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SSC53L-E3/9AT SSC53L-E3/9AT Vishay General Semiconductor - Diodes Division ssc53l.pdf Description: DIODE SCHOTTKY 30V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 30 V
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SSC53L-E3/9AT SSC53L-E3/9AT Vishay General Semiconductor - Diodes Division ssc53l.pdf Description: DIODE SCHOTTKY 30V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 30 V
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SMB10J36A-M3/52 Vishay General Semiconductor - Diodes Division smb10j40a.pdf Description: TVS DIODE 36VWM 58.1VC DO214AA
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S1MHE3_A/H S1MHE3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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S1MHE3_A/H S1MHE3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
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SMCJ8.5AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE DO214AB
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SMCJ6.5AHE3_A/H SMCJ6.5AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ6.5AHE3_A/I SMCJ6.5AHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ6.5AHM3_A/H SMCJ6.5AHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ8.5AHE3_A/H SMBJ8.5AHE3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 8.5VWM 14.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TZS4686-GS08 TZS4686-GS08 Vishay General Semiconductor - Diodes Division TZS4678_to_TZS4717_Rev1.9_22-Feb-18.pdf Description: DIODE ZENER 3.9V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
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V1F6HM3/I Vishay General Semiconductor - Diodes Division v1f6.pdf Description: 1A 60V SMF TRENCH SKY RECT
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TZM5260B-GS08 TZM5260B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 43V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
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TZM5260B-GS08 TZM5260B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 43V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
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TPSMB9.1AHE3_A/H TPSMB9.1AHE3_A/H Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 7.78V 13.4V DO214AA
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BAW27-TAP BAW27-TAP Vishay General Semiconductor - Diodes Division baw27.pdf Description: DIODE GEN PURP 60V 600MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 100 nA @ 60 V
Qualification: AEC-Q101
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EGF1B-E3/67A EGF1B-E3/67A Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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EGF1B-E3/67A EGF1B-E3/67A Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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GF1B-E3/5CA GF1B-E3/5CA Vishay General Semiconductor - Diodes Division gf1x.pdf Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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EGF1B-E3/5CA EGF1B-E3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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EGF1B-E3/5CA EGF1B-E3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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EGF1BHE3_A/H Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
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EGF1BHE3_A/I Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
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EGF1B-1HE3_A/I EGF1B-1HE3_A/I Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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EGF1B-1HE3_A/H EGF1B-1HE3_A/H Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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EGF1B-1HE3/5CA EGF1B-1HE3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EGF1B-1HE3/67A EGF1B-1HE3/67A Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CS2M-E3/H Vishay General Semiconductor - Diodes Division cs2dgjkm.pdf Description: DIODE GEN PURP 1KV 2A DO214AA
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SL12-E3/5AT SL12-E3/5AT Vishay General Semiconductor - Diodes Division sl12.pdf Description: DIODE SCHOTTKY 20V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
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BU2010L-7001M3/51 Vishay General Semiconductor - Diodes Division Description: DIODE BRIDGE 20A 1000V
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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BU2010L-7001E3/51 Vishay General Semiconductor - Diodes Division Description: DIODE BRIDGE 20A 1000V
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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SM5S28ATHE3/I Vishay General Semiconductor - Diodes Division sm5s10atthrusm5s36at.pdf Description: TVS DIODE 28VWM 45.4VC DO218AC
Packaging: Tape & Reel (TR)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 79A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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TZMC18-GS18 TZMC18-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 18V 500MW SOD80
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TZMC18-GS18 TZMC18-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 18V 500MW SOD80
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53+0.33 EUR
100+0.18 EUR
500+0.12 EUR
1000+0.079 EUR
2000+0.071 EUR
5000+0.062 EUR
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SMCJ20AHE3_A/H SMCJ20AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ20AHE3_A/I SMCJ20AHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB39AHM3_A/I P6SMB39AHM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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P6SMB39AHM3/H P6SMB39AHM3/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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P6SMB39AHM3/I P6SMB39AHM3/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V12P12HM3_A/H V12P12HM3_A/H Vishay General Semiconductor - Diodes Division v12p12.pdf Description: DIODE SCHOTTKY 120V 3.9A TO277A
Produkt ist nicht verfügbar
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V12P12HM3_A/H V12P12HM3_A/H Vishay General Semiconductor - Diodes Division v12p12.pdf Description: DIODE SCHOTTKY 120V 3.9A TO277A
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BZD27B47P-M3-08 BZD27B47P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27B47P-M3-08 BZD27B47P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27C36P-E3-08 BZD27C36P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
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6000+0.13 EUR
9000+0.12 EUR
21000+0.11 EUR
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BZD27C36P-E3-08 BZD27C36P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
auf Bestellung 23791 Stücke:
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BZD27B36P-E3-08 BZD27B36P-E3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
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BZD27B36P-E3-18 BZD27B36P-E3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
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BZD27B36P-M3-18 BZD27B36P-M3-18 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
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BZD27B47P-E3-08 BZD27B47P-E3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27B47P-E3-18 BZD27B47P-E3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27B47P-M3-18 BZD27B47P-M3-18 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27B36P-HE3-08 BZD27B36P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
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BZD27B36P-HE3-18 BZD27B36P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27B47P-HE3-08 BZD27B47P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B47P-HE3-18 BZD27B47P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GP10-4004-E3/73 GP10-4004-E3/73 Vishay General Semiconductor - Diodes Division gp10-400x.pdf Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Produkt ist nicht verfügbar
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PLZ2V2B-G3/H PLZ2V2B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 2.32V 960MW DO219AC
Tolerance: ±4.1%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.32 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 700 mV
auf Bestellung 4500 Stücke:
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4500+0.076 EUR
Mindestbestellmenge: 4500
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PLZ2V2B-G3/H PLZ2V2B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 2.32V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±4.1%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.32 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 700 mV
auf Bestellung 13865 Stücke:
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BAT54A-E3-18 BAT54A-E3-18 Vishay General Semiconductor - Diodes Division BAT54_A_C_S_Rev1.9_3-16-16.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 44731 Stücke:
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56+0.32 EUR
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5000+0.076 EUR
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BAT54A-HE3-18 BAT54A-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SSC53L-E3/9AT ssc53l.pdf
SSC53L-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 30 V
Produkt ist nicht verfügbar
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SSC53L-E3/9AT ssc53l.pdf
SSC53L-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 30 V
auf Bestellung 1871 Stücke:
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Anzahl Preis
19+0.97 EUR
22+0.83 EUR
100+0.57 EUR
500+0.48 EUR
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SMB10J36A-M3/52 smb10j40a.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO214AA
Produkt ist nicht verfügbar
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S1MHE3_A/H s1.pdf
S1MHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 5400 Stücke:
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Anzahl Preis
1800+0.096 EUR
3600+0.089 EUR
Mindestbestellmenge: 1800
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S1MHE3_A/H s1.pdf
S1MHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6416 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
62+0.29 EUR
101+0.18 EUR
500+0.14 EUR
Mindestbestellmenge: 42
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SMCJ8.5AHE3_A/H smcj.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE DO214AB
Produkt ist nicht verfügbar
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SMCJ6.5AHE3_A/H smcj.pdf
SMCJ6.5AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ6.5AHE3_A/I smcj.pdf
SMCJ6.5AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ6.5AHM3_A/H smcj.pdf
SMCJ6.5AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ8.5AHE3_A/H smbj.pdf
SMBJ8.5AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5VWM 14.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TZS4686-GS08 TZS4678_to_TZS4717_Rev1.9_22-Feb-18.pdf
TZS4686-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.082 EUR
5000+0.076 EUR
Mindestbestellmenge: 2500
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V1F6HM3/I v1f6.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1A 60V SMF TRENCH SKY RECT
Produkt ist nicht verfügbar
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TZM5260B-GS08 tzm5221.pdf
TZM5260B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.058 EUR
5000+0.052 EUR
7500+0.049 EUR
12500+0.046 EUR
Mindestbestellmenge: 2500
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TZM5260B-GS08 tzm5221.pdf
TZM5260B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
auf Bestellung 14564 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
120+0.15 EUR
179+0.099 EUR
500+0.075 EUR
1000+0.067 EUR
Mindestbestellmenge: 84
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TPSMB9.1AHE3_A/H tpsmb.pdf
TPSMB9.1AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78V 13.4V DO214AA
Produkt ist nicht verfügbar
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BAW27-TAP baw27.pdf
BAW27-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 60V 600MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 100 nA @ 60 V
Qualification: AEC-Q101
auf Bestellung 11847 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
89+0.2 EUR
182+0.097 EUR
500+0.081 EUR
1000+0.056 EUR
2000+0.049 EUR
5000+0.045 EUR
Mindestbestellmenge: 63
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EGF1B-E3/67A egf1a.pdf
EGF1B-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.4 EUR
3000+0.36 EUR
Mindestbestellmenge: 1500
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EGF1B-E3/67A egf1a.pdf
EGF1B-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
Mindestbestellmenge: 10
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GF1B-E3/5CA gf1x.pdf
GF1B-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 2348 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
29+0.62 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.31 EUR
2000+0.29 EUR
Mindestbestellmenge: 19
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EGF1B-E3/5CA egf1a.pdf
EGF1B-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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EGF1B-E3/5CA egf1a.pdf
EGF1B-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 4515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
20+0.91 EUR
100+0.72 EUR
500+0.55 EUR
1000+0.46 EUR
Mindestbestellmenge: 13
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EGF1BHE3_A/H egf1a.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Produkt ist nicht verfügbar
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EGF1BHE3_A/I egf1a.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Produkt ist nicht verfügbar
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EGF1B-1HE3_A/I egf1a.pdf
EGF1B-1HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EGF1B-1HE3_A/H egf1a.pdf
EGF1B-1HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EGF1B-1HE3/5CA egf1a.pdf
EGF1B-1HE3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EGF1B-1HE3/67A egf1a.pdf
EGF1B-1HE3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CS2M-E3/H cs2dgjkm.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 2A DO214AA
Produkt ist nicht verfügbar
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SL12-E3/5AT sl12.pdf
SL12-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
auf Bestellung 16006 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
32+0.56 EUR
100+0.28 EUR
500+0.25 EUR
1000+0.2 EUR
2000+0.17 EUR
Mindestbestellmenge: 23
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BU2010L-7001M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE BRIDGE 20A 1000V
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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BU2010L-7001E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE BRIDGE 20A 1000V
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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SM5S28ATHE3/I sm5s10atthrusm5s36at.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO218AC
Packaging: Tape & Reel (TR)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 79A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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TZMC18-GS18 tzm.pdf
TZMC18-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
Produkt ist nicht verfügbar
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TZMC18-GS18 tzm.pdf
TZMC18-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
auf Bestellung 6905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
53+0.33 EUR
100+0.18 EUR
500+0.12 EUR
1000+0.079 EUR
2000+0.071 EUR
5000+0.062 EUR
Mindestbestellmenge: 44
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SMCJ20AHE3_A/H smcj.pdf
SMCJ20AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ20AHE3_A/I smcj.pdf
SMCJ20AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39AHM3_A/I p6smb.pdf
P6SMB39AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39AHM3/H p6smb.pdf
P6SMB39AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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P6SMB39AHM3/I p6smb.pdf
P6SMB39AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V12P12HM3_A/H v12p12.pdf
V12P12HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 3.9A TO277A
Produkt ist nicht verfügbar
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V12P12HM3_A/H v12p12.pdf
V12P12HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 3.9A TO277A
Produkt ist nicht verfügbar
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BZD27B47P-M3-08 bzd27b-mseries.pdf
BZD27B47P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B47P-M3-08 bzd27b-mseries.pdf
BZD27B47P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
auf Bestellung 1326 Stücke:
Lieferzeit 10-14 Tag (e)
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BZD27C36P-E3-08 bzd27series.pdf
BZD27C36P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.13 EUR
9000+0.12 EUR
21000+0.11 EUR
Mindestbestellmenge: 3000
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BZD27C36P-E3-08 bzd27series.pdf
BZD27C36P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
auf Bestellung 23791 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
54+0.33 EUR
104+0.17 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 36
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BZD27B36P-E3-08 bzd27bseries.pdf
BZD27B36P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B36P-E3-18 bzd27bseries.pdf
BZD27B36P-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B36P-M3-18 bzd27b-mseries.pdf
BZD27B36P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B47P-E3-08 bzd27bseries.pdf
BZD27B47P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B47P-E3-18 bzd27bseries.pdf
BZD27B47P-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B47P-M3-18 bzd27b-mseries.pdf
BZD27B47P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B36P-HE3-08 bzd27bseries.pdf
BZD27B36P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B36P-HE3-18 bzd27bseries.pdf
BZD27B36P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B47P-HE3-08 bzd27bseries.pdf
BZD27B47P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B47P-HE3-18 bzd27bseries.pdf
BZD27B47P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GP10-4004-E3/73 gp10-400x.pdf
GP10-4004-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Produkt ist nicht verfügbar
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PLZ2V2B-G3/H plzseries.pdf
PLZ2V2B-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.32V 960MW DO219AC
Tolerance: ±4.1%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.32 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 700 mV
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.076 EUR
Mindestbestellmenge: 4500
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PLZ2V2B-G3/H plzseries.pdf
PLZ2V2B-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.32V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±4.1%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.32 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 700 mV
auf Bestellung 13865 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
57+0.31 EUR
117+0.15 EUR
500+0.13 EUR
1000+0.088 EUR
2000+0.076 EUR
Mindestbestellmenge: 39
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BAT54A-E3-18 BAT54_A_C_S_Rev1.9_3-16-16.pdf
BAT54A-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 44731 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
82+0.22 EUR
126+0.14 EUR
500+0.11 EUR
1000+0.086 EUR
2000+0.082 EUR
5000+0.076 EUR
Mindestbestellmenge: 56
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BAT54A-HE3-18
BAT54A-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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