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RB178VYM-40FHTR RB178VYM-40FHTR Rohm Semiconductor datasheet?p=RB178VYM-40FH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 40V, 1A, SOD-323HE, SCHOTTKY BAR
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 40 V
Qualification: AEC-Q101
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100+0.43 EUR
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RH7L03BBKFRATCB RH7L03BBKFRATCB Rohm Semiconductor datasheet?p=RH7L03BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 35A, DFN3333T8LSAB, POWE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN3333T8LSAB
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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RH7L03BBKFRATCB RH7L03BBKFRATCB Rohm Semiconductor datasheet?p=RH7L03BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 35A, DFN3333T8LSAB, POWE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN3333T8LSAB
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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LTR100JZPFLR300 LTR100JZPFLR300 Rohm Semiconductor ltr-low-e.pdf Description: RES SMD 0.3 OHM 1% 3W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 300 mOhms
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LTR100JZPFLR300 LTR100JZPFLR300 Rohm Semiconductor ltr-low-e.pdf Description: RES SMD 0.3 OHM 1% 3W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 300 mOhms
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ESR03EZPF9102 ESR03EZPF9102 Rohm Semiconductor esr-e.pdf Description: RES 91K OHM 1% 1/4W 0603
Resistance: 91 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
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ESR03EZPF9102 ESR03EZPF9102 Rohm Semiconductor esr-e.pdf Description: RES 91K OHM 1% 1/4W 0603
Resistance: 91 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Packaging: Cut Tape (CT)
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RB228NS-30TL RB228NS-30TL Rohm Semiconductor datasheet?p=RB228NS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
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RB228NS-30TL RB228NS-30TL Rohm Semiconductor datasheet?p=RB228NS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
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RB228NS-30FHTL RB228NS-30FHTL Rohm Semiconductor datasheet?p=RB228NS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Qualification: AEC-Q101
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RB228NS-30FHTL RB228NS-30FHTL Rohm Semiconductor datasheet?p=RB228NS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Qualification: AEC-Q101
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RB228NS-60FHTL RB228NS-60FHTL Rohm Semiconductor datasheet?p=RB228NS-60FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RB228NS-60FHTL RB228NS-60FHTL Rohm Semiconductor datasheet?p=RB228NS-60FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
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RB228NS-40TL RB228NS-40TL Rohm Semiconductor datasheet?p=RB228NS-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 40V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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RB228NS-40TL RB228NS-40TL Rohm Semiconductor datasheet?p=RB228NS-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 40V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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RQ3L270BJFRATCB RQ3L270BJFRATCB Rohm Semiconductor rq3l270bjfratcb-e.pdf Description: PCH -60V -27A, HSMT8AG, POWER MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 27A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 584µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V
Qualification: AEC-Q101
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RQ3L270BJFRATCB RQ3L270BJFRATCB Rohm Semiconductor rq3l270bjfratcb-e.pdf Description: PCH -60V -27A, HSMT8AG, POWER MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 27A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 584µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V
Qualification: AEC-Q101
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SDR03EZPF1202 SDR03EZPF1202 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Tape & Reel (TR)
Resistance: 12 kOhms
Height - Seated (Max): 0.022" (0.55mm)
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SDR03EZPF1202 SDR03EZPF1202 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 12 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Cut Tape (CT)
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SDR03EZPF12R0 SDR03EZPF12R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Tape & Reel (TR)
Resistance: 12 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
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SDR03EZPF12R0 SDR03EZPF12R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 12 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Cut Tape (CT)
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SH8MC4TB1 SH8MC4TB1 Rohm Semiconductor sh8mc4tb1-e.pdf Description: MOSFET N/P-CH 60V 3.5A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SH8MC4TB1 SH8MC4TB1 Rohm Semiconductor sh8mc4tb1-e.pdf Description: MOSFET N/P-CH 60V 3.5A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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12+1.8 EUR
100+1.2 EUR
500+0.94 EUR
1000+0.86 EUR
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BD67872MWV-ZE2 BD67872MWV-ZE2 Rohm Semiconductor datasheet?p=BD67872MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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BD67872MWV-ZE2 BD67872MWV-ZE2 Rohm Semiconductor datasheet?p=BD67872MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2486 Stücke:
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5+5.02 EUR
10+3.75 EUR
25+3.44 EUR
100+3.08 EUR
250+2.92 EUR
500+2.84 EUR
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BD67870MWV-ZE2 BD67870MWV-ZE2 Rohm Semiconductor datasheet?p=BD67870MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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BD67870MWV-ZE2 BD67870MWV-ZE2 Rohm Semiconductor datasheet?p=BD67870MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
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5+5.13 EUR
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100+3.14 EUR
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BD67871MWV-ZE2 BD67871MWV-ZE2 Rohm Semiconductor datasheet?p=BD67871MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRIC3 4.5 V TO 60 V, THREE-PHASE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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BD67871MWV-ZE2 BD67871MWV-ZE2 Rohm Semiconductor datasheet?p=BD67871MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRIC3 4.5 V TO 60 V, THREE-PHASE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2487 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.66 EUR
10+5.8 EUR
25+5.32 EUR
100+4.81 EUR
250+4.57 EUR
500+4.55 EUR
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BD67871MWV-EVK-003 BD67871MWV-EVK-003 Rohm Semiconductor bd67871mwv-z-e.pdf Description: EVALUATION BOARD - BD67871MWV-EV
Packaging: Bulk
auf Bestellung 3 Stücke:
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BD67872MWV-EVK-003 BD67872MWV-EVK-003 Rohm Semiconductor bd67872mwv-z-e.pdf Description: EVALUATION BOARD - BD67872MWV-EV
Packaging: Bulk
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BD67870MWV-EVK-003 BD67870MWV-EVK-003 Rohm Semiconductor bd67870mwv-z-e.pdf Description: EVALUATION BOARD - BD67870MWV-EV
Packaging: Bulk
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R8011KNZ4C13 R8011KNZ4C13 Rohm Semiconductor r8011knz4c13-e.pdf Description: NCH 800V 11A, TO-247AD, HIGH-SPE
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
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R8011KNZ4C13 R8011KNZ4C13 Rohm Semiconductor r8011knz4c13-e.pdf Description: NCH 800V 11A, TO-247AD, HIGH-SPE
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
auf Bestellung 600 Stücke:
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RH6E040BGTB1 RH6E040BGTB1 Rohm Semiconductor rh6e040bgtb1-e.pdf Description: NCH 30V 125A, HSMT8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 40A, 10V
Power Dissipation (Max): 2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 3000 Stücke:
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RH6E040BGTB1 RH6E040BGTB1 Rohm Semiconductor rh6e040bgtb1-e.pdf Description: NCH 30V 125A, HSMT8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 40A, 10V
Power Dissipation (Max): 2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 3000 Stücke:
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500+1.4 EUR
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MCR03SEQPF5100 MCR03SEQPF5100 Rohm Semiconductor datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1608(0603)SIZE, HIGH POWER THICK
Resistance: 510 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
auf Bestellung 95000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.0088 EUR
10000+0.0084 EUR
15000+0.0082 EUR
25000+0.008 EUR
35000+0.0079 EUR
50000+0.0077 EUR
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MCR03SEQPF5100 MCR03SEQPF5100 Rohm Semiconductor datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1608(0603)SIZE, HIGH POWER THICK
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Cut Tape (CT)
Resistance: 510 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
auf Bestellung 99976 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.19 EUR
1112+0.019 EUR
1250+0.017 EUR
1588+0.013 EUR
1774+0.012 EUR
1931+0.011 EUR
2071+0.01 EUR
2500+0.0093 EUR
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LTR100JZPF3902 LTR100JZPF3902 Rohm Semiconductor ltr-e.pdf Description: RES SMD 39K OHM 1% 3W 2512 WIDE
Resistance: 39 kOhms
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 1225
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 2512 (6432 Metric), 1225
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 3W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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LTR100JZPF3902 LTR100JZPF3902 Rohm Semiconductor ltr-e.pdf Description: RES SMD 39K OHM 1% 3W 2512 WIDE
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 2512 (6432 Metric), 1225
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 3W
Packaging: Cut Tape (CT)
Resistance: 39 kOhms
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 1225
auf Bestellung 3777 Stücke:
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19+1.13 EUR
32+0.67 EUR
37+0.57 EUR
50+0.51 EUR
100+0.46 EUR
250+0.42 EUR
500+0.38 EUR
1000+0.37 EUR
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ESR10EZPF1005 ESR10EZPF1005 Rohm Semiconductor esr-e.pdf Description: RES 10M OHM 1% 2/5W 0805
Resistance: 10 mOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W, 2/5W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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ESR10EZPF1005 ESR10EZPF1005 Rohm Semiconductor esr-e.pdf Description: RES 10M OHM 1% 2/5W 0805
Resistance: 10 mOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W, 2/5W
Packaging: Cut Tape (CT)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
129+0.17 EUR
163+0.13 EUR
194+0.11 EUR
225+0.093 EUR
270+0.077 EUR
500+0.069 EUR
1000+0.062 EUR
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LTR100LJZPFSR020 LTR100LJZPFSR020 Rohm Semiconductor ltr-low-e.pdf Description: RES SMD 0.02 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 20 mOhms
auf Bestellung 4000 Stücke:
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4000+0.86 EUR
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LTR100LJZPFSR020 LTR100LJZPFSR020 Rohm Semiconductor ltr-low-e.pdf Description: RES SMD 0.02 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 20 mOhms
auf Bestellung 7223 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.45 EUR
14+1.59 EUR
25+1.42 EUR
50+1.36 EUR
100+1.21 EUR
250+1.12 EUR
500+1.08 EUR
1000+1.05 EUR
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LTR100LJZPFSR030 LTR100LJZPFSR030 Rohm Semiconductor ltr-low-e.pdf Description: RES SMD 0.03 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 30 mOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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LTR100LJZPFSR030 LTR100LJZPFSR030 Rohm Semiconductor ltr-low-e.pdf Description: RES SMD 0.03 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 30 mOhms
auf Bestellung 5501 Stücke:
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9+2.45 EUR
15+1.4 EUR
25+1.24 EUR
50+1.2 EUR
100+1.13 EUR
250+1.12 EUR
500+1.07 EUR
1000+1.05 EUR
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LTR100LJZPFSR091 LTR100LJZPFSR091 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.091 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 91 mOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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LTR100LJZPFSR091 LTR100LJZPFSR091 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.091 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 91 mOhms
auf Bestellung 3513 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.45 EUR
14+1.59 EUR
25+1.4 EUR
50+1.3 EUR
100+1.21 EUR
250+1.12 EUR
500+1.07 EUR
1000+1.05 EUR
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LTR100LJZPFSR024 LTR100LJZPFSR024 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.024 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 24 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPFSR024 LTR100LJZPFSR024 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.024 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 24 mOhms
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50+1.25 EUR
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500+1.07 EUR
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LTR100LJZPFSR016 LTR100LJZPFSR016 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.016 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 16 mOhms
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LTR100LJZPFSR016 LTR100LJZPFSR016 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.016 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 16 mOhms
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LTR100LJZPFSR012 LTR100LJZPFSR012 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.012 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 12 mOhms
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LTR100LJZPFSR012 LTR100LJZPFSR012 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.012 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 12 mOhms
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50+1.3 EUR
100+1.21 EUR
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LTR100LJZPFSR022 LTR100LJZPFSR022 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.022 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 22 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPFSR022 LTR100LJZPFSR022 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.022 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 22 mOhms
auf Bestellung 3985 Stücke:
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25+1.42 EUR
50+1.3 EUR
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500+1.07 EUR
1000+1.05 EUR
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LTR100LJZPFSR039 LTR100LJZPFSR039 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.039 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 39 mOhms
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LTR100LJZPFSR039 LTR100LJZPFSR039 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.039 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 39 mOhms
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LTR100LJZPFSR062 LTR100LJZPFSR062 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.062 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 62 MOhms
Produkt ist nicht verfügbar
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LTR100LJZPFSR062 LTR100LJZPFSR062 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.062 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 62 MOhms
auf Bestellung 3773 Stücke:
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25+1.42 EUR
50+1.3 EUR
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500+1.07 EUR
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RB178VYM-40FHTR datasheet?p=RB178VYM-40FH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB178VYM-40FHTR
Hersteller: Rohm Semiconductor
Description: 40V, 1A, SOD-323HE, SCHOTTKY BAR
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 40 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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20+1.09 EUR
32+0.67 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
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RH7L03BBKFRATCB datasheet?p=RH7L03BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L03BBKFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 35A, DFN3333T8LSAB, POWE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN3333T8LSAB
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RH7L03BBKFRATCB datasheet?p=RH7L03BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L03BBKFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 35A, DFN3333T8LSAB, POWE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN3333T8LSAB
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
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7+3.12 EUR
11+1.99 EUR
100+1.33 EUR
500+1.06 EUR
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LTR100JZPFLR300 ltr-low-e.pdf
LTR100JZPFLR300
Hersteller: Rohm Semiconductor
Description: RES SMD 0.3 OHM 1% 3W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 300 mOhms
Produkt ist nicht verfügbar
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LTR100JZPFLR300 ltr-low-e.pdf
LTR100JZPFLR300
Hersteller: Rohm Semiconductor
Description: RES SMD 0.3 OHM 1% 3W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 300 mOhms
auf Bestellung 6609 Stücke:
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12+1.8 EUR
19+1.14 EUR
25+0.96 EUR
50+0.9 EUR
100+0.84 EUR
250+0.77 EUR
500+0.73 EUR
1000+0.69 EUR
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ESR03EZPF9102 esr-e.pdf
ESR03EZPF9102
Hersteller: Rohm Semiconductor
Description: RES 91K OHM 1% 1/4W 0603
Resistance: 91 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
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5000+0.039 EUR
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ESR03EZPF9102 esr-e.pdf
ESR03EZPF9102
Hersteller: Rohm Semiconductor
Description: RES 91K OHM 1% 1/4W 0603
Resistance: 91 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
77+0.27 EUR
157+0.13 EUR
200+0.1 EUR
239+0.088 EUR
279+0.075 EUR
339+0.062 EUR
500+0.055 EUR
1000+0.049 EUR
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RB228NS-30TL datasheet?p=RB228NS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS-30TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Produkt ist nicht verfügbar
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RB228NS-30TL datasheet?p=RB228NS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS-30TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
auf Bestellung 821 Stücke:
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5+4.19 EUR
10+2.87 EUR
100+2.09 EUR
500+1.69 EUR
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RB228NS-30FHTL datasheet?p=RB228NS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS-30FHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RB228NS-30FHTL datasheet?p=RB228NS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS-30FHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 999 Stücke:
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AnzahlPrivatkunde
5+4.44 EUR
10+2.89 EUR
100+2.26 EUR
500+1.86 EUR
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RB228NS-60FHTL datasheet?p=RB228NS-60FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS-60FHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RB228NS-60FHTL datasheet?p=RB228NS-60FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS-60FHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
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RB228NS-40TL datasheet?p=RB228NS-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS-40TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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RB228NS-40TL datasheet?p=RB228NS-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS-40TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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RQ3L270BJFRATCB rq3l270bjfratcb-e.pdf
RQ3L270BJFRATCB
Hersteller: Rohm Semiconductor
Description: PCH -60V -27A, HSMT8AG, POWER MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 27A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 584µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V
Qualification: AEC-Q101
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RQ3L270BJFRATCB rq3l270bjfratcb-e.pdf
RQ3L270BJFRATCB
Hersteller: Rohm Semiconductor
Description: PCH -60V -27A, HSMT8AG, POWER MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 27A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 584µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V
Qualification: AEC-Q101
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10+2.17 EUR
100+1.44 EUR
500+1.18 EUR
1000+1.07 EUR
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SDR03EZPF1202 sdr-e.pdf
SDR03EZPF1202
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Tape & Reel (TR)
Resistance: 12 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Produkt ist nicht verfügbar
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SDR03EZPF1202 sdr-e.pdf
SDR03EZPF1202
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 12 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Cut Tape (CT)
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72+0.3 EUR
148+0.14 EUR
190+0.11 EUR
225+0.093 EUR
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318+0.065 EUR
500+0.058 EUR
1000+0.052 EUR
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SDR03EZPF12R0 sdr-e.pdf
SDR03EZPF12R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Tape & Reel (TR)
Resistance: 12 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Produkt ist nicht verfügbar
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SDR03EZPF12R0 sdr-e.pdf
SDR03EZPF12R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 12 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Cut Tape (CT)
auf Bestellung 1595 Stücke:
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72+0.3 EUR
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190+0.11 EUR
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263+0.08 EUR
318+0.065 EUR
500+0.058 EUR
1000+0.052 EUR
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SH8MC4TB1 sh8mc4tb1-e.pdf
SH8MC4TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 3.5A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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2500+0.77 EUR
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SH8MC4TB1 sh8mc4tb1-e.pdf
SH8MC4TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 3.5A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2500 Stücke:
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8+2.84 EUR
12+1.8 EUR
100+1.2 EUR
500+0.94 EUR
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BD67872MWV-ZE2 datasheet?p=BD67872MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD67872MWV-ZE2
Hersteller: Rohm Semiconductor
Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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BD67872MWV-ZE2 datasheet?p=BD67872MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD67872MWV-ZE2
Hersteller: Rohm Semiconductor
Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2486 Stücke:
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5+5.02 EUR
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BD67870MWV-ZE2 datasheet?p=BD67870MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD67870MWV-ZE2
Hersteller: Rohm Semiconductor
Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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BD67870MWV-ZE2 datasheet?p=BD67870MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD67870MWV-ZE2
Hersteller: Rohm Semiconductor
Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2489 Stücke:
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BD67871MWV-ZE2 datasheet?p=BD67871MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD67871MWV-ZE2
Hersteller: Rohm Semiconductor
Description: TRIC3 4.5 V TO 60 V, THREE-PHASE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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BD67871MWV-ZE2 datasheet?p=BD67871MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD67871MWV-ZE2
Hersteller: Rohm Semiconductor
Description: TRIC3 4.5 V TO 60 V, THREE-PHASE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2487 Stücke:
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BD67871MWV-EVK-003 bd67871mwv-z-e.pdf
BD67871MWV-EVK-003
Hersteller: Rohm Semiconductor
Description: EVALUATION BOARD - BD67871MWV-EV
Packaging: Bulk
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BD67872MWV-EVK-003 bd67872mwv-z-e.pdf
BD67872MWV-EVK-003
Hersteller: Rohm Semiconductor
Description: EVALUATION BOARD - BD67872MWV-EV
Packaging: Bulk
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BD67870MWV-EVK-003 bd67870mwv-z-e.pdf
BD67870MWV-EVK-003
Hersteller: Rohm Semiconductor
Description: EVALUATION BOARD - BD67870MWV-EV
Packaging: Bulk
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R8011KNZ4C13 r8011knz4c13-e.pdf
R8011KNZ4C13
Hersteller: Rohm Semiconductor
Description: NCH 800V 11A, TO-247AD, HIGH-SPE
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
auf Bestellung 600 Stücke:
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R8011KNZ4C13 r8011knz4c13-e.pdf
R8011KNZ4C13
Hersteller: Rohm Semiconductor
Description: NCH 800V 11A, TO-247AD, HIGH-SPE
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
auf Bestellung 600 Stücke:
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100+7.62 EUR
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RH6E040BGTB1 rh6e040bgtb1-e.pdf
RH6E040BGTB1
Hersteller: Rohm Semiconductor
Description: NCH 30V 125A, HSMT8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 40A, 10V
Power Dissipation (Max): 2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 3000 Stücke:
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3000+1.14 EUR
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RH6E040BGTB1 rh6e040bgtb1-e.pdf
RH6E040BGTB1
Hersteller: Rohm Semiconductor
Description: NCH 30V 125A, HSMT8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 40A, 10V
Power Dissipation (Max): 2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.05 EUR
10+2.58 EUR
100+1.76 EUR
500+1.4 EUR
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MCR03SEQPF5100 datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR03SEQPF5100
Hersteller: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Resistance: 510 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
auf Bestellung 95000 Stücke:
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AnzahlPrivatkunde
5000+0.0088 EUR
10000+0.0084 EUR
15000+0.0082 EUR
25000+0.008 EUR
35000+0.0079 EUR
50000+0.0077 EUR
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MCR03SEQPF5100 datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR03SEQPF5100
Hersteller: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Cut Tape (CT)
Resistance: 510 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
auf Bestellung 99976 Stücke:
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112+0.19 EUR
1112+0.019 EUR
1250+0.017 EUR
1588+0.013 EUR
1774+0.012 EUR
1931+0.011 EUR
2071+0.01 EUR
2500+0.0093 EUR
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LTR100JZPF3902 ltr-e.pdf
LTR100JZPF3902
Hersteller: Rohm Semiconductor
Description: RES SMD 39K OHM 1% 3W 2512 WIDE
Resistance: 39 kOhms
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 1225
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 2512 (6432 Metric), 1225
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 3W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LTR100JZPF3902 ltr-e.pdf
LTR100JZPF3902
Hersteller: Rohm Semiconductor
Description: RES SMD 39K OHM 1% 3W 2512 WIDE
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 2512 (6432 Metric), 1225
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 3W
Packaging: Cut Tape (CT)
Resistance: 39 kOhms
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 1225
auf Bestellung 3777 Stücke:
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19+1.13 EUR
32+0.67 EUR
37+0.57 EUR
50+0.51 EUR
100+0.46 EUR
250+0.42 EUR
500+0.38 EUR
1000+0.37 EUR
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ESR10EZPF1005 esr-e.pdf
ESR10EZPF1005
Hersteller: Rohm Semiconductor
Description: RES 10M OHM 1% 2/5W 0805
Resistance: 10 mOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W, 2/5W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESR10EZPF1005 esr-e.pdf
ESR10EZPF1005
Hersteller: Rohm Semiconductor
Description: RES 10M OHM 1% 2/5W 0805
Resistance: 10 mOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W, 2/5W
Packaging: Cut Tape (CT)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
129+0.17 EUR
163+0.13 EUR
194+0.11 EUR
225+0.093 EUR
270+0.077 EUR
500+0.069 EUR
1000+0.062 EUR
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LTR100LJZPFSR020 ltr-low-e.pdf
LTR100LJZPFSR020
Hersteller: Rohm Semiconductor
Description: RES SMD 0.02 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 20 mOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.86 EUR
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LTR100LJZPFSR020 ltr-low-e.pdf
LTR100LJZPFSR020
Hersteller: Rohm Semiconductor
Description: RES SMD 0.02 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 20 mOhms
