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FSQ0165RN FSQ0165RN onsemi fsq0365-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 55kHz ~ 67kHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Power (Watts): 15 W
Part Status: Last Time Buy
Control Features: Sync
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
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FSQ0265RN FSQ0265RN onsemi fsq0365-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Last Time Buy
Power (Watts): 20 W
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FXL2TD245L10X FXL2TD245L10X onsemi fxl2td245-d.pdf Description: IC XLTR VL BIDIR 10-MICROPAK
Packaging: Tape & Reel (TR)
Features: Power-Off Protection
Package / Case: 10-UFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
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FAN1540BMPX onsemi FAN1539B,%2040B%20Rev1.0.0.pdf Description: IC REG LINEAR 3.3V 1.3A 6MLP
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FDB8832 FDB8832 onsemi fdb8832-d.pdf Description: MOSFET N-CH 30V 34A/80A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 15 V
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FDD3N40TF FDD3N40TF onsemi FDD_U3N40_RevA.pdf Description: MOSFET N-CH 400V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
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FDD3N40TM FDD3N40TM onsemi FDU3N40-D.pdf Description: MOSFET N-CH 400V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
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FDMC8554 FDMC8554 onsemi ONSM-S-A0003590500-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 20V 16.5A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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FDMC8878 FDMC8878 onsemi FAIR-S-A0002365638-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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FXL2TD245L10X FXL2TD245L10X onsemi fxl2td245-d.pdf Description: IC XLTR VL BIDIR 10-MICROPAK
Features: Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
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1N4732ATR 1N4732ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 4.7V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N4733ATR 1N4733ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 5.1V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N4734ATR 1N4734ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 5.6V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
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1N4737ATR 1N4737ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 7.5V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
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1N4738ATR 1N4738ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 8.2V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
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1N4740ATR 1N4740ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 10V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
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1N4741ATR 1N4741ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 11V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
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1N4742ATR 1N4742ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 12V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
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1N4746ATR 1N4746ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 18V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Produkt ist nicht verfügbar
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1N4747ATR 1N4747ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 20V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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1N4748ATR 1N4748ATR onsemi 1N4736AT-D.PDF Description: DIODE ZENER 22V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
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1N4750ATR 1N4750ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 27V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
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1N5229BTR 1N5229BTR onsemi 1n5221b-d.pdf Description: DIODE ZENER 4.3V 500MW DO35
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
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1N5231BTR 1N5231BTR onsemi 1N5221B-D.PDF Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5233BTR 1N5233BTR onsemi 1n5221b-d.pdf Description: DIODE ZENER 6V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
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1N5235BTR 1N5235BTR onsemi 1N5221B-D.PDF Description: DIODE ZENER 6.8V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
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1N5236BTR 1N5236BTR onsemi 1n5221b-d.pdf Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
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1N5240BTR 1N5240BTR onsemi 1n5221b-d.pdf Description: DIODE ZENER 10V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
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1N752ATR 1N752ATR onsemi 1N746A-759A,4370A-4372A.pdf Description: DIODE ZENER 5.6V 500MW DO35
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 11 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
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1N759ATR 1N759ATR onsemi 1N746A-759A%2C4370A-4372A.pdf Description: DIODE ZENER 12V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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74AC273SCX 74AC273SCX onsemi 74AC273%2C%2074ACT273.pdf Description: IC FF D-TYPE SINGLE 8BIT 20SOIC
Number of Bits per Element: 8
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Supplier Device Package: 20-SOIC
Input Capacitance: 4.5 pF
Clock Frequency: 175 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Iq): 40 µA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
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74ACT245SCX 74ACT245SCX onsemi 74ACT245-D.pdf Description: IC TXRX 4.5V/5.5V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
Part Status: Active
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BC33725TA BC33725TA onsemi BC337-FSC-D.PDF Description: TRANS NPN 45V 0.8A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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BC33740TA BC33740TA onsemi BC337-FSC-D.PDF Description: TRANS NPN 45V 0.8A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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BS170-D27Z BS170-D27Z onsemi MMBF170-D.PDF Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 830mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
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FQB34N20LTM FQB34N20LTM onsemi fqb34n20l-d.pdf Description: MOSFET N-CH 200V 31A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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ADT7467BBZEVB onsemi adt7467-d.pdf Description: BOARD EVALUATION FOR ADT7467
Sensitivity: ±1.5°C
Packaging: Box
Contents: Board(s), Cable(s)
Sensing Range: -40°C ~ 120°C
Embedded: No
Supplied Contents: Board(s), Cable(s)
Utilized IC / Part: ADT7467
Sensor Type: Temperature
Voltage - Supply: 3V ~ 5.5V
Interface: SMBus (2-Wire/I2C)
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NCP1521BSNT1G NCP1521BSNT1G onsemi ncp1521b-d.pdf Description: IC REG BUCK ADJ 600MA 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 5-TSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.9V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
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NCP1521BMUTBG NCP1521BMUTBG onsemi ncp1521b-d.pdf Description: IC REG BUCK ADJ 600MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 6-UDFN (2x2)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.9V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
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NCP1521BSNT1G NCP1521BSNT1G onsemi ncp1521b-d.pdf Description: IC REG BUCK ADJ 600MA 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 5-TSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.9V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
Produkt ist nicht verfügbar
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FDB14N30TM FDB14N30TM onsemi fdb14n30-d.pdf Description: MOSFET N-CH 300V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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FDFMA2P857 FDFMA2P857 onsemi FDFMA2P857_Rev_B2.pdf Description: MOSFET P-CH 20V 3A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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FDMA1023PZ FDMA1023PZ onsemi FDMA1023PZ-D.PDF Description: MOSFET 2P-CH 20V 3.7A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
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FDZ291P FDZ291P onsemi FDZ291P.pdf Description: MOSFET P-CH 20V 4.6A 9BGA
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FMS6502MTC24X FMS6502MTC24X onsemi FMS6502-D.pdf Description: IC VIDEO SWITCH 8IN/6OUT 24TSSOP
Packaging: Tape & Reel (TR)
Features: I2C
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
-3db Bandwidth: 115MHz
Supplier Device Package: 24-TSSOP
Voltage - Supply, Single (V+): 3.135V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 8:6
Part Status: Obsolete
Number of Channels: 1
Produkt ist nicht verfügbar
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FXL4TD245BQX FXL4TD245BQX onsemi fxl4td245-d.pdf Description: IC XLTR VL BIDIR 16-DQFN
Packaging: Tape & Reel (TR)
Features: Power-Off Protection
Package / Case: 16-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-DQFN (2.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 1
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FDB14N30TM FDB14N30TM onsemi fdb14n30-d.pdf Description: MOSFET N-CH 300V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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FDMA1023PZ FDMA1023PZ onsemi FDMA1023PZ-D.PDF Description: MOSFET 2P-CH 20V 3.7A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
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FDZ291P FDZ291P onsemi FDZ291P.pdf Description: MOSFET P-CH 20V 4.6A 9BGA
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FXL4TD245BQX FXL4TD245BQX onsemi fxl4td245-d.pdf Description: IC XLTR VL BIDIR 16-DQFN
Packaging: Cut Tape (CT)
Features: Power-Off Protection
Package / Case: 16-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-DQFN (2.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 1
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74LCX32BQX 74LCX32BQX onsemi ONSM-S-A0006342251-1.pdf?t.download=true&u=5oefqw Description: IC GATE OR 4CH 2-INP 14DQFN
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 14-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-DQFN (3x2.5)
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FSA5157L6X FSA5157L6X onsemi fsa5157-d.pdf Description: IC SW SPDTX1 360MOHM 6MICROPAK
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 21pF
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -75dB @ 100kHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 6-MicroPak
-3db Bandwidth: 80MHz
On-State Resistance (Max): 360mOhm (Typ)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
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BS170-D75Z BS170-D75Z onsemi MMBF170-D.PDF Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 830mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
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FEB110 onsemi Description: FEB110 EVAL BOARD
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1N4735ATR 1N4735ATR onsemi 1n4736at-d.pdf description Description: DIODE ZENER 6.2V 1W DO41
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
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1N4736ATR 1N4736ATR onsemi 1n4736at-d.pdf description Description: DIODE ZENER 6.8V 1W DO41
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
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1N4744ATR 1N4744ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 15V 1W DO41
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
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1N4752ATR 1N4752ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 33V 1W DO41
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
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1N914ATR 1N914ATR onsemi 1N914-D.PDF Description: DIODE STANDARD 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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2N3904TF 2N3904TF onsemi 2N3904-D.pdf Description: TRANS NPN 40V 0.2A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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FSQ0165RN fsq0365-d.pdf
FSQ0165RN
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 55kHz ~ 67kHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Power (Watts): 15 W
Part Status: Last Time Buy
Control Features: Sync
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Produkt ist nicht verfügbar
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FSQ0265RN fsq0365-d.pdf
FSQ0265RN
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Last Time Buy
Power (Watts): 20 W
Produkt ist nicht verfügbar
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FXL2TD245L10X fxl2td245-d.pdf
FXL2TD245L10X
Hersteller: onsemi
Description: IC XLTR VL BIDIR 10-MICROPAK
Packaging: Tape & Reel (TR)
Features: Power-Off Protection
Package / Case: 10-UFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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FAN1540BMPX FAN1539B,%2040B%20Rev1.0.0.pdf
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 1.3A 6MLP
Produkt ist nicht verfügbar
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FDB8832 fdb8832-d.pdf
FDB8832
Hersteller: onsemi
Description: MOSFET N-CH 30V 34A/80A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 15 V
Produkt ist nicht verfügbar
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FDD3N40TF FDD_U3N40_RevA.pdf
FDD3N40TF
Hersteller: onsemi
Description: MOSFET N-CH 400V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Produkt ist nicht verfügbar
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FDD3N40TM FDU3N40-D.pdf
FDD3N40TM
Hersteller: onsemi
Description: MOSFET N-CH 400V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
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FDMC8554 ONSM-S-A0003590500-1.pdf?t.download=true&u=5oefqw
FDMC8554
Hersteller: onsemi
Description: MOSFET N-CH 20V 16.5A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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FDMC8878 FAIR-S-A0002365638-1.pdf?t.download=true&u=5oefqw
FDMC8878
Hersteller: onsemi
Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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6+3.71 EUR
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FXL2TD245L10X fxl2td245-d.pdf
FXL2TD245L10X
Hersteller: onsemi
Description: IC XLTR VL BIDIR 10-MICROPAK
Features: Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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1N4732ATR 1n4736at-d.pdf
1N4732ATR
Hersteller: onsemi
Description: DIODE ZENER 4.7V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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40+0.52 EUR
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1N4733ATR 1n4736at-d.pdf
1N4733ATR
Hersteller: onsemi
Description: DIODE ZENER 5.1V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N4734ATR 1n4736at-d.pdf
1N4734ATR
Hersteller: onsemi
Description: DIODE ZENER 5.6V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
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1N4737ATR 1n4736at-d.pdf
1N4737ATR
Hersteller: onsemi
Description: DIODE ZENER 7.5V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
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1N4738ATR 1n4736at-d.pdf
1N4738ATR
Hersteller: onsemi
Description: DIODE ZENER 8.2V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
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1N4740ATR 1n4736at-d.pdf
1N4740ATR
Hersteller: onsemi
Description: DIODE ZENER 10V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
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1N4741ATR 1n4736at-d.pdf
1N4741ATR
Hersteller: onsemi
Description: DIODE ZENER 11V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
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1N4742ATR 1n4736at-d.pdf
1N4742ATR
Hersteller: onsemi
Description: DIODE ZENER 12V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
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1N4746ATR 1n4736at-d.pdf
1N4746ATR
Hersteller: onsemi
Description: DIODE ZENER 18V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Produkt ist nicht verfügbar
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1N4747ATR 1n4736at-d.pdf
1N4747ATR
Hersteller: onsemi
Description: DIODE ZENER 20V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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42+0.5 EUR
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1N4748ATR 1N4736AT-D.PDF
1N4748ATR
Hersteller: onsemi
Description: DIODE ZENER 22V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
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42+0.5 EUR
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1N4750ATR 1n4736at-d.pdf
1N4750ATR
Hersteller: onsemi
Description: DIODE ZENER 27V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
auf Bestellung 3432 Stücke:
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42+0.5 EUR
69+0.31 EUR
111+0.19 EUR
500+0.14 EUR
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1N5229BTR 1n5221b-d.pdf
1N5229BTR
Hersteller: onsemi
Description: DIODE ZENER 4.3V 500MW DO35
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 12068 Stücke:
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100+0.21 EUR
186+0.11 EUR
387+0.055 EUR
500+0.051 EUR
1000+0.048 EUR
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1N5231BTR 1N5221B-D.PDF
1N5231BTR
Hersteller: onsemi
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
auf Bestellung 112012 Stücke:
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72+0.3 EUR
112+0.19 EUR
180+0.12 EUR
500+0.084 EUR
1000+0.074 EUR
2000+0.065 EUR
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1N5233BTR 1n5221b-d.pdf
1N5233BTR
Hersteller: onsemi
Description: DIODE ZENER 6V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
auf Bestellung 16537 Stücke:
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AnzahlPrivatkunde
67+0.31 EUR
108+0.19 EUR
175+0.12 EUR
500+0.087 EUR
1000+0.076 EUR
2000+0.068 EUR
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1N5235BTR 1N5221B-D.PDF
1N5235BTR
Hersteller: onsemi
Description: DIODE ZENER 6.8V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 52375 Stücke:
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72+0.3 EUR
112+0.19 EUR
180+0.12 EUR
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2000+0.065 EUR
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1N5236BTR 1n5221b-d.pdf
1N5236BTR
Hersteller: onsemi
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
auf Bestellung 31197 Stücke:
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AnzahlPrivatkunde
67+0.31 EUR
108+0.19 EUR
175+0.12 EUR
500+0.087 EUR
1000+0.076 EUR
2000+0.068 EUR
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1N5240BTR 1n5221b-d.pdf
1N5240BTR
Hersteller: onsemi
Description: DIODE ZENER 10V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
auf Bestellung 6717 Stücke:
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AnzahlPrivatkunde
67+0.31 EUR
110+0.19 EUR
177+0.12 EUR
500+0.086 EUR
1000+0.075 EUR
2000+0.067 EUR
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1N752ATR 1N746A-759A,4370A-4372A.pdf
1N752ATR
Hersteller: onsemi
Description: DIODE ZENER 5.6V 500MW DO35
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 11 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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1N759ATR 1N746A-759A%2C4370A-4372A.pdf
1N759ATR
Hersteller: onsemi
Description: DIODE ZENER 12V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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74AC273SCX 74AC273%2C%2074ACT273.pdf
74AC273SCX
Hersteller: onsemi
Description: IC FF D-TYPE SINGLE 8BIT 20SOIC
Number of Bits per Element: 8
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Supplier Device Package: 20-SOIC
Input Capacitance: 4.5 pF
Clock Frequency: 175 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Iq): 40 µA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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74ACT245SCX 74ACT245-D.pdf
74ACT245SCX
Hersteller: onsemi
Description: IC TXRX 4.5V/5.5V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
Part Status: Active
auf Bestellung 2000 Stücke:
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11+1.99 EUR
15+1.44 EUR
25+1.3 EUR
100+1.14 EUR
250+1.07 EUR
500+1.04 EUR
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BC33725TA BC337-FSC-D.PDF
BC33725TA
Hersteller: onsemi
Description: TRANS NPN 45V 0.8A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
58+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
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BC33740TA BC337-FSC-D.PDF
BC33740TA
Hersteller: onsemi
Description: TRANS NPN 45V 0.8A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)
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39+0.55 EUR
62+0.35 EUR
100+0.21 EUR
500+0.15 EUR
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BS170-D27Z MMBF170-D.PDF
BS170-D27Z
Hersteller: onsemi
Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 830mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 4590 Stücke:
Lieferzeit 10-14 Tag (e)
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23+0.94 EUR
36+0.58 EUR
100+0.37 EUR
500+0.27 EUR
1000+0.25 EUR
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FQB34N20LTM fqb34n20l-d.pdf
FQB34N20LTM
Hersteller: onsemi
Description: MOSFET N-CH 200V 31A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ADT7467BBZEVB adt7467-d.pdf
Hersteller: onsemi
Description: BOARD EVALUATION FOR ADT7467
Sensitivity: ±1.5°C
Packaging: Box
Contents: Board(s), Cable(s)
Sensing Range: -40°C ~ 120°C
Embedded: No
Supplied Contents: Board(s), Cable(s)
Utilized IC / Part: ADT7467
Sensor Type: Temperature
Voltage - Supply: 3V ~ 5.5V
Interface: SMBus (2-Wire/I2C)
Produkt ist nicht verfügbar
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NCP1521BSNT1G ncp1521b-d.pdf
NCP1521BSNT1G
Hersteller: onsemi
Description: IC REG BUCK ADJ 600MA 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 5-TSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.9V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
Produkt ist nicht verfügbar
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NCP1521BMUTBG ncp1521b-d.pdf
NCP1521BMUTBG
Hersteller: onsemi
Description: IC REG BUCK ADJ 600MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 6-UDFN (2x2)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.9V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
Produkt ist nicht verfügbar
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NCP1521BSNT1G ncp1521b-d.pdf
NCP1521BSNT1G
Hersteller: onsemi
Description: IC REG BUCK ADJ 600MA 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 5-TSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.9V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
Produkt ist nicht verfügbar
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FDB14N30TM fdb14n30-d.pdf
FDB14N30TM
Hersteller: onsemi
Description: MOSFET N-CH 300V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDFMA2P857 FDFMA2P857_Rev_B2.pdf
FDFMA2P857
Hersteller: onsemi
Description: MOSFET P-CH 20V 3A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDMA1023PZ FDMA1023PZ-D.PDF
FDMA1023PZ
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 3.7A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Produkt ist nicht verfügbar
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FDZ291P FDZ291P.pdf
FDZ291P
Hersteller: onsemi
Description: MOSFET P-CH 20V 4.6A 9BGA
Produkt ist nicht verfügbar
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FMS6502MTC24X FMS6502-D.pdf
FMS6502MTC24X
Hersteller: onsemi
Description: IC VIDEO SWITCH 8IN/6OUT 24TSSOP
Packaging: Tape & Reel (TR)
Features: I2C
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
-3db Bandwidth: 115MHz
Supplier Device Package: 24-TSSOP
Voltage - Supply, Single (V+): 3.135V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 8:6
Part Status: Obsolete
Number of Channels: 1
Produkt ist nicht verfügbar
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FXL4TD245BQX fxl4td245-d.pdf
FXL4TD245BQX
Hersteller: onsemi
Description: IC XLTR VL BIDIR 16-DQFN
Packaging: Tape & Reel (TR)
Features: Power-Off Protection
Package / Case: 16-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-DQFN (2.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 1
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.49 EUR
6000+0.48 EUR
Mindestbestellmenge: 3000 Stücke
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FDB14N30TM fdb14n30-d.pdf
FDB14N30TM
Hersteller: onsemi
Description: MOSFET N-CH 300V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FDMA1023PZ FDMA1023PZ-D.PDF
FDMA1023PZ
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 3.7A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
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FDZ291P FDZ291P.pdf
FDZ291P
Hersteller: onsemi
Description: MOSFET P-CH 20V 4.6A 9BGA
Produkt ist nicht verfügbar
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FXL4TD245BQX fxl4td245-d.pdf
FXL4TD245BQX
Hersteller: onsemi
Description: IC XLTR VL BIDIR 16-DQFN
Packaging: Cut Tape (CT)
Features: Power-Off Protection
Package / Case: 16-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-DQFN (2.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 1
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74LCX32BQX ONSM-S-A0006342251-1.pdf?t.download=true&u=5oefqw
74LCX32BQX
Hersteller: onsemi
Description: IC GATE OR 4CH 2-INP 14DQFN
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 14-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-DQFN (3x2.5)
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FSA5157L6X fsa5157-d.pdf
FSA5157L6X
Hersteller: onsemi
Description: IC SW SPDTX1 360MOHM 6MICROPAK
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 21pF
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -75dB @ 100kHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 6-MicroPak
-3db Bandwidth: 80MHz
On-State Resistance (Max): 360mOhm (Typ)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
auf Bestellung 16545 Stücke:
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BS170-D75Z MMBF170-D.PDF
BS170-D75Z
Hersteller: onsemi
Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 830mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Produkt ist nicht verfügbar
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FEB110
Hersteller: onsemi
Description: FEB110 EVAL BOARD
Produkt ist nicht verfügbar
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1N4735ATR description 1n4736at-d.pdf
1N4735ATR
Hersteller: onsemi
Description: DIODE ZENER 6.2V 1W DO41
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
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1N4736ATR description 1n4736at-d.pdf
1N4736ATR
Hersteller: onsemi
Description: DIODE ZENER 6.8V 1W DO41
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
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1N4744ATR 1n4736at-d.pdf
1N4744ATR
Hersteller: onsemi
Description: DIODE ZENER 15V 1W DO41
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
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1N4752ATR 1n4736at-d.pdf
1N4752ATR
Hersteller: onsemi
Description: DIODE ZENER 33V 1W DO41
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
auf Bestellung 35957 Stücke:
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1N914ATR 1N914-D.PDF
1N914ATR
Hersteller: onsemi
Description: DIODE STANDARD 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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2N3904TF 2N3904-D.pdf
2N3904TF
Hersteller: onsemi
Description: TRANS NPN 40V 0.2A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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