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SMCJ6.5AHE3_A/I SMCJ6.5AHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 6.5VWM 11.2V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ6.5AHM3_A/H SMCJ6.5AHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 6.5VWM 11.2V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ8.5AHE3_A/H SMBJ8.5AHE3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 8.5VWM 14.4V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TZS4686-GS08 TZS4686-GS08 Vishay General Semiconductor - Diodes Division TZS4678_to_TZS4717_Rev1.9_22-Feb-18.pdf Description: DIODE ZENER 3.9V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
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V1F6HM3/I Vishay General Semiconductor - Diodes Division v1f6.pdf Description: 1A 60V SMF TRENCH SKY RECT
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TZM5260B-GS08 TZM5260B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 43V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
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TZM5260B-GS08 TZM5260B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 43V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
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TPSMB9.1AHE3_A/H TPSMB9.1AHE3_A/H Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 7.78V 13.4V DO214AA
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BAW27-TAP BAW27-TAP Vishay General Semiconductor - Diodes Division baw27.pdf Description: DIODE GEN PURP 60V 600MA DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 600mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
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EGF1B-E3/67A EGF1B-E3/67A Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 100V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
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EGF1B-E3/67A EGF1B-E3/67A Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 100V 1A DO214BA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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GF1B-E3/5CA GF1B-E3/5CA Vishay General Semiconductor - Diodes Division gf1x.pdf Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
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EGF1B-E3/5CA EGF1B-E3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 100V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
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EGF1B-E3/5CA EGF1B-E3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 100V 1A DO214BA
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
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EGF1BHE3_A/H Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
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EGF1BHE3_A/I Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
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EGF1B-1HE3_A/I EGF1B-1HE3_A/I Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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EGF1B-1HE3_A/H EGF1B-1HE3_A/H Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
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EGF1B-1HE3/5CA EGF1B-1HE3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
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EGF1B-1HE3/67A EGF1B-1HE3/67A Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
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CS2M-E3/H Vishay General Semiconductor - Diodes Division cs2dgjkm.pdf Description: DIODE GEN PURP 1KV 2A DO214AA
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SL12-E3/5AT SL12-E3/5AT Vishay General Semiconductor - Diodes Division sl12.pdf Description: DIODE SCHOTTKY 20V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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BU2010L-7001M3/51 Vishay General Semiconductor - Diodes Division Description: DIODE BRIDGE 20A 1000V
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tape & Reel (TR)
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BU2010L-7001E3/51 Vishay General Semiconductor - Diodes Division Description: DIODE BRIDGE 20A 1000V
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tape & Reel (TR)
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SM5S28ATHE3/I Vishay General Semiconductor - Diodes Division sm5s10atthrusm5s36at.pdf Description: TVS DIODE 28VWM 45.4VC DO218AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3600W (3.6kW)
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Unidirectional Channels: 1
Supplier Device Package: DO-218AC
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 79A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AC
Packaging: Tape & Reel (TR)
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TZMC18-GS18 TZMC18-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 18V 500MW SOD80
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TZMC18-GS18 TZMC18-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 18V 500MW SOD80
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SMCJ20AHE3_A/H SMCJ20AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ20AHE3_A/I SMCJ20AHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB39AHM3_A/I P6SMB39AHM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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P6SMB39AHM3/H P6SMB39AHM3/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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P6SMB39AHM3/I P6SMB39AHM3/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V12P12HM3_A/H V12P12HM3_A/H Vishay General Semiconductor - Diodes Division v12p12.pdf Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
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V12P12HM3_A/H V12P12HM3_A/H Vishay General Semiconductor - Diodes Division v12p12.pdf Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
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BZD27B47P-M3-08 BZD27B47P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27B47P-M3-08 BZD27B47P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27C36P-E3-08 BZD27C36P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
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BZD27C36P-E3-08 BZD27C36P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
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BZD27B36P-E3-08 BZD27B36P-E3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
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BZD27B36P-E3-18 BZD27B36P-E3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
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BZD27B36P-M3-18 BZD27B36P-M3-18 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
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BZD27B47P-E3-08 BZD27B47P-E3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27B47P-E3-18 BZD27B47P-E3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27B47P-M3-18 BZD27B47P-M3-18 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27B36P-HE3-08 BZD27B36P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
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BZD27B36P-HE3-18 BZD27B36P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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BZD27B47P-HE3-08 BZD27B47P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27B47P-HE3-18 BZD27B47P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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GP10-4004-E3/73 GP10-4004-E3/73 Vishay General Semiconductor - Diodes Division gp10-400x.pdf Description: DIODE STANDARD 400V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PLZ2V2B-G3/H PLZ2V2B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 2.32V 960MW DO219AC
Current - Reverse Leakage @ Vr: 120 µA @ 700 mV
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 120 Ohms
Voltage - Zener (Nom) (Vz): 2.32 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±4.1%
Packaging: Tape & Reel (TR)
auf Bestellung 4500 Stücke:
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PLZ2V2B-G3/H PLZ2V2B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 2.32V 960MW DO219AC
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±4.1%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 120 µA @ 700 mV
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 120 Ohms
Voltage - Zener (Nom) (Vz): 2.32 V
Operating Temperature: 150°C (TJ)
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BAT54A-E3-18 BAT54A-E3-18 Vishay General Semiconductor - Diodes Division bat54_bat54a_bat54c_bat54s.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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500+0.26 EUR
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BAT54A-HE3-18 BAT54A-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT54A-HE3-18 BAT54A-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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BZX584C5V1-HG3-08 BZX584C5V1-HG3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 5.1V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
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BZX584C5V1-HG3-08 BZX584C5V1-HG3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 5.1V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
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BZX584C9V1-HG3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER AUTO 300MW SOD523
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BZX584C9V1-HG3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER AUTO 300MW SOD523
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BZX584C9V1-G3-08 BZX584C9V1-G3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 9.1V 200MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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BZX584C9V1-G3-08 BZX584C9V1-G3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 9.1V 200MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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SMCJ6.5AHE3_A/I smcj.pdf
SMCJ6.5AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.5VWM 11.2V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ6.5AHM3_A/H smcj.pdf
SMCJ6.5AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.5VWM 11.2V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ8.5AHE3_A/H smbj.pdf
SMBJ8.5AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5VWM 14.4V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TZS4686-GS08 TZS4678_to_TZS4717_Rev1.9_22-Feb-18.pdf
TZS4686-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
2500+0.098 EUR
5000+0.09 EUR
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V1F6HM3/I v1f6.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1A 60V SMF TRENCH SKY RECT
Produkt ist nicht verfügbar
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TZM5260B-GS08 tzm5221.pdf
TZM5260B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
2500+0.073 EUR
5000+0.065 EUR
7500+0.061 EUR
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TZM5260B-GS08 tzm5221.pdf
TZM5260B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
auf Bestellung 14476 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
164+0.13 EUR
282+0.074 EUR
500+0.07 EUR
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TPSMB9.1AHE3_A/H tpsmb.pdf
TPSMB9.1AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78V 13.4V DO214AA
Produkt ist nicht verfügbar
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BAW27-TAP baw27.pdf
BAW27-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 60V 600MA DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 600mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
auf Bestellung 11847 Stücke:
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AnzahlPrivatkunde
63+0.33 EUR
89+0.24 EUR
182+0.12 EUR
500+0.096 EUR
1000+0.067 EUR
2000+0.058 EUR
5000+0.054 EUR
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EGF1B-E3/67A egf1a.pdf
EGF1B-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.48 EUR
3000+0.43 EUR
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EGF1B-E3/67A egf1a.pdf
EGF1B-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 4500 Stücke:
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AnzahlPrivatkunde
10+2.09 EUR
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GF1B-E3/5CA gf1x.pdf
GF1B-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
auf Bestellung 2348 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
29+0.74 EUR
100+0.56 EUR
500+0.44 EUR
1000+0.37 EUR
2000+0.35 EUR
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EGF1B-E3/5CA egf1a.pdf
EGF1B-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EGF1B-E3/5CA egf1a.pdf
EGF1B-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
auf Bestellung 4515 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.63 EUR
20+1.08 EUR
100+0.86 EUR
500+0.65 EUR
1000+0.55 EUR
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EGF1BHE3_A/H egf1a.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Produkt ist nicht verfügbar
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EGF1BHE3_A/I egf1a.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGF1B-1HE3_A/I egf1a.pdf
EGF1B-1HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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EGF1B-1HE3_A/H egf1a.pdf
EGF1B-1HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EGF1B-1HE3/5CA egf1a.pdf
EGF1B-1HE3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar
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EGF1B-1HE3/67A egf1a.pdf
EGF1B-1HE3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CS2M-E3/H cs2dgjkm.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 2A DO214AA
Produkt ist nicht verfügbar
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SL12-E3/5AT sl12.pdf
SL12-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 16006 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
32+0.67 EUR
100+0.33 EUR
500+0.3 EUR
1000+0.24 EUR
2000+0.2 EUR
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BU2010L-7001M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE BRIDGE 20A 1000V
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BU2010L-7001E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE BRIDGE 20A 1000V
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SM5S28ATHE3/I sm5s10atthrusm5s36at.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO218AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3600W (3.6kW)
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Unidirectional Channels: 1
Supplier Device Package: DO-218AC
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 79A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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TZMC18-GS18 tzm.pdf
TZMC18-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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TZMC18-GS18 tzm.pdf
TZMC18-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
auf Bestellung 6905 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
53+0.39 EUR
100+0.21 EUR
500+0.14 EUR
1000+0.094 EUR
2000+0.084 EUR
5000+0.074 EUR
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SMCJ20AHE3_A/H smcj.pdf
SMCJ20AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ20AHE3_A/I smcj.pdf
SMCJ20AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39AHM3_A/I p6smb.pdf
P6SMB39AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39AHM3/H p6smb.pdf
P6SMB39AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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P6SMB39AHM3/I p6smb.pdf
P6SMB39AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V12P12HM3_A/H v12p12.pdf
V12P12HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.05 EUR
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V12P12HM3_A/H v12p12.pdf
V12P12HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 2313 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.53 EUR
10+2.25 EUR
100+1.51 EUR
500+1.2 EUR
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BZD27B47P-M3-08 bzd27b-mseries.pdf
BZD27B47P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BZD27B47P-M3-08 bzd27b-mseries.pdf
BZD27B47P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
auf Bestellung 1326 Stücke:
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BZD27C36P-E3-08 bzd27series.pdf
BZD27C36P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.29 EUR
Mindestbestellmenge: 3000 Stücke
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BZD27C36P-E3-08 bzd27series.pdf
BZD27C36P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
auf Bestellung 4743 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.26 EUR
27+0.79 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.35 EUR
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BZD27B36P-E3-08 bzd27bseries.pdf
BZD27B36P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B36P-E3-18 bzd27bseries.pdf
BZD27B36P-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
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BZD27B36P-M3-18 bzd27b-mseries.pdf
BZD27B36P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
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BZD27B47P-E3-08 bzd27bseries.pdf
BZD27B47P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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BZD27B47P-E3-18 bzd27bseries.pdf
BZD27B47P-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
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BZD27B47P-M3-18 bzd27b-mseries.pdf
BZD27B47P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
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BZD27B36P-HE3-08 bzd27bseries.pdf
BZD27B36P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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BZD27B36P-HE3-18 bzd27bseries.pdf
BZD27B36P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
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BZD27B47P-HE3-08 bzd27bseries.pdf
BZD27B47P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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BZD27B47P-HE3-18 bzd27bseries.pdf
BZD27B47P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
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GP10-4004-E3/73 gp10-400x.pdf
GP10-4004-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PLZ2V2B-G3/H plzseries.pdf
PLZ2V2B-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.32V 960MW DO219AC
Current - Reverse Leakage @ Vr: 120 µA @ 700 mV
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 120 Ohms
Voltage - Zener (Nom) (Vz): 2.32 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±4.1%
Packaging: Tape & Reel (TR)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4500+0.09 EUR
Mindestbestellmenge: 4500 Stücke
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PLZ2V2B-G3/H plzseries.pdf
PLZ2V2B-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.32V 960MW DO219AC
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±4.1%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 120 µA @ 700 mV
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 120 Ohms
Voltage - Zener (Nom) (Vz): 2.32 V
Operating Temperature: 150°C (TJ)
auf Bestellung 13865 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
57+0.37 EUR
117+0.18 EUR
500+0.15 EUR
1000+0.1 EUR
2000+0.09 EUR
Mindestbestellmenge: 39 Stücke
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BAT54A-E3-18 bat54_bat54a_bat54c_bat54s.pdf
BAT54A-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 31015 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.88 EUR
39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.2 EUR
5000+0.18 EUR
Mindestbestellmenge: 24 Stücke
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BAT54A-HE3-18
BAT54A-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BAT54A-HE3-18
BAT54A-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
auf Bestellung 6525 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
48+0.44 EUR
100+0.21 EUR
500+0.18 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.1 EUR
Mindestbestellmenge: 34 Stücke
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BZX584C5V1-HG3-08 bzx584c-series.pdf
BZX584C5V1-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.12 EUR
Mindestbestellmenge: 8000 Stücke
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BZX584C5V1-HG3-08 bzx584c-series.pdf
BZX584C5V1-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13135 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
53+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.17 EUR
2000+0.14 EUR
Mindestbestellmenge: 33 Stücke
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BZX584C9V1-HG3-08 bzx584c-series.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER AUTO 300MW SOD523
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 8000 Stücke
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BZX584C9V1-HG3-08 bzx584c-series.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER AUTO 300MW SOD523
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
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BZX584C9V1-G3-08 bzx584c-series.pdf
BZX584C9V1-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 200MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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BZX584C9V1-G3-08 bzx584c-series.pdf
BZX584C9V1-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 200MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
auf Bestellung 4234 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
36+0.58 EUR
58+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 36 Stücke
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