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BU33TA2WHFV-TR BU33TA2WHFV-TR Rohm Semiconductor datasheet?p=BU33TA2WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 200MA HVSOF5
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 65dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 95 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-665
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-HVSOF
Number of Regulators: 1
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BU33TA2WHFV-TR BU33TA2WHFV-TR Rohm Semiconductor datasheet?p=BU33TA2WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 200MA HVSOF5
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 65dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 95 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-665
Packaging: Cut Tape (CT)
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-HVSOF
Number of Regulators: 1
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BU33UC3WG-TR BU33UC3WG-TR Rohm Semiconductor BUxxUC3WG.pdf Description: IC REG LINEAR 3.3V 300MA 5SSOP
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.22V @ 300mA
PSRR: 70dB (1kHz)
Part Status: Not For New Designs
Control Features: On/Off
Voltage - Output (Min/Fixed): 3.3V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 90 µA
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BU33UC3WG-TR BU33UC3WG-TR Rohm Semiconductor BUxxUC3WG.pdf Description: IC REG LINEAR 3.3V 300MA 5SSOP
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.22V @ 300mA
PSRR: 70dB (1kHz)
Part Status: Not For New Designs
Control Features: On/Off
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
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BU33SA4WGWL-E2 BU33SA4WGWL-E2 Rohm Semiconductor datasheet?p=BU33SA4WGWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LIN 3.3V 200MA 4UCSP50L1
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.15V @ 100mA
PSRR: 70dB ~ 45dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: UCSP50L1
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, CSPBGA
Packaging: Tape & Reel (TR)
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BU33SA4WGWL-E2 BU33SA4WGWL-E2 Rohm Semiconductor datasheet?p=BU33SA4WGWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LIN 3.3V 200MA 4UCSP50L1
Voltage Dropout (Max): 0.15V @ 100mA
PSRR: 70dB ~ 45dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: UCSP50L1
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Packaging: Cut Tape (CT)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, CSPBGA
Protection Features: Over Current, Over Temperature
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BU33JA2DG-CTR BU33JA2DG-CTR Rohm Semiconductor Description: IC REG LINEAR 3.3V 100MA 5SSOP
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.155V @ 100mA
PSRR: 68dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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BU33JA2DG-CTR BU33JA2DG-CTR Rohm Semiconductor Description: IC REG LINEAR 3.3V 100MA 5SSOP
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.155V @ 100mA
PSRR: 68dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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BU33JA2VG-CGTR BU33JA2VG-CGTR Rohm Semiconductor datasheet?p=BU33JA2VG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 200MA 5-SSOP
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.155V @ 100mA
PSRR: 68dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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BU33JA2VG-CGTR BU33JA2VG-CGTR Rohm Semiconductor datasheet?p=BU33JA2VG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 200MA 5-SSOP
Grade: Automotive
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.155V @ 100mA
PSRR: 68dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 200mA
Mounting Type: Surface Mount
Qualification: AEC-Q100
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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SFR03EZPJ101 SFR03EZPJ101 Rohm Semiconductor sfr-e.pdf Description: RES 100 OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 100 Ohms
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SFR03EZPJ101 SFR03EZPJ101 Rohm Semiconductor sfr-e.pdf Description: RES 100 OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 100 Ohms
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R6009RND3TL1 R6009RND3TL1 Rohm Semiconductor r6009rnd3tl1-e.pdf Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
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R6009RND3TL1 R6009RND3TL1 Rohm Semiconductor r6009rnd3tl1-e.pdf Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
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UT6J3TCR UT6J3TCR Rohm Semiconductor ut6j3tcr-e.pdf Description: MOSFET 2P-CH 20V 3A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
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RF4P060BGTCR RF4P060BGTCR Rohm Semiconductor rf4p060bgtcr-e.pdf Description: NCH 100V 6A, HUML2020L8, POWER M
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
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RF4P060BGTCR RF4P060BGTCR Rohm Semiconductor rf4p060bgtcr-e.pdf Description: NCH 100V 6A, HUML2020L8, POWER M
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
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RF4P025ATTCR RF4P025ATTCR Rohm Semiconductor datasheet?p=RF4P025AT&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -100V -2.5A POWER MOSFET
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
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RF4P025ATTCR RF4P025ATTCR Rohm Semiconductor datasheet?p=RF4P025AT&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -100V -2.5A POWER MOSFET
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
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BA2901YF-MGE2 BA2901YF-MGE2 Rohm Semiconductor datasheet?p=BA2901YF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BA2901YF-MGE2 BA2901YF-MGE2 Rohm Semiconductor datasheet?p=BA2901YF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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100+1.82 EUR
