| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFR210BTM_FP001 | onsemi |
 Description: MOSFET N-CH 200V 2.7A DPAKRds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 26W (Tc) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IRFR220BTM_FP001 | onsemi |
Description: MOSFET N-CH 200V 4.6A DPAK Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IRFR224BTM_TC002 | onsemi |
Description: MOSFET N-CH 250V 3.8A DPAK Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 1.1Ohm @ 1.9A, 10V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IRFR420BTM | onsemi |
Description: MOSFET N-CH 500V 2.3A DPAK Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.15A, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IRFS450B | onsemi |
Description: MOSFET N-CH 500V 9.6A TO3PF Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 4.8A, 10V Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IRFS644B_FP001 | onsemi |
Description: MOSFET N-CH 250V 14A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IRFS654B_FP001 | onsemi |
Description: MOSFET N-CH 250V 21A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IRFU214BTU_FP001 | onsemi |
Description: MOSFET N-CH 250V 2.2A IPAK Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IRFU220BTU-AM002 | onsemi |
Description: MOSFET N-CH 200V 4.6A IPAK Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5040 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IRFU220BTU_F080 | onsemi |
Description: MOSFET N-CH 200V 4.6A IPAK Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5040 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IRFU220BTU_FP001 | onsemi |
Description: MOSFET N-CH 200V 4.6A IPAK Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IRL530A | onsemi |
Description: MOSFET N-CH 100V 14A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 7A, 5V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IRLM120ATF | onsemi |
Description: MOSFET N-CH 100V 2.3A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.15A, 5V Power Dissipation (Max): 2.7W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IRLM220ATF | onsemi |
Description: MOSFET N-CH 200V 1.13A SOT223-4 Supplier Device Package: SOT-223-4 Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 570mA, 5V Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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KA3882C | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube Part Status: Obsolete Control Features: Frequency Control Voltage - Start Up: 16 V Fault Protection: Current Limiting Supplier Device Package: 8-DIP Voltage - Supply (Vcc/Vdd): 10V ~ 30V Topology: Flyback Internal Switch(s): No Frequency - Switching: Up to 500kHz Duty Cycle: 96% |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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KA431LZTA_F065 | onsemi |
Description: IC VREF SHUNT ADJ 0.5% TO92-3 Packaging: Tape & Box (TB) Tolerance: ±0.5% Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: TO-92-3 Voltage - Output (Min/Fixed): 2.495V Part Status: Obsolete Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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KA431SAMFTF_G | onsemi |
Description: IC VREF SHUNT ADJ 1% SOT23F-3 Packaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: SOT-23-3 Flat Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: SOT-23F-3 Voltage - Output (Min/Fixed): 2.495V Part Status: Obsolete Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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KA5H0165RN | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Part Status: Obsolete Voltage - Start Up: 15 V Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Supplier Device Package: 8-DIP Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V Topology: Flyback Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 100kHz Duty Cycle: 67% Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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KA5H02659RN | onsemi |
Description: IC OFFLINE SWITCH MULT TOP 8DIP Control Features: Soft Start Voltage - Start Up: 15 V Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Supplier Device Package: 8-DIP Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V Topology: Flyback, Forward Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 100kHz Duty Cycle: 67% Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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KA5L0165RN | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Voltage - Start Up: 15 V Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Supplier Device Package: 8-DIP Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V Topology: Flyback Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 50kHz Duty Cycle: 77% Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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KA5L0365RN | onsemi |
Description: IC OFFLINE SWITCH MULT TOP 8DIP Part Status: Obsolete Voltage - Start Up: 15 V Fault Protection: Current Limiting, Over Temperature, Over Voltage Supplier Device Package: 8-DIP Voltage - Supply (Vcc/Vdd): 9V ~ 30V Topology: Flyback, Forward Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 50kHz Duty Cycle: 77% Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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KA5M02659RN | onsemi |
Description: IC OFFLINE SWITCH MULT TOP 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -25°C ~ 85°C (TA) Duty Cycle: 77% Frequency - Switching: 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Topology: Flyback, Forward Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V Supplier Device Package: 8-DIP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 15 V Control Features: Soft Start Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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KA5Q0765RTYDTU | onsemi |
Description: IC OFFLINE SWITCH TO220F-5L Packaging: Tube Package / Case: TO-220-5 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -25°C ~ 85°C (TA) Duty Cycle: 95% Frequency - Switching: 18kHz ~ 22kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Voltage - Supply (Vcc/Vdd): 9V ~ 40V Supplier Device Package: TO-220F-5L (Forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 15 V Control Features: Sync Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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KSC5021RTU | onsemi |
Description: TRANS NPN 500V 5A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V Frequency - Transition: 18MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 50 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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ML4800CSX_NL | onsemi |
Description: IC PFC CTR AV CURR 76KHZ 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C Voltage - Supply: 11V ~ 16.5V Frequency - Switching: 76kHz Mode: Average Current Supplier Device Package: 16-SOIC Part Status: Obsolete Current - Startup: 200 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| MMBFJ304 | onsemi |
Description: JFET N-CH 30V 15MA SOT23 Configuration: N-Channel Current Rating (Amps): 15mA Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Voltage - Rated: 30 V Part Status: Obsolete Supplier Device Package: TO-236AB Technology: JFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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MPSA10_D74Z | onsemi |
Description: TRANS NPN 40V 0.1A TO-92-3 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: TO-92-3 Frequency - Transition: 125MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5µA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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PN4121_D74Z | onsemi |
Description: TRANS PNP 40V 0.1A TO92-3 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: TO-92-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 1V Current - Collector Cutoff (Max): 25nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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RURD620CCS9A-F085 | onsemi |
Description: DIODE ARR AVAL 200V 6A TO-252AA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-252AA Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Technology: Avalanche Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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SFP9640 | onsemi |
Description: MOSFET P-CH 200V 11A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 123W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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SFP9Z24 | onsemi |
Description: MOSFET P-CH 60V 9.7A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.9A, 10V Power Dissipation (Max): 49W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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SFP9Z34 | onsemi |
Description: MOSFET P-CH 60V 18A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 82W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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SFR9024TM | onsemi |
Description: MOSFET P-CH 60V 7.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.9A, 10V Power Dissipation (Max): 2.5W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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SFR9034TF | onsemi |
Description: MOSFET P-CH 60V 14A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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SFW9640TM | onsemi |
Description: MOSFET P-CH 200V 11A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 123W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| SG6105ADY | onsemi |
Description: IC POWER SUPPLY SUPERVISOR 20DIP Packaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C Voltage - Supply: 4.5V ~ 5.5V Applications: Power Supply, Supervisor Supplier Device Package: 20-DIP Part Status: Obsolete Current - Supply: 5 mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1320 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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SG6516DZ_SB82275 | onsemi |
Description: IC SUPERVISOR 4 CHANNEL 16DIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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SG6961SY | onsemi |
Description: IC PFC CTRLR CRM 50KHZ 8SOP Current - Startup: 10 µA Part Status: Obsolete Supplier Device Package: 8-SOIC Mode: Critical Conduction (CRM) Frequency - Switching: 50kHz Voltage - Supply: 12V ~ 20V Operating Temperature: -20°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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SI4420DY | onsemi |
Description: MOSFET N-CH 30V 12.5A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Part Status: Obsolete Supplier Device Package: 8-SOIC Power Dissipation (Max): 2.5W (Ta) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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SSH70N10A | onsemi |
Description: MOSFET N-CH 100V 70A TO3PN Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PN Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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SSP45N20B_FP001 | onsemi |
Description: MOSFET N-CH 200V 35A TO220-3 Rds On (Max) @ Id, Vgs: 65mOhm @ 17.5A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 176W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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SSR1N60BTM_F080 | onsemi |
Description: MOSFET N-CH 600V 900MA DPAK Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 28W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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SSU1N60BTU-WS | onsemi |
Description: MOSFET N-CH 600V 900MA IPAK Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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TLC530FTU | onsemi |
Description: MOSFET N-CH 330V 7A TO220-3 Drain to Source Voltage (Vdss): 330 V Supplier Device Package: TO-220-3 Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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TLC530TU | onsemi |
Description: MOSFET N-CH 330V 7A TO220-3 Drain to Source Voltage (Vdss): 330 V Supplier Device Package: TO-220-3 Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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UC3843DX | onsemi |
Description: IC REG CTRLR 14SOIC Output Type: Transistor Driver Package / Case: 14-SOIC (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) Number of Outputs: 1 Part Status: Obsolete Clock Sync: No Duty Cycle (Max): 97% Output Phases: 1 Control Features: Frequency Control Synchronous Rectifier: No Supplier Device Package: 14-SOP Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V Topology: Boost, Flyback Frequency - Switching: Up to 500kHz Output Configuration: Positive, Isolation Capable Operating Temperature: 0°C ~ 70°C (TA) Function: Step-Up, Step-Up/Step-Down Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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CAT24C01YI-GT3 | onsemi |
