Suchergebnisse für "2SB8" : > 60

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2SB857
Produktcode: 39793 		2sb857-datasheet.pdf Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-220C
fT: 15 MHz
U, V: 50 V
U, V: 70 V
I, А: 4 А
auf Bestellung 20 Stück:
Lieferzeit 21-28 Tag (e)
2SB861 2SB861
Produktcode: 72319 		datasheet-2sb861.pdf Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-220AB
U, V: 150 V
U, V: 200 V
I, А: 2 А
h21,max: 200
auf Bestellung 1 Stück:
Lieferzeit 21-28 Tag (e)
2SB882 2SB882
Produktcode: 15197 		Sanyo 2SB882.pdf Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-220
fT: 20 MHz
U, V: 60
U, V: 70
I, А: 10
h21,max: 5000
Bem.: Дарлінгтон
auf Bestellung 2 Stück:
Lieferzeit 21-28 Tag (e)
erwartet 50 Stück:
50 Stück - erwartet 16.06.2024
1+0.45 EUR
10+ 0.36 EUR
2SB891F 2SB891F
Produktcode: 1367 		Rohm 2SB891F.pdf Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-126FP
fT: 100 MHz
U, V: 32
U, V: 32
I, А: 2
h21,max: 390
verfügbar: 708 Stück
1+0.37 EUR
10+ 0.33 EUR
100+ 0.27 EUR
2SB892 2SB892
Produktcode: 25435 		SAN 2SB892, 2SD1207.pdf Transistoren > Bipolar-Transistoren PNP
Gehäuse: SC-51
U, V: 50
U, V: 60
I, А: 2
h21,max: 560
verfügbar: 405 Stück
1+0.18 EUR
10+ 0.16 EUR
2SB808F-SPA Sanyo 2SB808.pdf?t.download=true&u=ovmfp3 Description: MOSFET N-CH
Packaging: Bulk
Part Status: Active
auf Bestellung 21994 Stücke:
Lieferzeit 10-14 Tag (e)
5323+0.099 EUR
Mindestbestellmenge: 5323
2SB808F-SPA ONSEMI 2SB808.pdf?t.download=true&u=ovmfp3 Description: ONSEMI - 2SB808F-SPA - 2SB808F-SPA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 21994 Stücke:
Lieferzeit 14-21 Tag (e)
2SB808F-SPA-ON onsemi Description: MOSFET N-CH
Packaging: Bulk
Part Status: Active
auf Bestellung 35003 Stücke:
Lieferzeit 10-14 Tag (e)
5323+0.099 EUR
Mindestbestellmenge: 5323
2SB808G-SPA-AC Sanyo 2SB808.pdf?t.download=true&u=ovmfp3 Description: SILICON EPITAXIAL PLANAR
Packaging: Bulk
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
3806+0.13 EUR
Mindestbestellmenge: 3806
2SB815-6-TB-E 2SB815-6-TB-E onsemi en694-d.pdf Description: TRANS PNP 15V 0.7A 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
auf Bestellung 794950 Stücke:
Lieferzeit 10-14 Tag (e)
3139+0.16 EUR
Mindestbestellmenge: 3139
2SB815-7-TB-E 2SB815-7-TB-E onsemi EN694-D.html Description: TRANS PNP 15V 0.7A 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
9000+ 0.14 EUR
Mindestbestellmenge: 3000
2SB815-7-TB-E 2SB815-7-TB-E onsemi EN694-D.html Description: TRANS PNP 15V 0.7A 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
auf Bestellung 74980 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
38+ 0.47 EUR
100+ 0.28 EUR
500+ 0.26 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 29
2SB815-7-TB-E 2SB815-7-TB-E onsemi EN694_D-2310902.pdf Bipolar Transistors - BJT BIP PNP 0.7A 15V
auf Bestellung 47010 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.59 EUR
10+ 0.47 EUR
100+ 0.26 EUR
1000+ 0.18 EUR
3000+ 0.14 EUR
9000+ 0.13 EUR
Mindestbestellmenge: 5
2SB817C 2SB817C onsemi SNYOS09580-1.pdf?t.download=true&u=5oefqw Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-3P-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 2.5 W
auf Bestellung 17513 Stücke:
Lieferzeit 10-14 Tag (e)
126+3.94 EUR
Mindestbestellmenge: 126
2SB817C ONSEMI SNYOS09580-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB817C - 2SB817C, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 17513 Stücke:
Lieferzeit 14-21 Tag (e)
2SB817D 2SB817D Sanyo SNYOS14783-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL SILICON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-3PB
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
auf Bestellung 18604 Stücke:
Lieferzeit 10-14 Tag (e)
180+2.75 EUR
Mindestbestellmenge: 180
2SB817D 2SB817D onsemi SNYOS14783-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-3PB
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
auf Bestellung 1357 Stücke:
Lieferzeit 10-14 Tag (e)
180+2.75 EUR
Mindestbestellmenge: 180
2SB817D ONSEMI SNYOS14783-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB817D - 2SB817D, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1357 Stücke:
Lieferzeit 14-21 Tag (e)
