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EGF1B-1HE3_A/H EGF1B-1HE3_A/H Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EGF1B-1HE3/5CA EGF1B-1HE3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar
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EGF1B-1HE3/67A EGF1B-1HE3/67A Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CS2M-E3/H Vishay General Semiconductor - Diodes Division cs2dgjkm.pdf Description: DIODE GEN PURP 1KV 2A DO214AA
Produkt ist nicht verfügbar
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SL12-E3/5AT SL12-E3/5AT Vishay General Semiconductor - Diodes Division sl12.pdf Description: DIODE SCHOTTKY 20V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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23+0.79 EUR
32+0.56 EUR
100+0.28 EUR
500+0.25 EUR
1000+0.2 EUR
2000+0.17 EUR
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BU2010L-7001M3/51 Vishay General Semiconductor - Diodes Division Description: DIODE BRIDGE 20A 1000V
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tape & Reel (TR)
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BU2010L-7001E3/51 Vishay General Semiconductor - Diodes Division Description: DIODE BRIDGE 20A 1000V
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SM5S28ATHE3/I Vishay General Semiconductor - Diodes Division sm5s10atthrusm5s36at.pdf Description: TVS DIODE 28VWM 45.4VC DO218AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3600W (3.6kW)
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Unidirectional Channels: 1
Supplier Device Package: DO-218AC
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 79A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TZMC18-GS18 TZMC18-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 18V 500MW SOD80
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TZMC18-GS18 TZMC18-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 18V 500MW SOD80
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53+0.33 EUR
100+0.18 EUR
500+0.12 EUR
1000+0.079 EUR
2000+0.071 EUR
5000+0.062 EUR
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SMCJ20AHE3_A/H SMCJ20AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ20AHE3_A/I SMCJ20AHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB39AHM3_A/I P6SMB39AHM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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P6SMB39AHM3/H P6SMB39AHM3/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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P6SMB39AHM3/I P6SMB39AHM3/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V12P12HM3_A/H V12P12HM3_A/H Vishay General Semiconductor - Diodes Division v12p12.pdf Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
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1500+0.88 EUR
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V12P12HM3_A/H V12P12HM3_A/H Vishay General Semiconductor - Diodes Division v12p12.pdf Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
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500+1.01 EUR
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BZD27B47P-M3-08 BZD27B47P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27B47P-M3-08 BZD27B47P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27C36P-E3-08 BZD27C36P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
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BZD27C36P-E3-08 BZD27C36P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
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BZD27B36P-E3-08 BZD27B36P-E3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
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BZD27B36P-E3-18 BZD27B36P-E3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
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BZD27B36P-M3-18 BZD27B36P-M3-18 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
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BZD27B47P-E3-08 BZD27B47P-E3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27B47P-E3-18 BZD27B47P-E3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27B47P-M3-18 BZD27B47P-M3-18 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27B36P-HE3-08 BZD27B36P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
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BZD27B36P-HE3-18 BZD27B36P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 36V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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BZD27B47P-HE3-08 BZD27B47P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
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BZD27B47P-HE3-18 BZD27B47P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 47V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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GP10-4004-E3/73 GP10-4004-E3/73 Vishay General Semiconductor - Diodes Division gp10-400x.pdf Description: DIODE STANDARD 400V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
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PLZ2V2B-G3/H PLZ2V2B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 2.32V 960MW DO219AC
Current - Reverse Leakage @ Vr: 120 µA @ 700 mV
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 120 Ohms
Voltage - Zener (Nom) (Vz): 2.32 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±4.1%
Packaging: Tape & Reel (TR)
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PLZ2V2B-G3/H PLZ2V2B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 2.32V 960MW DO219AC
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±4.1%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 120 µA @ 700 mV
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 120 Ohms
Voltage - Zener (Nom) (Vz): 2.32 V
Operating Temperature: 150°C (TJ)
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500+0.13 EUR
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BAT54A-E3-18 BAT54A-E3-18 Vishay General Semiconductor - Diodes Division bat54_bat54a_bat54c_bat54s.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 31015 Stücke:
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24+0.74 EUR
39+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
2000+0.17 EUR
5000+0.15 EUR
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BAT54A-HE3-18 BAT54A-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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BAT54A-HE3-18 BAT54A-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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BZX584C5V1-HG3-08 BZX584C5V1-HG3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 5.1V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX584C5V1-HG3-08 BZX584C5V1-HG3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 5.1V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
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BZX584C9V1-HG3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER AUTO 300MW SOD523
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BZX584C9V1-HG3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER AUTO 300MW SOD523
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BZX584C9V1-G3-08 BZX584C9V1-G3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 9.1V 200MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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BZX584C9V1-G3-08 BZX584C9V1-G3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 9.1V 200MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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BZX584C5V1-G3-08 BZX584C5V1-G3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 5.1V 200MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
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BZX584C5V1-G3-08 BZX584C5V1-G3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 5.1V 200MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
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SMCJ48CAHE3_A/H SMCJ48CAHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 48VWM 77.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FEPB16DT-E3/45 FEPB16DT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 200V 8A TO263AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Produkt ist nicht verfügbar
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MMBZ5241B-E3-08 MMBZ5241B-E3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 11V 225MW SOT23-3
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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MMBZ5241B-E3-08 MMBZ5241B-E3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 11V 225MW SOT23-3
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Power - Max: 225 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SS3P3HM3/84A SS3P3HM3/84A Vishay General Semiconductor - Diodes Division ss3p3.pdf Description: DIODE SCHOTTKY 30V 3A DO220AA
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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SS3P3HM3/84A SS3P3HM3/84A Vishay General Semiconductor - Diodes Division ss3p3.pdf Description: DIODE SCHOTTKY 30V 3A DO220AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
auf Bestellung 11969 Stücke:
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SS3P5HM3/84A SS3P5HM3/84A Vishay General Semiconductor - Diodes Division ss3p5.pdf Description: DIODE SCHOTTKY 50V 3A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
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SS3P5HM3/84A SS3P5HM3/84A Vishay General Semiconductor - Diodes Division ss3p5.pdf Description: DIODE SCHOTTKY 50V 3A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
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VS-25CTQ045SLHM3 VS-25CTQ045SLHM3 Vishay General Semiconductor - Diodes Division vs-25ctq045slhm3.pdf Description: DIODE ARR SCHOTT 45V 30A TO263AB
Current - Reverse Leakage @ Vr: 1.75 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S1AFM-M3/6A S1AFM-M3/6A Vishay General Semiconductor - Diodes Division s1afg.pdf Description: DIODE STANDARD 1000V 1A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.47 µs
Technology: Standard
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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S1AFM-M3/6A S1AFM-M3/6A Vishay General Semiconductor - Diodes Division s1afg.pdf Description: DIODE STANDARD 1000V 1A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.47 µs
Technology: Standard
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 8164 Stücke:
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BZM55B4V7-TR BZM55B4V7-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 4.7V 500MW MICROMELF
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 600 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
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BZM55B4V7-TR BZM55B4V7-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 4.7V 500MW MICROMELF
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 600 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
auf Bestellung 2180 Stücke:
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BZX384B16-HE3-08 BZX384B16-HE3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 16V 200MW SOD323
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Power - Max: 200 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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BZX384B16-HE3-08 BZX384B16-HE3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 16V 200MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
auf Bestellung 43417 Stücke:
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EGF1B-1HE3_A/H egf1a.pdf
EGF1B-1HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EGF1B-1HE3/5CA egf1a.pdf
EGF1B-1HE3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar
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EGF1B-1HE3/67A egf1a.pdf
EGF1B-1HE3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CS2M-E3/H cs2dgjkm.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 2A DO214AA
Produkt ist nicht verfügbar
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SL12-E3/5AT sl12.pdf
SL12-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 16006 Stücke:
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Anzahl Preis
23+0.79 EUR
32+0.56 EUR
100+0.28 EUR
500+0.25 EUR
1000+0.2 EUR
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BU2010L-7001M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE BRIDGE 20A 1000V
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BU2010L-7001E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE BRIDGE 20A 1000V
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SM5S28ATHE3/I sm5s10atthrusm5s36at.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO218AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3600W (3.6kW)
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Unidirectional Channels: 1
Supplier Device Package: DO-218AC
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 79A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TZMC18-GS18 tzm.pdf
TZMC18-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZMC18-GS18 tzm.pdf
TZMC18-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
auf Bestellung 6905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
53+0.33 EUR
100+0.18 EUR
500+0.12 EUR
1000+0.079 EUR
2000+0.071 EUR
5000+0.062 EUR
Mindestbestellmenge: 44
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SMCJ20AHE3_A/H smcj.pdf
SMCJ20AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ20AHE3_A/I smcj.pdf
SMCJ20AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39AHM3_A/I p6smb.pdf
P6SMB39AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39AHM3/H p6smb.pdf
P6SMB39AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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P6SMB39AHM3/I p6smb.pdf
P6SMB39AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V12P12HM3_A/H v12p12.pdf
V12P12HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.88 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
V12P12HM3_A/H v12p12.pdf
V12P12HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 2313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+1.89 EUR
100+1.27 EUR
500+1.01 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B47P-M3-08 bzd27b-mseries.pdf
BZD27B47P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B47P-M3-08 bzd27b-mseries.pdf
BZD27B47P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
auf Bestellung 1326 Stücke:
Lieferzeit 10-14 Tag (e)
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BZD27C36P-E3-08 bzd27series.pdf
BZD27C36P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C36P-E3-08 bzd27series.pdf
BZD27C36P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
auf Bestellung 4743 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
27+0.66 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 17
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BZD27B36P-E3-08 bzd27bseries.pdf
BZD27B36P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B36P-E3-18 bzd27bseries.pdf
BZD27B36P-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B36P-M3-18 bzd27b-mseries.pdf
BZD27B36P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B47P-E3-08 bzd27bseries.pdf
BZD27B47P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B47P-E3-18 bzd27bseries.pdf
BZD27B47P-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B47P-M3-18 bzd27b-mseries.pdf
BZD27B47P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B36P-HE3-08 bzd27bseries.pdf
BZD27B36P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B36P-HE3-18 bzd27bseries.pdf
BZD27B36P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZD27B47P-HE3-08 bzd27bseries.pdf
BZD27B47P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Produkt ist nicht verfügbar
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BZD27B47P-HE3-18 bzd27bseries.pdf
BZD27B47P-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GP10-4004-E3/73 gp10-400x.pdf
GP10-4004-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PLZ2V2B-G3/H plzseries.pdf
PLZ2V2B-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.32V 960MW DO219AC
Current - Reverse Leakage @ Vr: 120 µA @ 700 mV
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 120 Ohms
Voltage - Zener (Nom) (Vz): 2.32 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±4.1%
Packaging: Tape & Reel (TR)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.076 EUR
Mindestbestellmenge: 4500
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PLZ2V2B-G3/H plzseries.pdf
PLZ2V2B-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.32V 960MW DO219AC
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±4.1%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 120 µA @ 700 mV
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 120 Ohms
Voltage - Zener (Nom) (Vz): 2.32 V
Operating Temperature: 150°C (TJ)
auf Bestellung 13865 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
57+0.31 EUR
117+0.15 EUR
500+0.13 EUR
1000+0.088 EUR
2000+0.076 EUR
Mindestbestellmenge: 39
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BAT54A-E3-18 bat54_bat54a_bat54c_bat54s.pdf
BAT54A-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 31015 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
39+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
2000+0.17 EUR
5000+0.15 EUR
Mindestbestellmenge: 24
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BAT54A-HE3-18
BAT54A-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT54A-HE3-18
BAT54A-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
auf Bestellung 6525 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
48+0.37 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.1 EUR
2000+0.09 EUR
5000+0.084 EUR
Mindestbestellmenge: 34
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BZX584C5V1-HG3-08 bzx584c-series.pdf
BZX584C5V1-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX584C5V1-HG3-08 bzx584c-series.pdf
BZX584C5V1-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8135 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
54+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
2000+0.12 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
BZX584C9V1-HG3-08 bzx584c-series.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER AUTO 300MW SOD523
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BZX584C9V1-HG3-08 bzx584c-series.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER AUTO 300MW SOD523
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BZX584C9V1-G3-08 bzx584c-series.pdf
BZX584C9V1-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 200MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.089 EUR
Mindestbestellmenge: 8000
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BZX584C9V1-G3-08 bzx584c-series.pdf
BZX584C9V1-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 200MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
auf Bestellung 8643 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
59+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
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BZX584C5V1-G3-08 bzx584c-series.pdf
BZX584C5V1-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 200MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.089 EUR
Mindestbestellmenge: 8000
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BZX584C5V1-G3-08 bzx584c-series.pdf
BZX584C5V1-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 200MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 13015 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
59+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 36
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SMCJ48CAHE3_A/H smcj.pdf
SMCJ48CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 48VWM 77.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FEPB16DT-E3/45 fep16jt.pdf
FEPB16DT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO263AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Produkt ist nicht verfügbar
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MMBZ5241B-E3-08
MMBZ5241B-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 225MW SOT23-3
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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MMBZ5241B-E3-08
MMBZ5241B-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 225MW SOT23-3
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Power - Max: 225 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SS3P3HM3/84A ss3p3.pdf
SS3P3HM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 3A DO220AA
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
6000+0.15 EUR
Mindestbestellmenge: 3000
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SS3P3HM3/84A ss3p3.pdf
SS3P3HM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 3A DO220AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
auf Bestellung 11969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
43+0.41 EUR
100+0.28 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 32
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SS3P5HM3/84A ss3p5.pdf
SS3P5HM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
Mindestbestellmenge: 3000
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SS3P5HM3/84A ss3p5.pdf
SS3P5HM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 15003 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
31+0.59 EUR
100+0.36 EUR
500+0.25 EUR
1000+0.19 EUR
Mindestbestellmenge: 23
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VS-25CTQ045SLHM3 vs-25ctq045slhm3.pdf
VS-25CTQ045SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 30A TO263AB
Current - Reverse Leakage @ Vr: 1.75 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S1AFM-M3/6A s1afg.pdf
S1AFM-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.47 µs
Technology: Standard
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.14 EUR
Mindestbestellmenge: 3500
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S1AFM-M3/6A s1afg.pdf
S1AFM-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.47 µs
Technology: Standard
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 8164 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
55+0.32 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 36
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BZM55B4V7-TR bzm55.pdf
BZM55B4V7-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW MICROMELF
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 600 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZM55B4V7-TR bzm55.pdf
BZM55B4V7-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW MICROMELF
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 600 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
auf Bestellung 2180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
96+0.18 EUR
204+0.087 EUR
500+0.086 EUR
1000+0.085 EUR
Mindestbestellmenge: 63
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BZX384B16-HE3-08 bzx384.pdf
BZX384B16-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 200MW SOD323
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Power - Max: 200 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.099 EUR
6000+0.086 EUR
15000+0.073 EUR
30000+0.069 EUR
Mindestbestellmenge: 3000
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BZX384B16-HE3-08 bzx384.pdf
BZX384B16-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 200MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
auf Bestellung 43417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
40+0.45 EUR
100+0.24 EUR
500+0.16 EUR
1000+0.11 EUR
Mindestbestellmenge: 33
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