Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (164335) > Seite 1138 nach 2739
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STGF10H60DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 10A; 30W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 30W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 57nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 261 Stücke: Lieferzeit 7-14 Tag (e) |
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| STGF10NB60SD | STMicroelectronics |
STGF10NB60SD THT IGBT transistors |
auf Bestellung 64 Stücke: Lieferzeit 7-14 Tag (e) |
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STGF10NC60KD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 6A; 25W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 25W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 19nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 402 Stücke: Lieferzeit 7-14 Tag (e) |
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STGF14NC60KD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 7A; 28W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 28W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: THT Gate charge: 34.4nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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STGF19NC60HD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 10A; 32W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 32W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 53nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 38 Stücke: Lieferzeit 7-14 Tag (e) |
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STGF19NC60KD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 10A; 32W; TO220FP Type of transistor: IGBT Power dissipation: 32W Case: TO220FP Mounting: THT Gate charge: 55nC Kind of package: tube Collector current: 10A Gate-emitter voltage: ±20V Pulsed collector current: 75A Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| STGF20H60DF | STMicroelectronics |
STGF20H60DF THT IGBT transistors |
auf Bestellung 98 Stücke: Lieferzeit 7-14 Tag (e) |
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STGF30M65DF2 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 30A; 38W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 38W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 80nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 76 Stücke: Lieferzeit 7-14 Tag (e) |
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STGF3NC120HD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 3A; 25W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 3A Power dissipation: 25W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: THT Gate charge: 24nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| STGF7H60DF | STMicroelectronics |
STGF7H60DF THT IGBT transistors |
auf Bestellung 96 Stücke: Lieferzeit 7-14 Tag (e) |
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| STGF7NB60SL | STMicroelectronics |
STGF7NB60SL THT IGBT transistors |
auf Bestellung 74 Stücke: Lieferzeit 7-14 Tag (e) |
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STGIF5CH60TS-L | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Technology: SLLIMM 2nd Mounting: THT Operating temperature: -40...125°C Power dissipation: 30W Output current: 5A Number of channels: 6 Collector-emitter voltage: 600V Operating voltage: 13.5...18/0...400V DC Frequency: 20kHz Kind of integrated circuit: 3-phase motor controller; IPM Case: SDIP2F-26L Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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| STGIPN3H60 | STMicroelectronics |
STGIPN3H60 Motor and PWM drivers |
auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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STGIPN3H60AT | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM nano Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: SLLIMM nano Case: NDIP-26L Output current: 3A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 12...17/0...500V DC Frequency: 25kHz Power dissipation: 8W Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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STGIPQ3H60T-HZS | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge,NTC thermistor; 3A; Ch: 6 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: SLLIMM nano 2nd Case: N2DIP-26L type Z Output current: 3A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18/0...500V DC Frequency: 25kHz Power dissipation: 12W Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP10M65DF2 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 10A; 115W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 115W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 28nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 143 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP10NC60HD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 10A; 65W; TO220AB Type of transistor: IGBT Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 19.2nC Collector current: 10A Pulsed collector current: 30A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 284 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP10NC60KD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 10A; 65W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 65W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 19nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP14NC60KD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 14A; 80W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 14A Power dissipation: 80W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: THT Gate charge: 34.4nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 61 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP19NC60HD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 130W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 130W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 31nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP20H60DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 115nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 185 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP20NC60V | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 30A; 200W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 200W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 0.1µC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP20V60DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 116nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP30H60DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 30A; 260W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 105nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 424 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP30M65DF2 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 30A; 258W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 258W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 80nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP3NC120HD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 