2SB824R 2SB824R onsemi SSCLS00737-1.pdf?t.download=true&u=5oefqw Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.75 W
auf Bestellung 3470 Stücke:
Lieferzeit 10-14 Tag (e)
683+0.73 EUR
Mindestbestellmenge: 683
2SB824R ONSEMI SSCLS00737-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB824R - 2SB824R, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 3470 Stücke:
Lieferzeit 14-21 Tag (e)
2SB824S 2SB824S onsemi SSCLS00737-1.pdf?t.download=true&u=5oefqw Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.75 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
683+0.73 EUR
Mindestbestellmenge: 683
2SB824S 2SB824S ONSEMI SSCLS00737-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB824S - 2SB824S, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
2SB825R 2SB825R onsemi SNYOS08273-1.pdf?t.download=true&u=5oefqw Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 40 W
auf Bestellung 6125 Stücke:
Lieferzeit 10-14 Tag (e)
485+1.02 EUR
Mindestbestellmenge: 485
2SB825R ONSEMI SNYOS08273-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB825R - 2SB825R, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
2SB827R 2SB827R onsemi SNYOS00725-1.pdf?t.download=true&u=5oefqw Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 10MHz
Supplier Device Package: TO-3PB
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 60 W
auf Bestellung 10358 Stücke:
Lieferzeit 10-14 Tag (e)
273+1.81 EUR
Mindestbestellmenge: 273
2SB827R ONSEMI SNYOS00725-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB827R - 2SB827R, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 3794 Stücke:
Lieferzeit 14-21 Tag (e)
2SB852KT146B 2SB852KT146B ROHM Semiconductor ROHM_S_A0003540279_1-2561921.pdf Darlington Transistors DARL PNP 32V 0.3A
auf Bestellung 531 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.75 EUR
10+ 0.64 EUR
100+ 0.48 EUR
500+ 0.37 EUR
1000+ 0.29 EUR
3000+ 0.24 EUR
9000+ 0.22 EUR
Mindestbestellmenge: 4
2SB852KT146B 2SB852KT146B Rohm Semiconductor 2sb852kt146b-e.pdf Description: TRANS PNP DARL 32V 0.3A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400µA, 200mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
auf Bestellung 2645 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
28+ 0.64 EUR
100+ 0.45 EUR
500+ 0.35 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 24
2SB852KT146B 2SB852KT146B Rohm Semiconductor 2sb852kt146b-e.pdf Trans Darlington PNP 32V 0.3A 200mW 3-Pin SMT T/R
auf Bestellung 1692 Stücke:
Lieferzeit 14-21 Tag (e)
423+0.37 EUR
500+ 0.34 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 423
2SB857C-E 2SB857C-E Renesas Electronics Corporation RNCCS03021-1.pdf?t.download=true&u=5oefqw Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 4V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 40 W
auf Bestellung 1074 Stücke:
Lieferzeit 10-14 Tag (e)
163+3.05 EUR
Mindestbestellmenge: 163
2SB858C-E 2SB858C-E Renesas Electronics Corporation RNCCS03021-1.pdf?t.download=true&u=5oefqw Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 4V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
auf Bestellung 1262 Stücke:
Lieferzeit 10-14 Tag (e)
181+2.74 EUR
Mindestbestellmenge: 181
2SB860-E 2SB860-E Renesas Electronics Corporation RNSAS04968-1.pdf?t.download=true&u=5oefqw Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 4V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.8 W
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
286+1.73 EUR
Mindestbestellmenge: 286
2SB861C 2SB861C Renesas Electronics Corporation RNCCS08241-1.pdf?t.download=true&u=5oefqw Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1.8 W
auf Bestellung 2031 Stücke:
Lieferzeit 10-14 Tag (e)
217+2.27 EUR
Mindestbestellmenge: 217
2SB865-AE 2SB865-AE onsemi SNYOD004-41.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
1268+0.4 EUR
Mindestbestellmenge: 1268
2SB865-AE 2SB865-AE ONSEMI SNYOD004-41.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB865-AE - 2SB865-AE, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 26000 Stücke:
Lieferzeit 14-21 Tag (e)
2SB880 2SB880 onsemi SNYOS07591-1.pdf?t.download=true&u=5oefqw Description: PNP DARLINGTON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
auf Bestellung 4699 Stücke:
Lieferzeit 10-14 Tag (e)
544+0.91 EUR
Mindestbestellmenge: 544
2SB880 ONSEMI SNYOS07591-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB880 - 2SB880, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 4699 Stücke:
Lieferzeit 14-21 Tag (e)
2SB883 2SB883 onsemi SNYOS07588-1.pdf?t.download=true&u=5oefqw Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 14mA, 7A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 7A, 2V
Frequency - Transition: 20MHz
Supplier Device Package: TO-3PB
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 70 W
auf Bestellung 8398 Stücke:
Lieferzeit 10-14 Tag (e)
229+2.16 EUR
Mindestbestellmenge: 229
2SB883 ONSEMI SNYOS07588-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB883 - 2SB883, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 8398 Stücke:
Lieferzeit 14-21 Tag (e)
2SB886 2SB886 Sanyo 2SB886.pdf Description: POWER BIPOLAR TRANSISTOR, 8A, 10
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 2646 Stücke:
Lieferzeit 10-14 Tag (e)
268+1.85 EUR
Mindestbestellmenge: 268
2SB886 2SB886 onsemi 2SB886.pdf Description: POWER BIPOLAR TRANSISTOR, 8A, 10
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
268+1.85 EUR
Mindestbestellmenge: 268
2SB886 2SB886 ONSEMI SNYOS07574-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB886 - 2SB886, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2646 Stücke:
Lieferzeit 14-21 Tag (e)
2SB888-AA 2SB888-AA onsemi SNYOD004-41.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Part Status: Active
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V
Frequency - Transition: 170MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 600 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
1902+0.26 EUR
Mindestbestellmenge: 1902
2SB888-AA ONSEMI SNYOD004-41.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB888-AA - 2SB888-AA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
2SB892S onsemi SSCLS00743-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 10141 Stücke:
Lieferzeit 10-14 Tag (e)
2049+0.25 EUR
Mindestbestellmenge: 2049
2SB892S ONSEMI SSCLS00743-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB892S - 2SB892S, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 10141 Stücke:
Lieferzeit 14-21 Tag (e)
2SB892S-AE 2SB892S-AE onsemi SSCLS00743-1.pdf?t.download=true&u=5oefqw Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
2049+0.25 EUR
Mindestbestellmenge: 2049
2SB892S-AE 2SB892S-AE ONSEMI SSCLS00743-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - 2SB892S-AE - 2SB892S-AE, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
2SB892T onsemi SSCLS00743-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 9455 Stücke:
Lieferzeit 10-14 Tag (e)
1567+0.31 EUR
Mindestbestellmenge: 1567
2SB892T ONSEMI SSCLS00743-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB892T - 2SB892T, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 9455 Stücke:
Lieferzeit 14-21 Tag (e)
2SB892T-AE onsemi Description: TRANS
Packaging: Bulk
Part Status: Obsolete
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
2219+0.23 EUR
Mindestbestellmenge: 2219
2SB892T-AE 2SB892T-AE ONSEMI SSCLS00743-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - 2SB892T-AE - 2SB892T-AE, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
2SB800 KEXIN 09+
auf Bestellung 200018 Stücke:
Lieferzeit 21-28 Tag (e)
2SB800 NEC
auf Bestellung 1700 Stücke:
Lieferzeit 21-28 Tag (e)
2SB801
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
2SB802
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
2SB803
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
2SB804 NEC SOT-89
auf Bestellung 930 Stücke:
Lieferzeit 21-28 Tag (e)
2SB804 KESENES 09+
auf Bestellung 143018 Stücke:
Lieferzeit 21-28 Tag (e)
2SB804-AV KESENES 09+
auf Bestellung 92998 Stücke:
Lieferzeit 21-28 Tag (e)
2SB857
Produktcode: 39793		 2sb857-datasheet.pdf
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-220C
fT: 15 MHz
U, V: 50 V
U, V: 70 V
I, А: 4 А
auf Bestellung 20 Stück:
Lieferzeit 21-28 Tag (e)
2SB861
Produktcode: 72319		 datasheet-2sb861.pdf
2SB861
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-220AB
U, V: 150 V
U, V: 200 V
I, А: 2 А
h21,max: 200
auf Bestellung 1 Stück:
Lieferzeit 21-28 Tag (e)
2SB882
Produktcode: 15197		 2SB882.pdf
2SB882
Hersteller: Sanyo
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-220
fT: 20 MHz
U, V: 60
U, V: 70
I, А: 10
h21,max: 5000
Bem.: Дарлінгтон
auf Bestellung 2 Stück:
Lieferzeit 21-28 Tag (e)
erwartet 50 Stück:
50 Stück - erwartet 16.06.2024
Anzahl Preis ohne MwSt
1+0.45 EUR
10+ 0.36 EUR
2SB891F
Produktcode: 1367		 2SB891F.pdf
2SB891F
Hersteller: Rohm
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-126FP
fT: 100 MHz
U, V: 32
U, V: 32
I, А: 2
h21,max: 390
verfügbar: 708 Stück
Anzahl Preis ohne MwSt
1+0.37 EUR
10+ 0.33 EUR
100+ 0.27 EUR
2SB892
Produktcode: 25435		 2SB892, 2SD1207.pdf
2SB892
Hersteller: SAN
Transistoren > Bipolar-Transistoren PNP
Gehäuse: SC-51
U, V: 50
U, V: 60
I, А: 2
h21,max: 560
verfügbar: 405 Stück
Anzahl Preis ohne MwSt
1+0.18 EUR
10+ 0.16 EUR
2SB808F-SPA 2SB808.pdf?t.download=true&u=ovmfp3
Hersteller: Sanyo
Description: MOSFET N-CH
Packaging: Bulk
Part Status: Active
auf Bestellung 21994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5323+0.099 EUR
Mindestbestellmenge: 5323
2SB808F-SPA 2SB808.pdf?t.download=true&u=ovmfp3
Hersteller: ONSEMI
Description: ONSEMI - 2SB808F-SPA - 2SB808F-SPA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 21994 Stücke:
Lieferzeit 14-21 Tag (e)
2SB808F-SPA-ON
Hersteller: onsemi
Description: MOSFET N-CH
Packaging: Bulk
Part Status: Active
auf Bestellung 35003 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5323+0.099 EUR
Mindestbestellmenge: 5323
2SB808G-SPA-AC 2SB808.pdf?t.download=true&u=ovmfp3
Hersteller: Sanyo
Description: SILICON EPITAXIAL PLANAR
Packaging: Bulk
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3806+0.13 EUR
Mindestbestellmenge: 3806
2SB815-6-TB-E en694-d.pdf
2SB815-6-TB-E
Hersteller: onsemi
Description: TRANS PNP 15V 0.7A 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
auf Bestellung 794950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3139+0.16 EUR
Mindestbestellmenge: 3139
2SB815-7-TB-E EN694-D.html
2SB815-7-TB-E
Hersteller: onsemi
Description: TRANS PNP 15V 0.7A 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
9000+ 0.14 EUR
Mindestbestellmenge: 3000
2SB815-7-TB-E EN694-D.html
2SB815-7-TB-E
Hersteller: onsemi
Description: TRANS PNP 15V 0.7A 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
auf Bestellung 74980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
38+ 0.47 EUR
100+ 0.28 EUR
500+ 0.26 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 29
2SB815-7-TB-E EN694_D-2310902.pdf
2SB815-7-TB-E
Hersteller: onsemi
Bipolar Transistors - BJT BIP PNP 0.7A 15V
auf Bestellung 47010 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.59 EUR
10+ 0.47 EUR
100+ 0.26 EUR
1000+ 0.18 EUR
3000+ 0.14 EUR
9000+ 0.13 EUR
Mindestbestellmenge: 5
2SB817C SNYOS09580-1.pdf?t.download=true&u=5oefqw
2SB817C
Hersteller: onsemi
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-3P-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 2.5 W
auf Bestellung 17513 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
126+3.94 EUR
Mindestbestellmenge: 126
2SB817C SNYOS09580-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB817C - 2SB817C, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 17513 Stücke:
Lieferzeit 14-21 Tag (e)
2SB817D SNYOS14783-1.pdf?t.download=true&u=5oefqw
2SB817D
Hersteller: Sanyo
Description: P-CHANNEL SILICON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-3PB
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
auf Bestellung 18604 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
180+2.75 EUR
Mindestbestellmenge: 180
2SB817D SNYOS14783-1.pdf?t.download=true&u=5oefqw
2SB817D
Hersteller: onsemi
Description: P-CHANNEL SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-3PB
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
auf Bestellung 1357 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
180+2.75 EUR
Mindestbestellmenge: 180
2SB817D SNYOS14783-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB817D - 2SB817D, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1357 Stücke:
Lieferzeit 14-21 Tag (e)
2SB824R SSCLS00737-1.pdf?t.download=true&u=5oefqw
2SB824R
Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.75 W