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BH8100FV-E2 Rohm Semiconductor Description: CUSTOM; FOR MARSHALL & STYRKER O
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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KTR10EZPF5362 KTR10EZPF5362 Rohm Semiconductor ktr-e.pdf Description: RES SMD 53.6K OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 53.6 kOhms
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112+0.19 EUR
191+0.11 EUR
1000+0.074 EUR
2500+0.065 EUR
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DTC143EE3TL DTC143EE3TL Rohm Semiconductor datasheet?p=DTC143EE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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DTC143EE3TL DTC143EE3TL Rohm Semiconductor datasheet?p=DTC143EE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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BD65494MUV-E2 BD65494MUV-E2 Rohm Semiconductor datasheet?p=BD65494MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFN
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: VQFN016V3030
Voltage - Load: 2V ~ 9V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.5V ~ 3.6V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD65494MUV-E2 BD65494MUV-E2 Rohm Semiconductor datasheet?p=BD65494MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFN
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: VQFN016V3030
Voltage - Load: 2V ~ 9V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.5V ~ 3.6V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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100+3.24 EUR
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BD2801MUV-E2 BD2801MUV-E2 Rohm Semiconductor datasheet?p=BD2801MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 3CH BUILT-IN CHARGE PUMP LINEAR
Part Status: Active
Supplier Device Package: VQFN016V3030
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): No
Current - Output / Channel: 100mA
Applications: General Purpose
Operating Temperature: 0°C ~ 70°C
Type: DC DC Controller
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 20V
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Voltage - Supply (Max): 3.465V
Voltage - Supply (Min): 3.135V
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BD2801MUV-E2 BD2801MUV-E2 Rohm Semiconductor datasheet?p=BD2801MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 3CH BUILT-IN CHARGE PUMP LINEAR
Part Status: Active
Supplier Device Package: VQFN016V3030
Topology: Switched Capacitor (Charge Pump)
Applications: General Purpose
Operating Temperature: 0°C ~ 70°C
Type: DC DC Controller
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 20V
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Internal Switch(s): No
Current - Output / Channel: 100mA
Voltage - Supply (Max): 3.465V
Voltage - Supply (Min): 3.135V
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250+1.82 EUR
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LTR100JZPF4300 LTR100JZPF4300 Rohm Semiconductor ltr-e.pdf Description: RES 430 OHM 1% 2W 1225
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 1225
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 2512 (6432 Metric), 1225
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 2W
Packaging: Tape & Reel (TR)
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LTR100JZPF4300 LTR100JZPF4300 Rohm Semiconductor ltr-e.pdf Description: RES 430 OHM 1% 2W 1225
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 2512 (6432 Metric), 1225
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 2W
Packaging: Cut Tape (CT)
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 1225
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50+0.77 EUR
100+0.63 EUR
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SFR03EZPF4300 SFR03EZPF4300 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Tape & Reel (TR)
Resistance: 430 Ohms
Part Status: Active
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SFR03EZPF4300 SFR03EZPF4300 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
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1000+0.044 EUR
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ESR18EZPF4300 ESR18EZPF4300 Rohm Semiconductor esr-e.pdf Description: RES SMD 430 OHM 1% 1/2W 1206
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESR18EZPF4300 ESR18EZPF4300 Rohm Semiconductor esr-e.pdf Description: RES SMD 430 OHM 1% 1/2W 1206
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 430 Ohms
Part Status: Active
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SDR10EZPF4300 SDR10EZPF4300 Rohm Semiconductor Description: HIGH ANTI-SURGE THICK FILM CHIP
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Resistance: 430 Ohms
Produkt ist nicht verfügbar
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SDR10EZPF4300 SDR10EZPF4300 Rohm Semiconductor Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
Produkt ist nicht verfügbar
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SIR-563ST3F Rohm Semiconductor datasheet?p=SIR-563ST3F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: INFRARED LIGHT EMITTING DIODES T
Packaging: Bulk
Package / Case: Radial
Wavelength: 940nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.34V
Viewing Angle: 30°
Current - DC Forward (If) (Max): 100mA
Radiant Intensity (Ie) Min @ If: 8.2mW/sr @ 50mA
Part Status: Active
Produkt ist nicht verfügbar
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BH28MA3WHFV-TR BH28MA3WHFV-TR Rohm Semiconductor datasheet?p=BH28MA3WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 2.8V 300MA 6-HVSOF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-HVSOF
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.09V @ 100mA
Protection Features: Over Current, Over Temperature
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BH28SA3WGUT-E2 Rohm Semiconductor Description: IC REG LIN 2.8V 150MA VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: VCSP60N1
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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R6035KNZC17 R6035KNZC17 Rohm Semiconductor datasheet?p=R6035KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 35A TO3PF
