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DMN2056U-7 DMN2056U-7 DIODES INCORPORATED DMN2056U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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ZTL431BFTA ZTL431BFTA DIODES INCORPORATED ZTL431,432.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
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SMAJ24CA-13-F SMAJ24CA-13-F DIODES INCORPORATED SMAJ5.0CA-SMAJ200CA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ24CAQ-13-F SMAJ24CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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LM4041CFTA LM4041CFTA DIODES INCORPORATED LM4041.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.225V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 1.225V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 12mA
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LM4041DADJFTA LM4041DADJFTA DIODES INCORPORATED LM4041.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; SOT23; reel,tape; 12mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 1.24...10V
Kind of package: reel; tape
Maximum output current: 12mA
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LM4041DFTA LM4041DFTA DIODES INCORPORATED LM4041.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.225V; ±1%; SOT23; reel,tape; 12mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.225V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 12mA
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LM4041CH5TA DIODES INCORPORATED Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.225V; ±0.5%; SC70-5; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 1.225V
Tolerance: ±0.5%
Mounting: SMD
Case: SC70-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 12mA
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BCX51TA BCX51TA DIODES INCORPORATED BCX51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
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BCX5116TA BCX5116TA DIODES INCORPORATED BCX51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
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BCX5110TA BCX5110TA DIODES INCORPORATED BCX51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
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DMMT3904W-7-F DMMT3904W-7-F DIODES INCORPORATED DMMT3904W.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
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MMST3904-7-F MMST3904-7-F DIODES INCORPORATED MMST3904.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
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1N5406G-T DIODES INCORPORATED ds29003.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Reverse recovery time: 2µs
Features of semiconductor devices: glass passivated
Capacitance: 40pF
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B540CQ-13-F B540CQ-13-F DIODES INCORPORATED B520C-B560C.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Kind of package: reel; tape
Capacitance: 0.3nF
Reverse recovery time: 16ns
Max. forward impulse current: 100A
Application: automotive industry
Leakage current: 20mA
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74LVC540AT20-13 74LVC540AT20-13 DIODES INCORPORATED 74LVC540A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; LVC
Manufacturer series: LVC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Type of integrated circuit: digital
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Supply voltage: 1.65...3.6V DC
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74LVC240AT20-13 74LVC240AT20-13 DIODES INCORPORATED 74LVC240A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...3.6V DC
Quiescent current: 40µA
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SMAJ58A-13-F SMAJ58A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ58AQ-13-F SMAJ58AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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ZXT1053AKQTC DIODES INCORPORATED ZXT1053AK.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Application: automotive industry
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ZXT1053AKTC DIODES INCORPORATED ZXT1053AK.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 5A; 2.1W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 5A
Power dissipation: 2.1W
Case: TO252
Current gain: 300...1200
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
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MUR120-T MUR120-T DIODES INCORPORATED ds30178.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 35A; DO41; reel,tape; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 35A
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 25ns
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BC848AW-7-F BC848AW-7-F DIODES INCORPORATED BC846AW-BC848CW.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
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SMBJ33CA-13-F SMBJ33CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ33CAQ-13-F SMBJ33CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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BZT52C5V6-7-F BZT52C5V6-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.6V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C18-7-F BZT52C18-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C15S-7-F BZT52C15S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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BAV199DW-7-F BAV199DW-7-F DIODES INCORPORATED ds30417.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT363; Ufmax: 1.1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series x2
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.1V
Kind of package: reel; tape
Max. forward impulse current: 4A
Max. load current: 0.5A
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BAV199Q-7-F BAV199Q-7-F DIODES INCORPORATED ds30232.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.14A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.14A
Reverse recovery time: 3µs
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Application: automotive industry
Capacitance: 2pF
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BAV199WQ-7 BAV199WQ-7 DIODES INCORPORATED BAV199WQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 1A
Max. forward voltage: 1.25V
Features of semiconductor devices: small signal
Application: automotive industry
Max. off-state voltage: 85V
Load current: 0.16A
Max. load current: 0.5A
Semiconductor structure: double series
Case: SOT323
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 3µs
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BAV199-7-F DIODES INCORPORATED ds30232.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.1V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: small signal
Max. off-state voltage: 85V
Load current: 0.16A
Semiconductor structure: double series
Case: SOT23
Type of diode: switching
Reverse recovery time: 3µs
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BAV199W-7 BAV199W-7 DIODES INCORPORATED BAV199W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.14A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.14A
Reverse recovery time: 3µs
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Max. load current: 0.5A
Capacitance: 2pF
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BAV199T-7-F BAV199T-7-F DIODES INCORPORATED BAV199T.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125Ax2; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A x2
