Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (129504) > Seite 2072 nach 2159
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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1N5817 | STMicroelectronics |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: Ammo Pack Max. load current: 10A |
auf Bestellung 2599 Stücke: Lieferzeit 14-21 Tag (e) |
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| STM32F051K8U7TR | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 48MHz Mounting: SMD Case: UFQFPN32 Supply voltage: 2...3.6V DC Interface: HDMI CEC; I2C; SPI; USART x2 Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 8kB SRAM; 64kB FLASH Number of 12bit A/D converters: 13 Number of 12bit D/A converters: 1 Number of 16bit timers: 7 Family: STM32F0 Kind of core: 32-bit Number of 32bit timers: 1 Number of inputs/outputs: 27 Kind of architecture: Cortex M0 Kind of package: reel; tape Operating temperature: -40...105°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STL10N60M6 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.5A Power dissipation: 48W Case: PowerFLAT 5x6 On-state resistance: 0.66Ω Mounting: SMD Kind of channel: enhancement Gate charge: 8.8nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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STM32F411RCT7 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 256kBFLASH; ARM Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 50 Case: LQFP64 Interface: I2C; IrDA; MMC; SDIO; SPI; UART; USART; USB OTG Kind of architecture: Cortex M4 Memory: 256kB FLASH Operating temperature: -40...105°C Family: ARM Kind of core: 32-bit |
auf Bestellung 960 Stücke: Lieferzeit 14-21 Tag (e) |
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STP35N60DM2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Power dissipation: 210W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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Z0103MN 6AA4 | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 3mA Max. forward impulse current: 8A Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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STD13NM60ND | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 109W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 109W Case: DPAK On-state resistance: 0.38Ω Mounting: SMD Gate charge: 24.5nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TS912AIDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1.3V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
auf Bestellung 8305 Stücke: Lieferzeit 14-21 Tag (e) |
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TS912IDT | STMicroelectronics |
 Category: SMD operational amplifiersDescription: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1.3V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 12mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
auf Bestellung 5083 Stücke: Lieferzeit 14-21 Tag (e) |
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TS912BIDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.4V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 2mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
auf Bestellung 1072 Stücke: Lieferzeit 14-21 Tag (e) |
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TS912ID | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1.3V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 12mV Kind of package: tube Input bias current: 0.3nA Input offset current: 0.2nA |
auf Bestellung 654 Stücke: Lieferzeit 14-21 Tag (e) |
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TS912IYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV Type of integrated circuit: operational amplifier Bandwidth: 800kHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1.3V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 12mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TS912AIYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV Type of integrated circuit: operational amplifier Bandwidth: 1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.8V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TS912BIYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷16VDC; SO8; 3mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.4V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 3mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BD243C | STMicroelectronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 115V Collector current: 6A Case: TO220 Mounting: THT Frequency: 3MHz Power: 65W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BD677A | STMicroelectronics |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 40W Case: SOT32 Current gain: 750 Mounting: THT Kind of package: tube |
auf Bestellung 1123 Stücke: Lieferzeit 14-21 Tag (e) |
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M24C02-FMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN5 Kind of interface: serial Operating temperature: -40...85°C |
auf Bestellung 1831 Stücke: Lieferzeit 14-21 Tag (e) |
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| STL15N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Case: PowerFLAT 5x6 On-state resistance: 375mΩ Mounting: SMD Kind of channel: enhancement Power dissipation: 52W Gate charge: 22nC Drain current: 10A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STFW40N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 34A; 63W; TO3PF Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 34A Power dissipation: 63W Case: TO3PF On-state resistance: 78mΩ Mounting: THT Gate charge: 57nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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ACS102-6TA-TR | STMicroelectronics |
