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74VHCT540AFT 74VHCT540AFT Toshiba Semiconductor and Storage docget.jsp?did=13951&prodName=74VHCT540AFT Description: IC BUFF 4.5V/5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.25 EUR
Mindestbestellmenge: 2500 Stücke
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74VHC240FT 74VHC240FT Toshiba Semiconductor and Storage 74VHC240FT_datasheet_en_20160818.pdf?did=13947&prodName=74VHC240FT Description: IC BUFFER INVERT 5.5V 20TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 4
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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74VHCT240AFT(BE) 74VHCT240AFT(BE) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74VHCT240AFT Description: IC INVERTER DUAL 4-INPUT 20TSSOP
Produkt ist nicht verfügbar
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74VHC573FT 74VHC573FT Toshiba Semiconductor and Storage docget.jsp?did=14036&prodName=74VHC573FT Description: IC D-TYPE 8:8 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Delay Time - Propagation: 6.5ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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74VHCT573AFT(BE) 74VHCT573AFT(BE) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74VHCT573AFT Description: IC LATCH OCTAL D-TYPE 20-TSSOP
Produkt ist nicht verfügbar
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TC7SP3125TU,LF TC7SP3125TU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SP3125TU Description: SUPPLY BUS BUFFER UNI UF6
Produkt ist nicht verfügbar
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JDP4P02AT(TE85L) JDP4P02AT(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=JDP4P02AT Description: SWITCHING DIODE 30V INDEPENDENT
Produkt ist nicht verfügbar
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1SS300,LF 1SS300,LF Toshiba Semiconductor and Storage 1SS300_datasheet_en_20210625.pdf?did=3292&prodName=1SS300 Description: DIODE ARRAY GP 80V 100MA USM
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: USM
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN1D01F(TE85L,F) HN1D01F(TE85L,F) Toshiba Semiconductor and Storage HN1D01F_datasheet_en_20210625.pdf?did=3439&prodName=HN1D01F Description: DIODE ARRAY GP 80V 100MA SM6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
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1SS301,LF 1SS301,LF Toshiba Semiconductor and Storage 1SS301_datasheet_en_20210625.pdf?did=3294&prodName=1SS301 Description: DIODE ARRAY GP 80V 100MA SC70
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.047 EUR
6000+0.043 EUR
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HN1D02F(TE85L,F) HN1D02F(TE85L,F) Toshiba Semiconductor and Storage HN1D02F_datasheet_en_20210625.pdf?did=3617&prodName=HN1D02F Description: DIODE ARRAY GP 80V 100MA SM6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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HN1D02FU(T5L,F,T) HN1D02FU(T5L,F,T) Toshiba Semiconductor and Storage HN1D02FU_datasheet_en_20210625.pdf?did=3455&prodName=HN1D02FU Description: DIODE ARRAY GP 80V 100MA ES6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: ES6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN1703JE(TE85L,F) RN1703JE(TE85L,F) Toshiba Semiconductor and Storage RN1701JE_datasheet_en_20140301.pdf?did=19121&prodName=RN1701JE Description: TRANS PREBIAS 2NPN 50V 100MA ESV
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN1704JE(TE85L,F) RN1704JE(TE85L,F) Toshiba Semiconductor and Storage RN1701JE_datasheet_en_20140301.pdf?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN1705JE(TE85L,F) RN1705JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN1508(TE85L,F) RN1508(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18805&prodName=RN1508 Description: TRANS 2NPN PREBIAS 0.3W SMV
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN1509(TE85L,F) RN1509(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18805&prodName=RN1508 Description: TRANS 2NPN PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN1511(TE85L,F) RN1511(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18807&prodName=RN1510 Description: TRANS PREBIAS 2NPN 50V 100MA SMV
Supplier Device Package: SMV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN2701JE(TE85L,F) RN2701JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN2703JE(TE85L,F) RN2703JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.15 EUR
8000+0.13 EUR
12000+0.12 EUR
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RN2704JE(TE85L,F) RN2704JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN2705JE(TE85L,F) RN2705JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 4000 Stücke:
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4000+0.16 EUR
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RN2707JE(TE85L,F) RN2707JE(TE85L,F) Toshiba Semiconductor and Storage RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN2708JE(TE85L,F) RN2708JE(TE85L,F) Toshiba Semiconductor and Storage RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN2709JE(TE85L,F) RN2709JE(TE85L,F) Toshiba Semiconductor and Storage RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.15 EUR
Mindestbestellmenge: 4000 Stücke
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RN2710JE(TE85L,F) RN2710JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19108&prodName=RN2711JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN2711JE(TE85L,F) RN2711JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19108&prodName=RN2711JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN2712JE(TE85L,F) RN2712JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=565&prodName=RN2713JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.15 EUR
Mindestbestellmenge: 4000 Stücke
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RN2713JE(TE85L,F) RN2713JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=565&prodName=RN2713JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Power - Max: 100mW
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN2504(TE85L,F) RN2504(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18887&prodName=RN2501 Description: TRANS 2PNP PREBIAS 0.3W SMV
Part Status: Active
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN2507(TE85L,F) RN2507(TE85L,F) Toshiba Semiconductor and Storage RN2507-09.pdf Description: TRANS 2PNP PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
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RN2510(TE85L,F) RN2510(TE85L,F) Toshiba Semiconductor and Storage RN2510_datasheet_en_20191121.pdf?did=18892&prodName=RN2510 Description: TRANS PREBIAS 2PNP 50V 100MA SMV
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SMV
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
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RN2511(TE85L,F) RN2511(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2510 Description: TRANS 2PNP PREBIAS 0.3W SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 3000 Stücke
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RN4981FE(TE85L,F) RN4981FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4981FE Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN4982FE,LF(CT RN4982FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19043&prodName=RN4982FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN4983FE,LF(CT RN4983FE,LF(CT Toshiba Semiconductor and Storage RN4983FE_datasheet_en_20210818.pdf?did=19045&prodName=RN4983FE Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 22kOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN4984FE,LF(CB RN4984FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4984FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 4000 Stücke
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RN4985FE(TE85L,F) RN4985FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4985FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN4987FE(T5L,F,T) RN4987FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4987FE Description: TRAN DUAL NPN/ PNP 50V 100MA ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN4988FE(TE85L,F) RN4988FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4988FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN4989FE(TE85L,F) RN4989FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4989FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN4990FE(T5L,F,T) RN4990FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4990FE Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN4991FE(TE85L,F) RN4991FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4991FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN1902FE,LF(CT RN1902FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19130&prodName=RN1902FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN1903FE(TE85L,F) RN1903FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN1904FE,LF(CT RN1904FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19130&prodName=RN1904FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN1905FE(TE85L,F) RN1905FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905FE Description: TRAN DUAL NPN ES6 50V 100A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN1906FE(T5L,F,T) RN1906FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN1907FE,LF(CT RN1907FE,LF(CT Toshiba Semiconductor and Storage RN1909FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1909FE Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.07 EUR
Mindestbestellmenge: 4000 Stücke
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RN1908FE(TE85L,F) RN1908FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19126&prodName=RN1909FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN1909FE(TE85L,F) RN1909FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19126&prodName=RN1909FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN1910FE(T5L,F,T) RN1910FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1911FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN1967FE(TE85L,F) RN1967FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1967FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN1968FE(TE85L,F) RN1968FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1967FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN1969FE(TE85L,F) RN1969FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1967FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN1970FE(TE85L,F) RN1970FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1970FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN1971FE(TE85L,F) RN1971FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1970FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RN1601(TE85L,F) RN1601(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1601 Description: TRANS 2NPN PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN1604(TE85L,F) RN1604(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1601 Description: TRANS 2NPN PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN1608(TE85L,F) RN1608(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18811&prodName=RN1607 Description: TRANS 2NPN PREBIAS 0.3W SM6
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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74VHCT540AFT docget.jsp?did=13951&prodName=74VHCT540AFT
74VHCT540AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 4.5V/5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.25 EUR
Mindestbestellmenge: 2500 Stücke
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74VHC240FT 74VHC240FT_datasheet_en_20160818.pdf?did=13947&prodName=74VHC240FT
74VHC240FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 5.5V 20TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 4
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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74VHCT240AFT(BE) docget.jsp?type=datasheet&lang=en&pid=74VHCT240AFT
74VHCT240AFT(BE)
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER DUAL 4-INPUT 20TSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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74VHC573FT docget.jsp?did=14036&prodName=74VHC573FT
74VHC573FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC D-TYPE 8:8 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Delay Time - Propagation: 6.5ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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74VHCT573AFT(BE) docget.jsp?type=datasheet&lang=en&pid=74VHCT573AFT
74VHCT573AFT(BE)
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20-TSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TC7SP3125TU,LF docget.jsp?type=datasheet&lang=en&pid=TC7SP3125TU
TC7SP3125TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: SUPPLY BUS BUFFER UNI UF6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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JDP4P02AT(TE85L) docget.jsp?type=datasheet&lang=en&pid=JDP4P02AT
JDP4P02AT(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: SWITCHING DIODE 30V INDEPENDENT
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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1SS300,LF 1SS300_datasheet_en_20210625.pdf?did=3292&prodName=1SS300
1SS300,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA USM
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: USM
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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HN1D01F(TE85L,F) HN1D01F_datasheet_en_20210625.pdf?did=3439&prodName=HN1D01F
HN1D01F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SM6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.1 EUR
Mindestbestellmenge: 3000 Stücke
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1SS301,LF 1SS301_datasheet_en_20210625.pdf?did=3294&prodName=1SS301
1SS301,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC70
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.047 EUR
6000+0.043 EUR
Mindestbestellmenge: 3000 Stücke
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HN1D02F(TE85L,F) HN1D02F_datasheet_en_20210625.pdf?did=3617&prodName=HN1D02F
HN1D02F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SM6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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HN1D02FU(T5L,F,T) HN1D02FU_datasheet_en_20210625.pdf?did=3455&prodName=HN1D02FU
HN1D02FU(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ES6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: ES6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1703JE(TE85L,F) RN1701JE_datasheet_en_20140301.pdf?did=19121&prodName=RN1701JE
RN1703JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ESV
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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RN1704JE(TE85L,F) RN1701JE_datasheet_en_20140301.pdf?did=19121&prodName=RN1701JE
RN1704JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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RN1705JE(TE85L,F) docget.jsp?did=19121&prodName=RN1701JE
RN1705JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1508(TE85L,F) docget.jsp?did=18805&prodName=RN1508
RN1508(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1509(TE85L,F) docget.jsp?did=18805&prodName=RN1508
RN1509(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1511(TE85L,F) docget.jsp?did=18807&prodName=RN1510
RN1511(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA SMV
Supplier Device Package: SMV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2701JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2701JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2703JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2703JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.15 EUR
8000+0.13 EUR
12000+0.12 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2704JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2704JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2705JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2705JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.16 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2707JE(TE85L,F) RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE
RN2707JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2708JE(TE85L,F) RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE
RN2708JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2709JE(TE85L,F) RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE
RN2709JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.15 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2710JE(TE85L,F) docget.jsp?did=19108&prodName=RN2711JE
RN2710JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2711JE(TE85L,F) docget.jsp?did=19108&prodName=RN2711JE
RN2711JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2712JE(TE85L,F) docget.jsp?did=565&prodName=RN2713JE
RN2712JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.15 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2713JE(TE85L,F) docget.jsp?did=565&prodName=RN2713JE
RN2713JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Power - Max: 100mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2504(TE85L,F) docget.jsp?did=18887&prodName=RN2501
RN2504(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Part Status: Active
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2507(TE85L,F) RN2507-09.pdf
RN2507(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2510(TE85L,F) RN2510_datasheet_en_20191121.pdf?did=18892&prodName=RN2510
RN2510(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA SMV
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SMV
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2511(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2510
RN2511(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4981FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4981FE
RN4981FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4982FE,LF(CT docget.jsp?did=19043&prodName=RN4982FE
RN4982FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4983FE,LF(CT RN4983FE_datasheet_en_20210818.pdf?did=19045&prodName=RN4983FE
RN4983FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 22kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4984FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN4984FE
RN4984FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4985FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4985FE
RN4985FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4987FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4987FE
RN4987FE(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/ PNP 50V 100MA ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4988FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4988FE
RN4988FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4989FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4989FE
RN4989FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4990FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4990FE
RN4990FE(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4991FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4991FE
RN4991FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1902FE,LF(CT docget.jsp?did=19130&prodName=RN1902FE
RN1902FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1903FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1902FE
RN1903FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1904FE,LF(CT docget.jsp?did=19130&prodName=RN1904FE
RN1904FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1905FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1905FE
RN1905FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN ES6 50V 100A
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1906FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1902FE
RN1906FE(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1907FE,LF(CT RN1909FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1909FE
RN1907FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.07 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1908FE(TE85L,F) docget.jsp?did=19126&prodName=RN1909FE
RN1908FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1909FE(TE85L,F) docget.jsp?did=19126&prodName=RN1909FE
RN1909FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1910FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1911FE
RN1910FE(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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RN1967FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1967FE
RN1967FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
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RN1968FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1967FE
RN1968FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
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RN1969FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1967FE
RN1969FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
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RN1970FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1970FE
RN1970FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN1971FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1970FE
RN1971FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
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RN1601(TE85L,F) docget.jsp?did=18809&prodName=RN1601
RN1601(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
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RN1604(TE85L,F) docget.jsp?did=18809&prodName=RN1601
RN1604(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
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RN1608(TE85L,F) docget.jsp?did=18811&prodName=RN1607
RN1608(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
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