auf Bestellung 7223 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
14+1.59 EUR
25+1.42 EUR
50+1.36 EUR
100+1.21 EUR
250+1.12 EUR
500+1.08 EUR
1000+1.05 EUR
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LTR100LJZPFSR030 ltr-low-e.pdf
LTR100LJZPFSR030
Hersteller: Rohm Semiconductor
Description: RES SMD 0.03 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 30 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPFSR030 ltr-low-e.pdf
LTR100LJZPFSR030
Hersteller: Rohm Semiconductor
Description: RES SMD 0.03 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 30 mOhms
auf Bestellung 5501 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
15+1.4 EUR
25+1.24 EUR
50+1.2 EUR
100+1.13 EUR
250+1.12 EUR
500+1.07 EUR
1000+1.05 EUR
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LTR100LJZPFSR091 ltr-low-e.pdf
LTR100LJZPFSR091
Hersteller: Rohm Semiconductor
Description: RES 0.091 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 91 mOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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LTR100LJZPFSR091 ltr-low-e.pdf
LTR100LJZPFSR091
Hersteller: Rohm Semiconductor
Description: RES 0.091 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 91 mOhms
auf Bestellung 3513 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
14+1.59 EUR
25+1.4 EUR
50+1.3 EUR
100+1.21 EUR
250+1.12 EUR
500+1.07 EUR
1000+1.05 EUR
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LTR100LJZPFSR024 ltr-low-e.pdf
LTR100LJZPFSR024
Hersteller: Rohm Semiconductor
Description: RES 0.024 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 24 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPFSR024 ltr-low-e.pdf
LTR100LJZPFSR024
Hersteller: Rohm Semiconductor
Description: RES 0.024 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 24 mOhms
auf Bestellung 3474 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
15+1.4 EUR
25+1.27 EUR
50+1.25 EUR
100+1.21 EUR
250+1.12 EUR
500+1.07 EUR
1000+1.05 EUR
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LTR100LJZPFSR016 ltr-low-e.pdf
LTR100LJZPFSR016
Hersteller: Rohm Semiconductor
Description: RES 0.016 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 16 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPFSR016 ltr-low-e.pdf
LTR100LJZPFSR016
Hersteller: Rohm Semiconductor
Description: RES 0.016 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 16 mOhms
auf Bestellung 3210 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
15+1.46 EUR
25+1.26 EUR
50+1.24 EUR
100+1.13 EUR
250+1.09 EUR
500+1.07 EUR
1000+1.05 EUR
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LTR100LJZPFSR012 ltr-low-e.pdf
LTR100LJZPFSR012
Hersteller: Rohm Semiconductor
Description: RES 0.012 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 12 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPFSR012 ltr-low-e.pdf
LTR100LJZPFSR012
Hersteller: Rohm Semiconductor
Description: RES 0.012 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 12 mOhms
auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
14+1.59 EUR
25+1.42 EUR
50+1.3 EUR
100+1.21 EUR
250+1.12 EUR
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LTR100LJZPFSR022 ltr-low-e.pdf
LTR100LJZPFSR022
Hersteller: Rohm Semiconductor
Description: RES 0.022 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 22 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPFSR022 ltr-low-e.pdf
LTR100LJZPFSR022
Hersteller: Rohm Semiconductor
Description: RES 0.022 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 22 mOhms
auf Bestellung 3985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
14+1.59 EUR
25+1.42 EUR
50+1.3 EUR
100+1.21 EUR
250+1.12 EUR
500+1.07 EUR
1000+1.05 EUR
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LTR100LJZPFSR039 ltr-low-e.pdf
LTR100LJZPFSR039
Hersteller: Rohm Semiconductor
Description: RES 0.039 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 39 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPFSR039 ltr-low-e.pdf
LTR100LJZPFSR039
Hersteller: Rohm Semiconductor
Description: RES 0.039 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 39 mOhms
auf Bestellung 3866 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
14+1.59 EUR
25+1.42 EUR
50+1.3 EUR
100+1.21 EUR
250+1.12 EUR
500+1.07 EUR
1000+1.05 EUR
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LTR100LJZPFSR062 ltr-low-e.pdf
LTR100LJZPFSR062
Hersteller: Rohm Semiconductor
Description: RES 0.062 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 62 MOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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LTR100LJZPFSR062 ltr-low-e.pdf
LTR100LJZPFSR062
Hersteller: Rohm Semiconductor
Description: RES 0.062 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 62 MOhms
auf Bestellung 3773 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
14+1.59 EUR
25+1.42 EUR
50+1.3 EUR
100+1.21 EUR
250+1.12 EUR
500+1.07 EUR
1000+1.05 EUR
Mindestbestellmenge: 9 Stücke
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