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CRCW2512330RJNEG CRCW2512330RJNEG VISHAY CRCW.pdf Category: SMD resistors
Description: Resistor: thick film; 330Ω; SMD; 2512; 1W; ±5%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 330Ω
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Power: 1W
Tolerance: ±5%
Operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
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MBRF2045CT-E3/45 VISHAY mbr20xxct.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; ITO220AB; Ufmax: 650mV
Type of diode: Schottky rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 150A
Leakage current: 0.1mA
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VJ1206A102JXRAT5Z VJ1206A102JXRAT5Z VISHAY vjhvarcguard.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1nF; 1.5kV; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 1nF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
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CRCW2010121KFKEF CRCW2010121KFKEF VISHAY 1.pdf Category: SMD resistors
Description: Resistor: thick film; 121kΩ; SMD; 2010; 750mW; ±1%; 400V; -55÷155°C
Operating temperature: -55...155°C
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Resistance: 121kΩ
Body dimensions: 5x2.5x0.6mm
Power: 0.75W
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 400V
Case - inch: 2010
Case - mm: 5025
Quantity in set/package: 4000pcs.
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CRCW201012K1FKEF CRCW201012K1FKEF VISHAY 1.pdf Category: SMD resistors
Description: Resistor: thick film; 12.1kΩ; SMD; 2010; 750mW; ±1%; 400V; -55÷155°C
Operating temperature: -55...155°C
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Resistance: 12.1kΩ
Body dimensions: 5.15x2.65x0.7mm
Power: 0.75W
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 400V
Case - inch: 2010
Case - mm: 5025
Quantity in set/package: 4000pcs.
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RCA06033R00FKEA RCA06033R00FKEA VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 3Ω; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 3Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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RCA06033R00FKEC RCA06033R00FKEC VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 3Ω; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 3Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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CRCW06033R00FKEA CRCW06033R00FKEA VISHAY 1.pdf Category: SMD resistors
Description: Resistor: thick film; 3Ω; SMD; 0603; 125mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 3Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 1.55x0.85x0.45mm
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
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CRCW06033R00FKTABC CRCW06033R00FKTABC VISHAY Data+Sheet+CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; 3Ω; SMD; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 3Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 1.55x0.85x0.45mm
Quantity in set/package: 5000pcs.
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MCT0603MC3008FP500 MCT0603MC3008FP500 VISHAY Category: SMD resistors
Description: Resistor: thin film; 3Ω; SMD; 0603; 0.21W; ±1%; MCT0603; M; 75V; 180mm
Type of resistor: thin film
Resistance: 3Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.21W
Tolerance: ±1%
Manufacturer series: MCT0603
Operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Version: M
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MCT06030C3008FP500 MCT06030C3008FP500 VISHAY Category: SMD resistors
Description: Resistor: thin film; 3Ω; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 3Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±1%
Manufacturer series: MCT0603
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Version: 0
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MCT06030C3008FPW00 MCT06030C3008FPW00 VISHAY Category: SMD resistors
Description: Resistor: thin film; 3Ω; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 3Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±1%
Manufacturer series: MCT0603
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 330mm
Version: 0
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MCT0603MC3008FPW00 MCT0603MC3008FPW00 VISHAY Category: SMD resistors
Description: Resistor: thin film; 3Ω; SMD; 0603; 0.21W; ±1%; MCT0603; M; 75V; 330mm
Type of resistor: thin film
Resistance: 3Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.21W
Tolerance: ±1%
Manufacturer series: MCT0603
Operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 330mm
Conform to the norm: AEC-Q200
Version: M
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M24S4FF4702T30 M24S4FF4702T30 VISHAY VISHAY_MMU-A-B.pdf Category: SMD resistors
Description: Resistor: thin film; 47kΩ; SMD; MiniMELF; 0204; 0.4W; ±1%; 200V
Mounting: SMD
Tolerance: ±1%
Case: MiniMELF
Resistance: 47kΩ
Length: 3.6mm
Body dimensions: Ø1.5x3.6mm
Power: 0.4W
Temperature coefficient: 50ppm/°C
Operating voltage: 200V
Case - inch: 0204
Case - mm: 0510
Diameter: 1.5mm
Type of resistor: thin film
Operating temperature: -55...155°C
auf Bestellung 4025 Stücke:
Lieferzeit 14-21 Tag (e)
750+0.12 EUR
1225+0.07 EUR
1700+0.05 EUR
3000+0.037 EUR
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RTO050F33R00FTE1 RTO050F33R00FTE1 VISHAY rto50.pdf Category: Power resistors
