Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (171327) > Seite 1238 nach 2856
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STP60NF10 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 66A; 300W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 100V Drain current: 66A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
STP65N045M9 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 35A; Idm: 170A Type of transistor: N-MOSFET Technology: MDmesh™ M9 Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Pulsed drain current: 170A Power dissipation: 245W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
STP65N150M9 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A Type of transistor: N-MOSFET Technology: MDmesh™ M9 Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.5A Pulsed drain current: 60A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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STP6N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 60W Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.9A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 89 Stücke: Lieferzeit 7-14 Tag (e) |
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STP6N62K3 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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STP6N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 2.8A; Idm: 18A Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.8A Pulsed drain current: 18A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
STP6N90K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 4A; Idm: 24A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Pulsed drain current: 24A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.1Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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STP6N95K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 6A; 90W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 6A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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STP6NK60Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.8A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 133 Stücke: Lieferzeit 7-14 Tag (e) |
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STP6NK60ZFP | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220FP; ESD Case: TO220FP Mounting: THT Kind of package: tube Power dissipation: 110W Polarisation: unipolar Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 3.8A On-state resistance: 1.2Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 368 Stücke: Lieferzeit 7-14 Tag (e) |
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STP6NK90Z | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 140W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.65A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 66 Stücke: Lieferzeit 7-14 Tag (e) |
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STP6NK90ZFP | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.65A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 299 Stücke: Lieferzeit 7-14 Tag (e) |
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STP75NF20 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 47A; 190W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 47A Case: TO220-3 On-state resistance: 34mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 190W Technology: STripFET™ Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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STP75NF75 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 75V; 70A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 70A Case: TO220-3 On-state resistance: 11mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 300W Technology: STripFET™ II Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 328 Stücke: Lieferzeit 7-14 Tag (e) |
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STP7N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 20A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.95Ω Mounting: THT Gate charge: 8.8nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STP7N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 6A; 110W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: SuperMESH5™ Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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STP7N95K3 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 950V; 4.5A; 150W; ESD Type of transistor: N-MOSFET Technology: SuperMESH3™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 4.5A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 92 Stücke: Lieferzeit 7-14 Tag (e) |
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STP7NK40Z | STMicroelectronics |
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auf Bestellung 72 Stücke: Lieferzeit 7-14 Tag (e) |
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STP7NK80Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.3A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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STP7NK80ZFP | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.3A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 190 Stücke: Lieferzeit 7-14 Tag (e) |
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STP80N1K1K6 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
STP80N240K6 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
STP80N340K6 | STMicroelectronics | STP80N340K6 THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
STP80N450K6 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
STP80N600K6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 15A; 86W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Pulsed drain current: 15A Power dissipation: 86W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 10.7nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
STP80N900K6 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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STP80NF03L-04 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 30V; 80A; 300W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 169 Stücke: Lieferzeit 7-14 Tag (e) |
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STP80NF10 | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 300W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 54 Stücke: Lieferzeit 7-14 Tag (e) |
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STP80NF10FP | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 27A; 45W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 27A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: STripFET™ II Anzahl je Verpackung: 1 Stücke |
auf Bestellung 120 Stücke: Lieferzeit 7-14 Tag (e) |
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STP80NF12 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 120V; 60A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 60A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: STripFET™ II Anzahl je Verpackung: 1 Stücke |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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STP80NF55-06 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: STripFET™ II Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STP80NF55-08 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 320A; 300W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Pulsed drain current: 320A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 155 Stücke: Lieferzeit 7-14 Tag (e) |
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STP8N120K5 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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STP8NK100Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 160W; TO220-3; ESD Mounting: THT Case: TO220-3 Power dissipation: 160W Polarisation: unipolar Kind of package: tube Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Drain-source voltage: 1kV Drain current: 4.3A On-state resistance: 1.85Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 56 Stücke: Lieferzeit 7-14 Tag (e) |
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STP8NK80Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD Technology: SuperMesh™ Drain-source voltage: 800V Drain current: 3.9A On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Kind of package: tube Version: ESD Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Case: TO220-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 444 Stücke: Lieferzeit 7-14 Tag (e) |
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STP8NK80ZFP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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STP8NM50N | STMicroelectronics |
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auf Bestellung 94 Stücke: Lieferzeit 7-14 Tag (e) |
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STP9NK50Z | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 7.2A; 110W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.2A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 437 Stücke: Lieferzeit 7-14 Tag (e) |
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STP9NK50ZFP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 7.2A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.2A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 73 Stücke: Lieferzeit 7-14 Tag (e) |
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STP9NK60Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; TO220-3; ESD Type of transistor: N-MOSFET Case: TO220-3 Drain-source voltage: 600V Drain current: 4.4A On-state resistance: 0.95Ω Power dissipation: 125W Polarisation: unipolar Kind of package: tube Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 397 Stücke: Lieferzeit 7-14 Tag (e) |
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STP9NK60ZFP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Case: TO220FP Drain-source voltage: 600V Drain current: 4.4A On-state resistance: 0.95Ω Power dissipation: 30W Polarisation: unipolar Kind of package: tube Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 63 Stücke: Lieferzeit 7-14 Tag (e) |
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STP9NK65Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 125W Type of transistor: N-MOSFET Case: TO220-3 Drain-source voltage: 650V Drain current: 6.4A On-state resistance: 1.2Ω Power dissipation: 125W Polarisation: unipolar Kind of package: tube Gate charge: 41nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 25.6A Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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STP9NK65ZFP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 30W; TO220FP Type of transistor: N-MOSFET Case: TO220FP Drain-source voltage: 650V Drain current: 6.4A On-state resistance: 1.2Ω Power dissipation: 30W Polarisation: unipolar Kind of package: tube Gate charge: 41nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 25.6A Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STP9NK70ZFP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 35W; TO220FP; ESD Type of transistor: N-MOSFET Case: TO220FP Drain-source voltage: 700V Drain current: 4.7A On-state resistance: 1.2Ω Power dissipation: 35W Polarisation: unipolar Kind of package: tube Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STP9NK90Z | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO220-3; ESD Type of transistor: N-MOSFET Case: TO220-3 Drain-source voltage: 900V Drain current: 5A On-state resistance: 1.3Ω Power dissipation: 160W Polarisation: unipolar Kind of package: tube Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 244 Stücke: Lieferzeit 7-14 Tag (e) |
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STPIC6C595MTR | STMicroelectronics |
![]() Description: IC: peripheral circuit; 8bit,shift register; SMD; SO16; 3.3÷5VDC Type of integrated circuit: peripheral circuit Kind of integrated circuit: 8bit; shift register Mounting: SMD Case: SO16 Supply voltage: 3.3...5V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: open drain Number of outputs: 8 On-state resistance: 4Ω Output current: 0.1A Application: automotive LED drivers Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4647 Stücke: Lieferzeit 7-14 Tag (e) |
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STPIC6C595TTR | STMicroelectronics |
![]() Description: IC: peripheral circuit; 8bit,shift register; SMD; TSSOP16; OUT: 8 Type of integrated circuit: peripheral circuit Kind of integrated circuit: 8bit; shift register Mounting: SMD Case: TSSOP16 Supply voltage: 3.3...5V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: open drain Number of outputs: 8 On-state resistance: 4Ω Output current: 0.1A Application: automotive LED drivers Anzahl je Verpackung: 1 Stücke |
auf Bestellung 334 Stücke: Lieferzeit 7-14 Tag (e) |
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STPM01FTR | STMicroelectronics |
![]() Description: IC: electric energy meter; SPI; Network: single-phase; TSSOP20 Type of integrated circuit: electric energy meter Interface: SPI Kind of network: single-phase Case: TSSOP20 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 3...5.5V DC Number of channels: 2 Measurement accuracy: 0.1% Integrated circuit features: delta-sigma; tamper detection Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STPM32TR | STMicroelectronics |
![]() Description: IC: electric energy meter; SPI,UART; Network: single-phase; QFN24 Type of integrated circuit: electric energy meter Interface: SPI; UART Kind of network: single-phase Case: QFN24 Mounting: SMD Operating temperature: -40...105°C Supply voltage: 2.95...3.65V DC DC supply current: 3.9mA Number of channels: 2 Measurement accuracy: 0.1% Integrated circuit features: delta-sigma Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
STPM34TR | STMicroelectronics |
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Produkt ist nicht verfügbar |
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STPMIC1APQR | STMicroelectronics |
![]() Description: IC: PMIC; POL converter; I2C; WFQFN44; -40÷105°C; reel,tape; 95% Type of integrated circuit: PMIC Kind of integrated circuit: POL converter Interface: I2C Case: WFQFN44 Mounting: SMD Operating temperature: -40...105°C Frequency: 2MHz Kind of package: reel; tape Application: CPU/GPU power supply; for DDR memories Output current: 2A Number of channels: 14 Output voltage: 0.6...3.9V Input voltage: 2.8...5.5V Integrated circuit features: user programmable non-volatile memory (NVM) Efficiency: 95% Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
STPMIC1BPQR | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
STPMIC1CPQR | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
STPMIC1DPQR | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
STPMIC1EPQR | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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STPS0520Z | STMicroelectronics |
![]() Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape Case: SOD123 Max. off-state voltage: 20V Max. load current: 2A Max. forward voltage: 0.32V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A Kind of package: reel; tape Type of diode: Schottky switching Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7217 Stücke: Lieferzeit 7-14 Tag (e) |
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STPS0530Z | STMicroelectronics |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.33V Max. load current: 2A Max. forward impulse current: 5.5A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1040 Stücke: Lieferzeit 7-14 Tag (e) |
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STPS0540Z | STMicroelectronics |
![]() Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.4V Max. load current: 2A Max. forward impulse current: 5.5A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5085 Stücke: Lieferzeit 7-14 Tag (e) |
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STPS0540ZY | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
STPS0560Z | STMicroelectronics |
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auf Bestellung 3240 Stücke: Lieferzeit 7-14 Tag (e) |
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STP60NF10 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 66A; 300W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 66A; 300W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP65N045M9 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 35A; Idm: 170A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 170A
Power dissipation: 245W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 35A; Idm: 170A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 170A
Power dissipation: 245W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP65N150M9 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP6N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 60W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 60W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 89 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.67 EUR |
49+ | 1.49 EUR |
55+ | 1.32 EUR |
63+ | 1.14 EUR |
66+ | 1.09 EUR |
STP6N62K3 |
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Hersteller: STMicroelectronics
STP6N62K3 THT N channel transistors
STP6N62K3 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP6N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 2.8A; Idm: 18A
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.8A
Pulsed drain current: 18A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 2.8A; Idm: 18A
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.8A
Pulsed drain current: 18A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP6N90K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 4A; Idm: 24A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Pulsed drain current: 24A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 4A; Idm: 24A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Pulsed drain current: 24A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP6N95K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 6A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 6A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 6A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 6A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.72 EUR |
30+ | 2.39 EUR |
250+ | 1.8 EUR |
STP6NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.8A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.8A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 133 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.82 EUR |
65+ | 1.12 EUR |
82+ | 0.87 EUR |
87+ | 0.83 EUR |
STP6NK60ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 110W
Polarisation: unipolar
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 3.8A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 110W
Polarisation: unipolar
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 3.8A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 368 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
47+ | 1.54 EUR |
57+ | 1.26 EUR |
77+ | 0.93 EUR |
82+ | 0.87 EUR |
STP6NK90Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.65A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.65A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 66 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 3.02 EUR |
28+ | 2.63 EUR |
50+ | 1.43 EUR |
53+ | 1.36 EUR |
1000+ | 1.3 EUR |
STP6NK90ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.65A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.65A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 299 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.12 EUR |
33+ | 2.17 EUR |
49+ | 1.47 EUR |
52+ | 1.4 EUR |
STP75NF20 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 47A; 190W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 47A
Case: TO220-3
On-state resistance: 34mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 190W
Technology: STripFET™
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 47A; 190W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 47A
Case: TO220-3
On-state resistance: 34mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 190W
Technology: STripFET™
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.22 EUR |
16+ | 4.7 EUR |
20+ | 3.6 EUR |
22+ | 3.4 EUR |
STP75NF75 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 75V; 70A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Case: TO220-3
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 300W
Technology: STripFET™ II
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 75V; 70A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Case: TO220-3
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 300W
Technology: STripFET™ II
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 328 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.93 EUR |
41+ | 1.77 EUR |
63+ | 1.14 EUR |
67+ | 1.07 EUR |
STP7N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP7N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 6A; 110W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SuperMESH5™
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 6A; 110W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SuperMESH5™
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.51 EUR |
25+ | 2.86 EUR |
STP7N95K3 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 950V; 4.5A; 150W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 4.5A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 950V; 4.5A; 150W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 4.5A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.15 EUR |
37+ | 1.94 EUR |
39+ | 1.84 EUR |
500+ | 1.82 EUR |
STP7NK40Z | ![]() |
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Hersteller: STMicroelectronics
STP7NK40Z THT N channel transistors
STP7NK40Z THT N channel transistors
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
56+ | 1.29 EUR |
72+ | 0.99 EUR |
250+ | 0.7 EUR |
STP7NK80Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.3A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.3A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.23 EUR |
35+ | 2.09 EUR |
40+ | 1.79 EUR |
STP7NK80ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.3A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.3A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.93 EUR |
41+ | 1.74 EUR |
42+ | 1.73 EUR |
44+ | 1.64 EUR |
100+ | 1.59 EUR |
STP80N1K1K6 |
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Hersteller: STMicroelectronics
STP80N1K1K6 THT N channel transistors
STP80N1K1K6 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP80N240K6 |
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Hersteller: STMicroelectronics
STP80N240K6 THT N channel transistors
STP80N240K6 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP80N340K6 |
Hersteller: STMicroelectronics
STP80N340K6 THT N channel transistors
STP80N340K6 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP80N450K6 |
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Hersteller: STMicroelectronics
STP80N450K6 THT N channel transistors
STP80N450K6 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP80N600K6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 15A; 86W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 15A
Power dissipation: 86W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 15A; 86W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 15A
Power dissipation: 86W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP80N900K6 |
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Hersteller: STMicroelectronics
STP80N900K6 THT N channel transistors
STP80N900K6 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP80NF03L-04 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 30V; 80A; 300W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 30V; 80A; 300W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 169 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.2 EUR |
36+ | 1.99 EUR |
41+ | 1.76 EUR |
46+ | 1.57 EUR |
49+ | 1.49 EUR |
STP80NF10 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.36 EUR |
40+ | 1.82 EUR |
42+ | 1.72 EUR |
400+ | 1.69 EUR |
1250+ | 1.66 EUR |
STP80NF10FP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 27A; 45W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: STripFET™ II
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 27A; 45W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: STripFET™ II
Anzahl je Verpackung: 1 Stücke
auf Bestellung 120 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.96 EUR |
38+ | 1.93 EUR |
40+ | 1.83 EUR |
500+ | 1.82 EUR |
1000+ | 1.76 EUR |
STP80NF12 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 120V; 60A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 60A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ II
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 120V; 60A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 60A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ II
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.5 EUR |
39+ | 1.84 EUR |
41+ | 1.74 EUR |
500+ | 1.69 EUR |
STP80NF55-06 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ II
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ II
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP80NF55-08 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 320A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 320A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 155 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.42 EUR |
30+ | 2.46 EUR |
31+ | 2.32 EUR |
250+ | 2.23 EUR |
STP8N120K5 |
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Hersteller: STMicroelectronics
STP8N120K5 THT N channel transistors
STP8N120K5 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP8NK100Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 160W; TO220-3; ESD
Mounting: THT
Case: TO220-3
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Drain current: 4.3A
On-state resistance: 1.85Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 160W; TO220-3; ESD
Mounting: THT
Case: TO220-3
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Drain current: 4.3A
On-state resistance: 1.85Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.18 EUR |
36+ | 1.99 EUR |
39+ | 1.87 EUR |
STP8NK80Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Technology: SuperMesh™
Drain-source voltage: 800V
Drain current: 3.9A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Technology: SuperMesh™
Drain-source voltage: 800V
Drain current: 3.9A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 444 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.83 EUR |
44+ | 1.64 EUR |
49+ | 1.47 EUR |
57+ | 1.26 EUR |
61+ | 1.19 EUR |
STP8NK80ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.53 EUR |
22+ | 3.37 EUR |
57+ | 1.26 EUR |
61+ | 1.19 EUR |
STP8NM50N |
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Hersteller: STMicroelectronics
STP8NM50N THT N channel transistors
STP8NM50N THT N channel transistors
auf Bestellung 94 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.19 EUR |
93+ | 0.77 EUR |
94+ | 0.76 EUR |
STP9NK50Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.2A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.2A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.2A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.2A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 437 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.87 EUR |
32+ | 2.26 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
STP9NK50ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.2A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.2A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.87 EUR |
48+ | 1.52 EUR |
73+ | 0.97 EUR |
STP9NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; TO220-3; ESD
Type of transistor: N-MOSFET
Case: TO220-3
Drain-source voltage: 600V
Drain current: 4.4A
On-state resistance: 0.95Ω
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; TO220-3; ESD
Type of transistor: N-MOSFET
Case: TO220-3
Drain-source voltage: 600V
Drain current: 4.4A
On-state resistance: 0.95Ω
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 397 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.2 EUR |
68+ | 1.06 EUR |
72+ | 1 EUR |
STP9NK60ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 600V
Drain current: 4.4A
On-state resistance: 0.95Ω
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 600V
Drain current: 4.4A
On-state resistance: 0.95Ω
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 63 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.9 EUR |
63+ | 1.13 EUR |
1000+ | 0.96 EUR |
2000+ | 0.94 EUR |
STP9NK65Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 125W
Type of transistor: N-MOSFET
Case: TO220-3
Drain-source voltage: 650V
Drain current: 6.4A
On-state resistance: 1.2Ω
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 41nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 25.6A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 125W
Type of transistor: N-MOSFET
Case: TO220-3
Drain-source voltage: 650V
Drain current: 6.4A
On-state resistance: 1.2Ω
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 41nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 25.6A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 5.96 EUR |
17+ | 4.2 EUR |
45+ | 1.59 EUR |
STP9NK65ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 650V
Drain current: 6.4A
On-state resistance: 1.2Ω
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Gate charge: 41nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 25.6A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 650V
Drain current: 6.4A
On-state resistance: 1.2Ω
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Gate charge: 41nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 25.6A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP9NK70ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 700V
Drain current: 4.7A
On-state resistance: 1.2Ω
Power dissipation: 35W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 700V
Drain current: 4.7A
On-state resistance: 1.2Ω
Power dissipation: 35W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP9NK90Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO220-3; ESD
Type of transistor: N-MOSFET
Case: TO220-3
Drain-source voltage: 900V
Drain current: 5A
On-state resistance: 1.3Ω
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO220-3; ESD
Type of transistor: N-MOSFET
Case: TO220-3
Drain-source voltage: 900V
Drain current: 5A
On-state resistance: 1.3Ω
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 244 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.76 EUR |
32+ | 2.26 EUR |
46+ | 1.57 EUR |
49+ | 1.49 EUR |
STPIC6C595MTR |
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Hersteller: STMicroelectronics
Category: Shift registers
Description: IC: peripheral circuit; 8bit,shift register; SMD; SO16; 3.3÷5VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: 8bit; shift register
Mounting: SMD
Case: SO16
Supply voltage: 3.3...5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Number of outputs: 8
On-state resistance: 4Ω
Output current: 0.1A
Application: automotive LED drivers
Anzahl je Verpackung: 1 Stücke
Category: Shift registers
Description: IC: peripheral circuit; 8bit,shift register; SMD; SO16; 3.3÷5VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: 8bit; shift register
Mounting: SMD
Case: SO16
Supply voltage: 3.3...5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Number of outputs: 8
On-state resistance: 4Ω
Output current: 0.1A
Application: automotive LED drivers
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4647 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
58+ | 1.24 EUR |
80+ | 0.9 EUR |
102+ | 0.7 EUR |
108+ | 0.66 EUR |
500+ | 0.64 EUR |
STPIC6C595TTR |
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Hersteller: STMicroelectronics
Category: Shift registers
Description: IC: peripheral circuit; 8bit,shift register; SMD; TSSOP16; OUT: 8
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: 8bit; shift register
Mounting: SMD
Case: TSSOP16
Supply voltage: 3.3...5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Number of outputs: 8
On-state resistance: 4Ω
Output current: 0.1A
Application: automotive LED drivers
Anzahl je Verpackung: 1 Stücke
Category: Shift registers
Description: IC: peripheral circuit; 8bit,shift register; SMD; TSSOP16; OUT: 8
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: 8bit; shift register
Mounting: SMD
Case: TSSOP16
Supply voltage: 3.3...5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Number of outputs: 8
On-state resistance: 4Ω
Output current: 0.1A
Application: automotive LED drivers
Anzahl je Verpackung: 1 Stücke
auf Bestellung 334 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
97+ | 0.74 EUR |
102+ | 0.71 EUR |
135+ | 0.53 EUR |
143+ | 0.5 EUR |
STPM01FTR |
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Hersteller: STMicroelectronics
Category: Integrated circuits - others
Description: IC: electric energy meter; SPI; Network: single-phase; TSSOP20
Type of integrated circuit: electric energy meter
Interface: SPI
Kind of network: single-phase
Case: TSSOP20
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Number of channels: 2
Measurement accuracy: 0.1%
Integrated circuit features: delta-sigma; tamper detection
Anzahl je Verpackung: 2500 Stücke
Category: Integrated circuits - others
Description: IC: electric energy meter; SPI; Network: single-phase; TSSOP20
Type of integrated circuit: electric energy meter
Interface: SPI
Kind of network: single-phase
Case: TSSOP20
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Number of channels: 2
Measurement accuracy: 0.1%
Integrated circuit features: delta-sigma; tamper detection
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STPM32TR |
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Hersteller: STMicroelectronics
Category: Integrated circuits - others
Description: IC: electric energy meter; SPI,UART; Network: single-phase; QFN24
Type of integrated circuit: electric energy meter
Interface: SPI; UART
Kind of network: single-phase
Case: QFN24
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.95...3.65V DC
DC supply current: 3.9mA
Number of channels: 2
Measurement accuracy: 0.1%
Integrated circuit features: delta-sigma
Anzahl je Verpackung: 1 Stücke
Category: Integrated circuits - others
Description: IC: electric energy meter; SPI,UART; Network: single-phase; QFN24
Type of integrated circuit: electric energy meter
Interface: SPI; UART
Kind of network: single-phase
Case: QFN24
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.95...3.65V DC
DC supply current: 3.9mA
Number of channels: 2
Measurement accuracy: 0.1%
Integrated circuit features: delta-sigma
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STPM34TR |
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Hersteller: STMicroelectronics
STPM34TR Integrated circuits - others
STPM34TR Integrated circuits - others
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STPMIC1APQR |
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Hersteller: STMicroelectronics
Category: Integrated circuits - others
Description: IC: PMIC; POL converter; I2C; WFQFN44; -40÷105°C; reel,tape; 95%
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Interface: I2C
Case: WFQFN44
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 2MHz
Kind of package: reel; tape
Application: CPU/GPU power supply; for DDR memories
Output current: 2A
Number of channels: 14
Output voltage: 0.6...3.9V
Input voltage: 2.8...5.5V
Integrated circuit features: user programmable non-volatile memory (NVM)
Efficiency: 95%
Anzahl je Verpackung: 3000 Stücke
Category: Integrated circuits - others
Description: IC: PMIC; POL converter; I2C; WFQFN44; -40÷105°C; reel,tape; 95%
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Interface: I2C
Case: WFQFN44
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 2MHz
Kind of package: reel; tape
Application: CPU/GPU power supply; for DDR memories
Output current: 2A
Number of channels: 14
Output voltage: 0.6...3.9V
Input voltage: 2.8...5.5V
Integrated circuit features: user programmable non-volatile memory (NVM)
Efficiency: 95%
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STPMIC1BPQR |
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Hersteller: STMicroelectronics
STPMIC1BPQR Integrated circuits - others
STPMIC1BPQR Integrated circuits - others
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STPMIC1CPQR |
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Hersteller: STMicroelectronics
STPMIC1CPQR Integrated circuits - others
STPMIC1CPQR Integrated circuits - others
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STPMIC1DPQR |
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Hersteller: STMicroelectronics
STPMIC1DPQR Integrated circuits - others
STPMIC1DPQR Integrated circuits - others
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STPMIC1EPQR |
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Hersteller: STMicroelectronics
STPMIC1EPQR Integrated circuits - others
STPMIC1EPQR Integrated circuits - others
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STPS0520Z |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Case: SOD123
Max. off-state voltage: 20V
Max. load current: 2A
Max. forward voltage: 0.32V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Case: SOD123
Max. off-state voltage: 20V
Max. load current: 2A
Max. forward voltage: 0.32V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7217 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
371+ | 0.19 EUR |
529+ | 0.14 EUR |
619+ | 0.12 EUR |
1583+ | 0.045 EUR |
1673+ | 0.043 EUR |
STPS0530Z |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.33V
Max. load current: 2A
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.33V
Max. load current: 2A
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1040 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
315+ | 0.23 EUR |
475+ | 0.15 EUR |
1040+ | 0.069 EUR |
STPS0540Z |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. load current: 2A
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. load current: 2A
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5085 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
348+ | 0.21 EUR |
413+ | 0.17 EUR |
479+ | 0.15 EUR |
558+ | 0.13 EUR |
1241+ | 0.058 EUR |
1313+ | 0.054 EUR |
STPS0540ZY |
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Hersteller: STMicroelectronics
STPS0540ZY SMD Schottky diodes
STPS0540ZY SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STPS0560Z |
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Hersteller: STMicroelectronics
STPS0560Z SMD Schottky diodes
STPS0560Z SMD Schottky diodes
auf Bestellung 3240 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
172+ | 0.42 EUR |
782+ | 0.092 EUR |
834+ | 0.086 EUR |