Suchergebnisse für "20N60" : > 60
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Mindestbestellmenge: 1000
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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HGTG20N60A4 Produktcode: 32885
zu Favoriten hinzufügen
Lieblingsprodukt
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FAIR |
![]() Gehäuse: TO-247 Vces: 600 Vce: 1,8 Ic 25: 70 Ic 100: 40 Pd 25: 290 td(on)/td(off) 100-150 Grad: 15/73 |
auf Bestellung 2 Stück: Lieferzeit 21-28 Tag (e) |
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HGTG20N60A4D Produktcode: 206983
zu Favoriten hinzufügen
Lieblingsprodukt
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Alfa@Omega |
![]() Gehäuse: PG-TO247-3 Vces: 600 V Vce: 1,8 V Ic 25: 70 A Ic 100: 40 A Pd 25: 290 W td(on)/td(off) 100-150 Grad: 15/73 |
auf Bestellung 29 Stück: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HGTG20N60A4D Produktcode: 29312
zu Favoriten hinzufügen
Lieblingsprodukt
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FAIR |
![]() Gehäuse: TO-247 Vces: 600 Vce: 1,8 Ic 25: 70 Ic 100: 40 Pd 25: 290 td(on)/td(off) 100-150 Grad: 15/73 |
verfügbar: 7 Stück
5 Stück - stock Köln
2 Stück - lieferbar in 3-4 Wochen |
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HGTG20N60B3D Produktcode: 28558
zu Favoriten hinzufügen
Lieblingsprodukt
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Fairchild |
![]() Gehäuse: TO-247 Vces: 600 V Vce: 1,8 V Ic 25: 40 A Ic 100: 20 A Pd 25: 165 W td(on)/td(off) 100-150 Grad: 25/220 |
auf Bestellung 25 Stück: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HGTP20N60A4 Produktcode: 61820
zu Favoriten hinzufügen
Lieblingsprodukt
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Fairchild |
![]() ![]() Gehäuse: TO-220 Vces: 600 V Vce: 1,8 V Ic 25: 70 A Ic 100: 40 A Pd 25: 290 W td(on)/td(off) 100-150 Grad: 15/73 |
auf Bestellung 102 Stück: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKP20N60T Produktcode: 84958
zu Favoriten hinzufügen
Lieblingsprodukt
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![]() Gehäuse: TO-220 Vces: 600 V Vce: 1,5 V Ic 25: 40 A Ic 100: 20 A Pd 25: 166 W td(on)/td(off) 100-150 Grad: 18/199 |
auf Bestellung 44 Stück: Lieferzeit 21-28 Tag (e) |
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SPP20N60C3 Produktcode: 25463
zu Favoriten hinzufügen
Lieblingsprodukt
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Infineon |
![]() Gehäuse: TO-220 Uds,V: 650 Idd,A: 20.07.2015 Rds(on), Ohm: 3 Ciss, pF/Qg, nC: 01.11.2400 JHGF: THT |
auf Bestellung 87 Stück: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SPP20N60S5 Produktcode: 32013
zu Favoriten hinzufügen
Lieblingsprodukt
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Infineon |
![]() ![]() Uds,V: 600 V Idd,A: 20 A Rds(on), Ohm: 0,19 Ohm Ciss, pF/Qg, nC: 3000/79 JHGF: THT |
auf Bestellung 16 Stück: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
20N60A4D |
auf Bestellung 150 Stücke: Lieferzeit 21-28 Tag (e) |
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20N60C3 | FAIRCHILD | TO-3P |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
20N60C3 | Infineon | 09+ |
auf Bestellung 178 Stücke: Lieferzeit 21-28 Tag (e) |
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20N60C3 | INFINION |
auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) |
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20N60S5 | SIEMENS | 2004 TO220 |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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20N60S5 | HARRIS | 09+ |
auf Bestellung 6018 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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AIKB20N60CTATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/199ns Switching Energy: 310µJ (on), 460µJ (off) Test Condition: 600V, 20A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 156 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKB20N60CTATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/199ns Switching Energy: 310µJ (on), 460µJ (off) Test Condition: 600V, 20A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 156 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3999 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKB20N60CTATMA1 | Infineon Technologies |
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auf Bestellung 925 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKP20N60CTAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 156W Case: TO220-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 60A Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC |
auf Bestellung 353 Stücke: Lieferzeit 14-21 Tag (e) |
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AIKP20N60CTAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 156W Case: TO220-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 60A Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 353 Stücke: Lieferzeit 7-14 Tag (e) |
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AIKP20N60CTAKSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A Supplier Device Package: PG-TO220-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/199ns Switching Energy: 310µJ (on), 460µJ (off) Test Condition: 400V, 20A, 12Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 156 W |
auf Bestellung 23130 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKQ120N60CTXKSA1 | Infineon Technologies |
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auf Bestellung 480 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKQ120N60CTXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A Supplier Device Package: PG-TO247-3-46 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/310ns Switching Energy: 4.1mJ (on), 2.8mJ (off) Test Condition: 400V, 120A, 3Ohm, 15V Gate Charge: 772 nC Grade: Automotive Part Status: Not For New Designs Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 480 A Power - Max: 833 W Qualification: AEC-Q101 |
auf Bestellung 152 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKW20N60CTXKSA1 | Infineon Technologies |
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auf Bestellung 242 Stücke: Lieferzeit 10-14 Tag (e) |
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AOTF20N60 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Case: TO220F Gate-source voltage: ±30V On-state resistance: 370mΩ Mounting: THT Kind of channel: enhancement Gate charge: 61nC |
auf Bestellung 774 Stücke: Lieferzeit 14-21 Tag (e) |
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AOTF20N60 | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 5 Stücke |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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AOTF20N60 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Case: TO220F Gate-source voltage: ±30V On-state resistance: 370mΩ Mounting: THT Kind of channel: enhancement Gate charge: 61nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 774 Stücke: Lieferzeit 7-14 Tag (e) |
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BIDW20N60T | Bourns |
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auf Bestellung 7031 Stücke: Lieferzeit 10-14 Tag (e) |
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FCA20N60 | onsemi / Fairchild |
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auf Bestellung 372 Stücke: Lieferzeit 10-14 Tag (e) |
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FCA20N60-F109 | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
auf Bestellung 890 Stücke: Lieferzeit 10-14 Tag (e) |
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FCA20N60-F109 | onsemi / Fairchild |
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auf Bestellung 387 Stücke: Lieferzeit 10-14 Tag (e) |
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FCA20N60F | onsemi / Fairchild |
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auf Bestellung 433 Stücke: Lieferzeit 10-14 Tag (e) |
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FCA20N60F | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
auf Bestellung 856 Stücke: Lieferzeit 10-14 Tag (e) |
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FCB20N60FTM | onsemi / Fairchild |
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auf Bestellung 10639 Stücke: Lieferzeit 10-14 Tag (e) |
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FCB20N60FTM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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FCB20N60FTM | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
auf Bestellung 2058 Stücke: Lieferzeit 10-14 Tag (e) |
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FCB20N60TM | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
auf Bestellung 265 Stücke: Lieferzeit 10-14 Tag (e) |
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FCB20N60TM | onsemi / Fairchild |
