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STW10N95K5 STMicroelectronics stw10n95k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5A; Idm: 32A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 32A
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STW10N105K5 STMicroelectronics stw10n105k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3.78A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
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STGB6NC60HDT4 STMicroelectronics en.CD00058424.pdf description Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB40V60F STMicroelectronics en.DM00086251.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
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STGB10M65DF2 STMicroelectronics en.DM00157911.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB40H65FB STMicroelectronics en.DM00306732.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 0.21µC
Kind of package: reel; tape
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STGB50H65FB2 STMicroelectronics Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
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STGB20M65DF2 STMicroelectronics en.DM00244727.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 166W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 166W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB25N36LZAG STMicroelectronics Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
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STGB5H60DF STMicroelectronics en.DM00149621.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB6M65DF2 STMicroelectronics en.DM00250133.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB10H60DF STMicroelectronics en.DM00092752.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB10NB40LZT4 STMicroelectronics en.DM00372350.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
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STGB14NC60KDT4 STGB14NC60KDT4 STMicroelectronics stgb14nc60kdt4.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB15M65DF2 STMicroelectronics en.DM00096991.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 136W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20H60DF STMicroelectronics en.DM00066598.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20H65FB2 STMicroelectronics stgb20h65fb2.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
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STGB20N45LZAG STMicroelectronics en.DM00242156.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: automotive industry
Version: ESD
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STGB20NB41LZT4 STMicroelectronics en.CD00003294.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 200W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 20A
Power dissipation: 200W
Case: D2PAK
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry; ignition systems
Version: ESD
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STGB20V60DF STMicroelectronics en.DM00079434.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB25N40LZAG STMicroelectronics STGB25N40LZAG.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
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STGB30M65DF2 STMicroelectronics STGB30M65DF2.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB30V60DF STGB30V60DF STMicroelectronics stgb30v60df.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 163nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB4M65DF2 STMicroelectronics Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 86W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 86W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB7H60DF STMicroelectronics en.DM00164492.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB7NC60HDT4 STMicroelectronics en.CD00003695.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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VNP35N07-E VNP35N07-E STMicroelectronics vnb35n07-e.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 35A; Ch: 1; THT; TO220-3; tube
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 35A
Number of channels: 1
Mounting: THT
Case: TO220-3
On-state resistance: 28mΩ
Kind of package: tube
Output voltage: 70V
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14+5.21 EUR
18+4.06 EUR
19+3.85 EUR
100+3.70 EUR
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L9362013TR STMicroelectronics l9362.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; Ch: 4; SMD; PowerSSO36; reel,tape; 3MHz
Mounting: SMD
Operating temperature: -40...150°C
Case: PowerSSO36
Supply voltage: 4.5...5.5V
Frequency: 3MHz
Type of integrated circuit: power switch
Number of channels: 4
Kind of package: reel; tape
Kind of integrated circuit: low-side
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SMAJ48A-TR SMAJ48A-TR STMicroelectronics SMAJxxX_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 23A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 23A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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272+0.26 EUR
325+0.22 EUR
355+0.20 EUR
695+0.10 EUR
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STL260N4F7 STMicroelectronics stl260n4f7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Case: PowerFLAT 5x6
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 72nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
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STL260N4LF7 STMicroelectronics stl260n4lf7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Case: PowerFLAT 5x6
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 42nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
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STWA88N65M5 STMicroelectronics stwa88n65m5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 50.5A; Idm: 336A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.5A
Pulsed drain current: 336A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
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SMCJ15A-TR SMCJ15A-TR STMicroelectronics smcj15a.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.6V; 64A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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MC3303DT MC3303DT STMicroelectronics mc3303.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 3÷36V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 6mV
Bandwidth: 1MHz
Integrated circuit features: low power
Kind of package: reel; tape
Slew rate: 0.5V/μs
Input offset current: 200nA
Input bias current: 0.8µA
Operating voltage: 3...36V
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VN820 VN820 STMicroelectronics VN820.pdf Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 9A; Pentawatt
Type of integrated circuit: power switch
Case: Pentawatt
Output current: 9A
Number of channels: 1
Kind of integrated circuit: high-side
Mounting: THT
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SCT070H120G3AG STMicroelectronics sct070h120g3ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 100A; 223W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 100A
Power dissipation: 223W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
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SCT070W120G3-4AG STMicroelectronics sct070w120g3-4ag.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 116A; 236W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 116A
Power dissipation: 236W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 87mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Version: Automotive
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SMAJ28A-TR SMAJ28A-TR STMicroelectronics SMAJxxX_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1V; 39A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
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152+0.47 EUR
227+0.32 EUR
283+0.25 EUR
315+0.23 EUR
705+0.10 EUR
747+0.10 EUR
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FERD20S100STS FERD20S100STS STMicroelectronics FERD20S100S.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 20A; tube; Ifsm: 220A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. forward voltage: 0.415V
Max. load current: 40A
Max. forward impulse current: 220A
Kind of package: tube
Heatsink thickness: 0.51...0.6mm
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66+1.09 EUR
79+0.90 EUR
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BD139 BD139 STMicroelectronics BD139-10-STMicroelectronics.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: SOT32
Current gain: 25...250
Mounting: THT
Kind of package: tube
Frequency: 50MHz
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LD2981ABU50TR LD2981ABU50TR STMicroelectronics LD2981.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.18V
Output voltage: 5V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.75%
Number of channels: 1
Input voltage: 2.5...16V
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LD2981CU50TR LD2981CU50TR STMicroelectronics LD2981.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.18V
Output voltage: 5V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.75%
Number of channels: 1
Input voltage: 2.5...16V
Produkt ist nicht verfügbar
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LD2981ABM30TR LD2981ABM30TR STMicroelectronics ld2981.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.375V
Output voltage: 3V
Output current: 0.1A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.75%
Number of channels: 1
Input voltage: 2.5...16V
Produkt ist nicht verfügbar
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LD2981CM30TR LD2981CM30TR STMicroelectronics ld2981.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.375V
Output voltage: 3V
Output current: 0.1A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 2.5...16V
Produkt ist nicht verfügbar
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LD2981ABM50TR LD2981ABM50TR STMicroelectronics ld2981.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.18V
Output voltage: 5V
Output current: 0.1A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.75%
Number of channels: 1
Input voltage: 2.5...16V
Produkt ist nicht verfügbar
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STB16NF06LT4 STB16NF06LT4 STMicroelectronics STB16NF06LT4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 45W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
auf Bestellung 2439 Stücke:
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28+2.57 EUR
43+1.68 EUR
125+0.57 EUR
133+0.54 EUR
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STD16NF06LT4 STD16NF06LT4 STMicroelectronics STD16NF06L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 40W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±18V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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65+1.10 EUR
81+0.89 EUR
207+0.35 EUR
219+0.33 EUR
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LM324D LM324D STMicroelectronics LM324DT.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 4; SO14; ±1.5÷15VDC,3÷30VDC
Operating temperature: 0...70°C
Input bias current: 0.2µA
Voltage supply range: ± 1.5...15V DC; 3...30V DC
Mounting: SMT
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: 4
Bandwidth: 1.3MHz
Input offset voltage: 9mV
Integrated circuit features: low power
Kind of package: tube
Slew rate: 0.4V/μs
Input offset current: 40nA
auf Bestellung 2231 Stücke:
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358+0.20 EUR
428+0.17 EUR
451+0.16 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 358
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STGD25N36LZAG STMicroelectronics Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; DPAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: automotive industry; ignition systems
Version: ESD
Produkt ist nicht verfügbar
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STGD25N40LZAG STMicroelectronics en.DM00431184.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; DPAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: automotive industry; ignition systems
Version: ESD
Produkt ist nicht verfügbar
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STP100N10F7 STP100N10F7 STMicroelectronics en.DM00066568.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
auf Bestellung 34 Stücke:
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20+3.63 EUR
22+3.26 EUR
29+2.50 EUR
31+2.36 EUR
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STF100N10F7 STMicroelectronics en.DM00066568.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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STD100N10F7 STMicroelectronics std100n10f7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 320A; 120W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Pulsed drain current: 320A
Power dissipation: 120W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
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L4931CDT33-TR L4931CDT33-TR STMicroelectronics L4931.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...20V
auf Bestellung 1064 Stücke:
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46+1.59 EUR
64+1.12 EUR
111+0.65 EUR
117+0.61 EUR
1000+0.59 EUR
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L4931CD33-TR L4931CD33-TR STMicroelectronics L4931.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...20V
auf Bestellung 1969 Stücke:
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47+1.54 EUR
70+1.03 EUR
118+0.61 EUR
125+0.58 EUR
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L4931ABDT50-TR STMicroelectronics l4931.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 5V
Output current: 0.25A
Case: DPAK
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 5.8...20V
Produkt ist nicht verfügbar
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L4931CDT50-TR L4931CDT50-TR STMicroelectronics l4931.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; L4931
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 5V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...20V
Produkt ist nicht verfügbar
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L4931ABDT33-TR STMicroelectronics l4931.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.25A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 3.3V
Output current: 0.25A
Case: DPAK
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4...20V
Produkt ist nicht verfügbar
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L4931CZ50-AP L4931CZ50-AP STMicroelectronics l4931.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; TO92; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 5V
Output current: 0.25A
Case: TO92
Mounting: THT
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.8...20V
Produkt ist nicht verfügbar
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L4931ABD33-TR L4931ABD33-TR STMicroelectronics l4931.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; L4931
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...20V
Produkt ist nicht verfügbar
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STW10N95K5 stw10n95k5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5A; Idm: 32A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 32A
Produkt ist nicht verfügbar
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STW10N105K5 stw10n105k5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3.78A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
Produkt ist nicht verfügbar
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STGB6NC60HDT4 description en.CD00058424.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGB40V60F en.DM00086251.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STGB10M65DF2 en.DM00157911.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGB40H65FB en.DM00306732.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 0.21µC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STGB50H65FB2
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STGB20M65DF2 en.DM00244727.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 166W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 166W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGB25N36LZAG
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
Produkt ist nicht verfügbar
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STGB5H60DF en.DM00149621.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGB6M65DF2 en.DM00250133.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGB10H60DF en.DM00092752.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGB10NB40LZT4 en.DM00372350.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
Produkt ist nicht verfügbar
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STGB14NC60KDT4 stgb14nc60kdt4.pdf
STGB14NC60KDT4
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGB15M65DF2 en.DM00096991.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 136W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGB20H60DF en.DM00066598.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGB20H65FB2 stgb20h65fb2.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STGB20N45LZAG en.DM00242156.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: automotive industry
Version: ESD
Produkt ist nicht verfügbar
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STGB20NB41LZT4 en.CD00003294.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 200W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 20A
Power dissipation: 200W
Case: D2PAK
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry; ignition systems
Version: ESD
Produkt ist nicht verfügbar
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STGB20V60DF en.DM00079434.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGB25N40LZAG STGB25N40LZAG.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
Produkt ist nicht verfügbar
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STGB30M65DF2 STGB30M65DF2.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGB30V60DF stgb30v60df.pdf
STGB30V60DF
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 163nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGB4M65DF2
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 86W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 86W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGB7H60DF en.DM00164492.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGB7NC60HDT4 en.CD00003695.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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VNP35N07-E vnb35n07-e.pdf
VNP35N07-E
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 35A; Ch: 1; THT; TO220-3; tube
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 35A
Number of channels: 1
Mounting: THT
Case: TO220-3
On-state resistance: 28mΩ
Kind of package: tube
Output voltage: 70V
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.21 EUR
18+4.06 EUR
19+3.85 EUR
100+3.70 EUR
Mindestbestellmenge: 14
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L9362013TR l9362.pdf
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; Ch: 4; SMD; PowerSSO36; reel,tape; 3MHz
Mounting: SMD
Operating temperature: -40...150°C
Case: PowerSSO36
Supply voltage: 4.5...5.5V
Frequency: 3MHz
Type of integrated circuit: power switch
Number of channels: 4
Kind of package: reel; tape
Kind of integrated circuit: low-side
Produkt ist nicht verfügbar
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SMAJ48A-TR SMAJxxX_ser.pdf
SMAJ48A-TR
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 23A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 23A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 2303 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
272+0.26 EUR
325+0.22 EUR
355+0.20 EUR
695+0.10 EUR
736+0.10 EUR
Mindestbestellmenge: 200
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STL260N4F7 stl260n4f7.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Case: PowerFLAT 5x6
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 72nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
Produkt ist nicht verfügbar
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STL260N4LF7 stl260n4lf7.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Case: PowerFLAT 5x6
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 42nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
Produkt ist nicht verfügbar
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STWA88N65M5 stwa88n65m5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 50.5A; Idm: 336A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.5A
Pulsed drain current: 336A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMCJ15A-TR smcj15a.pdf
SMCJ15A-TR
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.6V; 64A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC3303DT mc3303.pdf
MC3303DT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 3÷36V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 6mV
Bandwidth: 1MHz
Integrated circuit features: low power
Kind of package: reel; tape
Slew rate: 0.5V/μs
Input offset current: 200nA
Input bias current: 0.8µA
Operating voltage: 3...36V
Produkt ist nicht verfügbar
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VN820 VN820.pdf
VN820
Hersteller: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 9A; Pentawatt
Type of integrated circuit: power switch
Case: Pentawatt
Output current: 9A
Number of channels: 1
Kind of integrated circuit: high-side
Mounting: THT
Produkt ist nicht verfügbar
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SCT070H120G3AG sct070h120g3ag.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 100A; 223W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 100A
Power dissipation: 223W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SCT070W120G3-4AG sct070w120g3-4ag.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 116A; 236W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 116A
Power dissipation: 236W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 87mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Version: Automotive
Produkt ist nicht verfügbar
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SMAJ28A-TR SMAJxxX_ser.pdf
SMAJ28A-TR
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1V; 39A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
auf Bestellung 9740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
227+0.32 EUR
283+0.25 EUR
315+0.23 EUR
705+0.10 EUR
747+0.10 EUR
Mindestbestellmenge: 152
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FERD20S100STS FERD20S100S.pdf
FERD20S100STS
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 20A; tube; Ifsm: 220A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. forward voltage: 0.415V
Max. load current: 40A
Max. forward impulse current: 220A
Kind of package: tube
Heatsink thickness: 0.51...0.6mm
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
66+1.09 EUR
79+0.90 EUR
Mindestbestellmenge: 43
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BD139 BD139-10-STMicroelectronics.pdf
BD139
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: SOT32
Current gain: 25...250
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Produkt ist nicht verfügbar
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LD2981ABU50TR LD2981.pdf
LD2981ABU50TR
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.18V
Output voltage: 5V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.75%
Number of channels: 1
Input voltage: 2.5...16V
Produkt ist nicht verfügbar
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LD2981CU50TR LD2981.pdf
LD2981CU50TR
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.18V
Output voltage: 5V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.75%
Number of channels: 1
Input voltage: 2.5...16V
Produkt ist nicht verfügbar
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LD2981ABM30TR ld2981.pdf
LD2981ABM30TR
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.375V
Output voltage: 3V
Output current: 0.1A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.75%
Number of channels: 1
Input voltage: 2.5...16V
Produkt ist nicht verfügbar
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LD2981CM30TR ld2981.pdf
LD2981CM30TR
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.375V
Output voltage: 3V
Output current: 0.1A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 2.5...16V
Produkt ist nicht verfügbar
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LD2981ABM50TR ld2981.pdf
LD2981ABM50TR
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.18V
Output voltage: 5V
Output current: 0.1A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.75%
Number of channels: 1
Input voltage: 2.5...16V
Produkt ist nicht verfügbar
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STB16NF06LT4 STB16NF06LT4.pdf
STB16NF06LT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 45W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
auf Bestellung 2439 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
43+1.68 EUR
125+0.57 EUR
133+0.54 EUR
Mindestbestellmenge: 28
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STD16NF06LT4 STD16NF06L.pdf
STD16NF06LT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 40W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±18V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.10 EUR
81+0.89 EUR
207+0.35 EUR
219+0.33 EUR
Mindestbestellmenge: 65
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LM324D LM324DT.pdf
LM324D
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 4; SO14; ±1.5÷15VDC,3÷30VDC
Operating temperature: 0...70°C
Input bias current: 0.2µA
Voltage supply range: ± 1.5...15V DC; 3...30V DC
Mounting: SMT
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: 4
Bandwidth: 1.3MHz
Input offset voltage: 9mV
Integrated circuit features: low power
Kind of package: tube
Slew rate: 0.4V/μs
Input offset current: 40nA
auf Bestellung 2231 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.20 EUR
428+0.17 EUR
451+0.16 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 358
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STGD25N36LZAG
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; DPAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: automotive industry; ignition systems
Version: ESD
Produkt ist nicht verfügbar
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STGD25N40LZAG en.DM00431184.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; DPAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: automotive industry; ignition systems
Version: ESD
Produkt ist nicht verfügbar
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STP100N10F7 en.DM00066568.pdf
STP100N10F7
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
22+3.26 EUR
29+2.50 EUR
31+2.36 EUR
Mindestbestellmenge: 20
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STF100N10F7 en.DM00066568.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STD100N10F7 std100n10f7.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 320A; 120W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Pulsed drain current: 320A
Power dissipation: 120W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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L4931CDT33-TR L4931.pdf
L4931CDT33-TR
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...20V
auf Bestellung 1064 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
64+1.12 EUR
111+0.65 EUR
117+0.61 EUR
1000+0.59 EUR
Mindestbestellmenge: 46
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L4931CD33-TR L4931.pdf
L4931CD33-TR
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...20V
auf Bestellung 1969 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
70+1.03 EUR
118+0.61 EUR
125+0.58 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
L4931ABDT50-TR l4931.pdf
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 5V
Output current: 0.25A
Case: DPAK
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 5.8...20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L4931CDT50-TR l4931.pdf
L4931CDT50-TR
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; L4931
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 5V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L4931ABDT33-TR l4931.pdf
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.25A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 3.3V
Output current: 0.25A
Case: DPAK
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4...20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L4931CZ50-AP l4931.pdf
L4931CZ50-AP
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; TO92; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 5V
Output current: 0.25A
Case: TO92
Mounting: THT
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.8...20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L4931ABD33-TR l4931.pdf
L4931ABD33-TR
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; L4931
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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