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5.0SMCJ45CA 5.0SMCJ45CA SMC Diode Solutions 5.0SMCJ%20SERIES%20N0240%20REV.C.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68.8A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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5.0SMCJ45CA 5.0SMCJ45CA SMC Diode Solutions 5.0SMCJ%20SERIES%20N0240%20REV.C.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68.8A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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MBR2090CT MBR2090CT SMC Diode Solutions MBR2080-100CT%20N0623%20REV.B.pdf Description: DIODE ARRAY SCHOTTKY 90V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 90 V
Produkt ist nicht verfügbar
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ER5E ER5E SMC Diode Solutions ER5(A-J)%20N0994%20REV.A.pdf Description: DIODE STANDARD 300V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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S2M0016120D-1 S2M0016120D-1 SMC Diode Solutions S2M0016120D-1%20N2762%20REV.A.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V
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S2M0016120K-1 S2M0016120K-1 SMC Diode Solutions S2M0016120K-1%20N2705%20REV.A.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V
Produkt ist nicht verfügbar
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30BQ015 30BQ015 SMC Diode Solutions 30BQ015%20N0025%20REV.A.pdf Description: DIODE SCHOTTKY 15V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1120pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 mA @ 15 V
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10BQ060 10BQ060 SMC Diode Solutions 10BQ060%20N0645%20REV.A.pdf description Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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10BQ060 10BQ060 SMC Diode Solutions 10BQ060%20N0645%20REV.A.pdf description Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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S3M0040120J S3M0040120J SMC Diode Solutions S3M0040120J%20N2801%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
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S3M0016120B S3M0016120B SMC Diode Solutions S3M0016120B%20N2823%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 576W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
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SICRB10650CT SICRB10650CT SMC Diode Solutions SICR10650CT%20%20SICRB10650CT%20%20SICRD10650CT%20%20SICRF10650CT%20N1871%20Draft%201.pdf Description: DIODE SIL CARBIDE 650V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
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SMBJ13A SMBJ13A SMC Diode Solutions SMBJ%20SERIES%20N0193%20REV.D.pdf Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
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SK56 SK56 SMC Diode Solutions SK56%20N0940%20REV.A.pdf Description: DIODE SCHOTTKY 60V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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SK56 SK56 SMC Diode Solutions SK56%20N0940%20REV.A.pdf Description: DIODE SCHOTTKY 60V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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ST6045C ST6045C SMC Diode Solutions ST6045C%20N2583%20REV.-.pdf Description: DIODE ARR SCHOTT 45V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Produkt ist nicht verfügbar
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10MQ040N 10MQ040N SMC Diode Solutions 10MQ040N%20N0231%20REV.A.pdf description Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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10MQ040N 10MQ040N SMC Diode Solutions 10MQ040N%20N0231%20REV.A.pdf description Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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10BQ030 10BQ030 SMC Diode Solutions 10BQ030%20N0643%20REV.A.pdf description Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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10BQ030 10BQ030 SMC Diode Solutions 10BQ030%20N0643%20REV.A.pdf description Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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10BQ040 10BQ040 SMC Diode Solutions 10BQ040%20N0644%20REV.A.pdf description Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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10BQ040 10BQ040 SMC Diode Solutions 10BQ040%20N0644%20REV.A.pdf description Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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SMBJ300A SMBJ300A SMC Diode Solutions SMBJ%20SERIES%20N0193%20REV.D.pdf Description: TVS DIODE 300VWM 486VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 335V
Voltage - Clamping (Max) @ Ipp: 486V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ300A SMBJ300A SMC Diode Solutions SMBJ%20SERIES%20N0193%20REV.D.pdf Description: TVS DIODE 300VWM 486VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 335V
Voltage - Clamping (Max) @ Ipp: 486V
Power - Peak Pulse: 600W
Power Line Protection: No
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3.0SMCJ5.0A 3.0SMCJ5.0A SMC Diode Solutions 3.0SMCJ%20SERIES%20N0001%20REV.B.pdf Description: TVS DIODE 5VWM 9.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 326.1A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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S3M0040120D S3M0040120D SMC Diode Solutions S3M0040120D%20N2817%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
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S3M0040120K S3M0040120K SMC Diode Solutions S3M0040120K%20N2759%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
Produkt ist nicht verfügbar
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S3M0025120D S3M0025120D SMC Diode Solutions S3M0025120D%20N2816%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
Produkt ist nicht verfügbar
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S3M0025120K S3M0025120K SMC Diode Solutions S3M0025120K%20N2774%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
Produkt ist nicht verfügbar
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S3M0040120T SMC Diode Solutions S3M0040120T%20N2848%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
Produkt ist nicht verfügbar
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S3M0040120T SMC Diode Solutions S3M0040120T%20N2848%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
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1+26.57 EUR
10+18.6 EUR
100+14.08 EUR
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S3M0025120T S3M0025120T SMC Diode Solutions S3M0025120T%20N2849%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1800 Stücke
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S3M0025120T S3M0025120T SMC Diode Solutions S3M0025120T%20N2849%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
Produkt ist nicht verfügbar
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S3M0040120N S3M0040120N SMC Diode Solutions S3M0040120N%20N2800%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
Produkt ist nicht verfügbar
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S3M0016120N S3M0016120N SMC Diode Solutions S3M0016120N%20N2799%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 732W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
Produkt ist nicht verfügbar
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ABF6U ABF6U SMC Diode Solutions ABF2U%20THRU%20ABF10U%20N1827%20REV.A.pdf Description: BRIDGE RECT 1PHASE 600V 1A ABF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABF
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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ABF6U ABF6U SMC Diode Solutions ABF2U%20THRU%20ABF10U%20N1827%20REV.A.pdf Description: BRIDGE RECT 1PHASE 600V 1A ABF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABF
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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SD125SC150A.T1 SD125SC150A.T1 SMC Diode Solutions SD125SC150A%20D0067%20REV.-.pdf Description: DIODE SCHOTTKY 150V 15A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 150 V
auf Bestellung 488 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.88 EUR
10+3.13 EUR
25+2.67 EUR
100+2.14 EUR
300+1.83 EUR
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8TQ100 8TQ100 SMC Diode Solutions 8TQ080-100(S)%20N0639%20REV.A.pdf description Description: DIODE SCHOTTKY 100V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
auf Bestellung 218 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.59 EUR
13+1.63 EUR
50+1.21 EUR
100+1.08 EUR
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ABS6 ABS6 SMC Diode Solutions ABS2%20THRU%20ABS10%20N1693%20REV.A.pdf Description: BRIDGE RECT 1P 600V 500MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 15000 Stücke:
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5000+0.095 EUR
15000+0.081 EUR
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ABS6 ABS6 SMC Diode Solutions ABS2%20THRU%20ABS10%20N1693%20REV.A.pdf Description: BRIDGE RECT 1P 600V 500MA ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 19739 Stücke:
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42+0.5 EUR
69+0.31 EUR
95+0.23 EUR
109+0.19 EUR
500+0.14 EUR
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MBRF10200CT MBRF10200CT SMC Diode Solutions MBRF10200CT%20N0079%20REV.B.pdf Description: DIODE ARRAY SCHOTT 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 1852 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.03 EUR
17+1.26 EUR
50+0.93 EUR
100+0.82 EUR
500+0.64 EUR
Mindestbestellmenge: 11 Stücke
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3.0SMCJ11A 3.0SMCJ11A SMC Diode Solutions 3.0SMCJ%20SERIES%20N0001%20REV.B.pdf Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 184.8A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SM8S30A SM8S30A SMC Diode Solutions SM8S20A%20THRU%20SM8S43A%20N2148%20REV.-.pdf Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 136A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 750 Stücke
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SM8S30A SM8S30A SMC Diode Solutions SM8S20A%20THRU%20SM8S43A%20N2148%20REV.-.pdf Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 136A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FR104 FR104 SMC Diode Solutions FR101-FR107%20N0441%20REV.B.pdf Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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S16LC36-8 S16LC36-8 SMC Diode Solutions S16LC03-8%20THRU%20S16LC36-8%20N0288%20REV.B.pdf Description: TVS DIODE 36VWM 51VC 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, Telecom
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: 16-SO
Unidirectional Channels: 8
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: Yes
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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S16LC36-8 S16LC36-8 SMC Diode Solutions S16LC03-8%20THRU%20S16LC36-8%20N0288%20REV.B.pdf Description: TVS DIODE 36VWM 51VC 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, Telecom
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: 16-SO
Unidirectional Channels: 8
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: Yes
Produkt ist nicht verfügbar
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S5D25170H S5D25170H SMC Diode Solutions S5D25170H%20N2525%20REV.A.pdf Description: DIODE SCHOTTKY 1700V 66A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2252pF @ 0V, 1MHz
Current - Average Rectified (Io): 66A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1700 V
Produkt ist nicht verfügbar
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SMBJ440A SMBJ440A SMC Diode Solutions SMBJ%20SERIES%20N0193%20REV.D.pdf Description: TVS DIODE 440VWM 713VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 900mA
Voltage - Reverse Standoff (Typ): 440V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 492V
Voltage - Clamping (Max) @ Ipp: 713V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
 Mindestbestellmenge: 42000 Stücke
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SM090KJ800G1 SM090KJ800G1 SMC Diode Solutions SM090KD800G1%20SM090KC800G1%20SM090KJ800G1%20SM090KE800G1%20N2205%20REV.E.pdf Description: DIODE MODULE GEN PURP 800V 100A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 100 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
Produkt ist nicht verfügbar
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50WQ06FN 50WQ06FN SMC Diode Solutions 50WQ06FN%20N0709%20REV.A.pdf Description: DIODE SCHOTTKY 60V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 10 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.37 EUR
7500+0.32 EUR
Mindestbestellmenge: 2500 Stücke
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50WQ06FN 50WQ06FN SMC Diode Solutions 50WQ06FN%20N0709%20REV.A.pdf Description: DIODE SCHOTTKY 60V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 10 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
auf Bestellung 22893 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.55 EUR
22+0.95 EUR
50+0.7 EUR
100+0.62 EUR
500+0.46 EUR
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SF18G SF18G SMC Diode Solutions SF11G-SF18G%20N1807%20REV.A.pdf Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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SF18G SF18G SMC Diode Solutions SF11G-SF18G%20N1807%20REV.A.pdf Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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MBR20200CT MBR20200CT SMC Diode Solutions MBR20200CT(-1)%20MBRB20200CT%20N0763%20REV.A.pdf Description: DIODE ARRAY SCHOTT 200V TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 11033 Stücke:
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10+2.36 EUR
50+1.77 EUR
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MBR1045 MBR1045 SMC Diode Solutions MBR1045%20N0615%20REV.A.pdf Description: DIODE SCHOTTKY 45V TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 9038 Stücke:
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MBRB20200CT MBRB20200CT SMC Diode Solutions MBR20200CT(-1)%20MBRB20200CT%20N0763%20REV.A.pdf Description: DIODE ARRAY SCHOTTKY 200V D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 7200 Stücke:
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MBRB20200CT MBRB20200CT SMC Diode Solutions MBR20200CT(-1)%20MBRB20200CT%20N0763%20REV.A.pdf Description: DIODE ARRAY SCHOTTKY 200V D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 7974 Stücke:
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FR1J FR1J SMC Diode Solutions FR1A-FR1M%20N0438%20REV.B.pdf Description: DIODE STANDARD 600V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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5.0SMCJ45CA 5.0SMCJ%20SERIES%20N0240%20REV.C.pdf
5.0SMCJ45CA
Hersteller: SMC Diode Solutions
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68.8A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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5.0SMCJ45CA 5.0SMCJ%20SERIES%20N0240%20REV.C.pdf
5.0SMCJ45CA
Hersteller: SMC Diode Solutions
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68.8A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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MBR2090CT MBR2080-100CT%20N0623%20REV.B.pdf
MBR2090CT
Hersteller: SMC Diode Solutions
Description: DIODE ARRAY SCHOTTKY 90V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 90 V
Produkt ist nicht verfügbar
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ER5E ER5(A-J)%20N0994%20REV.A.pdf
ER5E
Hersteller: SMC Diode Solutions
Description: DIODE STANDARD 300V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
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S2M0016120D-1 S2M0016120D-1%20N2762%20REV.A.pdf
S2M0016120D-1
Hersteller: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V
Produkt ist nicht verfügbar
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S2M0016120K-1 S2M0016120K-1%20N2705%20REV.A.pdf
S2M0016120K-1
Hersteller: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V
Produkt ist nicht verfügbar
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30BQ015 30BQ015%20N0025%20REV.A.pdf
30BQ015
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 15V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1120pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 mA @ 15 V
Produkt ist nicht verfügbar
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10BQ060 description 10BQ060%20N0645%20REV.A.pdf
10BQ060
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.14 EUR
9000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
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10BQ060 description 10BQ060%20N0645%20REV.A.pdf
10BQ060
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
auf Bestellung 63054 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
52+0.4 EUR
72+0.3 EUR
100+0.26 EUR
500+0.19 EUR
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S3M0040120J S3M0040120J%20N2801%20REV.-.pdf
S3M0040120J
Hersteller: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
Produkt ist nicht verfügbar
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S3M0016120B S3M0016120B%20N2823%20REV.-.pdf
S3M0016120B
Hersteller: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 576W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
Produkt ist nicht verfügbar
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SICRB10650CT SICR10650CT%20%20SICRB10650CT%20%20SICRD10650CT%20%20SICRF10650CT%20N1871%20Draft%201.pdf
SICRB10650CT
Hersteller: SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
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SMBJ13A SMBJ%20SERIES%20N0193%20REV.D.pdf
SMBJ13A
Hersteller: SMC Diode Solutions
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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SK56 SK56%20N0940%20REV.A.pdf
SK56
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.3 EUR
9000+0.26 EUR
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SK56 SK56%20N0940%20REV.A.pdf
SK56
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
auf Bestellung 31331 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.3 EUR
26+0.81 EUR
50+0.6 EUR
100+0.52 EUR
500+0.39 EUR
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ST6045C ST6045C%20N2583%20REV.-.pdf
ST6045C
Hersteller: SMC Diode Solutions
Description: DIODE ARR SCHOTT 45V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Produkt ist nicht verfügbar
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10MQ040N description 10MQ040N%20N0231%20REV.A.pdf
10MQ040N
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.098 EUR
15000+0.083 EUR
Mindestbestellmenge: 5000 Stücke
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10MQ040N description 10MQ040N%20N0231%20REV.A.pdf
10MQ040N
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 84814 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
67+0.31 EUR
93+0.23 EUR
107+0.19 EUR
500+0.14 EUR
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10BQ030 description 10BQ030%20N0643%20REV.A.pdf
10BQ030
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.14 EUR
9000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
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10BQ030 description 10BQ030%20N0643%20REV.A.pdf
10BQ030
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 96299 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
52+0.4 EUR
72+0.3 EUR
100+0.25 EUR
500+0.19 EUR
Mindestbestellmenge: 32 Stücke
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10BQ040 description 10BQ040%20N0644%20REV.A.pdf
10BQ040
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.14 EUR
9000+0.12 EUR
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10BQ040 description 10BQ040%20N0644%20REV.A.pdf
10BQ040
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
auf Bestellung 52945 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
53+0.4 EUR
73+0.29 EUR
100+0.25 EUR
500+0.19 EUR
Mindestbestellmenge: 33 Stücke
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SMBJ300A SMBJ%20SERIES%20N0193%20REV.D.pdf
SMBJ300A
Hersteller: SMC Diode Solutions
Description: TVS DIODE 300VWM 486VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 335V
Voltage - Clamping (Max) @ Ipp: 486V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.32 EUR
9000+0.29 EUR
Mindestbestellmenge: 3000 Stücke
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SMBJ300A SMBJ%20SERIES%20N0193%20REV.D.pdf
SMBJ300A
Hersteller: SMC Diode Solutions
Description: TVS DIODE 300VWM 486VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 335V
Voltage - Clamping (Max) @ Ipp: 486V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 11829 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.4 EUR
25+0.86 EUR
50+0.63 EUR
100+0.55 EUR
500+0.42 EUR
Mindestbestellmenge: 15 Stücke
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3.0SMCJ5.0A 3.0SMCJ%20SERIES%20N0001%20REV.B.pdf
3.0SMCJ5.0A
Hersteller: SMC Diode Solutions
Description: TVS DIODE 5VWM 9.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 326.1A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 42000 Stücke
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S3M0040120D S3M0040120D%20N2817%20REV.-.pdf
S3M0040120D
Hersteller: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
Produkt ist nicht verfügbar
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S3M0040120K S3M0040120K%20N2759%20REV.-.pdf
S3M0040120K
Hersteller: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
Produkt ist nicht verfügbar
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S3M0025120D S3M0025120D%20N2816%20REV.-.pdf
S3M0025120D
Hersteller: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
Produkt ist nicht verfügbar
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S3M0025120K S3M0025120K%20N2774%20REV.-.pdf
S3M0025120K
Hersteller: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
Produkt ist nicht verfügbar
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S3M0040120T S3M0040120T%20N2848%20REV.-.pdf
Hersteller: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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S3M0040120T S3M0040120T%20N2848%20REV.-.pdf
Hersteller: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+26.57 EUR
10+18.6 EUR
100+14.08 EUR
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S3M0025120T S3M0025120T%20N2849%20REV.-.pdf
S3M0025120T
Hersteller: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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S3M0025120T S3M0025120T%20N2849%20REV.-.pdf
S3M0025120T
Hersteller: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
Produkt ist nicht verfügbar
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S3M0040120N S3M0040120N%20N2800%20REV.-.pdf
S3M0040120N
Hersteller: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
Produkt ist nicht verfügbar
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S3M0016120N S3M0016120N%20N2799%20REV.-.pdf
S3M0016120N
Hersteller: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 732W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
Produkt ist nicht verfügbar
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ABF6U ABF2U%20THRU%20ABF10U%20N1827%20REV.A.pdf
ABF6U
Hersteller: SMC Diode Solutions
Description: BRIDGE RECT 1PHASE 600V 1A ABF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABF
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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ABF6U ABF2U%20THRU%20ABF10U%20N1827%20REV.A.pdf
ABF6U
Hersteller: SMC Diode Solutions
Description: BRIDGE RECT 1PHASE 600V 1A ABF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABF
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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SD125SC150A.T1 SD125SC150A%20D0067%20REV.-.pdf
SD125SC150A.T1
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 150V 15A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 150 V
auf Bestellung 488 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.88 EUR
10+3.13 EUR
25+2.67 EUR
100+2.14 EUR
300+1.83 EUR
Mindestbestellmenge: 5 Stücke
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8TQ100 description 8TQ080-100(S)%20N0639%20REV.A.pdf
8TQ100
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 100V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
auf Bestellung 218 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.59 EUR
13+1.63 EUR
50+1.21 EUR
100+1.08 EUR
Mindestbestellmenge: 9 Stücke
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ABS6 ABS2%20THRU%20ABS10%20N1693%20REV.A.pdf
ABS6
Hersteller: SMC Diode Solutions
Description: BRIDGE RECT 1P 600V 500MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.095 EUR
15000+0.081 EUR
Mindestbestellmenge: 5000 Stücke
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ABS6 ABS2%20THRU%20ABS10%20N1693%20REV.A.pdf
ABS6
Hersteller: SMC Diode Solutions
Description: BRIDGE RECT 1P 600V 500MA ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 19739 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
69+0.31 EUR
95+0.23 EUR
109+0.19 EUR
500+0.14 EUR
Mindestbestellmenge: 42 Stücke
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MBRF10200CT MBRF10200CT%20N0079%20REV.B.pdf
MBRF10200CT
Hersteller: SMC Diode Solutions
Description: DIODE ARRAY SCHOTT 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 1852 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.03 EUR
17+1.26 EUR
50+0.93 EUR
100+0.82 EUR
500+0.64 EUR
Mindestbestellmenge: 11 Stücke
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3.0SMCJ11A 3.0SMCJ%20SERIES%20N0001%20REV.B.pdf
3.0SMCJ11A
Hersteller: SMC Diode Solutions
Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 184.8A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 42000 Stücke
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SM8S30A SM8S20A%20THRU%20SM8S43A%20N2148%20REV.-.pdf
SM8S30A
Hersteller: SMC Diode Solutions
Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 136A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM8S30A SM8S20A%20THRU%20SM8S43A%20N2148%20REV.-.pdf
SM8S30A
Hersteller: SMC Diode Solutions
Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 136A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FR104 FR101-FR107%20N0441%20REV.B.pdf
FR104
Hersteller: SMC Diode Solutions
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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S16LC36-8 S16LC03-8%20THRU%20S16LC36-8%20N0288%20REV.B.pdf
S16LC36-8
Hersteller: SMC Diode Solutions
Description: TVS DIODE 36VWM 51VC 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, Telecom
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: 16-SO
Unidirectional Channels: 8
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: Yes
Produkt ist nicht verfügbar
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S16LC36-8 S16LC03-8%20THRU%20S16LC36-8%20N0288%20REV.B.pdf
S16LC36-8
Hersteller: SMC Diode Solutions
Description: TVS DIODE 36VWM 51VC 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, Telecom
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: 16-SO
Unidirectional Channels: 8
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: Yes
Produkt ist nicht verfügbar
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S5D25170H S5D25170H%20N2525%20REV.A.pdf
S5D25170H
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 1700V 66A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2252pF @ 0V, 1MHz
Current - Average Rectified (Io): 66A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1700 V
Produkt ist nicht verfügbar
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SMBJ440A SMBJ%20SERIES%20N0193%20REV.D.pdf
SMBJ440A
Hersteller: SMC Diode Solutions
Description: TVS DIODE 440VWM 713VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 900mA
Voltage - Reverse Standoff (Typ): 440V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 492V
Voltage - Clamping (Max) @ Ipp: 713V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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SM090KJ800G1 SM090KD800G1%20SM090KC800G1%20SM090KJ800G1%20SM090KE800G1%20N2205%20REV.E.pdf
SM090KJ800G1
Hersteller: SMC Diode Solutions
Description: DIODE MODULE GEN PURP 800V 100A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 100 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
Produkt ist nicht verfügbar
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50WQ06FN 50WQ06FN%20N0709%20REV.A.pdf
50WQ06FN
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 10 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
auf Bestellung 22500 Stücke:
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AnzahlPrivatkunde
2500+0.37 EUR
7500+0.32 EUR
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50WQ06FN 50WQ06FN%20N0709%20REV.A.pdf
50WQ06FN
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 10 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
auf Bestellung 22893 Stücke:
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AnzahlPrivatkunde
14+1.55 EUR
22+0.95 EUR
50+0.7 EUR
100+0.62 EUR
500+0.46 EUR
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SF18G SF11G-SF18G%20N1807%20REV.A.pdf
SF18G
Hersteller: SMC Diode Solutions
Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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SF18G SF11G-SF18G%20N1807%20REV.A.pdf
SF18G
Hersteller: SMC Diode Solutions
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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MBR20200CT MBR20200CT(-1)%20MBRB20200CT%20N0763%20REV.A.pdf
MBR20200CT
Hersteller: SMC Diode Solutions
Description: DIODE ARRAY SCHOTT 200V TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 11033 Stücke:
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AnzahlPrivatkunde
6+3.71 EUR
10+2.36 EUR
50+1.77 EUR
100+1.58 EUR
500+1.25 EUR
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MBR1045 MBR1045%20N0615%20REV.A.pdf
MBR1045
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY 45V TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 9038 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.52 EUR
10+2.89 EUR
50+2.19 EUR
100+1.96 EUR
500+1.57 EUR
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MBRB20200CT MBR20200CT(-1)%20MBRB20200CT%20N0763%20REV.A.pdf
MBRB20200CT
Hersteller: SMC Diode Solutions
Description: DIODE ARRAY SCHOTTKY 200V D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+0.83 EUR
2400+0.73 EUR
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MBRB20200CT MBR20200CT(-1)%20MBRB20200CT%20N0763%20REV.A.pdf
MBRB20200CT
Hersteller: SMC Diode Solutions
Description: DIODE ARRAY SCHOTTKY 200V D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 7974 Stücke:
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AnzahlPrivatkunde
8+2.7 EUR
13+1.71 EUR
50+1.27 EUR
100+1.13 EUR
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FR1J FR1A-FR1M%20N0438%20REV.B.pdf
FR1J
Hersteller: SMC Diode Solutions
Description: DIODE STANDARD 600V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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