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VND5T100LAJTR-E STMicroelectronics en.DM00058385.pdf Category: Integrated circuits - Unclassified
Description: VND5T100LAJTR-E
auf Bestellung 92500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+2.42 EUR
Mindestbestellmenge: 2500
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BD678A BD678A STMicroelectronics en.CD00000939.pdf Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Produkt ist nicht verfügbar
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STM32L452VET6 STMicroelectronics stm32l452cc.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP100; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 160kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of 12bit D/A converters: 1
Family: STM32L4
Kind of core: 32-bit
Number of comparators: 2
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10+7.39 EUR
11+6.76 EUR
25+6.23 EUR
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DA108S1RL DA108S1RL STMicroelectronics da108s1.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 12A; 0.73W; bidirectional; SO8; Ch: 4; ESD
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Type of diode: TVS array
Leakage current: 2µA
Peak pulse power dissipation: 0.73W
Number of channels: 4
Max. forward impulse current: 12A
Max. off-state voltage: 18V
Case: SO8
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VIPER53SPTR-E STMicroelectronics viper53-e.pdf Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; PowerSO10; 2A; 620V; Ch: 1
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: PowerSO10
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: reel; tape
Supply voltage: 10.2...19V
Produkt ist nicht verfügbar
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VIPER53EDIP-E VIPER53EDIP-E STMicroelectronics en.CD00084589.pdf Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; DIP8; 2A; 620V; Ch: 1; 7.5÷19VDC
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: DIP8
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: THT
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: tube
Supply voltage: 10.2...19V
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VIPER53ESP-E STMicroelectronics en.CD00084589.pdf Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; PowerSO10; 2A; 620V; Ch: 1
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: PowerSO10
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: tube
Supply voltage: 10.2...19V
Produkt ist nicht verfügbar
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T1210-800G-TR T1210-800G-TR STMicroelectronics t1210.pdf Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
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54+1.34 EUR
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ST1510FX STMicroelectronics st1510fx.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1.5kV; 12A; 62W; TO3PF
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1.5kV
Collector current: 12A
Power dissipation: 62W
Case: TO3PF
Mounting: THT
Kind of package: tube
auf Bestellung 60 Stücke:
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21+3.56 EUR
25+2.96 EUR
30+2.72 EUR
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LDK320AM36R LDK320AM36R STMicroelectronics ldk320.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.6V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LDK320
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.5%
Number of channels: 1
Input voltage: 2.5...18V
Produkt ist nicht verfügbar
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MJD32CT4 MJD32CT4 STMicroelectronics MJD32C.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2155 Stücke:
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71+1.02 EUR
104+0.69 EUR
169+0.42 EUR
250+0.35 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 71
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MJD32CT4-A STMicroelectronics mjd31ct4-a.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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ACS108-8TN-TR STMicroelectronics acs108-8tn.pdf Category: Triacs
Description: ACS108-8TN-TR
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STW65N023M9-4 STMicroelectronics stw65n023m9-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
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STWA65N023M9 STMicroelectronics STWA65N023M9.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 58A; Idm: 440A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58A
Pulsed drain current: 440A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M9
Produkt ist nicht verfügbar
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LD56100DPU30R LD56100DPU30R STMicroelectronics ld56100.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3V; 1A; DFN8; SMD; LD56100; 1÷2%
Kind of voltage regulator: fixed; LDO
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Tolerance: 1...2%
Voltage drop: 0.165V
Output current: 1A
Input voltage: 1.8...5.5V
Number of channels: 2
Output voltage: 3V
Manufacturer series: LD56100
Case: DFN8
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LD56100DPU33R LD56100DPU33R STMicroelectronics ld56100.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3.3V; 1A; DFN8; SMD; LD56100; 1÷2%
Kind of voltage regulator: fixed; LDO
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Tolerance: 1...2%
Voltage drop: 0.155V
Output current: 1A
Input voltage: 1.8...5.5V
Number of channels: 2
Output voltage: 3.3V
Manufacturer series: LD56100
Case: DFN8
Produkt ist nicht verfügbar
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VNN3NV04PTR-E VNN3NV04PTR-E STMicroelectronics vnn3nv04p-e.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; SMD; SOT223
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 0.12Ω
Number of channels: 1
Output current: 3.5A
Case: SOT223
Output voltage: 36V
Kind of integrated circuit: low-side
auf Bestellung 869 Stücke:
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36+2.03 EUR
54+1.33 EUR
61+1.19 EUR
67+1.07 EUR
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VND3NV04TR-E STMicroelectronics en.CD00002208.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; SMD; DPAK; tube
Type of integrated circuit: power switch
Kind of package: tube
Mounting: SMD
On-state resistance: 0.12Ω
Number of channels: 1
Output current: 3.5A
Case: DPAK
Output voltage: 40V
Kind of integrated circuit: low-side
Produkt ist nicht verfügbar
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VNS3NV04PTR-E STMicroelectronics en.CD00232418.pdf Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
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2500+0.86 EUR
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STD40NF10 STMicroelectronics en.CD00291761.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 125W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 125W
Case: DPAK; TO252
On-state resistance: 28mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
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STD40NF10 STMicroelectronics en.CD00291761.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 50A; 125W; DPAK
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
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SMCJ33CA-TR SMCJ33CA-TR STMicroelectronics SMCJ33CA-TR.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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90+0.8 EUR
117+0.61 EUR
153+0.47 EUR
172+0.42 EUR
250+0.37 EUR
500+0.33 EUR
1000+0.31 EUR
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SMCJ30CA-TR SMCJ30CA-TR STMicroelectronics SMCJ33CA-TR.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 35.1V; 32A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 35.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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167+0.43 EUR
188+0.38 EUR
200+0.36 EUR
230+0.31 EUR
242+0.3 EUR
500+0.27 EUR
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SMCJ26A-TR SMCJ26A-TR STMicroelectronics SMCJ33CA-TR.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30.4V; 37A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
auf Bestellung 475 Stücke:
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107+0.67 EUR
123+0.58 EUR
133+0.54 EUR
170+0.42 EUR
200+0.38 EUR
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SMCJ40CA-TR SMCJ40CA-TR STMicroelectronics SMCJ33CA-TR.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 46.7V; 24A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 46.7V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
auf Bestellung 1036 Stücke:
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120+0.6 EUR
135+0.53 EUR
143+0.5 EUR
153+0.47 EUR
157+0.46 EUR
170+0.42 EUR
500+0.34 EUR
1000+0.31 EUR
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SMCJ28A-TR SMCJ28A-TR STMicroelectronics SMCJ33CA-TR.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 32.7V; 34A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 32.7V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
auf Bestellung 790 Stücke:
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143+0.5 EUR
157+0.46 EUR
166+0.43 EUR
194+0.37 EUR
208+0.34 EUR
250+0.31 EUR
500+0.29 EUR
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STL120N10F8 STMicroelectronics en.DM00852148.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VL53L3CXV0DH/1 STMicroelectronics vl53l3cx.pdf Category: Unclassified
Description: VL53L3CXV0DH/1
auf Bestellung 4500 Stücke:
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4500+3.33 EUR
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STM32H7A3RGT6 STMicroelectronics stm32h7a3ag.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 280MHz; LQFP64; 1.62÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 280MHz
Mounting: SMD
Number of inputs/outputs: 49
Case: LQFP64
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 1MB FLASH; 1.4MB SRAM
Operating temperature: -40...85°C
Number of comparators: 1
Family: STM32H7
Kind of core: 32-bit
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LE33CZ LE33CZ STMicroelectronics LExxAB%2CLExxC.pdf description Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3.3V; 150mA; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 0.2V
Output voltage: 3.3V
Output current: 0.15A
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
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LE33CZ-TR LE33CZ-TR STMicroelectronics lexx.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 3.3V
Output current: 0.1A
Case: TO92
Mounting: THT
Manufacturer series: LEXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...18V
auf Bestellung 1502 Stücke:
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109+0.66 EUR
153+0.47 EUR
165+0.43 EUR
182+0.39 EUR
250+0.37 EUR
500+0.36 EUR
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STF20N65M5 STMicroelectronics en.DM00076416.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
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STF3LN80K5 STF3LN80K5 STMicroelectronics en.DM00175100.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.25Ω
Mounting: THT
Gate charge: 2.63nC
Kind of package: tube
Kind of channel: enhancement
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25+2.86 EUR
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STGWT60H65FB STMicroelectronics en.DM00094070.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Produkt ist nicht verfügbar
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STGWT60H65DFB STGWT60H65DFB STMicroelectronics STGWx60H65DFB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 68 Stücke:
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15+4.99 EUR
16+4.49 EUR
17+4.29 EUR
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STGW60H65DRF STMicroelectronics en.DM00039960.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 420W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 420W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 217nC
Kind of package: tube
Produkt ist nicht verfügbar
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STGWA60H65DFB STMicroelectronics STGWx60H65DFB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STD30NF06LAG STMicroelectronics en.DM00321713.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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STW75N60DM6 STMicroelectronics stw75n60dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
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MJD44H11T4 MJD44H11T4 STMicroelectronics MJD44H11_MJD45H11.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 16A
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MJD44H11T4-A STMicroelectronics en.CD00244188.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 16A
Application: automotive industry
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D44H11 D44H11 STMicroelectronics D44H11.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
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MJB44H11T4-A STMicroelectronics mjb44h11t4-a.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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D45H11 D45H11 STMicroelectronics D45H11.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; TO220AB
Mounting: THT
Collector current: 10A
Kind of package: tube
Type of transistor: PNP
Case: TO220AB
Collector-emitter voltage: 80V
Polarisation: bipolar
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MJD45H11T4 MJD45H11T4 STMicroelectronics MJD44H11_MJD45H11.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 40
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
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STP4NK80ZFP STP4NK80ZFP STMicroelectronics STP4NK80Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STD1NK60T4 STD1NK60T4 STMicroelectronics std1nk60t4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Technology: SuperMesh™
Drain current: 1A
Power dissipation: 30W
On-state resistance: 8.5Ω
Gate-source voltage: ±30V
Kind of package: reel; tape
Drain-source voltage: 600V
Case: DPAK
Kind of channel: enhancement
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STD1NK60-1 STD1NK60-1 STMicroelectronics STD1NK60-1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Technology: SuperMesh™
Drain current: 0.63A
Power dissipation: 30W
On-state resistance: 8.5Ω
Gate-source voltage: ±30V
Kind of package: tube
Drain-source voltage: 600V
Case: I2PAK
Kind of channel: enhancement
Version: ESD
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STS1NK60Z STMicroelectronics en.CD00003308.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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STL30N10F7 STMicroelectronics en.DM00098053.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 120A; 4.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 4.8W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
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TSC215ICT STMicroelectronics tsc215.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.7÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Kind of integrated circuit: current sense
Case: SC70-6
Number of channels: single; 1
Integrated circuit features: zero-drift
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 20nA
Input bias current: 35µA
Slew rate: 0.42V/μs
Voltage supply range: 2.7...26V DC
Bandwidth: 60kHz
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TSC215IYCT STMicroelectronics tsc215.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.7÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Kind of integrated circuit: current sense
Case: SC70-6
Number of channels: single; 1
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 20nA
Input bias current: 35µA
Quiescent current: 115µA
Input offset voltage: 4.5mV
Slew rate: 0.42V/μs
Voltage supply range: 2.7...26V DC
Bandwidth: 60kHz
Application: automotive industry
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TYN612RG TYN612RG STMicroelectronics TYN612.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
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TYN612MRG TYN612MRG STMicroelectronics TYN612M.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 110A
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TYN612MFP TYN612MFP STMicroelectronics TYN612M.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
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TYN612TRG STMicroelectronics en.CD00002269.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
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L4984DTR STMicroelectronics en.DM00081769.pdf Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; SSOP10; 10.3÷22.5V
Type of integrated circuit: driver
Kind of integrated circuit: PFC controller
Case: SSOP10
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Kind of package: reel; tape
Supply voltage: 10.3...22.5V
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STW31N65M5 STW31N65M5 STMicroelectronics STW31N65M5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 13.9A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.9A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STP31N65M5 STP31N65M5 STMicroelectronics en.DM00049148.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 88A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 88A
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VND5T100LAJTR-E en.DM00058385.pdf
Hersteller: STMicroelectronics
Category: Integrated circuits - Unclassified
Description: VND5T100LAJTR-E
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BD678A en.CD00000939.pdf
BD678A
Hersteller: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Produkt ist nicht verfügbar
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STM32L452VET6 stm32l452cc.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP100; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 160kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of 12bit D/A converters: 1
Family: STM32L4
Kind of core: 32-bit
Number of comparators: 2
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DA108S1RL da108s1.pdf
DA108S1RL
Hersteller: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 12A; 0.73W; bidirectional; SO8; Ch: 4; ESD
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Type of diode: TVS array
Leakage current: 2µA
Peak pulse power dissipation: 0.73W
Number of channels: 4
Max. forward impulse current: 12A
Max. off-state voltage: 18V
Case: SO8
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VIPER53SPTR-E viper53-e.pdf
Hersteller: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; PowerSO10; 2A; 620V; Ch: 1
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: PowerSO10
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: reel; tape
Supply voltage: 10.2...19V
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VIPER53EDIP-E en.CD00084589.pdf
VIPER53EDIP-E
Hersteller: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; DIP8; 2A; 620V; Ch: 1; 7.5÷19VDC
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: DIP8
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: THT
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: tube
Supply voltage: 10.2...19V
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VIPER53ESP-E en.CD00084589.pdf
Hersteller: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; PowerSO10; 2A; 620V; Ch: 1
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: PowerSO10
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: tube
Supply voltage: 10.2...19V
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T1210-800G-TR t1210.pdf
T1210-800G-TR
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
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35+2.1 EUR
54+1.34 EUR
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ST1510FX st1510fx.pdf
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1.5kV; 12A; 62W; TO3PF
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1.5kV
Collector current: 12A
Power dissipation: 62W
Case: TO3PF
Mounting: THT
Kind of package: tube
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21+3.56 EUR
25+2.96 EUR
30+2.72 EUR
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LDK320AM36R ldk320.pdf
LDK320AM36R
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.6V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LDK320
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.5%
Number of channels: 1
Input voltage: 2.5...18V
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MJD32CT4 MJD32C.pdf
MJD32CT4
Hersteller: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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Anzahl Preis
71+1.02 EUR
104+0.69 EUR
169+0.42 EUR
250+0.35 EUR
500+0.31 EUR
1000+0.28 EUR
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MJD32CT4-A mjd31ct4-a.pdf
Hersteller: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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ACS108-8TN-TR acs108-8tn.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: ACS108-8TN-TR
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3000+0.25 EUR
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STW65N023M9-4 stw65n023m9-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Produkt ist nicht verfügbar
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STWA65N023M9 STWA65N023M9.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 58A; Idm: 440A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58A
Pulsed drain current: 440A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M9
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LD56100DPU30R ld56100.pdf
LD56100DPU30R
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3V; 1A; DFN8; SMD; LD56100; 1÷2%
Kind of voltage regulator: fixed; LDO
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Tolerance: 1...2%
Voltage drop: 0.165V
Output current: 1A
Input voltage: 1.8...5.5V
Number of channels: 2
Output voltage: 3V
Manufacturer series: LD56100
Case: DFN8
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LD56100DPU33R ld56100.pdf
LD56100DPU33R
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3.3V; 1A; DFN8; SMD; LD56100; 1÷2%
Kind of voltage regulator: fixed; LDO
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Tolerance: 1...2%
Voltage drop: 0.155V
Output current: 1A
Input voltage: 1.8...5.5V
Number of channels: 2
Output voltage: 3.3V
Manufacturer series: LD56100
Case: DFN8
Produkt ist nicht verfügbar
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VNN3NV04PTR-E vnn3nv04p-e.pdf
VNN3NV04PTR-E
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; SMD; SOT223
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 0.12Ω
Number of channels: 1
Output current: 3.5A
Case: SOT223
Output voltage: 36V
Kind of integrated circuit: low-side
auf Bestellung 869 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
54+1.33 EUR
61+1.19 EUR
67+1.07 EUR
Mindestbestellmenge: 36
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VND3NV04TR-E en.CD00002208.pdf
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; SMD; DPAK; tube
Type of integrated circuit: power switch
