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NSVBASH21MX2WT5G NSVBASH21MX2WT5G onsemi bash16mx2w-d.pdf Description: DIODE STANDARD 250V 0.2A X2DFNW2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X2DFNW (1x0.6)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 6460 Stücke:
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28+0.65 EUR
56+0.32 EUR
100+0.22 EUR
500+0.17 EUR
1000+0.14 EUR
2000+0.13 EUR
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SZNZ8F9V1MX2WT5G SZNZ8F9V1MX2WT5G onsemi nz8f2v4mx2w-d.pdf Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SZNZ8F9V1MX2WT5G SZNZ8F9V1MX2WT5G onsemi nz8f2v4mx2w-d.pdf Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SZNZ8F5V1MX2WT5G SZNZ8F5V1MX2WT5G onsemi nz8f2v4mx2w-d.pdf Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
auf Bestellung 136000 Stücke:
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8000+0.088 EUR
16000+0.087 EUR
24000+0.085 EUR
40000+0.079 EUR
56000+0.071 EUR
80000+0.069 EUR
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SZNZ8F5V1MX2WT5G SZNZ8F5V1MX2WT5G onsemi nz8f2v4mx2w-d.pdf Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
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AR0145CS1C00SMKA0-CP-E AR0145CS1C00SMKA0-CP-E onsemi ar0145cs-pd-d.pdf Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Packaging: Tray
Package / Case: 47-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 2.8µm x 2.8µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 47-ODCSP (5.74x4.42)
Frames per Second: 120.0
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10+49.39 EUR
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AR0145CS1C28SMKA0-CP-E AR0145CS1C28SMKA0-CP-E onsemi ar0145cs-pd-d.pdf Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Packaging: Tray
Package / Case: 47-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 2.8µm x 2.8µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 47-ODCSP (5.74x4.42)
Frames per Second: 120.0
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SS9015CBU SS9015CBU onsemi SS9015.pdf Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 190MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
Produkt ist nicht verfügbar
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FOD3120TS FOD3120TS onsemi fod3120-d.pdf Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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CAT3200HU2-GT3 CAT3200HU2-GT3 onsemi cat3200hu2-d.pdf Description: IC REG CHARGE PUMP ADJ/5V 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 4.5V
Topology: Charge Pump
Supplier Device Package: 8-UDFN (2x2)
Synchronous Rectifier: No
Voltage - Output (Max): 6V
Voltage - Input (Min): 2.2V
Voltage - Output (Min/Fixed): 2.7V (5V)
auf Bestellung 542340 Stücke:
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MBRF10H150CTG MBRF10H150CTG onsemi mbrf10h150ct-d.pdf Description: DIODE ARR SCHOTT 150V 5A TO220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -20°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 45 µA @ 150 V
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NTZD3155CT2G-M07 onsemi Description: RECTIFIERS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MC74HC574ADTR2G MC74HC574ADTR2G onsemi mc74hc574a-d.pdf Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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MC74HC574ADTR2G MC74HC574ADTR2G onsemi mc74hc574a-d.pdf Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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MC74HC574ADTR2G-Q MC74HC574ADTR2G-Q onsemi Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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NVBG030N120M3S-IE NVBG030N120M3S-IE onsemi nvbg030n120m3s-d.pdf Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
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800+24.9 EUR
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NVBG030N120M3S-IE NVBG030N120M3S-IE onsemi nvbg030n120m3s-d.pdf Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
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10+30.74 EUR
25+28.87 EUR
100+26.81 EUR
250+25.83 EUR
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MOC3022M MOC3022M onsemi moc3023m-d.pdf Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 509273 Stücke:
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14+1.28 EUR
50+0.71 EUR
100+0.66 EUR
500+0.55 EUR
1000+0.51 EUR
2000+0.48 EUR
5000+0.45 EUR
10000+0.43 EUR
25000+0.41 EUR
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NE5532D NE5532D onsemi NE5532.pdf Description: IC OPAMP GP 2 CIRCUIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Current - Supply: 8mA
Slew Rate: 9V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 200 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 16-SOIC
Number of Circuits: 2
Current - Output / Channel: 38 mA
Voltage - Supply Span (Min): 6 V
Voltage - Supply Span (Max): 40 V
Produkt ist nicht verfügbar
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HUF75333S3 HUF75333S3 onsemi HUF75333%28G3%2CP3%2CS3S%2CS3%29.pdf Description: MOSFET N-CH 55V 66A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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RS1G RS1G onsemi rs1m-d.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 15000 Stücke:
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7500+0.12 EUR
15000+0.11 EUR
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RS1G RS1G onsemi rs1m-d.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 18150 Stücke:
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36+0.49 EUR
65+0.27 EUR
500+0.2 EUR
1000+0.17 EUR
2000+0.16 EUR
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PZTA42 PZTA42 onsemi PZTA42T1G.pdf Description: TRANS NPN 300V 0.5A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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MC74VHC259DTG MC74VHC259DTG onsemi mc74vhc259-d.pdf Description: IC D-TYPE ADDR 1:8 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.9ns
Supplier Device Package: 16-TSSOP
auf Bestellung 68216 Stücke:
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685+0.67 EUR
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MC74VHC259DG MC74VHC259DG onsemi mc74vhc259-d.pdf Description: IC D-TYPE ADDR 1:8 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.9ns
Supplier Device Package: 16-SOIC
auf Bestellung 19488 Stücke:
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660+0.68 EUR
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MC74ACT259DR2 MC74ACT259DR2 onsemi mc74ac259-d.pdf Description: IC D-TYPE ADDR 1:8 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 6.5ns
Supplier Device Package: 16-SOIC
auf Bestellung 1500 Stücke:
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505+0.9 EUR
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MC14050BDTR2G MC14050BDTR2G onsemi mc14049b-d.pdf Description: IC BUFF NON-INVERT 18V 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 18V
Number of Bits per Element: 1
Current - Output High, Low: 10mA, 40mA
Supplier Device Package: 16-TSSOP
auf Bestellung 55916 Stücke:
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771+0.59 EUR
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SSR1N60BTM SSR1N60BTM onsemi SSR1N60B%2CSSU1N60B.pdf Description: MOSFET N-CH 600V 900MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Produkt ist nicht verfügbar
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SSR1N60BTM-WS SSR1N60BTM-WS onsemi SSR1N60B%2CSSU1N60B.pdf Description: MOSFET N-CH 600V 900MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
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MBRF20100CT MBRF20100CT onsemi mbrf20100ct-d.pdf description Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
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MBRF20100CT MBRF20100CT onsemi mbrf20100ct-d.pdf description Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
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1N5349B 1N5349B onsemi 1n5333b-d.pdf description Description: DIODE ZENER 12V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 9.1 V
Produkt ist nicht verfügbar
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UJ4C075033L8S UJ4C075033L8S onsemi UJ4C075033L8S-D.PDF Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
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UJ4C075033L8S UJ4C075033L8S onsemi UJ4C075033L8S-D.PDF Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
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2N2907A onsemi 2N%2CFTSO%2CPN%20NPN%20Type%20%2810p%29.pdf Description: TRANS PNP 40V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 400 mW
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MBR2060CTG MBR2060CTG onsemi MBR2060CT-D%2C%20MBR2090CT.pdf Description: DIODE ARRAY SCHOT 60V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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LM2904D LM2904D onsemi LM358-D.PDF Description: OPERATIONAL AMPLIFIER, SINGLE SU
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C (TA)
Current - Supply: 750µA (x2 Channels)
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Produkt ist nicht verfügbar
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FSQ0165RLX FSQ0165RLX onsemi fsq0365-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Power (Watts): 15 W
Produkt ist nicht verfügbar
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NTTFS6H880NLTAG NTTFS6H880NLTAG onsemi nttfs6h880nl-d.pdf Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
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NVTFS6H880NLWFTAG NVTFS6H880NLWFTAG onsemi nvtfs6h880nl-d.pdf Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
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NVTFS6H880NLTAG NVTFS6H880NLTAG onsemi NVTFS6H880NL-D.PDF Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
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NVTFS6H880NWFTAG NVTFS6H880NWFTAG onsemi nvtfs6h880n-d.pdf Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
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NVTFS6H880NWFTAG NVTFS6H880NWFTAG onsemi nvtfs6h880n-d.pdf Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
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NTTFS6H880NTAG NTTFS6H880NTAG onsemi nttfs6h880n-d.pdf Description: T8 80V U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
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NTTFS6H880NTAG NTTFS6H880NTAG onsemi nttfs6h880n-d.pdf Description: T8 80V U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
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MC74HC573ADTG MC74HC573ADTG onsemi mc74hc573a-d.pdf description Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Delay Time - Propagation: 26ns
Supplier Device Package: 20-TSSOP
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NE555N NE555N onsemi NE555.pdf Description: IC OSC SINGLE TIMER 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: 555 Type, Timer/Oscillator (Single)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 16V
Supplier Device Package: 8-DIP
Current - Supply: 7.5 mA
Produkt ist nicht verfügbar
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MMBT2907A RFG MMBT2907A RFG onsemi MMBT2907A_C2001.pdf Description: TRANS PNP 60V 0.8A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
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MMBT2907A MMBT2907A onsemi PZT2907A-D.PDF Description: TRANS PNP 60V 0.8A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
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MOC3023 MOC3023 onsemi MOC3021-23.pdf Description: OPTOISOLTR 5.3KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Voltage - Isolation: 5300Vrms
Current - Hold (Ih): 100µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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SS36 SS36 onsemi ss39-d.pdf Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SS36 SS36 onsemi ss39-d.pdf Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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MM74HC14SJX MM74HC14SJX onsemi mm74hc14-d.pdf Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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LM339AM LM339AM onsemi lm339a-d.pdf Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: DTL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 2mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Produkt ist nicht verfügbar
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FQP12N60C FQP12N60C onsemi fqp12n60c-d.pdf Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Produkt ist nicht verfügbar
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HGT1S12N60A4DS HGT1S12N60A4DS onsemi hgt1s12n60a4ds-d.pdf Description: IGBT 600V 54A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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BC807-25LT1G BC807-25LT1G onsemi bc807-16lt1-d.pdf Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
auf Bestellung 4521590 Stücke:
Lieferzeit 10-14 Tag (e)
15000+0.03 EUR
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FCD850N80Z FCD850N80Z onsemi fcu850n80z-d.pdf Description: MOSFET N-CH 800V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
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FCD850N80Z FCD850N80Z onsemi fcu850n80z-d.pdf Description: MOSFET N-CH 800V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
auf Bestellung 18066 Stücke:
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10+3.19 EUR
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FCP650N80Z FCP650N80Z onsemi fcp650n80z-d.pdf Description: MOSFET N-CH 800V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 100 V
auf Bestellung 1954 Stücke:
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168+2.72 EUR
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NSVBASH21MX2WT5G bash16mx2w-d.pdf
NSVBASH21MX2WT5G
Hersteller: onsemi
Description: DIODE STANDARD 250V 0.2A X2DFNW2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X2DFNW (1x0.6)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 6460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
56+0.32 EUR
100+0.22 EUR
500+0.17 EUR
1000+0.14 EUR
2000+0.13 EUR
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SZNZ8F9V1MX2WT5G nz8f2v4mx2w-d.pdf
SZNZ8F9V1MX2WT5G
Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
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SZNZ8F9V1MX2WT5G nz8f2v4mx2w-d.pdf
SZNZ8F9V1MX2WT5G
Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SZNZ8F5V1MX2WT5G nz8f2v4mx2w-d.pdf
SZNZ8F5V1MX2WT5G
Hersteller: onsemi
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
auf Bestellung 136000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.088 EUR
16000+0.087 EUR
24000+0.085 EUR
40000+0.079 EUR
56000+0.071 EUR
80000+0.069 EUR
