Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74598) > Seite 1161 nach 1244
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DMN3065LW-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 0.77W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 85mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 461 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3067LW-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 10A; 0.5W; SOT323 Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SOT323 Polarisation: unipolar On-state resistance: 67mΩ Power dissipation: 0.5W Drain current: 2.1A Pulsed drain current: 10A Gate-source voltage: ±12V Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 718 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3150L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23 Polarisation: unipolar On-state resistance: 54mΩ Power dissipation: 1.4W Drain current: 3.1A Gate-source voltage: ±12V Pulsed drain current: 15A Drain-source voltage: 30V Kind of package: 7 inch reel; tape Case: SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2865 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3190LDW-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.9A Power dissipation: 0.32W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Pulsed drain current: 9.6A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 513 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3200U-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.2A; Idm: 9A; 650mW; SOT23-3 Mounting: SMD Pulsed drain current: 9A Gate-source voltage: ±8V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Case: SOT23-3 Polarisation: unipolar Kind of package: 7 inch reel; tape On-state resistance: 0.2Ω Power dissipation: 0.65W Drain current: 2.2A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1445 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN32D2LDF-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.4A Power dissipation: 0.28W Case: SOT353 Gate-source voltage: ±10V On-state resistance: 2.2Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Semiconductor structure: common source Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1647 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3404L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3A; 0.72W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3A Power dissipation: 0.72W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 82mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8999 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3730U-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 0.75A; Idm: 10A; 0.45W; SOT23 Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 0.45W On-state resistance: 0.46Ω Drain current: 0.75A Gate-source voltage: ±8V Pulsed drain current: 10A Drain-source voltage: 30V Case: SOT23 Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1404 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN53D0L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1594 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN53D0LDW-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.25A Power dissipation: 0.31W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 895 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN53D0LQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN601K-7 | DIODES INCORPORATED |
DMN601K-7 SMD N channel transistors |
auf Bestellung 425 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN6040SFDE-7 | DIODES INCORPORATED |
DMN6040SFDE-7 SMD N channel transistors |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN6040SK3-13 | DIODES INCORPORATED |
DMN6040SK3-13 SMD N channel transistors |
auf Bestellung 1655 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN6040SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8 Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Polarisation: unipolar On-state resistance: 55mΩ Power dissipation: 0.8W Drain current: 4.1A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: 13 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 933 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN6040SSS-13 | DIODES INCORPORATED |
DMN6040SSS-13 SMD N channel transistors |
auf Bestellung 2590 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN6040SVT-7 | DIODES INCORPORATED |
DMN6040SVT-7 SMD N channel transistors |
auf Bestellung 2990 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN6068SE-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2553 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN6070SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.6A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2494 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN6075S-7 | DIODES INCORPORATED |
DMN6075S-7 SMD N channel transistors |
auf Bestellung 1292 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN6140L-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23 Kind of package: 13 inch reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SOT23 On-state resistance: 0.14Ω Power dissipation: 0.7W Drain current: 1.2A Pulsed drain current: 10A Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 183 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN6140L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23 Kind of package: 7 inch reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SOT23 On-state resistance: 0.14Ω Power dissipation: 0.7W Drain current: 1.2A Pulsed drain current: 10A Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2693 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN6140LQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.4W; SOT23-3 Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SOT23-3 Gate charge: 8.6nC On-state resistance: 0.17Ω Power dissipation: 0.4W Drain current: 1.2A Pulsed drain current: 10A Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5635 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN6140LQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23 Kind of package: 7 inch reel; tape Application: automotive industry Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SOT23 On-state resistance: 0.14Ω Power dissipation: 0.7W Drain current: 1.2A Pulsed drain current: 10A Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 607 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN61D8LVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.5A Drain-source voltage: 60V Gate charge: 740pC On-state resistance: 2.4Ω Power dissipation: 1.09W Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: TSOT26 Kind of channel: enhancement Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2823 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN62D0SFD-7 | DIODES INCORPORATED |
DMN62D0SFD-7 SMD N channel transistors |
auf Bestellung 118 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN62D0U-7 | DIODES INCORPORATED |
DMN62D0U-7 SMD N channel transistors |
auf Bestellung 3020 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN62D0UDW-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.29A; 0.32W; SOT363; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.29A Power dissipation: 0.32W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1850 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN62D0UW-7 | DIODES INCORPORATED |
DMN62D0UW-7 SMD N channel transistors |
auf Bestellung 880 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN63D8LDW-7 | DIODES INCORPORATED |
DMN63D8LDW-7 Multi channel transistors |
auf Bestellung 104 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN63D8LDWQ-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.3W; SOT363; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.26A Power dissipation: 0.3W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2.8Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4575 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN63D8LV-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.26A Power dissipation: 0.45W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.8Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1795 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN65D8L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.54W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1762 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN65D8LW-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.26A; 0.3W; SOT323; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.26A Power dissipation: 0.3W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2978 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN67D8L-7 | DIODES INCORPORATED |
DMN67D8L-7 SMD N channel transistors |
auf Bestellung 107 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN90H8D5HCT | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 2.5A; 125W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube On-state resistance: 7Ω Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.5A Power dissipation: 125W Gate-source voltage: ±30V Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 66 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMNH10H028SCT | DIODES INCORPORATED |
DMNH10H028SCT THT N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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DMNH45M7SCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 155A; Idm: 200A; 96W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 155A Pulsed drain current: 200A Power dissipation: 96W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.4Ω Mounting: THT Gate charge: 36.1nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 64 Stücke: Lieferzeit 7-14 Tag (e) |
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DMNH6008SCT | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Pulsed drain current: 200A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 69 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP1045UFY4-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W Type of transistor: P-MOSFET Mounting: SMD Case: X2-DFN2015-3 Polarisation: unipolar Pulsed drain current: -25A Drain-source voltage: -12V Drain current: -5.1A Gate charge: 23.7nC On-state resistance: 75mΩ Power dissipation: 1.1W Kind of package: 7 inch reel; tape Gate-source voltage: ±8V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2369 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP10H400SE-13 | DIODES INCORPORATED |
DMP10H400SE-13 SMD P channel transistors |
auf Bestellung 2611 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP10H400SK3-13 | DIODES INCORPORATED |
DMP10H400SK3-13 SMD P channel transistors |
auf Bestellung 2120 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP10H4D2S-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.21A Power dissipation: 0.38W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3005 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2004K-7 | DIODES INCORPORATED |
DMP2004K-7 SMD P channel transistors |
auf Bestellung 9000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2022LSS-13 | DIODES INCORPORATED |
DMP2022LSS-13 SMD P channel transistors |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2035U-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD Polarisation: unipolar Version: ESD Case: SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Drain current: -2.9A Drain-source voltage: -20V On-state resistance: 62mΩ Power dissipation: 0.81W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3069 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2035UVT-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD Polarisation: unipolar Version: ESD Case: TSOT26 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Drain current: -4.8A Drain-source voltage: -20V On-state resistance: 62mΩ Power dissipation: 1.2W Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3756 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2040USS-13 | DIODES INCORPORATED |
DMP2040USS-13 SMD P channel transistors |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2045U-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1223 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2100UFU-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6 Polarisation: unipolar Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: P-MOSFET x2 Drain-source voltage: -20V Drain current: -4.1A On-state resistance: 75mΩ Power dissipation: 0.9W Gate-source voltage: ±10V Kind of package: 7 inch reel; tape Case: U-DFN2030-6 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2480 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2100UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23; ESD Polarisation: unipolar Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: P-MOSFET Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 75mΩ Power dissipation: 0.8W Gate-source voltage: ±10V Kind of package: 7 inch reel; tape Application: automotive industry Case: SOT23 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2255 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2104LP-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.2A Power dissipation: 0.5W Case: DFN1411-3 Gate-source voltage: ±12V On-state resistance: 0.24Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1458 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2120U-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23 Type of transistor: P-MOSFET Case: SOT23 Mounting: SMD Polarisation: unipolar Pulsed drain current: -20A Drain-source voltage: -20V Drain current: -3A On-state resistance: 62mΩ Power dissipation: 0.8W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1772 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2130L-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A On-state resistance: 0.125Ω Power dissipation: 1.4W Gate-source voltage: ±10V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2160UFDB-7 | DIODES INCORPORATED |
DMP2160UFDB-7 SMD P channel transistors |
auf Bestellung 2977 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP21D6UFD-7 | DIODES INCORPORATED |
DMP21D6UFD-7 SMD P channel transistors |
auf Bestellung 2760 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2240UDM-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26 Case: SOT26 Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET x2 Drain-source voltage: -20V Drain current: -1.5A Power dissipation: 0.6W Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6852 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2240UW-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 0.25W; SOT323 Case: SOT323 Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET Drain-source voltage: -20V Pulsed drain current: -5A Drain current: -1A On-state resistance: 0.15Ω Power dissipation: 0.25W Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 437 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2240UWQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 250mW; SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1A Power dissipation: 0.25W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.24Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: -5A Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2950 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2305U-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.2A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.2A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 60mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3015 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN3065LW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.77W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.77W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 461 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 202+ | 0.35 EUR |