Kind of package: tube
Mounting: SMD
On-state resistance: 0.12Ω
Number of channels: 1
Output current: 3.5A
Case: DPAK
Output voltage: 40V
Kind of integrated circuit: low-side
Produkt ist nicht verfügbar
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VNS3NV04PTR-E en.CD00232418.pdf
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.86 EUR
Mindestbestellmenge: 2500
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STD40NF10 en.CD00291761.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 125W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 125W
Case: DPAK; TO252
On-state resistance: 28mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
Produkt ist nicht verfügbar
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STD40NF10 en.CD00291761.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 50A; 125W; DPAK
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.62 EUR
Mindestbestellmenge: 2500
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SMCJ33CA-TR SMCJ33CA-TR.pdf
SMCJ33CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
auf Bestellung 2461 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
117+0.61 EUR
153+0.47 EUR
172+0.42 EUR
250+0.37 EUR
500+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 90
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SMCJ30CA-TR SMCJ33CA-TR.pdf
SMCJ30CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 35.1V; 32A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 35.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
auf Bestellung 1066 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
188+0.38 EUR
200+0.36 EUR
230+0.31 EUR
242+0.3 EUR
500+0.27 EUR
Mindestbestellmenge: 167
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SMCJ26A-TR SMCJ33CA-TR.pdf
SMCJ26A-TR
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30.4V; 37A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
123+0.58 EUR
133+0.54 EUR
170+0.42 EUR
200+0.38 EUR
Mindestbestellmenge: 107
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SMCJ40CA-TR SMCJ33CA-TR.pdf
SMCJ40CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 46.7V; 24A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 46.7V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
auf Bestellung 1036 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
135+0.53 EUR
143+0.5 EUR
153+0.47 EUR
157+0.46 EUR
170+0.42 EUR
500+0.34 EUR
1000+0.31 EUR
Mindestbestellmenge: 120
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SMCJ28A-TR SMCJ33CA-TR.pdf
SMCJ28A-TR
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 32.7V; 34A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 32.7V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
157+0.46 EUR
166+0.43 EUR
194+0.37 EUR
208+0.34 EUR
250+0.31 EUR
500+0.29 EUR
Mindestbestellmenge: 143
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STL120N10F8 en.DM00852148.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VL53L3CXV0DH/1 vl53l3cx.pdf
Hersteller: STMicroelectronics
Category: Unclassified
Description: VL53L3CXV0DH/1
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4500+3.33 EUR
Mindestbestellmenge: 4500
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STM32H7A3RGT6 stm32h7a3ag.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 280MHz; LQFP64; 1.62÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 280MHz
Mounting: SMD
Number of inputs/outputs: 49
Case: LQFP64
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 1MB FLASH; 1.4MB SRAM
Operating temperature: -40...85°C
Number of comparators: 1
Family: STM32H7
Kind of core: 32-bit
Produkt ist nicht verfügbar
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LE33CZ description LExxAB%2CLExxC.pdf
LE33CZ
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3.3V; 150mA; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 0.2V
Output voltage: 3.3V
Output current: 0.15A
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
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LE33CZ-TR lexx.pdf
LE33CZ-TR
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 3.3V
Output current: 0.1A
Case: TO92
Mounting: THT
Manufacturer series: LEXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...18V
auf Bestellung 1502 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
153+0.47 EUR
165+0.43 EUR
182+0.39 EUR
250+0.37 EUR
500+0.36 EUR
Mindestbestellmenge: 109
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STF20N65M5 en.DM00076416.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STF3LN80K5 en.DM00175100.pdf
STF3LN80K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.25Ω
Mounting: THT
Gate charge: 2.63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
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STGWT60H65FB en.DM00094070.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Produkt ist nicht verfügbar
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STGWT60H65DFB STGWx60H65DFB.pdf
STGWT60H65DFB
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.99 EUR
16+4.49 EUR
17+4.29 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
STGW60H65DRF en.DM00039960.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 420W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 420W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 217nC
Kind of package: tube
Produkt ist nicht verfügbar
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STGWA60H65DFB STGWx60H65DFB.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STD30NF06LAG en.DM00321713.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.42 EUR
Mindestbestellmenge: 2500
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STW75N60DM6 stw75n60dm6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MJD44H11T4 MJD44H11_MJD45H11.pdf
MJD44H11T4
Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 16A
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
90+0.8 EUR
130+0.55 EUR
152+0.47 EUR
500+0.36 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11T4-A en.CD00244188.pdf
Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 16A
Application: automotive industry
Produkt ist nicht verfügbar
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D44H11 D44H11.pdf
D44H11
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
81+0.88 EUR
93+0.77 EUR
103+0.7 EUR
113+0.63 EUR
200+0.61 EUR
Mindestbestellmenge: 51
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MJB44H11T4-A mjb44h11t4-a.pdf
Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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D45H11 D45H11.pdf
D45H11
Hersteller: STMicroelectronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; TO220AB
Mounting: THT
Collector current: 10A
Kind of package: tube
Type of transistor: PNP
Case: TO220AB
Collector-emitter voltage: 80V
Polarisation: bipolar
auf Bestellung 378 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
72+1 EUR
90+0.8 EUR
100+0.73 EUR
250+0.65 EUR
Mindestbestellmenge: 43
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MJD45H11T4 MJD44H11_MJD45H11.pdf
MJD45H11T4
Hersteller: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 40
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
auf Bestellung 914 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
98+0.74 EUR
138+0.52 EUR
500+0.41 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
STP4NK80ZFP STP4NK80Z.pdf
STP4NK80ZFP
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
41+1.76 EUR
44+1.66 EUR
49+1.49 EUR
50+1.43 EUR
Mindestbestellmenge: 37
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STD1NK60T4 std1nk60t4.pdf
STD1NK60T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Technology: SuperMesh™
Drain current: 1A
Power dissipation: 30W
On-state resistance: 8.5Ω
Gate-source voltage: ±30V
Kind of package: reel; tape
Drain-source voltage: 600V
Case: DPAK
Kind of channel: enhancement
auf Bestellung 466 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
75+0.96 EUR
95+0.76 EUR
106+0.68 EUR
Mindestbestellmenge: 56
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STD1NK60-1 STD1NK60-1.pdf
STD1NK60-1
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Technology: SuperMesh™
Drain current: 0.63A
Power dissipation: 30W
On-state resistance: 8.5Ω
Gate-source voltage: ±30V
Kind of package: tube
Drain-source voltage: 600V
Case: I2PAK
Kind of channel: enhancement
Version: ESD
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
141+0.51 EUR
173+0.41 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
STS1NK60Z en.CD00003308.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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STL30N10F7 en.DM00098053.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 120A; 4.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 4.8W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSC215ICT tsc215.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.7÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Kind of integrated circuit: current sense
Case: SC70-6
Number of channels: single; 1
Integrated circuit features: zero-drift
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 20nA
Input bias current: 35µA
Slew rate: 0.42V/μs
Voltage supply range: 2.7...26V DC
Bandwidth: 60kHz
Produkt ist nicht verfügbar
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TSC215IYCT tsc215.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.7÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Kind of integrated circuit: current sense
Case: SC70-6
Number of channels: single; 1
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 20nA
Input bias current: 35µA
Quiescent current: 115µA
Input offset voltage: 4.5mV
Slew rate: 0.42V/μs
Voltage supply range: 2.7...26V DC
Bandwidth: 60kHz
Application: automotive industry
Produkt ist nicht verfügbar
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TYN612RG TYN612.pdf
TYN612RG
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
108+0.67 EUR
115+0.62 EUR
Mindestbestellmenge: 97
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TYN612MRG TYN612M.pdf
TYN612MRG
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 110A
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
84+0.86 EUR
Mindestbestellmenge: 53
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TYN612MFP TYN612M.pdf
TYN612MFP
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.5 EUR
79+0.92 EUR
91+0.79 EUR
102+0.71 EUR
113+0.64 EUR
Mindestbestellmenge: 48
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TYN612TRG en.CD00002269.pdf
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Produkt ist nicht verfügbar
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L4984DTR en.DM00081769.pdf
Hersteller: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; SSOP10; 10.3÷22.5V
Type of integrated circuit: driver
Kind of integrated circuit: PFC controller
Case: SSOP10
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Kind of package: reel; tape
Supply voltage: 10.3...22.5V
Produkt ist nicht verfügbar
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STW31N65M5 STW31N65M5.pdf
STW31N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 13.9A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.9A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.4 EUR
19+3.88 EUR
23+3.13 EUR
Mindestbestellmenge: 17
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STP31N65M5 en.DM00049148.pdf
STP31N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 88A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 88A
Produkt ist nicht verfügbar
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