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
auf Bestellung 277 Stücke:
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R6030KNZC17 R6030KNZC17 Rohm Semiconductor datasheet?p=R6030KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO3PF
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
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R6030JNZC17 R6030JNZC17 Rohm Semiconductor datasheet?p=R6030JNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
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R6077VNZC17 R6077VNZC17 Rohm Semiconductor datasheet?p=R6077VNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 29A TO-3PF, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
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R6515KNZC17 R6515KNZC17 Rohm Semiconductor datasheet?p=R6515KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 15A TO3
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 430µA
Power Dissipation (Max): 60W (Tc)
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R6530KNZC17 R6530KNZC17 Rohm Semiconductor datasheet?p=R6530KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 30A TO3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 960µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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3+7.47 EUR
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120+3.13 EUR
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R6535ENZC17 R6535ENZC17 Rohm Semiconductor datasheet?p=R6535ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 35A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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30+9.32 EUR
120+7.87 EUR
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R6530ENZC17 R6530ENZC17 Rohm Semiconductor datasheet?p=R6530ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 30A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 960µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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R6524KNZC17 R6524KNZC17 Rohm Semiconductor datasheet?p=R6524KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 24A TO3
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 750µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
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SCT4036KEC11 SCT4036KEC11 Rohm Semiconductor datasheet?p=SCT4036KE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 36M, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
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SCT4026DEHRC11 SCT4026DEHRC11 Rohm Semiconductor datasheet?p=SCT4026DEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 750V, 56A, 3-PIN THD, TRENCH-STR
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Power Dissipation (Max): 176W
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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SCT4036KEHRC11 SCT4036KEHRC11 Rohm Semiconductor datasheet?p=SCT4036KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
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SCT4026DEC11 SCT4026DEC11 Rohm Semiconductor datasheet?p=SCT4026DE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 750V, 26M, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
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SCT4062KEHRC11 SCT4062KEHRC11 Rohm Semiconductor datasheet?p=SCT4062KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 26A, 3-PIN THD, TRENCH-ST
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Power Dissipation (Max): 115W
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Qualification: AEC-Q101
Grade: Automotive
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2SAR552P5T100 2SAR552P5T100 Rohm Semiconductor datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 330MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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2SAR552P5T100 2SAR552P5T100 Rohm Semiconductor datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 330MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SAR375P5T100R 2SAR375P5T100R Rohm Semiconductor 2sar375p5t100q-e.pdf Description: TRANS PNP 120V 1.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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2SAR375P5T100R 2SAR375P5T100R Rohm Semiconductor 2sar375p5t100q-e.pdf Description: TRANS PNP 120V 1.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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DTA123JE3HZGTL DTA123JE3HZGTL Rohm Semiconductor datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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DTA123JE3HZGTL DTA123JE3HZGTL Rohm Semiconductor datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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BU33TA2WHFV-TR datasheet?p=BU33TA2WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33TA2WHFV-TR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA HVSOF5
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 65dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 95 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-665
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-HVSOF
Number of Regulators: 1
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BU33TA2WHFV-TR datasheet?p=BU33TA2WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33TA2WHFV-TR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA HVSOF5
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 65dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 95 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-665
Packaging: Cut Tape (CT)
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-HVSOF
Number of Regulators: 1
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BU33UC3WG-TR BUxxUC3WG.pdf
BU33UC3WG-TR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 300MA 5SSOP
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.22V @ 300mA
PSRR: 70dB (1kHz)
Part Status: Not For New Designs
Control Features: On/Off
Voltage - Output (Min/Fixed): 3.3V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 90 µA
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BU33UC3WG-TR BUxxUC3WG.pdf
BU33UC3WG-TR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 300MA 5SSOP
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.22V @ 300mA
PSRR: 70dB (1kHz)
Part Status: Not For New Designs
Control Features: On/Off
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
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BU33SA4WGWL-E2 datasheet?p=BU33SA4WGWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33SA4WGWL-E2
Hersteller: Rohm Semiconductor
Description: IC REG LIN 3.3V 200MA 4UCSP50L1
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.15V @ 100mA
PSRR: 70dB ~ 45dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: UCSP50L1
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, CSPBGA
Packaging: Tape & Reel (TR)
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BU33SA4WGWL-E2 datasheet?p=BU33SA4WGWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33SA4WGWL-E2
Hersteller: Rohm Semiconductor
Description: IC REG LIN 3.3V 200MA 4UCSP50L1
Voltage Dropout (Max): 0.15V @ 100mA
PSRR: 70dB ~ 45dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: UCSP50L1
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Packaging: Cut Tape (CT)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, CSPBGA
Protection Features: Over Current, Over Temperature
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BU33JA2DG-CTR
BU33JA2DG-CTR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 100MA 5SSOP
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.155V @ 100mA
PSRR: 68dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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BU33JA2DG-CTR
BU33JA2DG-CTR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 100MA 5SSOP
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.155V @ 100mA
PSRR: 68dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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BU33JA2VG-CGTR datasheet?p=BU33JA2VG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33JA2VG-CGTR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA 5-SSOP
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.155V @ 100mA
PSRR: 68dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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BU33JA2VG-CGTR datasheet?p=BU33JA2VG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33JA2VG-CGTR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA 5-SSOP
Grade: Automotive
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.155V @ 100mA
PSRR: 68dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 200mA
Mounting Type: Surface Mount
Qualification: AEC-Q100
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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SFR03EZPJ101 sfr-e.pdf
SFR03EZPJ101
Hersteller: Rohm Semiconductor
Description: RES 100 OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 100 Ohms
Produkt ist nicht verfügbar
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SFR03EZPJ101 sfr-e.pdf
SFR03EZPJ101
Hersteller: Rohm Semiconductor
Description: RES 100 OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 100 Ohms
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265+0.08 EUR
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R6009RND3TL1 r6009rnd3tl1-e.pdf
R6009RND3TL1
Hersteller: Rohm Semiconductor
Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
Produkt ist nicht verfügbar
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R6009RND3TL1 r6009rnd3tl1-e.pdf
R6009RND3TL1
Hersteller: Rohm Semiconductor
Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
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UT6J3TCR ut6j3tcr-e.pdf
UT6J3TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 3A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
auf Bestellung 2835 Stücke:
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10+2.26 EUR
15+1.4 EUR
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RF4P060BGTCR rf4p060bgtcr-e.pdf
RF4P060BGTCR
Hersteller: Rohm Semiconductor
Description: NCH 100V 6A, HUML2020L8, POWER M
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RF4P060BGTCR rf4p060bgtcr-e.pdf
RF4P060BGTCR
Hersteller: Rohm Semiconductor
Description: NCH 100V 6A, HUML2020L8, POWER M
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
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10+2.23 EUR
16+1.39 EUR
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500+0.7 EUR
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RF4P025ATTCR datasheet?p=RF4P025AT&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RF4P025ATTCR
Hersteller: Rohm Semiconductor
Description: PCH -100V -2.5A POWER MOSFET
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RF4P025ATTCR datasheet?p=RF4P025AT&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RF4P025ATTCR
Hersteller: Rohm Semiconductor
Description: PCH -100V -2.5A POWER MOSFET
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
auf Bestellung 1854 Stücke:
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10+2.18 EUR
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BA2901YF-MGE2 datasheet?p=BA2901YF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA2901YF-MGE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BA2901YF-MGE2 datasheet?p=BA2901YF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA2901YF-MGE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BH8100FV-E2
Hersteller: Rohm Semiconductor
Description: CUSTOM; FOR MARSHALL & STYRKER O
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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KTR10EZPF5362 ktr-e.pdf
KTR10EZPF5362
Hersteller: Rohm Semiconductor
Description: RES SMD 53.6K OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 53.6 kOhms
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DTC143EE3TL datasheet?p=DTC143EE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTC143EE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTC143EE3TL datasheet?p=DTC143EE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTC143EE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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BD65494MUV-E2 datasheet?p=BD65494MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD65494MUV-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFN
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: VQFN016V3030
Voltage - Load: 2V ~ 9V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.5V ~ 3.6V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD65494MUV-E2 datasheet?p=BD65494MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD65494MUV-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFN
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: VQFN016V3030
Voltage - Load: 2V ~ 9V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.5V ~ 3.6V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2999 Stücke:
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BD2801MUV-E2 datasheet?p=BD2801MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2801MUV-E2
Hersteller: Rohm Semiconductor
Description: 3CH BUILT-IN CHARGE PUMP LINEAR
Part Status: Active
Supplier Device Package: VQFN016V3030
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): No
Current - Output / Channel: 100mA
Applications: General Purpose
Operating Temperature: 0°C ~ 70°C
Type: DC DC Controller
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 20V
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Voltage - Supply (Max): 3.465V
Voltage - Supply (Min): 3.135V
Produkt ist nicht verfügbar
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BD2801MUV-E2 datasheet?p=BD2801MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2801MUV-E2
Hersteller: Rohm Semiconductor
Description: 3CH BUILT-IN CHARGE PUMP LINEAR
Part Status: Active
Supplier Device Package: VQFN016V3030
Topology: Switched Capacitor (Charge Pump)
Applications: General Purpose
Operating Temperature: 0°C ~ 70°C
Type: DC DC Controller
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 20V
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Internal Switch(s): No
Current - Output / Channel: 100mA
Voltage - Supply (Max): 3.465V
Voltage - Supply (Min): 3.135V
auf Bestellung 1620 Stücke:
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LTR100JZPF4300 ltr-e.pdf
LTR100JZPF4300
Hersteller: Rohm Semiconductor
Description: RES 430 OHM 1% 2W 1225
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 1225
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 2512 (6432 Metric), 1225
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 2W
Packaging: Tape & Reel (TR)
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4000+0.35 EUR
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LTR100JZPF4300 ltr-e.pdf
LTR100JZPF4300
Hersteller: Rohm Semiconductor
Description: RES 430 OHM 1% 2W 1225
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 2512 (6432 Metric), 1225
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 2W
Packaging: Cut Tape (CT)
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 1225
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15+1.46 EUR
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1000+0.36 EUR
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SFR03EZPF4300 sfr-e.pdf
SFR03EZPF4300
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Tape & Reel (TR)
Resistance: 430 Ohms
Part Status: Active
auf Bestellung 5000 Stücke:
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5000+0.035 EUR
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SFR03EZPF4300 sfr-e.pdf
SFR03EZPF4300
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
auf Bestellung 9995 Stücke:
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AnzahlPrivatkunde
72+0.3 EUR
81+0.26 EUR
210+0.1 EUR
1000+0.044 EUR
2500+0.038 EUR
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ESR18EZPF4300 esr-e.pdf
ESR18EZPF4300
Hersteller: Rohm Semiconductor
Description: RES SMD 430 OHM 1% 1/2W 1206
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESR18EZPF4300 esr-e.pdf
ESR18EZPF4300
Hersteller: Rohm Semiconductor
Description: RES SMD 430 OHM 1% 1/2W 1206
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 430 Ohms
Part Status: Active
Produkt ist nicht verfügbar
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SDR10EZPF4300
SDR10EZPF4300
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Resistance: 430 Ohms
Produkt ist nicht verfügbar
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SDR10EZPF4300
SDR10EZPF4300
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
Produkt ist nicht verfügbar
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SIR-563ST3F datasheet?p=SIR-563ST3F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: INFRARED LIGHT EMITTING DIODES T
Packaging: Bulk
Package / Case: Radial
Wavelength: 940nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.34V
Viewing Angle: 30°
Current - DC Forward (If) (Max): 100mA
Radiant Intensity (Ie) Min @ If: 8.2mW/sr @ 50mA
Part Status: Active
Produkt ist nicht verfügbar
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BH28MA3WHFV-TR datasheet?p=BH28MA3WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BH28MA3WHFV-TR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 2.8V 300MA 6-HVSOF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-HVSOF
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.09V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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BH28SA3WGUT-E2
Hersteller: Rohm Semiconductor
Description: IC REG LIN 2.8V 150MA VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: VCSP60N1
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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R6035KNZC17 datasheet?p=R6035KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6035KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 35A TO3PF
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
auf Bestellung 277 Stücke:
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R6030KNZC17 datasheet?p=R6030KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
auf Bestellung 300 Stücke:
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2+17.23 EUR
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R6030JNZC17 datasheet?p=R6030JNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030JNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
Produkt ist nicht verfügbar