Reverse recovery time: 3µs
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Max. load current: 0.5A
Capacitance: 2pF
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BAV199DWQ-7-F BAV199DWQ-7-F DIODES INCORPORATED BAV199DWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.14A; 3us; SOT363; Ufmax: 1.1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.14A
Reverse recovery time: 3µs
Semiconductor structure: double series x2
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.1V
Kind of package: reel; tape
Max. forward impulse current: 4A
Application: automotive industry
Max. load current: 0.5A
Capacitance: 1.5pF
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BAV199Q-13-F BAV199Q-13-F DIODES INCORPORATED ds30232.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Application: automotive industry
Capacitance: 2pF
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BAV199TQ-7-F DIODES INCORPORATED BAV199TQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125Ax2; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A x2
Reverse recovery time: 3µs
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Application: automotive industry
Max. load current: 0.5A
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SMBJ58AQ-13-F SMBJ58AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMBTA13-7-F MMBTA13-7-F DIODES INCORPORATED MMBTA13-7-F.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Manufacturer standard package: 3000pcs.
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SMBJ15CAQ-13-F SMBJ15CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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GBU408 GBU408 DIODES INCORPORATED GBU4_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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GBU401 GBU401 DIODES INCORPORATED GBU4_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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GBU402 GBU402 DIODES INCORPORATED GBU4_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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BC857A-7-F BC857A-7-F DIODES INCORPORATED bc856_7_8.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
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AP3302K6TR-G1 AP3302K6TR-G1 DIODES INCORPORATED AP3302.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 350mA; Ch: 1; SOT26
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Output current: 0.35A
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Kind of integrated circuit: DC/DC switcher; PWM controller
Number of channels: 1
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1N4448W-7-F 1N4448W-7-F DIODES INCORPORATED 1N4448W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123
Max. forward voltage: 1.25V
Kind of package: reel; tape
Capacitance: 4pF
Max. forward impulse current: 1A
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1N4448HWT-7 1N4448HWT-7 DIODES INCORPORATED 1N4448HWT.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 4ns; SOD523; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Max. forward voltage: 0.62V
Kind of package: reel; tape
Max. load current: 0.25A
Capacitance: 3pF
Max. forward impulse current: 1A
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1N4448HWS-7-F 1N4448HWS-7-F DIODES INCORPORATED 1N4448HWS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.72V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 0.72V
Kind of package: reel; tape
Max. load current: 0.5A
Capacitance: 3.5pF
Max. forward impulse current: 1A
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1N4448HLP-7 1N4448HLP-7 DIODES INCORPORATED ds30590.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; DFN2; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DFN2
Max. forward voltage: 1V
Kind of package: reel; tape
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1N4448HWSQ-7-F 1N4448HWSQ-7-F DIODES INCORPORATED ds30196.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.72V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 0.72V
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Capacitance: 3.5pF
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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ZXMHC6A07T8TA ZXMHC6A07T8TA DIODES INCORPORATED ZXMHC6A07T8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.4/-1.2A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
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PAM8965ZLA40-13 DIODES INCORPORATED PAM8965.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 12W; stereo; Ch: 2; Amp.class: D; TQFN40
Operating temperature: -40...125°C
Voltage supply range: 2.8...8.5V DC
Amplifier class: D
Kind of package: reel; tape
Case: TQFN40
Number of channels: 2
Mounting: SMD
Output power: 12W
Type of integrated circuit: audio amplifier
Integrated circuit features: stereo
Produkt ist nicht verfügbar
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BCR421UW6Q-7 BCR421UW6Q-7 DIODES INCORPORATED BCR421UW6Q.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Operating temperature: -55...150°C
Output current: 10...350mA
Number of channels: 1
Operating voltage: 1.4...40V DC
Kind of integrated circuit: current regulator; LED driver
Application: automotive industry
Topology: single transistor
Type of integrated circuit: driver
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AP22653QW6-7 AP22653QW6-7 DIODES INCORPORATED AP22653Q.pdf Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 1.5A; Ch: 1; SMD; SOT26; reel,tape
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Output current: 1.5A
Type of integrated circuit: power switch
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SOT26
Kind of integrated circuit: USB switch
Number of channels: 1
On-state resistance: 135mΩ
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ZXMP6A17E6TA ZXMP6A17E6TA DIODES INCORPORATED ZXMP6A17E6.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.4A; 1.1W; SOT26
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.1W
Polarisation: unipolar
Drain current: -2.4A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
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MMBTA06-7-F MMBTA06-7-F DIODES INCORPORATED MMBTA05_06.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
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BCP5116TA BCP5116TA DIODES INCORPORATED BCP51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Frequency: 150MHz
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BCP51TA BCP51TA DIODES INCORPORATED BCP51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Frequency: 150MHz
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BCP5110TA BCP5110TA DIODES INCORPORATED BCP51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Frequency: 150MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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SMAJ58CA-13-F SMAJ58CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMN2056U-7 DMN2056U.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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ZTL431BFTA ZTL431,432.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
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SMAJ24CA-13-F SMAJ5.0CA-SMAJ200CA.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ24CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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LM4041CFTA LM4041.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.225V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 1.225V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 12mA
