Hersteller: ifm efector, inc.
Description: INFRARED TEMPERATURE SENSOR; M30
Part Status: Active
Sensing Temperature - Local: 50°C ~ 500°C
Sensor Type: Digital, Local
Voltage - Supply: 10V ~ 34V
Operating Temperature: 0°C ~ 65°C
Mounting Type: Panel Mount
Package / Case: Cylinder, Threaded - M30
Packaging: Box

Hersteller: STMicroelectronics
Description: TRANS SJT N-CH 1200V 91A HIP247
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: HiP247™
Vgs(th) (Max) @ Id: 4.9V @ 1mA
Power Dissipation (Max): 547W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; 446W; TO247
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO247
On-state resistance: 37mΩ
Mounting: THT
Power dissipation: 446W
Polarisation: unipolar
Technology: MDmesh™ DM2
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 600V

Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package

Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 package

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Pulsed drain current: 220A
Power dissipation: 390W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Version: ESD

Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO247-4 package

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 43A; 450W
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO247
On-state resistance: 30mΩ
Mounting: THT
Power dissipation: 450W
Polarisation: unipolar
Version: ESD
Technology: MDmesh™ || Plus
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 650V

Hersteller: ST
Transistor N-Channel MOSFET; 650V; 25V; 40mOhm; 68A; 450W; -55°C ~ 150°C; STW70N60M2 TSTW70N60M2
Anzahl je Verpackung: 2 Stücke

Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.031Ohm typ. 68A MDmesh M2

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V

Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 36 mOhm typ., 68 A MDmesh DM6 Power MOSFET in a TO247-4 package

TFT, Graphics color 7.0", 800x600, 171.4x109.90, интерфейс RGB, з ємнісним тач-падом

TFT, Graphics color 7.0", 800x480, 166.6x109.40, интерфейс LVDS, з резистивним тач-падом

Hersteller: STM

Hersteller: VISATON
Category: Speakers
Description: Loudspeaker; general purpose; 40W; 8Ω; 64x64x29mm; 800÷20000Hz
Type of sound transducer: loudspeaker
Kind of loudspeaker: general purpose
Power: 40W
Maximum power: 80W
Impedance: 8Ω
Body dimensions: 64x64x29mm
Sound frequency: 0.8...20kHz
Panel cutout diameter: 64mm
Sound level: 90dB
Resonant frequency: 1.5kHz
Colour: black
Diameter: 64mm
Height: 29mm

Hersteller: Visaton
Speakers & Transducers Cone tweeter sealed rear 800 20000Hz 8ohm 1500Hz

Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Part Status: Active
Adhesive: Tacky - Both Sides
Thermal Conductivity: 11W/m-K
Outline: 160.00mm x 160.00mm
Usage: Thermally Conductive
Type: Gap Filler Pad, Sheet
Thickness: 0.0200" (0.508mm)
Shape: Square
Material: Silicone
Color: Gray, Green
Packaging: Tray

Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Part Status: Active
Adhesive: Tacky - Both Sides
Thermal Conductivity: 11W/m-K
Outline: 160.00mm x 160.00mm
Usage: Thermally Conductive
Type: Gap Filler Pad, Sheet
Material: Silicone
Color: Gray, Green
Packaging: Tray
Thickness: 0.0390" (0.991mm)
Shape: Square

Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Part Status: Active
Adhesive: Tacky - Both Sides
Thermal Conductivity: 11W/m-K
Outline: 160.00mm x 160.00mm
Usage: Thermally Conductive
Type: Gap Filler Pad, Sheet
Thickness: 0.0591" (1.500mm)
Shape: Square
Material: Silicone
Color: Gray, Green
Packaging: Tray

Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0790" (2.000mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active

Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Thermal Conductivity: 11W/m-K
Outline: 160.00mm x 160.00mm
Usage: Thermally Conductive
Type: Gap Filler Pad, Sheet
Thickness: 0.0980" (2.489mm)
Shape: Square
Material: Silicone
Color: Gray, Green
Packaging: Tray
Part Status: Active
Adhesive: Tacky - Both Sides

Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Part Status: Active
Outline: 160.00mm x 160.00mm
Usage: Thermally Conductive
Type: Gap Filler Pad, Sheet
Thickness: 0.118" (3.00mm)
Shape: Square
Material: Silicone
Color: Gray, Green
Packaging: Tray
Adhesive: Tacky - Both Sides
Thermal Conductivity: 11W/m-K

Hersteller: KEMET
Tantalum Capacitors - Polymer 4V 100uF 20% 3528-21 -55 /125C ESR=70mOhms AEC-Q200

Hersteller: KEMET
Tantalum Capacitors - Polymer 10V 47uF 20% 3528-21 -55 /125C ESR=70mOhms AEC-Q200

Gehäuse, Halter, Montage- und Installationselemente > Lautsprecher, Mikrofone, Summer

Hersteller: Visaton GmbH & Co. KG
Description: SPEAKER 8OHM 40W TOP PORT 90DB
Packaging: Bulk
Shape: Round, Square Frame
Type: Tweeter
Technology: Magnetic
Termination: Quick Connect
Frequency - Self Resonant: 1.5kHz
Port Location: Top
Height - Seated (Max): 1.169" (29.70mm)
Part Status: Active
Impedance: 8 Ohms
Power - Max: 60 W
Power - Rated: 40 W
Frequency Range: 800 Hz ~ 20 kHz
Efficiency - dBA: 90.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)

Hersteller: Excelta Corporation
Description: TWEEZER KITSET -- ANTI-MAG. SS -
Packaging: Retail Package
Part Status: Active
Tip Shape: Assorted
Material: Stainless Steel
Features: Anti-Magnetic

Hersteller: IFM ELECTRONIC
Category: Temp. Sensors - Resistance Thermometers
Description: Converter: temperature
Type of converter: temperature

Hersteller: IFM ELECTRONIC
Category: Temp. Sensors - Resistance Thermometers
Description: Converter: temperature
Type of converter: temperature

Hersteller: ifm efector, inc.
Description: INFRARED TEMPERATURE SENSOR; M30
Part Status: Active
Sensing Temperature - Local: 250°C ~ 1250°C
Sensor Type: Digital, Local
Voltage - Supply: 10V ~ 34V
Operating Temperature: 0°C ~ 65°C
Mounting Type: Panel Mount
Package / Case: Cylinder, Threaded - M30
Packaging: Box

Hersteller: IFM ELECTRONIC
Category: Temp. Sensors - Resistance Thermometers
Description: Converter: temperature
Type of converter: temperature

Hersteller: ifm efector, inc.
Description: INFRARED TEMPERATURE SENSOR; M30
Part Status: Active
Sensing Temperature - Local: 350°C ~ 1350°C
Sensor Type: Digital, Local
Voltage - Supply: 10V ~ 34V
Operating Temperature: 0°C ~ 65°C
Mounting Type: Panel Mount
Package / Case: Cylinder, Threaded - M30
Packaging: Box

Hersteller: VISATON GmbH & Co. KG
8 Ohm, 40W, Frequency response 800–20000 Hz, Pressure=90dB (1 W/1m), 64mm*29mm Аудіоперетворювачі

Hersteller: Honeywell Sensing and Productivity Solutions
Description: SWITCH TOGGLE DPDT 5A 125V
Voltage Rating - AC: 125 V
Part Status: Active
Panel Cutout Dimensions: Circular - 12.40mm Dia
Ingress Protection: Environment Sealed
Actuator Type: Locking Lever
Actuator Length: 20.83mm
Bushing Thread: 15/32-32
Illumination: Non-Illuminated
Termination Style: Solder Lug
Operating Temperature: -65°C ~ 71°C
Switch Function: On-Off-Mom
Circuit: DPDT
Mounting Type: Panel Mount
Current Rating (Amps): 5A (AC)
Packaging: Bulk

Hersteller: Honeywell
Toggle Switches SEALED OI TOGGLES

Hersteller: Microtips Technology
TFT Displays & Accessories 7.0" TFT WVGA WHITE LED 500 Nits

Hersteller: Microtips Technology
TFT Displays & Accessories 800 x 480 TFT 7.0" diag

Hersteller: Microtips Technology
TFT Displays & Accessories

Hersteller: Microtips Technology
TFT Displays & Accessories

Hersteller: Microtips Technology
TFT Displays & Accessories 7.0" TFT WVGA WHITE LED 500 Nits

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 91A; Idm: 274A; 547W
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Kind of package: tube
Case: HIP247™
On-state resistance: 30mΩ
Mounting: THT
Pulsed drain current: 274A
Power dissipation: 547W
Gate charge: 150nC
Polarisation: unipolar
Technology: SiC
Drain current: 91A
Kind of channel: enhancement
Drain-source voltage: 1.2kV

Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 66A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO247
On-state resistance: 36mΩ
Mounting: THT
Pulsed drain current: 220A
Power dissipation: 390W
Gate charge: 99nC
Polarisation: unipolar
Drain current: 39A
Kind of channel: enhancement
Drain-source voltage: 600V

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 62A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Supplier Device Package: TO-247-3
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 62A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 43A; Idm: 272A
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO247-4
On-state resistance: 40mΩ
Mounting: THT
Pulsed drain current: 272A
Power dissipation: 450W
Gate charge: 118nC
Polarisation: unipolar
Technology: MDmesh™ M2
Features of semiconductor devices: Kelvin terminal
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 600V

Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in a TO247-4 packag

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO247
On-state resistance: 40mΩ
Mounting: THT
Pulsed drain current: 260A
Power dissipation: 450W
Gate charge: 125nC
Polarisation: unipolar
Technology: MDmesh™ DM6
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 650V

Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V

Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 36 mOhm typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 package

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43A; Idm: 260A; 450W; TO247-4
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO247-4
On-state resistance: 36mΩ
Mounting: THT
Pulsed drain current: 260A
Power dissipation: 450W
Gate charge: 125nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 650V

Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 68A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V
Qualification: AEC-Q101

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 252A; 446W; TO247
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO247
On-state resistance: 39mΩ
Mounting: THT
Pulsed drain current: 252A
Power dissipation: 446W
Gate charge: 117nC
Polarisation: unipolar
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 650V

Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 31.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 100 V

Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.039 Ohm typ., 63 A MDmesh M2 Power MOSFET in a TO-247 package

Hersteller: STM
MOSFET N-CH 600V 62A TO247-4 Транзистори

Hersteller: STM
MOSFET N-CH 600V 68A TO247 Транзистори

Hersteller: KEMET
Tantalum Capacitors - Polymer 10V 47uF 1311 20% ESR=70mOhms