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VS6V0UA1LBTBR1 VS6V0UA1LBTBR1 Rohm Semiconductor vs6v0ua1lbtbr1-e.pdf Description: 6V 600W, HIGHLY RELIABLE, TRANSI
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.3V
Voltage - Breakdown (Min): 6.67V
Unidirectional Channels: 1
Supplier Device Package: SMBP
Voltage - Reverse Standoff (Typ): 6V
Current - Peak Pulse (10/1000µs): 58.3A
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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VS6V0UA1LBTBR1 VS6V0UA1LBTBR1 Rohm Semiconductor vs6v0ua1lbtbr1-e.pdf Description: 6V 600W, HIGHLY RELIABLE, TRANSI
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.3V
Voltage - Breakdown (Min): 6.67V
Unidirectional Channels: 1
Supplier Device Package: SMBP
Voltage - Reverse Standoff (Typ): 6V
Current - Peak Pulse (10/1000µs): 58.3A
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 1560 Stücke:
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10+2.2 EUR
16+1.39 EUR
100+0.92 EUR
500+0.71 EUR
1000+0.64 EUR
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SFR18EZPJ183 SFR18EZPJ183 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Resistance: 18 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
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5000+0.038 EUR
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SFR18EZPJ183 SFR18EZPJ183 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Resistance: 18 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Cut Tape (CT)
auf Bestellung 9000 Stücke:
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67+0.31 EUR
139+0.15 EUR
178+0.12 EUR
222+0.095 EUR
264+0.08 EUR
313+0.067 EUR
500+0.062 EUR
1000+0.056 EUR
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SCT4036DEC11 SCT4036DEC11 Rohm Semiconductor sct4036de-e.pdf Description: 750V, 42A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
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2SA2071P5T100 2SA2071P5T100 Rohm Semiconductor datasheet?p=2SA2071P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 60V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: MPT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 959 Stücke:
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21+1.02 EUR
100+0.67 EUR
500+0.51 EUR
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ESR01MZPF36R0 ESR01MZPF36R0 Rohm Semiconductor esr-e.pdf Description: RES 36 OHM 1% 1/5W 0402
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Tape & Reel (TR)
Resistance: 36 Ohms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
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ESR01MZPF36R0 ESR01MZPF36R0 Rohm Semiconductor esr-e.pdf Description: RES 36 OHM 1% 1/5W 0402
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Cut Tape (CT)
Resistance: 36 Ohms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
auf Bestellung 9800 Stücke:
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46+0.46 EUR
88+0.24 EUR
110+0.19 EUR
149+0.14 EUR
186+0.11 EUR
250+0.1 EUR
5000+0.084 EUR
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MCR18SEQPF36R0 MCR18SEQPF36R0 Rohm Semiconductor datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 3216(1206)SIZE, HIGH POWER THICK
Resistance: 36 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.4W, 2/5W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MCR18SEQPF36R0 MCR18SEQPF36R0 Rohm Semiconductor datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 3216(1206)SIZE, HIGH POWER THICK
Resistance: 36 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.4W, 2/5W
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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KTR10EZPF5R60 KTR10EZPF5R60 Rohm Semiconductor ktr-e.pdf Description: RES 5.6 OHM 1% 1/8W 0805
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, High Voltage
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
Resistance: 5.6 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
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5000+0.057 EUR
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KTR10EZPF5R60 KTR10EZPF5R60 Rohm Semiconductor ktr-e.pdf Description: RES 5.6 OHM 1% 1/8W 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, High Voltage
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Cut Tape (CT)
Resistance: 5.6 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
auf Bestellung 9720 Stücke:
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63+0.33 EUR
118+0.18 EUR
149+0.14 EUR
176+0.12 EUR
204+0.1 EUR
250+0.086 EUR
500+0.077 EUR
1000+0.069 EUR
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KTR10EZPF2R70 KTR10EZPF2R70 Rohm Semiconductor ktr-e.pdf Description: RES 2.7 OHM 1% 1/8W 0805
Resistance: 2.7 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, High Voltage
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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KTR10EZPF2R70 KTR10EZPF2R70 Rohm Semiconductor ktr-e.pdf Description: RES 2.7 OHM 1% 1/8W 0805
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, High Voltage
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Cut Tape (CT)
Resistance: 2.7 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
auf Bestellung 5000 Stücke:
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63+0.33 EUR
118+0.18 EUR
149+0.14 EUR
176+0.12 EUR
211+0.1 EUR
250+0.086 EUR
500+0.076 EUR
1000+0.069 EUR
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KTR03EZPJ512 KTR03EZPJ512 Rohm Semiconductor ktr-e.pdf Description: RES SMD 5.1K OHM 5% 1/10W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.1 kOhms
auf Bestellung 5000 Stücke:
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5000+0.039 EUR
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KTR03EZPJ512 KTR03EZPJ512 Rohm Semiconductor ktr-e.pdf Description: RES SMD 5.1K OHM 5% 1/10W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.1 kOhms
auf Bestellung 5000 Stücke:
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77+0.27 EUR
154+0.13 EUR
199+0.11 EUR
237+0.088 EUR
278+0.075 EUR
338+0.062 EUR
500+0.055 EUR
1000+0.049 EUR
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LTR100JZPJ562 LTR100JZPJ562 Rohm Semiconductor ltr-e.pdf Description: RES SMD 5.6K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 5.6 kOhms
Produkt ist nicht verfügbar
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LTR100JZPJ562 LTR100JZPJ562 Rohm Semiconductor ltr-e.pdf Description: RES SMD 5.6K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 5.6 kOhms
auf Bestellung 3971 Stücke:
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20+1.07 EUR
34+0.62 EUR
41+0.52 EUR
50+0.46 EUR
100+0.43 EUR
250+0.38 EUR
500+0.36 EUR
1000+0.33 EUR
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SCT4065DLLTRDC SCT4065DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 26A, 9-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
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SCT4065DLLTRDC SCT4065DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 26A, 9-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
auf Bestellung 980 Stücke:
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1+21.97 EUR
10+15.23 EUR
50+12.35 EUR
100+12.05 EUR
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SCT4045DLLTRDC SCT4045DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 37A, 9-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Power Dissipation (Max): 133W
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
Produkt ist nicht verfügbar
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SCT4045DLLTRDC SCT4045DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 37A, 9-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Power Dissipation (Max): 133W
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
auf Bestellung 1929 Stücke:
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1+26.48 EUR
10+18.54 EUR
50+15.36 EUR
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SCT4020DLLTRDC SCT4020DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 80A, 9-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 18V
Power Dissipation (Max): 277W
Vgs(th) (Max) @ Id: 4.8V @ 20mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 500 V
Produkt ist nicht verfügbar
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SCT4020DLLTRDC SCT4020DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 80A, 9-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 18V
Power Dissipation (Max): 277W
Vgs(th) (Max) @ Id: 4.8V @ 20mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 500 V
auf Bestellung 490 Stücke:
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1+45.7 EUR
10+33.06 EUR
50+30.98 EUR
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SCT4013DLLTRDC SCT4013DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 120A, 9-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 405W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
Produkt ist nicht verfügbar
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SCT4013DLLTRDC SCT4013DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 120A, 9-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 405W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
auf Bestellung 670 Stücke:
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1+62.83 EUR
10+46.31 EUR
50+46.27 EUR
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BD7LS07ZG-CTL BD7LS07ZG-CTL Rohm Semiconductor datasheet?p=BD7LS07ZG-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: AUTOMOTIVE SINGLE BUFFER WITH OP
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 5-SSOP
Current - Output High, Low: -, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.36 EUR
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BD7LS07ZG-CTL BD7LS07ZG-CTL Rohm Semiconductor datasheet?p=BD7LS07ZG-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: AUTOMOTIVE SINGLE BUFFER WITH OP
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 5-SSOP
Current - Output High, Low: -, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.83 EUR
37+0.58 EUR
41+0.52 EUR
100+0.45 EUR
250+0.42 EUR
500+0.39 EUR
1000+0.38 EUR
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SDR03EZPF2004 SDR03EZPF2004 Rohm Semiconductor sdr-e.pdf Description: RES SMD 2 MOHM 1% 0.3W 0603
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Tape & Reel (TR)
Resistance: 2 MOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
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SDR03EZPF2004 SDR03EZPF2004 Rohm Semiconductor sdr-e.pdf Description: RES SMD 2 MOHM 1% 0.3W 0603
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Cut Tape (CT)
Resistance: 2 MOhms
Height - Seated (Max): 0.022" (0.55mm)
auf Bestellung 3 Stücke:
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AG543EGS4FRATCB AG543EGS4FRATCB Rohm Semiconductor datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -28A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.1mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG543EGS4FRATCB AG543EGS4FRATCB Rohm Semiconductor datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -28A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.1mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.69 EUR
10+2.36 EUR
50+1.77 EUR
100+1.58 EUR
500+1.26 EUR
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AG542EGS4FRATCB AG542EGS4FRATCB Rohm Semiconductor datasheet?p=AG042FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -67A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG542EGS4FRATCB AG542EGS4FRATCB Rohm Semiconductor datasheet?p=AG042FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -67A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.5 EUR
10+2.88 EUR
50+2.19 EUR
100+1.96 EUR
500+1.56 EUR
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AG047FLS4FRATCB AG047FLS4FRATCB Rohm Semiconductor datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 89A, HPLF5060T5LSAH, POW
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 268µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG047FLS4FRATCB AG047FLS4FRATCB Rohm Semiconductor datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 89A, HPLF5060T5LSAH, POW
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 268µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 1678 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.66 EUR
10+3 EUR
50+2.28 EUR
100+2.05 EUR
500+1.63 EUR
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AG533EES4FRATCB AG533EES4FRATCB Rohm Semiconductor ag533ees4fratcb-e.pdf Description: PCH -30V -35A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG533EES4FRATCB AG533EES4FRATCB Rohm Semiconductor ag533ees4fratcb-e.pdf Description: PCH -30V -35A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2997 Stücke:
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6+3.71 EUR
10+2.37 EUR
50+1.78 EUR
100+1.59 EUR
500+1.26 EUR
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AG048FLS4FRATCB AG048FLS4FRATCB Rohm Semiconductor ag048fls4fratcb-e.pdf Description: NCH 60V 36A, HPLF5060T5LSAH, POW
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG048FLS4FRATCB AG048FLS4FRATCB Rohm Semiconductor ag048fls4fratcb-e.pdf Description: NCH 60V 36A, HPLF5060T5LSAH, POW
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 1989 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.05 EUR
10+2.57 EUR
50+1.94 EUR
100+1.74 EUR
500+1.38 EUR
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AG532EES4FRATCB AG532EES4FRATCB Rohm Semiconductor ag532ees4fratcb-e.pdf Description: PCH -30V -85A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+1.23 EUR
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AG532EES4FRATCB AG532EES4FRATCB Rohm Semiconductor ag532ees4fratcb-e.pdf Description: PCH -30V -85A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.32 EUR
10+2.76 EUR
50+2.09 EUR
100+1.88 EUR
500+1.5 EUR
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AG540EGS4FRATCB AG540EGS4FRATCB Rohm Semiconductor ag540egs4fratcb-e.pdf Description: PCH -40V -120A, HPLF5060T5LSAH,
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG540EGS4FRATCB AG540EGS4FRATCB Rohm Semiconductor ag540egs4fratcb-e.pdf Description: PCH -40V -120A, HPLF5060T5LSAH,
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2921 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.97 EUR
10+4.55 EUR
50+3.51 EUR
100+3.17 EUR
500+2.58 EUR
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ESR18EZPF2491 ESR18EZPF2491 Rohm Semiconductor esr-e.pdf Description: RES 2.49K OHM 1% 1/2W 1206
Resistance: 2.49 kOhms
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Produkt ist nicht verfügbar
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ESR18EZPF2491 ESR18EZPF2491 Rohm Semiconductor esr-e.pdf Description: RES 2.49K OHM 1% 1/2W 1206
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 2.49 kOhms
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LTR18EZPF2491 LTR18EZPF2491 Rohm Semiconductor ltr-e.pdf Description: RES 2.49K OHM 1% 3/4W 1206 WIDE
Resistance: 2.49 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0612
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 1206 (3216 Metric), 0612
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.75W, 3/4W
Packaging: Tape & Reel (TR)
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LTR18EZPF2491 LTR18EZPF2491 Rohm Semiconductor ltr-e.pdf Description: RES 2.49K OHM 1% 3/4W 1206 WIDE
Resistance: 2.49 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0612
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 1206 (3216 Metric), 0612
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.75W, 3/4W
Packaging: Cut Tape (CT)
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BD10IA5MEFJ-ME2 BD10IA5MEFJ-ME2 Rohm Semiconductor datasheet?p=BD10IA5MEFJ-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 1V 500MA 8-HTSOP-J
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.9V @ 500mA
Control Features: Enable, Soft Start
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 700 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
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RBR20BM60AFHTL RBR20BM60AFHTL Rohm Semiconductor datasheet?p=RBR20BM60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOT 60V 20A TO-252
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RBR20BM60AFHTL RBR20BM60AFHTL Rohm Semiconductor datasheet?p=RBR20BM60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOT 60V 20A TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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DTA124XMHZGT2L DTA124XMHZGT2L Rohm Semiconductor VMT3.jpg Description: PNP, SOT-723, R1R2 LEAK ABSORPTI
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: VMT3
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DTA124XMHZGT2L DTA124XMHZGT2L Rohm Semiconductor VMT3.jpg Description: PNP, SOT-723, R1R2 LEAK ABSORPTI
Qualification: AEC-Q101
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: VMT3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
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TFZVTR24B TFZVTR24B Rohm Semiconductor datasheet?p=TFZV24B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 24V 500MW TUMD2M
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Power - Max: 500 mW
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±3%
Packaging: Tape & Reel (TR)
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TFZVTR24B TFZVTR24B Rohm Semiconductor datasheet?p=TFZV24B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 24V 500MW TUMD2M
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Power - Max: 500 mW
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±3%
Packaging: Cut Tape (CT)
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ESR03EZPF5101 ESR03EZPF5101 Rohm Semiconductor esr03-e.pdf Description: RES 5.1K OHM 1% 1/4W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.1 kOhms
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ESR03EZPF5101 ESR03EZPF5101 Rohm Semiconductor esr03-e.pdf Description: RES 5.1K OHM 1% 1/4W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.1 kOhms
auf Bestellung 2938 Stücke:
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SDR03EZPF2404 SDR03EZPF2404 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 MOhms
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SDR03EZPF2404 SDR03EZPF2404 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 MOhms
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SDR10EZPF2404 SDR10EZPF2404 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.4 MOhms
Produkt ist nicht verfügbar
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VS6V0UA1LBTBR1 vs6v0ua1lbtbr1-e.pdf
VS6V0UA1LBTBR1
Hersteller: Rohm Semiconductor
Description: 6V 600W, HIGHLY RELIABLE, TRANSI
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.3V
Voltage - Breakdown (Min): 6.67V
Unidirectional Channels: 1
Supplier Device Package: SMBP
Voltage - Reverse Standoff (Typ): 6V
Current - Peak Pulse (10/1000µs): 58.3A
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS6V0UA1LBTBR1 vs6v0ua1lbtbr1-e.pdf
VS6V0UA1LBTBR1
Hersteller: Rohm Semiconductor
Description: 6V 600W, HIGHLY RELIABLE, TRANSI
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.3V
Voltage - Breakdown (Min): 6.67V
Unidirectional Channels: 1
Supplier Device Package: SMBP
Voltage - Reverse Standoff (Typ): 6V
Current - Peak Pulse (10/1000µs): 58.3A
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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SFR18EZPJ183 sfr-e.pdf
SFR18EZPJ183
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Resistance: 18 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
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SFR18EZPJ183 sfr-e.pdf
SFR18EZPJ183
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Resistance: 18 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Cut Tape (CT)
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67+0.31 EUR
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178+0.12 EUR
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264+0.08 EUR
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500+0.062 EUR
1000+0.056 EUR
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SCT4036DEC11 sct4036de-e.pdf
SCT4036DEC11
Hersteller: Rohm Semiconductor
Description: 750V, 42A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
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2SA2071P5T100 datasheet?p=2SA2071P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SA2071P5T100
Hersteller: Rohm Semiconductor
Description: TRANS PNP 60V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: MPT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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ESR01MZPF36R0 esr-e.pdf
ESR01MZPF36R0
Hersteller: Rohm Semiconductor
Description: RES 36 OHM 1% 1/5W 0402
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Tape & Reel (TR)
Resistance: 36 Ohms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Produkt ist nicht verfügbar
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ESR01MZPF36R0 esr-e.pdf
ESR01MZPF36R0
Hersteller: Rohm Semiconductor
Description: RES 36 OHM 1% 1/5W 0402
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Cut Tape (CT)
Resistance: 36 Ohms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
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46+0.46 EUR
88+0.24 EUR
110+0.19 EUR
149+0.14 EUR
186+0.11 EUR
250+0.1 EUR
5000+0.084 EUR
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MCR18SEQPF36R0 datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR18SEQPF36R0
Hersteller: Rohm Semiconductor
Description: 3216(1206)SIZE, HIGH POWER THICK
Resistance: 36 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.4W, 2/5W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MCR18SEQPF36R0 datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR18SEQPF36R0
Hersteller: Rohm Semiconductor
Description: 3216(1206)SIZE, HIGH POWER THICK
Resistance: 36 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.4W, 2/5W
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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KTR10EZPF5R60 ktr-e.pdf
KTR10EZPF5R60
Hersteller: Rohm Semiconductor
Description: RES 5.6 OHM 1% 1/8W 0805
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, High Voltage
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
Resistance: 5.6 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.057 EUR
Mindestbestellmenge: 5000 Stücke
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KTR10EZPF5R60 ktr-e.pdf
KTR10EZPF5R60
Hersteller: Rohm Semiconductor
Description: RES 5.6 OHM 1% 1/8W 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, High Voltage
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Cut Tape (CT)
Resistance: 5.6 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
auf Bestellung 9720 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
118+0.18 EUR
149+0.14 EUR
176+0.12 EUR
204+0.1 EUR
250+0.086 EUR
500+0.077 EUR
1000+0.069 EUR
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KTR10EZPF2R70 ktr-e.pdf
KTR10EZPF2R70
Hersteller: Rohm Semiconductor
Description: RES 2.7 OHM 1% 1/8W 0805
Resistance: 2.7 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, High Voltage
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.057 EUR
Mindestbestellmenge: 5000 Stücke
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KTR10EZPF2R70 ktr-e.pdf
KTR10EZPF2R70
Hersteller: Rohm Semiconductor
Description: RES 2.7 OHM 1% 1/8W 0805
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, High Voltage
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Cut Tape (CT)
Resistance: 2.7 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
118+0.18 EUR
149+0.14 EUR
176+0.12 EUR
211+0.1 EUR
250+0.086 EUR
500+0.076 EUR
1000+0.069 EUR
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KTR03EZPJ512 ktr-e.pdf
KTR03EZPJ512
Hersteller: Rohm Semiconductor
Description: RES SMD 5.1K OHM 5% 1/10W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.1 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.039 EUR
Mindestbestellmenge: 5000 Stücke
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KTR03EZPJ512 ktr-e.pdf
KTR03EZPJ512
Hersteller: Rohm Semiconductor
Description: RES SMD 5.1K OHM 5% 1/10W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.1 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
77+0.27 EUR
154+0.13 EUR
199+0.11 EUR
237+0.088 EUR
278+0.075 EUR
338+0.062 EUR
500+0.055 EUR
1000+0.049 EUR
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LTR100JZPJ562 ltr-e.pdf
LTR100JZPJ562
Hersteller: Rohm Semiconductor
Description: RES SMD 5.6K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 5.6 kOhms
Produkt ist nicht verfügbar
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LTR100JZPJ562 ltr-e.pdf
LTR100JZPJ562
Hersteller: Rohm Semiconductor
Description: RES SMD 5.6K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 5.6 kOhms
auf Bestellung 3971 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.07 EUR
34+0.62 EUR
41+0.52 EUR
50+0.46 EUR
100+0.43 EUR
250+0.38 EUR
500+0.36 EUR
1000+0.33 EUR
Mindestbestellmenge: 20 Stücke
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SCT4065DLLTRDC TOLL-9LSATAC.jpg
SCT4065DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 26A, 9-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
Produkt ist nicht verfügbar
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SCT4065DLLTRDC TOLL-9LSATAC.jpg
SCT4065DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 26A, 9-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.97 EUR
10+15.23 EUR
50+12.35 EUR
100+12.05 EUR
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SCT4045DLLTRDC TOLL-9LSATAC.jpg
SCT4045DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 37A, 9-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Power Dissipation (Max): 133W
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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SCT4045DLLTRDC TOLL-9LSATAC.jpg
SCT4045DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 37A, 9-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Power Dissipation (Max): 133W
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
auf Bestellung 1929 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+26.48 EUR
10+18.54 EUR
50+15.36 EUR
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SCT4020DLLTRDC TOLL-9LSATAC.jpg
SCT4020DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 80A, 9-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 18V
Power Dissipation (Max): 277W
Vgs(th) (Max) @ Id: 4.8V @ 20mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 500 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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SCT4020DLLTRDC TOLL-9LSATAC.jpg
SCT4020DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 80A, 9-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 18V
Power Dissipation (Max): 277W
Vgs(th) (Max) @ Id: 4.8V @ 20mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 500 V
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+45.7 EUR
10+33.06 EUR
50+30.98 EUR
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SCT4013DLLTRDC TOLL-9LSATAC.jpg
SCT4013DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 120A, 9-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 405W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
Produkt ist nicht verfügbar
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SCT4013DLLTRDC TOLL-9LSATAC.jpg
SCT4013DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 120A, 9-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 405W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
auf Bestellung 670 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+62.83 EUR
10+46.31 EUR
50+46.27 EUR
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BD7LS07ZG-CTL datasheet?p=BD7LS07ZG-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD7LS07ZG-CTL
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE SINGLE BUFFER WITH OP
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 5-SSOP
Current - Output High, Low: -, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.36 EUR
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BD7LS07ZG-CTL datasheet?p=BD7LS07ZG-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD7LS07ZG-CTL
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE SINGLE BUFFER WITH OP
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 5-SSOP
Current - Output High, Low: -, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
37+0.58 EUR
41+0.52 EUR
100+0.45 EUR
250+0.42 EUR
500+0.39 EUR
1000+0.38 EUR
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SDR03EZPF2004 sdr-e.pdf
SDR03EZPF2004
Hersteller: Rohm Semiconductor
Description: RES SMD 2 MOHM 1% 0.3W 0603
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Tape & Reel (TR)
Resistance: 2 MOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Produkt ist nicht verfügbar
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SDR03EZPF2004 sdr-e.pdf
SDR03EZPF2004
Hersteller: Rohm Semiconductor
Description: RES SMD 2 MOHM 1% 0.3W 0603
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Cut Tape (CT)
Resistance: 2 MOhms
Height - Seated (Max): 0.022" (0.55mm)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
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AG543EGS4FRATCB datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG543EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -28A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.1mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG543EGS4FRATCB datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG543EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -28A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.1mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.69 EUR
10+2.36 EUR
50+1.77 EUR
100+1.58 EUR
500+1.26 EUR
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AG542EGS4FRATCB datasheet?p=AG042FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG542EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -67A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG542EGS4FRATCB datasheet?p=AG042FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG542EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -67A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
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AnzahlPrivatkunde
5+4.5 EUR
10+2.88 EUR
50+2.19 EUR
100+1.96 EUR
500+1.56 EUR
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AG047FLS4FRATCB datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG047FLS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 89A, HPLF5060T5LSAH, POW
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 268µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG047FLS4FRATCB datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG047FLS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 89A, HPLF5060T5LSAH, POW
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 268µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 1678 Stücke:
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5+4.66 EUR
10+3 EUR
50+2.28 EUR
100+2.05 EUR
500+1.63 EUR
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AG533EES4FRATCB ag533ees4fratcb-e.pdf
AG533EES4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -30V -35A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG533EES4FRATCB ag533ees4fratcb-e.pdf
AG533EES4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -30V -35A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2997 Stücke:
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AnzahlPrivatkunde
6+3.71 EUR
10+2.37 EUR
50+1.78 EUR
100+1.59 EUR
500+1.26 EUR
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AG048FLS4FRATCB ag048fls4fratcb-e.pdf
AG048FLS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 36A, HPLF5060T5LSAH, POW
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG048FLS4FRATCB ag048fls4fratcb-e.pdf
AG048FLS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 36A, HPLF5060T5LSAH, POW
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 1989 Stücke:
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AnzahlPrivatkunde
6+4.05 EUR
10+2.57 EUR
50+1.94 EUR
100+1.74 EUR
500+1.38 EUR
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AG532EES4FRATCB ag532ees4fratcb-e.pdf
AG532EES4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -30V -85A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.23 EUR
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AG532EES4FRATCB ag532ees4fratcb-e.pdf
AG532EES4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -30V -85A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.32 EUR
10+2.76 EUR
50+2.09 EUR
100+1.88 EUR
500+1.5 EUR
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AG540EGS4FRATCB ag540egs4fratcb-e.pdf
AG540EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -120A, HPLF5060T5LSAH,
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG540EGS4FRATCB ag540egs4fratcb-e.pdf
AG540EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -120A, HPLF5060T5LSAH,
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2921 Stücke:
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4+6.97 EUR
10+4.55 EUR
50+3.51 EUR
100+3.17 EUR
500+2.58 EUR
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ESR18EZPF2491 esr-e.pdf
ESR18EZPF2491
Hersteller: Rohm Semiconductor
Description: RES 2.49K OHM 1% 1/2W 1206
Resistance: 2.49 kOhms
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Produkt ist nicht verfügbar
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ESR18EZPF2491 esr-e.pdf
ESR18EZPF2491
Hersteller: Rohm Semiconductor
Description: RES 2.49K OHM 1% 1/2W 1206
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 2.49 kOhms
auf Bestellung 3840 Stücke:
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67+0.31 EUR
139+0.15 EUR
178+0.12 EUR
211+0.099 EUR
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301+0.07 EUR
500+0.061 EUR
1000+0.056 EUR
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LTR18EZPF2491 ltr-e.pdf
LTR18EZPF2491
Hersteller: Rohm Semiconductor
Description: RES 2.49K OHM 1% 3/4W 1206 WIDE
Resistance: 2.49 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0612
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 1206 (3216 Metric), 0612
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.75W, 3/4W
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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5000+0.06 EUR
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LTR18EZPF2491 ltr-e.pdf
LTR18EZPF2491
Hersteller: Rohm Semiconductor
Description: RES 2.49K OHM 1% 3/4W 1206 WIDE
Resistance: 2.49 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0612
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 1206 (3216 Metric), 0612
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.75W, 3/4W
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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59+0.36 EUR
114+0.18 EUR
144+0.14 EUR
169+0.12 EUR
197+0.11 EUR
250+0.089 EUR
500+0.08 EUR
1000+0.073 EUR
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BD10IA5MEFJ-ME2 datasheet?p=BD10IA5MEFJ-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD10IA5MEFJ-ME2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1V 500MA 8-HTSOP-J
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.9V @ 500mA
Control Features: Enable, Soft Start
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 700 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
13+1.68 EUR
18+1.2 EUR
25+1.08 EUR
100+0.95 EUR
250+0.89 EUR
500+0.86 EUR
1000+0.82 EUR
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RBR20BM60AFHTL datasheet?p=RBR20BM60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20BM60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 60V 20A TO-252
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RBR20BM60AFHTL datasheet?p=RBR20BM60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20BM60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 60V 20A TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
auf Bestellung 1735 Stücke:
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8+2.67 EUR
12+1.9 EUR
100+1.58 EUR
500+1.26 EUR
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DTA124XMHZGT2L VMT3.jpg
DTA124XMHZGT2L
Hersteller: Rohm Semiconductor
Description: PNP, SOT-723, R1R2 LEAK ABSORPTI
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: VMT3
auf Bestellung 8000 Stücke:
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8000+0.079 EUR
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DTA124XMHZGT2L VMT3.jpg
DTA124XMHZGT2L
Hersteller: Rohm Semiconductor
Description: PNP, SOT-723, R1R2 LEAK ABSORPTI
Qualification: AEC-Q101
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: VMT3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 8000 Stücke:
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AnzahlPrivatkunde
100+0.21 EUR
141+0.14 EUR
162+0.13 EUR
193+0.11 EUR
250+0.099 EUR
500+0.093 EUR
1000+0.088 EUR
2500+0.083 EUR
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TFZVTR24B datasheet?p=TFZV24B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TFZVTR24B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 24V 500MW TUMD2M
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Power - Max: 500 mW
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TFZVTR24B datasheet?p=TFZV24B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TFZVTR24B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 24V 500MW TUMD2M
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Power - Max: 500 mW
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±3%
Packaging: Cut Tape (CT)
auf Bestellung 1684 Stücke:
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AnzahlPrivatkunde
50+0.42 EUR
83+0.25 EUR
184+0.11 EUR
500+0.11 EUR
1000+0.11 EUR
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ESR03EZPF5101 esr03-e.pdf
ESR03EZPF5101
Hersteller: Rohm Semiconductor
Description: RES 5.1K OHM 1% 1/4W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.1 kOhms
Produkt ist nicht verfügbar
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ESR03EZPF5101 esr03-e.pdf
ESR03EZPF5101
Hersteller: Rohm Semiconductor
Description: RES 5.1K OHM 1% 1/4W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.1 kOhms
auf Bestellung 2938 Stücke:
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AnzahlPrivatkunde
72+0.3 EUR
145+0.14 EUR
184+0.11 EUR
220+0.095 EUR
258+0.081 EUR
313+0.067 EUR
500+0.058 EUR
1000+0.052 EUR
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SDR03EZPF2404 sdr-e.pdf
SDR03EZPF2404
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 MOhms
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.042 EUR
Mindestbestellmenge: 5000 Stücke
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SDR03EZPF2404 sdr-e.pdf
SDR03EZPF2404
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 MOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
148+0.14 EUR
188+0.11 EUR
223+0.094 EUR
262+0.08 EUR
316+0.067 EUR
500+0.058 EUR
1000+0.052 EUR
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SDR10EZPF2404 sdr-e.pdf
SDR10EZPF2404
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.4 MOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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