdf
NSVBASH21MX2WT5G
Hersteller: onsemi
Description: DIODE STANDARD 250V 0.2A X2DFNW2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X2DFNW (1x0.6)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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