Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (161899) > Seite 1138 nach 2699
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STF18N60M6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 8.2A; Idm: 38A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.2A Pulsed drain current: 38A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.28Ω Mounting: THT Gate charge: 16.8nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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STF18NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; 30W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.2A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.285Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 77 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF19NF20 | STMicroelectronics |
STF19NF20 THT N channel transistors |
auf Bestellung 127 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF20N90K5 | STMicroelectronics |
STF20N90K5 THT N channel transistors |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF21N65M5 | STMicroelectronics |
STF21N65M5 THT N channel transistors |
auf Bestellung 39 Stücke: Lieferzeit 7-14 Tag (e) |
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STF22N60DM6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 9.5A; Idm: 43A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.5A Pulsed drain current: 43A Power dissipation: 29W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.24Ω Mounting: THT Gate charge: 20.6nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ M6 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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STF22N60M6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 9.5A; Idm: 42A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.5A Pulsed drain current: 42A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.23Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ M6 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 79 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF22NM60N | STMicroelectronics |
STF22NM60N THT N channel transistors |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF23N80K5 | STMicroelectronics |
STF23N80K5 THT N channel transistors |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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STF24N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; FDmesh™ II Plus; unipolar; 600V; 11A; 30W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: FDmesh™ II Plus Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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STF24N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 30W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: MDmesh™ || Plus Anzahl je Verpackung: 1 Stücke |
auf Bestellung 129 Stücke: Lieferzeit 7-14 Tag (e) |
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STF24N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 64A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 64A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.23Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF24NM60N | STMicroelectronics |
STF24NM60N THT N channel transistors |
auf Bestellung 309 Stücke: Lieferzeit 7-14 Tag (e) |
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STF25N60M2-EP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 72A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 72A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 188mΩ Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 36 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF25N80K5 | STMicroelectronics |
STF25N80K5 THT N channel transistors |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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STF26NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 35W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 135mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 157 Stücke: Lieferzeit 7-14 Tag (e) |
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STF28N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 80A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF28NM50N | STMicroelectronics |
STF28NM50N THT N channel transistors |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF2N80K5 | STMicroelectronics |
STF2N80K5 THT N channel transistors |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF33N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 26A; 35W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 35W Case: TO220FP On-state resistance: 108mΩ Mounting: THT Gate charge: 45.5nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| STF33N65M2 | STMicroelectronics |
STF33N65M2 THT N channel transistors |
auf Bestellung 57 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF34NM60ND | STMicroelectronics |
STF34NM60ND THT N channel transistors |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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STF35N65DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 90A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 56.3nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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STF38N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 120A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 95mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 32 Stücke: Lieferzeit 7-14 Tag (e) |
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STF3LN80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2A Pulsed drain current: 8A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.25Ω Mounting: THT Gate charge: 2.63nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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STF3NK80Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 126 Stücke: Lieferzeit 7-14 Tag (e) |
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STF40N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 136A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 136A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 88mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 46 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF40NF20 | STMicroelectronics |
STF40NF20 THT N channel transistors |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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STF45N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 40W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 82 Stücke: Lieferzeit 7-14 Tag (e) |
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STF4N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 94 Stücke: Lieferzeit 7-14 Tag (e) |