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R6077VNZC17 datasheet?p=R6077VNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6077VNZC17
Hersteller: Rohm Semiconductor
Description: 600V 29A TO-3PF, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
auf Bestellung 407 Stücke:
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2+17.03 EUR
30+10.04 EUR
120+8.51 EUR
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R6515KNZC17 datasheet?p=R6515KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6515KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A TO3
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 430µA
Power Dissipation (Max): 60W (Tc)
auf Bestellung 292 Stücke:
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4+6.24 EUR
30+4.44 EUR
120+4.33 EUR
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R6530KNZC17 datasheet?p=R6530KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6530KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 30A TO3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 960µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
auf Bestellung 250 Stücke:
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3+7.47 EUR
30+6.13 EUR
120+3.13 EUR
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R6535ENZC17 datasheet?p=R6535ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6535ENZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 35A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 290 Stücke:
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2+15.92 EUR
30+9.32 EUR
120+7.87 EUR
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R6530ENZC17 datasheet?p=R6530ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6530ENZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 30A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 960µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
auf Bestellung 300 Stücke:
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3+7.47 EUR
30+6.13 EUR
120+5.99 EUR
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R6524KNZC17 datasheet?p=R6524KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6524KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 24A TO3
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 750µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 300 Stücke:
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2+13.34 EUR
10+12 EUR
100+9.83 EUR
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SCT4036KEC11 datasheet?p=SCT4036KE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4036KEC11
Hersteller: Rohm Semiconductor
Description: 1200V, 36M, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
auf Bestellung 4652 Stücke:
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1+38.69 EUR
30+24.28 EUR
120+21.12 EUR
510+20.34 EUR
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SCT4026DEHRC11 datasheet?p=SCT4026DEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4026DEHRC11
Hersteller: Rohm Semiconductor
Description: 750V, 56A, 3-PIN THD, TRENCH-STR
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Power Dissipation (Max): 176W
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 320 Stücke:
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1+36.79 EUR
30+30.24 EUR
120+26.48 EUR
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SCT4036KEHRC11 datasheet?p=SCT4036KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4036KEHRC11
Hersteller: Rohm Semiconductor
Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 269 Stücke:
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1+39.6 EUR
10+28.37 EUR
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SCT4026DEC11 datasheet?p=SCT4026DE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4026DEC11
Hersteller: Rohm Semiconductor
Description: 750V, 26M, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
auf Bestellung 4843 Stücke:
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AnzahlPrivatkunde
1+38.2 EUR
30+23.95 EUR
120+20.82 EUR
510+20.02 EUR
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SCT4062KEHRC11 datasheet?p=SCT4062KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4062KEHRC11
Hersteller: Rohm Semiconductor
Description: 1200V, 26A, 3-PIN THD, TRENCH-ST
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Power Dissipation (Max): 115W
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 153 Stücke:
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AnzahlPrivatkunde
1+23.2 EUR
10+20.38 EUR
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2SAR552P5T100 datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR552P5T100
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 330MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SAR552P5T100 datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR552P5T100
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 330MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 1534 Stücke:
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AnzahlPrivatkunde
20+1.05 EUR
24+0.88 EUR
100+0.62 EUR
500+0.48 EUR
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2SAR375P5T100R 2sar375p5t100q-e.pdf
2SAR375P5T100R
Hersteller: Rohm Semiconductor
Description: TRANS PNP 120V 1.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
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AnzahlPrivatkunde
1000+0.6 EUR
2000+0.55 EUR
Mindestbestellmenge: 1000 Stücke
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2SAR375P5T100R 2sar375p5t100q-e.pdf
2SAR375P5T100R
Hersteller: Rohm Semiconductor
Description: TRANS PNP 120V 1.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 3543 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.12 EUR
16+1.31 EUR
100+0.86 EUR
500+0.67 EUR
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DTA123JE3HZGTL datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123JE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DTA123JE3HZGTL datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123JE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
39+0.55 EUR
100+0.27 EUR
500+0.23 EUR
1000+0.17 EUR
Mindestbestellmenge: 28 Stücke
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