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BM6205FS-EVK-001 BM6205FS-EVK-001 Rohm Semiconductor Description: EVAL BOARD FOR BM6205
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6205
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BM6206FS-EVK-001 BM6206FS-EVK-001 Rohm Semiconductor Description: EVAL BOARD FOR BM6206
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6206
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BM6207FS-EVK-001 BM6207FS-EVK-001 Rohm Semiconductor BM6207FS.pdf Description: EVAL BOARD FOR BM6207
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6207
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BM6209FS-EVK-001 BM6209FS-EVK-001 Rohm Semiconductor BM6209FS.pdf Description: EVAL BOARD FOR BM6209
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6209
Produkt ist nicht verfügbar
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2SCR293P5T100 2SCR293P5T100 Rohm Semiconductor datasheet?p=2SCR293P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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2SCR372P5T100R 2SCR372P5T100R Rohm Semiconductor 2scr372p5t100q-e.pdf Description: TRANS NPN 120V 0.7A MPT3
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
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2SCR372P5T100Q 2SCR372P5T100Q Rohm Semiconductor datasheet?p=2SCR372P5&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS NPN 120V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
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2SCR375P5T100R 2SCR375P5T100R Rohm Semiconductor 2scr375p5t100q-e.pdf Description: TRANS NPN 120V 1.5A MPT3
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2SCR375P5T100Q 2SCR375P5T100Q Rohm Semiconductor 2scr375p5t100q-e.pdf Description: TRANS NPN 120V 1.5A MPT3
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2SCR512P5T100 2SCR512P5T100 Rohm Semiconductor datasheet?p=2SCR512P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 2A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SCR513P5T100 2SCR513P5T100 Rohm Semiconductor datasheet?p=2SCR513P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2SCR514P5T100 2SCR514P5T100 Rohm Semiconductor datasheet?p=2SCR514P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 0.7A MPT3
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
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2SCR533P5T100 2SCR533P5T100 Rohm Semiconductor datasheet?p=2SCR533P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SCR544P5T100 2SCR544P5T100 Rohm Semiconductor datasheet?p=2SCR544P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 2.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 2.5 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SCR552P5T100 2SCR552P5T100 Rohm Semiconductor datasheet?p=2SCR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SCR553P5T100 2SCR553P5T100 Rohm Semiconductor datasheet?p=2SCR553P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 2A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 360MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SCR554P5T100 2SCR554P5T100 Rohm Semiconductor datasheet?p=2SCR554P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 1.5A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 300MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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SCT3022ALGC11 SCT3022ALGC11 Rohm Semiconductor datasheet?p=SCT3022AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 650V 93A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Power Dissipation (Max): 339W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
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SCT3030ALGC11 SCT3030ALGC11 Rohm Semiconductor datasheet?p=SCT3030AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 650V 70A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
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SCT3030KLGC11 SCT3030KLGC11 Rohm Semiconductor datasheet?p=SCT3030KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 72A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 339W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V
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SCT3040KLGC11 SCT3040KLGC11 Rohm Semiconductor datasheet?p=SCT3040KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 55A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800
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SCT3060ALGC11 SCT3060ALGC11 Rohm Semiconductor datasheet?p=SCT3060AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 650V 39A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
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SCT3080KLGC11 SCT3080KLGC11 Rohm Semiconductor datasheet?p=SCT3080KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
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SCT3120ALGC11 SCT3120ALGC11 Rohm Semiconductor datasheet?p=SCT3120AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 650V 21A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
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SCT3160KLGC11 SCT3160KLGC11 Rohm Semiconductor datasheet?p=SCT3160KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 17A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800
auf Bestellung 3719 Stücke:
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30+12.96 EUR
120+11.04 EUR
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FDZT40RB6.8 FDZT40RB6.8 Rohm Semiconductor FDZ6.8.pdf Description: DIODE ZENER 6.8V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Produkt ist nicht verfügbar
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SCT3080ALGC11 SCT3080ALGC11 Rohm Semiconductor datasheet?p=SCT3080AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 650V 30A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
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BD68610EFV-E2 BD68610EFV-E2 Rohm Semiconductor datasheet?p=BD68610EFV&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MTR DRV BIPLR 19-28V 20HTSSOP
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 20-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
Operating Temperature: -25°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 600mA
Produkt ist nicht verfügbar
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BD68610EFV-E2 BD68610EFV-E2 Rohm Semiconductor datasheet?p=BD68610EFV&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MTR DRV BIPLR 19-28V 20HTSSOP
Operating Temperature: -25°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 600mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 20-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
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BD57020MWV-E2 BD57020MWV-E2 Rohm Semiconductor uqfn040v5050_1-e.pdf Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Supply: 5V
Applications: Wireless Power Transmitter
Supplier Device Package: UQFN040V5050
Part Status: Not For New Designs
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BD57015GWL-E2 BD57015GWL-E2 Rohm Semiconductor BD57015GWL.pdf Description: IC WIRELESS PWR REC UCSP50L4C
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 0V ~ 17.4V
Applications: Wireless Power Receiver
Current - Supply: 44mA, 27mA
Supplier Device Package: UCSP50L4C
Part Status: Not For New Designs
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BD57020MWV-E2 BD57020MWV-E2 Rohm Semiconductor uqfn040v5050_1-e.pdf Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Supply: 5V
Applications: Wireless Power Transmitter
Supplier Device Package: UQFN040V5050
Part Status: Not For New Designs
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BD57015GWL-E2 BD57015GWL-E2 Rohm Semiconductor BD57015GWL.pdf Description: IC WIRELESS PWR REC UCSP50L4C
Part Status: Not For New Designs
Supplier Device Package: UCSP50L4C
Current - Supply: 44mA, 27mA
Applications: Wireless Power Receiver
Voltage - Supply: 0V ~ 17.4V
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 63-UFBGA, WLCSP
Packaging: Cut Tape (CT)
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BD71815AGW-E2 BD71815AGW-E2 Rohm Semiconductor datasheet?p=BD71815AGW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG 13OUT BUCK/LDO 55UCSP
Packaging: Tape & Reel (TR)
Package / Case: 55-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V ~ 5.5V
Frequency - Switching: 6MHz
Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8)
Supplier Device Package: UCSP55M4C
Voltage/Current - Output 1: Programmable, 1A
Voltage/Current - Output 2: Programmable, 800mA
Voltage/Current - Output 3: Programmable, 500mA
w/LED Driver: Yes
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 13
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SCS205KGHRC SCS205KGHRC Rohm Semiconductor datasheet?p=SCS205KGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 1200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
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SCS206AGHRC SCS206AGHRC Rohm Semiconductor datasheet?p=SCS206AGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Qualification: AEC-Q101
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SCS208AGHRC SCS208AGHRC Rohm Semiconductor datasheet?p=SCS208AGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
Qualification: AEC-Q101
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SCS220AE2HRC SCS220AE2HRC Rohm Semiconductor ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Qualification: AEC-Q101
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SCS220AGHRC SCS220AGHRC Rohm Semiconductor datasheet?p=SCS220AGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Qualification: AEC-Q101
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SCS220KE2HRC SCS220KE2HRC Rohm Semiconductor ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS220KGHRC SCS220KGHRC Rohm Semiconductor datasheet?p=SCS220KGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 1200V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1060pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS230AE2HRC SCS230AE2HRC Rohm Semiconductor ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L Description: DIODE ARR SIC SCHOT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS240AE2HRC SCS240AE2HRC Rohm Semiconductor ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L Description: DIODE ARRAY SIC 650V 15A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BD71815AGW-E2 BD71815AGW-E2 Rohm Semiconductor datasheet?p=BD71815AGW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG 13OUT BUCK/LDO 55UCSP
Packaging: Cut Tape (CT)
Package / Case: 55-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V ~ 5.5V
Frequency - Switching: 6MHz
Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8)
Supplier Device Package: UCSP55M4C
Voltage/Current - Output 1: Programmable, 1A
Voltage/Current - Output 2: Programmable, 800mA
Voltage/Current - Output 3: Programmable, 500mA
w/LED Driver: Yes
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 13
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TFZVTR18B TFZVTR18B Rohm Semiconductor TFZV18B Description: ZENER DIODE
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TFZVTR16B TFZVTR16B Rohm Semiconductor TFZV16B Description: DIODE ZENER 16V 500MW SOD323HE
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TFZVTR13B TFZVTR13B Rohm Semiconductor TFZV13B Description: ZENER DIODE
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TFZVTR2.0B TFZVTR2.0B Rohm Semiconductor TFZV2.0B Description: ZENER DIODE
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TFZVTR36B TFZVTR36B Rohm Semiconductor datasheet?p=TFZV36B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 36V 500MW SOD323HE
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
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TFZVTR18B TFZVTR18B Rohm Semiconductor TFZV18B Description: ZENER DIODE
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TFZVTR16B TFZVTR16B Rohm Semiconductor TFZV16B Description: DIODE ZENER 16V 500MW SOD323HE
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TFZVTR13B TFZVTR13B Rohm Semiconductor TFZV13B Description: ZENER DIODE
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TFZVTR2.0B TFZVTR2.0B Rohm Semiconductor TFZV2.0B Description: ZENER DIODE
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TFZVTR36B TFZVTR36B Rohm Semiconductor datasheet?p=TFZV36B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 36V 500MW SOD323HE
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
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BD8374HFP-MTR BD8374HFP-MTR Rohm Semiconductor datasheet?p=BD8374HFP-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BU90R104-E2 BU90R104-E2 Rohm Semiconductor datasheet?p=BU90R104&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC RX/DESERIALIZER LVDS 64TQFP
Part Status: Active
Supplier Device Package: 64-TQFP (10x10)
Number of Inputs: 5
Input Type: LVDS
Data Rate: 3.92Gbps
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Deserializer
Number of Outputs: 35
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
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BU9796AMUV-E2 BU9796AMUV-E2 Rohm Semiconductor datasheet?p=BU9796AMUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC DRVR 48 SEGMENT VQFN024V4040
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Display Type: LCD
Mounting Type: Surface Mount
Interface: 2-Wire Serial
Configuration: 48 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: VQFN024V4040
Part Status: Active
Current - Supply: 12.5 µA
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RE1J002YNTCL RE1J002YNTCL Rohm Semiconductor datasheet?p=RE1J002YN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 50V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
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SML-522MU8WT86 SML-522MU8WT86 Rohm Semiconductor datasheet?p=SML-522MU8W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN/RED DIFFUSED 1315 SMD
Lens Size: 1.30mm x 1.10mm
Lens Style: Rectangle with Flat Top
Part Status: Active
Lens Transparency: Diffused
Supplier Device Package: 1315 (0605)
Wavelength - Dominant: 572nm Green, 620nm Red
Height (Max): 0.70mm
Current - Test: 20mA Green, 20mA Red
Lens Color: White
Voltage - Forward (Vf) (Typ): 2.2V Green, 2.2V Red
Configuration: Independent
Millicandela Rating: 40mcd Green, 63mcd Red
Mounting Type: Surface Mount
Size / Dimension: 1.50mm L x 1.30mm W
Color: Green, Red
Package / Case: 0605 (1513 Metric)
Packaging: Cut Tape (CT)
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SML-H12M8TT86 SML-H12M8TT86 Rohm Semiconductor datasheet?p=SML-H12M8T&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN CLEAR 0805 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 25mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 572nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
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BM6205FS-EVK-001
BM6205FS-EVK-001
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BM6205
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6205
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BM6206FS-EVK-001
BM6206FS-EVK-001
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BM6206
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6206
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BM6207FS-EVK-001 BM6207FS.pdf
BM6207FS-EVK-001
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BM6207
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6207
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BM6209FS-EVK-001 BM6209FS.pdf
BM6209FS-EVK-001
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BM6209
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6209
Produkt ist nicht verfügbar
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2SCR293P5T100 datasheet?p=2SCR293P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR293P5T100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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2SCR372P5T100R 2scr372p5t100q-e.pdf
2SCR372P5T100R
Hersteller: Rohm Semiconductor
Description: TRANS NPN 120V 0.7A MPT3
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
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2SCR372P5T100Q datasheet?p=2SCR372P5&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SCR372P5T100Q
Hersteller: Rohm Semiconductor
Description: TRANS NPN 120V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
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2SCR375P5T100R 2scr375p5t100q-e.pdf
2SCR375P5T100R
Hersteller: Rohm Semiconductor
Description: TRANS NPN 120V 1.5A MPT3
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2SCR375P5T100Q 2scr375p5t100q-e.pdf
2SCR375P5T100Q
Hersteller: Rohm Semiconductor
Description: TRANS NPN 120V 1.5A MPT3
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2SCR512P5T100 datasheet?p=2SCR512P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR512P5T100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 2A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SCR513P5T100 datasheet?p=2SCR513P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR513P5T100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2SCR514P5T100 datasheet?p=2SCR514P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR514P5T100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 0.7A MPT3
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
auf Bestellung 1380 Stücke:
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2SCR533P5T100 datasheet?p=2SCR533P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR533P5T100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 603 Stücke:
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2SCR544P5T100 datasheet?p=2SCR544P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR544P5T100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 2.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 2.5 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 939 Stücke:
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13+1.68 EUR
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2SCR552P5T100 datasheet?p=2SCR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR552P5T100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 128344 Stücke:
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13+1.65 EUR
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2SCR553P5T100 datasheet?p=2SCR553P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR553P5T100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 2A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 360MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 2018 Stücke:
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15+1.44 EUR
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2SCR554P5T100 datasheet?p=2SCR554P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR554P5T100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 1.5A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 300MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
auf Bestellung 3435 Stücke:
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SCT3022ALGC11 datasheet?p=SCT3022AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3022ALGC11
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 93A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Power Dissipation (Max): 339W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
auf Bestellung 1298 Stücke:
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SCT3030ALGC11 datasheet?p=SCT3030AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3030ALGC11
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
auf Bestellung 8797 Stücke:
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SCT3030KLGC11 datasheet?p=SCT3030KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3030KLGC11
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 72A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 339W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V
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SCT3040KLGC11 datasheet?p=SCT3040KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3040KLGC11
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 55A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800
auf Bestellung 459 Stücke:
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SCT3060ALGC11 datasheet?p=SCT3060AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3060ALGC11
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 39A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
auf Bestellung 603 Stücke:
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AnzahlPrivatkunde
1+27.27 EUR
30+14.68 EUR
120+14.43 EUR
510+14.28 EUR
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SCT3080KLGC11 datasheet?p=SCT3080KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3080KLGC11
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
auf Bestellung 390 Stücke:
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SCT3120ALGC11 datasheet?p=SCT3120AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3120ALGC11
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 21A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
auf Bestellung 930 Stücke:
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2+16.02 EUR
30+8.88 EUR
120+8.75 EUR
510+8.13 EUR
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SCT3160KLGC11 datasheet?p=SCT3160KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3160KLGC11
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 17A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800
auf Bestellung 3719 Stücke:
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1+21.72 EUR
30+12.96 EUR
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FDZT40RB6.8 FDZ6.8.pdf
FDZT40RB6.8
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.8V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Produkt ist nicht verfügbar
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SCT3080ALGC11 datasheet?p=SCT3080AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3080ALGC11
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 30A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