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STF4N90K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 16A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 16A Power dissipation: 20W Gate charge: 5.3nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF5NK100Z | STMicroelectronics |
STF5NK100Z THT N channel transistors |
auf Bestellung 628 Stücke: Lieferzeit 7-14 Tag (e) |
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STF6N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 20W Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.9A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF6N90K5 | STMicroelectronics |
STF6N90K5 THT N channel transistors |
auf Bestellung 86 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF6N95K5 | STMicroelectronics |
STF6N95K5 THT N channel transistors |
auf Bestellung 47 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF7N105K5 | STMicroelectronics |
STF7N105K5 THT N channel transistors |
auf Bestellung 46 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF80N1K1K6 | STMicroelectronics | STF80N1K1K6 THT N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF80N340K6 | STMicroelectronics | STF80N340K6 THT N channel transistors |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF80N450K6 | STMicroelectronics | STF80N450K6 THT N channel transistors |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF80N900K6 | STMicroelectronics | STF80N900K6 THT N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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STF8N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 4.4A; 25W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.4A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 46 Stücke: Lieferzeit 7-14 Tag (e) |
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STF8N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 24A Gate charge: 16.5nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 175 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF8NK100Z | STMicroelectronics |
STF8NK100Z THT N channel transistors |
auf Bestellung 92 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF8NM50N | STMicroelectronics |
STF8NM50N THT N channel transistors |
auf Bestellung 198 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF9N60M2 | STMicroelectronics |
STF9N60M2 THT N channel transistors |
auf Bestellung 140 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF9NK90Z | STMicroelectronics |
STF9NK90Z THT N channel transistors |
auf Bestellung 118 Stücke: Lieferzeit 7-14 Tag (e) |
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| STFW1N105K3 | STMicroelectronics |
STFW1N105K3 THT N channel transistors |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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STFW3N150 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 1.6A Power dissipation: 63W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 91 Stücke: Lieferzeit 7-14 Tag (e) |
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| STFW4N150 | STMicroelectronics |
STFW4N150 THT N channel transistors |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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STG3157CTR | STMicroelectronics |
Category: Interfaces others - integrated circuitsDescription: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.65÷5.5VDC Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer; SPDT Case: SOT323-6L Supply voltage: 1.65...5.5V DC Mounting: SMD Interface: GPIO Number of channels: 1 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8816 Stücke: Lieferzeit 7-14 Tag (e) |
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STG719STR | STMicroelectronics |
Category: Interfaces others - integrated circuitsDescription: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.8÷5.5VDC Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer; SPDT Case: SOT23-6 Supply voltage: 1.8...5.5V DC Mounting: SMD Interface: GPIO Number of channels: 1 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2637 Stücke: Lieferzeit 7-14 Tag (e) |
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STGB10NB37LZT4 | STMicroelectronics |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems; ESD Type of transistor: IGBT Collector-emitter voltage: 440V Collector current: 20A Power dissipation: 125W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: internally clamped; logic level Application: ignition systems Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 732 Stücke: Lieferzeit 7-14 Tag (e) |
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STGB10NC60HDT4 | STMicroelectronics |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 10A; 65W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 65W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 19.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 750 Stücke: Lieferzeit 7-14 Tag (e) |
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| STGB19NC60HDT4 | STMicroelectronics |
STGB19NC60HDT4 SMD IGBT transistors |
auf Bestellung 957 Stücke: Lieferzeit 7-14 Tag (e) |
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STGD10NC60KDT4 | STMicroelectronics |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 10A; 62W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 62W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1896 Stücke: Lieferzeit 7-14 Tag (e) |
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STGD5H60DF | STMicroelectronics |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 5A; 83W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 83W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2305 Stücke: Lieferzeit 7-14 Tag (e) |
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STGD5NB120SZT4 | STMicroelectronics |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 5A; 75W; DPAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 5A Power dissipation: 75W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 10A Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: internally clamped Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2423 Stücke: Lieferzeit 7-14 Tag (e) |
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| STGD6NC60H-1 | STMicroelectronics |
STGD6NC60H-1 SMD IGBT transistors |
auf Bestellung 126 Stücke: Lieferzeit 7-14 Tag (e) |
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STGD6NC60HDT4 | STMicroelectronics |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 15A; 56W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 56W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 21A Mounting: SMD Gate charge: 13.6nC Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1788 Stücke: Lieferzeit 7-14 Tag (e) |
