Suchergebnisse für "STW20" : 116
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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STW 206 T | Knitter-Switch |
 Switch Toggle Mom OFF ON DPDT Round Lever Solder Tag 6A 250VAC 30VDC Panel Mount with Threads |
Produkt ist nicht verfügbar |
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STW200NF03 | STMicroelectronics |
Description: MOSFET N-CH 30V 120A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 60A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V |
Produkt ist nicht verfügbar |
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STW2040 | STMicroelectronics |
Description: TRANS NPN 500V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1.2A, 6A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 6A, 5V Supplier Device Package: TO-247-3 Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 125 W |
Produkt ist nicht verfügbar |
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STW206N | Knitter-Switch |
Switch Toggle ON ON DPDT Round Lever Solder Tag 6A 250VAC 30VDC Panel Mount with Threads |
Produkt ist nicht verfügbar |
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| STW20N60M2-EP | STMicroelectronics |
Description: MOSFET N-CHANNEL 600V 13A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 278mOhm @ 6.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 787 pF @ 100 V |
Produkt ist nicht verfügbar |
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STW20N60M2-EP | STMicroelectronics |
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW20N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 18A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 100 V |
Produkt ist nicht verfügbar |
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STW20N65M5 | STMicroelectronics |
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW20N90K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 13A; Idm: 80A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 13A Pulsed drain current: 80A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| STW20N90K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 13A; Idm: 80A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 13A Pulsed drain current: 80A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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STW20N90K5 | STMicroelectronics |
Trans MOSFET N-CH 900V 20A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW20N90K5 | STMicroelectronics |
Trans MOSFET N-CH 900V 20A 3-Pin(3+Tab) TO-247 Tube |
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| STW20N90K5 | STMicroelectronics |
Trans MOSFET N-CH 900V 20A 3-Pin(3+Tab) TO-247 Tube |
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| STW20N95DK5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 11A; Idm: 72A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 11A Pulsed drain current: 72A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 275mΩ Mounting: THT Gate charge: 50.7nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| STW20N95DK5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 11A; Idm: 72A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 11A Pulsed drain current: 72A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 275mΩ Mounting: THT Gate charge: 50.7nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW20N95DK5 | STMicroelectronics |
Description: MOSFET N-CH 950V 18A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 50.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
Produkt ist nicht verfügbar |
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STW20N95DK5 | STMicroelectronics |
Trans MOSFET N-CH 950V 18A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW20N95DK5 | STMicroelectronics |
Trans MOSFET N-CH 950V 18A 3-Pin(3+Tab) TO-247 Tube |
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STW20N95K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 11A; 250W; TO247 Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 11A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 275mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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STW20N95K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 11A; 250W; TO247 Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 11A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 275mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW20N95K5 | STMicroelectronics |
Trans MOSFET N-CH 950V 17.5A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW20N95K5 | STMicroelectronics |
Trans MOSFET N-CH 950V 17.5A 3-Pin(3+Tab) TO-247 Tube |
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STW20N95K5 | STMicroelectronics |
Trans MOSFET N-CH 950V 17.5A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW20N95K5 | STMicroelectronics |
MOSFET N-Ch 950V 2.75 Ohm 17.5A MDmesh K5 |
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STW20NB50 | STMicroelectronics |
Description: MOSFET N-CH 500V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V |
Produkt ist nicht verfügbar |
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STW20NK50Z | STMicroelectronics |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW20NK50Z | STMicroelectronics |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube |
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STW20NK50Z | STMicroelectronics |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube |
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STW20NK70Z | STMicroelectronics |
Description: MOSFET N-CH 700V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 285mOhm @ 10A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 150µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
Produkt ist nicht verfügbar |
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STW20NK70Z | STMicroelectronics |
Trans MOSFET N-CH 700V 20A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW20NM50 | STMicroelectronics |
Description: MOSFET N-CH 550V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V |
Produkt ist nicht verfügbar |
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STW20NM50 | STMicroelectronics |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW20NM50FD | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; 214W; TO247 Type of transistor: N-MOSFET Technology: FDmesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 214W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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STW20NM50FD | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; 214W; TO247 Type of transistor: N-MOSFET Technology: FDmesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 214W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW20NM50FD | STMicroelectronics |
Description: MOSFET N-CH 500V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V |
Produkt ist nicht verfügbar |
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STW20NM50FD | STMicroelectronics |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW20NM50FD | STMicroelectronics |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube |
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STW20NM60 | STMicroelectronics |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW20NM60FD | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 214W; TO247 Type of transistor: N-MOSFET Technology: FDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.6A Power dissipation: 214W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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STW20NM60FD | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 214W; TO247 Type of transistor: N-MOSFET Technology: FDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.6A Power dissipation: 214W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW20NM60FD | STMicroelectronics |
Description: MOSFET N-CH 600V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
Produkt ist nicht verfügbar |
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| STW20NM60FD | STMicroelectronics |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube |
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STW20NM60FD | STMicroelectronics |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW20NM60FD | STMicroelectronics |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW20NM60FD | STMicroelectronics |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW20NM60FD | STMicroelectronics |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW20NM65N | STMicroelectronics |
Description: MOSFET N-CH 650V 19A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
Produkt ist nicht verfügbar |
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2STW200 | STMicroelectronics |
Description: TRANS PNP DARL 80V 25A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3.5V @ 80mA, 20A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10A, 3V Supplier Device Package: TO-247-3 Part Status: Obsolete Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 130 W |
Produkt ist nicht verfügbar |
| STW 206 T |
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Hersteller: Knitter-Switch
Switch Toggle Mom OFF ON DPDT Round Lever Solder Tag 6A 250VAC 30VDC Panel Mount with Threads
Switch Toggle Mom OFF ON DPDT Round Lever Solder Tag 6A 250VAC 30VDC Panel Mount with Threads
Produkt ist nicht verfügbar
| STW200NF03 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 60A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
Description: MOSFET N-CH 30V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 60A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
Produkt ist nicht verfügbar
| STW2040 |
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Hersteller: STMicroelectronics
Description: TRANS NPN 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1.2A, 6A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 6A, 5V
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 125 W
Description: TRANS NPN 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1.2A, 6A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 6A, 5V
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 125 W
Produkt ist nicht verfügbar
| STW206N |
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Hersteller: Knitter-Switch
Switch Toggle ON ON DPDT Round Lever Solder Tag 6A 250VAC 30VDC Panel Mount with Threads
Switch Toggle ON ON DPDT Round Lever Solder Tag 6A 250VAC 30VDC Panel Mount with Threads
Produkt ist nicht verfügbar
| STW20N60M2-EP |
Hersteller: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 278mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 787 pF @ 100 V
Description: MOSFET N-CHANNEL 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 278mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 787 pF @ 100 V
Produkt ist nicht verfügbar
| STW20N60M2-EP |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20N65M5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 100 V
Description: MOSFET N-CH 650V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 100 V
Produkt ist nicht verfügbar
| STW20N65M5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20N90K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; Idm: 80A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; Idm: 80A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| STW20N90K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; Idm: 80A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; Idm: 80A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STW20N90K5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 900V 20A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 900V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20N90K5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 900V 20A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 900V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20N90K5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 900V 20A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 900V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20N95DK5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 11A; Idm: 72A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Gate charge: 50.7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 11A; Idm: 72A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Gate charge: 50.7nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| STW20N95DK5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 11A; Idm: 72A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Gate charge: 50.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 11A; Idm: 72A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Gate charge: 50.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STW20N95DK5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 50.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Description: MOSFET N-CH 950V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 50.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Produkt ist nicht verfügbar
| STW20N95DK5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 950V 18A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 950V 18A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20N95DK5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 950V 18A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 950V 18A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20N95K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 11A; 250W; TO247
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 11A; 250W; TO247
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| STW20N95K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 11A; 250W; TO247
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 11A; 250W; TO247
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STW20N95K5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 950V 17.5A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 950V 17.5A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20N95K5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 950V 17.5A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 950V 17.5A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20N95K5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 950V 17.5A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 950V 17.5A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20N95K5 |
|
Hersteller: STMicroelectronics
MOSFET N-Ch 950V 2.75 Ohm 17.5A MDmesh K5
MOSFET N-Ch 950V 2.75 Ohm 17.5A MDmesh K5
Produkt ist nicht verfügbar
| STW20NB50 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Produkt ist nicht verfügbar
| STW20NK50Z |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20NK50Z |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20NK50Z |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20NK70Z |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 700V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 10A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Description: MOSFET N-CH 700V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 10A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Produkt ist nicht verfügbar
| STW20NK70Z |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 700V 20A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 700V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20NM50 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 550V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Description: MOSFET N-CH 550V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Produkt ist nicht verfügbar
| STW20NM50 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20NM50FD |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; 214W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 214W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; 214W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 214W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| STW20NM50FD |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; 214W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 214W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; 214W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 214W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STW20NM50FD |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Produkt ist nicht verfügbar
| STW20NM50FD |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20NM50FD |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20NM60 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20NM60FD |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 214W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 214W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 214W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 214W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| STW20NM60FD |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 214W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 214W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 214W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 214W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STW20NM60FD |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
| STW20NM60FD |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20NM60FD |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20NM60FD |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20NM60FD |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20NM60FD |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| STW20NM65N |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Description: MOSFET N-CH 650V 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Produkt ist nicht verfügbar
| 2STW200 |
|
Hersteller: STMicroelectronics
Description: TRANS PNP DARL 80V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 80mA, 20A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10A, 3V
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 130 W
Description: TRANS PNP DARL 80V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 80mA, 20A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10A, 3V
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 130 W
Produkt ist nicht verfügbar
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