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SMBJ33CAHE3_A/I SMBJ33CAHE3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMBJ33CAHE3_A/I SMBJ33CAHE3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMBJ33CAHE3_A/H SMBJ33CAHE3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ33CAHE3_A/H SMBJ33CAHE3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMBJ33CAHM3_A/H SMBJ33CAHM3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMBJ33CAHM3_A/H SMBJ33CAHM3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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P600K-E3/73 P600K-E3/73 Vishay General Semiconductor - Diodes Division p600a.pdf Description: DIODE STANDARD 800V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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P600K-E3/73 P600K-E3/73 Vishay General Semiconductor - Diodes Division p600a.pdf Description: DIODE STANDARD 800V 6A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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SB560A-E3/54 SB560A-E3/54 Vishay General Semiconductor - Diodes Division sb520a.pdf Description: DIODE SCHOTTKY 60V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SB560A-E3/54 SB560A-E3/54 Vishay General Semiconductor - Diodes Division sb520a.pdf Description: DIODE SCHOTTKY 60V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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UF5405-E3/54 UF5405-E3/54 Vishay General Semiconductor - Diodes Division uf5400.pdf Description: DIODE STANDARD 500V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 36pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
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UF5405-E3/54 UF5405-E3/54 Vishay General Semiconductor - Diodes Division uf5400.pdf Description: DIODE STANDARD 500V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 36pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
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VSSC8L45-M3/57T VSSC8L45-M3/57T Vishay General Semiconductor - Diodes Division vssc8l45-m3.pdf Description: DIODE SCHOTTKY 45V 3.8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1068pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 3.5 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 45 V
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VSSC8L45-M3/57T VSSC8L45-M3/57T Vishay General Semiconductor - Diodes Division vssc8l45-m3.pdf Description: DIODE SCHOTTKY 45V 3.8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1068pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 3.5 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 45 V
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1N4150W-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 50V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GSIB2060-E3/45 GSIB2060-E3/45 Vishay General Semiconductor - Diodes Division gsib20xx.pdf Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SMC5K13CA-M3/H SMC5K13CA-M3/H Vishay General Semiconductor - Diodes Division smc5k10cathrusmc5k85ca.pdf Description: TVS DIODE 13VWM 21.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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SMC5K13CA-M3/H SMC5K13CA-M3/H Vishay General Semiconductor - Diodes Division smc5k10cathrusmc5k85ca.pdf Description: TVS DIODE 13VWM 21.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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SE100PWBHM3/I Vishay General Semiconductor - Diodes Division se100pwbdgj.pdf Description: DIODE GEN PURP 100V 10A SLIMDPAK
Qualification: AEC-Q101
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Reverse Recovery Time (trr): 2.6 µs
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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MMBD7000-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBD7000-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C24-G3-18 BZX84C24-G3-18 Vishay General Semiconductor - Diodes Division bzx84-g_series.pdf Description: DIODE ZENER 24V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZX84C24-G3-18 BZX84C24-G3-18 Vishay General Semiconductor - Diodes Division bzx84-g_series.pdf Description: DIODE ZENER 24V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
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SMBJ100AHM3_A/I SMBJ100AHM3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMBJ100AHM3_A/H SMBJ100AHM3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMBJ100AHM3/I SMBJ100AHM3/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ15AHE3_A/H SMAJ15AHE3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 15VWM 24.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16.4A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMAJ15AHE3_A/H SMAJ15AHE3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 15VWM 24.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16.4A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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B350A-E3/61T B350A-E3/61T Vishay General Semiconductor - Diodes Division b360a.pdf Description: DIODE SCHOTTKY 50V 3A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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B350A-E3/61T B350A-E3/61T Vishay General Semiconductor - Diodes Division b360a.pdf Description: DIODE SCHOTTKY 50V 3A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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B350A-E3/5AT B350A-E3/5AT Vishay General Semiconductor - Diodes Division b360a.pdf Description: DIODE SCHOTTKY 50V 3A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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B350A-E3/5AT B350A-E3/5AT Vishay General Semiconductor - Diodes Division b360a.pdf Description: DIODE SCHOTTKY 50V 3A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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B350A-M3/61T B350A-M3/61T Vishay General Semiconductor - Diodes Division b350a-m3.pdf Description: DIODE SCHOTTKY 50V 3A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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B350A-M3/61T B350A-M3/61T Vishay General Semiconductor - Diodes Division b350a-m3.pdf Description: DIODE SCHOTTKY 50V 3A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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SS5P4-M3/87A SS5P4-M3/87A Vishay General Semiconductor - Diodes Division ss5p4.pdf Description: DIODE SCHOTTKY 40V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
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SS5P4-M3/87A SS5P4-M3/87A Vishay General Semiconductor - Diodes Division ss5p4.pdf Description: DIODE SCHOTTKY 40V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
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EGF1T-E3/5CA EGF1T-E3/5CA Vishay General Semiconductor - Diodes Division egf1t.pdf Description: DIODE STANDARD 1300V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
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EGF1T-E3/5CA EGF1T-E3/5CA Vishay General Semiconductor - Diodes Division egf1t.pdf Description: DIODE STANDARD 1300V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
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BZX384C18-HG3-08 BZX384C18-HG3-08 Vishay General Semiconductor - Diodes Division thenoiseofavalanchebreakdown.pdf Description: DIODE ZENER 18V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
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BZX384C18-HG3-18 BZX384C18-HG3-18 Vishay General Semiconductor - Diodes Division thenoiseofavalanchebreakdown.pdf Description: DIODE ZENER 18V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10K100C-M3/H V10K100C-M3/H Vishay General Semiconductor - Diodes Division v10k100c.pdf Description: DIODE ARR SCHOTTKY 100V FLATPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.9A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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V10K100C-M3/H V10K100C-M3/H Vishay General Semiconductor - Diodes Division v10k100c.pdf Description: DIODE ARR SCHOTTKY 100V FLATPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.9A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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V10PWM12HM3/I V10PWM12HM3/I Vishay General Semiconductor - Diodes Division v10pwm12.pdf Description: DIODE SCHOTTKY 120V 10A SLIMDPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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V10PWM12HM3/I V10PWM12HM3/I Vishay General Semiconductor - Diodes Division v10pwm12.pdf Description: DIODE SCHOTTKY 120V 10A SLIMDPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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V10KM60C-M3/H V10KM60C-M3/H Vishay General Semiconductor - Diodes Division v10km60c.pdf Description: DIODE ARR SCHOT 60V 4.8A FLATPAK
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 4.8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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V10KM60C-M3/H V10KM60C-M3/H Vishay General Semiconductor - Diodes Division v10km60c.pdf Description: DIODE ARR SCHOT 60V 4.8A FLATPAK
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 4.8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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V10DM153CHM3/I V10DM153CHM3/I Vishay General Semiconductor - Diodes Division v10dm153c.pdf Description: DUAL 150V, 10A TMBS (TRENCH MOS
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Tape & Reel (TR)
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V10DM153CHM3/I V10DM153CHM3/I Vishay General Semiconductor - Diodes Division v10dm153c.pdf Description: DUAL 150V, 10A TMBS (TRENCH MOS
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Cut Tape (CT)
Part Status: Active
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100+1.52 EUR
500+1.25 EUR
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V10KM120C-M3/H V10KM120C-M3/H Vishay General Semiconductor - Diodes Division v10km120c.pdf Description: DIODE ARR SCHOTTKY 120V FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.9A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Grade: Automotive
Qualification: AEC-Q101
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V10KM120C-M3/H V10KM120C-M3/H Vishay General Semiconductor - Diodes Division v10km120c.pdf Description: DIODE ARR SCHOTTKY 120V FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.9A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Grade: Automotive
Qualification: AEC-Q101
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V10P22HM3/H V10P22HM3/H Vishay General Semiconductor - Diodes Division v10p22.pdf Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.84 EUR
3000+0.8 EUR
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V10P22HM3/H V10P22HM3/H Vishay General Semiconductor - Diodes Division v10p22.pdf Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 3750 Stücke:
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500+1.04 EUR
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V10P22-M3/H V10P22-M3/H Vishay General Semiconductor - Diodes Division v10p22.pdf Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
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V10P22-M3/H V10P22-M3/H Vishay General Semiconductor - Diodes Division v10p22.pdf Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 2725 Stücke:
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V10PM63HM3/H V10PM63HM3/H Vishay General Semiconductor - Diodes Division v10pm63.pdf Description: DIODE SCHOTTKY 60V 4.5A TO277A
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2190pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.39 EUR
3000+0.38 EUR
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V10PM63HM3/H V10PM63HM3/H Vishay General Semiconductor - Diodes Division v10pm63.pdf Description: DIODE SCHOTTKY 60V 4.5A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2190pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 4500 Stücke:
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21+1.04 EUR
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500+0.6 EUR
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V10PM63-M3/H V10PM63-M3/H Vishay General Semiconductor - Diodes Division v10pm63.pdf Description: DIODE SCHOTTKY 60V 4.5A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2060pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.51 EUR
3000+0.46 EUR
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V10PM63-M3/H V10PM63-M3/H Vishay General Semiconductor - Diodes Division v10pm63.pdf Description: DIODE SCHOTTKY 60V 4.5A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2060pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 3089 Stücke:
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12+1.88 EUR
18+1.18 EUR
100+0.77 EUR
500+0.6 EUR
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V10PWM10-M3/I V10PWM10-M3/I Vishay General Semiconductor - Diodes Division v10pwm10.pdf Description: DIODE SCHOTTKY 100V 10A SLIMDPAK
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4500 Stücke
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V10PWM10-M3/I V10PWM10-M3/I Vishay General Semiconductor - Diodes Division v10pwm10.pdf Description: DIODE SCHOTTKY 100V 10A SLIMDPAK
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1389 Stücke:
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15+1.46 EUR
21+1.04 EUR
100+0.82 EUR
500+0.63 EUR
1000+0.55 EUR
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SMBJ33CAHE3_A/I smbj.pdf
SMBJ33CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ33CAHE3_A/I smbj.pdf
SMBJ33CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1447 Stücke:
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AnzahlPrivatkunde
11+1.93 EUR
18+1.2 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
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SMBJ33CAHE3_A/H smbj.pdf
SMBJ33CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ33CAHE3_A/H smbj.pdf
SMBJ33CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 303 Stücke:
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AnzahlPrivatkunde
12+1.76 EUR
20+1.08 EUR
100+0.7 EUR
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SMBJ33CAHM3_A/H smbj.pdf
SMBJ33CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
750+0.57 EUR
1500+0.51 EUR
2250+0.49 EUR
3750+0.46 EUR
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SMBJ33CAHM3_A/H smbj.pdf
SMBJ33CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10399 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.93 EUR
18+1.2 EUR
100+0.79 EUR
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P600K-E3/73 p600a.pdf
P600K-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 487 Stücke:
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5+5.07 EUR
10+3.27 EUR
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P600K-E3/73 p600a.pdf
P600K-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 6A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 3300 Stücke:
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300+1.92 EUR
600+1.76 EUR
900+1.68 EUR
1500+1.58 EUR
2100+1.52 EUR
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SB560A-E3/54 sb520a.pdf
SB560A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
auf Bestellung 2800 Stücke:
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1400+0.69 EUR
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SB560A-E3/54 sb520a.pdf
SB560A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
auf Bestellung 3261 Stücke:
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9+2.45 EUR
14+1.55 EUR
50+1.14 EUR
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UF5405-E3/54 uf5400.pdf
UF5405-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 500V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 36pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
auf Bestellung 2800 Stücke:
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1400+0.64 EUR
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UF5405-E3/54 uf5400.pdf
UF5405-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 500V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 36pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
auf Bestellung 4932 Stücke:
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9+2.34 EUR
15+1.46 EUR
50+1.08 EUR
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VSSC8L45-M3/57T vssc8l45-m3.pdf
VSSC8L45-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 3.8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1068pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 3.5 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 45 V
auf Bestellung 1700 Stücke:
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AnzahlPrivatkunde
850+0.3 EUR
1700+0.29 EUR
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VSSC8L45-M3/57T vssc8l45-m3.pdf
VSSC8L45-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 3.8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1068pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 3.5 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 45 V
auf Bestellung 2645 Stücke:
Lieferzeit 10-14 Tag (e)
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18+1.19 EUR
24+0.88 EUR
100+0.62 EUR
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1N4150W-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GSIB2060-E3/45 gsib20xx.pdf
GSIB2060-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 798 Stücke:
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SMC5K13CA-M3/H smc5k10cathrusmc5k85ca.pdf
SMC5K13CA-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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850+1.5 EUR
1700+1.23 EUR
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SMC5K13CA-M3/H smc5k10cathrusmc5k85ca.pdf
SMC5K13CA-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 1722 Stücke:
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9+2.51 EUR
10+2.26 EUR
100+1.76 EUR
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SE100PWBHM3/I se100pwbdgj.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 10A SLIMDPAK
Qualification: AEC-Q101
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Reverse Recovery Time (trr): 2.6 µs
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMBD7000-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBD7000-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C24-G3-18 bzx84-g_series.pdf
BZX84C24-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZX84C24-G3-18 bzx84-g_series.pdf
BZX84C24-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 958 Stücke:
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72+0.3 EUR
102+0.2 EUR
209+0.1 EUR
500+0.096 EUR
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SMBJ100AHM3_A/I smbj.pdf
SMBJ100AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ100AHM3_A/H smbj.pdf
SMBJ100AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ100AHM3/I smbj.pdf
SMBJ100AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ15AHE3_A/H smaj50a.pdf
SMAJ15AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16.4A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5400 Stücke:
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1800+0.3 EUR
5400+0.25 EUR
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SMAJ15AHE3_A/H smaj50a.pdf
SMAJ15AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16.4A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6220 Stücke:
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18+1.19 EUR
29+0.74 EUR
50+0.54 EUR
100+0.48 EUR
500+0.36 EUR
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B350A-E3/61T b360a.pdf
B350A-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 5400 Stücke:
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1800+0.17 EUR
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B350A-E3/61T b360a.pdf
B350A-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 7284 Stücke:
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27+0.8 EUR
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100+0.31 EUR
500+0.29 EUR
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B350A-E3/5AT b360a.pdf
B350A-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
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7500+0.17 EUR
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B350A-E3/5AT b360a.pdf
B350A-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 7514 Stücke:
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29+0.74 EUR
44+0.49 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
2000+0.24 EUR
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B350A-M3/61T b350a-m3.pdf
B350A-M3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 7200 Stücke:
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AnzahlPrivatkunde
1800+0.17 EUR
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B350A-M3/61T b350a-m3.pdf
B350A-M3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 8688 Stücke:
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29+0.74 EUR
43+0.5 EUR
100+0.39 EUR
500+0.3 EUR
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SS5P4-M3/87A ss5p4.pdf
SS5P4-M3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
Produkt ist nicht verfügbar
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SS5P4-M3/87A ss5p4.pdf
SS5P4-M3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
auf Bestellung 6473 Stücke:
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12+1.78 EUR
19+1.11 EUR
100+0.71 EUR
500+0.55 EUR
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EGF1T-E3/5CA egf1t.pdf
EGF1T-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1300V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
auf Bestellung 6500 Stücke:
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AnzahlPrivatkunde
6500+0.37 EUR
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EGF1T-E3/5CA egf1t.pdf
EGF1T-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1300V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
auf Bestellung 12794 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.43 EUR
23+0.94 EUR
100+0.73 EUR
500+0.57 EUR
1000+0.49 EUR
2000+0.46 EUR
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BZX384C18-HG3-08 thenoiseofavalanchebreakdown.pdf
BZX384C18-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BZX384C18-HG3-18 thenoiseofavalanchebreakdown.pdf
BZX384C18-HG3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V10K100C-M3/H v10k100c.pdf
V10K100C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 100V FLATPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.9A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
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AnzahlPrivatkunde
1500+0.49 EUR
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V10K100C-M3/H v10k100c.pdf
V10K100C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 100V FLATPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.9A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2351 Stücke:
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12+1.87 EUR
18+1.23 EUR
100+0.87 EUR
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V10PWM12HM3/I v10pwm12.pdf
V10PWM12HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 10A SLIMDPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V10PWM12HM3/I v10pwm12.pdf
V10PWM12HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 10A SLIMDPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 4490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.71 EUR
18+1.19 EUR
100+0.94 EUR
500+0.73 EUR
1000+0.64 EUR
2000+0.61 EUR
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V10KM60C-M3/H v10km60c.pdf
V10KM60C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 4.8A FLATPAK
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 4.8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.63 EUR
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V10KM60C-M3/H v10km60c.pdf
V10KM60C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 4.8A FLATPAK
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 4.8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2955 Stücke:
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AnzahlPrivatkunde
10+2.31 EUR
15+1.45 EUR
100+0.95 EUR
500+0.74 EUR
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V10DM153CHM3/I v10dm153c.pdf
V10DM153CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DUAL 150V, 10A TMBS (TRENCH MOS
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
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AnzahlPrivatkunde
2000+1.02 EUR
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V10DM153CHM3/I v10dm153c.pdf
V10DM153CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DUAL 150V, 10A TMBS (TRENCH MOS
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 2000 Stücke:
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AnzahlPrivatkunde
10+2.18 EUR
11+1.95 EUR
100+1.52 EUR
500+1.25 EUR
1000+1.02 EUR
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V10KM120C-M3/H v10km120c.pdf
V10KM120C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 120V FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.9A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.75 EUR
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V10KM120C-M3/H v10km120c.pdf
V10KM120C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 120V FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.9A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.67 EUR
13+1.69 EUR
100+1.12 EUR
500+0.87 EUR
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V10P22HM3/H v10p22.pdf
V10P22HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.84 EUR
3000+0.8 EUR
Mindestbestellmenge: 1500 Stücke
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V10P22HM3/H v10p22.pdf
V10P22HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 3750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.9 EUR
14+1.57 EUR
100+1.21 EUR
500+1.04 EUR
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V10P22-M3/H v10p22.pdf
V10P22-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.69 EUR
Mindestbestellmenge: 1500 Stücke
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V10P22-M3/H v10p22.pdf
V10P22-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 2725 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.48 EUR
14+1.55 EUR
100+1.02 EUR
500+0.8 EUR
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V10PM63HM3/H v10pm63.pdf
V10PM63HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.5A TO277A
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2190pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.39 EUR
3000+0.38 EUR
Mindestbestellmenge: 1500 Stücke
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V10PM63HM3/H v10pm63.pdf
V10PM63HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.5A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2190pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.59 EUR
21+1.04 EUR
100+0.77 EUR
500+0.6 EUR
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V10PM63-M3/H v10pm63.pdf
V10PM63-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.5A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2060pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.51 EUR
3000+0.46 EUR
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V10PM63-M3/H v10pm63.pdf
V10PM63-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.5A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2060pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 3089 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.88 EUR
18+1.18 EUR
100+0.77 EUR
500+0.6 EUR
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V10PWM10-M3/I v10pwm10.pdf
V10PWM10-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A SLIMDPAK
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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V10PWM10-M3/I v10pwm10.pdf
V10PWM10-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A SLIMDPAK
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1389 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.46 EUR
21+1.04 EUR
100+0.82 EUR
500+0.63 EUR
1000+0.55 EUR
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