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STGD7NB60ST4 | STMicroelectronics |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 7A; 55W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 55W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2078 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF18N60M6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 8.2A; Idm: 38A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Pulsed drain current: 38A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 16.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 8.2A; Idm: 38A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Pulsed drain current: 38A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 16.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.75 EUR |
| 50+ | 1.43 EUR |
| STF18NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; 30W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; 30W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.45 EUR |
| 50+ | 1.73 EUR |
| STF19NF20 |
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Hersteller: STMicroelectronics
STF19NF20 THT N channel transistors
STF19NF20 THT N channel transistors
auf Bestellung 127 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2 EUR |
| 67+ | 1.07 EUR |
| 68+ | 1.06 EUR |
| 72+ | 1 EUR |
| STF20N90K5 |
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Hersteller: STMicroelectronics
STF20N90K5 THT N channel transistors
STF20N90K5 THT N channel transistors
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.17 EUR |
| 14+ | 5.38 EUR |
| 15+ | 5.08 EUR |
| STF21N65M5 |
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Hersteller: STMicroelectronics
STF21N65M5 THT N channel transistors
STF21N65M5 THT N channel transistors
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 5.98 EUR |
| 17+ | 4.22 EUR |
| 18+ | 3.99 EUR |
| 25+ | 3.85 EUR |
| STF22N60DM6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 9.5A; Idm: 43A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.5A
Pulsed drain current: 43A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 20.6nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M6
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 9.5A; Idm: 43A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.5A
Pulsed drain current: 43A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 20.6nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 5+ | 14.3 EUR |
| 10+ | 7.15 EUR |
| 25+ | 2.86 EUR |
| 50+ | 2.19 EUR |
| STF22N60M6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 9.5A; Idm: 42A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.5A
Pulsed drain current: 42A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M6
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 9.5A; Idm: 42A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.5A
Pulsed drain current: 42A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.89 EUR |
| 26+ | 2.8 EUR |
| 28+ | 2.65 EUR |
| 50+ | 2.59 EUR |
| STF22NM60N |
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Hersteller: STMicroelectronics
STF22NM60N THT N channel transistors
STF22NM60N THT N channel transistors
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.93 EUR |
| 38+ | 1.9 EUR |
| 40+ | 1.8 EUR |
| STF23N80K5 |
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Hersteller: STMicroelectronics
STF23N80K5 THT N channel transistors
STF23N80K5 THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.09 EUR |
| 17+ | 4.35 EUR |
| 18+ | 4.1 EUR |
| STF24N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II Plus; unipolar; 600V; 11A; 30W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: FDmesh™ II Plus
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II Plus; unipolar; 600V; 11A; 30W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: FDmesh™ II Plus
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.36 EUR |
| 34+ | 2.14 EUR |
| 42+ | 1.73 EUR |
| 50+ | 1.5 EUR |
| STF24N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 30W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ || Plus
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 30W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ || Plus
Anzahl je Verpackung: 1 Stücke
auf Bestellung 129 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.09 EUR |
| 39+ | 1.84 EUR |
| 50+ | 1.66 EUR |
| 100+ | 1.59 EUR |
| STF24N65M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 64A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 64A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.1 EUR |
| 25+ | 2.86 EUR |
| STF24NM60N |
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Hersteller: STMicroelectronics
STF24NM60N THT N channel transistors
STF24NM60N THT N channel transistors
auf Bestellung 309 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.88 EUR |
| 33+ | 2.19 EUR |
| 35+ | 2.06 EUR |
| 2000+ | 1.99 EUR |
| STF25N60M2-EP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 72A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 188mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 72A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 188mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.56 EUR |
| 31+ | 2.36 EUR |
| 34+ | 2.12 EUR |
| 36+ | 2 EUR |
| STF25N80K5 |
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Hersteller: STMicroelectronics
STF25N80K5 THT N channel transistors
STF25N80K5 THT N channel transistors
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 7.14 EUR |
| 14+ | 5.16 EUR |
| 25+ | 5.08 EUR |
| STF26NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 35W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 35W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 157 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.46 EUR |
| 100+ | 4.03 EUR |
| 250+ | 3.83 EUR |
| 400+ | 3.72 EUR |
| 500+ | 3.68 EUR |
| 750+ | 3.58 EUR |
| 1000+ | 3.5 EUR |
| STF28N65M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.93 EUR |
| 29+ | 2.55 EUR |
| STF28NM50N |
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Hersteller: STMicroelectronics
STF28NM50N THT N channel transistors
STF28NM50N THT N channel transistors
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.74 EUR |
| 17+ | 4.2 EUR |
| 20+ | 3.58 EUR |
| 3000+ | 2.87 EUR |
| STF2N80K5 |
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Hersteller: STMicroelectronics
STF2N80K5 THT N channel transistors
STF2N80K5 THT N channel transistors
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 91+ | 0.79 EUR |
| 97+ | 0.74 EUR |
| STF33N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 35W
Case: TO220FP
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 45.5nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 35W
Case: TO220FP
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 45.5nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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| STF33N65M2 |
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Hersteller: STMicroelectronics
STF33N65M2 THT N channel transistors
STF33N65M2 THT N channel transistors
auf Bestellung 57 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.09 EUR |
| 27+ | 2.67 EUR |
| 29+ | 2.53 EUR |
| STF34NM60ND |
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Hersteller: STMicroelectronics
STF34NM60ND THT N channel transistors
STF34NM60ND THT N channel transistors
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 35.75 EUR |
| 4+ | 17.88 EUR |
| 10+ | 7.15 EUR |
| 50+ | 5.23 EUR |
| STF35N65DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.66 EUR |
| 11+ | 6.89 EUR |
| 12+ | 6.09 EUR |
| 50+ | 5.48 EUR |
| STF38N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.43 EUR |
| 50+ | 4.55 EUR |
| STF3LN80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.25Ω
Mounting: THT
Gate charge: 2.63nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.25Ω
Mounting: THT
Gate charge: 2.63nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.86 EUR |
| STF3NK80Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 126 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 2.99 EUR |
| 42+ | 1.73 EUR |
| 50+ | 1.46 EUR |
| 100+ | 1.36 EUR |
| 250+ | 1.22 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 1.04 EUR |
| STF40N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 136A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 136A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.41 EUR |
| 15+ | 4.85 EUR |
| 17+ | 4.25 EUR |
| 50+ | 3.7 EUR |
| STF40NF20 |
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Hersteller: STMicroelectronics
STF40NF20 THT N channel transistors
STF40NF20 THT N channel transistors
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.21 EUR |
| 19+ | 3.76 EUR |
| 50+ | 2.42 EUR |
| STF45N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 40W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 40W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 82 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.49 EUR |
| 10+ | 7.16 EUR |
| STF4N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 94 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.96 EUR |
| 64+ | 1.13 EUR |
| 76+ | 0.94 EUR |
| 100+ | 0.92 EUR |
| STF4N90K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 16A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 20W
Gate charge: 5.3nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 16A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 20W
Gate charge: 5.3nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.55 EUR |
| 41+ | 1.77 EUR |
| 50+ | 1.44 EUR |
| 54+ | 1.33 EUR |
| STF5NK100Z |
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Hersteller: STMicroelectronics
STF5NK100Z THT N channel transistors
STF5NK100Z THT N channel transistors
auf Bestellung 628 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.45 EUR |
| 53+ | 1.36 EUR |
| 56+ | 1.29 EUR |
| STF6N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 20W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 20W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 2.97 EUR |
| 25+ | 2.86 EUR |
| 50+ | 1.43 EUR |
| STF6N90K5 |
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Hersteller: STMicroelectronics
STF6N90K5 THT N channel transistors
STF6N90K5 THT N channel transistors
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.32 EUR |
| 45+ | 1.6 EUR |
| 48+ | 1.5 EUR |
| 100+ | 1.46 EUR |
| STF6N95K5 |
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Hersteller: STMicroelectronics
STF6N95K5 THT N channel transistors
STF6N95K5 THT N channel transistors
auf Bestellung 47 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.52 EUR |
| 40+ | 1.79 EUR |
| 43+ | 1.69 EUR |
| STF7N105K5 |
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Hersteller: STMicroelectronics
STF7N105K5 THT N channel transistors
STF7N105K5 THT N channel transistors
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.52 EUR |
| 34+ | 2.14 EUR |
| 36+ | 2.03 EUR |
| STF80N1K1K6 |
Hersteller: STMicroelectronics
STF80N1K1K6 THT N channel transistors
STF80N1K1K6 THT N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 1.99 EUR |
| 55+ | 1.3 EUR |
| 59+ | 1.23 EUR |
| STF80N340K6 |
Hersteller: STMicroelectronics
STF80N340K6 THT N channel transistors
STF80N340K6 THT N channel transistors
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.83 EUR |
| 23+ | 3.17 EUR |
| 24+ | 2.99 EUR |
| STF80N450K6 |
Hersteller: STMicroelectronics
STF80N450K6 THT N channel transistors
STF80N450K6 THT N channel transistors
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.5 EUR |
| 25+ | 2.95 EUR |
| 26+ | 2.79 EUR |
| STF80N900K6 |
Hersteller: STMicroelectronics
STF80N900K6 THT N channel transistors
STF80N900K6 THT N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| STF8N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 4.4A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 4.4A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.4 EUR |
| 24+ | 3 EUR |
| 27+ | 2.7 EUR |
| 50+ | 2.52 EUR |
| 100+ | 2.39 EUR |
| 250+ | 2.04 EUR |
| STF8N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 16.5nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 16.5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 175 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.42 EUR |
| 50+ | 1.93 EUR |
| STF8NK100Z |
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Hersteller: STMicroelectronics
STF8NK100Z THT N channel transistors
STF8NK100Z THT N channel transistors
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.38 EUR |
| 34+ | 2.14 EUR |
| 36+ | 2.03 EUR |
| STF8NM50N |
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Hersteller: STMicroelectronics
STF8NM50N THT N channel transistors
STF8NM50N THT N channel transistors
auf Bestellung 198 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.93 EUR |
| 93+ | 0.77 EUR |
| 98+ | 0.73 EUR |
| STF9N60M2 |
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Hersteller: STMicroelectronics
STF9N60M2 THT N channel transistors
STF9N60M2 THT N channel transistors
auf Bestellung 140 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.77 EUR |
| 84+ | 0.86 EUR |
| 89+ | 0.81 EUR |
| 1000+ | 0.8 EUR |
| STF9NK90Z |
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Hersteller: STMicroelectronics
STF9NK90Z THT N channel transistors
STF9NK90Z THT N channel transistors
auf Bestellung 118 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.63 EUR |
| 55+ | 1.3 EUR |
| 59+ | 1.23 EUR |
| STFW1N105K3 |
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Hersteller: STMicroelectronics
STFW1N105K3 THT N channel transistors
STFW1N105K3 THT N channel transistors
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.26 EUR |
| 34+ | 2.15 EUR |
| 36+ | 2.03 EUR |
| STFW3N150 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 63W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 63W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 91 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.13 EUR |
| 19+ | 3.83 EUR |
| STFW4N150 |
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Hersteller: STMicroelectronics
STFW4N150 THT N channel transistors
STFW4N150 THT N channel transistors
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.35 EUR |
| 12+ | 6.01 EUR |
| 13+ | 5.68 EUR |
| 30+ | 5.52 EUR |
| STG3157CTR |
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Hersteller: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.65÷5.5VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Case: SOT323-6L
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Interface: GPIO
Number of channels: 1
Anzahl je Verpackung: 1 Stücke
Category: Interfaces others - integrated circuits
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.65÷5.5VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Case: SOT323-6L
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Interface: GPIO
Number of channels: 1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8816 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 200+ | 0.36 EUR |
| 211+ | 0.34 EUR |
| 230+ | 0.31 EUR |
| 250+ | 0.29 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.26 EUR |
| STG719STR |
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Hersteller: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.8÷5.5VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Case: SOT23-6
Supply voltage: 1.8...5.5V DC
Mounting: SMD
Interface: GPIO
Number of channels: 1
Anzahl je Verpackung: 1 Stücke
Category: Interfaces others - integrated circuits
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.8÷5.5VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Case: SOT23-6
Supply voltage: 1.8...5.5V DC
Mounting: SMD
Interface: GPIO
Number of channels: 1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2637 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 79+ | 0.92 EUR |
| 113+ | 0.64 EUR |
| 121+ | 0.59 EUR |
| 137+ | 0.52 EUR |
| 250+ | 0.48 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.44 EUR |
| STGB10NB37LZT4 |
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Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems; ESD
Type of transistor: IGBT
Collector-emitter voltage: 440V
Collector current: 20A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: ignition systems
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems; ESD
Type of transistor: IGBT
Collector-emitter voltage: 440V
Collector current: 20A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: ignition systems
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 732 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.7 EUR |
| 23+ | 3.13 EUR |
| 50+ | 2.45 EUR |
| 100+ | 2.16 EUR |
| 250+ | 1.79 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.36 EUR |
| STGB10NC60HDT4 |
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Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 750 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.93 EUR |
| 31+ | 2.37 EUR |
| 35+ | 2.07 EUR |
| 100+ | 1.34 EUR |
| STGB19NC60HDT4 |
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Hersteller: STMicroelectronics
STGB19NC60HDT4 SMD IGBT transistors
STGB19NC60HDT4 SMD IGBT transistors
auf Bestellung 957 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.82 EUR |
| 46+ | 1.59 EUR |
| 48+ | 1.5 EUR |
| STGD10NC60KDT4 |
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Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 62W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 62W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 62W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 62W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1896 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.6 EUR |
| 50+ | 1.43 EUR |
| 56+ | 1.29 EUR |
| 100+ | 1.19 EUR |
| STGD5H60DF |
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Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 83W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 83W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 83W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 83W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2305 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 1.54 EUR |
| 73+ | 0.98 EUR |
| 96+ | 0.75 EUR |
| 108+ | 0.67 EUR |
| 200+ | 0.64 EUR |
| STGD5NB120SZT4 |
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Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 5A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 5A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 10A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 5A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 5A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 10A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2423 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.76 EUR |
| 41+ | 1.77 EUR |
| 100+ | 1.23 EUR |
| 250+ | 1.19 EUR |
| STGD6NC60H-1 |
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Hersteller: STMicroelectronics
STGD6NC60H-1 SMD IGBT transistors
STGD6NC60H-1 SMD IGBT transistors
auf Bestellung 126 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 79+ | 0.92 EUR |
| 84+ | 0.86 EUR |
| 2400+ | 0.84 EUR |
| STGD6NC60HDT4 |
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Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 56W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 56W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 56W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 56W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1788 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.36 EUR |
| 59+ | 1.22 EUR |
| 67+ | 1.07 EUR |
| 100+ | 0.97 EUR |
| 500+ | 0.9 EUR |
| STGD7NB60ST4 |
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Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 55W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 55W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 55W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 55W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2078 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.3 EUR |
| 39+ | 1.86 EUR |
| 42+ | 1.73 EUR |
| 50+ | 1.62 EUR |
| 100+ | 1.53 EUR |
| 250+ | 1.5 EUR |






