Description: IC EEPROM 1KBIT I2C 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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CAT24C04WI-GT3 | onsemi |
Description: IC EEPROM 4KBIT I2C 400KHZ 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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CAT24C164LI-G | onsemi |
Description: IC EEPROM 16KBIT I2C 400KHZ 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-PDIP Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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CAT24C208WI-GT3 | onsemi |
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOIC Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 8Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Memory Organization: 256 x 8 x 4 Access Time: 900 ns Memory Interface: I²C Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-SOIC Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM DigiKey Programmable: Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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CAT24C256XI-T2 | onsemi |
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 500 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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CAT25128VI-GT3 | onsemi |
Description: IC EEPROM 128KBIT SPI 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 16K x 8 DigiKey Programmable: Verified |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT25256XI | onsemi |
Description: IC EEPROM 256KBIT SPI 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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CAT25256XI-T2 | onsemi |
Description: IC EEPROM 256KBIT SPI 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Verified |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT28C16AG20 | onsemi |
Description: IC EEPROM 16KBIT PARALLEL 32PLCC Packaging: Tube Package / Case: 32-LCC (J-Lead) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 32-PLCC (11.43x13.97) Part Status: Obsolete Write Cycle Time - Word, Page: 10ms Memory Interface: Parallel Access Time: 200 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 128 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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CAT28C16AG-20T | onsemi |
Description: IC EEPROM 16KBIT PARALLEL 32PLCC Packaging: Tape & Reel (TR) Package / Case: 32-LCC (J-Lead) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 32-PLCC (11.43x13.97) Part Status: Obsolete Write Cycle Time - Word, Page: 10ms Memory Interface: Parallel Access Time: 200 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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CAT28C16AGI12 | onsemi |
Description: IC EEPROM 16KBIT PARALLEL 32PLCC Packaging: Tube Package / Case: 32-LCC (J-Lead) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 32-PLCC (11.43x13.97) Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: Parallel Access Time: 120 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 128 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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CAT28C16AL20 | onsemi |
Description: IC EEPROM 16KBIT PARALLEL 24DIP Packaging: Tube Package / Case: 24-DIP (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 24-PDIP Part Status: Obsolete Write Cycle Time - Word, Page: 10ms Memory Interface: Parallel Access Time: 200 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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CAT28C16ALI12 | onsemi |
Description: IC EEPROM 16KBIT PARALLEL 24DIP Packaging: Tube Package / Case: 24-DIP (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 24-PDIP Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: Parallel Access Time: 120 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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CAT28C16ALI20 | onsemi |
Description: IC EEPROM 16KBIT PARALLEL 24DIP Packaging: Tube Package / Case: 24-DIP (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 24-PDIP Part Status: Obsolete Write Cycle Time - Word, Page: 10ms Memory Interface: Parallel Access Time: 200 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFR210BTM_FP001 |
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Hersteller: onsemi
Description: MOSFET N-CH 200V 2.7A DPAK
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Description: MOSFET N-CH 200V 2.7A DPAK
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFR220BTM_FP001 |
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Hersteller: onsemi
Description: MOSFET N-CH 200V 4.6A DPAK
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Description: MOSFET N-CH 200V 4.6A DPAK
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFR224BTM_TC002 |
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Hersteller: onsemi
Description: MOSFET N-CH 250V 3.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 250V 3.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFR420BTM |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 2.3A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.15A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 500V 2.3A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.15A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
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| IRFS450B |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 9.6A TO3PF
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Description: MOSFET N-CH 500V 9.6A TO3PF
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
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| IRFS644B_FP001 |
|
Hersteller: onsemi
Description: MOSFET N-CH 250V 14A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 250V 14A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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| IRFS654B_FP001 |
|
Hersteller: onsemi
Description: MOSFET N-CH 250V 21A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Description: MOSFET N-CH 250V 21A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
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| IRFU214BTU_FP001 |
Hersteller: onsemi
Description: MOSFET N-CH 250V 2.2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 250V 2.2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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| IRFU220BTU-AM002 |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 4.6A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 200V 4.6A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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| IRFU220BTU_F080 |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 4.6A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 200V 4.6A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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| IRFU220BTU_FP001 |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 4.6A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 200V 4.6A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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| IRL530A |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7A, 5V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Description: MOSFET N-CH 100V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7A, 5V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
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| IRLM120ATF |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.3A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.15A, 5V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Description: MOSFET N-CH 100V 2.3A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.15A, 5V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
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| IRLM220ATF |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 1.13A SOT223-4
Supplier Device Package: SOT-223-4
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 570mA, 5V
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Description: MOSFET N-CH 200V 1.13A SOT223-4
Supplier Device Package: SOT-223-4
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 570mA, 5V
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
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| KA3882C |
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Part Status: Obsolete
Control Features: Frequency Control
Voltage - Start Up: 16 V
Fault Protection: Current Limiting
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Topology: Flyback
Internal Switch(s): No
Frequency - Switching: Up to 500kHz
Duty Cycle: 96%
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Part Status: Obsolete
Control Features: Frequency Control
Voltage - Start Up: 16 V
Fault Protection: Current Limiting
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Topology: Flyback
Internal Switch(s): No
Frequency - Switching: Up to 500kHz
Duty Cycle: 96%
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| KA431LZTA_F065 |
|
Hersteller: onsemi
Description: IC VREF SHUNT ADJ 0.5% TO92-3
Packaging: Tape & Box (TB)
Tolerance: ±0.5%
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 0.5% TO92-3
Packaging: Tape & Box (TB)
Tolerance: ±0.5%
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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| KA431SAMFTF_G |
|
Hersteller: onsemi
Description: IC VREF SHUNT ADJ 1% SOT23F-3
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 1% SOT23F-3
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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| KA5H0165RN |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Part Status: Obsolete
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V
Topology: Flyback
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 67%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Part Status: Obsolete
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V
Topology: Flyback
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 67%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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| KA5H02659RN |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH MULT TOP 8DIP
Control Features: Soft Start
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V
Topology: Flyback, Forward
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 67%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Part Status: Obsolete
Description: IC OFFLINE SWITCH MULT TOP 8DIP
Control Features: Soft Start
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V
Topology: Flyback, Forward
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 67%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Part Status: Obsolete
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| KA5L0165RN |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V
Topology: Flyback
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 50kHz
Duty Cycle: 77%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V
Topology: Flyback
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 50kHz
Duty Cycle: 77%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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| KA5L0365RN |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH MULT TOP 8DIP
Part Status: Obsolete
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Topology: Flyback, Forward
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 50kHz
Duty Cycle: 77%
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC OFFLINE SWITCH MULT TOP 8DIP
Part Status: Obsolete
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Topology: Flyback, Forward
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 50kHz
Duty Cycle: 77%
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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| KA5M02659RN |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH MULT TOP 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Obsolete
Description: IC OFFLINE SWITCH MULT TOP 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Obsolete
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| KA5Q0765RTYDTU |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH TO220F-5L
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 95%
Frequency - Switching: 18kHz ~ 22kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Voltage - Supply (Vcc/Vdd): 9V ~ 40V
Supplier Device Package: TO-220F-5L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Sync
Part Status: Obsolete
Description: IC OFFLINE SWITCH TO220F-5L
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 95%
Frequency - Switching: 18kHz ~ 22kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Voltage - Supply (Vcc/Vdd): 9V ~ 40V
Supplier Device Package: TO-220F-5L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Sync
Part Status: Obsolete
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| KSC5021RTU |
|
Hersteller: onsemi
Description: TRANS NPN 500V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Frequency - Transition: 18MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 50 W
Description: TRANS NPN 500V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Frequency - Transition: 18MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 50 W
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| ML4800CSX_NL |
|
Hersteller: onsemi
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Current - Startup: 200 µA
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Current - Startup: 200 µA
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| MMBFJ304 |
|
Hersteller: onsemi
Description: JFET N-CH 30V 15MA SOT23
Configuration: N-Channel
Current Rating (Amps): 15mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-236AB
Technology: JFET
Description: JFET N-CH 30V 15MA SOT23
Configuration: N-Channel
Current Rating (Amps): 15mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-236AB
Technology: JFET
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| MPSA10_D74Z |
Hersteller: onsemi
Description: TRANS NPN 40V 0.1A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5µA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS NPN 40V 0.1A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5µA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| PN4121_D74Z |
|
Hersteller: onsemi
Description: TRANS PNP 40V 0.1A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 1V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS PNP 40V 0.1A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 1V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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| RURD620CCS9A-F085 |
|
Hersteller: onsemi
Description: DIODE ARR AVAL 200V 6A TO-252AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Avalanche
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE ARR AVAL 200V 6A TO-252AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Avalanche
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.66 EUR |
| 5000+ | 0.63 EUR |
| 7500+ | 0.58 EUR |
| SFP9640 |
|
Hersteller: onsemi
Description: MOSFET P-CH 200V 11A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 123W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET P-CH 200V 11A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 123W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| SFP9Z24 |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 9.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.9A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET P-CH 60V 9.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.9A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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| SFP9Z34 |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 18A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 82W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET P-CH 60V 18A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 82W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| SFR9024TM |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 7.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET P-CH 60V 7.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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| SFR9034TF |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 14A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 14A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| SFW9640TM |
|
Hersteller: onsemi
Description: MOSFET P-CH 200V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 123W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 200V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 123W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| SG6105ADY |
Hersteller: onsemi
Description: IC POWER SUPPLY SUPERVISOR 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Power Supply, Supervisor
Supplier Device Package: 20-DIP
Part Status: Obsolete
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
Description: IC POWER SUPPLY SUPERVISOR 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Power Supply, Supervisor
Supplier Device Package: 20-DIP
Part Status: Obsolete
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| SG6516DZ_SB82275 |
|
Hersteller: onsemi
Description: IC SUPERVISOR 4 CHANNEL 16DIP
Description: IC SUPERVISOR 4 CHANNEL 16DIP
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| SG6961SY |
|
Hersteller: onsemi
Description: IC PFC CTRLR CRM 50KHZ 8SOP
Current - Startup: 10 µA
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM)
Frequency - Switching: 50kHz
Voltage - Supply: 12V ~ 20V
Operating Temperature: -20°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC PFC CTRLR CRM 50KHZ 8SOP
Current - Startup: 10 µA
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM)
Frequency - Switching: 50kHz
Voltage - Supply: 12V ~ 20V
Operating Temperature: -20°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| SI4420DY |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 12.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Power Dissipation (Max): 2.5W (Ta)
Description: MOSFET N-CH 30V 12.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Power Dissipation (Max): 2.5W (Ta)
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| SSH70N10A |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 70A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 100V 70A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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| SSP45N20B_FP001 |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 35A TO220-3
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 176W (Tc)
Description: MOSFET N-CH 200V 35A TO220-3
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 176W (Tc)
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| SSR1N60BTM_F080 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 900MA DPAK
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Description: MOSFET N-CH 600V 900MA DPAK
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
