Die Produkte vishay general semiconductor - diodes division

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1N5397GPHE3/73 1N5397GPHE3/73 1n5391gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1.5A DO204AC
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5395GPHE3/54 1N5395GPHE3/54 1n5391gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1.5A DO204AC
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5397GPHE3/54 1N5397GPHE3/54 1n5391gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1.5A DO204AC
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5398GPHE3/54 1N5398GPHE3/54 1n5391gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5615GPHE3/54 1N5615GPHE3/54 1n5615gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO204AC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1N5615
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5617GPHE3/54 1N5617GPHE3/54 1n5615gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5619GPHE3/54 1N5619GPHE3/54 1n5615gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N5619
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SB240S-E3/73 SB240S-E3/73 sb220s.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 2A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SB240S-E3/54 SB240S-E3/54 sb220s.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 2A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 5500 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 2A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 2A
Packaging: Cut Tape (CT)
auf Bestellung 9985 Stücke
Lieferzeit 21-28 Tag (e)
BYM07-300-E3/98 BYM07-300-E3/98 packaging.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 300V 500MA DO213
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 300V 500MA DO213
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 1301 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5445 Stücke - Preis und Lieferfrist anzeigen
25+ 1.07 EUR
29+ 0.92 EUR
100+ 0.68 EUR
500+ 0.54 EUR
1000+ 0.42 EUR
AU1PJ-M3/84A AU1PJ-M3/84A au1pm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 1A DO220AA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 839 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8992 Stücke - Preis und Lieferfrist anzeigen
22+ 1.2 EUR
27+ 0.96 EUR
100+ 0.66 EUR
500+ 0.49 EUR
BAT81S-TR BAT81S-TR bat81s.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 30MA DO35
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 40V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Current - Average Rectified (Io): 30mA (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Base Part Number: BAT81
Operating Temperature - Junction: 125°C (Max)
auf Bestellung 9586 Stücke
Lieferzeit 21-28 Tag (e)
SSA33L-E3/5AT SSA33L-E3/5AT ssa33l.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 3A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VESD12-02V-G-08 VESD12-02V-G-08 VESDxx-02V.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 12V 25V SOD523
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 25W
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Voltage - Breakdown (Min): 14V
Voltage - Reverse Standoff (Typ): 12V (Max)
Unidirectional Channels: 1
Type: Zener
Part Status: Last Time Buy
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: VESD12
Supplier Device Package: SOD-523
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 90736 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: TVS DIODE 12V 25V SOD523
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Base Part Number: VESD12
Supplier Device Package: SOD-523
Package / Case: SC-79, SOD-523
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 25W
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Voltage - Breakdown (Min): 14V
Voltage - Reverse Standoff (Typ): 12V (Max)
Unidirectional Channels: 1
Type: Zener
Part Status: Last Time Buy
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 12738 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 90736 Stücke - Preis und Lieferfrist anzeigen
P6SMB120A-E3/5B P6SMB120A-E3/5B p6smb.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 102VWM 165VC DO214AA
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 165V
Voltage - Breakdown (Min): 114V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 102V
Current - Peak Pulse (10/1000µs): 3.6A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SMAJ170A-E3/61 SMAJ170A-E3/61 smaj50a.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 170V
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Current - Peak Pulse (10/1000µs): 1.09A
Power - Peak Pulse: 300W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay General Semiconductor - Diodes Division Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Cut Tape (CT)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 170V
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Current - Peak Pulse (10/1000µs): 1.09A
Power - Peak Pulse: 300W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
auf Bestellung 82 Stücke
Lieferzeit 21-28 Tag (e)
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SMBJ90A-E3/52 SMBJ90A-E3/52 smbj.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 90V 146V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 90V
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Current - Peak Pulse (10/1000µs): 4.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMBJ)
auf Bestellung 750 Stücke
Lieferzeit 21-28 Tag (e)
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Vishay General Semiconductor - Diodes Division Description: TVS DIODE 90V 146V DO214AA
Packaging: Cut Tape (CT)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 90V
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Current - Peak Pulse (10/1000µs): 4.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMBJ)
auf Bestellung 953 Stücke
Lieferzeit 21-28 Tag (e)
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P6SMB68A-E3/52 P6SMB68A-E3/52 p6smb.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 58.1VWM 92VC DO214AA
Current - Peak Pulse (10/1000µs): 6.5A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 58.1V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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P4SMA15A-E3/61 P4SMA15A-E3/61 p4sma.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 12.8VWM 21.2VC DO214AC
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 18.9A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay General Semiconductor - Diodes Division Description: TVS DIODE 12.8VWM 21.2VC DO214AC
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 18.9A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
auf Bestellung 174 Stücke
Lieferzeit 21-28 Tag (e)
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24+ 1.12 EUR
31+ 0.85 EUR
100+ 0.53 EUR
SMBJ58A-E3/52 SMBJ58A-E3/52 smbj.pdf техническая информация Vishay General Semiconductor - Diodes Division Description: TVS DIODE 58VWM 93.6VC DO214AA
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 6.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Unidirectional Channels: 1
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Vishay General Semiconductor - Diodes Division Description: TVS DIODE 58VWM 93.6VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 6.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 644 Stücke
Lieferzeit 21-28 Tag (e)
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SMBJ7.5A-E3/52 SMBJ7.5A-E3/52 smbj.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 7.5V 12.9V DO214AA
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMBJ)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Voltage - Reverse Standoff (Typ): 7.5V
Unidirectional Channels: 1
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Vishay General Semiconductor - Diodes Division Description: TVS DIODE 7.5V 12.9V DO214AA
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Type: Zener
Package / Case: DO-214AA, SMB
Part Status: Active
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Voltage - Reverse Standoff (Typ): 7.5V
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Lieferzeit 21-28 Tag (e)
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SMBJ16A-E3/52 SMBJ16A-E3/52 smbj.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 16VWM 26VC DO214AA
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 16V
Current - Peak Pulse (10/1000µs): 23.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 26V
Voltage - Breakdown (Min): 17.8V
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EGL34FHE3/83 EGL34FHE3/83 egl34.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 300V 500MA DO213
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
EGL34GHE3/83 EGL34GHE3/83 egl34.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 500MA DO213
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 400V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM07-150HE3/98 BYM07-150HE3/98 egl34.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 150V 500MA DO213
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 150V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Base Part Number: BYM07
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM10-1000HE3/96 BYM10-1000HE3/96 bym10-xxx.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO213AB
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
EGL34FHE3/98 EGL34FHE3/98 egl34.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 300V 500MA DO213
Base Part Number: EGL34
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
EGL34GHE3/98 EGL34GHE3/98 egl34.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 500MA DO213
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC Reverse (Vr) (Max): 400V
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 500mA
Current - Average Rectified (Io): 500mA
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL34J/1 RGL34J/1 rgl34a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 500MA DO213
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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RGL34J-E3/83 RGL34J-E3/83 rgl34a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 500MA DO213
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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RGL34A-E3/98 RGL34A-E3/98 rgl34a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 500MA DO213AA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11366 Stücke - Preis und Lieferfrist anzeigen
2500+ 0.41 EUR
5000+ 0.4 EUR
RGL34K-E3/98 RGL34K-E3/98 rgl34a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 500MA DO213
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
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SBYV26CHE3/73 SBYV26CHE3/73 sbyv26c.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AL
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SBYV26CHE3/54 SBYV26CHE3/54 sbyv26c.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SSA34HE3/5AT SSA34HE3/5AT ssa33l.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 40V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SSA34
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL34K-E3/83 RGL34K-E3/83 rgl34a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 500MA DO213
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
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SS24-E3/5BT SS24-E3/5BT ss22.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 2A DO214AA
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
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Lieferzeit 21-28 Tag (e)
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3200+ 0.41 EUR
VS-11DQ10 VS-11DQ10 VS-11DQ09,10(M3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 1.1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
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BYS11-90HE3/TR BYS11-90HE3/TR bys1190.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
US1DHE3/61T US1DHE3/61T us1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO214AC
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
US1GHE3/61T US1GHE3/61T us1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
EGP10GE-E3/54 EGP10GE-E3/54 egp10a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Diode Type: Standard
Part Status: Last Time Buy
Base Part Number: EGP10
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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GF1B-E3/5CA GF1B-E3/5CA gf1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO214BA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL34JHE3/83 RGL34JHE3/83 rgl34a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 500MA DO213
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SSA33L-E3/5AT SSA33L-E3/5AT ssa33l.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 3A DO214AC
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL34AHE3/98 RGL34AHE3/98 rgl34a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL34JHE3/98 RGL34JHE3/98 rgl34a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 500MA DO213
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL34KHE3/98 RGL34KHE3/98 rgl34a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 500MA DO213
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Tape & Reel (TR)
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BYM11-1000HE3/96 BYM11-1000HE3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM11-100HE3/96 BYM11-100HE3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM11-200HE3/96 BYM11-200HE3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO213AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM11-400HE3/96 BYM11-400HE3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM11-50HE3/96 BYM11-50HE3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 1A DO213AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM11-600HE3/96 BYM11-600HE3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO213AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM11-800HE3/96 BYM11-800HE3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO213AB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41AHE3/96 RGL41AHE3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 1A DO213AB
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41BHE3/96 RGL41BHE3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO213AB
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41DHE3/96 RGL41DHE3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO213AB
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41GHE3/96 RGL41GHE3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO213AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41JHE3/96 RGL41JHE3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO213AB
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41KHE3/96 RGL41KHE3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41MHE3/96 RGL41MHE3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
EGP10G-E3/54 EGP10G-E3/54 egp10a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5062GPHE3/73 1N5062GPHE3/73 1n5059gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO204AC
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY127MGPHE3/73 BY127MGPHE3/73 BY127MGP.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GP 1.25KV 1.75A DO204
Current - Reverse Leakage @ Vr: 5 µA @ 1250 V
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1250 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.75A
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY133GPHE3/73 BY133GPHE3/73 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.3KV 1A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 2 µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GP15MHE3/73 GP15MHE3/73 gp15a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1.5A DO204
Packaging: Tape & Box (TB)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: GP15
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5059GPHE3/54 1N5059GPHE3/54 1n5059gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5062GPHE3/54 1N5062GPHE3/54 1n5059gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO204AC
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY127MGPHE3/54 BY127MGPHE3/54 BY127MGP.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GP 1.25KV 1.75A DO204
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1250 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1250 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.75A
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY133GPHE3/54 BY133GPHE3/54 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.3KV 1A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Part Status: Active
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4004GPEHE3/73 1N4004GPEHE3/73 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
B360B-E3/5BT B360B-E3/5BT b360b.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 3A DO214AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS2PH10HM3/84A SS2PH10HM3/84A SS2PH9_PH10_Dec23_2014.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5405-E3/54 1N5405-E3/54 1n5400.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 500V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 2800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7979 Stücke - Preis und Lieferfrist anzeigen
1400+ 0.47 EUR
2800+ 0.43 EUR
BY252P-E3/54 BY252P-E3/54 by251p.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 3A DO201AD
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 2800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3181 Stücke - Preis und Lieferfrist anzeigen
BY253P-E3/54 BY253P-E3/54 by251p.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18 Stücke - Preis und Lieferfrist anzeigen
1N5401-E3/73 1N5401-E3/73 1n5400.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 3A DO201AD
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5402-E3/73 1N5402-E3/73 1n5400.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 3A DO201AD
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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1N5406-E3/73 1N5406-E3/73 1n5400.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 843 Stücke - Preis und Lieferfrist anzeigen
1N5407-E3/73 1N5407-E3/73 1n5400.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 3A DO201AD
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY253P-E3/73 BY253P-E3/73 by251p.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 3A DO201AD
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: BY253
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GP02-40HE3/73 GP02-40HE3/73 gp0220.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 4KV 250MA DO204
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 250mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGP02-16EHE3/73 RGP02-16EHE3/73 rgp02.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.6KV 500MA DO204
Reverse Recovery Time (trr): 300ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 1600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 1600V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGP02-17EHE3/73 RGP02-17EHE3/73 rgp02.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.7KV 500MA DO204
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 1700V
Reverse Recovery Time (trr): 300ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 1700V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGP02-18EHE3/73 RGP02-18EHE3/73 rgp02.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.8KV 500MA DO204
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 1800V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 1800V
Reverse Recovery Time (trr): 300ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5397GPHE3/73 1n5391gp.pdf
1N5397GPHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO204AC
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5395GPHE3/54 1n5391gp.pdf
1N5395GPHE3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO204AC
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5397GPHE3/54 1n5391gp.pdf
1N5397GPHE3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO204AC
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5398GPHE3/54 1n5391gp.pdf
1N5398GPHE3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5615GPHE3/54 1n5615gp.pdf
1N5615GPHE3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1N5615
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5617GPHE3/54 1n5615gp.pdf
1N5617GPHE3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5619GPHE3/54 1n5615gp.pdf
1N5619GPHE3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N5619
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SB240S-E3/73 sb220s.pdf
SB240S-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SB240S-E3/54 sb220s.pdf
SB240S-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 5500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9985 Stücke - Preis und Lieferfrist anzeigen
SB240S-E3/54 sb220s.pdf
SB240S-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 2A
Packaging: Cut Tape (CT)
auf Bestellung 9985 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5500 Stücke - Preis und Lieferfrist anzeigen
BYM07-300-E3/98 packaging.pdf
BYM07-300-E3/98
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 500MA DO213
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6746 Stücke - Preis und Lieferfrist anzeigen
BYM07-300-E3/98 packaging.pdf
BYM07-300-E3/98
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 500MA DO213
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 1301 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5445 Stücke - Preis und Lieferfrist anzeigen
25+ 1.07 EUR
29+ 0.92 EUR
100+ 0.68 EUR
500+ 0.54 EUR
1000+ 0.42 EUR
AU1PJ-M3/84A au1pm.pdf
AU1PJ-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A DO220AA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9831 Stücke - Preis und Lieferfrist anzeigen
AU1PJ-M3/84A au1pm.pdf
AU1PJ-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 839 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8992 Stücke - Preis und Lieferfrist anzeigen
22+ 1.2 EUR
27+ 0.96 EUR
100+ 0.66 EUR
500+ 0.49 EUR
BAT81S-TR bat81s.pdf
BAT81S-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 30MA DO35
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 40V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Current - Average Rectified (Io): 30mA (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Base Part Number: BAT81
Operating Temperature - Junction: 125°C (Max)
auf Bestellung 9586 Stücke
Lieferzeit 21-28 Tag (e)
SSA33L-E3/5AT ssa33l.pdf
SSA33L-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 3A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VESD12-02V-G-08 VESDxx-02V.pdf
VESD12-02V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12V 25V SOD523
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 25W
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Voltage - Breakdown (Min): 14V
Voltage - Reverse Standoff (Typ): 12V (Max)
Unidirectional Channels: 1
Type: Zener
Part Status: Last Time Buy
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: VESD12
Supplier Device Package: SOD-523
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 103474 Stücke - Preis und Lieferfrist anzeigen
VESD12-02V-G-08 VESDxx-02V.pdf
VESD12-02V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12V 25V SOD523
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Base Part Number: VESD12
Supplier Device Package: SOD-523
Package / Case: SC-79, SOD-523
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 25W
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Voltage - Breakdown (Min): 14V
Voltage - Reverse Standoff (Typ): 12V (Max)
Unidirectional Channels: 1
Type: Zener
Part Status: Last Time Buy
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 12738 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 102736 Stücke - Preis und Lieferfrist anzeigen
P6SMB120A-E3/5B p6smb.pdf
P6SMB120A-E3/5B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 102VWM 165VC DO214AA
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 165V
Voltage - Breakdown (Min): 114V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 102V
Current - Peak Pulse (10/1000µs): 3.6A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2979 Stücke - Preis und Lieferfrist anzeigen
SMAJ170A-E3/61 smaj50a.pdf
SMAJ170A-E3/61
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 170V
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Current - Peak Pulse (10/1000µs): 1.09A
Power - Peak Pulse: 300W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3420 Stücke - Preis und Lieferfrist anzeigen
SMAJ170A-E3/61 smaj50a.pdf
SMAJ170A-E3/61
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Cut Tape (CT)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 170V
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Current - Peak Pulse (10/1000µs): 1.09A
Power - Peak Pulse: 300W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
auf Bestellung 82 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3338 Stücke - Preis und Lieferfrist anzeigen
SMBJ90A-E3/52 smbj.pdf
SMBJ90A-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90V 146V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 90V
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Current - Peak Pulse (10/1000µs): 4.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMBJ)
auf Bestellung 750 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1176 Stücke - Preis und Lieferfrist anzeigen
SMBJ90A-E3/52 smbj.pdf
SMBJ90A-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90V 146V DO214AA
Packaging: Cut Tape (CT)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 90V
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Current - Peak Pulse (10/1000µs): 4.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMBJ)
auf Bestellung 953 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 973 Stücke - Preis und Lieferfrist anzeigen
P6SMB68A-E3/52 p6smb.pdf
P6SMB68A-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 58.1VWM 92VC DO214AA
Current - Peak Pulse (10/1000µs): 6.5A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 58.1V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3425 Stücke - Preis und Lieferfrist anzeigen
P4SMA15A-E3/61 p4sma.pdf
P4SMA15A-E3/61
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12.8VWM 21.2VC DO214AC
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 18.9A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1345 Stücke - Preis und Lieferfrist anzeigen
P4SMA15A-E3/61 p4sma.pdf
P4SMA15A-E3/61
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12.8VWM 21.2VC DO214AC
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 18.9A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
auf Bestellung 174 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1171 Stücke - Preis und Lieferfrist anzeigen
24+ 1.12 EUR
31+ 0.85 EUR
100+ 0.53 EUR
SMBJ58A-E3/52 техническая информация smbj.pdf
SMBJ58A-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 58VWM 93.6VC DO214AA
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 6.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Unidirectional Channels: 1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9097 Stücke - Preis und Lieferfrist anzeigen
SMBJ58A-E3/52 техническая информация smbj.pdf
SMBJ58A-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 58VWM 93.6VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 93.6V
Voltage - Breakdown (Min): 64.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 58V
Current - Peak Pulse (10/1000µs): 6.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 644 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8453 Stücke - Preis und Lieferfrist anzeigen
SMBJ7.5A-E3/52 smbj.pdf
SMBJ7.5A-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.5V 12.9V DO214AA
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMBJ)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Voltage - Reverse Standoff (Typ): 7.5V
Unidirectional Channels: 1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 35759 Stücke - Preis und Lieferfrist anzeigen
SMBJ7.5A-E3/52 smbj.pdf
SMBJ7.5A-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.5V 12.9V DO214AA
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Type: Zener
Package / Case: DO-214AA, SMB
Part Status: Active
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Voltage - Reverse Standoff (Typ): 7.5V
auf Bestellung 759 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 35000 Stücke - Preis und Lieferfrist anzeigen
SMBJ16A-E3/52 smbj.pdf
SMBJ16A-E3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 26VC DO214AA
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 16V
Current - Peak Pulse (10/1000µs): 23.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 26V
Voltage - Breakdown (Min): 17.8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 38520 Stücke - Preis und Lieferfrist anzeigen
EGL34FHE3/83 egl34.pdf
EGL34FHE3/83
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 500MA DO213
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
EGL34GHE3/83 egl34.pdf
EGL34GHE3/83
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 500MA DO213
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 400V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM07-150HE3/98 egl34.pdf
BYM07-150HE3/98
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 500MA DO213
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 150V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Base Part Number: BYM07
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM10-1000HE3/96 bym10-xxx.pdf
BYM10-1000HE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
EGL34FHE3/98 egl34.pdf
EGL34FHE3/98
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 500MA DO213
Base Part Number: EGL34
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
EGL34GHE3/98 egl34.pdf
EGL34GHE3/98
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 500MA DO213
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC Reverse (Vr) (Max): 400V
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 500mA
Current - Average Rectified (Io): 500mA
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL34J/1 rgl34a.pdf
RGL34J/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 500MA DO213
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13000 Stücke - Preis und Lieferfrist anzeigen
RGL34J-E3/83 rgl34a.pdf
RGL34J-E3/83
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 500MA DO213
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5472 Stücke - Preis und Lieferfrist anzeigen
RGL34A-E3/98 rgl34a.pdf
RGL34A-E3/98
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 500MA DO213AA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11366 Stücke - Preis und Lieferfrist anzeigen
2500+ 0.41 EUR
5000+ 0.4 EUR
RGL34K-E3/98 rgl34a.pdf
RGL34K-E3/98
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 500MA DO213
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10095 Stücke - Preis und Lieferfrist anzeigen
SBYV26CHE3/73 sbyv26c.pdf
SBYV26CHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SBYV26CHE3/54 sbyv26c.pdf
SBYV26CHE3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SSA34HE3/5AT ssa33l.pdf
SSA34HE3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 40V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SSA34
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL34K-E3/83 rgl34a.pdf
RGL34K-E3/83
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 500MA DO213
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8500 Stücke - Preis und Lieferfrist anzeigen
SS24-E3/5BT ss22.pdf
SS24-E3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO214AA
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
auf Bestellung 3200 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7171 Stücke - Preis und Lieferfrist anzeigen
3200+ 0.41 EUR
VS-11DQ10 VS-11DQ09,10(M3).pdf
VS-11DQ10
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 110 Stücke - Preis und Lieferfrist anzeigen
BYS11-90HE3/TR bys1190.pdf
BYS11-90HE3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
US1DHE3/61T us1.pdf
US1DHE3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214AC
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
US1GHE3/61T us1.pdf
US1GHE3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
EGP10GE-E3/54 egp10a.pdf
EGP10GE-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Diode Type: Standard
Part Status: Last Time Buy
Base Part Number: EGP10
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10740 Stücke - Preis und Lieferfrist anzeigen
GF1B-E3/5CA gf1.pdf
GF1B-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL34JHE3/83 rgl34a.pdf
RGL34JHE3/83
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 500MA DO213
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SSA33L-E3/5AT ssa33l.pdf
SSA33L-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 3A DO214AC
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL34AHE3/98 rgl34a.pdf
RGL34AHE3/98
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL34JHE3/98 rgl34a.pdf
RGL34JHE3/98
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 500MA DO213
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL34KHE3/98 rgl34a.pdf
RGL34KHE3/98
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 500MA DO213
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 35155 Stücke - Preis und Lieferfrist anzeigen
2500+ 0.37 EUR
5000+ 0.36 EUR
BYM11-1000HE3/96 bym1150.pdf
BYM11-1000HE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM11-100HE3/96 bym1150.pdf
BYM11-100HE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM11-200HE3/96 bym1150.pdf
BYM11-200HE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM11-400HE3/96 bym1150.pdf
BYM11-400HE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM11-50HE3/96 bym1150.pdf
BYM11-50HE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM11-600HE3/96 bym1150.pdf
BYM11-600HE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO213AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM11-800HE3/96 bym1150.pdf
BYM11-800HE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO213AB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41AHE3/96 bym1150.pdf
RGL41AHE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41BHE3/96 bym1150.pdf
RGL41BHE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41DHE3/96 bym1150.pdf
RGL41DHE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41GHE3/96 bym1150.pdf
RGL41GHE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41JHE3/96 bym1150.pdf
RGL41JHE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO213AB
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41KHE3/96 bym1150.pdf
RGL41KHE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41MHE3/96 bym1150.pdf
RGL41MHE3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
EGP10G-E3/54 egp10a.pdf
EGP10G-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5062GPHE3/73 1n5059gp.pdf
1N5062GPHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AC
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY127MGPHE3/73 BY127MGP.pdf
BY127MGPHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.25KV 1.75A DO204
Current - Reverse Leakage @ Vr: 5 µA @ 1250 V
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1250 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.75A
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY133GPHE3/73
BY133GPHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 2 µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GP15MHE3/73 gp15a.pdf
GP15MHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.5A DO204
Packaging: Tape & Box (TB)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: GP15
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5059GPHE3/54 1n5059gp.pdf
1N5059GPHE3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5062GPHE3/54 1n5059gp.pdf
1N5062GPHE3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AC
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY127MGPHE3/54 BY127MGP.pdf
BY127MGPHE3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.25KV 1.75A DO204
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1250 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1250 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.75A
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY133GPHE3/54
BY133GPHE3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Part Status: Active
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4004GPEHE3/73 1n4001gp.pdf
1N4004GPEHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
B360B-E3/5BT b360b.pdf
B360B-E3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS2PH10HM3/84A SS2PH9_PH10_Dec23_2014.pdf
SS2PH10HM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5405-E3/54 1n5400.pdf
1N5405-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 500V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 2800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7979 Stücke - Preis und Lieferfrist anzeigen
1400+ 0.47 EUR
2800+ 0.43 EUR
BY252P-E3/54 by251p.pdf
BY252P-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO201AD
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 2800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3181 Stücke - Preis und Lieferfrist anzeigen
BY253P-E3/54 by251p.pdf
BY253P-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18 Stücke - Preis und Lieferfrist anzeigen
1N5401-E3/73 1n5400.pdf
1N5401-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO201AD
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5402-E3/73 1n5400.pdf
1N5402-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO201AD
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9 Stücke - Preis und Lieferfrist anzeigen
1N5406-E3/73 1n5400.pdf
1N5406-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 843 Stücke - Preis und Lieferfrist anzeigen
1N5407-E3/73 1n5400.pdf
1N5407-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO201AD
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY253P-E3/73 by251p.pdf
BY253P-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: BY253
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GP02-40HE3/73 gp0220.pdf
GP02-40HE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 4KV 250MA DO204
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 250mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGP02-16EHE3/73 rgp02.pdf
RGP02-16EHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 500MA DO204
Reverse Recovery Time (trr): 300ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 1600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 1600V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGP02-17EHE3/73 rgp02.pdf
RGP02-17EHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.7KV 500MA DO204
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 1700V
Reverse Recovery Time (trr): 300ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 1700V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGP02-18EHE3/73 rgp02.pdf
RGP02-18EHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.8KV 500MA DO204
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 1800V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 1800V
Reverse Recovery Time (trr): 300ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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