Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (171294) > Seite 1237 nach 2855
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STP34NM60ND | STMicroelectronics |
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Produkt ist nicht verfügbar |
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STP35N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Power dissipation: 210W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP35N60M2-EP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 70A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.13Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 70A Gate charge: 41nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STP35N65DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 250W Gate charge: 56.3nC Gate-source voltage: ±25V Pulsed drain current: 90A Drain current: 20A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STP36N60M6 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP36NF06L | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 21A; 70W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±18V On-state resistance: 50mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 546 Stücke: Lieferzeit 7-14 Tag (e) |
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STP38N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 120A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 95mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STP3LN80K5 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP3N150 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3 Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 1.6A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 55 Stücke: Lieferzeit 7-14 Tag (e) |
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STP3N80K5 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STP3NK50Z | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP3NK60Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 45W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.51A Power dissipation: 45W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 230 Stücke: Lieferzeit 7-14 Tag (e) |
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STP3NK60ZFP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 20W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.51A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 129 Stücke: Lieferzeit 7-14 Tag (e) |
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STP3NK80Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 253 Stücke: Lieferzeit 7-14 Tag (e) |
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STP3NK90Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 90W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.89A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 97 Stücke: Lieferzeit 7-14 Tag (e) |
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STP3NK90ZFP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.89A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 333 Stücke: Lieferzeit 7-14 Tag (e) |
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STP40N65M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 20A; Idm: 128A Type of transistor: N-MOSFET Power dissipation: 250W Case: TO220-3 Mounting: THT Gate charge: 56.5nC Kind of package: tube Polarisation: unipolar Drain current: 20A Drain-source voltage: 650V Technology: MDmesh™ M2 Kind of channel: enhancement Gate-source voltage: ±25V On-state resistance: 99mΩ Pulsed drain current: 128A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STP40NF03L | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP40NF10 | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 35A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 150W Case: TO220-3 Mounting: THT Kind of package: tube Drain-source voltage: 100V Drain current: 35A On-state resistance: 28mΩ Technology: STripFET™ II Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 145 Stücke: Lieferzeit 7-14 Tag (e) |
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STP40NF10L | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 150W Case: TO220-3 Mounting: THT Kind of package: tube Drain-source voltage: 100V Drain current: 25A On-state resistance: 36mΩ Technology: STripFET™ Kind of channel: enhancement Gate-source voltage: ±17V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 154 Stücke: Lieferzeit 7-14 Tag (e) |
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STP40NF20 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Drain-source voltage: 200V Drain current: 25A On-state resistance: 45mΩ Technology: STripFET™ Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 67 Stücke: Lieferzeit 7-14 Tag (e) |
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STP42N60M2-EP | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP42N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ V Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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STP43N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 136A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STP45N10F7 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STP45N40DM2AG | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP45N60DM2AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 136A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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STP45N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 95A Power dissipation: 210W Case: TO220-3 On-state resistance: 99mΩ Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 47 Stücke: Lieferzeit 7-14 Tag (e) |
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STP45N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 210W Version: ESD Gate-source voltage: ±25V Drain current: 22A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 42 Stücke: Lieferzeit 7-14 Tag (e) |
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STP45NF06 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 26A; 80W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 26A Power dissipation: 80W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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STP46N60M6 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STP46NF30 | STMicroelectronics |
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Produkt ist nicht verfügbar |
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STP4CMPQTR | STMicroelectronics |
![]() Description: IC: driver; LED driver; QFN20; 2.5÷30mA; Ch: 4; 2.7÷5.5VDC; 30MHz Type of integrated circuit: driver Kind of package: reel; tape Case: QFN20 Mounting: SMD Operating temperature: -40...85°C Output current: 2.5...30mA Number of channels: 4 Input voltage: 2.7...5.5V DC Kind of integrated circuit: LED driver Frequency: 30MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP4N150 | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO220-3 Mounting: THT Drain current: 2.5A On-state resistance: 7Ω Type of transistor: N-MOSFET Power dissipation: 160W Polarisation: unipolar Kind of package: tube Technology: PowerMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Case: TO220-3 Drain-source voltage: 1.5kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 116 Stücke: Lieferzeit 7-14 Tag (e) |