auf Bestellung 413 Stücke:
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AnzahlPrivatkunde
1+24 EUR
30+14.48 EUR
120+12.4 EUR
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BD68610EFV-E2 datasheet?p=BD68610EFV&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD68610EFV-E2
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 20HTSSOP
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 20-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
Operating Temperature: -25°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 600mA
Produkt ist nicht verfügbar
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BD68610EFV-E2 datasheet?p=BD68610EFV&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD68610EFV-E2
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 20HTSSOP
Operating Temperature: -25°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 600mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 20-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
auf Bestellung 196 Stücke:
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7+3.2 EUR
10+2.36 EUR
25+2.14 EUR
100+1.9 EUR
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BD57020MWV-E2 uqfn040v5050_1-e.pdf
BD57020MWV-E2
Hersteller: Rohm Semiconductor
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Supply: 5V
Applications: Wireless Power Transmitter
Supplier Device Package: UQFN040V5050
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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BD57015GWL-E2 BD57015GWL.pdf
BD57015GWL-E2
Hersteller: Rohm Semiconductor
Description: IC WIRELESS PWR REC UCSP50L4C
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 0V ~ 17.4V
Applications: Wireless Power Receiver
Current - Supply: 44mA, 27mA
Supplier Device Package: UCSP50L4C
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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BD57020MWV-E2 uqfn040v5050_1-e.pdf
BD57020MWV-E2
Hersteller: Rohm Semiconductor
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Supply: 5V
Applications: Wireless Power Transmitter
Supplier Device Package: UQFN040V5050
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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BD57015GWL-E2 BD57015GWL.pdf
BD57015GWL-E2
Hersteller: Rohm Semiconductor
Description: IC WIRELESS PWR REC UCSP50L4C
Part Status: Not For New Designs
Supplier Device Package: UCSP50L4C
Current - Supply: 44mA, 27mA
Applications: Wireless Power Receiver
Voltage - Supply: 0V ~ 17.4V
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 63-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BD71815AGW-E2 datasheet?p=BD71815AGW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD71815AGW-E2
Hersteller: Rohm Semiconductor
Description: IC REG 13OUT BUCK/LDO 55UCSP
Packaging: Tape & Reel (TR)
Package / Case: 55-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V ~ 5.5V
Frequency - Switching: 6MHz
Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8)
Supplier Device Package: UCSP55M4C
Voltage/Current - Output 1: Programmable, 1A
Voltage/Current - Output 2: Programmable, 800mA
Voltage/Current - Output 3: Programmable, 500mA
w/LED Driver: Yes
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 13
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+4.93 EUR
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SCS205KGHRC datasheet?p=SCS205KGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS205KGHRC
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 1200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS206AGHRC datasheet?p=SCS206AGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS206AGHRC
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS208AGHRC datasheet?p=SCS208AGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS208AGHRC
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS220AE2HRC ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L
SCS220AE2HRC
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS220AGHRC datasheet?p=SCS220AGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220AGHRC
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS220KE2HRC ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L
SCS220KE2HRC
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS220KGHRC datasheet?p=SCS220KGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220KGHRC
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 1200V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1060pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS230AE2HRC ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L
SCS230AE2HRC
Hersteller: Rohm Semiconductor
Description: DIODE ARR SIC SCHOT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS240AE2HRC ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L
SCS240AE2HRC
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 15A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BD71815AGW-E2 datasheet?p=BD71815AGW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD71815AGW-E2
Hersteller: Rohm Semiconductor
Description: IC REG 13OUT BUCK/LDO 55UCSP
Packaging: Cut Tape (CT)
Package / Case: 55-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V ~ 5.5V
Frequency - Switching: 6MHz
Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8)
Supplier Device Package: UCSP55M4C
Voltage/Current - Output 1: Programmable, 1A
Voltage/Current - Output 2: Programmable, 800mA
Voltage/Current - Output 3: Programmable, 500mA
w/LED Driver: Yes
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 13
auf Bestellung 8222 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.92 EUR
10+6.78 EUR
25+6.25 EUR
100+5.66 EUR
250+5.39 EUR
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TFZVTR18B TFZV18B
TFZVTR18B
Hersteller: Rohm Semiconductor
Description: ZENER DIODE
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TFZVTR16B TFZV16B
TFZVTR16B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW SOD323HE
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TFZVTR13B TFZV13B
TFZVTR13B
Hersteller: Rohm Semiconductor
Description: ZENER DIODE
Produkt ist nicht verfügbar
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TFZVTR2.0B TFZV2.0B
TFZVTR2.0B
Hersteller: Rohm Semiconductor
Description: ZENER DIODE
Produkt ist nicht verfügbar
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TFZVTR36B datasheet?p=TFZV36B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TFZVTR36B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 36V 500MW SOD323HE
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
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TFZVTR18B TFZV18B
TFZVTR18B
Hersteller: Rohm Semiconductor
Description: ZENER DIODE
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TFZVTR16B TFZV16B
TFZVTR16B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW SOD323HE
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TFZVTR13B TFZV13B
TFZVTR13B
Hersteller: Rohm Semiconductor
Description: ZENER DIODE
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TFZVTR2.0B TFZV2.0B
TFZVTR2.0B
Hersteller: Rohm Semiconductor
Description: ZENER DIODE
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TFZVTR36B datasheet?p=TFZV36B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TFZVTR36B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 36V 500MW SOD323HE
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
auf Bestellung 2980 Stücke:
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31+0.69 EUR
44+0.49 EUR
100+0.25 EUR
500+0.2 EUR
1000+0.14 EUR
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BD8374HFP-MTR datasheet?p=BD8374HFP-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD8374HFP-MTR
Hersteller: Rohm Semiconductor
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2188 Stücke:
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4+6.33 EUR
10+4.76 EUR
25+4.37 EUR
100+3.94 EUR
250+3.74 EUR
500+3.61 EUR
1000+3.51 EUR
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BU90R104-E2 datasheet?p=BU90R104&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU90R104-E2
Hersteller: Rohm Semiconductor
Description: IC RX/DESERIALIZER LVDS 64TQFP
Part Status: Active
Supplier Device Package: 64-TQFP (10x10)
Number of Inputs: 5
Input Type: LVDS
Data Rate: 3.92Gbps
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Deserializer
Number of Outputs: 35
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
auf Bestellung 1770 Stücke:
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2+12.82 EUR
10+9.89 EUR
25+9.16 EUR
100+8.35 EUR
250+7.97 EUR
500+7.74 EUR
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BU9796AMUV-E2 datasheet?p=BU9796AMUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU9796AMUV-E2
Hersteller: Rohm Semiconductor
Description: IC DRVR 48 SEGMENT VQFN024V4040
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Display Type: LCD
Mounting Type: Surface Mount
Interface: 2-Wire Serial
Configuration: 48 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: VQFN024V4040
Part Status: Active
Current - Supply: 12.5 µA
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8+2.7 EUR
11+1.98 EUR
25+1.8 EUR
100+1.59 EUR
250+1.5 EUR
500+1.44 EUR
1000+1.39 EUR
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RE1J002YNTCL datasheet?p=RE1J002YN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RE1J002YNTCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 50V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
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34+0.63 EUR
56+0.38 EUR
100+0.24 EUR
500+0.18 EUR
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SML-522MU8WT86 datasheet?p=SML-522MU8W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-522MU8WT86
Hersteller: Rohm Semiconductor
Description: LED GREEN/RED DIFFUSED 1315 SMD
Lens Size: 1.30mm x 1.10mm
Lens Style: Rectangle with Flat Top
Part Status: Active
Lens Transparency: Diffused
Supplier Device Package: 1315 (0605)
Wavelength - Dominant: 572nm Green, 620nm Red
Height (Max): 0.70mm
Current - Test: 20mA Green, 20mA Red
Lens Color: White
Voltage - Forward (Vf) (Typ): 2.2V Green, 2.2V Red
Configuration: Independent
Millicandela Rating: 40mcd Green, 63mcd Red
Mounting Type: Surface Mount
Size / Dimension: 1.50mm L x 1.30mm W
Color: Green, Red
Package / Case: 0605 (1513 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 11207 Stücke:
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16+1.38 EUR
26+0.81 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.39 EUR
2000+0.36 EUR
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SML-H12M8TT86 datasheet?p=SML-H12M8T&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-H12M8TT86
Hersteller: Rohm Semiconductor
Description: LED GREEN CLEAR 0805 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 25mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 572nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
auf Bestellung 35822 Stücke:
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26+0.82 EUR
38+0.56 EUR
100+0.4 EUR
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