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TCP1A155M8R TCP1A155M8R Rohm Semiconductor tc_p-e.pdf Description: CAP TANT 1.5UF 20% 10V 0805
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Features: General Purpose
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Type: Molded
Operating Temperature: -55°C ~ 125°C
ESR (Equivalent Series Resistance): 16.1Ohm
Manufacturer Size Code: P
Height - Seated (Max): 0.047" (1.20mm)
Capacitance: 1.5 µF
Voltage - Rated: 10 V
Produkt ist nicht verfügbar
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LTR18EZPJ270 LTR18EZPJ270 Rohm Semiconductor ltr-e.pdf Description: RES SMD 27 OHM 5% 1.5W 1206 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 27 Ohms
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LTR18EZPJ270 LTR18EZPJ270 Rohm Semiconductor ltr-e.pdf Description: RES SMD 27 OHM 5% 1.5W 1206 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 27 Ohms
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129+0.17 EUR
164+0.13 EUR
194+0.11 EUR
226+0.093 EUR
270+0.077 EUR
500+0.069 EUR
1000+0.062 EUR
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LTR10EZPJ270 LTR10EZPJ270 Rohm Semiconductor LTR%20Low.pdf Description: HIGH POWER CHIP RES 0805 LOW OHM
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 27 Ohms
Produkt ist nicht verfügbar
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MCR03SEQPJ000 MCR03SEQPJ000 Rohm Semiconductor datasheet?p=MCR03SEQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1608(0603)SIZE, HIGH POWER THICK
Packaging: Tape & Reel (TR)
Tolerance: Jumper
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 0 Ohms
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MCR03SEQPJ000 MCR03SEQPJ000 Rohm Semiconductor datasheet?p=MCR03SEQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1608(0603)SIZE, HIGH POWER THICK
Packaging: Cut Tape (CT)
Tolerance: Jumper
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 0 Ohms
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1112+0.019 EUR
1786+0.012 EUR
2223+0.0094 EUR
2578+0.0081 EUR
2809+0.0075 EUR
3022+0.0069 EUR
3301+0.0063 EUR
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DTC144TU3HZGT106 DTC144TU3HZGT106 Rohm Semiconductor datasheet?p=DTC144TU3HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NPN, SOT-323, R1 ALONE
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
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DTC144TU3HZGT106 DTC144TU3HZGT106 Rohm Semiconductor datasheet?p=DTC144TU3HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NPN, SOT-323, R1 ALONE
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
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57+0.37 EUR
100+0.23 EUR
500+0.17 EUR
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DTC144GUAT106 DTC144GUAT106 Rohm Semiconductor datasheet?p=DTC144GUA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
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DTC144GUAT106 DTC144GUAT106 Rohm Semiconductor datasheet?p=DTC144GUA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
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118+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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DTC144TMT2L DTC144TMT2L Rohm Semiconductor datasheet?p=DTC144TM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
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39+0.55 EUR
63+0.33 EUR
101+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
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DTC144GU3T106 DTC144GU3T106 Rohm Semiconductor datasheet?p=DTC144GU3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NPN, SOT-323, R2 ALONE TYPE DIGI
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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DTC144GU3T106 DTC144GU3T106 Rohm Semiconductor datasheet?p=DTC144GU3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NPN, SOT-323, R2 ALONE TYPE DIGI
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
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63+0.33 EUR
101+0.2 EUR
500+0.15 EUR
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DTA115EMHZGT2L DTA115EMHZGT2L Rohm Semiconductor VMT3.jpg Description: PNP, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
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DTA115EMHZGT2L DTA115EMHZGT2L Rohm Semiconductor VMT3.jpg Description: PNP, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
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100+0.21 EUR
143+0.14 EUR
164+0.13 EUR
195+0.11 EUR
250+0.099 EUR
500+0.093 EUR
1000+0.088 EUR
2500+0.083 EUR
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BV1HC045EFJ-CE2 BV1HC045EFJ-CE2 Rohm Semiconductor bv1hc045efj-c-e.pdf Description: AUTOMOTIVE 1CH 45M HIGH-SIDE SWI
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 6V ~ 28V
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BV1HC045EFJ-CE2 BV1HC045EFJ-CE2 Rohm Semiconductor bv1hc045efj-c-e.pdf Description: AUTOMOTIVE 1CH 45M HIGH-SIDE SWI
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 6V ~ 28V
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, UVLO
Grade: Automotive
Qualification: AEC-Q100
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10+5.64 EUR
25+5.19 EUR
100+4.69 EUR
250+4.45 EUR
500+4.31 EUR
1000+4.19 EUR
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DTDG14GPDHZGT100 DTDG14GPDHZGT100 Rohm Semiconductor datasheet?p=DTDG14GPDHZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NPN, TO-243 (SOT-89), R2 ALONE T
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Supplier Device Package: SOT-89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Frequency - Transition: 80 MHz
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DTDG14GPDHZGT100 DTDG14GPDHZGT100 Rohm Semiconductor datasheet?p=DTDG14GPDHZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NPN, TO-243 (SOT-89), R2 ALONE T
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Supplier Device Package: SOT-89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Frequency - Transition: 80 MHz
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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500+0.55 EUR
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R4P030N03HZGT100 R4P030N03HZGT100 Rohm Semiconductor r4p030n03hzgt100-e.pdf Description: NCH 30V 3A, TO-243, POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-89
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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R4P030N03HZGT100 R4P030N03HZGT100 Rohm Semiconductor r4p030n03hzgt100-e.pdf Description: NCH 30V 3A, TO-243, POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-89
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
Qualification: AEC-Q101
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16+1.31 EUR
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100+0.86 EUR
500+0.67 EUR
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2SCR579D3TLQ 2SCR579D3TLQ Rohm Semiconductor datasheet?p=2SCR579D3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NPN, TO-252 (DPAK), 160V 1.5A, P
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 101MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
Produkt ist nicht verfügbar
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2SCR579D3TLQ 2SCR579D3TLQ Rohm Semiconductor datasheet?p=2SCR579D3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NPN, TO-252 (DPAK), 160V 1.5A, P
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 101MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
auf Bestellung 2442 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.52 EUR
20+1.08 EUR
25+0.98 EUR
100+0.86 EUR
250+0.8 EUR
500+0.76 EUR
1000+0.74 EUR
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2SCR579D3FRATLQ 2SCR579D3FRATLQ Rohm Semiconductor datasheet?p=2SCR579D3FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NPN, TO-252 (DPAK), 160V 1.5A, P
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 101MHz
Supplier Device Package: TO-252
Grade: Automotive
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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2SCR579D3FRATLQ 2SCR579D3FRATLQ Rohm Semiconductor datasheet?p=2SCR579D3FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NPN, TO-252 (DPAK), 160V 1.5A, P
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 101MHz
Supplier Device Package: TO-252
Grade: Automotive
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
Qualification: AEC-Q101
auf Bestellung 2384 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.52 EUR
20+1.08 EUR
25+0.98 EUR
100+0.86 EUR
250+0.8 EUR
500+0.76 EUR
1000+0.74 EUR
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2SAR579D3FRATLQ 2SAR579D3FRATLQ Rohm Semiconductor datasheet?p=2SAR579D3FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PNP, TO-252 (DPAK), -160V -1.5A,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 67MHz
Supplier Device Package: TO-252
Grade: Automotive
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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2SAR579D3FRATLQ 2SAR579D3FRATLQ Rohm Semiconductor datasheet?p=2SAR579D3FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PNP, TO-252 (DPAK), -160V -1.5A,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 67MHz
Supplier Device Package: TO-252
Grade: Automotive
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
Qualification: AEC-Q101
auf Bestellung 1987 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.81 EUR
12+1.78 EUR
100+1.19 EUR
500+0.93 EUR
1000+0.84 EUR
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2SAR579D3TLQ 2SAR579D3TLQ Rohm Semiconductor datasheet?p=2SAR579D3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PNP, TO-252 (DPAK), -160V -1.5A,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 67MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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2SAR579D3TLQ 2SAR579D3TLQ Rohm Semiconductor datasheet?p=2SAR579D3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PNP, TO-252 (DPAK), -160V -1.5A,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 67MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
auf Bestellung 2103 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.81 EUR
12+1.78 EUR
100+1.19 EUR
500+0.93 EUR
1000+0.84 EUR
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DTA114ECAT116 DTA114ECAT116 Rohm Semiconductor datasheet?p=DTA114ECA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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DTA114ECAT116 DTA114ECAT116 Rohm Semiconductor datasheet?p=DTA114ECA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 1307 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
36+0.6 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.25 EUR
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DTC124EMHZGT2L DTC124EMHZGT2L Rohm Semiconductor VMT3.jpg Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
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8000+0.079 EUR
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DTC124EMHZGT2L DTC124EMHZGT2L Rohm Semiconductor VMT3.jpg Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.21 EUR
143+0.14 EUR
164+0.13 EUR
195+0.11 EUR
250+0.099 EUR
500+0.093 EUR
1000+0.088 EUR
2500+0.083 EUR
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DTC124XMHZGT2L DTC124XMHZGT2L Rohm Semiconductor VMT3.jpg Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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DTC124XMHZGT2L DTC124XMHZGT2L Rohm Semiconductor VMT3.jpg Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 7965 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.21 EUR
143+0.14 EUR
164+0.13 EUR
195+0.11 EUR
250+0.099 EUR
500+0.093 EUR
1000+0.088 EUR
2500+0.083 EUR
Mindestbestellmenge: 100 Stücke
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DTC124TU3HZGT106 DTC124TU3HZGT106 Rohm Semiconductor datasheet?p=DTC124TU3HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NPN, SOT-323, R1 ALONE TYPE DIGI
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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DTC124TU3HZGT106 DTC124TU3HZGT106 Rohm Semiconductor datasheet?p=DTC124TU3HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NPN, SOT-323, R1 ALONE TYPE DIGI
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
auf Bestellung 2140 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.58 EUR
59+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
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DTA014TEBTL DTA014TEBTL Rohm Semiconductor datasheet?p=DTA014TEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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DTA014TEBTL DTA014TEBTL Rohm Semiconductor datasheet?p=DTA014TEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
auf Bestellung 2838 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.33 EUR
107+0.2 EUR
172+0.12 EUR
500+0.088 EUR
1000+0.077 EUR
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DTA014TUBTL DTA014TUBTL Rohm Semiconductor datasheet?p=DTA014TUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.48 EUR
73+0.29 EUR
118+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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BD79124MUF-CE2 BD79124MUF-CE2 Rohm Semiconductor datasheet?p=BD79124MUF-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC ADC 12BIT VQFN16FV3030
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Number of Bits: 12
Configuration: ADC
Data Interface: I2C
Reference Type: External
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 2.7V ~ 5.25V
Voltage - Supply, Digital: 2.7V ~ 5.25V
Sampling Rate (Per Second): 140k
Input Type: Single Ended
Number of Inputs: 8
Supplier Device Package: VQFN16FV3030
Architecture: SAR
Ratio - S/H:ADC: 1:1
Grade: Automotive
Number of A/D Converters: 1
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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BD79124MUF-CE2 BD79124MUF-CE2 Rohm Semiconductor datasheet?p=BD79124MUF-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC ADC 12BIT VQFN16FV3030
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Number of Bits: 12
Configuration: ADC
Data Interface: I2C
Reference Type: External
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 2.7V ~ 5.25V
Voltage - Supply, Digital: 2.7V ~ 5.25V
Sampling Rate (Per Second): 140k
Input Type: Single Ended
Number of Inputs: 8
Supplier Device Package: VQFN16FV3030
Architecture: SAR
Ratio - S/H:ADC: 1:1
Grade: Automotive
Number of A/D Converters: 1
Qualification: AEC-Q100
auf Bestellung 2863 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.45 EUR
10+7.98 EUR
25+7.37 EUR
100+6.69 EUR
250+6.4 EUR
1000+6.03 EUR
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ESR10EZPF22R0 ESR10EZPF22R0 Rohm Semiconductor esr-e.pdf Description: RES 22 OHM 1% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22 Ohms
auf Bestellung 5000 Stücke:
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5000+0.054 EUR
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ESR10EZPF22R0 ESR10EZPF22R0 Rohm Semiconductor esr-e.pdf Description: RES 22 OHM 1% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22 Ohms
auf Bestellung 9629 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.33 EUR
122+0.17 EUR
155+0.13 EUR
182+0.12 EUR
213+0.099 EUR
255+0.082 EUR
500+0.073 EUR
1000+0.065 EUR
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MCR10SEQPF22R0 MCR10SEQPF22R0 Rohm Semiconductor datasheet?p=MCR10SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 2012(0805)SIZE, HIGH POWER THICK
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22 Ohms
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.014 EUR
15000+0.013 EUR
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MCR10SEQPF22R0 MCR10SEQPF22R0 Rohm Semiconductor datasheet?p=MCR10SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 2012(0805)SIZE, HIGH POWER THICK
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22 Ohms
auf Bestellung 93265 Stücke:
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667+0.031 EUR
807+0.026 EUR
991+0.021 EUR
1112+0.019 EUR
1200+0.018 EUR
1283+0.017 EUR
2500+0.015 EUR
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SDR03EZPJ240 SDR03EZPJ240 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 24 Ohms
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SDR03EZPJ240 SDR03EZPJ240 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 24 Ohms
auf Bestellung 9660 Stücke:
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205+0.1 EUR
264+0.08 EUR
319+0.065 EUR
379+0.055 EUR
467+0.045 EUR
538+0.039 EUR
1000+0.035 EUR
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SDR03EZPF2402 SDR03EZPF2402 Rohm Semiconductor sdr-e.pdf Description: RES SMD 24 KOHM 1% 0.3W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 24 kOhms
Produkt ist nicht verfügbar
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SDR03EZPF2402 SDR03EZPF2402 Rohm Semiconductor sdr-e.pdf Description: RES SMD 24 KOHM 1% 0.3W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 24 kOhms
auf Bestellung 3144 Stücke:
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72+0.3 EUR
148+0.14 EUR
188+0.11 EUR
224+0.094 EUR
262+0.08 EUR
317+0.067 EUR
500+0.058 EUR
1000+0.052 EUR
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SDR03EZPD2402 SDR03EZPD2402 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 24 kOhms
auf Bestellung 10000 Stücke:
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10000+0.056 EUR
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SDR03EZPD2402 SDR03EZPD2402 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 24 kOhms
auf Bestellung 14977 Stücke:
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59+0.36 EUR
114+0.18 EUR
145+0.14 EUR
170+0.12 EUR
197+0.11 EUR
250+0.089 EUR
500+0.08 EUR
1000+0.071 EUR
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RQ5G040ATTCL RQ5G040ATTCL Rohm Semiconductor datasheet?p=RQ5G040AT&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -4.0A, SOT-346T, SMALL
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 20 V
Produkt ist nicht verfügbar
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RQ5G040ATTCL RQ5G040ATTCL Rohm Semiconductor datasheet?p=RQ5G040AT&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -4.0A, SOT-346T, SMALL
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 20 V
auf Bestellung 2372 Stücke:
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14+1.55 EUR
22+0.96 EUR
50+0.7 EUR
100+0.62 EUR
500+0.48 EUR
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RQ5L030ATTCL RQ5L030ATTCL Rohm Semiconductor datasheet?p=RQ5L030AT&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -60V -3.0A, SOT-346T, SMALL
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
Produkt ist nicht verfügbar
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RQ5L030ATTCL RQ5L030ATTCL Rohm Semiconductor datasheet?p=RQ5L030AT&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -60V -3.0A, SOT-346T, SMALL
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
auf Bestellung 2165 Stücke:
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13+1.63 EUR
21+1.01 EUR
50+0.75 EUR
100+0.65 EUR
500+0.5 EUR
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RQ5G060BGTCL RQ5G060BGTCL Rohm Semiconductor datasheet?p=RQ5G060BG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 6A SOT-346T, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20.6mOhm @ 6A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Produkt ist nicht verfügbar
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RQ5G060BGTCL RQ5G060BGTCL Rohm Semiconductor datasheet?p=RQ5G060BG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 6A SOT-346T, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20.6mOhm @ 6A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
auf Bestellung 2755 Stücke:
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12+1.8 EUR
19+1.11 EUR
50+0.82 EUR
100+0.73 EUR
500+0.56 EUR
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AG042FGS4FRATCB AG042FGS4FRATCB Rohm Semiconductor datasheet?p=AG042FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG042FGS4FRATCB AG042FGS4FRATCB Rohm Semiconductor datasheet?p=AG042FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2999 Stücke:
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5+4.69 EUR
10+3.01 EUR
50+2.28 EUR
100+2.05 EUR
500+1.64 EUR
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TCP1A155M8R tc_p-e.pdf
TCP1A155M8R
Hersteller: Rohm Semiconductor
Description: CAP TANT 1.5UF 20% 10V 0805
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Features: General Purpose
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Type: Molded
Operating Temperature: -55°C ~ 125°C
ESR (Equivalent Series Resistance): 16.1Ohm
Manufacturer Size Code: P
Height - Seated (Max): 0.047" (1.20mm)
Capacitance: 1.5 µF
Voltage - Rated: 10 V
Produkt ist nicht verfügbar
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LTR18EZPJ270 ltr-e.pdf
LTR18EZPJ270
Hersteller: Rohm Semiconductor
Description: RES SMD 27 OHM 5% 1.5W 1206 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 27 Ohms
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.05 EUR
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LTR18EZPJ270 ltr-e.pdf
LTR18EZPJ270
Hersteller: Rohm Semiconductor
Description: RES SMD 27 OHM 5% 1.5W 1206 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 27 Ohms
auf Bestellung 9400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
129+0.17 EUR
164+0.13 EUR
194+0.11 EUR
226+0.093 EUR
270+0.077 EUR
500+0.069 EUR
1000+0.062 EUR
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LTR10EZPJ270 LTR%20Low.pdf
LTR10EZPJ270
Hersteller: Rohm Semiconductor
Description: HIGH POWER CHIP RES 0805 LOW OHM
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 27 Ohms
Produkt ist nicht verfügbar
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MCR03SEQPJ000 datasheet?p=MCR03SEQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR03SEQPJ000
Hersteller: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Packaging: Tape & Reel (TR)
Tolerance: Jumper
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 0 Ohms
auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.0061 EUR
10000+0.0057 EUR
15000+0.0056 EUR
25000+0.0054 EUR
50000+0.0052 EUR
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MCR03SEQPJ000 datasheet?p=MCR03SEQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR03SEQPJ000
Hersteller: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Packaging: Cut Tape (CT)
Tolerance: Jumper
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 0 Ohms
auf Bestellung 67005 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
1112+0.019 EUR
1786+0.012 EUR
2223+0.0094 EUR
2578+0.0081 EUR
2809+0.0075 EUR
3022+0.0069 EUR
3301+0.0063 EUR
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DTC144TU3HZGT106 datasheet?p=DTC144TU3HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTC144TU3HZGT106
Hersteller: Rohm Semiconductor
Description: NPN, SOT-323, R1 ALONE
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
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DTC144TU3HZGT106 datasheet?p=DTC144TU3HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTC144TU3HZGT106
Hersteller: Rohm Semiconductor
Description: NPN, SOT-323, R1 ALONE
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
57+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
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DTC144GUAT106 datasheet?p=DTC144GUA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC144GUAT106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
auf Bestellung 3000 Stücke:
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3000+0.096 EUR
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DTC144GUAT106 datasheet?p=DTC144GUA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC144GUAT106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
73+0.29 EUR
118+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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DTC144TMT2L datasheet?p=DTC144TM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC144TMT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
63+0.33 EUR
101+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
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DTC144GU3T106 datasheet?p=DTC144GU3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTC144GU3T106
Hersteller: Rohm Semiconductor
Description: NPN, SOT-323, R2 ALONE TYPE DIGI
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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DTC144GU3T106 datasheet?p=DTC144GU3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTC144GU3T106
Hersteller: Rohm Semiconductor
Description: NPN, SOT-323, R2 ALONE TYPE DIGI
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
63+0.33 EUR
101+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
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DTA115EMHZGT2L VMT3.jpg
DTA115EMHZGT2L
Hersteller: Rohm Semiconductor
Description: PNP, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.079 EUR
Mindestbestellmenge: 8000 Stücke
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DTA115EMHZGT2L VMT3.jpg
DTA115EMHZGT2L
Hersteller: Rohm Semiconductor
Description: PNP, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
100+0.21 EUR
143+0.14 EUR
164+0.13 EUR
195+0.11 EUR
250+0.099 EUR
500+0.093 EUR
1000+0.088 EUR
2500+0.083 EUR
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BV1HC045EFJ-CE2 bv1hc045efj-c-e.pdf
BV1HC045EFJ-CE2
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE 1CH 45M HIGH-SIDE SWI
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 6V ~ 28V
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+3.58 EUR
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BV1HC045EFJ-CE2 bv1hc045efj-c-e.pdf
BV1HC045EFJ-CE2
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE 1CH 45M HIGH-SIDE SWI
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 6V ~ 28V
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.44 EUR
10+5.64 EUR
25+5.19 EUR
100+4.69 EUR
250+4.45 EUR
500+4.31 EUR
1000+4.19 EUR
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DTDG14GPDHZGT100 datasheet?p=DTDG14GPDHZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTDG14GPDHZGT100
Hersteller: Rohm Semiconductor
Description: NPN, TO-243 (SOT-89), R2 ALONE T
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Supplier Device Package: SOT-89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Frequency - Transition: 80 MHz
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DTDG14GPDHZGT100 datasheet?p=DTDG14GPDHZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTDG14GPDHZGT100
Hersteller: Rohm Semiconductor
Description: NPN, TO-243 (SOT-89), R2 ALONE T
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Supplier Device Package: SOT-89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Frequency - Transition: 80 MHz
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.76 EUR
20+1.09 EUR
100+0.71 EUR
500+0.55 EUR
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R4P030N03HZGT100 r4p030n03hzgt100-e.pdf
R4P030N03HZGT100
Hersteller: Rohm Semiconductor
Description: NCH 30V 3A, TO-243, POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-89
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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R4P030N03HZGT100 r4p030n03hzgt100-e.pdf
R4P030N03HZGT100
Hersteller: Rohm Semiconductor
Description: NCH 30V 3A, TO-243, POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-89
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.09 EUR
16+1.31 EUR
50+0.96 EUR
100+0.86 EUR
500+0.67 EUR
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2SCR579D3TLQ datasheet?p=2SCR579D3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SCR579D3TLQ
Hersteller: Rohm Semiconductor
Description: NPN, TO-252 (DPAK), 160V 1.5A, P
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 101MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
Produkt ist nicht verfügbar
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2SCR579D3TLQ datasheet?p=2SCR579D3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SCR579D3TLQ
Hersteller: Rohm Semiconductor
Description: NPN, TO-252 (DPAK), 160V 1.5A, P
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 101MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
auf Bestellung 2442 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.52 EUR
20+1.08 EUR
25+0.98 EUR
100+0.86 EUR
250+0.8 EUR
500+0.76 EUR
1000+0.74 EUR
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2SCR579D3FRATLQ datasheet?p=2SCR579D3FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SCR579D3FRATLQ
Hersteller: Rohm Semiconductor
Description: NPN, TO-252 (DPAK), 160V 1.5A, P
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 101MHz
Supplier Device Package: TO-252
Grade: Automotive
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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2SCR579D3FRATLQ datasheet?p=2SCR579D3FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SCR579D3FRATLQ
Hersteller: Rohm Semiconductor
Description: NPN, TO-252 (DPAK), 160V 1.5A, P
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 101MHz
Supplier Device Package: TO-252
Grade: Automotive
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
Qualification: AEC-Q101
auf Bestellung 2384 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.52 EUR
20+1.08 EUR
25+0.98 EUR
100+0.86 EUR
250+0.8 EUR
500+0.76 EUR
1000+0.74 EUR
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2SAR579D3FRATLQ datasheet?p=2SAR579D3FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SAR579D3FRATLQ
Hersteller: Rohm Semiconductor
Description: PNP, TO-252 (DPAK), -160V -1.5A,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 67MHz
Supplier Device Package: TO-252
Grade: Automotive
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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2SAR579D3FRATLQ datasheet?p=2SAR579D3FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SAR579D3FRATLQ
Hersteller: Rohm Semiconductor
Description: PNP, TO-252 (DPAK), -160V -1.5A,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 67MHz
Supplier Device Package: TO-252
Grade: Automotive
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
Qualification: AEC-Q101
auf Bestellung 1987 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.81 EUR
12+1.78 EUR
100+1.19 EUR
500+0.93 EUR
1000+0.84 EUR
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2SAR579D3TLQ datasheet?p=2SAR579D3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SAR579D3TLQ
Hersteller: Rohm Semiconductor
Description: PNP, TO-252 (DPAK), -160V -1.5A,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 67MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
Produkt ist nicht verfügbar
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2SAR579D3TLQ datasheet?p=2SAR579D3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SAR579D3TLQ
Hersteller: Rohm Semiconductor
Description: PNP, TO-252 (DPAK), -160V -1.5A,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 67MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
auf Bestellung 2103 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.81 EUR
12+1.78 EUR
100+1.19 EUR
500+0.93 EUR
1000+0.84 EUR
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DTA114ECAT116 datasheet?p=DTA114ECA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA114ECAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA114ECAT116 datasheet?p=DTA114ECA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA114ECAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 1307 Stücke:
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22+0.96 EUR
36+0.6 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.25 EUR
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DTC124EMHZGT2L VMT3.jpg
DTC124EMHZGT2L
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
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8000+0.079 EUR
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DTC124EMHZGT2L VMT3.jpg
DTC124EMHZGT2L
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
100+0.21 EUR
143+0.14 EUR
164+0.13 EUR
195+0.11 EUR
250+0.099 EUR
500+0.093 EUR
1000+0.088 EUR
2500+0.083 EUR
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DTC124XMHZGT2L VMT3.jpg
DTC124XMHZGT2L
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DTC124XMHZGT2L VMT3.jpg
DTC124XMHZGT2L
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 7965 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
100+0.21 EUR
143+0.14 EUR
164+0.13 EUR
195+0.11 EUR
250+0.099 EUR
500+0.093 EUR
1000+0.088 EUR
2500+0.083 EUR
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DTC124TU3HZGT106 datasheet?p=DTC124TU3HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTC124TU3HZGT106
Hersteller: Rohm Semiconductor
Description: NPN, SOT-323, R1 ALONE TYPE DIGI
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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DTC124TU3HZGT106 datasheet?p=DTC124TU3HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTC124TU3HZGT106
Hersteller: Rohm Semiconductor
Description: NPN, SOT-323, R1 ALONE TYPE DIGI
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
auf Bestellung 2140 Stücke:
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AnzahlPrivatkunde
36+0.58 EUR
59+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
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DTA014TEBTL datasheet?p=DTA014TEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA014TEBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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DTA014TEBTL datasheet?p=DTA014TEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA014TEBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
auf Bestellung 2838 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
107+0.2 EUR
172+0.12 EUR
500+0.088 EUR
1000+0.077 EUR
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DTA014TUBTL datasheet?p=DTA014TUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA014TUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
73+0.29 EUR
118+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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BD79124MUF-CE2 datasheet?p=BD79124MUF-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD79124MUF-CE2
Hersteller: Rohm Semiconductor
Description: IC ADC 12BIT VQFN16FV3030
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Number of Bits: 12
Configuration: ADC
Data Interface: I2C
Reference Type: External
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 2.7V ~ 5.25V
Voltage - Supply, Digital: 2.7V ~ 5.25V
Sampling Rate (Per Second): 140k
Input Type: Single Ended
Number of Inputs: 8
Supplier Device Package: VQFN16FV3030
Architecture: SAR
Ratio - S/H:ADC: 1:1
Grade: Automotive
Number of A/D Converters: 1
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BD79124MUF-CE2 datasheet?p=BD79124MUF-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD79124MUF-CE2
Hersteller: Rohm Semiconductor
Description: IC ADC 12BIT VQFN16FV3030
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Number of Bits: 12
Configuration: ADC
Data Interface: I2C
Reference Type: External
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 2.7V ~ 5.25V
Voltage - Supply, Digital: 2.7V ~ 5.25V
Sampling Rate (Per Second): 140k
Input Type: Single Ended
Number of Inputs: 8
Supplier Device Package: VQFN16FV3030
Architecture: SAR
Ratio - S/H:ADC: 1:1
Grade: Automotive
Number of A/D Converters: 1
Qualification: AEC-Q100
auf Bestellung 2863 Stücke:
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3+10.45 EUR
10+7.98 EUR
25+7.37 EUR
100+6.69 EUR
250+6.4 EUR
1000+6.03 EUR
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ESR10EZPF22R0 esr-e.pdf
ESR10EZPF22R0
Hersteller: Rohm Semiconductor
Description: RES 22 OHM 1% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22 Ohms
auf Bestellung 5000 Stücke:
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5000+0.054 EUR
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ESR10EZPF22R0 esr-e.pdf
ESR10EZPF22R0
Hersteller: Rohm Semiconductor
Description: RES 22 OHM 1% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22 Ohms
auf Bestellung 9629 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
122+0.17 EUR
155+0.13 EUR
182+0.12 EUR
213+0.099 EUR
255+0.082 EUR
500+0.073 EUR
1000+0.065 EUR
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MCR10SEQPF22R0 datasheet?p=MCR10SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR10SEQPF22R0
Hersteller: Rohm Semiconductor
Description: 2012(0805)SIZE, HIGH POWER THICK
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22 Ohms
auf Bestellung 90000 Stücke:
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5000+0.014 EUR
15000+0.013 EUR
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MCR10SEQPF22R0 datasheet?p=MCR10SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR10SEQPF22R0
Hersteller: Rohm Semiconductor
Description: 2012(0805)SIZE, HIGH POWER THICK
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22 Ohms
auf Bestellung 93265 Stücke:
Lieferzeit 10-14 Tag (e)
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112+0.19 EUR
667+0.031 EUR
807+0.026 EUR
991+0.021 EUR
1112+0.019 EUR
1200+0.018 EUR
1283+0.017 EUR
2500+0.015 EUR
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SDR03EZPJ240 sdr-e.pdf
SDR03EZPJ240
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 24 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.021 EUR
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SDR03EZPJ240 sdr-e.pdf
SDR03EZPJ240
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 24 Ohms
auf Bestellung 9660 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
100+0.21 EUR
205+0.1 EUR
264+0.08 EUR
319+0.065 EUR
379+0.055 EUR
467+0.045 EUR
538+0.039 EUR
1000+0.035 EUR
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SDR03EZPF2402 sdr-e.pdf
SDR03EZPF2402
Hersteller: Rohm Semiconductor
Description: RES SMD 24 KOHM 1% 0.3W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 24 kOhms
Produkt ist nicht verfügbar
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SDR03EZPF2402 sdr-e.pdf
SDR03EZPF2402
Hersteller: Rohm Semiconductor
Description: RES SMD 24 KOHM 1% 0.3W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 24 kOhms
auf Bestellung 3144 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
148+0.14 EUR
188+0.11 EUR
224+0.094 EUR
262+0.08 EUR
317+0.067 EUR
500+0.058 EUR
1000+0.052 EUR
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SDR03EZPD2402 sdr-e.pdf
SDR03EZPD2402
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 24 kOhms
auf Bestellung 10000 Stücke:
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5000+0.06 EUR
10000+0.056 EUR
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SDR03EZPD2402 sdr-e.pdf
SDR03EZPD2402
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 24 kOhms
auf Bestellung 14977 Stücke:
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59+0.36 EUR
114+0.18 EUR
145+0.14 EUR
170+0.12 EUR
197+0.11 EUR
250+0.089 EUR
500+0.08 EUR
1000+0.071 EUR
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RQ5G040ATTCL datasheet?p=RQ5G040AT&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RQ5G040ATTCL
Hersteller: Rohm Semiconductor
Description: PCH -40V -4.0A, SOT-346T, SMALL
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 20 V
Produkt ist nicht verfügbar
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RQ5G040ATTCL datasheet?p=RQ5G040AT&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RQ5G040ATTCL
Hersteller: Rohm Semiconductor
Description: PCH -40V -4.0A, SOT-346T, SMALL
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 20 V
auf Bestellung 2372 Stücke:
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AnzahlPrivatkunde
14+1.55 EUR
22+0.96 EUR
50+0.7 EUR
100+0.62 EUR
500+0.48 EUR
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RQ5L030ATTCL datasheet?p=RQ5L030AT&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RQ5L030ATTCL
Hersteller: Rohm Semiconductor
Description: PCH -60V -3.0A, SOT-346T, SMALL
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
Produkt ist nicht verfügbar
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RQ5L030ATTCL datasheet?p=RQ5L030AT&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RQ5L030ATTCL
Hersteller: Rohm Semiconductor
Description: PCH -60V -3.0A, SOT-346T, SMALL
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
auf Bestellung 2165 Stücke:
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AnzahlPrivatkunde
13+1.63 EUR
21+1.01 EUR
50+0.75 EUR
100+0.65 EUR
500+0.5 EUR
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RQ5G060BGTCL datasheet?p=RQ5G060BG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RQ5G060BGTCL
Hersteller: Rohm Semiconductor
Description: NCH 40V 6A SOT-346T, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20.6mOhm @ 6A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Produkt ist nicht verfügbar
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RQ5G060BGTCL datasheet?p=RQ5G060BG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RQ5G060BGTCL
Hersteller: Rohm Semiconductor
Description: NCH 40V 6A SOT-346T, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20.6mOhm @ 6A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
auf Bestellung 2755 Stücke:
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12+1.8 EUR
19+1.11 EUR
50+0.82 EUR
100+0.73 EUR
500+0.56 EUR
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AG042FGS4FRATCB datasheet?p=AG042FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG042FGS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG042FGS4FRATCB datasheet?p=AG042FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG042FGS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2999 Stücke:
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AnzahlPrivatkunde
5+4.69 EUR
10+3.01 EUR
50+2.28 EUR
100+2.05 EUR
500+1.64 EUR
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