Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (170342) > Seite 1232 nach 2840
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STP40NF03L | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP40NF10 | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 35A; 150W Technology: STripFET™ II Gate-source voltage: ±20V Kind of channel: enhancement Mounting: THT Case: TO220-3 Drain-source voltage: 100V Drain current: 35A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 155 Stücke: Lieferzeit 7-14 Tag (e) |
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STP40NF10L | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3 Technology: STripFET™ Gate-source voltage: ±17V Kind of channel: enhancement Mounting: THT Case: TO220-3 Drain-source voltage: 100V Drain current: 25A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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STP40NF20 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3 Technology: STripFET™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220-3 Drain-source voltage: 200V Drain current: 25A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 160W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 67 Stücke: Lieferzeit 7-14 Tag (e) |
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STP42N60M2-EP | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP42N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: MDmesh™ V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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STP43N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 136A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STP45N10F7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 32A; Idm: 180A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 32A Pulsed drain current: 180A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STP45N40DM2AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 400V; 24A; Idm: 152A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 400V Drain current: 24A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 72mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 56nC Pulsed drain current: 152A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP45N60DM2AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Case: TO220-3 On-state resistance: 93mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 136A Drain current: 21A Power dissipation: 250W Gate-source voltage: ±25V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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STP45N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Case: TO220-3 On-state resistance: 99mΩ Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 95A Drain current: 19A Power dissipation: 210W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 47 Stücke: Lieferzeit 7-14 Tag (e) |
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STP45N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 210W Version: ESD Gate-source voltage: ±25V Drain current: 22A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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STP45NF06 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 26A; 80W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 26A Power dissipation: 80W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 115 Stücke: Lieferzeit 7-14 Tag (e) |
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STP46N60M6 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STP46NF30 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STP4CMPQTR | STMicroelectronics |
![]() Description: IC: driver; LED driver; QFN20; 2.5÷30mA; Ch: 4; 2.7÷5.5VDC; 30MHz Type of integrated circuit: driver Kind of package: reel; tape Case: QFN20 Mounting: SMD Operating temperature: -40...85°C Output current: 2.5...30mA Number of channels: 4 Input voltage: 2.7...5.5V DC Kind of integrated circuit: LED driver Frequency: 30MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP4N150 | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO220-3 Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 2.5A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 236 Stücke: Lieferzeit 7-14 Tag (e) |
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STP4N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
STP4N90K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 1.9A; Idm: 12A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.9A Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 12A Power dissipation: 60W Gate charge: 5.3nC Technology: MDmesh™ K5 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP4NK60Z | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 56 Stücke: Lieferzeit 7-14 Tag (e) |
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STP4NK60ZFP | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 136 Stücke: Lieferzeit 7-14 Tag (e) |
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STP4NK80Z | STMicroelectronics |
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auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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STP4NK80ZFP | STMicroelectronics |
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auf Bestellung 49 Stücke: Lieferzeit 7-14 Tag (e) |
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STP50N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 137A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 137A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 55nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP50N65DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 120A; 250W; TO220-3 Type of transistor: N-MOSFET Power dissipation: 250W Case: TO220-3 Mounting: THT Gate charge: 52.5nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: 120A Drain-source voltage: 650V Drain current: 33A On-state resistance: 91mΩ Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
STP50NF25 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP55NF06 | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 483 Stücke: Lieferzeit 7-14 Tag (e) |
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STP55NF06FP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 30W; ESD Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 405 Stücke: Lieferzeit 7-14 Tag (e) |
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STP55NF06L | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 39A; 95W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Power dissipation: 95W Case: TO220-3 Gate-source voltage: ±16V On-state resistance: 18mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
STP57N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26.5A Pulsed drain current: 168A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 63mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ M5 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STP5N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 2.2A; Idm: 14A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.2A Pulsed drain current: 14A Power dissipation: 45W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 1.4Ω Mounting: THT Gate charge: 8nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STP5N80K5 | STMicroelectronics |
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auf Bestellung 65 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5N95K5 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STP5NK100Z | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP5NK50Z | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.7A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 65 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK50ZFP | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.7A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 152 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK52ZD | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 520V; 2.7A; Idm: 17.6A; 70W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 520V Drain current: 2.7A Pulsed drain current: 17.6A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 16.9nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK60Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.16A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 34nC Pulsed drain current: 20A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP5NK80Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 110W; TO220-3; ESD Mounting: THT Drain-source voltage: 800V Drain current: 2.7A On-state resistance: 2.4Ω Type of transistor: N-MOSFET Power dissipation: 110W Polarisation: unipolar Kind of package: tube Version: ESD Technology: PowerMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Case: TO220-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 334 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK80ZFP | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 30W; TO220FP; ESD Mounting: THT Drain-source voltage: 800V Drain current: 2.7A On-state resistance: 2.4Ω Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of package: tube Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Case: TO220FP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 480 Stücke: Lieferzeit 7-14 Tag (e) |
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STP60NF06 | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 214 Stücke: Lieferzeit 7-14 Tag (e) |
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STP60NF06L | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±15V On-state resistance: 14mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 902 Stücke: Lieferzeit 7-14 Tag (e) |
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STP60NF10 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 66A; 300W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 100V Drain current: 66A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 149 Stücke: Lieferzeit 7-14 Tag (e) |
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STP65N045M9 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STP65N150M9 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP6N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 60W Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.9A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 89 Stücke: Lieferzeit 7-14 Tag (e) |
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STP6N62K3 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP6N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 2.8A; Idm: 18A Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.8A Pulsed drain current: 18A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
STP6N90K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 4A; Idm: 24A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Pulsed drain current: 24A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.1Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STP6N95K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 6A; 90W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 6A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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STP6NK60Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.8A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 83 Stücke: Lieferzeit 7-14 Tag (e) |
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STP6NK60ZFP | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.8A Power dissipation: 110W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 450 Stücke: Lieferzeit 7-14 Tag (e) |
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STP6NK90Z | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 140W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.65A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 262 Stücke: Lieferzeit 7-14 Tag (e) |
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STP6NK90ZFP | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.65A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 337 Stücke: Lieferzeit 7-14 Tag (e) |
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STP75NF20 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 47A; 190W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 47A Case: TO220-3 On-state resistance: 34mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 190W Technology: STripFET™ Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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STP75NF75 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 75V; 70A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 70A Case: TO220-3 On-state resistance: 11mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 300W Technology: STripFET™ II Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 694 Stücke: Lieferzeit 7-14 Tag (e) |
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STP7N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 20A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.95Ω Mounting: THT Gate charge: 8.8nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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STP7N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 6A; 110W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: SuperMESH5™ Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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STP7N95K3 | STMicroelectronics |
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auf Bestellung 105 Stücke: Lieferzeit 7-14 Tag (e) |
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STP7NK40Z | STMicroelectronics |
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auf Bestellung 72 Stücke: Lieferzeit 7-14 Tag (e) |
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STP40NF03L |
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Hersteller: STMicroelectronics
STP40NF03L THT N channel transistors
STP40NF03L THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP40NF10 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 35A; 150W
Technology: STripFET™ II
Gate-source voltage: ±20V
Kind of channel: enhancement
Mounting: THT
Case: TO220-3
Drain-source voltage: 100V
Drain current: 35A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 35A; 150W
Technology: STripFET™ II
Gate-source voltage: ±20V
Kind of channel: enhancement
Mounting: THT
Case: TO220-3
Drain-source voltage: 100V
Drain current: 35A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 155 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 2.99 EUR |
50+ | 1.46 EUR |
85+ | 0.84 EUR |
90+ | 0.80 EUR |
STP40NF10L |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3
Technology: STripFET™
Gate-source voltage: ±17V
Kind of channel: enhancement
Mounting: THT
Case: TO220-3
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3
Technology: STripFET™
Gate-source voltage: ±17V
Kind of channel: enhancement
Mounting: THT
Case: TO220-3
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.17 EUR |
33+ | 2.17 EUR |
34+ | 2.10 EUR |
55+ | 1.30 EUR |
STP40NF20 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3
Technology: STripFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3
Technology: STripFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.65 EUR |
18+ | 4.19 EUR |
23+ | 3.20 EUR |
24+ | 3.03 EUR |
STP42N60M2-EP |
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Hersteller: STMicroelectronics
STP42N60M2-EP THT N channel transistors
STP42N60M2-EP THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP42N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.62 EUR |
7+ | 10.61 EUR |
250+ | 10.37 EUR |
STP43N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP45N10F7 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 32A; Idm: 180A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Pulsed drain current: 180A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 32A; Idm: 180A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Pulsed drain current: 180A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP45N40DM2AG |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 400V; 24A; Idm: 152A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 24A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 72mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Pulsed drain current: 152A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 400V; 24A; Idm: 152A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 24A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 72mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Pulsed drain current: 152A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP45N60DM2AG |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO220-3
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 136A
Drain current: 21A
Power dissipation: 250W
Gate-source voltage: ±25V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO220-3
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 136A
Drain current: 21A
Power dissipation: 250W
Gate-source voltage: ±25V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
8+ | 8.94 EUR |
STP45N60DM6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO220-3
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Drain current: 19A
Power dissipation: 210W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO220-3
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Drain current: 19A
Power dissipation: 210W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 47 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.59 EUR |
13+ | 5.59 EUR |
100+ | 5.45 EUR |
STP45N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 210W
Version: ESD
Gate-source voltage: ±25V
Drain current: 22A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 210W
Version: ESD
Gate-source voltage: ±25V
Drain current: 22A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.37 EUR |
10+ | 7.51 EUR |
11+ | 7.11 EUR |
50+ | 7.08 EUR |
100+ | 6.84 EUR |
STP45NF06 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 26A; 80W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 80W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 26A; 80W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 80W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 115 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
68+ | 1.06 EUR |
73+ | 0.98 EUR |
114+ | 0.63 EUR |
115+ | 0.61 EUR |
STP46N60M6 |
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Hersteller: STMicroelectronics
STP46N60M6 THT N channel transistors
STP46N60M6 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP46NF30 |
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Hersteller: STMicroelectronics
STP46NF30 THT N channel transistors
STP46NF30 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP4CMPQTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; QFN20; 2.5÷30mA; Ch: 4; 2.7÷5.5VDC; 30MHz
Type of integrated circuit: driver
Kind of package: reel; tape
Case: QFN20
Mounting: SMD
Operating temperature: -40...85°C
Output current: 2.5...30mA
Number of channels: 4
Input voltage: 2.7...5.5V DC
Kind of integrated circuit: LED driver
Frequency: 30MHz
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; LED driver; QFN20; 2.5÷30mA; Ch: 4; 2.7÷5.5VDC; 30MHz
Type of integrated circuit: driver
Kind of package: reel; tape
Case: QFN20
Mounting: SMD
Operating temperature: -40...85°C
Output current: 2.5...30mA
Number of channels: 4
Input voltage: 2.7...5.5V DC
Kind of integrated circuit: LED driver
Frequency: 30MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP4N150 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 236 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.37 EUR |
10+ | 7.26 EUR |
STP4N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP4N90K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 1.9A; Idm: 12A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.9A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Power dissipation: 60W
Gate charge: 5.3nC
Technology: MDmesh™ K5
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 1.9A; Idm: 12A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.9A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Power dissipation: 60W
Gate charge: 5.3nC
Technology: MDmesh™ K5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP4NK60Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
51+ | 1.42 EUR |
56+ | 1.27 EUR |
63+ | 1.13 EUR |
500+ | 0.69 EUR |
1500+ | 0.67 EUR |
STP4NK60ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 136 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.52 EUR |
55+ | 1.30 EUR |
76+ | 0.94 EUR |
81+ | 0.89 EUR |
STP4NK80Z | ![]() |
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Hersteller: STMicroelectronics
STP4NK80Z THT N channel transistors
STP4NK80Z THT N channel transistors
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.56 EUR |
55+ | 1.30 EUR |
250+ | 0.82 EUR |
STP4NK80ZFP |
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Hersteller: STMicroelectronics
STP4NK80ZFP THT N channel transistors
STP4NK80ZFP THT N channel transistors
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.46 EUR |
51+ | 1.40 EUR |
250+ | 0.92 EUR |
STP50N60DM6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 137A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 137A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 137A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 137A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP50N65DM6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 120A; 250W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO220-3
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 120A
Drain-source voltage: 650V
Drain current: 33A
On-state resistance: 91mΩ
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 120A; 250W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO220-3
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 120A
Drain-source voltage: 650V
Drain current: 33A
On-state resistance: 91mΩ
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP50NF25 |
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Hersteller: STMicroelectronics
STP50NF25 THT N channel transistors
STP50NF25 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP55NF06 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 483 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.22 EUR |
70+ | 1.02 EUR |
110+ | 0.65 EUR |
116+ | 0.62 EUR |
STP55NF06FP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 30W; ESD
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 30W; ESD
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 405 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.16 EUR |
43+ | 1.70 EUR |
50+ | 1.43 EUR |
107+ | 0.67 EUR |
114+ | 0.63 EUR |
STP55NF06L |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 39A; 95W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Power dissipation: 95W
Case: TO220-3
Gate-source voltage: ±16V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 39A; 95W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Power dissipation: 95W
Case: TO220-3
Gate-source voltage: ±16V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP57N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M5
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP5N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Pulsed drain current: 14A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Pulsed drain current: 14A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP5N80K5 |
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Hersteller: STMicroelectronics
STP5N80K5 THT N channel transistors
STP5N80K5 THT N channel transistors
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.32 EUR |
47+ | 1.53 EUR |
50+ | 1.44 EUR |
STP5N95K5 |
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Hersteller: STMicroelectronics
STP5N95K5 THT N channel transistors
STP5N95K5 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP5NK100Z |
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Hersteller: STMicroelectronics
STP5NK100Z THT N channel transistors
STP5NK100Z THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP5NK50Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.26 EUR |
65+ | 1.10 EUR |
68+ | 1.06 EUR |
1000+ | 0.61 EUR |
STP5NK50ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 152 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 3.05 EUR |
44+ | 1.64 EUR |
99+ | 0.73 EUR |
105+ | 0.69 EUR |
STP5NK52ZD |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 520V; 2.7A; Idm: 17.6A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 520V
Drain current: 2.7A
Pulsed drain current: 17.6A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 16.9nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 520V; 2.7A; Idm: 17.6A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 520V
Drain current: 2.7A
Pulsed drain current: 17.6A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 16.9nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.10 EUR |
28+ | 2.56 EUR |
77+ | 0.93 EUR |
STP5NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP5NK80Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 110W; TO220-3; ESD
Mounting: THT
Drain-source voltage: 800V
Drain current: 2.7A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: PowerMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 110W; TO220-3; ESD
Mounting: THT
Drain-source voltage: 800V
Drain current: 2.7A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: PowerMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 334 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.33 EUR |
51+ | 1.42 EUR |
82+ | 0.87 EUR |
87+ | 0.83 EUR |
STP5NK80ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 30W; TO220FP; ESD
Mounting: THT
Drain-source voltage: 800V
Drain current: 2.7A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 30W; TO220FP; ESD
Mounting: THT
Drain-source voltage: 800V
Drain current: 2.7A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 480 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.75 EUR |
34+ | 2.13 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
1000+ | 0.92 EUR |
3000+ | 0.89 EUR |
STP60NF06 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 214 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.85 EUR |
66+ | 1.09 EUR |
104+ | 0.69 EUR |
110+ | 0.65 EUR |
STP60NF06L |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±15V
On-state resistance: 14mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±15V
On-state resistance: 14mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 902 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.46 EUR |
62+ | 1.16 EUR |
107+ | 0.67 EUR |
114+ | 0.63 EUR |
STP60NF10 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 66A; 300W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 66A; 300W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 149 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.82 EUR |
43+ | 1.67 EUR |
72+ | 1.00 EUR |
76+ | 0.94 EUR |
STP65N045M9 |
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Hersteller: STMicroelectronics
STP65N045M9 THT N channel transistors
STP65N045M9 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP65N150M9 |
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Hersteller: STMicroelectronics
STP65N150M9 THT N channel transistors
STP65N150M9 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP6N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 60W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 60W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 89 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.67 EUR |
49+ | 1.49 EUR |
55+ | 1.32 EUR |
63+ | 1.14 EUR |
67+ | 1.07 EUR |
STP6N62K3 |
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Hersteller: STMicroelectronics
STP6N62K3 THT N channel transistors
STP6N62K3 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP6N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 2.8A; Idm: 18A
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.8A
Pulsed drain current: 18A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 2.8A; Idm: 18A
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.8A
Pulsed drain current: 18A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP6N90K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 4A; Idm: 24A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Pulsed drain current: 24A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 4A; Idm: 24A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Pulsed drain current: 24A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP6N95K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 6A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 6A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 6A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 6A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.72 EUR |
30+ | 2.39 EUR |
250+ | 1.80 EUR |
STP6NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.8A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.8A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 83 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.82 EUR |
65+ | 1.12 EUR |
81+ | 0.89 EUR |
83+ | 0.86 EUR |
STP6NK60ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.8A
Power dissipation: 110W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.8A
Power dissipation: 110W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 450 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
47+ | 1.54 EUR |
57+ | 1.26 EUR |
77+ | 0.93 EUR |
82+ | 0.87 EUR |
STP6NK90Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.65A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.65A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 262 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 3.02 EUR |
28+ | 2.63 EUR |
50+ | 1.43 EUR |
54+ | 1.34 EUR |
1000+ | 1.30 EUR |
STP6NK90ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.65A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.65A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 337 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.12 EUR |
33+ | 2.17 EUR |
49+ | 1.47 EUR |
52+ | 1.40 EUR |
STP75NF20 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 47A; 190W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 47A
Case: TO220-3
On-state resistance: 34mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 190W
Technology: STripFET™
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 47A; 190W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 47A
Case: TO220-3
On-state resistance: 34mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 190W
Technology: STripFET™
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.22 EUR |
16+ | 4.70 EUR |
20+ | 3.59 EUR |
22+ | 3.40 EUR |
STP75NF75 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 75V; 70A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Case: TO220-3
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 300W
Technology: STripFET™ II
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 75V; 70A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Case: TO220-3
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 300W
Technology: STripFET™ II
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 694 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.09 EUR |
47+ | 1.54 EUR |
72+ | 1.00 EUR |
76+ | 0.94 EUR |
STP7N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 17.88 EUR |
10+ | 7.15 EUR |
19+ | 3.76 EUR |
50+ | 1.43 EUR |
500+ | 0.84 EUR |
STP7N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 6A; 110W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SuperMESH5™
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 6A; 110W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SuperMESH5™
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.76 EUR |
25+ | 2.86 EUR |
STP7N95K3 |
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Hersteller: STMicroelectronics
STP7N95K3 THT N channel transistors
STP7N95K3 THT N channel transistors
auf Bestellung 105 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.97 EUR |
37+ | 1.96 EUR |
39+ | 1.86 EUR |
STP7NK40Z | ![]() |
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Hersteller: STMicroelectronics
STP7NK40Z THT N channel transistors
STP7NK40Z THT N channel transistors
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
56+ | 1.29 EUR |
72+ | 0.99 EUR |
250+ | 0.70 EUR |