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| SSU1N60BTU-WS |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 900MA IPAK
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 600V 900MA IPAK
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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| TLC530FTU |
|
Hersteller: onsemi
Description: MOSFET N-CH 330V 7A TO220-3
Drain to Source Voltage (Vdss): 330 V
Supplier Device Package: TO-220-3
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 330V 7A TO220-3
Drain to Source Voltage (Vdss): 330 V
Supplier Device Package: TO-220-3
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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| TLC530TU |
|
Hersteller: onsemi
Description: MOSFET N-CH 330V 7A TO220-3
Drain to Source Voltage (Vdss): 330 V
Supplier Device Package: TO-220-3
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 330V 7A TO220-3
Drain to Source Voltage (Vdss): 330 V
Supplier Device Package: TO-220-3
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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| UC3843DX |
|
Hersteller: onsemi
Description: IC REG CTRLR 14SOIC
Output Type: Transistor Driver
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 97%
Output Phases: 1
Control Features: Frequency Control
Synchronous Rectifier: No
Supplier Device Package: 14-SOP
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Topology: Boost, Flyback
Frequency - Switching: Up to 500kHz
Output Configuration: Positive, Isolation Capable
Operating Temperature: 0°C ~ 70°C (TA)
Function: Step-Up, Step-Up/Step-Down
Mounting Type: Surface Mount
Description: IC REG CTRLR 14SOIC
Output Type: Transistor Driver
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 97%
Output Phases: 1
Control Features: Frequency Control
Synchronous Rectifier: No
Supplier Device Package: 14-SOP
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Topology: Boost, Flyback
Frequency - Switching: Up to 500kHz
Output Configuration: Positive, Isolation Capable
Operating Temperature: 0°C ~ 70°C (TA)
Function: Step-Up, Step-Up/Step-Down
Mounting Type: Surface Mount
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| CAT24C01YI-GT3 |
|
Hersteller: onsemi
Description: IC EEPROM 1KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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| CAT24C04WI-GT3 |
|
Hersteller: onsemi
Description: IC EEPROM 4KBIT I2C 400KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT I2C 400KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| CAT24C164LI-G |
|
Hersteller: onsemi
Description: IC EEPROM 16KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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| CAT24C208WI-GT3 |
|
Hersteller: onsemi
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOIC
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Memory Organization: 256 x 8 x 4
Access Time: 900 ns
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
DigiKey Programmable: Verified
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOIC
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Memory Organization: 256 x 8 x 4
Access Time: 900 ns
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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| CAT24C256XI-T2 |
|
Hersteller: onsemi
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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| CAT25128VI-GT3 |
|
Hersteller: onsemi
Description: IC EEPROM 128KBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 128KBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Verified
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.66 EUR |
| 6000+ | 0.64 EUR |
| CAT25256XI |
|
Hersteller: onsemi
Description: IC EEPROM 256KBIT SPI 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 256KBIT SPI 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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| CAT25256XI-T2 |
|
Hersteller: onsemi
Description: IC EEPROM 256KBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 256KBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Verified
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| Anzahl | Preis |
|---|---|
| 2000+ | 1 EUR |
| CAT28C16AG20 |
|
Hersteller: onsemi
Description: IC EEPROM 16KBIT PARALLEL 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-PLCC (11.43x13.97)
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT PARALLEL 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-PLCC (11.43x13.97)
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 128 Stücke
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| CAT28C16AG-20T |
|
Hersteller: onsemi
Description: IC EEPROM 16KBIT PARALLEL 32PLCC
Packaging: Tape & Reel (TR)
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-PLCC (11.43x13.97)
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT PARALLEL 32PLCC
Packaging: Tape & Reel (TR)
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-PLCC (11.43x13.97)
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| CAT28C16AGI12 |
|
Hersteller: onsemi
Description: IC EEPROM 16KBIT PARALLEL 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-PLCC (11.43x13.97)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT PARALLEL 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-PLCC (11.43x13.97)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 128 Stücke
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Stück im Wert von UAH
| CAT28C16AL20 |
|
Hersteller: onsemi
Description: IC EEPROM 16KBIT PARALLEL 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 24-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT PARALLEL 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 24-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CAT28C16ALI12 |
|
Hersteller: onsemi
Description: IC EEPROM 16KBIT PARALLEL 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 24-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT PARALLEL 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 24-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT28C16ALI20 |
|
Hersteller: onsemi
Description: IC EEPROM 16KBIT PARALLEL 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 24-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT PARALLEL 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 24-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH