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UC3845BD1R2G UC3845BD1R2G onsemi uc3844b-d.pdf Description: IC REG CTRLR BOOST/FLYBACK 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
auf Bestellung 2598 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.72 EUR
18+ 1.5 EUR
25+ 1.41 EUR
100+ 1.07 EUR
250+ 0.91 EUR
500+ 0.87 EUR
1000+ 0.66 EUR
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UESD3.3DT5G UESD3.3DT5G onsemi uesd3.3dt5g-d.pdf Description: TVS DIODE 3.3VWM SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOT-723
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5V
Power Line Protection: No
auf Bestellung 59922 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
34+ 0.78 EUR
100+ 0.39 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
2000+ 0.24 EUR
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UESD5.0DT5G UESD5.0DT5G onsemi uesd3.3dt5g-d.pdf Description: TVS DIODE 5VWM SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 38pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-723
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.2V
Power Line Protection: No
auf Bestellung 27308 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
34+ 0.78 EUR
100+ 0.39 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
2000+ 0.24 EUR
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UESD6.0DT5G UESD6.0DT5G onsemi uesd3.3dt5g-d.pdf Description: TVS DIODE 6VWM SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 34pF @ 1MHz
Voltage - Reverse Standoff (Typ): 6V (Max)
Supplier Device Package: SOT-723
Unidirectional Channels: 2
Voltage - Breakdown (Min): 7V
Power Line Protection: No
auf Bestellung 8000 Stücke:
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100+ 0.56 EUR
500+ 0.38 EUR
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UMC5NT2G UMC5NT2G onsemi umc2nt1-d.pdf Description: TRANS BRT DUAL 50V SOT-353
Packaging: Cut Tape (CT)
Voltage - Rated: 50V
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
auf Bestellung 120000 Stücke:
Lieferzeit 21-28 Tag (e)
36+0.73 EUR
53+ 0.49 EUR
109+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 36
UMZ1NT1G UMZ1NT1G onsemi umz1nt1-d.pdf Description: TRAN NPN/PNP 50V 0.2A SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 114MHz, 142MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Produkt ist nicht verfügbar
VN2222LLRLRAG VN2222LLRLRAG onsemi VN2222LL%20Rev3.pdf Description: MOSFET N-CH 60V 150MA TO92-3
Produkt ist nicht verfügbar
CYIL1SM0300AA-QWC CYIL1SM0300AA-QWC onsemi CYIL1SM0300AA,%20LUPA-300.pdf Description: IMAGE SENSOR CMOS LUPA-300
Produkt ist nicht verfügbar
CYIL2SC1300AA-GZDC onsemi CYIL2SM1300AA.pdf Description: IMAGE SENSOR CMOS LUPA-1300-2
Produkt ist nicht verfügbar
SBR100-16JS SBR100-16JS onsemi SBR100-16JS.pdf Description: DIODE ARR SCHOT 160V 10A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 160 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 160 V
Produkt ist nicht verfügbar
SBR160-10J SBR160-10J onsemi SBR160-10J.pdf Description: DIODE ARR SCHOT 100V 16A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Produkt ist nicht verfügbar
SBT80-10LS SBT80-10LS onsemi SBT80-10LS.pdf Description: DIODE ARR SCHOTT 100V 8A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220FI(LS)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
SBT150-04J SBT150-04J onsemi SBT150-04J.pdf Description: DIODE ARRAY SCHOTTKY 40V TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Produkt ist nicht verfügbar
SBT80-04J SBT80-04J onsemi SBT80-04J.pdf Description: DIODE ARRAY SCHOTTKY 40V TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Produkt ist nicht verfügbar
SBT150-06J SBT150-06J onsemi SBT150-06J.pdf Description: DIODE ARRAY SCHOTTKY 60V TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
SBT80-06LS SBT80-06LS onsemi SBT80-06LS.pdf Description: DIODE ARRAY SCHOTTKY 60V TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220FI(LS)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 10 V
Produkt ist nicht verfügbar
2SK3707 2SK3707 onsemi 869-1054.jpg Description: MOSFET N-CH 100V 20A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 20 V
Produkt ist nicht verfügbar
2SK3708 2SK3708 onsemi 2SK3708.pdf Description: MOSFET N-CH 100V 30A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V
Produkt ist nicht verfügbar
2SJ656 2SJ656 onsemi 2SJ656.pdf Description: MOSFET P-CH 100V 18A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 75.5mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V
