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B240A-M3/61T B240A-M3/61T Vishay General Semiconductor - Diodes Division b230la-m3.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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B240A-M3/61T B240A-M3/61T Vishay General Semiconductor - Diodes Division b230la-m3.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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BZX84B5V6-G3-08 BZX84B5V6-G3-08 Vishay General Semiconductor - Diodes Division bzx84-g_series.pdf Description: DIODE ZENER 5.6V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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BZX84B5V6-G3-08 BZX84B5V6-G3-08 Vishay General Semiconductor - Diodes Division bzx84-g_series.pdf Description: DIODE ZENER 5.6V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
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VS-HFA220FA120 VS-HFA220FA120 Vishay General Semiconductor - Diodes Division vs-hfa220fa120.pdf Description: DIODE MOD GP 1200V 110A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 110A (DC)
Supplier Device Package: SOT-227
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
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BZG03C75-HM3-08 BZG03C75-HM3-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 75V 1.25W DO214AC
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
Qualification: AEC-Q101
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BZG03C75-HM3-08 BZG03C75-HM3-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 75V 1.25W DO214AC
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
Qualification: AEC-Q101
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BZG03C27-M3-18 BZG03C27-M3-18 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 27V 1.25W DO214AC
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
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BZG03C27-M3-18 BZG03C27-M3-18 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 27V 1.25W DO214AC
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
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BZG03C200-M3-18 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 200V 1.25W DO214AC
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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BZG03C200-M3-18 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 200V 1.25W DO214AC
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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VS-40EPS08-M3 VS-40EPS08-M3 Vishay General Semiconductor - Diodes Division vs-40eps-m3series.pdf Description: DIODE STANDARD 800V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
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MBR30H60CT-E3/45 MBR30H60CT-E3/45 Vishay General Semiconductor - Diodes Division mbr30h100ct.pdf Description: DIODE ARR SCHOTT 60V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 15 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
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VS-ST380CH06C1 VS-ST380CH06C1 Vishay General Semiconductor - Diodes Division vs-st380chseries.pdf Description: SCR 600V 2220A TO200AB
Packaging: Bulk
Package / Case: TO-200AB, E-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A, 11000A
Current - On State (It (AV)) (Max): 960 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: TO-200AB (E-Puk)
Part Status: Active
Current - On State (It (RMS)) (Max): 2220 A
Voltage - Off State: 600 V
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VS-80EBU04 VS-80EBU04 Vishay General Semiconductor - Diodes Division 80EBU04.pdf Description: DIODE STANDARD 400V 80A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PowIRtab™
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
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SMCJ85CA-E3/9AT SMCJ85CA-E3/9AT Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 85VWM 137VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMCJ85CA-E3/9AT SMCJ85CA-E3/9AT Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 85VWM 137VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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SM15T22AHM3_A/I SM15T22AHM3_A/I Vishay General Semiconductor - Diodes Division sm15t.pdf Description: TVS DIODE 18.8VWM 30.6VC DO214AB
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SM15T22AHM3_A/H SM15T22AHM3_A/H Vishay General Semiconductor - Diodes Division sm15t.pdf Description: TVS DIODE 18.8VWM 30.6VC DO214AB
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SM15T22AHE3_A/H Vishay General Semiconductor - Diodes Division sm15t.pdf Description: TVS DIODE 18.8VWM 30.6VC DO214AB
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SM15T22AHE3_A/I Vishay General Semiconductor - Diodes Division sm15t.pdf Description: TVS DIODE 18.8VWM 30.6VC DO214AB
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SM15T22AHM3/H SM15T22AHM3/H Vishay General Semiconductor - Diodes Division sm15t.pdf Description: TVS DIODE 18.8VWM 30.6VC DO214AB
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SM15T22AHM3/I SM15T22AHM3/I Vishay General Semiconductor - Diodes Division sm15t.pdf Description: TVS DIODE 18.8VWM 30.6VC DO214AB
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MBR10H100CT-E3/45 MBR10H100CT-E3/45 Vishay General Semiconductor - Diodes Division mbr10hxxct.pdf Description: DIODE ARR SCHOTT 100V 5A TO2203
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 5A
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1N5626GP-E3/73 Vishay General Semiconductor - Diodes Division 1N5624GP-E_thru_5627GP-E3.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MURS120-M3/52T MURS120-M3/52T Vishay General Semiconductor - Diodes Division murs120.pdf Description: DIODE STANDARD 200V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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750+0.5 EUR
1500+0.45 EUR
2250+0.43 EUR
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MURS120-M3/52T MURS120-M3/52T Vishay General Semiconductor - Diodes Division murs120.pdf Description: DIODE STANDARD 200V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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VS-VSKD236/16PBF VS-VSKD236/16PBF Vishay General Semiconductor - Diodes Division vs-vskd166.pdf Description: DIODE MOD GP 1600V 115A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 115A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
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VS-VSKE236/16PBF VS-VSKE236/16PBF Vishay General Semiconductor - Diodes Division vs-vskd166.pdf Description: DIODE STD 1600V 230A INTAPAK
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 230A
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
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1N6284A-E3/73 1N6284A-E3/73 Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 30.8VWM 49.9VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.1A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6284A-E3/73 1N6284A-E3/73 Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 30.8VWM 49.9VC 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.1A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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V3P6L-M3/H V3P6L-M3/H Vishay General Semiconductor - Diodes Division v3p6l.pdf Description: DIODE SCHOTTKY 60V 2.3A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
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V3P6L-M3/H V3P6L-M3/H Vishay General Semiconductor - Diodes Division v3p6l.pdf Description: DIODE SCHOTTKY 60V 2.3A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
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V3P6LHM3/H V3P6LHM3/H Vishay General Semiconductor - Diodes Division v3p6l.pdf Description: SCHOTTKY RECTIFIER 3A 60V SMP
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V3P6LHM3/H V3P6LHM3/H Vishay General Semiconductor - Diodes Division v3p6l.pdf Description: SCHOTTKY RECTIFIER 3A 60V SMP
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CS1J-E3/I CS1J-E3/I Vishay General Semiconductor - Diodes Division cs1dgjkm.pdf Description: DIODE GPP 600V 1.0A DO-214AC
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CS1J-E3/I CS1J-E3/I Vishay General Semiconductor - Diodes Division cs1dgjkm.pdf Description: DIODE GPP 600V 1.0A DO-214AC
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CS1J-E3/H Vishay General Semiconductor - Diodes Division cs1dgjkm.pdf Description: DIODE GEN PURP 600V 1A DO214AC
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1N4752A-TR 1N4752A-TR Vishay General Semiconductor - Diodes Division 1n4728a.pdf Description: DIODE ZENER 33V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
Qualification: AEC-Q101
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1N4752A-TR 1N4752A-TR Vishay General Semiconductor - Diodes Division 1n4728a.pdf Description: DIODE ZENER 33V 1.3W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
Qualification: AEC-Q101
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1N4754A-TR 1N4754A-TR Vishay General Semiconductor - Diodes Division 1n4728a.pdf Description: DIODE ZENER 39V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 29.7 V
Qualification: AEC-Q101
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1N4754A-TR 1N4754A-TR Vishay General Semiconductor - Diodes Division 1n4728a.pdf Description: DIODE ZENER 39V 1.3W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 29.7 V
Qualification: AEC-Q101
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SMCJ33AHM3_A/H SMCJ33AHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 28.1A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMCJ33AHM3_A/H SMCJ33AHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 28.1A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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VS-ETH3106FP-N3 VS-ETH3106FP-N3 Vishay General Semiconductor - Diodes Division vs-eth3106fp-n3.pdf Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SMBJ26AHE3_A/H SMBJ26AHE3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 26VWM 42.1VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 42.1V
Voltage - Breakdown (Min): 28.9V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 26V
Current - Peak Pulse (10/1000µs): 14.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMBJ26AHE3_A/H SMBJ26AHE3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 26VWM 42.1VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 42.1V
Voltage - Breakdown (Min): 28.9V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 26V
Current - Peak Pulse (10/1000µs): 14.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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P6SMB480A01HM3_A/I P6SMB480A01HM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 408VWM 658VC DO214AA
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P6SMB480AHM3_A/H P6SMB480AHM3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 408VWM 658VC DO214AA
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P6SMB480AHM3_A/I P6SMB480AHM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 408VWM 658VC DO214AA
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P6SMB480A01HM3_C/I P6SMB480A01HM3_C/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 408VWM 658VC DO214AA
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VS-10ETF04-M3 VS-10ETF04-M3 Vishay General Semiconductor - Diodes Division vs-10etf0m3.pdf Description: DIODE GEN PURP 400V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -45°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
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VS-10ETF10FP-M3 VS-10ETF10FP-M3 Vishay General Semiconductor - Diodes Division vs-10etf10_12fp-m3.pdf Description: DIODE STANDARD 1000V 10A TO2202
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
auf Bestellung 437 Stücke:
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VS-10ETF12THM3 VS-10ETF12THM3 Vishay General Semiconductor - Diodes Division vs-10etf12thm3.pdf Description: DIODE GEN PURP 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
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VS-10ETF12-M3 VS-10ETF12-M3 Vishay General Semiconductor - Diodes Division vs-10etf1m3.pdf Description: DIODE STANDARD 1200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-10ETF04SPBF VS-10ETF04SPBF Vishay General Semiconductor - Diodes Division VS-10ETF..SPbF.pdf Description: DIODE GEN PURP 400V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
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PLZ6V8C-G3/H PLZ6V8C-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 6.84V 960MW DO219AC
Tolerance: ±2.56%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.84 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
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PLZ6V8C-G3/H PLZ6V8C-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 6.84V 960MW DO219AC
Tolerance: ±2.56%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.84 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
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TLZ6V8C-GS08 TLZ6V8C-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 6.8V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
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TLZ6V8C-GS08 TLZ6V8C-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 6.8V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
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B240A-M3/61T b230la-m3.pdf
B240A-M3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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AnzahlPrivatkunde
1800+0.21 EUR
3600+0.2 EUR
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B240A-M3/61T b230la-m3.pdf
B240A-M3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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23+0.94 EUR
33+0.64 EUR
100+0.44 EUR
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BZX84B5V6-G3-08 bzx84-g_series.pdf
BZX84B5V6-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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3000+0.088 EUR
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BZX84B5V6-G3-08 bzx84-g_series.pdf
BZX84B5V6-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
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72+0.3 EUR
105+0.2 EUR
219+0.096 EUR
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VS-HFA220FA120 vs-hfa220fa120.pdf
VS-HFA220FA120
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 1200V 110A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 110A (DC)
Supplier Device Package: SOT-227
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
auf Bestellung 1481 Stücke:
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1+102.48 EUR
10+78.6 EUR
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BZG03C75-HM3-08 bzg03c-m-series.pdf
BZG03C75-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 1.25W DO214AC
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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1500+0.39 EUR
3000+0.36 EUR
4500+0.35 EUR
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BZG03C75-HM3-08 bzg03c-m-series.pdf
BZG03C75-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 1.25W DO214AC
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
Qualification: AEC-Q101
auf Bestellung 6947 Stücke:
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40+0.52 EUR
53+0.39 EUR
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BZG03C27-M3-18 bzg03c-m-series.pdf
BZG03C27-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 1.25W DO214AC
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Produkt ist nicht verfügbar
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BZG03C27-M3-18 bzg03c-m-series.pdf
BZG03C27-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 1.25W DO214AC
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
auf Bestellung 5037 Stücke:
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BZG03C200-M3-18 bzg03c-m-series.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 1.25W DO214AC
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
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BZG03C200-M3-18 bzg03c-m-series.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 1.25W DO214AC
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 3779 Stücke:
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9+2.4 EUR
14+1.51 EUR
100+1 EUR
500+0.77 EUR
1000+0.7 EUR
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VS-40EPS08-M3 vs-40eps-m3series.pdf
VS-40EPS08-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
auf Bestellung 265 Stücke:
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3+9.72 EUR
25+5 EUR
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MBR30H60CT-E3/45 mbr30h100ct.pdf
MBR30H60CT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 15 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
auf Bestellung 350 Stücke:
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11+1.9 EUR
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VS-ST380CH06C1 vs-st380chseries.pdf
VS-ST380CH06C1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 600V 2220A TO200AB
Packaging: Bulk
Package / Case: TO-200AB, E-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A, 11000A
Current - On State (It (AV)) (Max): 960 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: TO-200AB (E-Puk)
Part Status: Active
Current - On State (It (RMS)) (Max): 2220 A
Voltage - Off State: 600 V
auf Bestellung 13 Stücke:
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1+216.77 EUR
12+200.66 EUR
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VS-80EBU04 80EBU04.pdf
VS-80EBU04
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 80A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PowIRtab™
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
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SMCJ85CA-E3/9AT smcj.pdf
SMCJ85CA-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 85VWM 137VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMCJ85CA-E3/9AT smcj.pdf
SMCJ85CA-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 85VWM 137VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 2360 Stücke:
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11+1.99 EUR
17+1.24 EUR
100+0.81 EUR
500+0.63 EUR
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SM15T22AHM3_A/I sm15t.pdf
SM15T22AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Produkt ist nicht verfügbar
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SM15T22AHM3_A/H sm15t.pdf
SM15T22AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Produkt ist nicht verfügbar
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SM15T22AHE3_A/H sm15t.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Produkt ist nicht verfügbar
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SM15T22AHE3_A/I sm15t.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Produkt ist nicht verfügbar
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SM15T22AHM3/H sm15t.pdf
SM15T22AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Produkt ist nicht verfügbar
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SM15T22AHM3/I sm15t.pdf
SM15T22AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Produkt ist nicht verfügbar
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MBR10H100CT-E3/45 mbr10hxxct.pdf
MBR10H100CT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO2203
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 5A
auf Bestellung 971 Stücke:
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4+6.14 EUR
50+3.06 EUR
100+2.76 EUR
500+2.24 EUR
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1N5626GP-E3/73 1N5624GP-E_thru_5627GP-E3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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MURS120-M3/52T murs120.pdf
MURS120-M3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 9750 Stücke:
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750+0.5 EUR
1500+0.45 EUR
2250+0.43 EUR
3750+0.4 EUR
5250+0.38 EUR
7500+0.37 EUR
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MURS120-M3/52T murs120.pdf
MURS120-M3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 9782 Stücke:
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13+1.7 EUR
20+1.07 EUR
100+0.69 EUR
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VS-VSKD236/16PBF vs-vskd166.pdf
VS-VSKD236/16PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 1600V 115A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 115A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
auf Bestellung 18 Stücke:
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AnzahlPrivatkunde
1+123.19 EUR
15+111.65 EUR
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VS-VSKE236/16PBF vs-vskd166.pdf
VS-VSKE236/16PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 1600V 230A INTAPAK
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 230A
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
auf Bestellung 32 Stücke:
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AnzahlPrivatkunde
1+103.42 EUR
15+76.11 EUR
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1N6284A-E3/73 15ke.pdf
1N6284A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.1A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 245 Stücke:
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13+1.65 EUR
18+1.21 EUR
100+0.84 EUR
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1N6284A-E3/73 15ke.pdf
1N6284A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.1A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1000+0.7 EUR
2000+0.62 EUR
3000+0.61 EUR
7000+0.6 EUR
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V3P6L-M3/H v3p6l.pdf
V3P6L-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.3A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Produkt ist nicht verfügbar
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V3P6L-M3/H v3p6l.pdf
V3P6L-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.3A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
auf Bestellung 8933 Stücke:
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30+0.71 EUR
39+0.55 EUR
100+0.33 EUR
500+0.31 EUR
1000+0.2 EUR
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V3P6LHM3/H v3p6l.pdf
V3P6LHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCHOTTKY RECTIFIER 3A 60V SMP
Produkt ist nicht verfügbar
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V3P6LHM3/H v3p6l.pdf
V3P6LHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCHOTTKY RECTIFIER 3A 60V SMP
Produkt ist nicht verfügbar
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CS1J-E3/I cs1dgjkm.pdf
CS1J-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GPP 600V 1.0A DO-214AC
Produkt ist nicht verfügbar
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CS1J-E3/I cs1dgjkm.pdf
CS1J-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GPP 600V 1.0A DO-214AC
Produkt ist nicht verfügbar
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CS1J-E3/H cs1dgjkm.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AC
Produkt ist nicht verfügbar
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1N4752A-TR 1n4728a.pdf
1N4752A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
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5000+0.31 EUR
10000+0.29 EUR
15000+0.27 EUR
25000+0.26 EUR
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1N4752A-TR 1n4728a.pdf
1N4752A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 1.3W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
Qualification: AEC-Q101
auf Bestellung 36131 Stücke:
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15+1.4 EUR
25+0.87 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.38 EUR
2000+0.35 EUR
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1N4754A-TR 1n4728a.pdf
1N4754A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 29.7 V
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
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5000+0.31 EUR
10000+0.29 EUR
15000+0.27 EUR
25000+0.26 EUR
35000+0.25 EUR
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1N4754A-TR 1n4728a.pdf
1N4754A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 1.3W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 29.7 V
Qualification: AEC-Q101
auf Bestellung 40146 Stücke:
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15+1.43 EUR
24+0.88 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.38 EUR
2000+0.35 EUR
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SMCJ33AHM3_A/H smcj.pdf
SMCJ33AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 28.1A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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850+0.49 EUR
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SMCJ33AHM3_A/H smcj.pdf
SMCJ33AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 28.1A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2800 Stücke:
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13+1.71 EUR
18+1.2 EUR
100+0.8 EUR
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VS-ETH3106FP-N3 vs-eth3106fp-n3.pdf
VS-ETH3106FP-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 502 Stücke:
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8+2.7 EUR
50+1.17 EUR
100+1.14 EUR
500+1.01 EUR
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SMBJ26AHE3_A/H smbj.pdf
SMBJ26AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26VWM 42.1VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 42.1V
Voltage - Breakdown (Min): 28.9V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 26V
Current - Peak Pulse (10/1000µs): 14.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMBJ26AHE3_A/H smbj.pdf
SMBJ26AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26VWM 42.1VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 42.1V
Voltage - Breakdown (Min): 28.9V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 26V
Current - Peak Pulse (10/1000µs): 14.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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P6SMB480A01HM3_A/I p6smb.pdf
P6SMB480A01HM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 408VWM 658VC DO214AA
Produkt ist nicht verfügbar
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P6SMB480AHM3_A/H p6smb.pdf
P6SMB480AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 408VWM 658VC DO214AA
Produkt ist nicht verfügbar
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P6SMB480AHM3_A/I p6smb.pdf
P6SMB480AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 408VWM 658VC DO214AA
Produkt ist nicht verfügbar
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P6SMB480A01HM3_C/I p6smb.pdf
P6SMB480A01HM3_C/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 408VWM 658VC DO214AA
Produkt ist nicht verfügbar
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VS-10ETF04-M3 vs-10etf0m3.pdf
VS-10ETF04-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -45°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
auf Bestellung 8028 Stücke:
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5+4.24 EUR
50+2.28 EUR
100+2.08 EUR
500+2 EUR
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VS-10ETF10FP-M3 vs-10etf10_12fp-m3.pdf
VS-10ETF10FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 10A TO2202
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
auf Bestellung 437 Stücke:
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4+6.85 EUR
50+3.45 EUR
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VS-10ETF12THM3 vs-10etf12thm3.pdf
VS-10ETF12THM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 475 Stücke:
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6+4.11 EUR
50+2.07 EUR
100+1.71 EUR
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VS-10ETF12-M3 vs-10etf1m3.pdf
VS-10ETF12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 5061 Stücke:
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4+5.59 EUR
50+2.77 EUR
100+2.5 EUR
500+2.02 EUR
1000+1.87 EUR
2000+1.74 EUR
5000+1.59 EUR
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VS-10ETF04SPBF VS-10ETF..SPbF.pdf
VS-10ETF04SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
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PLZ6V8C-G3/H plzseries.pdf
PLZ6V8C-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.84V 960MW DO219AC
Tolerance: ±2.56%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.84 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
auf Bestellung 18000 Stücke:
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4500+0.074 EUR
9000+0.067 EUR
13500+0.063 EUR
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PLZ6V8C-G3/H plzseries.pdf
PLZ6V8C-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.84V 960MW DO219AC
Tolerance: ±2.56%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.84 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
auf Bestellung 22080 Stücke:
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67+0.31 EUR
97+0.21 EUR
228+0.092 EUR
500+0.086 EUR
1000+0.079 EUR
2000+0.076 EUR
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TLZ6V8C-GS08 tlz.pdf
TLZ6V8C-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.089 EUR
5000+0.08 EUR
7500+0.075 EUR
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TLZ6V8C-GS08 tlz.pdf
TLZ6V8C-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
auf Bestellung 12350 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
77+0.27 EUR
106+0.2 EUR
218+0.096 EUR
500+0.094 EUR
1000+0.093 EUR
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