Description: Resistor: thick film; 33Ω; THT; TO220; 50W; ±1%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 33Ω
Power: 50W
Tolerance: ±1%
Operating voltage: 500V
Mounting: THT
Power without heatsink: 2.25W
Operating temperature: -55...155°C
Recommended heatsink: thermal resistance 0,87K/W
Resistor features: needs additional heatsink
Case: TO220
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RCA08053R30FKEA RCA08053R30FKEA VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 3.3Ω; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
auf Bestellung 3950 Stücke:
Lieferzeit 14-21 Tag (e)
1150+0.074 EUR
1490+0.057 EUR
1670+0.051 EUR
2140+0.039 EUR
2340+0.037 EUR
Mindestbestellmenge: 1150 Stücke
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LTO050F3R300JTE3 LTO050F3R300JTE3 VISHAY Category: Power resistors
Description: Resistor: thick film; 3.3Ω; THT; TO220; 50W; ±5%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Power: 50W
Tolerance: ±5%
Operating voltage: 500V
Power without heatsink: 2.5W
Operating temperature: -55...155°C
Recommended heatsink: thermal resistance 0,5 K/W
Resistor features: needs additional heatsink
Case: TO220
Mounting: THT
Produkt ist nicht verfügbar
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RTO050F3R300FTE1 RTO050F3R300FTE1 VISHAY rto50.pdf Category: Power resistors
Description: Resistor: thick film; 3.3Ω; THT; TO220; 50W; ±1%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Power: 50W
Tolerance: ±1%
Operating voltage: 500V
Power without heatsink: 2.25W
Operating temperature: -55...155°C
Recommended heatsink: thermal resistance 0,87K/W
Resistor features: needs additional heatsink
Case: TO220
Mounting: THT
Produkt ist nicht verfügbar
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RTO050F3R300JTE1 RTO050F3R300JTE1 VISHAY rto50.pdf Category: Power resistors
Description: Resistor: thick film; 3.3Ω; THT; TO220; 50W; ±5%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Power: 50W
Tolerance: ±5%
Operating voltage: 500V
Power without heatsink: 2.25W
Operating temperature: -55...155°C
Recommended heatsink: thermal resistance 0,87K/W
Resistor features: needs additional heatsink
Case: TO220
Mounting: THT
Produkt ist nicht verfügbar
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LTO030F3R300FTE3 LTO030F3R300FTE3 VISHAY lto30.pdf Category: Power resistors
Description: Resistor: thick film; 3.3Ω; THT; TO220; 30W; ±1%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Power: 30W
Tolerance: ±1%
Operating voltage: 500V
Power without heatsink: 2.25W
Operating temperature: -55...155°C
Recommended heatsink: thermal resistance 0,5 K/W
Resistor features: needs additional heatsink
Case: TO220
Mounting: THT
Produkt ist nicht verfügbar
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RCA04023R30FNED RCA04023R30FNED VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 3.3Ω; 0402; 63mW; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Case - inch: 0402
Case - mm: 1005
Power: 63mW
Tolerance: ±1%
Operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
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RCA06033R30FKEA RCA06033R30FKEA VISHAY rca-series.pdf Category: SMD resistors
Description: Resistor: thick film; 3.3Ω; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
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RCA06033R30FKEC RCA06033R30FKEC VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 3.3Ω; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
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RCA06033R30JNEA RCA06033R30JNEA VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 3.3Ω; 0603; 100mW; ±5%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±5%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
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RCA08053R30JNEA RCA08053R30JNEA VISHAY rca-series.pdf Category: SMD resistors
Description: Resistor: thick film; 3.3Ω; 0805; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Temperature coefficient: 200ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
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RCA12063R30FKEA RCA12063R30FKEA VISHAY rca-series.pdf Category: SMD resistors
Description: Resistor: thick film; 3.3Ω; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
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RCA12063R30FKEC RCA12063R30FKEC VISHAY rca-series.pdf Category: SMD resistors
Description: Resistor: thick film; 3.3Ω; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100000 Stücke
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SI7454FDP-T1-RE3 VISHAY si7454fdp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 23.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23.5A
Pulsed drain current: 40A
Power dissipation: 39W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SQJ481EP-T1_GE3 SQJ481EP-T1_GE3 VISHAY sqj481ep.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -9.2A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1091 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.98 EUR
69+1.25 EUR
81+1.06 EUR
91+0.94 EUR
102+0.84 EUR
250+0.76 EUR
Mindestbestellmenge: 44 Stücke
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SI7149ADP-T1-GE3 SI7149ADP-T1-GE3 VISHAY si7149adp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; 31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 31W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 43.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)
43+2.02 EUR
58+1.49 EUR
82+1.05 EUR
100+0.9 EUR
200+0.79 EUR
Mindestbestellmenge: 43 Stücke
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SIRA06DP-T1-GE3 SIRA06DP-T1-GE3 VISHAY sira06dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 40W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 80A
Technology: TrenchFET®
auf Bestellung 973 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.7 EUR
62+1.38 EUR
100+1.04 EUR
250+0.92 EUR
500+0.83 EUR
Mindestbestellmenge: 50 Stücke
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SIRA10DP-T1-GE3 SIRA10DP-T1-GE3 VISHAY sira10dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 140A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 26W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 140A
Technology: TrenchFET®
auf Bestellung 2300 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.89 EUR
69+1.24 EUR
76+1.13 EUR
101+0.84 EUR
250+0.75 EUR
500+0.74 EUR
Mindestbestellmenge: 46 Stücke
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SIRA28BDP-T1-GE3 SIRA28BDP-T1-GE3 VISHAY sira28bdp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 90A; 11W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 11W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 90A
Technology: TrenchFET®
auf Bestellung 2777 Stücke:
Lieferzeit 14-21 Tag (e)
77+1.11 EUR
121+0.7 EUR
177+0.48 EUR
500+0.38 EUR
1000+0.35 EUR
Mindestbestellmenge: 77 Stücke
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SIRA14DP-T1-GE3 SIRA14DP-T1-GE3 VISHAY sira14dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 46A; Idm: 130A; 20W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 20W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Technology: TrenchFET®
auf Bestellung 1930 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.38 EUR
107+0.8 EUR
156+0.55 EUR
500+0.43 EUR
1000+0.39 EUR
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SIR186LDP-T1-RE3 SIR186LDP-T1-RE3 VISHAY sir186ldp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 80.3A; Idm: 150A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80.3A
Power dissipation: 57W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 150A
Technology: TrenchFET®
auf Bestellung 4 Stücke:
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4+21.28 EUR
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SIR622DP-T1-RE3 SIR622DP-T1-RE3 VISHAY sir622dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 51.6A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Technology: TrenchFET®
auf Bestellung 4950 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.55 EUR
45+1.93 EUR
54+1.59 EUR
62+1.38 EUR
100+1.21 EUR
500+1.15 EUR
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SIRA90DP-T1-GE3 SIRA90DP-T1-GE3 VISHAY sira90dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Technology: TrenchFET®
auf Bestellung 2208 Stücke:
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25+3.44 EUR
34+2.57 EUR
50+1.82 EUR
100+1.58 EUR
250+1.33 EUR
500+1.19 EUR
1000+1.12 EUR
1500+1.07 EUR
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SIR422DP-T1-GE3 SIR422DP-T1-GE3 VISHAY sir422dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 70A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 22.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 70A
Technology: TrenchFET®
auf Bestellung 2480 Stücke:
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40+2.18 EUR
47+1.82 EUR
54+1.59 EUR
65+1.31 EUR
100+1 EUR
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SIRA52ADP-T1-RE3 SIRA52ADP-T1-RE3 VISHAY sira52adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Power dissipation: 30.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Technology: TrenchFET®
auf Bestellung 2944 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.9 EUR
52+1.65 EUR
57+1.51 EUR
65+1.33 EUR
100+1.24 EUR
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SiRC16DP-T1-GE3SiRC16DP-T1-GE3
SiRC16DP-T1-GE3SiRC16DP-T1-GE3
 SiRC16DP-T1-GE3 VISHAY sirc16dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 25V; 60A
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Power dissipation: 34.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 250A
Technology: TrenchFET®
auf Bestellung 2628 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.94 EUR
53+1.63 EUR
59+1.45 EUR
70+1.23 EUR
100+1.15 EUR
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SI7288DP-T1-GE3 SI7288DP-T1-GE3 VISHAY si7288dp.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 20A; Idm: 50A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 15.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Technology: TrenchFET®
auf Bestellung 1927 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.68 EUR
38+2.26 EUR
43+1.99 EUR
61+1.42 EUR
100+1.21 EUR
500+1.07 EUR
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SQJ200EP-T1_GE3 VISHAY sqj200ep.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SQJ200EP-T1_JE3 VISHAY Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SQJ208EP-T1_GE3 VISHAY sqj208ep.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SQJ262EP-T1_GE3 VISHAY sqj262ep.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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SQJ560EP-T1_GE3 VISHAY sqj560ep.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60V; 34W; PowerPAK® SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Power dissipation: 34W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SQJ500AEP-T1_GE3 VISHAY sqj500aep.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40V; 48W; PowerPAK® SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SQJ504EP-T1_GE3 VISHAY sqj504ep.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40V; 34W; PowerPAK® SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Power dissipation: 34W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SIR580DP-T1-BE3 VISHAY sir580dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 146A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 146A
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 50.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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SIR164ADP-T1-GE3 VISHAY sir164adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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SIR4406DP-T1-GE3 VISHAY sir4406dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 78A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 78A
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 4.75mΩ
Mounting: SMD
Gate charge: 23.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
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SIR512DP-T1-BE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 100A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
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SIR584DP-T1-BE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 36.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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SIR626LDP-T1-UE3 VISHAY sir626ldp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 186A
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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SIR680LDP-T1-UE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 130A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
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SQJ204EP-T1_GE3 VISHAY sqj204ep.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Case: PowerPAK® SO8
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SQJ244EP-T1_GE3 VISHAY sqj244ep.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SQJ500AEP-T1_BE3 VISHAY Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40V; 48W; PowerPAK® SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SQJ504EP-T1_BE3 VISHAY sqj504ep.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40V; 34W; PowerPAK® SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Power dissipation: 34W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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VJ0603Y273KXXCW1BC VJ0603Y273KXXCW1BC VISHAY vjw1bcbascomseries.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 27nF; 25V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 27nF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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CRCW2512330RJNEG CRCW.pdf
CRCW2512330RJNEG
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 330Ω; SMD; 2512; 1W; ±5%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 330Ω
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Power: 1W
Tolerance: ±5%
Operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Produkt ist nicht verfügbar
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MBRF2045CT-E3/45 mbr20xxct.pdf
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; ITO220AB; Ufmax: 650mV
Type of diode: Schottky rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 150A
Leakage current: 0.1mA
Produkt ist nicht verfügbar
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VJ1206A102JXRAT5Z vjhvarcguard.pdf
VJ1206A102JXRAT5Z
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1nF; 1.5kV; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 1nF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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CRCW2010121KFKEF 1.pdf
CRCW2010121KFKEF
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 121kΩ; SMD; 2010; 750mW; ±1%; 400V; -55÷155°C
Operating temperature: -55...155°C
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Resistance: 121kΩ
Body dimensions: 5x2.5x0.6mm
Power: 0.75W
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 400V
Case - inch: 2010
Case - mm: 5025
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
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CRCW201012K1FKEF 1.pdf
CRCW201012K1FKEF
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 12.1kΩ; SMD; 2010; 750mW; ±1%; 400V; -55÷155°C
Operating temperature: -55...155°C
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Resistance: 12.1kΩ
Body dimensions: 5.15x2.65x0.7mm
Power: 0.75W
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 400V
Case - inch: 2010
Case - mm: 5025
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
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RCA06033R00FKEA rcae3.pdf
RCA06033R00FKEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3Ω; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 3Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
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RCA06033R00FKEC rcae3.pdf
RCA06033R00FKEC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3Ω; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 3Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
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CRCW06033R00FKEA 1.pdf
CRCW06033R00FKEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3Ω; SMD; 0603; 125mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 3Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 1.55x0.85x0.45mm
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
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CRCW06033R00FKTABC Data+Sheet+CRCW_BCe3.pdf
CRCW06033R00FKTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3Ω; SMD; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 3Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 1.55x0.85x0.45mm
Quantity in set/package: 5000pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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MCT0603MC3008FP500
MCT0603MC3008FP500
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 3Ω; SMD; 0603; 0.21W; ±1%; MCT0603; M; 75V; 180mm
Type of resistor: thin film
Resistance: 3Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.21W
Tolerance: ±1%
Manufacturer series: MCT0603
Operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Version: M
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MCT06030C3008FP500
MCT06030C3008FP500
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 3Ω; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 3Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±1%
Manufacturer series: MCT0603
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Version: 0
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MCT06030C3008FPW00
MCT06030C3008FPW00
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 3Ω; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 3Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±1%
Manufacturer series: MCT0603
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 330mm
Version: 0
Produkt ist nicht verfügbar
Mindestbestellmenge: 20000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MCT0603MC3008FPW00
MCT0603MC3008FPW00
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 3Ω; SMD; 0603; 0.21W; ±1%; MCT0603; M; 75V; 330mm
Type of resistor: thin film
Resistance: 3Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.21W
Tolerance: ±1%
Manufacturer series: MCT0603
Operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 330mm
Conform to the norm: AEC-Q200
Version: M
Produkt ist nicht verfügbar
Mindestbestellmenge: 20000 Stücke
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M24S4FF4702T30 VISHAY_MMU-A-B.pdf
M24S4FF4702T30
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 47kΩ; SMD; MiniMELF; 0204; 0.4W; ±1%; 200V
Mounting: SMD
Tolerance: ±1%
Case: MiniMELF
Resistance: 47kΩ
Length: 3.6mm
Body dimensions: Ø1.5x3.6mm
Power: 0.4W
Temperature coefficient: 50ppm/°C
Operating voltage: 200V
Case - inch: 0204
Case - mm: 0510
Diameter: 1.5mm
Type of resistor: thin film
Operating temperature: -55...155°C
auf Bestellung 4025 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
750+0.12 EUR
1225+0.07 EUR
1700+0.05 EUR
3000+0.037 EUR
Mindestbestellmenge: 750 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTO050F33R00FTE1 rto50.pdf
RTO050F33R00FTE1
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: thick film; 33Ω; THT; TO220; 50W; ±1%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 33Ω
Power: 50W
Tolerance: ±1%
Operating voltage: 500V
Mounting: THT
Power without heatsink: 2.25W
Operating temperature: -55...155°C
Recommended heatsink: thermal resistance 0,87K/W
Resistor features: needs additional heatsink
Case: TO220
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RCA08053R30FKEA rcae3.pdf
RCA08053R30FKEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3.3Ω; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
auf Bestellung 3950 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1150+0.074 EUR
1490+0.057 EUR
1670+0.051 EUR
2140+0.039 EUR
2340+0.037 EUR
Mindestbestellmenge: 1150 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
LTO050F3R300JTE3
LTO050F3R300JTE3
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: thick film; 3.3Ω; THT; TO220; 50W; ±5%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Power: 50W
Tolerance: ±5%
Operating voltage: 500V
Power without heatsink: 2.5W
Operating temperature: -55...155°C
Recommended heatsink: thermal resistance 0,5 K/W
Resistor features: needs additional heatsink
Case: TO220
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTO050F3R300FTE1 rto50.pdf
RTO050F3R300FTE1
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: thick film; 3.3Ω; THT; TO220; 50W; ±1%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Power: 50W
Tolerance: ±1%
Operating voltage: 500V
Power without heatsink: 2.25W
Operating temperature: -55...155°C
Recommended heatsink: thermal resistance 0,87K/W
Resistor features: needs additional heatsink
Case: TO220
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RTO050F3R300JTE1 rto50.pdf
RTO050F3R300JTE1
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: thick film; 3.3Ω; THT; TO220; 50W; ±5%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Power: 50W
Tolerance: ±5%
Operating voltage: 500V
Power without heatsink: 2.25W
Operating temperature: -55...155°C
Recommended heatsink: thermal resistance 0,87K/W
Resistor features: needs additional heatsink
Case: TO220
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
LTO030F3R300FTE3 lto30.pdf
LTO030F3R300FTE3
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: thick film; 3.3Ω; THT; TO220; 30W; ±1%; 500V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Power: 30W
Tolerance: ±1%
Operating voltage: 500V
Power without heatsink: 2.25W
Operating temperature: -55...155°C
Recommended heatsink: thermal resistance 0,5 K/W
Resistor features: needs additional heatsink
Case: TO220
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RCA04023R30FNED rcae3.pdf
RCA04023R30FNED
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3.3Ω; 0402; 63mW; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Case - inch: 0402
Case - mm: 1005
Power: 63mW
Tolerance: ±1%
Operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RCA06033R30FKEA rca-series.pdf
RCA06033R30FKEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3.3Ω; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RCA06033R30FKEC rcae3.pdf
RCA06033R30FKEC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3.3Ω; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Mindestbestellmenge: 20000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RCA06033R30JNEA rcae3.pdf
RCA06033R30JNEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3.3Ω; 0603; 100mW; ±5%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±5%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RCA08053R30JNEA rca-series.pdf
RCA08053R30JNEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3.3Ω; 0805; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Temperature coefficient: 200ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RCA12063R30FKEA rca-series.pdf
RCA12063R30FKEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3.3Ω; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RCA12063R30FKEC rca-series.pdf
RCA12063R30FKEC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3.3Ω; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3Ω
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Mindestbestellmenge: 100000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7454FDP-T1-RE3 si7454fdp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 23.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23.5A
Pulsed drain current: 40A
Power dissipation: 39W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ481EP-T1_GE3 sqj481ep.pdf
SQJ481EP-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -9.2A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1091 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
44+1.98 EUR
69+1.25 EUR
81+1.06 EUR
91+0.94 EUR
102+0.84 EUR
250+0.76 EUR
Mindestbestellmenge: 44 Stücke
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SI7149ADP-T1-GE3 si7149adp.pdf
SI7149ADP-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; 31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 31W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 43.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
43+2.02 EUR
58+1.49 EUR
82+1.05 EUR
100+0.9 EUR
200+0.79 EUR
Mindestbestellmenge: 43 Stücke
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SIRA06DP-T1-GE3 sira06dp.pdf
SIRA06DP-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 40W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 80A
Technology: TrenchFET®
auf Bestellung 973 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
50+1.7 EUR
62+1.38 EUR
100+1.04 EUR
250+0.92 EUR
500+0.83 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIRA10DP-T1-GE3 sira10dp.pdf
SIRA10DP-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 140A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 26W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 140A
Technology: TrenchFET®
auf Bestellung 2300 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
46+1.89 EUR
69+1.24 EUR
76+1.13 EUR
101+0.84 EUR
250+0.75 EUR
500+0.74 EUR
Mindestbestellmenge: 46 Stücke
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SIRA28BDP-T1-GE3 sira28bdp.pdf
SIRA28BDP-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 90A; 11W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 11W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 90A
Technology: TrenchFET®
auf Bestellung 2777 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
77+1.11 EUR
121+0.7 EUR
177+0.48 EUR
500+0.38 EUR
1000+0.35 EUR
Mindestbestellmenge: 77 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIRA14DP-T1-GE3 sira14dp.pdf
SIRA14DP-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 46A; Idm: 130A; 20W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 20W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Technology: TrenchFET®
auf Bestellung 1930 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
62+1.38 EUR
107+0.8 EUR
156+0.55 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 62 Stücke
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SIR186LDP-T1-RE3 sir186ldp.pdf
SIR186LDP-T1-RE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 80.3A; Idm: 150A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80.3A
Power dissipation: 57W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 150A
Technology: TrenchFET®
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4+21.28 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR622DP-T1-RE3 sir622dp.pdf
SIR622DP-T1-RE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 51.6A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Technology: TrenchFET®
auf Bestellung 4950 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
34+2.55 EUR
45+1.93 EUR
54+1.59 EUR
62+1.38 EUR
100+1.21 EUR
500+1.15 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIRA90DP-T1-GE3 sira90dp.pdf
SIRA90DP-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Technology: TrenchFET®
auf Bestellung 2208 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
25+3.44 EUR
34+2.57 EUR
50+1.82 EUR
100+1.58 EUR
250+1.33 EUR
500+1.19 EUR
1000+1.12 EUR
1500+1.07 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR422DP-T1-GE3 sir422dp.pdf
SIR422DP-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 70A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 22.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 70A
Technology: TrenchFET®
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
40+2.18 EUR
47+1.82 EUR
54+1.59 EUR
65+1.31 EUR
100+1 EUR
Mindestbestellmenge: 40 Stücke
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SIRA52ADP-T1-RE3 sira52adp.pdf
SIRA52ADP-T1-RE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Power dissipation: 30.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Technology: TrenchFET®
auf Bestellung 2944 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
45+1.9 EUR
52+1.65 EUR
57+1.51 EUR
65+1.33 EUR
100+1.24 EUR
Mindestbestellmenge: 45 Stücke
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SiRC16DP-T1-GE3 sirc16dp.pdf
SiRC16DP-T1-GE3SiRC16DP-T1-GE3
SiRC16DP-T1-GE3SiRC16DP-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 25V; 60A
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Power dissipation: 34.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 250A
Technology: TrenchFET®
auf Bestellung 2628 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
44+1.94 EUR
53+1.63 EUR
59+1.45 EUR
70+1.23 EUR
100+1.15 EUR
Mindestbestellmenge: 44 Stücke
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SI7288DP-T1-GE3 si7288dp.pdf
SI7288DP-T1-GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 20A; Idm: 50A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 15.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Technology: TrenchFET®
auf Bestellung 1927 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
32+2.68 EUR
38+2.26 EUR
43+1.99 EUR
61+1.42 EUR
100+1.21 EUR
500+1.07 EUR
Mindestbestellmenge: 32 Stücke
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SQJ200EP-T1_GE3 sqj200ep.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ200EP-T1_JE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SQJ208EP-T1_GE3 sqj208ep.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SQJ262EP-T1_GE3 sqj262ep.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SQJ560EP-T1_GE3 sqj560ep.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60V; 34W; PowerPAK® SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Power dissipation: 34W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SQJ500AEP-T1_GE3 sqj500aep.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40V; 48W; PowerPAK® SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ504EP-T1_GE3 sqj504ep.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40V; 34W; PowerPAK® SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Power dissipation: 34W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR580DP-T1-BE3 sir580dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 146A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 146A
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 50.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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SIR164ADP-T1-GE3 sir164adp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR4406DP-T1-GE3 sir4406dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 78A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 78A
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 4.75mΩ
Mounting: SMD
Gate charge: 23.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR512DP-T1-BE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 100A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR584DP-T1-BE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 36.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR626LDP-T1-UE3 sir626ldp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 186A
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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SIR680LDP-T1-UE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 130A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ204EP-T1_GE3 sqj204ep.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Case: PowerPAK® SO8
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ244EP-T1_GE3 sqj244ep.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ500AEP-T1_BE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40V; 48W; PowerPAK® SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ504EP-T1_BE3 sqj504ep.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40V; 34W; PowerPAK® SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Power dissipation: 34W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VJ0603Y273KXXCW1BC vjw1bcbascomseries.pdf
VJ0603Y273KXXCW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 27nF; 25V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 27nF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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