Produkt ist nicht verfügbar
2SC6082 2SC6082 onsemi ena0279-d.pdf Description: TRANS NPN 50V 15A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
Frequency - Transition: 195MHz
Supplier Device Package: TO-220ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
2SK4125 2SK4125 onsemi 869-1070.jpg Description: MOSFET N-CH 600V 17A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
ATP102-TL-H ATP102-TL-H onsemi atp102-d.pdf Description: MOSFET P-CH 30V 40A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
Produkt ist nicht verfügbar
ATP104-TL-H ATP104-TL-H onsemi atp104-d.pdf Description: MOSFET P-CH 30V 75A ATPAK
Produkt ist nicht verfügbar
ATP113-TL-H ATP113-TL-H onsemi Description: MOSFET P-CH 60V 35A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: ATPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
Produkt ist nicht verfügbar
ATP202-TL-H ATP202-TL-H onsemi atp202-d.pdf Description: MOSFET N-CH 30V 50A ATPAK
Produkt ist nicht verfügbar
ATP203-TL-H ATP203-TL-H onsemi mosfets?documentNotFound=3&documentId=62789 Description: MOSFET N-CH 30V 75A ATPAK
Produkt ist nicht verfügbar
ATP204-TL-H ATP204-TL-H onsemi mosfets?documentNotFound=3&documentId=62819 Description: MOSFET N-CH 30V 100A ATPAK
Produkt ist nicht verfügbar
ATP301-TL-H ATP301-TL-H onsemi atp301-d.pdf Description: MOSFET P-CH 100V 28A ATPAK
Produkt ist nicht verfügbar
ATP404-TL-H ATP404-TL-H onsemi ATP404.pdf Description: MOSFET N-CH 60V 95A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Ta)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 48A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 20 V
Produkt ist nicht verfügbar
ATP405-TL-H ATP405-TL-H onsemi 869-1073.jpg Description: MOSFET N-CH 100V 40A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
Produkt ist nicht verfügbar
ATP602-TL-H ATP602-TL-H onsemi mosfets?documentNotFound=3&documentId=62923 Description: MOSFET N-CH 600V 5A ATPAK
Produkt ist nicht verfügbar
2SK3557-7-TB-E 2SK3557-7-TB-E onsemi 2sk3557-d.pdf Description: JFET N-CH 5V 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 50mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Noise Figure: 1dB
Supplier Device Package: 3-CP
Part Status: Active
Voltage - Rated: 15 V
Voltage - Test: 5 V
Current - Test: 1 mA
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 15 V
Current Drain (Id) - Max: 50 mA
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 32 mA @ 5 V
Produkt ist nicht verfügbar
2SK3666-3-TB-E 2SK3666-3-TB-E onsemi ONSMS38239-1.pdf?t.download=true&u=5oefqw Description: JFET N-CH 10MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 200 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Produkt ist nicht verfügbar
CPH3145-TL-E CPH3145-TL-E onsemi cph3145_cph3245-d.pdf Description: TRANS PNP 50V 2A 3CPH
Produkt ist nicht verfügbar
CPH5905G-TL-E CPH5905G-TL-E onsemi cph5905-d.pdf Description: TRANS NPN/MOSFET N-CH CPH5
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V NPN, 15V N-Channel
Package / Case: SOT-23-5 Thin, TSOT-23-5
Current Rating (Amps): 150mA NPN, 50mA N-Channel
Mounting Type: Surface Mount
Transistor Type: NPN, N-Channel
Applications: General Purpose
Supplier Device Package: 5-CPH
Produkt ist nicht verfügbar
CPH6123-TL-E CPH6123-TL-E onsemi en7386-d.pdf Description: TRANS PNP 50V 3A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: 6-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
Produkt ist nicht verfügbar
ECH8654-TL-H ECH8654-TL-H onsemi ena0981-d.pdf Description: MOSFET 2P-CH 20V 5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
Produkt ist nicht verfügbar
ECH8655R-TL-H ECH8655R-TL-H onsemi ech8655r-d.pdf Description: MOSFET 2N-CH 24V 9A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.73 EUR
Mindestbestellmenge: 3000
MCH3475-TL-E MCH3475-TL-E onsemi mch3475-d.pdf Description: MOSFET N-CH 30V 1.8A SC70
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 900mA, 10V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: SC-70FL/MCPH3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
Produkt ist nicht verfügbar
SBE805-TL-E SBE805-TL-E onsemi en7291-d.pdf Description: DIODE ARR SCHOTT 30V 500MA 5CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
Produkt ist nicht verfügbar
SBS811-TL-E SBS811-TL-E onsemi SBS811.pdf Description: DIODE ARRAY SCHOTTKY 30V 2A 8VEC
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-VEC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