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auf Bestellung 11287 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD620N60ZF | onsemi / Fairchild |
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auf Bestellung 4930 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD620N60ZF | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V |
auf Bestellung 7361 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD620N60ZF | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP20N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP20N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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FCP20N60 | onsemi / Fairchild |
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auf Bestellung 577 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP20N60 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
auf Bestellung 6197 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF20N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 39W; TO220FP Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 60A Gate charge: 98nC |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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FCPF20N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 39W; TO220FP Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 60A Gate charge: 98nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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FCPF20N60 | onsemi / Fairchild |
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auf Bestellung 346 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF20N60 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
auf Bestellung 1685 Stücke: Lieferzeit 10-14 Tag (e) |
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FGB20N60SFD-F085 | onsemi / Fairchild |
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auf Bestellung 1598 Stücke: Lieferzeit 10-14 Tag (e) |
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FGB20N60SFD-F085 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 111 ns Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 20A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Field Stop Td (on/off) @ 25°C: 10ns/90ns Switching Energy: 310µJ (on), 130µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 63 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 208 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 727 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH20N60SFDTU | ON-Semicoductor |
![]() Anzahl je Verpackung: 2 Stücke |
auf Bestellung 32 Stücke: Lieferzeit 7-14 Tag (e) |
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HGT1S20N60C3R | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-262 (I2PAK) Gate Charge: 116 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 164 W |
auf Bestellung 580 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTG20N60A4 | Fairchaild | IGBT транзистор - SMPS IGBT - TO-247; 600 V; 40A |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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HGTG20N60C3R | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-247 Gate Charge: 116 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 164 W |
auf Bestellung 4575 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTP20N60A4 | Fairchild |
![]() ![]() Anzahl je Verpackung: 5 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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IGB20N60H3 | Infineon Technologies |
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auf Bestellung 1652 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB20N60H3ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16ns/194ns Switching Energy: 690µJ Test Condition: 400V, 20A, 14.6Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 170 W |
auf Bestellung 912 Stücke: Lieferzeit 10-14 Tag (e) |
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IGP20N60H3 | Infineon Technologies |
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auf Bestellung 439 Stücke: Lieferzeit 10-14 Tag (e) |
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IGP20N60H3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3 Type of transistor: IGBT Power dissipation: 170W Case: TO220-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A |
auf Bestellung 403 Stücke: Lieferzeit 14-21 Tag (e) |
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IGP20N60H3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3 Type of transistor: IGBT Power dissipation: 170W Case: TO220-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 403 Stücke: Lieferzeit 7-14 Tag (e) |
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HGTG20N60A4 Produktcode: 32885
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: FAIR
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 70
Ic 100: 40
Pd 25: 290
td(on)/td(off) 100-150 Grad: 15/73
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 70
Ic 100: 40
Pd 25: 290
td(on)/td(off) 100-150 Grad: 15/73
auf Bestellung 2 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis |
---|---|
1+ | 3.36 EUR |
10+ | 2.80 EUR |
HGTG20N60A4D Produktcode: 206983
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: Alfa@Omega
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: PG-TO247-3
Vces: 600 V
Vce: 1,8 V
Ic 25: 70 A
Ic 100: 40 A
Pd 25: 290 W
td(on)/td(off) 100-150 Grad: 15/73
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: PG-TO247-3
Vces: 600 V
Vce: 1,8 V
Ic 25: 70 A
Ic 100: 40 A
Pd 25: 290 W
td(on)/td(off) 100-150 Grad: 15/73
auf Bestellung 29 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
HGTG20N60A4D Produktcode: 29312
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: FAIR
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 70
Ic 100: 40
Pd 25: 290
td(on)/td(off) 100-150 Grad: 15/73
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 70
Ic 100: 40
Pd 25: 290
td(on)/td(off) 100-150 Grad: 15/73
verfügbar: 7 Stück
5 Stück - stock Köln
2 Stück - lieferbar in 3-4 Wochen
2 Stück - lieferbar in 3-4 Wochen
Anzahl | Preis |
---|---|
1+ | 3.99 EUR |
HGTG20N60B3D Produktcode: 28558
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: Fairchild
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 1,8 V
Ic 25: 40 A
Ic 100: 20 A
Pd 25: 165 W
td(on)/td(off) 100-150 Grad: 25/220
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 1,8 V
Ic 25: 40 A
Ic 100: 20 A
Pd 25: 165 W
td(on)/td(off) 100-150 Grad: 25/220
auf Bestellung 25 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
HGTP20N60A4 Produktcode: 61820
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: Fairchild
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-220
Vces: 600 V
Vce: 1,8 V
Ic 25: 70 A
Ic 100: 40 A
Pd 25: 290 W
td(on)/td(off) 100-150 Grad: 15/73
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-220
Vces: 600 V
Vce: 1,8 V
Ic 25: 70 A
Ic 100: 40 A
Pd 25: 290 W
td(on)/td(off) 100-150 Grad: 15/73
auf Bestellung 102 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IKP20N60T Produktcode: 84958
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-220
Vces: 600 V
Vce: 1,5 V
Ic 25: 40 A
Ic 100: 20 A
Pd 25: 166 W
td(on)/td(off) 100-150 Grad: 18/199
Gehäuse: TO-220
Vces: 600 V
Vce: 1,5 V
Ic 25: 40 A
Ic 100: 20 A
Pd 25: 166 W
td(on)/td(off) 100-150 Grad: 18/199
auf Bestellung 44 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
SPP20N60C3 Produktcode: 25463
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: Infineon
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 650
Idd,A: 20.07.2015
Rds(on), Ohm: 3
Ciss, pF/Qg, nC: 01.11.2400
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 650
Idd,A: 20.07.2015
Rds(on), Ohm: 3
Ciss, pF/Qg, nC: 01.11.2400
JHGF: THT
auf Bestellung 87 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
SPP20N60S5 Produktcode: 32013
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: Infineon
Transistoren > MOSFET N-CH
Uds,V: 600 V
Idd,A: 20 A
Rds(on), Ohm: 0,19 Ohm
Ciss, pF/Qg, nC: 3000/79
JHGF: THT
Transistoren > MOSFET N-CH
Uds,V: 600 V
Idd,A: 20 A
Rds(on), Ohm: 0,19 Ohm
Ciss, pF/Qg, nC: 3000/79
JHGF: THT
auf Bestellung 16 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
20N60C3 |
Hersteller: FAIRCHILD
TO-3P
TO-3P
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
20N60C3 |
Hersteller: Infineon
09+
09+
auf Bestellung 178 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
20N60C3 |
Hersteller: INFINION
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
20N60S5 |
Hersteller: SIEMENS
2004 TO220
2004 TO220
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
20N60S5 |
Hersteller: HARRIS
09+
09+
auf Bestellung 6018 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AIKB20N60CTATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 600V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 600V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 3.11 EUR |
AIKB20N60CTATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 600V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 600V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3999 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.28 EUR |