| 283+ | 0.25 EUR |
| 329+ | 0.22 EUR |
| 461+ | 0.16 EUR |
| 6000+ | 0.099 EUR |
| DMN3067LW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 10A; 0.5W; SOT323
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT323
Polarisation: unipolar
On-state resistance: 67mΩ
Power dissipation: 0.5W
Drain current: 2.1A
Pulsed drain current: 10A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 10A; 0.5W; SOT323
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT323
Polarisation: unipolar
On-state resistance: 67mΩ
Power dissipation: 0.5W
Drain current: 2.1A
Pulsed drain current: 10A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 718 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 268+ | 0.27 EUR |
| 376+ | 0.19 EUR |
| 435+ | 0.16 EUR |
| 596+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 1500+ | 0.1 EUR |
| DMN3150L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23
Polarisation: unipolar
On-state resistance: 54mΩ
Power dissipation: 1.4W
Drain current: 3.1A
Gate-source voltage: ±12V
Pulsed drain current: 15A
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23
Polarisation: unipolar
On-state resistance: 54mΩ
Power dissipation: 1.4W
Drain current: 3.1A
Gate-source voltage: ±12V
Pulsed drain current: 15A
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2865 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 214+ | 0.33 EUR |
| 264+ | 0.27 EUR |
| 360+ | 0.2 EUR |
| 685+ | 0.1 EUR |
| 725+ | 0.099 EUR |
| 6000+ | 0.094 EUR |
| DMN3190LDW-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 9.6A
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 9.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 513 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 417+ | 0.17 EUR |
| 481+ | 0.15 EUR |
| 513+ | 0.14 EUR |
| DMN3200U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; Idm: 9A; 650mW; SOT23-3
Mounting: SMD
Pulsed drain current: 9A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT23-3
Polarisation: unipolar
Kind of package: 7 inch reel; tape
On-state resistance: 0.2Ω
Power dissipation: 0.65W
Drain current: 2.2A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; Idm: 9A; 650mW; SOT23-3
Mounting: SMD
Pulsed drain current: 9A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT23-3
Polarisation: unipolar
Kind of package: 7 inch reel; tape
On-state resistance: 0.2Ω
Power dissipation: 0.65W
Drain current: 2.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1445 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 196+ | 0.37 EUR |
| 261+ | 0.27 EUR |
| 298+ | 0.24 EUR |
| 459+ | 0.16 EUR |
| 486+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
| DMN32D2LDF-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Semiconductor structure: common source
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Semiconductor structure: common source
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1647 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 219+ | 0.33 EUR |
| 321+ | 0.22 EUR |
| 382+ | 0.19 EUR |
| 812+ | 0.088 EUR |
| 860+ | 0.083 EUR |
| 9000+ | 0.08 EUR |
| DMN3404L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 82mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 82mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8999 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 286+ | 0.25 EUR |
| 400+ | 0.18 EUR |
| 463+ | 0.15 EUR |
| 1069+ | 0.067 EUR |
| 1132+ | 0.063 EUR |
| 24000+ | 0.062 EUR |
| DMN3730U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.75A; Idm: 10A; 0.45W; SOT23
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.45W
On-state resistance: 0.46Ω
Drain current: 0.75A
Gate-source voltage: ±8V
Pulsed drain current: 10A
Drain-source voltage: 30V
Case: SOT23
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.75A; Idm: 10A; 0.45W; SOT23
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.45W
On-state resistance: 0.46Ω
Drain current: 0.75A
Gate-source voltage: ±8V
Pulsed drain current: 10A
Drain-source voltage: 30V
Case: SOT23
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1404 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 247+ | 0.29 EUR |
| 353+ | 0.2 EUR |
| 407+ | 0.18 EUR |
| 596+ | 0.12 EUR |
| 633+ | 0.11 EUR |
| DMN53D0L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1594 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 382+ | 0.19 EUR |
| 470+ | 0.15 EUR |
| 667+ | 0.11 EUR |
| 1158+ | 0.062 EUR |
| 1226+ | 0.058 EUR |
| 3000+ | 0.056 EUR |
| DMN53D0LDW-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.25A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.25A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 895 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 596+ | 0.12 EUR |
| 751+ | 0.095 EUR |
| 827+ | 0.087 EUR |
| 895+ | 0.08 EUR |
| 1000+ | 0.072 EUR |
| DMN53D0LQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.75 EUR |
| 50+ | 1.43 EUR |
| 100+ | 0.72 EUR |
| 259+ | 0.27 EUR |
| 713+ | 0.1 EUR |
| 3000+ | 0.06 EUR |
| DMN601K-7 |
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Hersteller: DIODES INCORPORATED
DMN601K-7 SMD N channel transistors
DMN601K-7 SMD N channel transistors
auf Bestellung 425 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 425+ | 0.17 EUR |
| 673+ | 0.11 EUR |
| 1852+ | 0.039 EUR |
| DMN6040SFDE-7 |
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Hersteller: DIODES INCORPORATED
DMN6040SFDE-7 SMD N channel transistors
DMN6040SFDE-7 SMD N channel transistors
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 272+ | 0.26 EUR |
| 286+ | 0.25 EUR |
| 3000+ | 0.24 EUR |
| DMN6040SK3-13 |
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Hersteller: DIODES INCORPORATED
DMN6040SK3-13 SMD N channel transistors
DMN6040SK3-13 SMD N channel transistors
auf Bestellung 1655 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 244+ | 0.29 EUR |
| 258+ | 0.28 EUR |
| 2500+ | 0.27 EUR |
| DMN6040SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
On-state resistance: 55mΩ
Power dissipation: 0.8W
Drain current: 4.1A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
On-state resistance: 55mΩ
Power dissipation: 0.8W
Drain current: 4.1A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 933 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 108+ | 0.67 EUR |
| 149+ | 0.48 EUR |
| 264+ | 0.27 EUR |
| 278+ | 0.26 EUR |
| 2500+ | 0.25 EUR |
| DMN6040SSS-13 |
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Hersteller: DIODES INCORPORATED
DMN6040SSS-13 SMD N channel transistors
DMN6040SSS-13 SMD N channel transistors
auf Bestellung 2590 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 256+ | 0.28 EUR |
| 319+ | 0.22 EUR |
| 336+ | 0.21 EUR |
| 500+ | 0.2 EUR |
| DMN6040SVT-7 |
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Hersteller: DIODES INCORPORATED
DMN6040SVT-7 SMD N channel transistors
DMN6040SVT-7 SMD N channel transistors
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 432+ | 0.17 EUR |
| 459+ | 0.16 EUR |
| DMN6068SE-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2553 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 93+ | 0.77 EUR |
| 128+ | 0.56 EUR |
| 166+ | 0.43 EUR |
| 302+ | 0.24 EUR |
| 319+ | 0.22 EUR |
| DMN6070SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.6A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.6A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2494 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 116+ | 0.62 EUR |
| 129+ | 0.56 EUR |
| 280+ | 0.26 EUR |
| 296+ | 0.24 EUR |
| 1000+ | 0.23 EUR |
| DMN6075S-7 |
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Hersteller: DIODES INCORPORATED
DMN6075S-7 SMD N channel transistors
DMN6075S-7 SMD N channel transistors
auf Bestellung 1292 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 249+ | 0.29 EUR |
| 715+ | 0.1 EUR |
| 794+ | 0.09 EUR |
| 834+ | 0.086 EUR |
| DMN6140L-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.14Ω
Power dissipation: 0.7W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.14Ω
Power dissipation: 0.7W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 183 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 183+ | 0.39 EUR |
| 199+ | 0.36 EUR |
| 500+ | 0.14 EUR |
| 548+ | 0.13 EUR |
| DMN6140L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.14Ω
Power dissipation: 0.7W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.14Ω
Power dissipation: 0.7W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2693 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 481+ | 0.15 EUR |
| 575+ | 0.12 EUR |
| 807+ | 0.089 EUR |
| 848+ | 0.084 EUR |
| DMN6140LQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.4W; SOT23-3
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23-3
Gate charge: 8.6nC
On-state resistance: 0.17Ω
Power dissipation: 0.4W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.4W; SOT23-3
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23-3
Gate charge: 8.6nC
On-state resistance: 0.17Ω
Power dissipation: 0.4W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5635 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 205+ | 0.35 EUR |
| 317+ | 0.23 EUR |
| 589+ | 0.12 EUR |
| 625+ | 0.11 EUR |
| DMN6140LQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.14Ω
Power dissipation: 0.7W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.14Ω
Power dissipation: 0.7W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 607 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 177+ | 0.41 EUR |
| 205+ | 0.35 EUR |
| 327+ | 0.22 EUR |
| 400+ | 0.18 EUR |
| 589+ | 0.12 EUR |
| DMN61D8LVT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.5A
Drain-source voltage: 60V
Gate charge: 740pC
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: TSOT26
Kind of channel: enhancement
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.5A
Drain-source voltage: 60V
Gate charge: 740pC
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: TSOT26
Kind of channel: enhancement
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2823 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 93+ | 0.77 EUR |
| 127+ | 0.56 EUR |
| 157+ | 0.46 EUR |
| 332+ | 0.22 EUR |
| 350+ | 0.2 EUR |
| DMN62D0SFD-7 |
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Hersteller: DIODES INCORPORATED
DMN62D0SFD-7 SMD N channel transistors
DMN62D0SFD-7 SMD N channel transistors
auf Bestellung 118 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 118+ | 0.6 EUR |
| 198+ | 0.36 EUR |
| 544+ | 0.13 EUR |
| 15000+ | 0.078 EUR |
| DMN62D0U-7 |
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Hersteller: DIODES INCORPORATED
DMN62D0U-7 SMD N channel transistors
DMN62D0U-7 SMD N channel transistors
auf Bestellung 3020 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 562+ | 0.13 EUR |
| 1619+ | 0.044 EUR |
| 1707+ | 0.042 EUR |
| DMN62D0UDW-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.29A; 0.32W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.29A; 0.32W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1850 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 459+ | 0.16 EUR |
| 635+ | 0.11 EUR |
| 812+ | 0.088 EUR |
| 858+ | 0.083 EUR |
| 1000+ | 0.082 EUR |
| 3000+ | 0.08 EUR |
| DMN62D0UW-7 |
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Hersteller: DIODES INCORPORATED
DMN62D0UW-7 SMD N channel transistors
DMN62D0UW-7 SMD N channel transistors
auf Bestellung 880 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 263+ | 0.27 EUR |
| 880+ | 0.082 EUR |
| 1034+ | 0.069 EUR |
| 9000+ | 0.041 EUR |
| DMN63D8LDW-7 |
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Hersteller: DIODES INCORPORATED
DMN63D8LDW-7 Multi channel transistors
DMN63D8LDW-7 Multi channel transistors
auf Bestellung 104 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 104+ | 0.69 EUR |
| 283+ | 0.26 EUR |
| 778+ | 0.092 EUR |
| 9000+ | 0.054 EUR |
| DMN63D8LDWQ-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.3W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.3W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4575 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 491+ | 0.15 EUR |
| 601+ | 0.12 EUR |
| 842+ | 0.085 EUR |
| 1197+ | 0.06 EUR |
| 1244+ | 0.057 EUR |
| 1266+ | 0.056 EUR |
| DMN63D8LV-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.45W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.45W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1795 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 319+ | 0.22 EUR |
| 456+ | 0.16 EUR |
| 535+ | 0.13 EUR |
| 1211+ | 0.059 EUR |
| 1283+ | 0.056 EUR |
| 6000+ | 0.055 EUR |
| DMN65D8L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1762 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 725+ | 0.099 EUR |
| 1122+ | 0.064 EUR |
| 1359+ | 0.053 EUR |
| 1762+ | 0.04 EUR |
| DMN65D8LW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.26A; 0.3W; SOT323; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.26A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.26A; 0.3W; SOT323; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.26A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2978 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 173+ | 0.41 EUR |
| 203+ | 0.35 EUR |
| 382+ | 0.19 EUR |
| 404+ | 0.18 EUR |
| 500+ | 0.17 EUR |
| DMN67D8L-7 |
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Hersteller: DIODES INCORPORATED
DMN67D8L-7 SMD N channel transistors
DMN67D8L-7 SMD N channel transistors
auf Bestellung 107 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 572+ | 0.12 EUR |
| 1572+ | 0.046 EUR |
| 9000+ | 0.028 EUR |
| DMN90H8D5HCT |
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Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.5A; 125W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
On-state resistance: 7Ω
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.5A
Power dissipation: 125W
Gate-source voltage: ±30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.5A; 125W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
On-state resistance: 7Ω
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.5A
Power dissipation: 125W
Gate-source voltage: ±30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 66 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| DMNH10H028SCT |
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Hersteller: DIODES INCORPORATED
DMNH10H028SCT THT N channel transistors
DMNH10H028SCT THT N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 71+ | 1.02 EUR |
| 75+ | 0.96 EUR |
| 500+ | 0.93 EUR |
| DMNH45M7SCT |
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 155A; Idm: 200A; 96W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 155A
Pulsed drain current: 200A
Power dissipation: 96W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 36.1nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 155A; Idm: 200A; 96W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 155A
Pulsed drain current: 200A
Power dissipation: 96W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 36.1nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 64 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.57 EUR |
| 59+ | 1.23 EUR |
| 62+ | 1.16 EUR |
| 500+ | 1.13 EUR |
| DMNH6008SCT |
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Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Pulsed drain current: 200A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Pulsed drain current: 200A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.66 EUR |
| 37+ | 1.96 EUR |
| 54+ | 1.34 EUR |
| 57+ | 1.27 EUR |
| 1000+ | 1.22 EUR |
| DMP1045UFY4-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Type of transistor: P-MOSFET
Mounting: SMD
Case: X2-DFN2015-3
Polarisation: unipolar
Pulsed drain current: -25A
Drain-source voltage: -12V
Drain current: -5.1A
Gate charge: 23.7nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Type of transistor: P-MOSFET
Mounting: SMD
Case: X2-DFN2015-3
Polarisation: unipolar
Pulsed drain current: -25A
Drain-source voltage: -12V
Drain current: -5.1A
Gate charge: 23.7nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2369 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 156+ | 0.46 EUR |
| 195+ | 0.37 EUR |
| 407+ | 0.18 EUR |
| 432+ | 0.17 EUR |
| 3000+ | 0.16 EUR |
| DMP10H400SE-13 |
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Hersteller: DIODES INCORPORATED
DMP10H400SE-13 SMD P channel transistors
DMP10H400SE-13 SMD P channel transistors
auf Bestellung 2611 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 228+ | 0.31 EUR |
| 241+ | 0.3 EUR |
| DMP10H400SK3-13 |
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Hersteller: DIODES INCORPORATED
DMP10H400SK3-13 SMD P channel transistors
DMP10H400SK3-13 SMD P channel transistors
auf Bestellung 2120 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 111+ | 0.64 EUR |
| 265+ | 0.27 EUR |
| 280+ | 0.26 EUR |
| DMP10H4D2S-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.21A
Power dissipation: 0.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.21A
Power dissipation: 0.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3005 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 219+ | 0.33 EUR |
| 341+ | 0.21 EUR |
| 410+ | 0.17 EUR |
| 834+ | 0.086 EUR |
| 878+ | 0.082 EUR |
| DMP2004K-7 |
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Hersteller: DIODES INCORPORATED
DMP2004K-7 SMD P channel transistors
DMP2004K-7 SMD P channel transistors
auf Bestellung 9000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 211+ | 0.34 EUR |
| 1303+ | 0.055 EUR |
| 1378+ | 0.052 EUR |
| 9000+ | 0.051 EUR |
| DMP2022LSS-13 |
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Hersteller: DIODES INCORPORATED
DMP2022LSS-13 SMD P channel transistors
DMP2022LSS-13 SMD P channel transistors
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.51 EUR |
| 48+ | 1.49 EUR |
| 132+ | 0.54 EUR |
| 5000+ | 0.32 EUR |
| DMP2035U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Polarisation: unipolar
Version: ESD
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain current: -2.9A
Drain-source voltage: -20V
On-state resistance: 62mΩ
Power dissipation: 0.81W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Polarisation: unipolar
Version: ESD
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain current: -2.9A
Drain-source voltage: -20V
On-state resistance: 62mΩ
Power dissipation: 0.81W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3069 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 218+ | 0.33 EUR |
| 379+ | 0.19 EUR |
| 848+ | 0.084 EUR |
| 893+ | 0.08 EUR |
| DMP2035UVT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Polarisation: unipolar
Version: ESD
Case: TSOT26
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain current: -4.8A
Drain-source voltage: -20V
On-state resistance: 62mΩ
Power dissipation: 1.2W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Polarisation: unipolar
Version: ESD
Case: TSOT26
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain current: -4.8A
Drain-source voltage: -20V
On-state resistance: 62mΩ
Power dissipation: 1.2W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3756 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 148+ | 0.49 EUR |
| 171+ | 0.42 EUR |
| 286+ | 0.25 EUR |
| 459+ | 0.16 EUR |
| 486+ | 0.15 EUR |
| DMP2040USS-13 |
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Hersteller: DIODES INCORPORATED
DMP2040USS-13 SMD P channel transistors
DMP2040USS-13 SMD P channel transistors
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 89+ | 0.8 EUR |
| 455+ | 0.16 EUR |
| 481+ | 0.15 EUR |
| DMP2045U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1223 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 350+ | 0.2 EUR |
| 419+ | 0.17 EUR |
| 454+ | 0.16 EUR |
| 827+ | 0.087 EUR |
| 875+ | 0.082 EUR |
| 6000+ | 0.08 EUR |
| DMP2100UFU-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET x2
Drain-source voltage: -20V
Drain current: -4.1A
On-state resistance: 75mΩ
Power dissipation: 0.9W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: U-DFN2030-6
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET x2
Drain-source voltage: -20V
Drain current: -4.1A
On-state resistance: 75mΩ
Power dissipation: 0.9W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: U-DFN2030-6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2480 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 363+ | 0.2 EUR |
| 382+ | 0.19 EUR |
| 3000+ | 0.18 EUR |
| DMP2100UQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23; ESD
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23; ESD
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2255 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 261+ | 0.27 EUR |
| 327+ | 0.22 EUR |
| 447+ | 0.16 EUR |
| 715+ | 0.1 EUR |
| 758+ | 0.094 EUR |
| 6000+ | 0.092 EUR |
| DMP2104LP-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
Power dissipation: 0.5W
Case: DFN1411-3
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
Power dissipation: 0.5W
Case: DFN1411-3
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1458 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 167+ | 0.43 EUR |
| 234+ | 0.31 EUR |
| 382+ | 0.19 EUR |
| 404+ | 0.18 EUR |
| DMP2120U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23
Type of transistor: P-MOSFET
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 62mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23
Type of transistor: P-MOSFET
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 62mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1772 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 258+ | 0.28 EUR |
| 307+ | 0.23 EUR |
| 538+ | 0.13 EUR |
| 619+ | 0.12 EUR |
| 679+ | 0.11 EUR |
| 816+ | 0.088 EUR |
| DMP2130L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.125Ω
Power dissipation: 1.4W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.125Ω
Power dissipation: 1.4W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 155+ | 0.46 EUR |
| 180+ | 0.4 EUR |
| 315+ | 0.23 EUR |
| 758+ | 0.094 EUR |
| 807+ | 0.089 EUR |
| DMP2160UFDB-7 |
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Hersteller: DIODES INCORPORATED
DMP2160UFDB-7 SMD P channel transistors
DMP2160UFDB-7 SMD P channel transistors
auf Bestellung 2977 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 368+ | 0.19 EUR |
| 388+ | 0.18 EUR |
| DMP21D6UFD-7 |
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Hersteller: DIODES INCORPORATED
DMP21D6UFD-7 SMD P channel transistors
DMP21D6UFD-7 SMD P channel transistors
auf Bestellung 2760 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 235+ | 0.31 EUR |
| 1137+ | 0.063 EUR |
| 1202+ | 0.059 EUR |
| 9000+ | 0.057 EUR |
| DMP2240UDM-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26
Case: SOT26
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.6W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26
Case: SOT26
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.6W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6852 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 253+ | 0.28 EUR |
| 300+ | 0.24 EUR |
| 332+ | 0.22 EUR |
| DMP2240UW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 0.25W; SOT323
Case: SOT323
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Pulsed drain current: -5A
Drain current: -1A
On-state resistance: 0.15Ω
Power dissipation: 0.25W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 0.25W; SOT323
Case: SOT323
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Pulsed drain current: -5A
Drain current: -1A
On-state resistance: 0.15Ω
Power dissipation: 0.25W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 437 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 191+ | 0.37 EUR |
| 281+ | 0.25 EUR |
| 325+ | 0.22 EUR |
| 437+ | 0.16 EUR |
| 556+ | 0.13 EUR |
| DMP2240UWQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 250mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.25W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: -5A
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 250mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.25W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: -5A
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2950 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 159+ | 0.45 EUR |
| 191+ | 0.38 EUR |
| 234+ | 0.31 EUR |
| 451+ | 0.16 EUR |
| 477+ | 0.15 EUR |
| DMP2305U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.2A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.2A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.2A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.2A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3015 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 353+ | 0.2 EUR |
| 468+ | 0.15 EUR |
| 530+ | 0.13 EUR |
| 898+ | 0.08 EUR |
| 949+ | 0.075 EUR |
| 3000+ | 0.072 EUR |