auf Bestellung 3470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
683+0.73 EUR
Mindestbestellmenge: 683
2SB824R SSCLS00737-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB824R - 2SB824R, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 3470 Stücke:
Lieferzeit 14-21 Tag (e)
2SB824S SSCLS00737-1.pdf?t.download=true&u=5oefqw
2SB824S
Hersteller: onsemi
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.75 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
683+0.73 EUR
Mindestbestellmenge: 683
2SB824S SSCLS00737-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
2SB824S
Hersteller: ONSEMI
Description: ONSEMI - 2SB824S - 2SB824S, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
2SB825R SNYOS08273-1.pdf?t.download=true&u=5oefqw
2SB825R
Hersteller: onsemi
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 40 W
auf Bestellung 6125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
485+1.02 EUR
Mindestbestellmenge: 485
2SB825R SNYOS08273-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB825R - 2SB825R, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
2SB827R SNYOS00725-1.pdf?t.download=true&u=5oefqw
2SB827R
Hersteller: onsemi
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 10MHz
Supplier Device Package: TO-3PB
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 60 W
auf Bestellung 10358 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
273+1.81 EUR
Mindestbestellmenge: 273
2SB827R SNYOS00725-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB827R - 2SB827R, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 3794 Stücke:
Lieferzeit 14-21 Tag (e)
2SB852KT146B ROHM_S_A0003540279_1-2561921.pdf
2SB852KT146B
Hersteller: ROHM Semiconductor
Darlington Transistors DARL PNP 32V 0.3A
auf Bestellung 531 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.75 EUR
10+ 0.64 EUR
100+ 0.48 EUR
500+ 0.37 EUR
1000+ 0.29 EUR
3000+ 0.24 EUR
9000+ 0.22 EUR
Mindestbestellmenge: 4
2SB852KT146B 2sb852kt146b-e.pdf
2SB852KT146B
Hersteller: Rohm Semiconductor
Description: TRANS PNP DARL 32V 0.3A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400µA, 200mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
auf Bestellung 2645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
28+ 0.64 EUR
100+ 0.45 EUR
500+ 0.35 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 24
2SB852KT146B 2sb852kt146b-e.pdf
2SB852KT146B
Hersteller: Rohm Semiconductor
Trans Darlington PNP 32V 0.3A 200mW 3-Pin SMT T/R
auf Bestellung 1692 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
423+0.37 EUR
500+ 0.34 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 423
2SB857C-E RNCCS03021-1.pdf?t.download=true&u=5oefqw
2SB857C-E
Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 4V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 40 W
auf Bestellung 1074 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
163+3.05 EUR
Mindestbestellmenge: 163
2SB858C-E RNCCS03021-1.pdf?t.download=true&u=5oefqw
2SB858C-E
Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 4V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
auf Bestellung 1262 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
181+2.74 EUR
Mindestbestellmenge: 181
2SB860-E RNSAS04968-1.pdf?t.download=true&u=5oefqw
2SB860-E
Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 4V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.8 W
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
286+1.73 EUR
Mindestbestellmenge: 286
2SB861C RNCCS08241-1.pdf?t.download=true&u=5oefqw
2SB861C
Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1.8 W
auf Bestellung 2031 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
217+2.27 EUR
Mindestbestellmenge: 217
2SB865-AE SNYOD004-41.pdf?t.download=true&u=5oefqw
2SB865-AE
Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1268+0.4 EUR
Mindestbestellmenge: 1268
2SB865-AE SNYOD004-41.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
2SB865-AE
Hersteller: ONSEMI
Description: ONSEMI - 2SB865-AE - 2SB865-AE, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 26000 Stücke:
Lieferzeit 14-21 Tag (e)
2SB880 SNYOS07591-1.pdf?t.download=true&u=5oefqw
2SB880
Hersteller: onsemi
Description: PNP DARLINGTON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
auf Bestellung 4699 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
544+0.91 EUR
Mindestbestellmenge: 544
2SB880 SNYOS07591-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB880 - 2SB880, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 4699 Stücke:
Lieferzeit 14-21 Tag (e)
2SB883 SNYOS07588-1.pdf?t.download=true&u=5oefqw
2SB883
Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 14mA, 7A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 7A, 2V
Frequency - Transition: 20MHz
Supplier Device Package: TO-3PB
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 70 W
auf Bestellung 8398 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
229+2.16 EUR
Mindestbestellmenge: 229
2SB883 SNYOS07588-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB883 - 2SB883, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 8398 Stücke:
Lieferzeit 14-21 Tag (e)
2SB886 2SB886.pdf
2SB886
Hersteller: Sanyo
Description: POWER BIPOLAR TRANSISTOR, 8A, 10
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 2646 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
268+1.85 EUR
Mindestbestellmenge: 268
2SB886 2SB886.pdf
2SB886
Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR, 8A, 10
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
268+1.85 EUR
Mindestbestellmenge: 268
2SB886 SNYOS07574-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
2SB886
Hersteller: ONSEMI
Description: ONSEMI - 2SB886 - 2SB886, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2646 Stücke:
Lieferzeit 14-21 Tag (e)
2SB888-AA SNYOD004-41.pdf?t.download=true&u=5oefqw
2SB888-AA
Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Part Status: Active
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V
Frequency - Transition: 170MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 600 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1902+0.26 EUR
Mindestbestellmenge: 1902
2SB888-AA SNYOD004-41.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB888-AA - 2SB888-AA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
2SB892S SSCLS00743-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 10141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2049+0.25 EUR
Mindestbestellmenge: 2049
2SB892S SSCLS00743-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB892S - 2SB892S, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 10141 Stücke:
Lieferzeit 14-21 Tag (e)
2SB892S-AE SSCLS00743-1.pdf?t.download=true&u=5oefqw
2SB892S-AE
Hersteller: onsemi
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2049+0.25 EUR
Mindestbestellmenge: 2049
2SB892S-AE SSCLS00743-1.pdf?t.download=true&u=5oefqw
2SB892S-AE
Hersteller: ONSEMI
Description: ONSEMI - 2SB892S-AE - 2SB892S-AE, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
2SB892T SSCLS00743-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 9455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1567+0.31 EUR
Mindestbestellmenge: 1567
2SB892T SSCLS00743-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB892T - 2SB892T, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 9455 Stücke:
Lieferzeit 14-21 Tag (e)
2SB892T-AE
Hersteller: onsemi
Description: TRANS
Packaging: Bulk
Part Status: Obsolete
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2219+0.23 EUR
Mindestbestellmenge: 2219
2SB892T-AE SSCLS00743-1.pdf?t.download=true&u=5oefqw
2SB892T-AE
Hersteller: ONSEMI
Description: ONSEMI - 2SB892T-AE - 2SB892T-AE, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
2SB800
Hersteller: KEXIN
09+
auf Bestellung 200018 Stücke:
Lieferzeit 21-28 Tag (e)
2SB800
Hersteller: NEC
auf Bestellung 1700 Stücke:
Lieferzeit 21-28 Tag (e)
2SB801
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
2SB802
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
2SB803
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
2SB804
Hersteller: NEC
SOT-89
auf Bestellung 930 Stücke:
Lieferzeit 21-28 Tag (e)
2SB804
Hersteller: KESENES
09+
auf Bestellung 143018 Stücke:
Lieferzeit 21-28 Tag (e)
2SB804-AV
Hersteller: KESENES
09+
auf Bestellung 92998 Stücke:
Lieferzeit 21-28 Tag (e)
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