10+ | 4.74 EUR |
25+ | 4.35 EUR |
100+ | 3.93 EUR |
250+ | 3.73 EUR |
500+ | 3.61 EUR |
AIKB20N60CTATMA1 |
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Hersteller: Infineon Technologies
IGBTs DISCRETES
IGBTs DISCRETES
auf Bestellung 925 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 6.23 EUR |
10+ | 4.72 EUR |
25+ | 4.33 EUR |
100+ | 3.91 EUR |
250+ | 3.71 EUR |
500+ | 3.57 EUR |
1000+ | 3.20 EUR |
AIKP20N60CTAKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
auf Bestellung 353 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.29 EUR |
16+ | 4.68 EUR |
18+ | 4.05 EUR |
19+ | 3.83 EUR |
250+ | 3.69 EUR |
AIKP20N60CTAKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 353 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.29 EUR |
16+ | 4.68 EUR |
18+ | 4.05 EUR |
19+ | 3.83 EUR |
250+ | 3.69 EUR |
AIKP20N60CTAKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
Description: IGBT TRENCH FS 600V 40A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
auf Bestellung 23130 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
160+ | 3.17 EUR |
AIKQ120N60CTXKSA1 |
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Hersteller: Infineon Technologies
IGBTs DISCRETES
IGBTs DISCRETES
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 22.84 EUR |
10+ | 17.12 EUR |
25+ | 15.38 EUR |
100+ | 14.50 EUR |
AIKQ120N60CTXKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/310ns
Switching Energy: 4.1mJ (on), 2.8mJ (off)
Test Condition: 400V, 120A, 3Ohm, 15V
Gate Charge: 772 nC
Grade: Automotive
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 833 W
Qualification: AEC-Q101
Description: IGBT TRENCH FS 600V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/310ns
Switching Energy: 4.1mJ (on), 2.8mJ (off)
Test Condition: 400V, 120A, 3Ohm, 15V
Gate Charge: 772 nC
Grade: Automotive
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 833 W
Qualification: AEC-Q101
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 24.55 EUR |
10+ | 19.40 EUR |
30+ | 17.89 EUR |
120+ | 16.54 EUR |
AIKW20N60CTXKSA1 |
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Hersteller: Infineon Technologies
IGBTs DISCRETES
IGBTs DISCRETES
auf Bestellung 242 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 11.09 EUR |
10+ | 10.07 EUR |
25+ | 9.56 EUR |
100+ | 8.99 EUR |
240+ | 5.67 EUR |
480+ | 5.32 EUR |
AOTF20N60 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 61nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 61nC
auf Bestellung 774 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.97 EUR |
28+ | 2.62 EUR |
32+ | 2.26 EUR |
34+ | 2.14 EUR |
500+ | 2.06 EUR |
AOTF20N60 |
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Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 370mOhm; 20A; 50W; -55°C ~ 150°C; AOTF20N60 TAOTF20n60
Anzahl je Verpackung: 5 Stücke
Transistor N-Channel MOSFET; 600V; 30V; 370mOhm; 20A; 50W; -55°C ~ 150°C; AOTF20N60 TAOTF20n60
Anzahl je Verpackung: 5 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 5.24 EUR |
AOTF20N60 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 61nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 61nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 774 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.97 EUR |
28+ | 2.62 EUR |
32+ | 2.26 EUR |
34+ | 2.14 EUR |
500+ | 2.06 EUR |
BIDW20N60T |
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Hersteller: Bourns
IGBTs IGBT Discrete 600V, 20A in TO-247
IGBTs IGBT Discrete 600V, 20A in TO-247
auf Bestellung 7031 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 6.46 EUR |
10+ | 5.67 EUR |
25+ | 4.17 EUR |
100+ | 3.41 EUR |
250+ | 3.17 EUR |
600+ | 2.85 EUR |
FCA20N60 |
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Hersteller: onsemi / Fairchild
MOSFETs HIGH POWER
MOSFETs HIGH POWER
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 10.01 EUR |
10+ | 7.99 EUR |
25+ | 6.12 EUR |
100+ | 5.21 EUR |
FCA20N60-F109 |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 20A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
auf Bestellung 890 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 11.81 EUR |
30+ | 6.80 EUR |
120+ | 5.70 EUR |
510+ | 5.05 EUR |
FCA20N60-F109 |
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Hersteller: onsemi / Fairchild
MOSFETs 600V N-CH MOSFET
MOSFETs 600V N-CH MOSFET
auf Bestellung 387 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 10.47 EUR |
30+ | 6.18 EUR |
120+ | 5.65 EUR |
510+ | 5.21 EUR |
FCA20N60F |
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Hersteller: onsemi / Fairchild
MOSFETs 600V N-CH FRFET
MOSFETs 600V N-CH FRFET
auf Bestellung 433 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 11.14 EUR |
10+ | 11.09 EUR |
30+ | 5.86 EUR |
120+ | 5.40 EUR |
FCA20N60F |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 20A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
auf Bestellung 856 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.13 EUR |
30+ | 7.00 EUR |
120+ | 5.87 EUR |
510+ | 5.23 EUR |
FCB20N60FTM |
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Hersteller: onsemi / Fairchild
MOSFETs 600V NCH FRFET
MOSFETs 600V NCH FRFET
auf Bestellung 10639 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 9.42 EUR |
10+ | 6.58 EUR |
25+ | 6.56 EUR |
100+ | 5.03 EUR |
800+ | 4.58 EUR |
FCB20N60FTM |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
800+ | 4.97 EUR |
FCB20N60FTM |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
auf Bestellung 2058 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.72 EUR |
10+ | 7.21 EUR |
100+ | 5.22 EUR |
FCB20N60TM |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.45 EUR |
10+ | 7.02 EUR |
100+ | 5.08 EUR |
FCB20N60TM |
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Hersteller: onsemi / Fairchild
MOSFETs HIGH POWER
MOSFETs HIGH POWER
auf Bestellung 11287 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 10.12 EUR |
10+ | 6.86 EUR |
25+ | 6.85 EUR |
100+ | 5.03 EUR |
250+ | 5.02 EUR |
500+ | 5.00 EUR |
800+ | 4.86 EUR |
FCD620N60ZF |
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Hersteller: onsemi / Fairchild
MOSFETs N-Channel SuperFET II FRFET MOSFET 600V, 7.3A, 620mO
MOSFETs N-Channel SuperFET II FRFET MOSFET 600V, 7.3A, 620mO
auf Bestellung 4930 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 3.52 EUR |
10+ | 2.41 EUR |
100+ | 1.76 EUR |
500+ | 1.50 EUR |
FCD620N60ZF |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 7.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V
Description: MOSFET N-CH 600V 7.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V
auf Bestellung 7361 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.38 EUR |
10+ | 2.83 EUR |
100+ | 1.94 EUR |
500+ | 1.56 EUR |
1000+ | 1.44 EUR |
FCD620N60ZF |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 7.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V
Description: MOSFET N-CH 600V 7.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.48 EUR |
FCP20N60 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.75 EUR |
11+ | 6.66 EUR |
16+ | 4.65 EUR |
17+ | 4.39 EUR |
FCP20N60 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.75 EUR |
11+ | 6.66 EUR |
16+ | 4.65 EUR |
17+ | 4.39 EUR |
FCP20N60 |
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Hersteller: onsemi / Fairchild
MOSFETs 600V N-Channel SuperFET
MOSFETs 600V N-Channel SuperFET
auf Bestellung 577 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 8.69 EUR |
10+ | 8.11 EUR |
50+ | 5.21 EUR |
100+ | 4.80 EUR |
250+ | 4.79 EUR |
500+ | 4.26 EUR |
FCP20N60 |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
auf Bestellung 6197 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.16 EUR |
50+ | 5.39 EUR |
100+ | 4.93 EUR |
500+ | 4.13 EUR |
FCPF20N60 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 98nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 98nC
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.65 EUR |
12+ | 5.98 EUR |
14+ | 5.11 EUR |
FCPF20N60 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 98nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 98nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.65 EUR |
12+ | 5.98 EUR |
14+ | 5.11 EUR |
FCPF20N60 |
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Hersteller: onsemi / Fairchild
MOSFETs 600V N-Channel SuperFET
MOSFETs 600V N-Channel SuperFET
auf Bestellung 346 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 8.98 EUR |
25+ | 5.21 EUR |
100+ | 4.77 EUR |
500+ | 4.28 EUR |
FCPF20N60 |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
auf Bestellung 1685 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.19 EUR |
50+ | 5.40 EUR |
100+ | 4.94 EUR |
500+ | 4.14 EUR |
FGB20N60SFD-F085 |
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Hersteller: onsemi / Fairchild
IGBTs 600V 20A FSP IGBT
IGBTs 600V 20A FSP IGBT
auf Bestellung 1598 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 7.06 EUR |
10+ | 4.98 EUR |
25+ | 4.96 EUR |
100+ | 3.68 EUR |
250+ | 3.66 EUR |
500+ | 3.64 EUR |
800+ | 3.10 EUR |
FGB20N60SFD-F085 |
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Hersteller: onsemi
Description: IGBT FIELD STOP 600V 40A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 111 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 10ns/90ns
Switching Energy: 310µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 208 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT FIELD STOP 600V 40A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 111 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 10ns/90ns
Switching Energy: 310µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 208 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 727 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.25 EUR |
10+ | 5.47 EUR |
100+ | 3.89 EUR |
FGH20N60SFDTU |
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Hersteller: ON-Semicoductor
Single IGBT Transistors 600V 20A Field Stop ; FGH20N60SFDTU TO-247AB-3 TFGH20N60sfdtu
Anzahl je Verpackung: 2 Stücke
Single IGBT Transistors 600V 20A Field Stop ; FGH20N60SFDTU TO-247AB-3 TFGH20N60sfdtu
Anzahl je Verpackung: 2 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 10.44 EUR |
HGT1S20N60C3R |
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Hersteller: Harris Corporation
Description: IGBT 600V 40A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 164 W
Description: IGBT 600V 40A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 164 W
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
155+ | 3.27 EUR |
HGTG20N60A4 |
Hersteller: Fairchaild
IGBT транзистор - SMPS IGBT - TO-247; 600 V; 40A
IGBT транзистор - SMPS IGBT - TO-247; 600 V; 40A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 17.09 EUR |
10+ | 15.38 EUR |
100+ | 13.84 EUR |
HGTG20N60C3R |
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Hersteller: Harris Corporation
Description: IGBT 600V 40A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 164 W
Description: IGBT 600V 40A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 164 W
auf Bestellung 4575 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
123+ | 4.13 EUR |
HGTP20N60A4 | ![]() |
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Hersteller: Fairchild
Transistor IGBT ; 600V; 20V; 70A; 280A; 290W; 4,5V~7,0V; 210nC; -55°C~150°C; HGTP20N60A4 THGTP20n60a4
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 600V; 20V; 70A; 280A; 290W; 4,5V~7,0V; 210nC; -55°C~150°C; HGTP20N60A4 THGTP20n60a4
Anzahl je Verpackung: 5 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 7.84 EUR |
IGB20N60H3 |
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Hersteller: Infineon Technologies
IGBTs 600v Hi-Speed SW IGBT
IGBTs 600v Hi-Speed SW IGBT
auf Bestellung 1652 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 3.78 EUR |
10+ | 2.38 EUR |
100+ | 1.80 EUR |
500+ | 1.44 EUR |
1000+ | 1.38 EUR |
2000+ | 1.23 EUR |
IGB20N60H3ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
auf Bestellung 912 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.19 EUR |
10+ | 2.70 EUR |
100+ | 1.84 EUR |
500+ | 1.48 EUR |
IGP20N60H3 |
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Hersteller: Infineon Technologies
IGBTs IGBT 600V
IGBTs IGBT 600V
auf Bestellung 439 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 4.49 EUR |
10+ | 2.06 EUR |
100+ | 1.88 EUR |
500+ | 1.48 EUR |
1000+ | 1.40 EUR |
5000+ | 1.35 EUR |
IGP20N60H3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3
Type of transistor: IGBT
Power dissipation: 170W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3
Type of transistor: IGBT
Power dissipation: 170W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
auf Bestellung 403 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.13 EUR |
38+ | 1.89 EUR |
43+ | 1.70 EUR |
44+ | 1.63 EUR |
47+ | 1.54 EUR |
250+ | 1.49 EUR |
IGP20N60H3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3
Type of transistor: IGBT
Power dissipation: 170W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3
Type of transistor: IGBT
Power dissipation: 170W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 403 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.13 EUR |
38+ | 1.89 EUR |
43+ | 1.70 EUR |
44+ | 1.63 EUR |
47+ | 1.54 EUR |
250+ | 1.49 EUR |
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