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SMBJ188A-E3/52 SMBJ188A-E3/52 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 188VWM 328VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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45+0.4 EUR
142+0.12 EUR
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SMBJ188CA-E3/52 SMBJ188CA-E3/52 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 188VWM 328VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 3476 Stücke:
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SMCG36A-E3/57T SMCG36A-E3/57T Vishay General Semiconductor - Diodes Division smcg.pdf Description: TVS DIODE 36VWM 58.1VC DO215AB
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SMCG60A-E3/57T SMCG60A-E3/57T Vishay General Semiconductor - Diodes Division smcg.pdf Description: TVS DIODE 60VWM 96VC DO215AB
Packaging: Cut Tape (CT)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ11CA-E3/57T SMCJ11CA-E3/57T Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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SMCJ78A-E3/9AT SMCJ78A-E3/9AT Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 78VWM 126VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.9A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMCJ8.5A-E3/57T SMCJ8.5A-E3/57T Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 8.5V 14.4V DO214AB
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SMCJ8.5CA-E3/57T SMCJ8.5CA-E3/57T Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 104.2A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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UG4D-E3/54 UG4D-E3/54 Vishay General Semiconductor - Diodes Division ug4a.pdf Description: DIODE GEN PURP 200V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 9853 Stücke:
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UH4PDC-M3/86A UH4PDC-M3/86A Vishay General Semiconductor - Diodes Division UH4PBC%2CPCC%2CPDC.pdf Description: DIODE ARRAY GP 200V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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VB10170C-E3/8W VB10170C-E3/8W Vishay General Semiconductor - Diodes Division vb10170c.pdf Description: DIODE ARRAY SCHOTTKY 170V TO236
Produkt ist nicht verfügbar
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VB40170C-E3/8W Vishay General Semiconductor - Diodes Division vb40170c.pdf Description: DIODE ARRAY SCHOTTKY 170V TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 170 V
Produkt ist nicht verfügbar
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VS-ETH1506-1-M3 VS-ETH1506-1-M3 Vishay General Semiconductor - Diodes Division vs-eth1506s-m3.pdf Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
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VS-ETH3006-M3 VS-ETH3006-M3 Vishay General Semiconductor - Diodes Division vs-eth3006-m3.pdf Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 1935 Stücke:
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6+3.33 EUR
50+1.42 EUR
100+1.33 EUR
500+1.26 EUR
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VS-ETL1506-1-M3 VS-ETL1506-1-M3 Vishay General Semiconductor - Diodes Division vs-etl1506s-m3.pdf Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
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VS-ETX1506FP-M3 VS-ETX1506FP-M3 Vishay General Semiconductor - Diodes Division vs-etx1506fpm3.pdf Description: DIODE STANDARD 600V 15A TO2202
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
auf Bestellung 1717 Stücke:
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VS-ETU1506-1-M3 VS-ETU1506-1-M3 Vishay General Semiconductor - Diodes Division vs-etu1506sm3.pdf Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
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VS-ETL1506FP-M3 VS-ETL1506FP-M3 Vishay General Semiconductor - Diodes Division vs-etl1506fpm3.pdf Description: DIODE STANDARD 600V 15A TO2202
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 193 Stücke:
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VS-6EWH06FNTR-M3 VS-6EWH06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-6ewh06fn-m3.pdf Description: DIODE STANDARD 600V 6A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 3676 Stücke:
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500+0.65 EUR
1000+0.59 EUR
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VS-ETH3006FP-M3 VS-ETH3006FP-M3 Vishay General Semiconductor - Diodes Division vs-eth3006fpm3.pdf Description: DIODE STANDARD 600V 30A TO2202
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
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VS-ETU3006-M3 VS-ETU3006-M3 Vishay General Semiconductor - Diodes Division vs-etu3006-m3.pdf Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