Produkt ist nicht verfügbar
SBX201C-TB-E SBX201C-TB-E onsemi ena0628-d.pdf Description: DIODE ARRAY SCHOTTKY 2V 50MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.28pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 2V
Supplier Device Package: 3-CP
Current - Max: 50 mA
Produkt ist nicht verfügbar
SCH2825-TL-E SCH2825-TL-E onsemi SCH2825.pdf Description: MOSFET N-CH 30V 1.6A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 800mA, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
Produkt ist nicht verfügbar
ATP102-TL-H ATP102-TL-H onsemi atp102-d.pdf Description: MOSFET P-CH 30V 40A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
Produkt ist nicht verfügbar
ATP104-TL-H ATP104-TL-H onsemi atp104-d.pdf Description: MOSFET P-CH 30V 75A ATPAK
Produkt ist nicht verfügbar
ATP113-TL-H ATP113-TL-H onsemi Description: MOSFET P-CH 60V 35A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: ATPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
Produkt ist nicht verfügbar
ATP202-TL-H ATP202-TL-H onsemi atp202-d.pdf Description: MOSFET N-CH 30V 50A ATPAK
auf Bestellung 22 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.55 EUR
12+ 2.28 EUR
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ATP203-TL-H ATP203-TL-H onsemi mosfets?documentNotFound=3&documentId=62789 Description: MOSFET N-CH 30V 75A ATPAK
Produkt ist nicht verfügbar
ATP204-TL-H ATP204-TL-H onsemi mosfets?documentNotFound=3&documentId=62819 Description: MOSFET N-CH 30V 100A ATPAK
Produkt ist nicht verfügbar
ATP301-TL-H ATP301-TL-H onsemi atp301-d.pdf Description: MOSFET P-CH 100V 28A ATPAK
Produkt ist nicht verfügbar
ATP404-TL-H ATP404-TL-H onsemi ATP404.pdf Description: MOSFET N-CH 60V 95A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Ta)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 48A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 20 V
Produkt ist nicht verfügbar
ATP405-TL-H ATP405-TL-H onsemi 869-1073.jpg Description: MOSFET N-CH 100V 40A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
auf Bestellung 2784 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.24 EUR
10+ 3.53 EUR
100+ 2.81 EUR
500+ 2.38 EUR
1000+ 2.02 EUR
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ATP602-TL-H ATP602-TL-H onsemi mosfets?documentNotFound=3&documentId=62923 Description: MOSFET N-CH 600V 5A ATPAK
Produkt ist nicht verfügbar
2SK3557-7-TB-E 2SK3557-7-TB-E onsemi 2sk3557-d.pdf Description: JFET N-CH 5V 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 50mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Noise Figure: 1dB
Supplier Device Package: 3-CP
Part Status: Active
Voltage - Rated: 15 V
Voltage - Test: 5 V
Current - Test: 1 mA
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 15 V
Current Drain (Id) - Max: 50 mA
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 32 mA @ 5 V
Produkt ist nicht verfügbar
2SK3666-3-TB-E 2SK3666-3-TB-E onsemi ONSMS38239-1.pdf?t.download=true&u=5oefqw Description: JFET N-CH 10MA SMCP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 200 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Produkt ist nicht verfügbar
CPH3145-TL-E CPH3145-TL-E onsemi cph3145_cph3245-d.pdf Description: TRANS PNP 50V 2A 3CPH
Produkt ist nicht verfügbar
CPH6123-TL-E CPH6123-TL-E onsemi en7386-d.pdf Description: TRANS PNP 50V 3A 6CPH
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: 6-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
Produkt ist nicht verfügbar
ECH8654-TL-H ECH8654-TL-H onsemi ena0981-d.pdf Description: MOSFET 2P-CH 20V 5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
auf Bestellung 196 Stücke:
Lieferzeit 21-28 Tag (e)
14+1.98 EUR
16+ 1.73 EUR
100+ 1.33 EUR
Mindestbestellmenge: 14
ECH8655R-TL-H ECH8655R-TL-H onsemi ech8655r-d.pdf Description: MOSFET 2N-CH 24V 9A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
14+1.9 EUR
16+ 1.66 EUR
100+ 1.28 EUR
500+ 1.01 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 14
SBE805-TL-E SBE805-TL-E onsemi en7291-d.pdf Description: DIODE ARR SCHOTT 30V 500MA 5CPH
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
Produkt ist nicht verfügbar
UC3845BD1R2G uc3844b-d.pdf
UC3845BD1R2G
Hersteller: onsemi
Description: IC REG CTRLR BOOST/FLYBACK 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
auf Bestellung 2598 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.72 EUR
18+ 1.5 EUR
25+ 1.41 EUR
100+ 1.07 EUR
250+ 0.91 EUR
500+ 0.87 EUR
1000+ 0.66 EUR
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UESD3.3DT5G uesd3.3dt5g-d.pdf
UESD3.3DT5G
Hersteller: onsemi
Description: TVS DIODE 3.3VWM SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOT-723
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5V
Power Line Protection: No
auf Bestellung 59922 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
34+ 0.78 EUR
100+ 0.39 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
2000+ 0.24 EUR
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UESD5.0DT5G uesd3.3dt5g-d.pdf
UESD5.0DT5G
Hersteller: onsemi
Description: TVS DIODE 5VWM SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 38pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-723
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.2V
Power Line Protection: No
auf Bestellung 27308 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
34+ 0.78 EUR
100+ 0.39 EUR
500+ 0.35 EUR
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2000+ 0.24 EUR
Mindestbestellmenge: 24
UESD6.0DT5G uesd3.3dt5g-d.pdf
UESD6.0DT5G
Hersteller: onsemi
Description: TVS DIODE 6VWM SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 34pF @ 1MHz
Voltage - Reverse Standoff (Typ): 6V (Max)
Supplier Device Package: SOT-723
Unidirectional Channels: 2
Voltage - Breakdown (Min): 7V
Power Line Protection: No
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.2 EUR
29+ 0.9 EUR
100+ 0.56 EUR
500+ 0.38 EUR
1000+ 0.29 EUR
2000+ 0.26 EUR
Mindestbestellmenge: 22
UMC5NT2G umc2nt1-d.pdf
UMC5NT2G
Hersteller: onsemi
Description: TRANS BRT DUAL 50V SOT-353
Packaging: Cut Tape (CT)
Voltage - Rated: 50V
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
auf Bestellung 120000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
36+0.73 EUR
53+ 0.49 EUR
109+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 36
UMZ1NT1G umz1nt1-d.pdf
UMZ1NT1G
Hersteller: onsemi
Description: TRAN NPN/PNP 50V 0.2A SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 114MHz, 142MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Produkt ist nicht verfügbar
VN2222LLRLRAG VN2222LL%20Rev3.pdf
VN2222LLRLRAG
Hersteller: onsemi
Description: MOSFET N-CH 60V 150MA TO92-3
Produkt ist nicht verfügbar
CYIL1SM0300AA-QWC CYIL1SM0300AA,%20LUPA-300.pdf
CYIL1SM0300AA-QWC
Hersteller: onsemi
Description: IMAGE SENSOR CMOS LUPA-300
Produkt ist nicht verfügbar
CYIL2SC1300AA-GZDC CYIL2SM1300AA.pdf
Hersteller: onsemi
Description: IMAGE SENSOR CMOS LUPA-1300-2
Produkt ist nicht verfügbar
SBR100-16JS SBR100-16JS.pdf
SBR100-16JS
Hersteller: onsemi
Description: DIODE ARR SCHOT 160V 10A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 160 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 160 V
Produkt ist nicht verfügbar
SBR160-10J SBR160-10J.pdf
SBR160-10J
Hersteller: onsemi
Description: DIODE ARR SCHOT 100V 16A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Produkt ist nicht verfügbar
SBT80-10LS SBT80-10LS.pdf
SBT80-10LS
Hersteller: onsemi
Description: DIODE ARR SCHOTT 100V 8A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220FI(LS)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
SBT150-04J SBT150-04J.pdf
SBT150-04J
Hersteller: onsemi
Description: DIODE ARRAY SCHOTTKY 40V TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Produkt ist nicht verfügbar
SBT80-04J SBT80-04J.pdf
SBT80-04J
Hersteller: onsemi
Description: DIODE ARRAY SCHOTTKY 40V TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Produkt ist nicht verfügbar
SBT150-06J SBT150-06J.pdf
SBT150-06J
Hersteller: onsemi
Description: DIODE ARRAY SCHOTTKY 60V TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
SBT80-06LS SBT80-06LS.pdf
SBT80-06LS
Hersteller: onsemi
Description: DIODE ARRAY SCHOTTKY 60V TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220FI(LS)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 10 V
Produkt ist nicht verfügbar
2SK3707 869-1054.jpg
2SK3707
Hersteller: onsemi
Description: MOSFET N-CH 100V 20A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 20 V
Produkt ist nicht verfügbar
2SK3708 2SK3708.pdf
2SK3708
Hersteller: onsemi
Description: MOSFET N-CH 100V 30A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V
Produkt ist nicht verfügbar
2SJ656 2SJ656.pdf
2SJ656
Hersteller: onsemi
Description: MOSFET P-CH 100V 18A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 75.5mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V
Produkt ist nicht verfügbar
2SC6082 ena0279-d.pdf
2SC6082
Hersteller: onsemi
Description: TRANS NPN 50V 15A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
