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FDD3N40TM FDD3N40TM onsemi FDU3N40-D.pdf Description: MOSFET N-CH 400V 2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+0.43 EUR
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FDD6N25TF FDD6N25TF onsemi FDD_U6N25.pdf Description: MOSFET N-CH 250V 4.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDD6N25TM FDD6N25TM onsemi FDD6N25-D.pdf Description: MOSFET N-CH 250V 4.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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FDMC8554 FDMC8554 onsemi ONSM-S-A0003590500-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 20V 16.5A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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3000+0.96 EUR
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FDMC8878 FDMC8878 onsemi FAIR-S-A0002365638-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V
Power Dissipation (Max): 2.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Produkt ist nicht verfügbar
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FDPF18N50 FDPF18N50 onsemi fdpf18n50t-d.pdf Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 6371 Stücke:
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3+6.27 EUR
50+3.2 EUR
100+2.91 EUR
500+2.39 EUR
1000+2.22 EUR
2000+2.15 EUR
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FDPF20N50 FDPF20N50 onsemi fdpf20n50-d.pdf Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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FDPF39N20 FDPF39N20 onsemi fdpf39n20tldtu-d.pdf Description: MOSFET N-CH 200V 39A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 19.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 25 V
auf Bestellung 3201 Stücke:
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5+4.31 EUR
50+2.14 EUR
100+1.93 EUR
500+1.56 EUR
1000+1.44 EUR
2000+1.34 EUR
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FFP08S60STU FFP08S60STU onsemi ffp08s60s-d.pdf Description: DIODE GEN PURP 600V 8A TO220-2
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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FOD617A300 FOD617A300 onsemi fod617,814,817.pdf Description: OPTOISOLATOR 5KV TRANSISTOR 4DIP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 80% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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FOD617C300 FOD617C300 onsemi fod617,814,817.pdf Description: OPTOISOLATOR 5KV TRANSISTOR 4DIP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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FOD617D300 FOD617D300 onsemi fod617,814,817.pdf Description: OPTOISOLATOR 5KV TRANSISTOR 4DIP
Voltage - Output (Max): 70V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3µs
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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FSQ0165RN FSQ0165RN onsemi fsq0365-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 55kHz ~ 67kHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Power (Watts): 15 W
Part Status: Last Time Buy
Control Features: Sync
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Produkt ist nicht verfügbar
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FSQ0265RN FSQ0265RN onsemi fsq0365-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Last Time Buy
Power (Watts): 20 W
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FXL2TD245L10X FXL2TD245L10X onsemi fxl2td245-d.pdf Description: IC XLTR VL BIDIR 10-MICROPAK
Packaging: Tape & Reel (TR)
Features: Power-Off Protection
Package / Case: 10-UFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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FAN1540BMPX onsemi FAN1539B,%2040B%20Rev1.0.0.pdf Description: IC REG LINEAR 3.3V 1.3A 6MLP
Produkt ist nicht verfügbar
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FDB8832 FDB8832 onsemi fdb8832-d.pdf Description: MOSFET N-CH 30V 34A/80A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 15 V
Produkt ist nicht verfügbar
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FDD3N40TF FDD3N40TF onsemi FDD_U3N40_RevA.pdf Description: MOSFET N-CH 400V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Produkt ist nicht verfügbar
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FDD3N40TM FDD3N40TM onsemi FDU3N40-D.pdf Description: MOSFET N-CH 400V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
auf Bestellung 4148 Stücke:
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FDMC8554 FDMC8554 onsemi ONSM-S-A0003590500-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 20V 16.5A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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FDMC8878 FDMC8878 onsemi FAIR-S-A0002365638-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 490 Stücke:
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10+1.99 EUR
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FXL2TD245L10X FXL2TD245L10X onsemi fxl2td245-d.pdf Description: IC XLTR VL BIDIR 10-MICROPAK
Features: Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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1N4732ATR 1N4732ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 4.7V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 19356 Stücke:
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42+0.42 EUR
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500+0.12 EUR
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1N4733ATR 1N4733ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 5.1V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N4734ATR 1N4734ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 5.6V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
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1N4737ATR 1N4737ATR onsemi 1N4736AT-D.PDF Description: DIODE ZENER 7.5V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
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1N4738ATR 1N4738ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 8.2V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
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1N4740ATR 1N4740ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 10V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
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1N4741ATR 1N4741ATR onsemi 1N4736AT-D.PDF Description: DIODE ZENER 11V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
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1N4742ATR 1N4742ATR onsemi 1N4736AT-D.PDF Description: DIODE ZENER 12V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
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1N4746ATR 1N4746ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 18V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
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1N4747ATR 1N4747ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 20V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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1N4748ATR 1N4748ATR onsemi 1N4736AT-D.PDF Description: DIODE ZENER 22V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
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1N4750ATR 1N4750ATR onsemi 1N4736AT-D.PDF Description: DIODE ZENER 27V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
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1N5229BTR 1N5229BTR onsemi 1n5221b-d.pdf Description: DIODE ZENER 4.3V 500MW DO35
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
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1N5231BTR 1N5231BTR onsemi 1N5221B-D.PDF Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5233BTR 1N5233BTR onsemi 1N5221B-D.PDF Description: DIODE ZENER 6V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
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1N5235BTR 1N5235BTR onsemi 1N5221B-D.PDF Description: DIODE ZENER 6.8V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
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1N5236BTR 1N5236BTR onsemi 1N5221B-D.PDF Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
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1N5240BTR 1N5240BTR onsemi 1n5221b-d.pdf Description: DIODE ZENER 10V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
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1N752ATR 1N752ATR onsemi 1N746A-759A,4370A-4372A.pdf Description: DIODE ZENER 5.6V 500MW DO35
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 11 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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1N759ATR 1N759ATR onsemi 1N746A-759A%2C4370A-4372A.pdf Description: DIODE ZENER 12V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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74AC273SCX 74AC273SCX onsemi 74AC273%2C%2074ACT273.pdf Description: IC FF D-TYPE SINGLE 8BIT 20SOIC
Number of Bits per Element: 8
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Supplier Device Package: 20-SOIC
Input Capacitance: 4.5 pF
Clock Frequency: 175 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Iq): 40 µA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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74ACT245SCX 74ACT245SCX onsemi 74ACT245-D.pdf Description: IC TXRX 4.5V/5.5V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
Part Status: Active
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BC33725TA BC33725TA onsemi BC337-FSC-D.PDF Description: TRANS NPN 45V 0.8A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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BC33740TA BC33740TA onsemi BC337-FSC-D.PDF Description: TRANS NPN 45V 0.8A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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BS170-D27Z BS170-D27Z onsemi MMBF170-D.PDF Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 830mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
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FQB34N20LTM FQB34N20LTM onsemi fqb34n20l-d.pdf Description: MOSFET N-CH 200V 31A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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ADT7467BBZEVB onsemi adt7467-d.pdf Description: BOARD EVALUATION FOR ADT7467
Sensitivity: ±1.5°C
Packaging: Box
Contents: Board(s), Cable(s)
Sensing Range: -40°C ~ 120°C
Embedded: No
Supplied Contents: Board(s), Cable(s)
Utilized IC / Part: ADT7467
Sensor Type: Temperature
Voltage - Supply: 3V ~ 5.5V
Interface: SMBus (2-Wire/I2C)
Produkt ist nicht verfügbar
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NCP1521BSNT1G NCP1521BSNT1G onsemi ncp1521b-d.pdf Description: IC REG BUCK ADJ 600MA 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 5-TSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.9V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
Produkt ist nicht verfügbar
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NCP1521BMUTBG NCP1521BMUTBG onsemi ncp1521b-d.pdf Description: IC REG BUCK ADJ 600MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 6-UDFN (2x2)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.9V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
Produkt ist nicht verfügbar
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NCP1521BSNT1G NCP1521BSNT1G onsemi ncp1521b-d.pdf Description: IC REG BUCK ADJ 600MA 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 5-TSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.9V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
Produkt ist nicht verfügbar
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FDB14N30TM FDB14N30TM onsemi fdb14n30-d.pdf Description: MOSFET N-CH 300V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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FDFMA2P857 FDFMA2P857 onsemi FDFMA2P857_Rev_B2.pdf Description: MOSFET P-CH 20V 3A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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FDMA1023PZ FDMA1023PZ onsemi fdma1023pz-d.pdf Description: MOSFET 2P-CH 20V 3.7A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
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FDZ291P FDZ291P onsemi FDZ291P.pdf Description: MOSFET P-CH 20V 4.6A 9BGA
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FMS6502MTC24X FMS6502MTC24X onsemi FMS6502-D.pdf Description: IC VIDEO SWITCH 8IN/6OUT 24TSSOP
Packaging: Tape & Reel (TR)
Features: I2C
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
-3db Bandwidth: 115MHz
Supplier Device Package: 24-TSSOP
Voltage - Supply, Single (V+): 3.135V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 8:6
Part Status: Obsolete
Number of Channels: 1
Produkt ist nicht verfügbar
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FXL4TD245BQX FXL4TD245BQX onsemi fxl4td245-d.pdf Description: IC XLTR VL BIDIR 16-DQFN
Packaging: Tape & Reel (TR)
Features: Power-Off Protection
Package / Case: 16-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-DQFN (2.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 1
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FDB14N30TM FDB14N30TM onsemi fdb14n30-d.pdf Description: MOSFET N-CH 300V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FDMA1023PZ FDMA1023PZ onsemi fdma1023pz-d.pdf Description: MOSFET 2P-CH 20V 3.7A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
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100+0.89 EUR
500+0.69 EUR
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FDD3N40TM FDU3N40-D.pdf
FDD3N40TM
Hersteller: onsemi
Description: MOSFET N-CH 400V 2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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2500+0.43 EUR
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FDD6N25TF FDD_U6N25.pdf
FDD6N25TF
Hersteller: onsemi
Description: MOSFET N-CH 250V 4.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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FDD6N25TM FDD6N25-D.pdf
FDD6N25TM
Hersteller: onsemi
Description: MOSFET N-CH 250V 4.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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FDMC8554 ONSM-S-A0003590500-1.pdf?t.download=true&u=5oefqw
FDMC8554
Hersteller: onsemi
Description: MOSFET N-CH 20V 16.5A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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FDMC8878 FAIR-S-A0002365638-1.pdf?t.download=true&u=5oefqw
FDMC8878
Hersteller: onsemi
Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V
Power Dissipation (Max): 2.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Produkt ist nicht verfügbar
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FDPF18N50 fdpf18n50t-d.pdf
FDPF18N50
Hersteller: onsemi
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
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3+6.27 EUR
50+3.2 EUR
100+2.91 EUR
500+2.39 EUR
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FDPF20N50 fdpf20n50-d.pdf
FDPF20N50
Hersteller: onsemi
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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FDPF39N20 fdpf39n20tldtu-d.pdf
FDPF39N20
Hersteller: onsemi
Description: MOSFET N-CH 200V 39A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 19.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 25 V
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5+4.31 EUR
50+2.14 EUR
100+1.93 EUR
500+1.56 EUR
1000+1.44 EUR
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FFP08S60STU ffp08s60s-d.pdf
FFP08S60STU
Hersteller: onsemi
Description: DIODE GEN PURP 600V 8A TO220-2
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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FOD617A300 fod617,814,817.pdf
FOD617A300
Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRANSISTOR 4DIP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 80% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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FOD617C300 fod617,814,817.pdf
FOD617C300
Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRANSISTOR 4DIP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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FOD617D300 fod617,814,817.pdf
FOD617D300
Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRANSISTOR 4DIP
Voltage - Output (Max): 70V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3µs
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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FSQ0165RN fsq0365-d.pdf
FSQ0165RN
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 55kHz ~ 67kHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Power (Watts): 15 W
Part Status: Last Time Buy
Control Features: Sync
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Produkt ist nicht verfügbar
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FSQ0265RN fsq0365-d.pdf
FSQ0265RN
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Last Time Buy
Power (Watts): 20 W
Produkt ist nicht verfügbar
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FXL2TD245L10X fxl2td245-d.pdf
FXL2TD245L10X
Hersteller: onsemi
Description: IC XLTR VL BIDIR 10-MICROPAK
Packaging: Tape & Reel (TR)
Features: Power-Off Protection
Package / Case: 10-UFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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FAN1540BMPX FAN1539B,%2040B%20Rev1.0.0.pdf
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 1.3A 6MLP
Produkt ist nicht verfügbar
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FDB8832 fdb8832-d.pdf
FDB8832
Hersteller: onsemi
Description: MOSFET N-CH 30V 34A/80A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 15 V
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FDD3N40TF FDD_U3N40_RevA.pdf
FDD3N40TF
Hersteller: onsemi
Description: MOSFET N-CH 400V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Produkt ist nicht verfügbar
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FDD3N40TM FDU3N40-D.pdf
FDD3N40TM
Hersteller: onsemi
Description: MOSFET N-CH 400V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
auf Bestellung 4148 Stücke:
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AnzahlPreis
13+1.41 EUR
18+1.02 EUR
100+0.69 EUR
500+0.54 EUR
1000+0.49 EUR
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FDMC8554 ONSM-S-A0003590500-1.pdf?t.download=true&u=5oefqw
FDMC8554
Hersteller: onsemi
Description: MOSFET N-CH 20V 16.5A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 14550 Stücke:
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AnzahlPreis
7+2.8 EUR
10+1.89 EUR
100+1.34 EUR
500+1.09 EUR
1000+1.01 EUR
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FDMC8878 FAIR-S-A0002365638-1.pdf?t.download=true&u=5oefqw
FDMC8878
Hersteller: onsemi
Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 490 Stücke:
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AnzahlPreis
6+3.12 EUR
10+1.99 EUR
100+1.34 EUR
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FXL2TD245L10X fxl2td245-d.pdf
FXL2TD245L10X
Hersteller: onsemi
Description: IC XLTR VL BIDIR 10-MICROPAK
Features: Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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1N4732ATR 1n4736at-d.pdf
1N4732ATR
Hersteller: onsemi
Description: DIODE ZENER 4.7V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 19356 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
42+0.42 EUR
70+0.25 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
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1N4733ATR 1n4736at-d.pdf
1N4733ATR
Hersteller: onsemi
Description: DIODE ZENER 5.1V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 415153 Stücke:
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AnzahlPreis
42+0.42 EUR
70+0.25 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
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1N4734ATR 1n4736at-d.pdf
1N4734ATR
Hersteller: onsemi
Description: DIODE ZENER 5.6V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
auf Bestellung 42869 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
42+0.42 EUR
69+0.26 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
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1N4737ATR 1N4736AT-D.PDF
1N4737ATR
Hersteller: onsemi
Description: DIODE ZENER 7.5V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
auf Bestellung 6694 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
42+0.42 EUR
69+0.26 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
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1N4738ATR 1n4736at-d.pdf
1N4738ATR
Hersteller: onsemi
Description: DIODE ZENER 8.2V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
auf Bestellung 15611 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
42+0.42 EUR
70+0.25 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
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1N4740ATR 1n4736at-d.pdf
1N4740ATR
Hersteller: onsemi
Description: DIODE ZENER 10V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
auf Bestellung 67637 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
42+0.42 EUR
69+0.26 EUR
110+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
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1N4741ATR 1N4736AT-D.PDF
1N4741ATR
Hersteller: onsemi
Description: DIODE ZENER 11V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
auf Bestellung 4911 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
72+0.25 EUR
121+0.15 EUR
231+0.076 EUR
500+0.075 EUR
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1N4742ATR 1N4736AT-D.PDF
1N4742ATR
Hersteller: onsemi
Description: DIODE ZENER 12V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
auf Bestellung 85943 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
42+0.42 EUR
69+0.26 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 42 Stücke
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1N4746ATR 1n4736at-d.pdf
1N4746ATR
Hersteller: onsemi
Description: DIODE ZENER 18V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
auf Bestellung 9333 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
112+0.16 EUR
154+0.11 EUR
243+0.073 EUR
500+0.072 EUR
1000+0.071 EUR
Mindestbestellmenge: 112 Stücke
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1N4747ATR 1n4736at-d.pdf
1N4747ATR
Hersteller: onsemi
Description: DIODE ZENER 20V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
auf Bestellung 26699 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
112+0.16 EUR
186+0.095 EUR
233+0.076 EUR
500+0.07 EUR
1000+0.068 EUR
Mindestbestellmenge: 112 Stücke
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1N4748ATR 1N4736AT-D.PDF
1N4748ATR
Hersteller: onsemi
Description: DIODE ZENER 22V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
auf Bestellung 48750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
42+0.42 EUR
70+0.25 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 42 Stücke
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1N4750ATR 1N4736AT-D.PDF
1N4750ATR
Hersteller: onsemi
Description: DIODE ZENER 27V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
auf Bestellung 18260 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
77+0.23 EUR
125+0.14 EUR
233+0.076 EUR
500+0.074 EUR
1000+0.073 EUR
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1N5229BTR 1n5221b-d.pdf
1N5229BTR
Hersteller: onsemi
Description: DIODE ZENER 4.3V 500MW DO35
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 12068 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
100+0.18 EUR
186+0.095 EUR
387+0.046 EUR
500+0.043 EUR
1000+0.04 EUR
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1N5231BTR 1N5221B-D.PDF
1N5231BTR
Hersteller: onsemi
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
auf Bestellung 112012 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
72+0.25 EUR
112+0.16 EUR
180+0.098 EUR
500+0.071 EUR
1000+0.062 EUR
2000+0.055 EUR
Mindestbestellmenge: 72 Stücke
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1N5233BTR 1N5221B-D.PDF
1N5233BTR
Hersteller: onsemi
Description: DIODE ZENER 6V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
auf Bestellung 16563 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
72+0.25 EUR
112+0.16 EUR
180+0.098 EUR
500+0.071 EUR
1000+0.062 EUR
2000+0.055 EUR
Mindestbestellmenge: 72 Stücke
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1N5235BTR 1N5221B-D.PDF
1N5235BTR
Hersteller: onsemi
Description: DIODE ZENER 6.8V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 52375 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
72+0.25 EUR
112+0.16 EUR
180+0.098 EUR
500+0.071 EUR
1000+0.062 EUR
2000+0.055 EUR
Mindestbestellmenge: 72 Stücke
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1N5236BTR 1N5221B-D.PDF
1N5236BTR
Hersteller: onsemi
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
auf Bestellung 66309 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
72+0.25 EUR
112+0.16 EUR
180+0.098 EUR
500+0.071 EUR
1000+0.062 EUR
2000+0.055 EUR
Mindestbestellmenge: 72 Stücke
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1N5240BTR 1n5221b-d.pdf
1N5240BTR
Hersteller: onsemi
Description: DIODE ZENER 10V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
auf Bestellung 6717 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
67+0.26 EUR
110+0.16 EUR
177+0.099 EUR
500+0.072 EUR
1000+0.063 EUR
2000+0.056 EUR
Mindestbestellmenge: 67 Stücke
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1N752ATR 1N746A-759A,4370A-4372A.pdf
1N752ATR
Hersteller: onsemi
Description: DIODE ZENER 5.6V 500MW DO35
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 11 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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1N759ATR 1N746A-759A%2C4370A-4372A.pdf
1N759ATR
Hersteller: onsemi
Description: DIODE ZENER 12V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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74AC273SCX 74AC273%2C%2074ACT273.pdf
74AC273SCX
Hersteller: onsemi
Description: IC FF D-TYPE SINGLE 8BIT 20SOIC
Number of Bits per Element: 8
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Supplier Device Package: 20-SOIC
Input Capacitance: 4.5 pF
Clock Frequency: 175 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Iq): 40 µA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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74ACT245SCX 74ACT245-D.pdf
74ACT245SCX
Hersteller: onsemi
Description: IC TXRX 4.5V/5.5V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
Part Status: Active
auf Bestellung 5164 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
12+1.57 EUR
16+1.13 EUR
25+1.02 EUR
100+0.9 EUR
250+0.84 EUR
500+0.81 EUR
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BC33725TA BC337-FSC-D.PDF
BC33725TA
Hersteller: onsemi
Description: TRANS NPN 45V 0.8A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 569 Stücke:
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AnzahlPreis
36+0.49 EUR
59+0.3 EUR
100+0.19 EUR
500+0.14 EUR
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BC33740TA BC337-FSC-D.PDF
BC33740TA
Hersteller: onsemi
Description: TRANS NPN 45V 0.8A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 638 Stücke:
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AnzahlPreis
39+0.46 EUR
63+0.28 EUR
101+0.17 EUR
500+0.13 EUR
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BS170-D27Z MMBF170-D.PDF
BS170-D27Z
Hersteller: onsemi
Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 830mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 2054 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
24+0.74 EUR
39+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
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FQB34N20LTM fqb34n20l-d.pdf
FQB34N20LTM
Hersteller: onsemi
Description: MOSFET N-CH 200V 31A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+2.74 EUR
1600+2.43 EUR
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ADT7467BBZEVB adt7467-d.pdf
Hersteller: onsemi
Description: BOARD EVALUATION FOR ADT7467
Sensitivity: ±1.5°C
Packaging: Box
Contents: Board(s), Cable(s)
Sensing Range: -40°C ~ 120°C
Embedded: No
Supplied Contents: Board(s), Cable(s)
Utilized IC / Part: ADT7467
Sensor Type: Temperature
Voltage - Supply: 3V ~ 5.5V
Interface: SMBus (2-Wire/I2C)
Produkt ist nicht verfügbar
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NCP1521BSNT1G ncp1521b-d.pdf
NCP1521BSNT1G
Hersteller: onsemi
Description: IC REG BUCK ADJ 600MA 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 5-TSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.9V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
Produkt ist nicht verfügbar
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NCP1521BMUTBG ncp1521b-d.pdf
NCP1521BMUTBG
Hersteller: onsemi
Description: IC REG BUCK ADJ 600MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 6-UDFN (2x2)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.9V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
Produkt ist nicht verfügbar
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NCP1521BSNT1G ncp1521b-d.pdf
NCP1521BSNT1G
Hersteller: onsemi
Description: IC REG BUCK ADJ 600MA 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 5-TSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.9V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
Produkt ist nicht verfügbar
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FDB14N30TM fdb14n30-d.pdf
FDB14N30TM
Hersteller: onsemi
Description: MOSFET N-CH 300V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDFMA2P857 FDFMA2P857_Rev_B2.pdf
FDFMA2P857
Hersteller: onsemi
Description: MOSFET P-CH 20V 3A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDMA1023PZ fdma1023pz-d.pdf
FDMA1023PZ
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 3.7A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.51 EUR
6000+0.48 EUR
Mindestbestellmenge: 3000 Stücke
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FDZ291P FDZ291P.pdf
FDZ291P
Hersteller: onsemi
Description: MOSFET P-CH 20V 4.6A 9BGA
Produkt ist nicht verfügbar
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FMS6502MTC24X FMS6502-D.pdf
FMS6502MTC24X
Hersteller: onsemi
Description: IC VIDEO SWITCH 8IN/6OUT 24TSSOP
Packaging: Tape & Reel (TR)
Features: I2C
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
-3db Bandwidth: 115MHz
Supplier Device Package: 24-TSSOP
Voltage - Supply, Single (V+): 3.135V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 8:6
Part Status: Obsolete
Number of Channels: 1
Produkt ist nicht verfügbar
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FXL4TD245BQX fxl4td245-d.pdf
FXL4TD245BQX
Hersteller: onsemi
Description: IC XLTR VL BIDIR 16-DQFN
Packaging: Tape & Reel (TR)
Features: Power-Off Protection
Package / Case: 16-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-DQFN (2.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 1
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.38 EUR
6000+0.37 EUR
Mindestbestellmenge: 3000 Stücke
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FDB14N30TM fdb14n30-d.pdf
FDB14N30TM
Hersteller: onsemi
Description: MOSFET N-CH 300V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FDMA1023PZ fdma1023pz-d.pdf
FDMA1023PZ
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 3.7A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
auf Bestellung 6031 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.13 EUR
14+1.34 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
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