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SZNZ8F5V1MX2WT5G nz8f2v4mx2w-d.pdf
SZNZ8F5V1MX2WT5G
Hersteller: onsemi
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
auf Bestellung 136000 Stücke:
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Anzahl Preis
34+0.53 EUR
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AR0145CS1C00SMKA0-CP-E ar0145cs-pd-d.pdf
AR0145CS1C00SMKA0-CP-E
Hersteller: onsemi
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Packaging: Tray
Package / Case: 47-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 2.8µm x 2.8µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 47-ODCSP (5.74x4.42)
Frames per Second: 120.0
auf Bestellung 50 Stücke:
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Anzahl Preis
1+60.58 EUR
10+49.39 EUR
25+46.6 EUR
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AR0145CS1C28SMKA0-CP-E ar0145cs-pd-d.pdf
AR0145CS1C28SMKA0-CP-E
Hersteller: onsemi
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Packaging: Tray
Package / Case: 47-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 2.8µm x 2.8µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 47-ODCSP (5.74x4.42)
Frames per Second: 120.0
auf Bestellung 50 Stücke:
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Anzahl Preis
1+60.58 EUR
10+49.39 EUR
25+46.6 EUR
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SS9015CBU SS9015.pdf
SS9015CBU
Hersteller: onsemi
Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 190MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
Produkt ist nicht verfügbar
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FOD3120TS fod3120-d.pdf
FOD3120TS
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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CAT3200HU2-GT3 cat3200hu2-d.pdf
CAT3200HU2-GT3
Hersteller: onsemi
Description: IC REG CHARGE PUMP ADJ/5V 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 4.5V
Topology: Charge Pump
Supplier Device Package: 8-UDFN (2x2)
Synchronous Rectifier: No
Voltage - Output (Max): 6V
Voltage - Input (Min): 2.2V
Voltage - Output (Min/Fixed): 2.7V (5V)
auf Bestellung 542340 Stücke:
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Anzahl Preis
235+1.93 EUR
Mindestbestellmenge: 235
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MBRF10H150CTG mbrf10h150ct-d.pdf
MBRF10H150CTG
Hersteller: onsemi
Description: DIODE ARR SCHOTT 150V 5A TO220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -20°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 45 µA @ 150 V
auf Bestellung 103959 Stücke:
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Anzahl Preis
329+1.38 EUR
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NTZD3155CT2G-M07
Hersteller: onsemi
Description: RECTIFIERS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MC74HC574ADTR2G mc74hc574a-d.pdf
MC74HC574ADTR2G
Hersteller: onsemi
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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MC74HC574ADTR2G mc74hc574a-d.pdf
MC74HC574ADTR2G
Hersteller: onsemi
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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MC74HC574ADTR2G-Q
MC74HC574ADTR2G-Q
Hersteller: onsemi
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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NVBG030N120M3S-IE nvbg030n120m3s-d.pdf
NVBG030N120M3S-IE
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+24.9 EUR
Mindestbestellmenge: 800
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NVBG030N120M3S-IE nvbg030n120m3s-d.pdf
NVBG030N120M3S-IE
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.24 EUR
10+30.74 EUR
25+28.87 EUR
100+26.81 EUR
250+25.83 EUR
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MOC3022M moc3023m-d.pdf
MOC3022M
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 509273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
50+0.71 EUR
100+0.66 EUR
500+0.55 EUR
1000+0.51 EUR
2000+0.48 EUR
5000+0.45 EUR
10000+0.43 EUR
25000+0.41 EUR
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NE5532D NE5532.pdf
NE5532D
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Current - Supply: 8mA
Slew Rate: 9V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 200 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 16-SOIC
Number of Circuits: 2
Current - Output / Channel: 38 mA
Voltage - Supply Span (Min): 6 V
Voltage - Supply Span (Max): 40 V
Produkt ist nicht verfügbar
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HUF75333S3 HUF75333%28G3%2CP3%2CS3S%2CS3%29.pdf
HUF75333S3
Hersteller: onsemi
Description: MOSFET N-CH 55V 66A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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RS1G rs1m-d.pdf
RS1G
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7500+0.12 EUR
15000+0.11 EUR
Mindestbestellmenge: 7500
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RS1G rs1m-d.pdf
RS1G
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 18150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
65+0.27 EUR
500+0.2 EUR
1000+0.17 EUR
2000+0.16 EUR
Mindestbestellmenge: 36
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PZTA42 PZTA42T1G.pdf
PZTA42
Hersteller: onsemi
Description: TRANS NPN 300V 0.5A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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MC74VHC259DTG mc74vhc259-d.pdf
MC74VHC259DTG
Hersteller: onsemi
Description: IC D-TYPE ADDR 1:8 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.9ns
Supplier Device Package: 16-TSSOP
auf Bestellung 68216 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
685+0.67 EUR
Mindestbestellmenge: 685
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MC74VHC259DG mc74vhc259-d.pdf
MC74VHC259DG
Hersteller: onsemi
Description: IC D-TYPE ADDR 1:8 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.9ns
Supplier Device Package: 16-SOIC
auf Bestellung 19488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
660+0.68 EUR
Mindestbestellmenge: 660
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MC74ACT259DR2 mc74ac259-d.pdf
MC74ACT259DR2
Hersteller: onsemi
Description: IC D-TYPE ADDR 1:8 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 6.5ns
Supplier Device Package: 16-SOIC
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
505+0.9 EUR
Mindestbestellmenge: 505
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MC14050BDTR2G mc14049b-d.pdf
MC14050BDTR2G
Hersteller: onsemi
Description: IC BUFF NON-INVERT 18V 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 18V
Number of Bits per Element: 1
Current - Output High, Low: 10mA, 40mA
Supplier Device Package: 16-TSSOP
auf Bestellung 55916 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
771+0.59 EUR
Mindestbestellmenge: 771
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SSR1N60BTM SSR1N60B%2CSSU1N60B.pdf
SSR1N60BTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 900MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Produkt ist nicht verfügbar
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SSR1N60BTM-WS SSR1N60B%2CSSU1N60B.pdf
SSR1N60BTM-WS
Hersteller: onsemi
Description: MOSFET N-CH 600V 900MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Produkt ist nicht verfügbar
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MBRF20100CT description mbrf20100ct-d.pdf
MBRF20100CT
Hersteller: onsemi
Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
auf Bestellung 93756 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
189+2.42 EUR
Mindestbestellmenge: 189
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MBRF20100CT description mbrf20100ct-d.pdf
MBRF20100CT
Hersteller: onsemi
Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Produkt ist nicht verfügbar
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1N5349B description 1n5333b-d.pdf
1N5349B
Hersteller: onsemi
Description: DIODE ZENER 12V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 9.1 V
Produkt ist nicht verfügbar
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UJ4C075033L8S UJ4C075033L8S-D.PDF
UJ4C075033L8S
Hersteller: onsemi
Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+12.86 EUR
Mindestbestellmenge: 2000
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UJ4C075033L8S UJ4C075033L8S-D.PDF
UJ4C075033L8S
Hersteller: onsemi
Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 11545 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.27 EUR
10+17.16 EUR
100+15.75 EUR
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2N2907A 2N%2CFTSO%2CPN%20NPN%20Type%20%2810p%29.pdf
Hersteller: onsemi
Description: TRANS PNP 40V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 400 mW
Produkt ist nicht verfügbar
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MBR2060CTG MBR2060CT-D%2C%20MBR2090CT.pdf
MBR2060CTG
Hersteller: onsemi
Description: DIODE ARRAY SCHOT 60V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 72153 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
257+1.78 EUR
Mindestbestellmenge: 257
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LM2904D LM358-D.PDF
LM2904D
Hersteller: onsemi
Description: OPERATIONAL AMPLIFIER, SINGLE SU
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C (TA)
Current - Supply: 750µA (x2 Channels)
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Produkt ist nicht verfügbar
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FSQ0165RLX fsq0365-d.pdf
FSQ0165RLX
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Power (Watts): 15 W
Produkt ist nicht verfügbar
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NTTFS6H880NLTAG nttfs6h880nl-d.pdf
NTTFS6H880NLTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
auf Bestellung 7327 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
20+0.89 EUR
100+0.58 EUR
500+0.45 EUR
Mindestbestellmenge: 13
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NVTFS6H880NLWFTAG nvtfs6h880nl-d.pdf
NVTFS6H880NLWFTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 2218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
15+1.18 EUR
100+0.78 EUR
500+0.61 EUR
Mindestbestellmenge: 10
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NVTFS6H880NLTAG NVTFS6H880NL-D.PDF
NVTFS6H880NLTAG
Hersteller: onsemi
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
21+0.86 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
2000+0.35 EUR
5000+0.31 EUR
10000+0.29 EUR
Mindestbestellmenge: 13
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NVTFS6H880NWFTAG nvtfs6h880n-d.pdf
NVTFS6H880NWFTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVTFS6H880NWFTAG nvtfs6h880n-d.pdf
NVTFS6H880NWFTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NTTFS6H880NTAG nttfs6h880n-d.pdf
NTTFS6H880NTAG
Hersteller: onsemi
Description: T8 80V U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Produkt ist nicht verfügbar
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NTTFS6H880NTAG nttfs6h880n-d.pdf
NTTFS6H880NTAG
Hersteller: onsemi
Description: T8 80V U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Produkt ist nicht verfügbar
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MC74HC573ADTG description mc74hc573a-d.pdf
MC74HC573ADTG
Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Delay Time - Propagation: 26ns
Supplier Device Package: 20-TSSOP
auf Bestellung 13768 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
742+0.61 EUR
Mindestbestellmenge: 742
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NE555N NE555.pdf
NE555N
Hersteller: onsemi
Description: IC OSC SINGLE TIMER 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: 555 Type, Timer/Oscillator (Single)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 16V
Supplier Device Package: 8-DIP
Current - Supply: 7.5 mA
Produkt ist nicht verfügbar
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MMBT2907A RFG MMBT2907A_C2001.pdf
MMBT2907A RFG
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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MMBT2907A PZT2907A-D.PDF
MMBT2907A
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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MOC3023 MOC3021-23.pdf
MOC3023
Hersteller: onsemi
Description: OPTOISOLTR 5.3KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Voltage - Isolation: 5300Vrms
Current - Hold (Ih): 100µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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SS36 ss39-d.pdf
SS36
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.36 EUR
Mindestbestellmenge: 3000
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SS36 ss39-d.pdf
SS36
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
auf Bestellung 5434 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
32+0.56 EUR
100+0.54 EUR
500+0.47 EUR
1000+0.44 EUR
Mindestbestellmenge: 24
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MM74HC14SJX mm74hc14-d.pdf
MM74HC14SJX
Hersteller: onsemi
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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LM339AM lm339a-d.pdf
LM339AM
Hersteller: onsemi
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: DTL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 2mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Produkt ist nicht verfügbar
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FQP12N60C fqp12n60c-d.pdf
FQP12N60C
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Produkt ist nicht verfügbar
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HGT1S12N60A4DS hgt1s12n60a4ds-d.pdf
HGT1S12N60A4DS
Hersteller: onsemi
Description: IGBT 600V 54A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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BC807-25LT1G bc807-16lt1-d.pdf
BC807-25LT1G
Hersteller: onsemi
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
auf Bestellung 4521590 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.03 EUR
Mindestbestellmenge: 15000
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FCD850N80Z fcu850n80z-d.pdf
FCD850N80Z
Hersteller: onsemi
Description: MOSFET N-CH 800V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.54 EUR
Mindestbestellmenge: 2500
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FCD850N80Z fcu850n80z-d.pdf
FCD850N80Z
Hersteller: onsemi
Description: MOSFET N-CH 800V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
auf Bestellung 18066 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.89 EUR
10+3.19 EUR
100+2.21 EUR
500+1.88 EUR
Mindestbestellmenge: 4
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FCP650N80Z fcp650n80z-d.pdf
FCP650N80Z
Hersteller: onsemi
Description: MOSFET N-CH 800V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 100 V
auf Bestellung 1954 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
168+2.72 EUR
Mindestbestellmenge: 168
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