Category: Triacs Description: Triac; 600V; TO92; 5mA Type of thyristor: triac Max. off-state voltage: 0.6kV Case: TO92 Gate current: 5mA Mounting: THT |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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STD8N60DM2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 85W Case: DPAK; TO252 On-state resistance: 570mΩ Mounting: SMD Gate charge: 4nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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STF18N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 25W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 25W Case: TO220FP On-state resistance: 255mΩ Mounting: THT Gate charge: 21.5nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| 1.5KE400CARL | STMicroelectronics |
Category: Diodes - Unclassified Description: 1.5KE400CARL |
auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5818 | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: Ammo Pack Max. load current: 10A |
auf Bestellung 2464 Stücke: Lieferzeit 14-21 Tag (e) |
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LD3985M28R | STMicroelectronics |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.1V Output voltage: 2.8V Output current: 0.15A Case: SOT23-5 Mounting: SMD Manufacturer series: LD3985 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 2.5...6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| BZW50-27RL | STMicroelectronics |
Category: Diodes - Unclassified Description: BZW50-27RL |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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STW9NK90Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 5A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 205 Stücke: Lieferzeit 14-21 Tag (e) |
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STB6N60M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 60W Case: D2PAK On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 8nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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STD6N60DM2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 60W Case: DPAK; TO252 On-state resistance: 1.1Ω Mounting: SMD Gate charge: 6.2nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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STM32F439BGT6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 180MHz; LQFP208; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 180MHz Mounting: SMD Number of inputs/outputs: 168 Case: LQFP208 Supply voltage: 1.8...3.6V DC Interface: CAN x2; I2C x3; I2S x2; SAI; SDIO; SPI x6; USART x4; USB OTG Kind of architecture: Cortex M4 Memory: 256kB SRAM; 1MB FLASH Family: STM32F4 Kind of core: 32-bit |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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STM32F427ZIT7 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 180MHz Mounting: SMD Number of inputs/outputs: 114 Case: LQFP144 Supply voltage: 1.8...3.6V DC Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 256kB SRAM; 2MB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Number of 16bit timers: 14 Family: STM32F4 Kind of package: in-tray Kind of core: 32-bit |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T36A | STMicroelectronics |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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Z0107MA 2AL2 | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A Type of thyristor: triac Mounting: THT Max. forward impulse current: 8A Gate current: 5mA Max. off-state voltage: 0.6kV Max. load current: 1A Kind of package: Ammo Pack Case: TO92 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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STPS5L40 | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.5V Max. load current: 15A Max. forward impulse current: 150A Leakage current: 75mA Kind of package: Ammo Pack |
auf Bestellung 841 Stücke: Lieferzeit 14-21 Tag (e) |
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Z0405MH | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: IPAK Gate current: 5mA Max. forward impulse current: 16A Mounting: THT Kind of package: tube |
auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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SM15T30A | STMicroelectronics |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 1403 Stücke: Lieferzeit 14-21 Tag (e) |
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SM15T30CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 3337 Stücke: Lieferzeit 14-21 Tag (e) |
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ACS108-8TN-TR | STMicroelectronics |
Category: Triacs Description: Triac; 800V; 800mA; SOT223; Igt: 5mA Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 0.8A Case: SOT223 Gate current: 5mA Mounting: SMD |
auf Bestellung 65000 Stücke: Lieferzeit 14-21 Tag (e) |
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| VNS3NV04PTR-E | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOIC8 On-state resistance: 0.12Ω Active logical level: low Operating temperature: -40...150°C Integrated circuit features: thermal protection |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ33CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 38.6V Max. forward impulse current: 29A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
auf Bestellung 1192 Stücke: Lieferzeit 14-21 Tag (e) |
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STL120N10F8 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 125A Pulsed drain current: 500A Power dissipation: 150W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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| VL53L3CXV0DH/1 | STMicroelectronics |
Category: Unclassified Description: VL53L3CXV0DH/1 |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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STF20N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 30W Case: TO220FP On-state resistance: 0.19Ω Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MJD45H11T4 | STMicroelectronics |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 40 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 602 Stücke: Lieferzeit 14-21 Tag (e) |
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STP110N10F7 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 76A Pulsed drain current: 415A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Technology: STripFET™ F7 |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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BTB04-600SL | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; lighting application Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 10mA Features of semiconductor devices: lighting application Mounting: THT Kind of package: tube |
auf Bestellung 429 Stücke: Lieferzeit 14-21 Tag (e) |
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STP16N65M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.9A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 44A Gate charge: 19.5nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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STD16N65M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 110W Case: DPAK; TO252 On-state resistance: 0.32Ω Mounting: SMD Kind of channel: enhancement Gate charge: 19.5nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| STH315N10F7-2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 315W Case: H2PAK-2 On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 180nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STH315N10F7-6 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W Type of transistor: N-MOSFET Technology: STripFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 315W Case: TO263-7 On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 180nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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STP200N3LL | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Pulsed drain current: 480A Power dissipation: 176.5W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
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LM833DT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV Type of integrated circuit: operational amplifier Bandwidth: 15MHz Number of channels: 2 Mounting: SMT Voltage supply range: 5...30V DC Case: SO8 Operating temperature: -40...105°C Slew rate: 7V/μs Input offset voltage: 0.3mV Kind of package: reel; tape Integrated circuit features: low noise |
auf Bestellung 1625 Stücke: Lieferzeit 14-21 Tag (e) |
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MC1458IDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 2 Mounting: SMT Voltage supply range: ± 2.5...15V DC; 5...30V DC Case: SO8 Input offset voltage: 6mV Kind of package: reel; tape Input offset current: 300nA Slew rate: 0.8V/μs Operating temperature: -40...105°C Input bias current: 0.8µA Quiescent current: 2.3mA |
auf Bestellung 3313 Stücke: Lieferzeit 14-21 Tag (e) |
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MC1458DT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 2 Mounting: SMT Voltage supply range: ± 2.5...15V DC; 5...30V DC Case: SO8 Input offset voltage: 6mV Kind of package: reel; tape Input offset current: 300nA Slew rate: 0.8V/μs Operating temperature: 0...70°C Input bias current: 0.8µA Quiescent current: 2.3mA |
auf Bestellung 1922 Stücke: Lieferzeit 14-21 Tag (e) |
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LD39150PT-R | STMicroelectronics |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.4V Output voltage: 1.22...5V Output current: 1.5A Case: PPAK Mounting: SMD Manufacturer series: LD39150 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 1.5...3% Number of channels: 1 Input voltage: 2.5...6V |
auf Bestellung 2444 Stücke: Lieferzeit 14-21 Tag (e) |
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| LD39150PU-R | STMicroelectronics |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6 Operating temperature: -40...125°C Case: DFN6 Mounting: SMD Type of integrated circuit: voltage regulator Voltage drop: 0.4V Number of channels: 1 Output voltage: 1.22...5V Output current: 1.5A Tolerance: 1.5...3% Input voltage: 2.5...6V Manufacturer series: LD39150 Kind of voltage regulator: adjustable; LDO; linear Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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STF4N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 62 Stücke: Lieferzeit 14-21 Tag (e) |
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STP4N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| STL4N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 38W Case: PowerFLAT 5x6 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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STD4N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.7A Pulsed drain current: 12A Power dissipation: 60W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 1N5817 |
|
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
auf Bestellung 2599 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 313+ | 0.27 EUR |
| 363+ | 0.24 EUR |
| 394+ | 0.21 EUR |
| 550+ | 0.15 EUR |
| 642+ | 0.13 EUR |
| 728+ | 0.12 EUR |
| 1000+ | 0.1 EUR |
| 2000+ | 0.088 EUR |
| STM32F051K8U7TR |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C; SPI; USART x2
Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 8kB SRAM; 64kB FLASH
Number of 12bit A/D converters: 13
Number of 12bit D/A converters: 1
Number of 16bit timers: 7
Family: STM32F0
Kind of core: 32-bit
Number of 32bit timers: 1
Number of inputs/outputs: 27
Kind of architecture: Cortex M0
Kind of package: reel; tape
Operating temperature: -40...105°C
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C; SPI; USART x2
Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 8kB SRAM; 64kB FLASH
Number of 12bit A/D converters: 13
Number of 12bit D/A converters: 1
Number of 16bit timers: 7
Family: STM32F0
Kind of core: 32-bit
Number of 32bit timers: 1
Number of inputs/outputs: 27
Kind of architecture: Cortex M0
Kind of package: reel; tape
Operating temperature: -40...105°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STL10N60M6 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 48W
Case: PowerFLAT 5x6
On-state resistance: 0.66Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 8.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 48W
Case: PowerFLAT 5x6
On-state resistance: 0.66Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 8.8nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STM32F411RCT7 |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 256kBFLASH; ARM
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Interface: I2C; IrDA; MMC; SDIO; SPI; UART; USART; USB OTG
Kind of architecture: Cortex M4
Memory: 256kB FLASH
Operating temperature: -40...105°C
Family: ARM
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 256kBFLASH; ARM
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Interface: I2C; IrDA; MMC; SDIO; SPI; UART; USART; USB OTG
Kind of architecture: Cortex M4
Memory: 256kB FLASH
Operating temperature: -40...105°C
Family: ARM
Kind of core: 32-bit
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 160+ | 5.9 EUR |
| STP35N60DM2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Z0103MN 6AA4 |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STD13NM60ND |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 109W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 109W
Case: DPAK
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 24.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 109W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 109W
Case: DPAK
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 24.5nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TS912AIDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 8305 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 47+ | 1.83 EUR |
| 59+ | 1.46 EUR |
| 63+ | 1.36 EUR |
| 70+ | 1.23 EUR |
| 100+ | 1.07 EUR |
| 250+ | 0.98 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.86 EUR |
| 2500+ | 0.79 EUR |
| TS912IDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 5083 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 1.57 EUR |
| 63+ | 1.36 EUR |
| 69+ | 1.24 EUR |
| 79+ | 1.08 EUR |
| 86+ | 1 EUR |
| 100+ | 0.93 EUR |
| 250+ | 0.88 EUR |
| 2500+ | 0.81 EUR |
| TS912BIDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 1072 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 2.26 EUR |
| 45+ | 1.9 EUR |
| 49+ | 1.77 EUR |
| 54+ | 1.58 EUR |
| 100+ | 1.36 EUR |
| 250+ | 1.24 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.11 EUR |
| TS912ID |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 654 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 1.57 EUR |
| 64+ | 1.34 EUR |
| TS912IYDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS912AIYDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS912BIYDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷16VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷16VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD243C |
|
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BD677A |
|
Hersteller: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
auf Bestellung 1123 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 93+ | 0.92 EUR |
| 150+ | 0.57 EUR |
| 207+ | 0.42 EUR |
| 234+ | 0.37 EUR |
| 271+ | 0.31 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.26 EUR |
| M24C02-FMN6TP |
|
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -40...85°C
auf Bestellung 1831 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 417+ | 0.2 EUR |
| 439+ | 0.19 EUR |
| 463+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| STL15N65M5 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Case: PowerFLAT 5x6
On-state resistance: 375mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 52W
Gate charge: 22nC
Drain current: 10A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Case: PowerFLAT 5x6
On-state resistance: 375mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 52W
Gate charge: 22nC
Drain current: 10A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STFW40N60M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 34A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Power dissipation: 63W
Case: TO3PF
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 57nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 34A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Power dissipation: 63W
Case: TO3PF
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 57nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ACS102-6TA-TR |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; TO92; 5mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Case: TO92
Gate current: 5mA
Mounting: THT
Category: Triacs
Description: Triac; 600V; TO92; 5mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Case: TO92
Gate current: 5mA
Mounting: THT
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.29 EUR |
| STD8N60DM2 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 85W
Case: DPAK; TO252
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 4nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 85W
Case: DPAK; TO252
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STF18N60M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 255mΩ
Mounting: THT
Gate charge: 21.5nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 255mΩ
Mounting: THT
Gate charge: 21.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1.5KE400CARL |
|
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1900+ | 0.52 EUR |
| 1N5818 |
|
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
auf Bestellung 2464 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 239+ | 0.36 EUR |
| 407+ | 0.21 EUR |
| 463+ | 0.18 EUR |
| 544+ | 0.15 EUR |
| 642+ | 0.13 EUR |
| 715+ | 0.12 EUR |
| 747+ | 0.11 EUR |
| 1000+ | 0.11 EUR |
| 2000+ | 0.098 EUR |
| LD3985M28R |
|
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD3985
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2.5...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD3985
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2.5...6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZW50-27RL |
|
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.33 EUR |
| STW9NK90Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5.24 EUR |
| 24+ | 3.61 EUR |
| 25+ | 3.47 EUR |
| 30+ | 3.4 EUR |
| 90+ | 3.03 EUR |
| 120+ | 2.92 EUR |
| 150+ | 2.82 EUR |
| STB6N60M2 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 60W
Case: D2PAK
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 60W
Case: D2PAK
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 8nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STD6N60DM2 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 60W
Case: DPAK; TO252
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 60W
Case: DPAK; TO252
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STM32F439BGT6 |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP208; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; I2C x3; I2S x2; SAI; SDIO; SPI x6; USART x4; USB OTG
Kind of architecture: Cortex M4
Memory: 256kB SRAM; 1MB FLASH
Family: STM32F4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP208; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; I2C x3; I2S x2; SAI; SDIO; SPI x6; USART x4; USB OTG
Kind of architecture: Cortex M4
Memory: 256kB SRAM; 1MB FLASH
Family: STM32F4
Kind of core: 32-bit
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.61 EUR |
| 10+ | 15.32 EUR |
| STM32F427ZIT7 |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 2MB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 2MB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 20.79 EUR |
| 10+ | 17.39 EUR |
| 25+ | 15.99 EUR |
| SM6T36A |
|
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 295+ | 0.29 EUR |
| 379+ | 0.23 EUR |
| 432+ | 0.2 EUR |
| 550+ | 0.15 EUR |
| 582+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| 2500+ | 0.12 EUR |
| 5000+ | 0.12 EUR |
| Z0107MA 2AL2 |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 8A
Gate current: 5mA
Max. off-state voltage: 0.6kV
Max. load current: 1A
Kind of package: Ammo Pack
Case: TO92
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 8A
Gate current: 5mA
Max. off-state voltage: 0.6kV
Max. load current: 1A
Kind of package: Ammo Pack
Case: TO92
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STPS5L40 |
|
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Leakage current: 75mA
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Leakage current: 75mA
Kind of package: Ammo Pack
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 358+ | 0.24 EUR |
| 435+ | 0.19 EUR |
| 575+ | 0.14 EUR |
| Z0405MH |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 16A
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 16A
Mounting: THT
Kind of package: tube
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 139+ | 0.61 EUR |
| 188+ | 0.45 EUR |
| 235+ | 0.36 EUR |
| 270+ | 0.32 EUR |
| SM15T30A |
|
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1403 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 57+ | 1.51 EUR |
| 81+ | 1.06 EUR |
| 94+ | 0.92 EUR |
| 125+ | 0.68 EUR |
| 137+ | 0.62 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.5 EUR |
| SM15T30CA |
|
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 3337 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 143+ | 0.6 EUR |
| 159+ | 0.54 EUR |
| 172+ | 0.5 EUR |
| 2500+ | 0.44 EUR |
| ACS108-8TN-TR |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 800mA; SOT223; Igt: 5mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Case: SOT223
Gate current: 5mA
Mounting: SMD
Category: Triacs
Description: Triac; 800V; 800mA; SOT223; Igt: 5mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Case: SOT223
Gate current: 5mA
Mounting: SMD
auf Bestellung 65000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.29 EUR |
| VNS3NV04PTR-E |
|
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOIC8
On-state resistance: 0.12Ω
Active logical level: low
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOIC8
On-state resistance: 0.12Ω
Active logical level: low
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.12 EUR |
| SMCJ33CA-TR |
|
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
auf Bestellung 1192 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 77+ | 1.11 EUR |
| 103+ | 0.83 EUR |
| 139+ | 0.61 EUR |
| 156+ | 0.55 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.39 EUR |
| STL120N10F8 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 3.39 EUR |
| 28+ | 3.15 EUR |
| 36+ | 2.38 EUR |
| 40+ | 2.18 EUR |
| 75+ | 2.05 EUR |
| VL53L3CXV0DH/1 |
|
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4500+ | 3.89 EUR |
| STF20N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD45H11T4 |
|
Hersteller: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 602 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 1.45 EUR |
| 95+ | 0.9 EUR |
| 137+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| STP110N10F7 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 4.19 EUR |
| 31+ | 2.77 EUR |
| 50+ | 2.31 EUR |
| BTB04-600SL |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; lighting application
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Features of semiconductor devices: lighting application
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; lighting application
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Features of semiconductor devices: lighting application
Mounting: THT
Kind of package: tube
auf Bestellung 429 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.74 EUR |
| 71+ | 1.21 EUR |
| 82+ | 1.05 EUR |
| 111+ | 0.77 EUR |
| 124+ | 0.69 EUR |
| STP16N65M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate charge: 19.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate charge: 19.5nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STD16N65M2 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.32Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.32Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19.5nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STH315N10F7-2 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: H2PAK-2
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: H2PAK-2
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STH315N10F7-6 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: TO263-7
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: TO263-7
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STP200N3LL |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 176.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 176.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 2.28 EUR |
| 51+ | 1.69 EUR |
| 59+ | 1.45 EUR |
| 100+ | 1.33 EUR |
| LM833DT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 5...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 5...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
auf Bestellung 1625 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 162+ | 0.52 EUR |
| 197+ | 0.43 EUR |
| 229+ | 0.37 EUR |
| 274+ | 0.31 EUR |
| 288+ | 0.3 EUR |
| MC1458IDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Case: SO8
Input offset voltage: 6mV
Kind of package: reel; tape
Input offset current: 300nA
Slew rate: 0.8V/μs
Operating temperature: -40...105°C
Input bias current: 0.8µA
Quiescent current: 2.3mA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Case: SO8
Input offset voltage: 6mV
Kind of package: reel; tape
Input offset current: 300nA
Slew rate: 0.8V/μs
Operating temperature: -40...105°C
Input bias current: 0.8µA
Quiescent current: 2.3mA
auf Bestellung 3313 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 139+ | 0.61 EUR |
| 166+ | 0.51 EUR |
| 184+ | 0.46 EUR |
| 211+ | 0.4 EUR |
| 242+ | 0.36 EUR |
| 262+ | 0.32 EUR |
| 2500+ | 0.29 EUR |
| MC1458DT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Case: SO8
Input offset voltage: 6mV
Kind of package: reel; tape
Input offset current: 300nA
Slew rate: 0.8V/μs
Operating temperature: 0...70°C
Input bias current: 0.8µA
Quiescent current: 2.3mA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Case: SO8
Input offset voltage: 6mV
Kind of package: reel; tape
Input offset current: 300nA
Slew rate: 0.8V/μs
Operating temperature: 0...70°C
Input bias current: 0.8µA
Quiescent current: 2.3mA
auf Bestellung 1922 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 109+ | 0.79 EUR |
| 133+ | 0.64 EUR |
| 150+ | 0.57 EUR |
| 174+ | 0.49 EUR |
| 208+ | 0.4 EUR |
| 221+ | 0.38 EUR |
| 500+ | 0.36 EUR |
| LD39150PT-R |
|
Hersteller: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: PPAK
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: PPAK
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
auf Bestellung 2444 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 54+ | 1.59 EUR |
| 74+ | 1.15 EUR |
| 82+ | 1.05 EUR |
| 100+ | 0.93 EUR |
| 250+ | 0.88 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.83 EUR |
| LD39150PU-R |
|
Hersteller: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6
Operating temperature: -40...125°C
Case: DFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Number of channels: 1
Output voltage: 1.22...5V
Output current: 1.5A
Tolerance: 1.5...3%
Input voltage: 2.5...6V
Manufacturer series: LD39150
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6
Operating temperature: -40...125°C
Case: DFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Number of channels: 1
Output voltage: 1.22...5V
Output current: 1.5A
Tolerance: 1.5...3%
Input voltage: 2.5...6V
Manufacturer series: LD39150
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STF4N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 2.28 EUR |
| 62+ | 1.38 EUR |
| STP4N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STL4N80K5 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STD4N80K5 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Pulsed drain current: 12A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Pulsed drain current: 12A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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