Frequency - Transition: 195MHz
Supplier Device Package: TO-220ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
2SK4125 869-1070.jpg
2SK4125
Hersteller: onsemi
Description: MOSFET N-CH 600V 17A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
ATP102-TL-H atp102-d.pdf
ATP102-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 30V 40A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
Produkt ist nicht verfügbar
ATP104-TL-H atp104-d.pdf
ATP104-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 30V 75A ATPAK
Produkt ist nicht verfügbar
ATP113-TL-H
ATP113-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 60V 35A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: ATPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
Produkt ist nicht verfügbar
ATP202-TL-H atp202-d.pdf
ATP202-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 30V 50A ATPAK
Produkt ist nicht verfügbar
ATP203-TL-H mosfets?documentNotFound=3&documentId=62789
ATP203-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 30V 75A ATPAK
Produkt ist nicht verfügbar
ATP204-TL-H mosfets?documentNotFound=3&documentId=62819
ATP204-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 30V 100A ATPAK
Produkt ist nicht verfügbar
ATP301-TL-H atp301-d.pdf
ATP301-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 100V 28A ATPAK
Produkt ist nicht verfügbar
ATP404-TL-H ATP404.pdf
ATP404-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 60V 95A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Ta)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 48A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 20 V
Produkt ist nicht verfügbar
ATP405-TL-H 869-1073.jpg
ATP405-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 100V 40A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
Produkt ist nicht verfügbar
ATP602-TL-H mosfets?documentNotFound=3&documentId=62923
ATP602-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 600V 5A ATPAK
Produkt ist nicht verfügbar
2SK3557-7-TB-E 2sk3557-d.pdf
2SK3557-7-TB-E
Hersteller: onsemi
Description: JFET N-CH 5V 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 50mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Noise Figure: 1dB
Supplier Device Package: 3-CP
Part Status: Active
Voltage - Rated: 15 V
Voltage - Test: 5 V
Current - Test: 1 mA
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 15 V
Current Drain (Id) - Max: 50 mA
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 32 mA @ 5 V
Produkt ist nicht verfügbar
2SK3666-3-TB-E ONSMS38239-1.pdf?t.download=true&u=5oefqw
2SK3666-3-TB-E
Hersteller: onsemi
Description: JFET N-CH 10MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 200 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Produkt ist nicht verfügbar
CPH3145-TL-E cph3145_cph3245-d.pdf
CPH3145-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 2A 3CPH
Produkt ist nicht verfügbar
CPH5905G-TL-E cph5905-d.pdf
CPH5905G-TL-E
Hersteller: onsemi
Description: TRANS NPN/MOSFET N-CH CPH5
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V NPN, 15V N-Channel
Package / Case: SOT-23-5 Thin, TSOT-23-5
Current Rating (Amps): 150mA NPN, 50mA N-Channel
Mounting Type: Surface Mount
Transistor Type: NPN, N-Channel
Applications: General Purpose
Supplier Device Package: 5-CPH
Produkt ist nicht verfügbar
CPH6123-TL-E en7386-d.pdf
CPH6123-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 3A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: 6-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
Produkt ist nicht verfügbar
ECH8654-TL-H ena0981-d.pdf
ECH8654-TL-H
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
Produkt ist nicht verfügbar
ECH8655R-TL-H ech8655r-d.pdf
ECH8655R-TL-H
Hersteller: onsemi
Description: MOSFET 2N-CH 24V 9A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.73 EUR
Mindestbestellmenge: 3000
MCH3475-TL-E mch3475-d.pdf
MCH3475-TL-E
Hersteller: onsemi
Description: MOSFET N-CH 30V 1.8A SC70
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 900mA, 10V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: SC-70FL/MCPH3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
Produkt ist nicht verfügbar
SBE805-TL-E en7291-d.pdf
SBE805-TL-E
Hersteller: onsemi
Description: DIODE ARR SCHOTT 30V 500MA 5CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
Produkt ist nicht verfügbar
SBS811-TL-E SBS811.pdf
SBS811-TL-E
Hersteller: onsemi
Description: DIODE ARRAY SCHOTTKY 30V 2A 8VEC
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-VEC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
Produkt ist nicht verfügbar
SBX201C-TB-E ena0628-d.pdf
SBX201C-TB-E
Hersteller: onsemi
Description: DIODE ARRAY SCHOTTKY 2V 50MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.28pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 2V
Supplier Device Package: 3-CP
Current - Max: 50 mA
Produkt ist nicht verfügbar
SCH2825-TL-E SCH2825.pdf
SCH2825-TL-E
Hersteller: onsemi
Description: MOSFET N-CH 30V 1.6A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 800mA, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
Produkt ist nicht verfügbar
ATP102-TL-H atp102-d.pdf
ATP102-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 30V 40A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
Produkt ist nicht verfügbar
ATP104-TL-H atp104-d.pdf
ATP104-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 30V 75A ATPAK
Produkt ist nicht verfügbar
ATP113-TL-H
ATP113-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 60V 35A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: ATPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
Produkt ist nicht verfügbar
ATP202-TL-H atp202-d.pdf
ATP202-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 30V 50A ATPAK
auf Bestellung 22 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.55 EUR
12+ 2.28 EUR
Mindestbestellmenge: 11
ATP203-TL-H mosfets?documentNotFound=3&documentId=62789
ATP203-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 30V 75A ATPAK
Produkt ist nicht verfügbar
ATP204-TL-H mosfets?documentNotFound=3&documentId=62819
ATP204-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 30V 100A ATPAK
Produkt ist nicht verfügbar
ATP301-TL-H atp301-d.pdf
ATP301-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 100V 28A ATPAK
Produkt ist nicht verfügbar
ATP404-TL-H ATP404.pdf
ATP404-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 60V 95A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Ta)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 48A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 20 V
Produkt ist nicht verfügbar
ATP405-TL-H 869-1073.jpg
ATP405-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 100V 40A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
auf Bestellung 2784 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.24 EUR
10+ 3.53 EUR
100+ 2.81 EUR
500+ 2.38 EUR
1000+ 2.02 EUR
Mindestbestellmenge: 7
ATP602-TL-H mosfets?documentNotFound=3&documentId=62923
ATP602-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 600V 5A ATPAK
Produkt ist nicht verfügbar
2SK3557-7-TB-E 2sk3557-d.pdf
2SK3557-7-TB-E
Hersteller: onsemi
Description: JFET N-CH 5V 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 50mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Noise Figure: 1dB
Supplier Device Package: 3-CP
Part Status: Active
Voltage - Rated: 15 V
Voltage - Test: 5 V
Current - Test: 1 mA
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 15 V
Current Drain (Id) - Max: 50 mA
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 32 mA @ 5 V
Produkt ist nicht verfügbar
2SK3666-3-TB-E ONSMS38239-1.pdf?t.download=true&u=5oefqw
2SK3666-3-TB-E
Hersteller: onsemi
Description: JFET N-CH 10MA SMCP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 200 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Produkt ist nicht verfügbar
CPH3145-TL-E cph3145_cph3245-d.pdf
CPH3145-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 2A 3CPH
Produkt ist nicht verfügbar
CPH6123-TL-E en7386-d.pdf
CPH6123-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 3A 6CPH
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: 6-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
Produkt ist nicht verfügbar
ECH8654-TL-H ena0981-d.pdf
ECH8654-TL-H
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
auf Bestellung 196 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.98 EUR
16+ 1.73 EUR
100+ 1.33 EUR
Mindestbestellmenge: 14
ECH8655R-TL-H ech8655r-d.pdf
ECH8655R-TL-H
Hersteller: onsemi
Description: MOSFET 2N-CH 24V 9A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.9 EUR
16+ 1.66 EUR
100+ 1.28 EUR
500+ 1.01 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 14
SBE805-TL-E en7291-d.pdf
SBE805-TL-E
Hersteller: onsemi
Description: DIODE ARR SCHOTT 30V 500MA 5CPH
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
Produkt ist nicht verfügbar
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