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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRFP240PBF | Vishay | Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 113 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP240PBF | VISHAY |
Description: VISHAY - IRFP240PBF - Leistungs-MOSFET, n-Kanal, 200 V, 20 A, 0.18 ohm, TO-247AC, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 150W Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.18ohm |
auf Bestellung 3149 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP243 | Harris Corporation |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 25 V |
auf Bestellung 181 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP244 | Siliconix |
N-MOSFET 15A 250V 150W 0.28Ω IRFP244; IRFP244 TIRFP244 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP244PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 9.7A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 373 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP244PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 9.7A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 373 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP244PBF | Vishay Siliconix |
Description: MOSFET N-CH 250V 15A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 9A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 4072 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP244PBF | Vishay Semiconductors | MOSFET 250V N-CH HEXFET |
auf Bestellung 857 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFP244PBF | Vishay | Trans MOSFET N-CH 250V 15A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP244PBF | Vishay | Trans MOSFET N-CH 250V 15A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP244PBF | Vishay | Trans MOSFET N-CH 250V 15A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP244PBF | VISHAY |
Description: VISHAY - IRFP244PBF - Leistungs-MOSFET, n-Kanal, 250 V, 15 A, 0.28 ohm, TO-247AC, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 250V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-247AC Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.28ohm SVHC: No SVHC (17-Dec-2014) |
auf Bestellung 241 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP245 | Harris Corporation |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 10A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP246 | Harris Corporation |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 275 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
auf Bestellung 5674 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP250 | Siliconix |
N-MOSFET 30A 200V 190W 0.085Ω IRFP250 TIRFP250 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP250M | Infineon |
N-MOSFET 30A 200V 214W 0.075Ω IRFP250M TIRFP250m Anzahl je Verpackung: 5 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP250M | International Rectifier |
N-MOSFET 30A 200V 214W 0.075Ω IRFP250M TIRFP250m Anzahl je Verpackung: 5 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP250MPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 30A Power dissipation: 214W Case: TO247AD Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Gate charge: 123nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250MPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 30A Power dissipation: 214W Case: TO247AD Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Gate charge: 123nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 77 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP250MPBF | Infineon Technologies |
Description: MOSFET N-CH 200V 30A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 18A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2159 pF @ 25 V |
auf Bestellung 7920 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP250MPBF | Infineon Technologies | MOSFET MOSFT 200V 30A 75mOhm 82nCAC |
auf Bestellung 3193 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFP250MPBF | Infineon Technologies | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube |
auf Bestellung 1404 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250MPBF | INFINEON |
Description: INFINEON - IRFP250MPBF - Leistungs-MOSFET, n-Kanal, 200 V, 30 A, 0.075 ohm, TO-247AC, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 214W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.075ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 9899 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250MPBF | Infineon Technologies | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube |
auf Bestellung 1404 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250MPBF | Infineon Technologies | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube |
auf Bestellung 1404 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250MPBF | Infineon Technologies | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube |
auf Bestellung 1535 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250N | International Rectifier |
N-MOSFET 30A 200V 214W 0.075Ω IRFP250N TIRFP250n Anzahl je Verpackung: 25 Stücke |
auf Bestellung 57 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP250NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 30A Power dissipation: 214W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Gate charge: 123nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 30A Power dissipation: 214W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Gate charge: 123nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP250NPBF | Infineon Technologies |
Description: MOSFET N-CH 200V 30A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 18A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2159 pF @ 25 V |
auf Bestellung 8181 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP250NPBF | Infineon Technologies | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube |
auf Bestellung 940 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250NPBF | Infineon Technologies | MOSFET MOSFT 200V 30A 75mOhm 82nCAC |
auf Bestellung 3324 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFP250NPBF | Infineon Technologies | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube |
auf Bestellung 6197 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250NPBF | Infineon Technologies | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube |
auf Bestellung 2353 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250NPBF | Infineon Technologies | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube |
auf Bestellung 6197 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250NPBF | Infineon Technologies | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube |
auf Bestellung 444 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250NPBF | Infineon Technologies | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube |
auf Bestellung 938 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250NPBF | Infineon Technologies | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube |
auf Bestellung 444 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250NPBF | INFINEON |
Description: INFINEON - IRFP250NPBF - Leistungs-MOSFET, n-Kanal, 200 V, 30 A, 0.075 ohm, TO-247AC, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 214W Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.075ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 828 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250NPBF | Infineon Technologies | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube |
auf Bestellung 940 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 191 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 191 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP250PBF | Vishay Siliconix |
Description: MOSFET N-CH 200V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V |
auf Bestellung 942 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP250PBF | Vishay | Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 428 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250PBF | Vishay Semiconductors | MOSFET 200V N-CH HEXFET |
auf Bestellung 4520 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFP250PBF | Vishay | Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 428 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250PBF | Vishay | Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 1550 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250PBF | Vishay | Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 428 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250PBF | Vishay | Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 283 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250PBF | Vishay | Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 283 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250S2453 | Harris Corporation |
Description: 33A, 200V, 0.085 OHM, N-CHANNEL Packaging: Bulk Part Status: Active |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP251 | Harris Corporation |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 17A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 265 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP254B | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
auf Bestellung 19183 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP254B | ONSEMI |
Description: ONSEMI - IRFP254B - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: NO euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO usEccn: EAR99 |
auf Bestellung 15903 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP254PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 23A Pulsed drain current: 92A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 308 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP254PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 23A Pulsed drain current: 92A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 308 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP254PBF | Vishay Siliconix |
Description: MOSFET N-CH 250V 23A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
auf Bestellung 3535 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP254PBF | Vishay | Trans MOSFET N-CH 250V 23A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 331 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP254PBF | VISHAY |
Description: VISHAY - IRFP254PBF - Leistungs-MOSFET, n-Kanal, 250 V, 23 A, 0.14 ohm, TO-247AC, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 250V rohsCompliant: YES Dauer-Drainstrom Id: 23A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 190W Bauform - Transistor: TO-247AC Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.14ohm SVHC: Lead (19-Jan-2021) |
auf Bestellung 339 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP254PBF | Vishay | Trans MOSFET N-CH 250V 23A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 496 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP240PBF |
Hersteller: Vishay
Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-247AC
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
37+ | 4.29 EUR |
44+ | 3.45 EUR |
100+ | 2.64 EUR |
IRFP240PBF |
Hersteller: VISHAY
Description: VISHAY - IRFP240PBF - Leistungs-MOSFET, n-Kanal, 200 V, 20 A, 0.18 ohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 150W
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.18ohm
Description: VISHAY - IRFP240PBF - Leistungs-MOSFET, n-Kanal, 200 V, 20 A, 0.18 ohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 150W
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.18ohm
auf Bestellung 3149 Stücke:
Lieferzeit 14-21 Tag (e)IRFP243 |
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 25 V
auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
116+ | 4.28 EUR |
IRFP244 |
Hersteller: Siliconix
N-MOSFET 15A 250V 150W 0.28Ω IRFP244; IRFP244 TIRFP244
Anzahl je Verpackung: 25 Stücke
N-MOSFET 15A 250V 150W 0.28Ω IRFP244; IRFP244 TIRFP244
Anzahl je Verpackung: 25 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 3.99 EUR |
IRFP244PBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 373 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 2.29 EUR |
35+ | 2.04 EUR |
46+ | 1.57 EUR |
49+ | 1.49 EUR |
IRFP244PBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 373 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 2.29 EUR |
35+ | 2.04 EUR |
46+ | 1.57 EUR |
49+ | 1.49 EUR |
IRFP244PBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 250V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 4072 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 5.91 EUR |
25+ | 5.86 EUR |
100+ | 5.03 EUR |
500+ | 4.92 EUR |
IRFP244PBF |
Hersteller: Vishay Semiconductors
MOSFET 250V N-CH HEXFET
MOSFET 250V N-CH HEXFET
auf Bestellung 857 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 6.97 EUR |
10+ | 5.69 EUR |
25+ | 5.56 EUR |
IRFP244PBF |
Hersteller: Vishay
Trans MOSFET N-CH 250V 15A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 250V 15A 3-Pin(3+Tab) TO-247AC
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 4.02 EUR |
42+ | 3.67 EUR |
44+ | 3.32 EUR |
IRFP244PBF |
Hersteller: Vishay
Trans MOSFET N-CH 250V 15A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 250V 15A 3-Pin(3+Tab) TO-247AC
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 4.37 EUR |
50+ | 3.97 EUR |
IRFP244PBF |
Hersteller: Vishay
Trans MOSFET N-CH 250V 15A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 250V 15A 3-Pin(3+Tab) TO-247AC
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 4.02 EUR |
42+ | 3.67 EUR |
44+ | 3.32 EUR |
IRFP244PBF |
Hersteller: VISHAY
Description: VISHAY - IRFP244PBF - Leistungs-MOSFET, n-Kanal, 250 V, 15 A, 0.28 ohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 250V
rohsCompliant: YES
Dauer-Drainstrom Id: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 150W
Bauform - Transistor: TO-247AC
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.28ohm
SVHC: No SVHC (17-Dec-2014)
Description: VISHAY - IRFP244PBF - Leistungs-MOSFET, n-Kanal, 250 V, 15 A, 0.28 ohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 250V
rohsCompliant: YES
Dauer-Drainstrom Id: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 150W
Bauform - Transistor: TO-247AC
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.28ohm
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 241 Stücke:
Lieferzeit 14-21 Tag (e)IRFP245 |
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
195+ | 2.54 EUR |
IRFP246 |
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 275 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 275 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 5674 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
188+ | 2.64 EUR |
IRFP250 |
Hersteller: Siliconix
N-MOSFET 30A 200V 190W 0.085Ω IRFP250 TIRFP250
Anzahl je Verpackung: 25 Stücke
N-MOSFET 30A 200V 190W 0.085Ω IRFP250 TIRFP250
Anzahl je Verpackung: 25 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 4.07 EUR |
IRFP250M |
Hersteller: Infineon
N-MOSFET 30A 200V 214W 0.075Ω IRFP250M TIRFP250m
Anzahl je Verpackung: 5 Stücke
N-MOSFET 30A 200V 214W 0.075Ω IRFP250M TIRFP250m
Anzahl je Verpackung: 5 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 5.43 EUR |
IRFP250M |
Hersteller: International Rectifier
N-MOSFET 30A 200V 214W 0.075Ω IRFP250M TIRFP250m
Anzahl je Verpackung: 5 Stücke
N-MOSFET 30A 200V 214W 0.075Ω IRFP250M TIRFP250m
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 5.43 EUR |
IRFP250MPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AD
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AD
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 2.62 EUR |
30+ | 2.42 EUR |
40+ | 1.82 EUR |
42+ | 1.72 EUR |
IRFP250MPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AD
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AD
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 2.62 EUR |
30+ | 2.42 EUR |
40+ | 1.82 EUR |
42+ | 1.72 EUR |
IRFP250MPBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 18A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2159 pF @ 25 V
Description: MOSFET N-CH 200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 18A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2159 pF @ 25 V
auf Bestellung 7920 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4 EUR |
100+ | 3.3 EUR |
500+ | 2.79 EUR |
1000+ | 2.37 EUR |
2000+ | 2.25 EUR |
5000+ | 2.16 EUR |
IRFP250MPBF |
Hersteller: Infineon Technologies
MOSFET MOSFT 200V 30A 75mOhm 82nCAC
MOSFET MOSFT 200V 30A 75mOhm 82nCAC
auf Bestellung 3193 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 5.69 EUR |
12+ | 4.37 EUR |
100+ | 3.67 EUR |
250+ | 3.64 EUR |
400+ | 2.68 EUR |
1200+ | 2.59 EUR |
2800+ | 2.54 EUR |
IRFP250MPBF |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
auf Bestellung 1404 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
58+ | 2.7 EUR |
69+ | 2.2 EUR |
100+ | 1.73 EUR |
250+ | 1.56 EUR |
400+ | 1.27 EUR |
1200+ | 1.13 EUR |
IRFP250MPBF |
Hersteller: INFINEON
Description: INFINEON - IRFP250MPBF - Leistungs-MOSFET, n-Kanal, 200 V, 30 A, 0.075 ohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 214W
Anzahl der Pins: 3Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.075ohm
SVHC: No SVHC (23-Jan-2024)
Description: INFINEON - IRFP250MPBF - Leistungs-MOSFET, n-Kanal, 200 V, 30 A, 0.075 ohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 214W
Anzahl der Pins: 3Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.075ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 9899 Stücke:
Lieferzeit 14-21 Tag (e)IRFP250MPBF |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
auf Bestellung 1404 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
58+ | 2.7 EUR |
69+ | 2.2 EUR |
100+ | 1.73 EUR |
250+ | 1.56 EUR |
400+ | 1.27 EUR |
1200+ | 1.13 EUR |
IRFP250MPBF |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
auf Bestellung 1404 Stücke:
Lieferzeit 14-21 Tag (e)IRFP250MPBF |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
auf Bestellung 1535 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
118+ | 1.33 EUR |
124+ | 1.22 EUR |
139+ | 1.05 EUR |
200+ | 0.97 EUR |
500+ | 0.93 EUR |
IRFP250N |
Hersteller: International Rectifier
N-MOSFET 30A 200V 214W 0.075Ω IRFP250N TIRFP250n
Anzahl je Verpackung: 25 Stücke
N-MOSFET 30A 200V 214W 0.075Ω IRFP250N TIRFP250n
Anzahl je Verpackung: 25 Stücke
auf Bestellung 57 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 6.95 EUR |
IRFP250NPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.46 EUR |
23+ | 3.12 EUR |
29+ | 2.49 EUR |
31+ | 2.36 EUR |
IRFP250NPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.46 EUR |
23+ | 3.12 EUR |
29+ | 2.49 EUR |
31+ | 2.36 EUR |
IRFP250NPBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 18A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2159 pF @ 25 V
Description: MOSFET N-CH 200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 18A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2159 pF @ 25 V
auf Bestellung 8181 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.77 EUR |
25+ | 4.71 EUR |
100+ | 4.04 EUR |
500+ | 3.59 EUR |
1000+ | 3.08 EUR |
2000+ | 2.9 EUR |
5000+ | 2.78 EUR |
IRFP250NPBF |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
auf Bestellung 940 Stücke:
Lieferzeit 14-21 Tag (e)IRFP250NPBF |
Hersteller: Infineon Technologies
MOSFET MOSFT 200V 30A 75mOhm 82nCAC
MOSFET MOSFT 200V 30A 75mOhm 82nCAC
auf Bestellung 3324 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 6.58 EUR |
10+ | 6.5 EUR |
25+ | 5.46 EUR |
100+ | 4.6 EUR |
400+ | 3.61 EUR |
1200+ | 3.38 EUR |
IRFP250NPBF |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
auf Bestellung 6197 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
44+ | 3.58 EUR |
45+ | 3.42 EUR |
47+ | 3.12 EUR |
100+ | 2.57 EUR |
400+ | 1.9 EUR |
1200+ | 1.7 EUR |
2800+ | 1.54 EUR |
5200+ | 1.51 EUR |
IRFP250NPBF |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
auf Bestellung 2353 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 2.19 EUR |
85+ | 1.78 EUR |
100+ | 1.62 EUR |
200+ | 1.55 EUR |
800+ | 1.36 EUR |
1600+ | 1.22 EUR |
IRFP250NPBF |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
auf Bestellung 6197 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
44+ | 3.58 EUR |
45+ | 3.42 EUR |
47+ | 3.12 EUR |
100+ | 2.57 EUR |
400+ | 1.9 EUR |
1200+ | 1.7 EUR |
2800+ | 1.54 EUR |
5200+ | 1.51 EUR |
IRFP250NPBF |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
auf Bestellung 444 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
44+ | 3.43 EUR |
47+ | 3.12 EUR |
100+ | 2.57 EUR |
400+ | 1.91 EUR |
IRFP250NPBF |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
auf Bestellung 938 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
60+ | 2.61 EUR |
61+ | 2.49 EUR |
64+ | 2.3 EUR |
100+ | 1.99 EUR |
400+ | 1.59 EUR |
500+ | 1.5 EUR |
IRFP250NPBF |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
auf Bestellung 444 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
44+ | 3.43 EUR |
47+ | 3.12 EUR |
100+ | 2.57 EUR |
400+ | 1.91 EUR |
IRFP250NPBF |
Hersteller: INFINEON
Description: INFINEON - IRFP250NPBF - Leistungs-MOSFET, n-Kanal, 200 V, 30 A, 0.075 ohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 214W
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.075ohm
SVHC: No SVHC (23-Jan-2024)
Description: INFINEON - IRFP250NPBF - Leistungs-MOSFET, n-Kanal, 200 V, 30 A, 0.075 ohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 214W
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.075ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 828 Stücke:
Lieferzeit 14-21 Tag (e)IRFP250NPBF |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
auf Bestellung 940 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
60+ | 2.62 EUR |
61+ | 2.5 EUR |
63+ | 2.3 EUR |
100+ | 1.99 EUR |
400+ | 1.59 EUR |
500+ | 1.51 EUR |
IRFP250PBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 2.23 EUR |
36+ | 2 EUR |
46+ | 1.59 EUR |
48+ | 1.5 EUR |
IRFP250PBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 191 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 2.23 EUR |
36+ | 2 EUR |
46+ | 1.59 EUR |
48+ | 1.5 EUR |
500+ | 1.49 EUR |
IRFP250PBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Description: MOSFET N-CH 200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 942 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.27 EUR |
25+ | 6.2 EUR |
100+ | 5.31 EUR |
500+ | 4.72 EUR |
IRFP250PBF |
Hersteller: Vishay
Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)IRFP250PBF |
Hersteller: Vishay Semiconductors
MOSFET 200V N-CH HEXFET
MOSFET 200V N-CH HEXFET
auf Bestellung 4520 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 8.24 EUR |
10+ | 6.73 EUR |
25+ | 6.16 EUR |
100+ | 6.06 EUR |
500+ | 5.69 EUR |
IRFP250PBF |
Hersteller: Vishay
Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
69+ | 2.3 EUR |
IRFP250PBF |
Hersteller: Vishay
Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC
auf Bestellung 1550 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
42+ | 3.76 EUR |
400+ | 3.33 EUR |
800+ | 3 EUR |
1200+ | 2.74 EUR |
IRFP250PBF |
Hersteller: Vishay
Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 6.13 EUR |
32+ | 4.72 EUR |
33+ | 4.4 EUR |
100+ | 3.82 EUR |
250+ | 3.59 EUR |
IRFP250PBF |
Hersteller: Vishay
Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
41+ | 3.83 EUR |
47+ | 3.23 EUR |
49+ | 3.01 EUR |
100+ | 2.7 EUR |
250+ | 2.56 EUR |
IRFP250PBF |
Hersteller: Vishay
Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
41+ | 3.83 EUR |
47+ | 3.23 EUR |
49+ | 3.01 EUR |
100+ | 2.7 EUR |
250+ | 2.56 EUR |
IRFP250S2453 |
Hersteller: Harris Corporation
Description: 33A, 200V, 0.085 OHM, N-CHANNEL
Packaging: Bulk
Part Status: Active
Description: 33A, 200V, 0.085 OHM, N-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
188+ | 2.64 EUR |
IRFP251 |
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 17A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 17A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
148+ | 3.35 EUR |
IRFP254B |
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 19183 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
452+ | 1.09 EUR |
IRFP254B |
Hersteller: ONSEMI
Description: ONSEMI - IRFP254B - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
Description: ONSEMI - IRFP254B - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
auf Bestellung 15903 Stücke:
Lieferzeit 14-21 Tag (e)IRFP254PBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 2.97 EUR |
27+ | 2.67 EUR |
34+ | 2.12 EUR |
36+ | 2 EUR |
IRFP254PBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 308 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 2.97 EUR |
27+ | 2.67 EUR |
34+ | 2.12 EUR |
36+ | 2 EUR |
500+ | 1.99 EUR |
IRFP254PBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: MOSFET N-CH 250V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 3535 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.7 EUR |
25+ | 4.66 EUR |
100+ | 3.99 EUR |
500+ | 3.9 EUR |
IRFP254PBF |
Hersteller: Vishay
Trans MOSFET N-CH 250V 23A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 250V 23A 3-Pin(3+Tab) TO-247AC
auf Bestellung 331 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
74+ | 2.04 EUR |
76+ | 1.93 EUR |
IRFP254PBF |
Hersteller: VISHAY
Description: VISHAY - IRFP254PBF - Leistungs-MOSFET, n-Kanal, 250 V, 23 A, 0.14 ohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 250V
rohsCompliant: YES
Dauer-Drainstrom Id: 23A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 190W
Bauform - Transistor: TO-247AC
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.14ohm
SVHC: Lead (19-Jan-2021)
Description: VISHAY - IRFP254PBF - Leistungs-MOSFET, n-Kanal, 250 V, 23 A, 0.14 ohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 250V
rohsCompliant: YES
Dauer-Drainstrom Id: 23A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 190W
Bauform - Transistor: TO-247AC
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.14ohm
SVHC: Lead (19-Jan-2021)
auf Bestellung 339 Stücke:
Lieferzeit 14-21 Tag (e)IRFP254PBF |
Hersteller: Vishay
Trans MOSFET N-CH 250V 23A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 250V 23A 3-Pin(3+Tab) TO-247AC
auf Bestellung 496 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 6.2 EUR |
30+ | 5.19 EUR |
36+ | 4.09 EUR |
100+ | 3.56 EUR |
250+ | 3.35 EUR |