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STP4N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP4N90K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 1.9A; Idm: 12A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.9A Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 12A Power dissipation: 60W Gate charge: 5.3nC Technology: MDmesh™ K5 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP4NK60Z | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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STP4NK60ZFP | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 119 Stücke: Lieferzeit 7-14 Tag (e) |
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STP4NK80Z | STMicroelectronics |
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auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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STP4NK80ZFP | STMicroelectronics |
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auf Bestellung 49 Stücke: Lieferzeit 7-14 Tag (e) |
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STP50N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 137A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 137A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 55nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP50N65DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 120A; 250W; TO220-3 Type of transistor: N-MOSFET Power dissipation: 250W Case: TO220-3 Mounting: THT Gate charge: 52.5nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: 120A Drain-source voltage: 650V Drain current: 33A On-state resistance: 91mΩ Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
STP50NF25 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™; unipolar; 250V; 28A; Idm: 180A Type of transistor: N-MOSFET Technology: STripFET™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 28A Pulsed drain current: 180A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 69mΩ Mounting: THT Gate charge: 68.2nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP55NF06 | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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STP55NF06FP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 30W; ESD Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 305 Stücke: Lieferzeit 7-14 Tag (e) |
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STP55NF06L | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 39A; 95W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Power dissipation: 95W Case: TO220-3 Gate-source voltage: ±16V On-state resistance: 18mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 291 Stücke: Lieferzeit 7-14 Tag (e) |
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STP57N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26.5A Pulsed drain current: 168A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 63mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ M5 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP5N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 2.2A; Idm: 14A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.2A Pulsed drain current: 14A Power dissipation: 45W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 1.4Ω Mounting: THT Gate charge: 8nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP5N80K5 | STMicroelectronics |
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auf Bestellung 65 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5N95K5 | STMicroelectronics |
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Produkt ist nicht verfügbar |
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STP5NK100Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1000V; 2.2A; 125W; TO220-3; ESD Mounting: THT Case: TO220-3 Power dissipation: 125W Polarisation: unipolar Kind of package: tube Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Drain-source voltage: 1kV Drain current: 2.2A On-state resistance: 3.7Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 463 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK50Z | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.7A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 42 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK50ZFP | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.7A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 149 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK52ZD | STMicroelectronics |
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auf Bestellung 165 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK60Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.16A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 34nC Pulsed drain current: 20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 195 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK80Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 110W; TO220-3; ESD Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.4Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 311 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK80ZFP | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.4Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 456 Stücke: Lieferzeit 7-14 Tag (e) |
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STP60NF06 | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 165 Stücke: Lieferzeit 7-14 Tag (e) |
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STP60NF06L | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±15V On-state resistance: 14mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 835 Stücke: Lieferzeit 7-14 Tag (e) |
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STP60NF10 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 66A; 300W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 100V Drain current: 66A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
STP34NM60ND |
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Hersteller: STMicroelectronics
STP34NM60ND THT N channel transistors
STP34NM60ND THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP35N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP35N60M2-EP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 70A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 70A
Gate charge: 41nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 70A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 70A
Gate charge: 41nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP35N65DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 250W
Gate charge: 56.3nC
Gate-source voltage: ±25V
Pulsed drain current: 90A
Drain current: 20A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 250W
Gate charge: 56.3nC
Gate-source voltage: ±25V
Pulsed drain current: 90A
Drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP36N60M6 |
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Hersteller: STMicroelectronics
STP36N60M6 THT N channel transistors
STP36N60M6 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP36NF06L | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 21A; 70W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±18V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 21A; 70W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±18V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 546 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.52 EUR |
57+ | 1.26 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
500+ | 0.9 EUR |
STP38N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 120A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 120A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP3LN80K5 |
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Hersteller: STMicroelectronics
STP3LN80K5 THT N channel transistors
STP3LN80K5 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP3N150 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.76 EUR |
16+ | 4.62 EUR |
17+ | 4.38 EUR |
50+ | 4.35 EUR |
100+ | 4.2 EUR |
STP3N80K5 |
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Hersteller: STMicroelectronics
STP3N80K5 THT N channel transistors
STP3N80K5 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP3NK50Z |
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Hersteller: STMicroelectronics
STP3NK50Z THT N channel transistors
STP3NK50Z THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP3NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 45W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 45W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 230 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.59 EUR |
85+ | 0.85 EUR |
133+ | 0.54 EUR |
141+ | 0.51 EUR |
2500+ | 0.5 EUR |
STP3NK60ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 20W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 20W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 129 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.37 EUR |
88+ | 0.81 EUR |
112+ | 0.64 EUR |
119+ | 0.6 EUR |
STP3NK80Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 253 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.47 EUR |
70+ | 1.03 EUR |
130+ | 0.55 EUR |
138+ | 0.52 EUR |
STP3NK90Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 90W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.89A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 90W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.89A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 97 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.43 EUR |
43+ | 1.67 EUR |
97+ | 0.74 EUR |
STP3NK90ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 333 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
58+ | 1.24 EUR |
61+ | 1.19 EUR |
66+ | 1.09 EUR |
104+ | 0.69 EUR |
110+ | 0.65 EUR |
STP40N65M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 20A; Idm: 128A
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO220-3
Mounting: THT
Gate charge: 56.5nC
Kind of package: tube
Polarisation: unipolar
Drain current: 20A
Drain-source voltage: 650V
Technology: MDmesh™ M2
Kind of channel: enhancement
Gate-source voltage: ±25V
On-state resistance: 99mΩ
Pulsed drain current: 128A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 20A; Idm: 128A
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO220-3
Mounting: THT
Gate charge: 56.5nC
Kind of package: tube
Polarisation: unipolar
Drain current: 20A
Drain-source voltage: 650V
Technology: MDmesh™ M2
Kind of channel: enhancement
Gate-source voltage: ±25V
On-state resistance: 99mΩ
Pulsed drain current: 128A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP40NF03L |
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Hersteller: STMicroelectronics
STP40NF03L THT N channel transistors
STP40NF03L THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP40NF10 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 35A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 100V
Drain current: 35A
On-state resistance: 28mΩ
Technology: STripFET™ II
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 35A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 100V
Drain current: 35A
On-state resistance: 28mΩ
Technology: STripFET™ II
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 145 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.92 EUR |
50+ | 1.43 EUR |
87+ | 0.83 EUR |
93+ | 0.77 EUR |
STP40NF10L |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Technology: STripFET™
Kind of channel: enhancement
Gate-source voltage: ±17V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Technology: STripFET™
Kind of channel: enhancement
Gate-source voltage: ±17V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 154 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.17 EUR |
33+ | 2.17 EUR |
85+ | 0.84 EUR |
90+ | 0.8 EUR |
STP40NF20 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 45mΩ
Technology: STripFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 45mΩ
Technology: STripFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.65 EUR |
18+ | 4.19 EUR |
23+ | 3.2 EUR |
24+ | 3.03 EUR |
STP42N60M2-EP |
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Hersteller: STMicroelectronics
STP42N60M2-EP THT N channel transistors
STP42N60M2-EP THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP42N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ V
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ V
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.62 EUR |
7+ | 10.68 EUR |
250+ | 10.37 EUR |
STP43N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP45N10F7 |
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Hersteller: STMicroelectronics
STP45N10F7 THT N channel transistors
STP45N10F7 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP45N40DM2AG |
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Hersteller: STMicroelectronics
STP45N40DM2AG THT N channel transistors
STP45N40DM2AG THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP45N60DM2AG |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
3+ | 23.84 EUR |
8+ | 8.94 EUR |
STP45N60DM6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 95A
Power dissipation: 210W
Case: TO220-3
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 95A
Power dissipation: 210W
Case: TO220-3
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 47 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.59 EUR |
13+ | 5.59 EUR |
100+ | 5.45 EUR |
STP45N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 210W
Version: ESD
Gate-source voltage: ±25V
Drain current: 22A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 210W
Version: ESD
Gate-source voltage: ±25V
Drain current: 22A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.37 EUR |
10+ | 7.52 EUR |
11+ | 7.11 EUR |
50+ | 7.08 EUR |
100+ | 6.84 EUR |
STP45NF06 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 26A; 80W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 80W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 26A; 80W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 80W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
10+ | 7.15 EUR |
27+ | 2.65 EUR |
74+ | 0.97 EUR |
STP46N60M6 |
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Hersteller: STMicroelectronics
STP46N60M6 THT N channel transistors
STP46N60M6 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP46NF30 |
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Hersteller: STMicroelectronics
STP46NF30 THT N channel transistors
STP46NF30 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP4CMPQTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; QFN20; 2.5÷30mA; Ch: 4; 2.7÷5.5VDC; 30MHz
Type of integrated circuit: driver
Kind of package: reel; tape
Case: QFN20
Mounting: SMD
Operating temperature: -40...85°C
Output current: 2.5...30mA
Number of channels: 4
Input voltage: 2.7...5.5V DC
Kind of integrated circuit: LED driver
Frequency: 30MHz
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; LED driver; QFN20; 2.5÷30mA; Ch: 4; 2.7÷5.5VDC; 30MHz
Type of integrated circuit: driver
Kind of package: reel; tape
Case: QFN20
Mounting: SMD
Operating temperature: -40...85°C
Output current: 2.5...30mA
Number of channels: 4
Input voltage: 2.7...5.5V DC
Kind of integrated circuit: LED driver
Frequency: 30MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP4N150 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO220-3
Mounting: THT
Drain current: 2.5A
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Technology: PowerMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO220-3
Drain-source voltage: 1.5kV
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO220-3
Mounting: THT
Drain current: 2.5A
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Technology: PowerMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO220-3
Drain-source voltage: 1.5kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 116 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.37 EUR |
10+ | 7.26 EUR |
STP4N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP4N90K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 1.9A; Idm: 12A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.9A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Power dissipation: 60W
Gate charge: 5.3nC
Technology: MDmesh™ K5
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 1.9A; Idm: 12A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.9A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Power dissipation: 60W
Gate charge: 5.3nC
Technology: MDmesh™ K5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP4NK60Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.79 EUR |
63+ | 1.13 EUR |
500+ | 0.69 EUR |
1500+ | 0.67 EUR |
STP4NK60ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 119 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.52 EUR |
55+ | 1.3 EUR |
76+ | 0.94 EUR |
81+ | 0.89 EUR |
STP4NK80Z | ![]() |
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Hersteller: STMicroelectronics
STP4NK80Z THT N channel transistors
STP4NK80Z THT N channel transistors
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.56 EUR |
55+ | 1.3 EUR |
250+ | 0.82 EUR |
STP4NK80ZFP |
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Hersteller: STMicroelectronics
STP4NK80ZFP THT N channel transistors
STP4NK80ZFP THT N channel transistors
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.46 EUR |
51+ | 1.4 EUR |
250+ | 0.92 EUR |
STP50N60DM6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 137A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 137A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 137A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 137A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP50N65DM6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 120A; 250W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO220-3
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 120A
Drain-source voltage: 650V
Drain current: 33A
On-state resistance: 91mΩ
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 120A; 250W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO220-3
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 120A
Drain-source voltage: 650V
Drain current: 33A
On-state resistance: 91mΩ
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP50NF25 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 250V; 28A; Idm: 180A
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 28A
Pulsed drain current: 180A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 68.2nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 250V; 28A; Idm: 180A
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 28A
Pulsed drain current: 180A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 68.2nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP55NF06 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
62+ | 1.16 EUR |
75+ | 0.96 EUR |
80+ | 0.89 EUR |
STP55NF06FP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 30W; ESD
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 30W; ESD
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 305 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.16 EUR |
43+ | 1.7 EUR |
50+ | 1.43 EUR |
107+ | 0.67 EUR |
114+ | 0.63 EUR |
STP55NF06L |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 39A; 95W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Power dissipation: 95W
Case: TO220-3
Gate-source voltage: ±16V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 39A; 95W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Power dissipation: 95W
Case: TO220-3
Gate-source voltage: ±16V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 291 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.39 EUR |
93+ | 0.77 EUR |
122+ | 0.59 EUR |
129+ | 0.56 EUR |
3750+ | 0.54 EUR |
STP57N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M5
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP5N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Pulsed drain current: 14A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Pulsed drain current: 14A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP5N80K5 |
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Hersteller: STMicroelectronics
STP5N80K5 THT N channel transistors
STP5N80K5 THT N channel transistors
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.32 EUR |
47+ | 1.53 EUR |
50+ | 1.44 EUR |
STP5N95K5 |
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Hersteller: STMicroelectronics
STP5N95K5 THT N channel transistors
STP5N95K5 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP5NK100Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 2.2A; 125W; TO220-3; ESD
Mounting: THT
Case: TO220-3
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Drain current: 2.2A
On-state resistance: 3.7Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 2.2A; 125W; TO220-3; ESD
Mounting: THT
Case: TO220-3
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Drain current: 2.2A
On-state resistance: 3.7Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 463 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.2 EUR |
59+ | 1.23 EUR |
62+ | 1.16 EUR |
STP5NK50Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
42+ | 1.7 EUR |
68+ | 1.06 EUR |
1000+ | 0.62 EUR |
STP5NK50ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 149 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 3.05 EUR |
44+ | 1.64 EUR |
97+ | 0.74 EUR |
103+ | 0.7 EUR |
STP5NK52ZD |
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Hersteller: STMicroelectronics
STP5NK52ZD THT N channel transistors
STP5NK52ZD THT N channel transistors
auf Bestellung 165 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
70+ | 1.03 EUR |
117+ | 0.61 EUR |
125+ | 0.57 EUR |
STP5NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 195 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
75+ | 0.96 EUR |
82+ | 0.87 EUR |
107+ | 0.67 EUR |
114+ | 0.63 EUR |
1000+ | 0.62 EUR |
STP5NK80Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 311 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.33 EUR |
51+ | 1.42 EUR |
82+ | 0.87 EUR |
87+ | 0.83 EUR |
STP5NK80ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 456 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.75 EUR |
34+ | 2.13 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
1000+ | 0.92 EUR |
3000+ | 0.89 EUR |
STP60NF06 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 165 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.85 EUR |
66+ | 1.09 EUR |
104+ | 0.69 EUR |
110+ | 0.65 EUR |
STP60NF06L |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±15V
On-state resistance: 14mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±15V
On-state resistance: 14mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 835 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.46 EUR |
62+ | 1.16 EUR |
107+ | 0.67 EUR |
114+ | 0.63 EUR |
STP60NF10 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 66A; 300W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 66A; 300W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH