Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (171308) > Seite 1234 nach 2856
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STN83003 | STMicroelectronics |
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auf Bestellung 160 Stücke: Lieferzeit 7-14 Tag (e) |
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STN851 | STMicroelectronics |
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auf Bestellung 87 Stücke: Lieferzeit 7-14 Tag (e) |
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STN93003 | STMicroelectronics |
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auf Bestellung 1651 Stücke: Lieferzeit 7-14 Tag (e) |
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STN9360 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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STN951 | STMicroelectronics |
![]() Description: Transistor: PNP; bipolar; 60V; 5A; 1.6W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 1.6W Case: SOT223 Current gain: 10...350 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1897 Stücke: Lieferzeit 7-14 Tag (e) |
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STP03D200 | STMicroelectronics |
![]() Description: Transistor: NPN; bipolar; Darlington; 1.2kV; 0.1A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 1.2kV Collector current: 0.1A Power dissipation: 40W Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.23...1.32mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
STP08CP05MTR | STMicroelectronics |
![]() Description: IC: driver; LED driver; SO16; 5÷100mA; 1.3÷20V; Ch: 8; Uin: 3÷5.5V Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: SO16 Output current: 5...100mA Output voltage: 1.3...20V Number of channels: 8 Integrated circuit features: shift register Mounting: SMD Operating temperature: -40...125°C Input voltage: 3...5.5V Frequency: 30MHz Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
STP08CP05TTR | STMicroelectronics |
![]() Description: IC: driver; LED driver; TSSOP16; 5÷100mA; 1.3÷20V; Ch: 8; Uin: 3÷5.5V Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: TSSOP16 Output current: 5...100mA Output voltage: 1.3...20V Number of channels: 8 Integrated circuit features: shift register Mounting: SMD Operating temperature: -40...125°C Input voltage: 3...5.5V Frequency: 30MHz Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
STP08CP05XTTR | STMicroelectronics |
![]() Description: IC: driver; LED driver; TSSOP16EP; 5÷100mA; 1.3÷20V; Ch: 8; 30MHz Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: TSSOP16EP Output current: 5...100mA Output voltage: 1.3...20V Number of channels: 8 Integrated circuit features: shift register Mounting: SMD Operating temperature: -40...125°C Input voltage: 3...5.5V Frequency: 30MHz Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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STP08DP05MTR | STMicroelectronics |
![]() Description: IC: driver; LED driver; SO16; 5÷100mA; 1.3÷20V; Ch: 8; Uin: 3÷5.5V Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: SO16 Output current: 5...100mA Output voltage: 1.3...20V Number of channels: 8 Integrated circuit features: fault detection; shift register Mounting: SMD Operating temperature: -40...125°C Input voltage: 3...5.5V Frequency: 30MHz Kind of package: reel; tape Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
STP08DP05TTR | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
STP08DP05XTTR | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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STP100N10F7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Pulsed drain current: 320A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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STP100N6F7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 75A; 125W Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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STP100NF04 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 120A; 300W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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STP105N3LL | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 105A; Idm: 320A Type of transistor: N-MOSFET Technology: STripFET™ H6 Polarisation: unipolar Drain-source voltage: 30V Drain current: 105A Pulsed drain current: 320A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
STP10LN80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 5A; Idm: 32A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Pulsed drain current: 32A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.63Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
STP10N105K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.05kV; 6A; Idm: 24A; 130W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 6A Power dissipation: 130W Case: TO220 Gate-source voltage: ±25V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 21.5nC Pulsed drain current: 24A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
STP10N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 4.9A; Idm: 30A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.9A Pulsed drain current: 30A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: THT Gate charge: 13.5nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ M2 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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STP10N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 22nC Pulsed drain current: 36A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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STP10N95K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 5A; 130W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 5A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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STP10NK60Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 115W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Power dissipation: 115W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 240 Stücke: Lieferzeit 7-14 Tag (e) |
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STP10NK60ZFP | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 35W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 495 Stücke: Lieferzeit 7-14 Tag (e) |
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STP10NK70ZFP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 5.4A; Idm: 34A; 35W; TO220FP Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 5.4A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 90nC Pulsed drain current: 34A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 86 Stücke: Lieferzeit 7-14 Tag (e) |
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STP10NK80Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 122 Stücke: Lieferzeit 7-14 Tag (e) |
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STP10NK80ZFP | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3A; 40W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 77 Stücke: Lieferzeit 7-14 Tag (e) |
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STP10NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; Idm: 32A; 70W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 19nC Pulsed drain current: 32A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
STP110N10F7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 76A Pulsed drain current: 415A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Technology: STripFET™ F7 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
STP11N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 6.3A; Idm: 40A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.3A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 16.5nC Pulsed drain current: 40A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
STP11N65M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 4.4A; Idm: 28A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.4A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.68Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 12.5nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
STP11N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.6A Pulsed drain current: 36A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.48Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
STP11NK40Z | STMicroelectronics |
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auf Bestellung 142 Stücke: Lieferzeit 7-14 Tag (e) |
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STP11NK40ZFP | STMicroelectronics |
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auf Bestellung 194 Stücke: Lieferzeit 7-14 Tag (e) |
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STP11NK50Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; 125W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.3A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 403 Stücke: Lieferzeit 7-14 Tag (e) |
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STP11NK50ZFP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; 30W; TO220FP; ESD Mounting: THT Drain-source voltage: 500V Drain current: 6.3A On-state resistance: 0.52Ω Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of package: tube Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Case: TO220FP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 53 Stücke: Lieferzeit 7-14 Tag (e) |
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STP11NM60 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 160W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 44A Gate charge: 30nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 102 Stücke: Lieferzeit 7-14 Tag (e) |
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STP11NM60FD | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 7A; 160W; TO220-3 Type of transistor: N-MOSFET Technology: FDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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STP11NM60ND | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.3A; 90W Type of transistor: N-MOSFET Technology: FDmesh™ II Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.3A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 56 Stücke: Lieferzeit 7-14 Tag (e) |
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STP11NM80 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 150W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 94 Stücke: Lieferzeit 7-14 Tag (e) |
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STP120N4F6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 40V; 80A; Idm: 320A Drain-source voltage: 40V Drain current: 80A On-state resistance: 4.3mΩ Type of transistor: N-MOSFET Power dissipation: 110W Polarisation: unipolar Kind of package: tube Gate charge: 65nC Technology: STripFET™ H6 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 320A Mounting: THT Case: TO220-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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STP120NF10 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; 312W Drain-source voltage: 100V Drain current: 77A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 312W Polarisation: unipolar Kind of package: tube Technology: STripFET™ II Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 661 Stücke: Lieferzeit 7-14 Tag (e) |
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STP12N120K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.2kV; 7.6A; Idm: 48A Drain-source voltage: 1.2kV Drain current: 7.6A On-state resistance: 690mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: tube Gate charge: 44.2nC Technology: MDmesh™ K5 Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 48A Mounting: THT Case: TO220-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
STP12N50M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 500V; 7A; Idm: 40A; 85W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 85W Case: TO220-3 Mounting: THT Kind of package: tube Drain current: 7A Drain-source voltage: 500V On-state resistance: 0.38Ω Gate charge: 15nC Technology: MDmesh™ M2 Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: 40A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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STP12N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 5.7A; Idm: 36A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 16nC Pulsed drain current: 36A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 48 Stücke: Lieferzeit 7-14 Tag (e) |
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STP12N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 5.4A; 70W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.4A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.43Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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STP12NK30Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 5.6A; 90W; TO220-3; ESD Drain-source voltage: 300V Drain current: 5.6A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 90W Polarisation: unipolar Kind of package: tube Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Case: TO220-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 102 Stücke: Lieferzeit 7-14 Tag (e) |
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STP12NK80Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO220-3; ESD Drain-source voltage: 800V Drain current: 6.6A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 190W Polarisation: unipolar Kind of package: tube Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Case: TO220-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 61 Stücke: Lieferzeit 7-14 Tag (e) |
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STP12NM50 | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 160W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.5A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 130 Stücke: Lieferzeit 7-14 Tag (e) |
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STP12NM50FP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 550V; 7.5A; 35W; TO220FP; ESD Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 550V Drain current: 7.5A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 105 Stücke: Lieferzeit 7-14 Tag (e) |
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STP130N6F7 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
STP13N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
STP13N65M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.3A; Idm: 40A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.43Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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STP13N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
STP13N95K3 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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STP13NK60Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 99 Stücke: Lieferzeit 7-14 Tag (e) |
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STP13NK60ZFP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 35W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.2A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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STP13NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 6.93A; 90W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.93A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ || Anzahl je Verpackung: 1 Stücke |
auf Bestellung 61 Stücke: Lieferzeit 7-14 Tag (e) |
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STP13NM60ND | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.93A; Idm: 44A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.93A Pulsed drain current: 44A Power dissipation: 109W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: THT Gate charge: 24.5nC Kind of package: tube Kind of channel: enhancement Technology: FDmesh™ II Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
STP140N6F7 | STMicroelectronics |
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auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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STP140N8F7 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
STN83003 |
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Hersteller: STMicroelectronics
STN83003 NPN SMD transistors
STN83003 NPN SMD transistors
auf Bestellung 160 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.77 EUR |
160+ | 0.44 EUR |
188+ | 0.39 EUR |
2000+ | 0.24 EUR |
STN851 |
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Hersteller: STMicroelectronics
STN851 NPN SMD transistors
STN851 NPN SMD transistors
auf Bestellung 87 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
67+ | 1.07 EUR |
87+ | 0.82 EUR |
163+ | 0.44 EUR |
10000+ | 0.35 EUR |
STN93003 |
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Hersteller: STMicroelectronics
STN93003 PNP SMD transistors
STN93003 PNP SMD transistors
auf Bestellung 1651 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
74+ | 0.98 EUR |
226+ | 0.32 EUR |
239+ | 0.3 EUR |
7000+ | 0.29 EUR |
STN9360 |
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Hersteller: STMicroelectronics
STN9360 PNP SMD transistors
STN9360 PNP SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STN951 |
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Hersteller: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 10...350
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 10...350
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1897 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.27 EUR |
91+ | 0.79 EUR |
260+ | 0.28 EUR |
275+ | 0.26 EUR |
STP03D200 |
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Hersteller: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 1.2kV; 0.1A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 1.2kV
Collector current: 0.1A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Anzahl je Verpackung: 1 Stücke
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 1.2kV; 0.1A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 1.2kV
Collector current: 0.1A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP08CP05MTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO16; 5÷100mA; 1.3÷20V; Ch: 8; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO16
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 8
Integrated circuit features: shift register
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; LED driver; SO16; 5÷100mA; 1.3÷20V; Ch: 8; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO16
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 8
Integrated circuit features: shift register
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP08CP05TTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; TSSOP16; 5÷100mA; 1.3÷20V; Ch: 8; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: TSSOP16
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 8
Integrated circuit features: shift register
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; LED driver; TSSOP16; 5÷100mA; 1.3÷20V; Ch: 8; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: TSSOP16
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 8
Integrated circuit features: shift register
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP08CP05XTTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; TSSOP16EP; 5÷100mA; 1.3÷20V; Ch: 8; 30MHz
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: TSSOP16EP
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 8
Integrated circuit features: shift register
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; LED driver; TSSOP16EP; 5÷100mA; 1.3÷20V; Ch: 8; 30MHz
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: TSSOP16EP
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 8
Integrated circuit features: shift register
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP08DP05MTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO16; 5÷100mA; 1.3÷20V; Ch: 8; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO16
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 8
Integrated circuit features: fault detection; shift register
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Anzahl je Verpackung: 2500 Stücke
Category: LED drivers
Description: IC: driver; LED driver; SO16; 5÷100mA; 1.3÷20V; Ch: 8; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO16
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 8
Integrated circuit features: fault detection; shift register
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP08DP05TTR |
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Hersteller: STMicroelectronics
STP08DP05TTR LED drivers
STP08DP05TTR LED drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP08DP05XTTR |
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Hersteller: STMicroelectronics
STP08DP05XTTR LED drivers
STP08DP05XTTR LED drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP100N10F7 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.63 EUR |
22+ | 3.26 EUR |
24+ | 2.97 EUR |
STP100N6F7 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 75A; 125W
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 75A; 125W
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP100NF04 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 120A; 300W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 120A; 300W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.28 EUR |
19+ | 3.86 EUR |
23+ | 3.1 EUR |
STP105N3LL |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 105A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ H6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 105A
Pulsed drain current: 320A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 105A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ H6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 105A
Pulsed drain current: 320A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP10LN80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 5A; Idm: 32A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Pulsed drain current: 32A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 5A; Idm: 32A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Pulsed drain current: 32A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP10N105K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 6A; Idm: 24A; 130W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 6A
Power dissipation: 130W
Case: TO220
Gate-source voltage: ±25V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 6A; Idm: 24A; 130W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 6A
Power dissipation: 130W
Case: TO220
Gate-source voltage: ±25V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP10N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 4.9A; Idm: 30A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.9A
Pulsed drain current: 30A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M2
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 4.9A; Idm: 30A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.9A
Pulsed drain current: 30A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP10N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 36A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 36A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 5.96 EUR |
16+ | 4.46 EUR |
STP10N95K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 5A; 130W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 5A; 130W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP10NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 115W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 115W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 115W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 115W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 240 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.93 EUR |
38+ | 1.9 EUR |
68+ | 1.06 EUR |
72+ | 1 EUR |
STP10NK60ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 495 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.43 EUR |
41+ | 1.74 EUR |
72+ | 1 EUR |
76+ | 0.94 EUR |
STP10NK70ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5.4A; Idm: 34A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 90nC
Pulsed drain current: 34A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5.4A; Idm: 34A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 90nC
Pulsed drain current: 34A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 3.06 EUR |
30+ | 2.46 EUR |
56+ | 1.29 EUR |
59+ | 1.22 EUR |
STP10NK80Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 122 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.23 EUR |
25+ | 2.92 EUR |
32+ | 2.25 EUR |
34+ | 2.12 EUR |
STP10NK80ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; 40W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; 40W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.86 EUR |
23+ | 3.12 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
3750+ | 1.4 EUR |
STP10NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; Idm: 32A; 70W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19nC
Pulsed drain current: 32A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; Idm: 32A; 70W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19nC
Pulsed drain current: 32A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP110N10F7 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP11N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 6.3A; Idm: 40A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.5nC
Pulsed drain current: 40A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 6.3A; Idm: 40A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.5nC
Pulsed drain current: 40A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP11N65M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 4.4A; Idm: 28A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.4A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 12.5nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 4.4A; Idm: 28A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.4A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 12.5nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP11N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.6A
Pulsed drain current: 36A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.6A
Pulsed drain current: 36A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP11NK40Z | ![]() |
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Hersteller: STMicroelectronics
STP11NK40Z THT N channel transistors
STP11NK40Z THT N channel transistors
auf Bestellung 142 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.8 EUR |
75+ | 0.96 EUR |
80+ | 0.9 EUR |
STP11NK40ZFP |
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Hersteller: STMicroelectronics
STP11NK40ZFP THT N channel transistors
STP11NK40ZFP THT N channel transistors
auf Bestellung 194 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.19 EUR |
79+ | 0.92 EUR |
84+ | 0.86 EUR |
STP11NK50Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; 125W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; 125W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 403 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.36 EUR |
22+ | 3.35 EUR |
58+ | 1.24 EUR |
61+ | 1.17 EUR |
5000+ | 1.14 EUR |
STP11NK50ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; 30W; TO220FP; ESD
Mounting: THT
Drain-source voltage: 500V
Drain current: 6.3A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; 30W; TO220FP; ESD
Mounting: THT
Drain-source voltage: 500V
Drain current: 6.3A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.96 EUR |
45+ | 1.6 EUR |
53+ | 1.34 EUR |
1000+ | 0.92 EUR |
STP11NM60 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate charge: 30nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate charge: 30nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 102 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.62 EUR |
32+ | 2.25 EUR |
34+ | 2.13 EUR |
STP11NM60FD |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 7A; 160W; TO220-3
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 7A; 160W; TO220-3
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.9 EUR |
30+ | 2.39 EUR |
STP11NM60ND |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.3A; 90W
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.3A; 90W
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 2.99 EUR |
39+ | 1.86 EUR |
41+ | 1.76 EUR |
STP11NM80 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 150W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 150W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 94 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.23 EUR |
26+ | 2.82 EUR |
27+ | 2.66 EUR |
STP120N4F6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 40V; 80A; Idm: 320A
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Kind of package: tube
Gate charge: 65nC
Technology: STripFET™ H6
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 320A
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 40V; 80A; Idm: 320A
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Kind of package: tube
Gate charge: 65nC
Technology: STripFET™ H6
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 320A
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP120NF10 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; 312W
Drain-source voltage: 100V
Drain current: 77A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 312W
Polarisation: unipolar
Kind of package: tube
Technology: STripFET™ II
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; 312W
Drain-source voltage: 100V
Drain current: 77A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 312W
Polarisation: unipolar
Kind of package: tube
Technology: STripFET™ II
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 661 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.23 EUR |
20+ | 3.7 EUR |
21+ | 3.43 EUR |
47+ | 1.54 EUR |
50+ | 1.46 EUR |
STP12N120K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.2kV; 7.6A; Idm: 48A
Drain-source voltage: 1.2kV
Drain current: 7.6A
On-state resistance: 690mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Gate charge: 44.2nC
Technology: MDmesh™ K5
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 48A
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.2kV; 7.6A; Idm: 48A
Drain-source voltage: 1.2kV
Drain current: 7.6A
On-state resistance: 690mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Gate charge: 44.2nC
Technology: MDmesh™ K5
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 48A
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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STP12N50M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 500V; 7A; Idm: 40A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 85W
Case: TO220-3
Mounting: THT
Kind of package: tube
Drain current: 7A
Drain-source voltage: 500V
On-state resistance: 0.38Ω
Gate charge: 15nC
Technology: MDmesh™ M2
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 40A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 500V; 7A; Idm: 40A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 85W
Case: TO220-3
Mounting: THT
Kind of package: tube
Drain current: 7A
Drain-source voltage: 500V
On-state resistance: 0.38Ω
Gate charge: 15nC
Technology: MDmesh™ M2
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 40A
Anzahl je Verpackung: 1 Stücke
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STP12N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 5.7A; Idm: 36A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16nC
Pulsed drain current: 36A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 5.7A; Idm: 36A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16nC
Pulsed drain current: 36A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 2.99 EUR |
35+ | 2.04 EUR |
40+ | 1.83 EUR |
48+ | 1.49 EUR |
100+ | 1.27 EUR |
STP12N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 5.4A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.43Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 5.4A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.43Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
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STP12NK30Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 5.6A; 90W; TO220-3; ESD
Drain-source voltage: 300V
Drain current: 5.6A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 90W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 5.6A; 90W; TO220-3; ESD
Drain-source voltage: 300V
Drain current: 5.6A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 90W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 102 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.96 EUR |
61+ | 1.17 EUR |
77+ | 0.93 EUR |
82+ | 0.87 EUR |
STP12NK80Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO220-3; ESD
Drain-source voltage: 800V
Drain current: 6.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 190W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO220-3; ESD
Drain-source voltage: 800V
Drain current: 6.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 190W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.32 EUR |
39+ | 1.84 EUR |
41+ | 1.74 EUR |
STP12NM50 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 130 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.49 EUR |
40+ | 1.82 EUR |
42+ | 1.72 EUR |
300+ | 1.66 EUR |
750+ | 1.64 EUR |
STP12NM50FP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 7.5A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 7.5A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 7.5A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 7.5A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 105 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.2 EUR |
35+ | 2.09 EUR |
37+ | 1.97 EUR |
STP130N6F7 |
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Hersteller: STMicroelectronics
STP130N6F7 THT N channel transistors
STP130N6F7 THT N channel transistors
Produkt ist nicht verfügbar
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STP13N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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STP13N65M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.3A; Idm: 40A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.3A; Idm: 40A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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STP13N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
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STP13N95K3 |
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Hersteller: STMicroelectronics
STP13N95K3 THT N channel transistors
STP13N95K3 THT N channel transistors
Produkt ist nicht verfügbar
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STP13NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 99 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.75 EUR |
29+ | 2.49 EUR |
38+ | 1.93 EUR |
40+ | 1.82 EUR |
STP13NK60ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
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STP13NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 6.93A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ ||
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 6.93A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ ||
Anzahl je Verpackung: 1 Stücke
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.79 EUR |
52+ | 1.39 EUR |
55+ | 1.32 EUR |
STP13NM60ND |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.93A; Idm: 44A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Pulsed drain current: 44A
Power dissipation: 109W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: FDmesh™ II
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.93A; Idm: 44A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Pulsed drain current: 44A
Power dissipation: 109W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: FDmesh™ II
Anzahl je Verpackung: 1 Stücke
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STP140N6F7 |
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Hersteller: STMicroelectronics
STP140N6F7 THT N channel transistors
STP140N6F7 THT N channel transistors
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.86 EUR |
39+ | 1.86 EUR |
41+ | 1.76 EUR |
STP140N8F7 |
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Hersteller: STMicroelectronics
STP140N8F7 THT N channel transistors
STP140N8F7 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
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