7A; 75W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 7A Power dissipation: 75W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: THT Gate charge: 24nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 52 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP5H60DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 5A; 88W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 88W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: THT Gate charge: 38nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 98 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP6NC60HD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 15A; 56W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 56W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 21A Mounting: THT Gate charge: 21nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 91 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP7H60DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 7A; 88W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 88W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 28A Mounting: THT Gate charge: 46nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 286 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP7NC60HD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 14A; 80W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 14A Power dissipation: 80W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: THT Gate charge: 48nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 282 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP8NC60KD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 8A; 65W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8A Power dissipation: 65W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 19nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW19NC60HD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 21A; 140W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 21A Power dissipation: 140W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 53nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW20IH125DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.25kV; 20A; 259W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.25kV Collector current: 20A Power dissipation: 259W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 69nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 39 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW20NC60V | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 30A; 200W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 0.1µC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW20NC60VD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 30A; 200W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.14µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 883 Stücke: Lieferzeit 7-14 Tag (e) |
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| STGW20V60DF | STMicroelectronics |
STGW20V60DF THT IGBT transistors |
auf Bestellung 56 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW28IH125DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.25kV; 30A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.25kV Collector current: 30A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 114nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW30H60DFB | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 30A; 260W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 149nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 171 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW30H65FB | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 30A; 260W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 260W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 149nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 42 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW30NC120HD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 30A; 220W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 220W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 135A Mounting: THT Gate charge: 110nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW30NC60KD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 28A; 200W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 28A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 125A Mounting: THT Gate charge: 96nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 102 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW30NC60WD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 30A; 200W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.14µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 109 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW30V60DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 30A; 258W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 258W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 163nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 179 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW39NC60VD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 250W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 220A Mounting: THT Gate charge: 126nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 219 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW40H120DF2 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 468W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 158nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW40H65DFB | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 283W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 283W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 160A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 272 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW40NC60KD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 38A; 250W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 38A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 220A Mounting: THT Gate charge: 135nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW40V60DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 80A; 283W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 80A Power dissipation: 283W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 226nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW60H65DFB | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 68 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW60V60DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 334nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW75H65DFB2-4 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 71A; 357W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 71A Power dissipation: 357W Case: TO247-4 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 207nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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STGW80H65DFB | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 80A; 470W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 470W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 414nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 105 Stücke: Lieferzeit 7-14 Tag (e) |
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| STGW80V60DF | STMicroelectronics |
STGW80V60DF THT IGBT transistors |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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STGWA15H120DF2 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 259W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 67nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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STGWA25M120DF3 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3 Collector current: 25A Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 100A Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Gate charge: 85nC Power dissipation: 375W Collector-emitter voltage: 1.2kV Kind of package: tube Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 64 Stücke: Lieferzeit 7-14 Tag (e) |
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STGWA30H65DFB | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 30A; 260W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 260W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 149nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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STGWA40H120DF2 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 468W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 158nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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STGWA40H65DFB2 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 45A; 230W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 45A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 160A Mounting: THT Gate charge: 153nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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STGWA50IH65DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 158nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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STGWA75H65DFB2 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 207nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 38 Stücke: Lieferzeit 7-14 Tag (e) |
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| STGF10H60DF |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 30W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 30W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 261 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.77 EUR |
| 45+ | 1.6 EUR |
| 49+ | 1.49 EUR |
| 51+ | 1.42 EUR |
| 150+ | 1.27 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 1.14 EUR |
| STGF10NB60SD |
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Hersteller: STMicroelectronics
STGF10NB60SD THT IGBT transistors
STGF10NB60SD THT IGBT transistors
auf Bestellung 64 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.76 EUR |
| 39+ | 1.86 EUR |
| 41+ | 1.74 EUR |
| STGF10NC60KD |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 402 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.87 EUR |
| 43+ | 1.69 EUR |
| 46+ | 1.56 EUR |
| 50+ | 1.49 EUR |
| 150+ | 1.34 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.22 EUR |
| STGF14NC60KD |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 28W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 28W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 34.4nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 28W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 28W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 34.4nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.25 EUR |
| 50+ | 1.43 EUR |
| 100+ | 1.06 EUR |
| 250+ | 0.99 EUR |
| STGF19NC60HD |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 32W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 32W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 32W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 32W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.89 EUR |
| 50+ | 1.76 EUR |
| STGF19NC60KD |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 32W; TO220FP
Type of transistor: IGBT
Power dissipation: 32W
Case: TO220FP
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 32W; TO220FP
Type of transistor: IGBT
Power dissipation: 32W
Case: TO220FP
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.15 EUR |
| 50+ | 2.39 EUR |
| 150+ | 2.14 EUR |
| 500+ | 2 EUR |
| 1000+ | 1.94 EUR |
| STGF20H60DF |
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Hersteller: STMicroelectronics
STGF20H60DF THT IGBT transistors
STGF20H60DF THT IGBT transistors
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.59 EUR |
| 44+ | 1.66 EUR |
| 46+ | 1.57 EUR |
| STGF30M65DF2 |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 38W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 38W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 38W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 38W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.53 EUR |
| 32+ | 2.27 EUR |
| 34+ | 2.12 EUR |
| 50+ | 2.02 EUR |
| 150+ | 1.82 EUR |
| 500+ | 1.69 EUR |
| 1000+ | 1.64 EUR |
| STGF3NC120HD |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 3A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 3A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 3A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 3A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.15 EUR |
| STGF7H60DF |
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Hersteller: STMicroelectronics
STGF7H60DF THT IGBT transistors
STGF7H60DF THT IGBT transistors
auf Bestellung 96 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.72 EUR |
| 67+ | 1.07 EUR |
| 71+ | 1.02 EUR |
| STGF7NB60SL |
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Hersteller: STMicroelectronics
STGF7NB60SL THT IGBT transistors
STGF7NB60SL THT IGBT transistors
auf Bestellung 74 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.6 EUR |
| 40+ | 1.83 EUR |
| 42+ | 1.73 EUR |
| STGIF5CH60TS-L |
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Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Technology: SLLIMM 2nd
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 30W
Output current: 5A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...18/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SDIP2F-26L
Anzahl je Verpackung: 1 Stücke
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Technology: SLLIMM 2nd
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 30W
Output current: 5A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...18/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SDIP2F-26L
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 11.91 EUR |
| 10+ | 9.02 EUR |
| STGIPN3H60 |
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Hersteller: STMicroelectronics
STGIPN3H60 Motor and PWM drivers
STGIPN3H60 Motor and PWM drivers
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.34 EUR |
| 8+ | 10.21 EUR |
| STGIPN3H60AT |
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Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM nano
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: SLLIMM nano
Case: NDIP-26L
Output current: 3A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 12...17/0...500V DC
Frequency: 25kHz
Power dissipation: 8W
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM nano
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: SLLIMM nano
Case: NDIP-26L
Output current: 3A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 12...17/0...500V DC
Frequency: 25kHz
Power dissipation: 8W
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.9 EUR |
| 9+ | 8.14 EUR |
| 10+ | 7.21 EUR |
| 17+ | 7.15 EUR |
| STGIPQ3H60T-HZS |
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Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; 3A; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: SLLIMM nano 2nd
Case: N2DIP-26L type Z
Output current: 3A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18/0...500V DC
Frequency: 25kHz
Power dissipation: 12W
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; 3A; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: SLLIMM nano 2nd
Case: N2DIP-26L type Z
Output current: 3A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18/0...500V DC
Frequency: 25kHz
Power dissipation: 12W
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| STGP10M65DF2 |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 143 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.97 EUR |
| 57+ | 1.27 EUR |
| 62+ | 1.16 EUR |
| STGP10NC60HD |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; TO220AB
Type of transistor: IGBT
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 19.2nC
Collector current: 10A
Pulsed collector current: 30A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; TO220AB
Type of transistor: IGBT
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 19.2nC
Collector current: 10A
Pulsed collector current: 30A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 284 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.97 EUR |
| 41+ | 1.77 EUR |
| 46+ | 1.56 EUR |
| 52+ | 1.4 EUR |
| 100+ | 1.33 EUR |
| STGP10NC60KD |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.19 EUR |
| 50+ | 1.43 EUR |
| STGP14NC60KD |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 34.4nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 34.4nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.19 EUR |
| 35+ | 2.09 EUR |
| 40+ | 1.8 EUR |
| 50+ | 1.53 EUR |
| STGP19NC60HD |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 130W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 130W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 130W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 130W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 8.94 EUR |
| 10+ | 7.15 EUR |
| 50+ | 2.39 EUR |
| 250+ | 2.23 EUR |
| STGP20H60DF |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 185 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.12 EUR |
| 38+ | 1.92 EUR |
| 41+ | 1.77 EUR |
| 50+ | 1.7 EUR |
| 150+ | 1.52 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.37 EUR |
| STGP20NC60V | ![]() |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |
| 10+ | 7.15 EUR |
| 50+ | 2.87 EUR |
| 150+ | 2.57 EUR |
| 500+ | 2.4 EUR |
| 1000+ | 2.33 EUR |
| STGP20V60DF |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.6 EUR |
| 33+ | 2.2 EUR |
| 50+ | 1.94 EUR |
| 100+ | 1.87 EUR |
| STGP30H60DF |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 424 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.86 EUR |
| 28+ | 2.57 EUR |
| 30+ | 2.39 EUR |
| 50+ | 2.27 EUR |
| 150+ | 2.04 EUR |
| 500+ | 1.9 EUR |
| 1000+ | 1.86 EUR |
| STGP30M65DF2 |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.17 EUR |
| 25+ | 2.86 EUR |
| 26+ | 2.75 EUR |
| 50+ | 2.53 EUR |
| 150+ | 2.27 EUR |
| 500+ | 2.13 EUR |
| 1000+ | 2.06 EUR |
| STGP3NC120HD |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 7A; 75W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 7A
Power dissipation: 75W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 7A; 75W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 7A
Power dissipation: 75W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 1.99 EUR |
| 47+ | 1.53 EUR |
| 50+ | 1.47 EUR |
| 100+ | 1.32 EUR |
| STGP5H60DF |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 88W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 88W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 88W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 88W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.89 EUR |
| 46+ | 1.59 EUR |
| 54+ | 1.33 EUR |
| 65+ | 1.12 EUR |
| 100+ | 0.96 EUR |
| 250+ | 0.94 EUR |
| STGP6NC60HD |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 56W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 56W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 56W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 56W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 91 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 100+ | 0.93 EUR |
| STGP7H60DF |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 286 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 61+ | 1.19 EUR |
| 65+ | 1.1 EUR |
| 69+ | 1.04 EUR |
| 150+ | 0.94 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.86 EUR |
| STGP7NC60HD | ![]() |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 282 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.14 EUR |
| 48+ | 1.52 EUR |
| 71+ | 1.02 EUR |
| STGP8NC60KD |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 8A; 65W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 8A; 65W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 3.98 EUR |
| 50+ | 1.43 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.86 EUR |
| STGW19NC60HD |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 21A; 140W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 21A
Power dissipation: 140W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 21A; 140W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 21A
Power dissipation: 140W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.23 EUR |
| 18+ | 3.98 EUR |
| 22+ | 3.39 EUR |
| 30+ | 2.6 EUR |
| 120+ | 2.5 EUR |
| STGW20IH125DF |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.25kV; 20A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.25kV
Collector current: 20A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.25kV; 20A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.25kV
Collector current: 20A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.92 EUR |
| 23+ | 3.13 EUR |
| 30+ | 2.79 EUR |
| STGW20NC60V |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.03 EUR |
| 22+ | 3.26 EUR |
| 30+ | 2.85 EUR |
| 120+ | 2.39 EUR |
| 300+ | 2.13 EUR |
| 510+ | 2.07 EUR |
| STGW20NC60VD | ![]() |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 883 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.6 EUR |
| 30+ | 2.39 EUR |
| 36+ | 2.03 EUR |
| 90+ | 1.74 EUR |
| 120+ | 1.72 EUR |
| STGW20V60DF |
![]() |
Hersteller: STMicroelectronics
STGW20V60DF THT IGBT transistors
STGW20V60DF THT IGBT transistors
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.66 EUR |
| 26+ | 2.79 EUR |
| 28+ | 2.65 EUR |
| STGW28IH125DF |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.25kV; 30A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.25kV
Collector current: 30A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.25kV; 30A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.25kV
Collector current: 30A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.52 EUR |
| 18+ | 4.06 EUR |
| 20+ | 3.59 EUR |
| 30+ | 3.23 EUR |
| STGW30H60DFB |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 171 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.15 EUR |
| 25+ | 2.87 EUR |
| 30+ | 2.49 EUR |
| 120+ | 1.84 EUR |
| 510+ | 1.79 EUR |
| STGW30H65FB |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.28 EUR |
| 19+ | 3.78 EUR |
| 22+ | 3.37 EUR |
| 30+ | 2.66 EUR |
| 120+ | 2.63 EUR |
| STGW30NC120HD |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 220W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 220W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 135A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 220W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 220W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 135A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.93 EUR |
| 17+ | 4.23 EUR |
| 20+ | 3.73 EUR |
| 25+ | 3.63 EUR |
| STGW30NC60KD |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 125A
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 125A
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 102 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.15 EUR |
| 15+ | 5.02 EUR |
| 30+ | 3.89 EUR |
| 90+ | 3 EUR |
| 120+ | 2.86 EUR |
| 510+ | 2.57 EUR |
| STGW30NC60WD |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 109 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.85 EUR |
| 15+ | 5.06 EUR |
| 20+ | 4.45 EUR |
| 30+ | 4.02 EUR |
| 120+ | 3.8 EUR |
| STGW30V60DF |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 258W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 258W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 179 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 3.98 EUR |
| 20+ | 3.75 EUR |
| 23+ | 3.17 EUR |
| 30+ | 3.06 EUR |
| STGW39NC60VD |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 219 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.18 EUR |
| 19+ | 3.9 EUR |
| 30+ | 3.62 EUR |
| 120+ | 3.23 EUR |
| 510+ | 2.95 EUR |
| 2010+ | 2.82 EUR |
| STGW40H120DF2 |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.34 EUR |
| 10+ | 11.43 EUR |
| 30+ | 10.9 EUR |
| 120+ | 9.8 EUR |
| 600+ | 9.47 EUR |
| 1200+ | 9.14 EUR |
| STGW40H65DFB |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 272 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.33 EUR |
| 34+ | 2.16 EUR |
| 35+ | 2.04 EUR |
| 90+ | 2 EUR |
| STGW40NC60KD |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 38A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 38A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 38A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 38A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.66 EUR |
| 12+ | 6.01 EUR |
| 13+ | 5.56 EUR |
| 30+ | 5.31 EUR |
| 120+ | 4.76 EUR |
| 600+ | 4.6 EUR |
| 1200+ | 4.45 EUR |
| STGW40V60DF |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 80A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 80A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.43 EUR |
| 18+ | 4.05 EUR |
| 20+ | 3.68 EUR |
| 30+ | 2.87 EUR |
| 60+ | 2.56 EUR |
| STGW60H65DFB |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.13 EUR |
| 17+ | 4.39 EUR |
| 30+ | 3.39 EUR |
| 60+ | 3.3 EUR |
| STGW60V60DF |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 334nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 334nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.9 EUR |
| 21+ | 3.42 EUR |
| 30+ | 2.66 EUR |
| 120+ | 2.65 EUR |
| STGW75H65DFB2-4 |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 71A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 71A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 207nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 71A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 71A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 207nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.68 EUR |
| 10+ | 7.84 EUR |
| STGW80H65DFB |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 105 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.99 EUR |
| 10+ | 7.94 EUR |
| STGW80V60DF |
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Hersteller: STMicroelectronics
STGW80V60DF THT IGBT transistors
STGW80V60DF THT IGBT transistors
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.41 EUR |
| 11+ | 6.51 EUR |
| 120+ | 5.26 EUR |
| STGWA15H120DF2 |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.63 EUR |
| 17+ | 4.2 EUR |
| 30+ | 3.68 EUR |
| 120+ | 3.3 EUR |
| 600+ | 3.2 EUR |
| 1200+ | 3.09 EUR |
| STGWA25M120DF3 |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3
Collector current: 25A
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 100A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Gate charge: 85nC
Power dissipation: 375W
Collector-emitter voltage: 1.2kV
Kind of package: tube
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3
Collector current: 25A
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 100A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Gate charge: 85nC
Power dissipation: 375W
Collector-emitter voltage: 1.2kV
Kind of package: tube
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 64 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.51 EUR |
| 13+ | 5.63 EUR |
| 30+ | 3.93 EUR |
| STGWA30H65DFB |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| 10+ | 7.15 EUR |
| 30+ | 3.33 EUR |
| STGWA40H120DF2 |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.25 EUR |
| 13+ | 5.62 EUR |
| 14+ | 5.21 EUR |
| 30+ | 4.96 EUR |
| 120+ | 4.46 EUR |
| 600+ | 4.32 EUR |
| 1200+ | 4.16 EUR |
| STGWA40H65DFB2 |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 230W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 230W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.8 EUR |
| 22+ | 3.25 EUR |
| 30+ | 2.86 EUR |
| STGWA50IH65DF |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.32 EUR |
| 15+ | 4.79 EUR |
| 17+ | 4.43 EUR |
| 30+ | 4.23 EUR |
| 120+ | 3.8 EUR |
| 600+ | 3.68 EUR |
| 1200+ | 3.55 EUR |
| STGWA75H65DFB2 |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 207nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 207nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.72 EUR |
| 14+ | 5.31 EUR |
| 16+ | 4.48 EUR |































