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RSS090N03FU6TB RSS090N03FU6TB Rohm Semiconductor rss090n03.pdf Description: MOSFET N-CH 30V 9A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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RSS090P03TB RSS090P03TB Rohm Semiconductor rss090p03.pdf Description: MOSFET P-CH 30V 9A 8-SOIC
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RSS100N03TB RSS100N03TB Rohm Semiconductor rss100n03.pdf Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
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RSS105N03TB RSS105N03TB Rohm Semiconductor rss105n03.pdf Description: MOSFET N-CH 30V 10.5A 8-SOIC
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RSS110N03TB RSS110N03TB Rohm Semiconductor rss110n03.pdf Description: MOSFET N-CH 30V 11A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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RSS120N03TB RSS120N03TB Rohm Semiconductor rss120n03.pdf Description: MOSFET N-CH 30V 12A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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RSS125N03TB RSS125N03TB Rohm Semiconductor rss125n03.pdf Description: MOSFET N-CH 30V 12.5A 8-SOIC
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RSS140N03TB RSS140N03TB Rohm Semiconductor rss140n03.pdf Description: MOSFET N-CH 30V 14A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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RSX101VA-30TR RSX101VA-30TR Rohm Semiconductor rsx101va-30.pdf Description: DIODE SCHOTTKY 30V 1A TUMD2
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SM6K2T110 SM6K2T110 Rohm Semiconductor sm6k2.pdf Description: MOSFET 2N-CH 60V 0.2A SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT6
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SP8J1TB SP8J1TB Rohm Semiconductor sp8j1.pdf Description: MOSFET 2P-CH 30V 5A 8-SOIC
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SP8J2TB SP8J2TB Rohm Semiconductor sp8j2.pdf Description: MOSFET 2P-CH 30V 4.5A 8-SOIC
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SP8J4TB SP8J4TB Rohm Semiconductor sp8j4.pdf Description: MOSFET 2P-CH 30V 2A 8-SOIC
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SP8J5TB SP8J5TB Rohm Semiconductor sp8j5.pdf Description: MOSFET 2P-CH 30V 7A 8-SOIC
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SP8K1TB SP8K1TB Rohm Semiconductor sp8k1.pdf Description: MOSFET 2N-CH 30V 5A 8-SOIC
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SP8K2TB SP8K2TB Rohm Semiconductor datasheet?p=SP8K2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8K3TB SP8K3TB Rohm Semiconductor datasheet?p=SP8K3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 7A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
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SP8K5TB SP8K5TB Rohm Semiconductor sp8k5.pdf Description: MOSFET 2N-CH 30V 3.5A 8-SOIC
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SST6838T216 SST6838T216 Rohm Semiconductor datasheet?p=SST6838&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 40V 0.2A SST3
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: SST3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 200 mW
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SSTA56T116 SSTA56T116 Rohm Semiconductor datasheet?p=SSTA56&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 80V 0.5A SST3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
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STZ5.6NT146 STZ5.6NT146 Rohm Semiconductor datasheet?p=STZ5.6N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER ARRAY 5.6V SMD3
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Power - Max: 200 mW
Supplier Device Package: SMD3
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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STZ6.2NT146 STZ6.2NT146 Rohm Semiconductor datasheet?p=STZ6.2N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER ARRAY 6.2V SMD3
Power - Max: 200 mW
Supplier Device Package: SMD3
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
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STZ6.8TT146 STZ6.8TT146 Rohm Semiconductor stz6.8t.pdf Description: DIODE ZENER ARRAY 6.8V SMD3
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UDZSTE-1711B UDZSTE-1711B Rohm Semiconductor datasheet?p=UDZS11B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 11V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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UDZSTE-1713B UDZSTE-1713B Rohm Semiconductor datasheet?p=UDZS13B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 13V 200MW UMD2
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 37 Ohms
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UDZSTE-1716B UDZSTE-1716B Rohm Semiconductor datasheet?p=UDZS16B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 16V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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UDZSTE-1720B UDZSTE-1720B Rohm Semiconductor datasheet?p=UDZS20B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 20V 200MW UMD2
Impedance (Max) (Zzt): 85 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
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UDZSTE-1724B UDZSTE-1724B Rohm Semiconductor datasheet?p=UDZS24B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 24V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 120 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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UDZSTE-1727B UDZSTE-1727B Rohm Semiconductor datasheet?p=UDZS27B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 27V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 150 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
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UDZSTE-1730B UDZSTE-1730B Rohm Semiconductor datasheet?p=UDZS30B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 30V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
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UDZSTE-1733B UDZSTE-1733B Rohm Semiconductor datasheet?p=UDZS33B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 33V 200MW UMD2
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Power - Max: 200 mW
Part Status: Not For New Designs
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UDZSTE-1736B UDZSTE-1736B Rohm Semiconductor datasheet?p=UDZS36B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 36V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 300 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
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UDZSTE-174.3B UDZSTE-174.3B Rohm Semiconductor datasheet?p=UDZS4.3B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 4.3V 200MW UMD2
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
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UDZSTE-174.7B UDZSTE-174.7B Rohm Semiconductor datasheet?p=UDZS4.7B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 4.7V 200MW UMD2
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
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UDZSTE-178.2B UDZSTE-178.2B Rohm Semiconductor datasheet?p=UDZS8.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 8.2V 200MW UMD2
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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UM5K1NTR UM5K1NTR Rohm Semiconductor um5k1n.pdf Description: MOSFET 2N-CH 30V 0.1A UMT5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: UMT5
Produkt ist nicht verfügbar
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UMA10NTR UMA10NTR Rohm Semiconductor FMA10A, UMA10N.pdf Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT5
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UMA11NTR UMA11NTR Rohm Semiconductor EMA11, FMA11A, UMA11N.pdf Description: TRANS PREBIAS DUAL PNP UMT5
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
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UMA1NTR UMA1NTR Rohm Semiconductor datasheet?p=UMA1N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS DUAL PNP UMT5
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
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UMA2NTR UMA2NTR Rohm Semiconductor datasheet?p=UMA2N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS DUAL PNP UMT5
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
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UMA3NTR UMA3NTR Rohm Semiconductor datasheet?p=UMA3N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS DUAL PNP UMT5
Part Status: Active
Supplier Device Package: UMT5
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
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UMA5NTR UMA5NTR Rohm Semiconductor datasheet?p=UMA5N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS DUAL PNP UMT5
Part Status: Active
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
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UMA7NTR UMA7NTR Rohm Semiconductor EMA7, FMA7A, UMA7N.pdf Description: TRANS PREBIAS DUAL PNP UMT5
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
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UMA8NTR UMA8NTR Rohm Semiconductor EMA8%2C%20FMA8%2CUMA8N.pdf Description: TRANS PREBIAS DUAL PNP UMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Supplier Device Package: UMT5
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UMA9NTR UMA9NTR Rohm Semiconductor datasheet?p=UMA9N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS DUAL PNP UMT5
Part Status: Active
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
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UMB1NTN UMB1NTN Rohm Semiconductor FMA1A,%20IMB1A,5A,%20UMA1,%20UMB1N.pdf Description: TRANS PREBIAS DUAL PNP UMT6
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UMB2NTN UMB2NTN Rohm Semiconductor datasheet?p=UMB2N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS DUAL PNP UMT6
Part Status: Active
Supplier Device Package: UMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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UMB4NTN UMB4NTN Rohm Semiconductor datasheet?p=UMB4N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS DUAL PNP UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
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UMB8NTR UMB8NTR Rohm Semiconductor emb3t2r-e.pdf Description: TRANS PREBIAS DUAL PNP UMT6
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UMD12NTR UMD12NTR Rohm Semiconductor datasheet?p=UMD12N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS 1NPN 1PNP 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT6
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UMD2NTR UMD2NTR Rohm Semiconductor datasheet?p=UMD2N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP PREBIAS 0.15W UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: UMT6
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UMD6NTR UMD6NTR Rohm Semiconductor datasheet?p=UMD6N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP PREBIAS 0.15W UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: UMT6
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9000+0.13 EUR
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UMD9NTR UMD9NTR Rohm Semiconductor datasheet?p=UMD9N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS 1NPN 1PNP 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT6
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UMF4NTR UMF4NTR Rohm Semiconductor umf4n.pdf Description: TRANS NPN PREBIAS/PNP 0.15W UMT6
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UMF5NTR UMF5NTR Rohm Semiconductor umf5n-e.pdf Description: TRANS NPN PREBIAS/PNP 0.15W UMT6
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UMF6NTR UMF6NTR Rohm Semiconductor umf6n.pdf Description: TRANS PNP/N-CH 12V 500MA SOT-363
Supplier Device Package: UMT6
Applications: General Purpose
Transistor Type: PNP, N-Channel
Mounting Type: Surface Mount
Current Rating (Amps): 500mA PNP, 100mA N-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Voltage - Rated: 12V PNP, 30V N-Channel
Packaging: Tape & Reel (TR)
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UMF9NTR UMF9NTR Rohm Semiconductor umf9n.pdf Description: TRANS NPN/N-CH 12V 500MA SOT-363
Supplier Device Package: UMT6
Applications: General Purpose
Transistor Type: NPN, N-Channel
Mounting Type: Surface Mount
Current Rating (Amps): 500mA NPN, 100mA N-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Voltage - Rated: 12V NPN, 30V N-Channel
Packaging: Tape & Reel (TR)
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UMG11NTR UMG11NTR Rohm Semiconductor datasheet?p=UMG11N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 0.15W UMT5
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
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UMG1NTR UMG1NTR Rohm Semiconductor datasheet?p=UMG1N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS 2NPN 50V UMT5
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
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UMG3NTR UMG3NTR Rohm Semiconductor datasheet?p=UMG3N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 0.15W UMT5
Supplier Device Package: UMT5
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
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RSS090N03FU6TB rss090n03.pdf
RSS090N03FU6TB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 9A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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RSS090P03TB rss090p03.pdf
RSS090P03TB
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 9A 8-SOIC
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RSS100N03TB rss100n03.pdf
RSS100N03TB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
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RSS105N03TB rss105n03.pdf
RSS105N03TB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10.5A 8-SOIC
Produkt ist nicht verfügbar
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RSS110N03TB rss110n03.pdf
RSS110N03TB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RSS120N03TB rss120n03.pdf
RSS120N03TB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RSS125N03TB rss125n03.pdf
RSS125N03TB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A 8-SOIC
Produkt ist nicht verfügbar
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RSS140N03TB rss140n03.pdf
RSS140N03TB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 14A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RSX101VA-30TR rsx101va-30.pdf
RSX101VA-30TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2
Produkt ist nicht verfügbar
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SM6K2T110 sm6k2.pdf
SM6K2T110
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 0.2A SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT6
auf Bestellung 9000 Stücke:
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Anzahl Preis
3000+0.26 EUR
6000+0.24 EUR
9000+0.22 EUR
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SP8J1TB sp8j1.pdf
SP8J1TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 5A 8-SOIC
Produkt ist nicht verfügbar
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SP8J2TB sp8j2.pdf
SP8J2TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4.5A 8-SOIC
Produkt ist nicht verfügbar
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SP8J4TB sp8j4.pdf
SP8J4TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 2A 8-SOIC
Produkt ist nicht verfügbar
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SP8J5TB sp8j5.pdf
SP8J5TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 7A 8-SOIC
Produkt ist nicht verfügbar
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SP8K1TB sp8k1.pdf
SP8K1TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5A 8-SOIC
Produkt ist nicht verfügbar
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SP8K2TB datasheet?p=SP8K2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8K2TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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SP8K3TB datasheet?p=SP8K3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8K3TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 7A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Produkt ist nicht verfügbar
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SP8K5TB sp8k5.pdf
SP8K5TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A 8-SOIC
Produkt ist nicht verfügbar
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SST6838T216 datasheet?p=SST6838&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SST6838T216
Hersteller: Rohm Semiconductor
Description: TRANS NPN 40V 0.2A SST3
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: SST3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 200 mW
Produkt ist nicht verfügbar
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SSTA56T116 datasheet?p=SSTA56&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SSTA56T116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 80V 0.5A SST3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.22 EUR
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STZ5.6NT146 datasheet?p=STZ5.6N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
STZ5.6NT146
Hersteller: Rohm Semiconductor
Description: DIODE ZENER ARRAY 5.6V SMD3
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Power - Max: 200 mW
Supplier Device Package: SMD3
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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Anzahl Preis
3000+0.29 EUR
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STZ6.2NT146 datasheet?p=STZ6.2N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
STZ6.2NT146
Hersteller: Rohm Semiconductor
Description: DIODE ZENER ARRAY 6.2V SMD3
Power - Max: 200 mW
Supplier Device Package: SMD3
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
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Anzahl Preis
3000+0.33 EUR
6000+0.32 EUR
9000+0.29 EUR
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STZ6.8TT146 stz6.8t.pdf
STZ6.8TT146
Hersteller: Rohm Semiconductor
Description: DIODE ZENER ARRAY 6.8V SMD3
Produkt ist nicht verfügbar
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UDZSTE-1711B datasheet?p=UDZS11B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZSTE-1711B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
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Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
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UDZSTE-1713B datasheet?p=UDZS13B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZSTE-1713B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 13V 200MW UMD2
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 37 Ohms
Produkt ist nicht verfügbar
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UDZSTE-1716B datasheet?p=UDZS16B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZSTE-1716B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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Anzahl Preis
3000+0.12 EUR
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UDZSTE-1720B datasheet?p=UDZS20B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZSTE-1720B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 20V 200MW UMD2
Impedance (Max) (Zzt): 85 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Produkt ist nicht verfügbar
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UDZSTE-1724B datasheet?p=UDZS24B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZSTE-1724B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 24V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 120 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
auf Bestellung 60000 Stücke:
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Anzahl Preis
3000+0.064 EUR
6000+0.057 EUR
9000+0.054 EUR
15000+0.05 EUR
21000+0.048 EUR
30000+0.045 EUR
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UDZSTE-1727B datasheet?p=UDZS27B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZSTE-1727B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 27V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 150 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
auf Bestellung 39000 Stücke:
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Anzahl Preis
3000+0.05 EUR
6000+0.045 EUR
9000+0.042 EUR
15000+0.039 EUR
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UDZSTE-1730B datasheet?p=UDZS30B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZSTE-1730B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 30V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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UDZSTE-1733B datasheet?p=UDZS33B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZSTE-1733B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 33V 200MW UMD2
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Power - Max: 200 mW
Part Status: Not For New Designs
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3000+0.11 EUR
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UDZSTE-1736B datasheet?p=UDZS36B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZSTE-1736B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 36V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 300 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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UDZSTE-174.3B datasheet?p=UDZS4.3B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZSTE-174.3B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 4.3V 200MW UMD2
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
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Anzahl Preis
3000+0.12 EUR
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UDZSTE-174.7B datasheet?p=UDZS4.7B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZSTE-174.7B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 4.7V 200MW UMD2
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
auf Bestellung 18000 Stücke:
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Anzahl Preis
3000+0.11 EUR
6000+0.1 EUR
9000+0.083 EUR
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UDZSTE-178.2B datasheet?p=UDZS8.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZSTE-178.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.2V 200MW UMD2
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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UM5K1NTR um5k1n.pdf
UM5K1NTR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 0.1A UMT5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: UMT5
Produkt ist nicht verfügbar
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UMA10NTR FMA10A, UMA10N.pdf
UMA10NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT5
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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UMA11NTR EMA11, FMA11A, UMA11N.pdf
UMA11NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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UMA1NTR datasheet?p=UMA1N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMA1NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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UMA2NTR datasheet?p=UMA2N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMA2NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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UMA3NTR datasheet?p=UMA3N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMA3NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
Part Status: Active
Supplier Device Package: UMT5
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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UMA5NTR datasheet?p=UMA5N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMA5NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
Part Status: Active
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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UMA7NTR EMA7, FMA7A, UMA7N.pdf
UMA7NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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UMA8NTR EMA8%2C%20FMA8%2CUMA8N.pdf
UMA8NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Supplier Device Package: UMT5
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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UMA9NTR datasheet?p=UMA9N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMA9NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
Part Status: Active
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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UMB1NTN FMA1A,%20IMB1A,5A,%20UMA1,%20UMB1N.pdf
UMB1NTN
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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UMB2NTN datasheet?p=UMB2N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMB2NTN
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT6
Part Status: Active
Supplier Device Package: UMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000 Stücke
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UMB4NTN datasheet?p=UMB4N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMB4NTN
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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UMB8NTR emb3t2r-e.pdf
UMB8NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT6
Produkt ist nicht verfügbar
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UMD12NTR datasheet?p=UMD12N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMD12NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UMD2NTR datasheet?p=UMD2N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMD2NTR
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: UMT6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
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UMD6NTR datasheet?p=UMD6N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMD6NTR
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: UMT6
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
9000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
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UMD9NTR datasheet?p=UMD9N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMD9NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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UMF4NTR umf4n.pdf
UMF4NTR
Hersteller: Rohm Semiconductor
Description: TRANS NPN PREBIAS/PNP 0.15W UMT6
Produkt ist nicht verfügbar
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UMF5NTR umf5n-e.pdf
UMF5NTR
Hersteller: Rohm Semiconductor
Description: TRANS NPN PREBIAS/PNP 0.15W UMT6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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UMF6NTR umf6n.pdf
UMF6NTR
Hersteller: Rohm Semiconductor
Description: TRANS PNP/N-CH 12V 500MA SOT-363
Supplier Device Package: UMT6
Applications: General Purpose
Transistor Type: PNP, N-Channel
Mounting Type: Surface Mount
Current Rating (Amps): 500mA PNP, 100mA N-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Voltage - Rated: 12V PNP, 30V N-Channel
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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UMF9NTR umf9n.pdf
UMF9NTR
Hersteller: Rohm Semiconductor
Description: TRANS NPN/N-CH 12V 500MA SOT-363
Supplier Device Package: UMT6
Applications: General Purpose
Transistor Type: NPN, N-Channel
Mounting Type: Surface Mount
Current Rating (Amps): 500mA NPN, 100mA N-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Voltage - Rated: 12V NPN, 30V N-Channel
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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UMG11NTR datasheet?p=UMG11N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMG11NTR
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W UMT5
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UMG1NTR datasheet?p=UMG1N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMG1NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V UMT5
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UMG3NTR datasheet?p=UMG3N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMG3NTR
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W UMT5
Supplier Device Package: UMT5
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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