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VS-8S2TH06I-M VS-8S2TH06I-M Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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VS-ETL1506-M3 VS-ETL1506-M3 Vishay General Semiconductor - Diodes Division vs-etl1506-m3.pdf Description: DIODE STANDARD 600V 15A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 6652 Stücke:
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VS-ETH1506-M3 VS-ETH1506-M3 Vishay General Semiconductor - Diodes Division vs-eth1506-m3.pdf Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
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VS-ETX0806FP-M3 VS-ETX0806FP-M3 Vishay General Semiconductor - Diodes Division vs-etx0806fpm3.pdf Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
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VS-ETL0806FP-M3 VS-ETL0806FP-M3 Vishay General Semiconductor - Diodes Division vs-etl0806fpm3.pdf Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 8 A
Current - Reverse Leakage @ Vr: 9 µA @ 600 V
Produkt ist nicht verfügbar
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VS-ETH0806FP-M3 VS-ETH0806FP-M3 Vishay General Semiconductor - Diodes Division vs-eth0806fp-m3.pdf Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 8 A
Current - Reverse Leakage @ Vr: 12 µA @ 600 V
auf Bestellung 336 Stücke:
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VS-ETX0806-M3 VS-ETX0806-M3 Vishay General Semiconductor - Diodes Division vs-etx0806-m3.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 8172 Stücke:
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VS-ETL0806-M3 VS-ETL0806-M3 Vishay General Semiconductor - Diodes Division vs-etl0806-m3.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 8 A
Current - Reverse Leakage @ Vr: 9 µA @ 600 V
auf Bestellung 4484 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
50+1.07 EUR
100+0.96 EUR
500+0.78 EUR
1000+0.72 EUR
2000+0.66 EUR
Mindestbestellmenge: 9
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VS-ETH0806-M3 VS-ETH0806-M3 Vishay General Semiconductor - Diodes Division vs-eth0806m3.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 8 A
Current - Reverse Leakage @ Vr: 12 µA @ 600 V
auf Bestellung 4069 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.11 EUR
50+1.09 EUR
100+0.99 EUR
500+0.8 EUR
1000+0.73 EUR
2000+0.68 EUR
Mindestbestellmenge: 9
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VS-ETU3006-1-M3 VS-ETU3006-1-M3 Vishay General Semiconductor - Diodes Division vs-etu3006s-m3.pdf Description: DIODE STANDARD 600V 30A TO2623
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 70 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
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VS-EPH3006-N3 VS-EPH3006-N3 Vishay General Semiconductor - Diodes Division vs-aph3006n3.pdf Description: DIODE STANDARD 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 422 Stücke:
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2+9.66 EUR
25+5.96 EUR
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VS-5EWH06FNTR-M3 VS-5EWH06FNTR-M3 Vishay General Semiconductor - Diodes Division tf-vs-5ewh06fntr-m3.pdf Description: DIODE STANDARD 600V 5A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.45 EUR
4000+0.44 EUR
10000+0.43 EUR
Mindestbestellmenge: 2000
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VS-ETH3006-1-M3 VS-ETH3006-1-M3 Vishay General Semiconductor - Diodes Division vs-eth3006s-m3.pdf Description: DIODE STANDARD 600V 30A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-EPU3006-N3 VS-EPU3006-N3 Vishay General Semiconductor - Diodes Division vs-epu3006n3.pdf Description: DIODE STANDARD 600V 30A TO247AC
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETU3006FP-M3 VS-ETU3006FP-M3 Vishay General Semiconductor - Diodes Division vs-etu3006fpm3.pdf Description: DIODE STANDARD 600V 30A TO2202
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETU1506FP-M3 VS-ETU1506FP-M3 Vishay General Semiconductor - Diodes Division vs-etu1506fpm3.pdf Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 71 Stücke:
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8+2.32 EUR
10+1.9 EUR
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VS-ETH1506FP-M3 VS-ETH1506FP-M3 Vishay General Semiconductor - Diodes Division vs-eth1506fpm3.pdf Description: DIODE STANDARD 600V 15A TO2202
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 616 Stücke:
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7+2.76 EUR
50+1.39 EUR
100+1.15 EUR
500+1.08 EUR
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VS-ETX1506-M3 VS-ETX1506-M3 Vishay General Semiconductor - Diodes Division vs-etx1506-m3.pdf Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETX1506-1-M3 VS-ETX1506-1-M3 Vishay General Semiconductor - Diodes Division vs-etx1506s-m3.pdf Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETH3006S-M3 VS-ETH3006S-M3 Vishay General Semiconductor - Diodes Division vs-eth3006s-m3.pdf Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 3406 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.87 EUR
50+1.34 EUR
500+1.31 EUR
1000+1.3 EUR
2000+1.29 EUR
Mindestbestellmenge: 7
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VS-15EWX06FNTR-M3 VS-15EWX06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-15ewx06fn-m3.pdf Description: DIODE STANDARD 600V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.79 EUR
Mindestbestellmenge: 2000
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VS-ETU3006S-M3 VS-ETU3006S-M3 Vishay General Semiconductor - Diodes Division vs-etu3006s-m3.pdf Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 70 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 4555 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.01 EUR
50+1.31 EUR
100+1.24 EUR
500+1.23 EUR
1000+1.18 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETX1506S-M3 Vishay General Semiconductor - Diodes Division vs-etx1506s-m3.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETL1506S-M3 VS-ETL1506S-M3 Vishay General Semiconductor - Diodes Division vs-etl1506s-m3.pdf Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 5170 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.89 EUR
50+1.33 EUR
100+1.3 EUR
500+1.2 EUR
1000+1.14 EUR
2000+1.05 EUR
5000+0.96 EUR
Mindestbestellmenge: 7
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VS-ETH1506S-M3 VS-ETH1506S-M3 Vishay General Semiconductor - Diodes Division vs-eth1506s-m3.pdf Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 3178 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.68 EUR
50+1.26 EUR
100+1.18 EUR
500+1.08 EUR
1000+1 EUR
2000+0.92 EUR
Mindestbestellmenge: 7
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VS-5EWH06FNTR-M3 VS-5EWH06FNTR-M3 Vishay General Semiconductor - Diodes Division tf-vs-5ewh06fntr-m3.pdf Description: DIODE STANDARD 600V 5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 17818 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
23+0.77 EUR
100+0.63 EUR
500+0.57 EUR
Mindestbestellmenge: 22
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VS-15EWH06FNTR-M3 VS-15EWH06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-15ewh06fn-m3.pdf Description: DIODE STANDARD 600V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.81 EUR
4000+0.75 EUR
Mindestbestellmenge: 2000
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VS-15EWH06FNTR-M3 VS-15EWH06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-15ewh06fn-m3.pdf Description: DIODE STANDARD 600V 15A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 4334 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.46 EUR
14+1.28 EUR
100+1.21 EUR
500+0.96 EUR
1000+0.88 EUR
Mindestbestellmenge: 13
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VS-15EWL06FNTR-M3 VS-15EWL06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-15ewl06fn-m3.pdf Description: DIODE STANDARD 600V 15A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 7866 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.58 EUR
15+1.19 EUR
100+1.08 EUR
500+1 EUR
1000+0.94 EUR
Mindestbestellmenge: 12
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VS-15EWX06FNTR-M3 VS-15EWX06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-15ewx06fn-m3.pdf Description: DIODE STANDARD 600V 15A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 27016 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.55 EUR
13+1.46 EUR
100+1.3 EUR
500+1.03 EUR
1000+0.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
VS-8EWL06FNTR-M3 VS-8EWL06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-8ewl06fn-m3.pdf Description: DIODE STANDARD 600V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.5 EUR
11+1.6 EUR
100+1.12 EUR
500+0.88 EUR
Mindestbestellmenge: 8
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VS-8EWX06FNTR-M3 VS-8EWX06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-8ewx06fn-m3.pdf Description: DIODE GEN PURP 600V 8A DPAK
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.76 EUR
12+1.57 EUR
Mindestbestellmenge: 10
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VS-6EWH06FNTR-M3 VS-6EWH06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-6ewh06fn-m3.pdf Description: DIODE STANDARD 600V 6A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.48 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
VS-8EWX06FNTR-M3 VS-8EWX06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-8ewx06fn-m3.pdf Description: DIODE GEN PURP 600V 8A DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-8EWL06FNTR-M3 VS-8EWL06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-8ewl06fn-m3.pdf Description: DIODE STANDARD 600V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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VS-15EWL06FNTR-M3 VS-15EWL06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-15ewl06fn-m3.pdf Description: DIODE STANDARD 600V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 6000 Stücke:
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4000+0.79 EUR
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VS-8ETX06SPBF VS-8ETX06SPBF Vishay General Semiconductor - Diodes Division VS-8ETX06SPbF_VS-8ETX06-1PbF.pdf Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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V40170C-M3/4W V40170C-M3/4W Vishay General Semiconductor - Diodes Division v40170c-m3.pdf Description: DIODE ARRAY SCHOTTKY 170V TO220
auf Bestellung 8 Stücke:
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VB60170G-E3/8W VB60170G-E3/8W Vishay General Semiconductor - Diodes Division vb60170g.pdf Description: DIODE ARR SCHOT 170V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 170 V
Produkt ist nicht verfügbar
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SMBJ188A-E3/52 smbj.pdf
SMBJ188A-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 188VWM 328VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 4121 Stücke:
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42+0.42 EUR
45+0.4 EUR
142+0.12 EUR
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SMBJ188CA-E3/52 smbj.pdf
SMBJ188CA-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 188VWM 328VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 3476 Stücke:
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27+0.67 EUR
35+0.51 EUR
100+0.31 EUR
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SMCG36A-E3/57T smcg.pdf
SMCG36A-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO215AB
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SMCG60A-E3/57T smcg.pdf
SMCG60A-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 60VWM 96VC DO215AB
Packaging: Cut Tape (CT)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 543 Stücke:
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Anzahl Preis
10+1.8 EUR
12+1.47 EUR
100+1.15 EUR
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SMCJ11CA-E3/57T smcj.pdf
SMCJ11CA-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 1805 Stücke:
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Anzahl Preis
16+1.13 EUR
23+0.8 EUR
100+0.55 EUR
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SMCJ78A-E3/9AT smcj.pdf
SMCJ78A-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 78VWM 126VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.9A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMCJ8.5A-E3/57T smcj.pdf
SMCJ8.5A-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5V 14.4V DO214AB
auf Bestellung 2313 Stücke:
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SMCJ8.5CA-E3/57T smcj.pdf
SMCJ8.5CA-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 104.2A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 1736 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
21+0.86 EUR
100+0.6 EUR
Mindestbestellmenge: 18
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UG4D-E3/54 ug4a.pdf
UG4D-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 9853 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
21+0.86 EUR
100+0.6 EUR
500+0.46 EUR
Mindestbestellmenge: 18
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UH4PDC-M3/86A UH4PBC%2CPCC%2CPDC.pdf
UH4PDC-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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VB10170C-E3/8W vb10170c.pdf
VB10170C-E3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 170V TO236
Produkt ist nicht verfügbar
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VB40170C-E3/8W vb40170c.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 170V TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 170 V
Produkt ist nicht verfügbar
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VS-ETH1506-1-M3 vs-eth1506s-m3.pdf
VS-ETH1506-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
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VS-ETH3006-M3 vs-eth3006-m3.pdf
VS-ETH3006-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 1935 Stücke:
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Anzahl Preis
6+3.33 EUR
50+1.42 EUR
100+1.33 EUR
500+1.26 EUR
1000+1.22 EUR
Mindestbestellmenge: 6
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VS-ETL1506-1-M3 vs-etl1506s-m3.pdf
VS-ETL1506-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
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VS-ETX1506FP-M3 vs-etx1506fpm3.pdf
VS-ETX1506FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
auf Bestellung 1717 Stücke:
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Anzahl Preis
7+2.82 EUR
50+1.27 EUR
100+1.24 EUR
500+1.15 EUR
1000+1.08 EUR
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VS-ETU1506-1-M3 vs-etu1506sm3.pdf
VS-ETU1506-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
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VS-ETL1506FP-M3 vs-etl1506fpm3.pdf
VS-ETL1506FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
50+1.27 EUR
100+1.24 EUR
Mindestbestellmenge: 7
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VS-6EWH06FNTR-M3 vs-6ewh06fn-m3.pdf
VS-6EWH06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 6A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 3676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
17+1.07 EUR
100+0.83 EUR
500+0.65 EUR
1000+0.59 EUR
Mindestbestellmenge: 12
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VS-ETH3006FP-M3 vs-eth3006fpm3.pdf
VS-ETH3006FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO2202
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 762 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.05 EUR
50+1.98 EUR
100+1.78 EUR
500+1.42 EUR
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VS-ETU3006-M3 vs-etu3006-m3.pdf
VS-ETU3006-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
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VS-8S2TH06I-M
VS-8S2TH06I-M
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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VS-ETL1506-M3 vs-etl1506-m3.pdf
VS-ETL1506-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 6652 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
50+1.07 EUR
500+0.98 EUR
1000+0.93 EUR
2000+0.84 EUR
Mindestbestellmenge: 9
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VS-ETH1506-M3 vs-eth1506-m3.pdf
VS-ETH1506-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
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VS-ETX0806FP-M3 vs-etx0806fpm3.pdf
VS-ETX0806FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 830 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
50+1.05 EUR
100+0.83 EUR
500+0.71 EUR
Mindestbestellmenge: 14
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VS-ETL0806FP-M3 vs-etl0806fpm3.pdf
VS-ETL0806FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 8 A
Current - Reverse Leakage @ Vr: 9 µA @ 600 V
Produkt ist nicht verfügbar
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VS-ETH0806FP-M3 vs-eth0806fp-m3.pdf
VS-ETH0806FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 8 A
Current - Reverse Leakage @ Vr: 12 µA @ 600 V
auf Bestellung 336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
50+1.5 EUR
100+1.19 EUR
Mindestbestellmenge: 10
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VS-ETX0806-M3 vs-etx0806-m3.pdf
VS-ETX0806-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 8172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
50+1.38 EUR
100+1.1 EUR
500+0.93 EUR
1000+0.76 EUR
2000+0.71 EUR
5000+0.68 EUR
Mindestbestellmenge: 11
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VS-ETL0806-M3 vs-etl0806-m3.pdf
VS-ETL0806-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 8 A
Current - Reverse Leakage @ Vr: 9 µA @ 600 V
auf Bestellung 4484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
50+1.07 EUR
100+0.96 EUR
500+0.78 EUR
1000+0.72 EUR
2000+0.66 EUR
Mindestbestellmenge: 9
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VS-ETH0806-M3 vs-eth0806m3.pdf
VS-ETH0806-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 8 A
Current - Reverse Leakage @ Vr: 12 µA @ 600 V
auf Bestellung 4069 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.11 EUR
50+1.09 EUR
100+0.99 EUR
500+0.8 EUR
1000+0.73 EUR
2000+0.68 EUR
Mindestbestellmenge: 9
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VS-ETU3006-1-M3 vs-etu3006s-m3.pdf
VS-ETU3006-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO2623
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 70 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
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VS-EPH3006-N3 vs-aph3006n3.pdf
VS-EPH3006-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.66 EUR
25+5.96 EUR
100+5.36 EUR
Mindestbestellmenge: 2
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VS-5EWH06FNTR-M3 tf-vs-5ewh06fntr-m3.pdf
VS-5EWH06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 5A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.45 EUR
4000+0.44 EUR
10000+0.43 EUR
Mindestbestellmenge: 2000
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VS-ETH3006-1-M3 vs-eth3006s-m3.pdf
VS-ETH3006-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
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VS-EPU3006-N3 vs-epu3006n3.pdf
VS-EPU3006-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO247AC
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETU3006FP-M3 vs-etu3006fpm3.pdf
VS-ETU3006FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO2202
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETU1506FP-M3 vs-etu1506fpm3.pdf
VS-ETU1506FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
10+1.9 EUR
Mindestbestellmenge: 8
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VS-ETH1506FP-M3 vs-eth1506fpm3.pdf
VS-ETH1506FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
50+1.39 EUR
100+1.15 EUR
500+1.08 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETX1506-M3 vs-etx1506-m3.pdf
VS-ETX1506-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETX1506-1-M3 vs-etx1506s-m3.pdf
VS-ETX1506-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETH3006S-M3 vs-eth3006s-m3.pdf
VS-ETH3006S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 3406 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.87 EUR
50+1.34 EUR
500+1.31 EUR
1000+1.3 EUR
2000+1.29 EUR
Mindestbestellmenge: 7
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VS-15EWX06FNTR-M3 vs-15ewx06fn-m3.pdf
VS-15EWX06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.79 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETU3006S-M3 vs-etu3006s-m3.pdf
VS-ETU3006S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 70 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 4555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
50+1.31 EUR
100+1.24 EUR
500+1.23 EUR
1000+1.18 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETX1506S-M3 vs-etx1506s-m3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETL1506S-M3 vs-etl1506s-m3.pdf
VS-ETL1506S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 5170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.89 EUR
50+1.33 EUR
100+1.3 EUR
500+1.2 EUR
1000+1.14 EUR
2000+1.05 EUR
5000+0.96 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
VS-ETH1506S-M3 vs-eth1506s-m3.pdf
VS-ETH1506S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 3178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
50+1.26 EUR
100+1.18 EUR
500+1.08 EUR
1000+1 EUR
2000+0.92 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
VS-5EWH06FNTR-M3 tf-vs-5ewh06fntr-m3.pdf
VS-5EWH06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 17818 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
23+0.77 EUR
100+0.63 EUR
500+0.57 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
VS-15EWH06FNTR-M3 vs-15ewh06fn-m3.pdf
VS-15EWH06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.81 EUR
4000+0.75 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
VS-15EWH06FNTR-M3 vs-15ewh06fn-m3.pdf
VS-15EWH06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 4334 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
14+1.28 EUR
100+1.21 EUR
500+0.96 EUR
1000+0.88 EUR
Mindestbestellmenge: 13
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VS-15EWL06FNTR-M3 vs-15ewl06fn-m3.pdf
VS-15EWL06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 7866 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
15+1.19 EUR
100+1.08 EUR
500+1 EUR
1000+0.94 EUR
Mindestbestellmenge: 12
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VS-15EWX06FNTR-M3 vs-15ewx06fn-m3.pdf
VS-15EWX06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 27016 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
13+1.46 EUR
100+1.3 EUR
500+1.03 EUR
1000+0.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
VS-8EWL06FNTR-M3 vs-8ewl06fn-m3.pdf
VS-8EWL06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
11+1.6 EUR
100+1.12 EUR
500+0.88 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
VS-8EWX06FNTR-M3 vs-8ewx06fn-m3.pdf
VS-8EWX06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A DPAK
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
12+1.57 EUR
Mindestbestellmenge: 10
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VS-6EWH06FNTR-M3 vs-6ewh06fn-m3.pdf
VS-6EWH06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 6A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.48 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
VS-8EWX06FNTR-M3 vs-8ewx06fn-m3.pdf
VS-8EWX06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-8EWL06FNTR-M3 vs-8ewl06fn-m3.pdf
VS-8EWL06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-15EWL06FNTR-M3 vs-15ewl06fn-m3.pdf
VS-15EWL06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.83 EUR
4000+0.79 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
VS-8ETX06SPBF VS-8ETX06SPbF_VS-8ETX06-1PbF.pdf
VS-8ETX06SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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V40170C-M3/4W v40170c-m3.pdf
V40170C-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 170V TO220
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
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VB60170G-E3/8W vb60170g.pdf
VB60170G-E3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 170V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 170 V
Produkt ist nicht verfügbar
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