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LM4041DADJFTA LM4041.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; SOT23; reel,tape; 12mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 1.24...10V
Kind of package: reel; tape
Maximum output current: 12mA
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LM4041DFTA LM4041.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.225V; ±1%; SOT23; reel,tape; 12mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.225V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 12mA
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LM4041CH5TA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.225V; ±0.5%; SC70-5; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 1.225V
Tolerance: ±0.5%
Mounting: SMD
Case: SC70-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 12mA
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BCX51TA BCX51_52_53.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
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BCX5116TA BCX51_52_53.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
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BCX5110TA BCX51_52_53.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
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DMMT3904W-7-F DMMT3904W.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
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MMST3904-7-F MMST3904.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
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1N5406G-T ds29003.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Reverse recovery time: 2µs
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 1200 Stücke
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B540CQ-13-F B520C-B560C.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Kind of package: reel; tape
Capacitance: 0.3nF
Reverse recovery time: 16ns
Max. forward impulse current: 100A
Application: automotive industry
Leakage current: 20mA
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74LVC540AT20-13 74LVC540A.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; LVC
Manufacturer series: LVC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Type of integrated circuit: digital
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Supply voltage: 1.65...3.6V DC
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74LVC240AT20-13 74LVC240A.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...3.6V DC
Quiescent current: 40µA
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SMAJ58A-13-F SMAJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ58AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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ZXT1053AKQTC ZXT1053AK.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
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ZXT1053AKTC ZXT1053AK.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 5A; 2.1W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 5A
Power dissipation: 2.1W
Case: TO252
Current gain: 300...1200
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
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MUR120-T ds30178.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 35A; DO41; reel,tape; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 35A
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
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BC848AW-7-F BC846AW-BC848CW.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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SMBJ33CA-13-F SMBJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ33CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C5V6-7-F BZT52Cxx_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.6V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C18-7-F BZT52Cxx_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C15S-7-F BZT52CxxS_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAV199DW-7-F ds30417.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT363; Ufmax: 1.1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series x2
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.1V
Kind of package: reel; tape
Max. forward impulse current: 4A
Max. load current: 0.5A
Produkt ist nicht verfügbar
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BAV199Q-7-F ds30232.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.14A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.14A
Reverse recovery time: 3µs
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Application: automotive industry
Capacitance: 2pF
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BAV199WQ-7 BAV199WQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 1A
Max. forward voltage: 1.25V
Features of semiconductor devices: small signal
Application: automotive industry
Max. off-state voltage: 85V
Load current: 0.16A
Max. load current: 0.5A
Semiconductor structure: double series
Case: SOT323
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 3µs
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BAV199-7-F ds30232.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.1V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: small signal
Max. off-state voltage: 85V
Load current: 0.16A
Semiconductor structure: double series
Case: SOT23
Type of diode: switching
Reverse recovery time: 3µs
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BAV199W-7 BAV199W.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.14A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.14A
Reverse recovery time: 3µs
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Max. load current: 0.5A
Capacitance: 2pF
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BAV199T-7-F BAV199T.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125Ax2; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A x2
Reverse recovery time: 3µs
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Max. load current: 0.5A
Capacitance: 2pF
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BAV199DWQ-7-F BAV199DWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.14A; 3us; SOT363; Ufmax: 1.1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.14A
Reverse recovery time: 3µs
Semiconductor structure: double series x2
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.1V
Kind of package: reel; tape
Max. forward impulse current: 4A
Application: automotive industry
Max. load current: 0.5A
Capacitance: 1.5pF
Produkt ist nicht verfügbar
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BAV199Q-13-F ds30232.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Application: automotive industry
Capacitance: 2pF
Produkt ist nicht verfügbar
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BAV199TQ-7-F BAV199TQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125Ax2; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A x2
Reverse recovery time: 3µs
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Application: automotive industry
Max. load current: 0.5A
Produkt ist nicht verfügbar
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SMBJ58AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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MMBTA13-7-F MMBTA13-7-F.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Manufacturer standard package: 3000pcs.
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SMBJ15CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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GBU408 GBU4_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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GBU401 GBU4_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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GBU402 GBU4_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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BC857A-7-F bc856_7_8.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
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AP3302K6TR-G1 AP3302.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 350mA; Ch: 1; SOT26
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Output current: 0.35A
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Kind of integrated circuit: DC/DC switcher; PWM controller
Number of channels: 1
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1N4448W-7-F 1N4448W.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123
Max. forward voltage: 1.25V
Kind of package: reel; tape
Capacitance: 4pF
Max. forward impulse current: 1A
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1N4448HWT-7 1N4448HWT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 4ns; SOD523; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Max. forward voltage: 0.62V
Kind of package: reel; tape
Max. load current: 0.25A
Capacitance: 3pF
Max. forward impulse current: 1A
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1N4448HWS-7-F 1N4448HWS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.72V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 0.72V
Kind of package: reel; tape
Max. load current: 0.5A
Capacitance: 3.5pF
Max. forward impulse current: 1A
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1N4448HLP-7 ds30590.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; DFN2; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DFN2
Max. forward voltage: 1V
Kind of package: reel; tape
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1N4448HWSQ-7-F ds30196.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.72V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 0.72V
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Capacitance: 3.5pF
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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ZXMHC6A07T8TA ZXMHC6A07T8.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.4/-1.2A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Produkt ist nicht verfügbar
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PAM8965ZLA40-13 PAM8965.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 12W; stereo; Ch: 2; Amp.class: D; TQFN40
Operating temperature: -40...125°C
Voltage supply range: 2.8...8.5V DC
Amplifier class: D
Kind of package: reel; tape
Case: TQFN40
Number of channels: 2
Mounting: SMD
Output power: 12W
Type of integrated circuit: audio amplifier
Integrated circuit features: stereo
Produkt ist nicht verfügbar
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BCR421UW6Q-7 BCR421UW6Q.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Operating temperature: -55...150°C
Output current: 10...350mA
Number of channels: 1
Operating voltage: 1.4...40V DC
Kind of integrated circuit: current regulator; LED driver
Application: automotive industry
Topology: single transistor
Type of integrated circuit: driver
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AP22653QW6-7 AP22653Q.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 1.5A; Ch: 1; SMD; SOT26; reel,tape
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Output current: 1.5A
Type of integrated circuit: power switch
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SOT26
Kind of integrated circuit: USB switch
Number of channels: 1
On-state resistance: 135mΩ
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ZXMP6A17E6TA ZXMP6A17E6.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.4A; 1.1W; SOT26
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.1W
Polarisation: unipolar
Drain current: -2.4A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
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MMBTA06-7-F MMBTA05_06.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
auf Bestellung 10669 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BCP5116TA BCP51_52_53.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Frequency: 150MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCP51TA BCP51_52_53.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Frequency: 150MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCP5110TA BCP51_52_53.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Frequency: 150MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ58CA-13-F SMAJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 6507 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH