Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74820) > Seite 1165 nach 1247
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DMG3402L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 85mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 344 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG3404L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.8A On-state resistance: 35mΩ Power dissipation: 1.33W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 313 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG3406L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 70mΩ Power dissipation: 1.4W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2876 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG3414U-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Power dissipation: 0.78W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1935 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG3415UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 71mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 711 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3420UQ-7 | DIODES INCORPORATED |
DMG3420UQ-7 SMD N channel transistors |
auf Bestellung 2259 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG4511SK4-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 35/-35V Drain current: 7.8/-8.6A Power dissipation: 1.54W Case: TO252-4 Gate-source voltage: ±20V On-state resistance: 0.035/0.045Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Kind of transistor: complementary pair Semiconductor structure: common drain Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2431 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG4800LSD-13 | DIODES INCORPORATED |
DMG4800LSD-13 Multi channel transistors |
auf Bestellung 2496 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG6402LVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: TSOT26 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A On-state resistance: 42mΩ Power dissipation: 1.1W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2306 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG6601LVT-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 3/-2A Power dissipation: 0.54W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 0.065/0.142Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Kind of transistor: complementary pair Anzahl je Verpackung: 1 Stücke |
auf Bestellung 638 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG6602SVT-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 2.8/-3.4A Power dissipation: 1.112W Case: TSOT26 Gate-source voltage: ±20V On-state resistance: 0.06/0.095Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Kind of transistor: complementary pair Anzahl je Verpackung: 1 Stücke |
auf Bestellung 983 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG6602SVTQ-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A Application: automotive industry Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Case: TSOT26 Polarisation: unipolar On-state resistance: 0.06/0.095Ω Power dissipation: 0.84W Drain current: 2.7/-2.4A Gate-source voltage: ±20V Pulsed drain current: 25...-20A Drain-source voltage: 30/-30V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2227 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG6968U-7 | DIODES INCORPORATED |
DMG6968U-7 SMD N channel transistors |
auf Bestellung 5171 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG6968UDM-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.85W Case: SOT26 Mounting: SMD Kind of package: 7 inch reel; tape On-state resistance: 24mΩ Drain current: 5.2A Gate-source voltage: ±12V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2323 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG7430LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8 Kind of package: 7 inch reel; tape Case: PowerDI®3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 15mΩ Power dissipation: 0.9W Drain current: 9.2A Gate-source voltage: ±20V Drain-source voltage: 30V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 323 Stücke: Lieferzeit 7-14 Tag (e) |
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DMHC3025LSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 11.7/11.4nC On-state resistance: 25/50mΩ Power dissipation: 1.5W Drain current: 6/-4.2A Gate-source voltage: ±20V Drain-source voltage: 30/-30V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Case: SO8 Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 492 Stücke: Lieferzeit 7-14 Tag (e) |
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DMMT3904W-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363 Kind of package: reel; tape Quantity in set/package: 3000pcs. Case: SOT363 Collector current: 0.2A Power dissipation: 0.2W Current gain: 30...300 Collector-emitter voltage: 40V Frequency: 300MHz Polarisation: bipolar Mounting: SMD Type of transistor: NPN x2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2959 Stücke: Lieferzeit 7-14 Tag (e) |
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DMMT5401-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 150V; 0.2A; 300mW; SOT26 Mounting: SMD Kind of package: reel; tape Case: SOT26 Type of transistor: PNP x2 Collector current: 0.2A Power dissipation: 0.3W Quantity in set/package: 3000pcs. Current gain: 30...250 Collector-emitter voltage: 150V Frequency: 100...300MHz Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2930 Stücke: Lieferzeit 7-14 Tag (e) |
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DMMT5551-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.2A Case: SOT26 Current gain: 50...250 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Power dissipation: 0.3W Quantity in set/package: 3000pcs. Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2341 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN1004UFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD Case: PowerDI®3333-8 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 5.1mΩ Power dissipation: 0.9W Gate-source voltage: ±8V Drain-source voltage: 12V Drain current: 55A Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 836 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN1025UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W Mounting: SMD Type of transistor: N-MOSFET x2 Case: U-DFN2020-6 Polarisation: unipolar Gate charge: 23.1nC On-state resistance: 38mΩ Power dissipation: 1.7W Drain current: 5.5A Gate-source voltage: ±10V Drain-source voltage: 12V Pulsed drain current: 35A Kind of package: 7 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2533 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN10H220L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 0.22Ω Drain current: 1.3A Power dissipation: 1.3W Pulsed drain current: 8A Gate-source voltage: ±16V Drain-source voltage: 100V Kind of package: 7 inch reel; tape Case: SOT23 Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2532 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN10H220LK3-13 | DIODES INCORPORATED |
DMN10H220LK3-13 SMD N channel transistors |
auf Bestellung 1367 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN10H220LQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 0.25Ω Drain current: 1.3A Power dissipation: 1.3W Gate-source voltage: ±16V Drain-source voltage: 100V Kind of package: 7 inch reel; tape Application: automotive industry Case: SOT23 Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1088 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2004K-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.45A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.9Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 205 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN2005LPK-7 | DIODES INCORPORATED |
DMN2005LPK-7 SMD N channel transistors |
auf Bestellung 1124 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN2020LSN-7 | DIODES INCORPORATED |
DMN2020LSN-7 SMD N channel transistors |
auf Bestellung 1316 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2028USS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 7.3A; 12.5W; SO8; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.3A Power dissipation: 12.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 28mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2471 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN2040LTS-13 | DIODES INCORPORATED |
DMN2040LTS-13 SMD N channel transistors |
auf Bestellung 2012 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN2046U-7 | DIODES INCORPORATED |
DMN2046U-7 SMD N channel transistors |
auf Bestellung 1035 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2056U-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.7A Power dissipation: 0.94W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN2058U-7 | DIODES INCORPORATED |
DMN2058U-7 SMD N channel transistors |
auf Bestellung 319 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2230U-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23 Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape On-state resistance: 0.23Ω Power dissipation: 0.6W Drain current: 2A Gate-source voltage: ±12V Drain-source voltage: 20V Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke |
auf Bestellung 790 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2230UQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23 Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape On-state resistance: 0.11Ω Power dissipation: 0.6W Drain current: 2A Gate-source voltage: ±12V Drain-source voltage: 20V Application: automotive industry Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 251 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2400UV-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 0.84A; 0.53W; SOT563; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.84A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±12V On-state resistance: 1.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1063 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN24H11DS-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23 Polarisation: unipolar Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Gate charge: 3.7nC Drain current: 0.22A Pulsed drain current: 0.8A Power dissipation: 1.2W On-state resistance: 12Ω Gate-source voltage: ±20V Drain-source voltage: 240V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2720 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN26D0UT-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 0.23A; 0.3W; SOT523; ESD Type of transistor: N-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: 20V Kind of package: 7 inch reel; tape Drain current: 0.23A Power dissipation: 0.3W On-state resistance: 15Ω Gate-source voltage: ±10V Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3009SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 100A; 3.4W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Pulsed drain current: 100A Power dissipation: 3.4W Case: TO252 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1830 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3018SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.2A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 454 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3023L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Power dissipation: 0.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3137 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3024LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2428 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3024SFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 60A Drain-source voltage: 30V Drain current: 8.5A Gate charge: 10.5nC On-state resistance: 33mΩ Power dissipation: 1.4W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2038 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN3032LE-13 | DIODES INCORPORATED |
DMN3032LE-13 SMD N channel transistors |
auf Bestellung 1141 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3033LDM-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 2W; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Power dissipation: 2W Case: SOT26 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 49 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3033LSN-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 1.4W Case: SC59 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1715 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3042L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 0.72W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1050 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN3053L-7 | DIODES INCORPORATED |
DMN3053L-7 SMD N channel transistors |
auf Bestellung 748 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3065LW-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323 Polarisation: unipolar Case: SOT323 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 85mΩ Power dissipation: 0.77W Drain current: 4A Gate-source voltage: ±12V Drain-source voltage: 30V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 451 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3067LW-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 10A; 0.5W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.1A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 67mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Pulsed drain current: 10A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 718 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN3150L-7 | DIODES INCORPORATED |
DMN3150L-7 SMD N channel transistors |
auf Bestellung 2865 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3190LDW-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.9A Pulsed drain current: 9.6A Power dissipation: 0.32W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 413 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN3200U-7 | DIODES INCORPORATED |
DMN3200U-7 SMD N channel transistors |
auf Bestellung 1445 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN32D2LDF-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.4A Power dissipation: 0.28W Case: SOT353 Gate-source voltage: ±10V On-state resistance: 2.2Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Semiconductor structure: common source Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1647 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN3404L-7 | DIODES INCORPORATED |
DMN3404L-7 SMD N channel transistors |
auf Bestellung 8049 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN3730U-7 | DIODES INCORPORATED |
DMN3730U-7 SMD N channel transistors |
auf Bestellung 1404 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN53D0L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23; ESD Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A On-state resistance: 2.5Ω Version: ESD Power dissipation: 0.37W Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 394 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN53D0LDW-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.25A Power dissipation: 0.31W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 895 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN53D0LQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23; ESD Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A On-state resistance: 2.5Ω Version: ESD Power dissipation: 0.37W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN601K-7 | DIODES INCORPORATED |
DMN601K-7 SMD N channel transistors |
auf Bestellung 425 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN6040SFDE-7 | DIODES INCORPORATED |
DMN6040SFDE-7 SMD N channel transistors |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3402L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 344 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 298+ | 0.24 EUR |
| 334+ | 0.21 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.11 EUR |
| DMG3404L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 35mΩ
Power dissipation: 1.33W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 35mΩ
Power dissipation: 1.33W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 313 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 227+ | 0.32 EUR |
| 280+ | 0.26 EUR |
| 313+ | 0.23 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.1 EUR |
| DMG3406L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Power dissipation: 1.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Power dissipation: 1.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2876 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 295+ | 0.24 EUR |
| 460+ | 0.16 EUR |
| 552+ | 0.13 EUR |
| 783+ | 0.091 EUR |
| 1000+ | 0.081 EUR |
| 1500+ | 0.077 EUR |
| DMG3414U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1935 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 175+ | 0.41 EUR |
| 225+ | 0.32 EUR |
| 327+ | 0.22 EUR |
| 355+ | 0.2 EUR |
| 500+ | 0.17 EUR |
| 750+ | 0.16 EUR |
| DMG3415UQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 711 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 142+ | 0.51 EUR |
| 161+ | 0.45 EUR |
| 257+ | 0.28 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.15 EUR |
| DMG3420UQ-7 |
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Hersteller: DIODES INCORPORATED
DMG3420UQ-7 SMD N channel transistors
DMG3420UQ-7 SMD N channel transistors
auf Bestellung 2259 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 160+ | 0.45 EUR |
| 676+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| 9000+ | 0.097 EUR |
| DMG4511SK4-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 35/-35V
Drain current: 7.8/-8.6A
Power dissipation: 1.54W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 0.035/0.045Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Semiconductor structure: common drain
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 35/-35V
Drain current: 7.8/-8.6A
Power dissipation: 1.54W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 0.035/0.045Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Semiconductor structure: common drain
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2431 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.3 EUR |
| 88+ | 0.82 EUR |
| 157+ | 0.46 EUR |
| 166+ | 0.43 EUR |
| 500+ | 0.42 EUR |
| DMG4800LSD-13 |
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Hersteller: DIODES INCORPORATED
DMG4800LSD-13 Multi channel transistors
DMG4800LSD-13 Multi channel transistors
auf Bestellung 2496 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 73+ | 0.98 EUR |
| 323+ | 0.22 EUR |
| 341+ | 0.21 EUR |
| 12500+ | 0.2 EUR |
| DMG6402LVT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: TSOT26
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: TSOT26
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2306 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 199+ | 0.36 EUR |
| 233+ | 0.31 EUR |
| 313+ | 0.23 EUR |
| 511+ | 0.14 EUR |
| 782+ | 0.092 EUR |
| DMG6601LVT-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Power dissipation: 0.54W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.065/0.142Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Power dissipation: 0.54W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.065/0.142Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
auf Bestellung 638 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 204+ | 0.35 EUR |
| 235+ | 0.3 EUR |
| 360+ | 0.2 EUR |
| 432+ | 0.17 EUR |
| 625+ | 0.11 EUR |
| 1000+ | 0.1 EUR |
| DMG6602SVT-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.8/-3.4A
Power dissipation: 1.112W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.06/0.095Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.8/-3.4A
Power dissipation: 1.112W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.06/0.095Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
auf Bestellung 983 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 246+ | 0.29 EUR |
| 382+ | 0.19 EUR |
| 463+ | 0.15 EUR |
| 685+ | 0.1 EUR |
| 1000+ | 0.094 EUR |
| DMG6602SVTQ-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: TSOT26
Polarisation: unipolar
On-state resistance: 0.06/0.095Ω
Power dissipation: 0.84W
Drain current: 2.7/-2.4A
Gate-source voltage: ±20V
Pulsed drain current: 25...-20A
Drain-source voltage: 30/-30V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: TSOT26
Polarisation: unipolar
On-state resistance: 0.06/0.095Ω
Power dissipation: 0.84W
Drain current: 2.7/-2.4A
Gate-source voltage: ±20V
Pulsed drain current: 25...-20A
Drain-source voltage: 30/-30V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2227 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 226+ | 0.32 EUR |
| 317+ | 0.23 EUR |
| 365+ | 0.2 EUR |
| 506+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| DMG6968U-7 |
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Hersteller: DIODES INCORPORATED
DMG6968U-7 SMD N channel transistors
DMG6968U-7 SMD N channel transistors
auf Bestellung 5171 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 705+ | 0.1 EUR |
| 747+ | 0.096 EUR |
| DMG6968UDM-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.85W
Case: SOT26
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 24mΩ
Drain current: 5.2A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.85W
Case: SOT26
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 24mΩ
Drain current: 5.2A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2323 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 146+ | 0.49 EUR |
| 161+ | 0.45 EUR |
| 241+ | 0.3 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.2 EUR |
| DMG7430LFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 15mΩ
Power dissipation: 0.9W
Drain current: 9.2A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 15mΩ
Power dissipation: 0.9W
Drain current: 9.2A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 323 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 266+ | 0.27 EUR |
| 304+ | 0.24 EUR |
| 323+ | 0.21 EUR |
| DMHC3025LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 11.7/11.4nC
On-state resistance: 25/50mΩ
Power dissipation: 1.5W
Drain current: 6/-4.2A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Case: SO8
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 11.7/11.4nC
On-state resistance: 25/50mΩ
Power dissipation: 1.5W
Drain current: 6/-4.2A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Case: SO8
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 492 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 80+ | 0.89 EUR |
| 108+ | 0.66 EUR |
| 123+ | 0.58 EUR |
| 250+ | 0.49 EUR |
| 500+ | 0.46 EUR |
| DMMT3904W-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT363
Collector current: 0.2A
Power dissipation: 0.2W
Current gain: 30...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN x2
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Case: SOT363
Collector current: 0.2A
Power dissipation: 0.2W
Current gain: 30...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2959 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 258+ | 0.28 EUR |
| 374+ | 0.19 EUR |
| 443+ | 0.16 EUR |
| 633+ | 0.11 EUR |
| 1000+ | 0.1 EUR |
| DMMT5401-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 300mW; SOT26
Mounting: SMD
Kind of package: reel; tape
Case: SOT26
Type of transistor: PNP x2
Collector current: 0.2A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Current gain: 30...250
Collector-emitter voltage: 150V
Frequency: 100...300MHz
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 300mW; SOT26
Mounting: SMD
Kind of package: reel; tape
Case: SOT26
Type of transistor: PNP x2
Collector current: 0.2A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Current gain: 30...250
Collector-emitter voltage: 150V
Frequency: 100...300MHz
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2930 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 236+ | 0.3 EUR |
| 336+ | 0.21 EUR |
| 391+ | 0.18 EUR |
| 556+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| DMMT5551-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Case: SOT26
Current gain: 50...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Case: SOT26
Current gain: 50...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2341 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 214+ | 0.33 EUR |
| 311+ | 0.23 EUR |
| 368+ | 0.19 EUR |
| 521+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 1500+ | 0.11 EUR |
| DMN1004UFV-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD
Case: PowerDI®3333-8
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 5.1mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Drain-source voltage: 12V
Drain current: 55A
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD
Case: PowerDI®3333-8
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 5.1mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Drain-source voltage: 12V
Drain current: 55A
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 836 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 99+ | 0.73 EUR |
| 112+ | 0.64 EUR |
| 152+ | 0.47 EUR |
| 242+ | 0.3 EUR |
| 257+ | 0.28 EUR |
| 1000+ | 0.27 EUR |
| DMN1025UFDB-7 |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: U-DFN2020-6
Polarisation: unipolar
Gate charge: 23.1nC
On-state resistance: 38mΩ
Power dissipation: 1.7W
Drain current: 5.5A
Gate-source voltage: ±10V
Drain-source voltage: 12V
Pulsed drain current: 35A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: U-DFN2020-6
Polarisation: unipolar
Gate charge: 23.1nC
On-state resistance: 38mΩ
Power dissipation: 1.7W
Drain current: 5.5A
Gate-source voltage: ±10V
Drain-source voltage: 12V
Pulsed drain current: 35A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2533 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 309+ | 0.23 EUR |
| 374+ | 0.19 EUR |
| 414+ | 0.17 EUR |
| 550+ | 0.13 EUR |
| DMN10H220L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.22Ω
Drain current: 1.3A
Power dissipation: 1.3W
Pulsed drain current: 8A
Gate-source voltage: ±16V
Drain-source voltage: 100V
Kind of package: 7 inch reel; tape
Case: SOT23
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.22Ω
Drain current: 1.3A
Power dissipation: 1.3W
Pulsed drain current: 8A
Gate-source voltage: ±16V
Drain-source voltage: 100V
Kind of package: 7 inch reel; tape
Case: SOT23
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2532 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 242+ | 0.3 EUR |
| 281+ | 0.25 EUR |
| 304+ | 0.24 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.18 EUR |
| 1500+ | 0.17 EUR |
| DMN10H220LK3-13 |
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Hersteller: DIODES INCORPORATED
DMN10H220LK3-13 SMD N channel transistors
DMN10H220LK3-13 SMD N channel transistors
auf Bestellung 1367 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 343+ | 0.21 EUR |
| 363+ | 0.2 EUR |
| 5000+ | 0.19 EUR |
| DMN10H220LQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 1.3A
Power dissipation: 1.3W
Gate-source voltage: ±16V
Drain-source voltage: 100V
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: SOT23
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 1.3A
Power dissipation: 1.3W
Gate-source voltage: ±16V
Drain-source voltage: 100V
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: SOT23
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1088 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 220+ | 0.33 EUR |
| 256+ | 0.28 EUR |
| 477+ | 0.15 EUR |
| 695+ | 0.1 EUR |
| 1000+ | 0.097 EUR |
| DMN2004K-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 205+ | 0.34 EUR |
| 3000+ | 0.096 EUR |
| 6000+ | 0.085 EUR |
| DMN2005LPK-7 |
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Hersteller: DIODES INCORPORATED
DMN2005LPK-7 SMD N channel transistors
DMN2005LPK-7 SMD N channel transistors
auf Bestellung 1124 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 596+ | 0.12 EUR |
| 926+ | 0.077 EUR |
| 981+ | 0.073 EUR |
| DMN2020LSN-7 |
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Hersteller: DIODES INCORPORATED
DMN2020LSN-7 SMD N channel transistors
DMN2020LSN-7 SMD N channel transistors
auf Bestellung 1316 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 128+ | 0.56 EUR |
| 550+ | 0.13 EUR |
| 582+ | 0.12 EUR |
| DMN2028USS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.3A; 12.5W; SO8; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.3A
Power dissipation: 12.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.3A; 12.5W; SO8; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.3A
Power dissipation: 12.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2471 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 133+ | 0.54 EUR |
| 166+ | 0.43 EUR |
| 253+ | 0.28 EUR |
| 268+ | 0.27 EUR |
| 2500+ | 0.26 EUR |
| DMN2040LTS-13 |
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Hersteller: DIODES INCORPORATED
DMN2040LTS-13 SMD N channel transistors
DMN2040LTS-13 SMD N channel transistors
auf Bestellung 2012 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 83+ | 0.86 EUR |
| 321+ | 0.22 EUR |
| 341+ | 0.21 EUR |
| 5000+ | 0.2 EUR |
| DMN2046U-7 |
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Hersteller: DIODES INCORPORATED
DMN2046U-7 SMD N channel transistors
DMN2046U-7 SMD N channel transistors
auf Bestellung 1035 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 182+ | 0.39 EUR |
| 1035+ | 0.069 EUR |
| 9000+ | 0.062 EUR |
| DMN2056U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.25 EUR |
| 50+ | 1.43 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.14 EUR |
| DMN2058U-7 |
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Hersteller: DIODES INCORPORATED
DMN2058U-7 SMD N channel transistors
DMN2058U-7 SMD N channel transistors
auf Bestellung 319 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 147+ | 0.49 EUR |
| 319+ | 0.23 EUR |
| 444+ | 0.16 EUR |
| 6000+ | 0.096 EUR |
| DMN2230U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.23Ω
Power dissipation: 0.6W
Drain current: 2A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.23Ω
Power dissipation: 0.6W
Drain current: 2A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 790 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 350+ | 0.21 EUR |
| 435+ | 0.17 EUR |
| 490+ | 0.15 EUR |
| 520+ | 0.14 EUR |
| DMN2230UQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.11Ω
Power dissipation: 0.6W
Drain current: 2A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.11Ω
Power dissipation: 0.6W
Drain current: 2A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 251 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 172+ | 0.42 EUR |
| 247+ | 0.29 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.13 EUR |
| DMN2400UV-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.84A; 0.53W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.84A
Power dissipation: 0.53W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.84A; 0.53W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.84A
Power dissipation: 0.53W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1063 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 215+ | 0.33 EUR |
| 311+ | 0.23 EUR |
| 365+ | 0.2 EUR |
| 511+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.1 EUR |
| DMN24H11DS-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 3.7nC
Drain current: 0.22A
Pulsed drain current: 0.8A
Power dissipation: 1.2W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 240V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 3.7nC
Drain current: 0.22A
Pulsed drain current: 0.8A
Power dissipation: 1.2W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 240V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2720 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 159+ | 0.45 EUR |
| 174+ | 0.41 EUR |
| 205+ | 0.35 EUR |
| 397+ | 0.18 EUR |
| 421+ | 0.17 EUR |
| 3000+ | 0.16 EUR |
| DMN26D0UT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.23A; 0.3W; SOT523; ESD
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.23A
Power dissipation: 0.3W
On-state resistance: 15Ω
Gate-source voltage: ±10V
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.23A; 0.3W; SOT523; ESD
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.23A
Power dissipation: 0.3W
On-state resistance: 15Ω
Gate-source voltage: ±10V
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 150+ | 0.47 EUR |
| 342+ | 0.21 EUR |
| 940+ | 0.076 EUR |
| 3000+ | 0.045 EUR |
| DMN3009SK3-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 100A; 3.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 3.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 100A; 3.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 3.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1830 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 131+ | 0.55 EUR |
| 191+ | 0.37 EUR |
| 500+ | 0.29 EUR |
| DMN3018SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.2A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.2A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 454 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 142+ | 0.51 EUR |
| 214+ | 0.33 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.24 EUR |
| DMN3023L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3137 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 180+ | 0.4 EUR |
| 224+ | 0.32 EUR |
| 358+ | 0.2 EUR |
| 424+ | 0.17 EUR |
| 550+ | 0.13 EUR |
| 582+ | 0.12 EUR |
| DMN3024LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2428 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 118+ | 0.61 EUR |
| 211+ | 0.34 EUR |
| 250+ | 0.29 EUR |
| DMN3024SFG-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 8.5A
Gate charge: 10.5nC
On-state resistance: 33mΩ
Power dissipation: 1.4W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 8.5A
Gate charge: 10.5nC
On-state resistance: 33mΩ
Power dissipation: 1.4W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2038 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 174+ | 0.41 EUR |
| 224+ | 0.32 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.22 EUR |
| DMN3032LE-13 |
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Hersteller: DIODES INCORPORATED
DMN3032LE-13 SMD N channel transistors
DMN3032LE-13 SMD N channel transistors
auf Bestellung 1141 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.82 EUR |
| 298+ | 0.24 EUR |
| 315+ | 0.23 EUR |
| 17500+ | 0.22 EUR |
| DMN3033LDM-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 2W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Power dissipation: 2W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 2W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Power dissipation: 2W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 49+ | 1.46 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.21 EUR |
| 3000+ | 0.18 EUR |
| 6000+ | 0.17 EUR |
| DMN3033LSN-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.4W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.4W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1715 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 146+ | 0.49 EUR |
| 168+ | 0.43 EUR |
| 280+ | 0.26 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.18 EUR |
| DMN3042L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1050 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 424+ | 0.17 EUR |
| 500+ | 0.14 EUR |
| 747+ | 0.096 EUR |
| 820+ | 0.087 EUR |
| DMN3053L-7 |
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Hersteller: DIODES INCORPORATED
DMN3053L-7 SMD N channel transistors
DMN3053L-7 SMD N channel transistors
auf Bestellung 748 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 468+ | 0.15 EUR |
| 496+ | 0.14 EUR |
| DMN3065LW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 451 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 229+ | 0.31 EUR |
| 327+ | 0.22 EUR |
| 382+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 1500+ | 0.11 EUR |
| DMN3067LW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 10A; 0.5W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.1A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 10A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 10A; 0.5W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.1A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 10A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 718 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 268+ | 0.27 EUR |
| 376+ | 0.19 EUR |
| 435+ | 0.16 EUR |
| 596+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 1500+ | 0.1 EUR |
| DMN3150L-7 |
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Hersteller: DIODES INCORPORATED
DMN3150L-7 SMD N channel transistors
DMN3150L-7 SMD N channel transistors
auf Bestellung 2865 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 151+ | 0.47 EUR |
| 685+ | 0.1 EUR |
| 725+ | 0.099 EUR |
| DMN3190LDW-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 9.6A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 9.6A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 413 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 413+ | 0.17 EUR |
| 500+ | 0.14 EUR |
| DMN3200U-7 |
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Hersteller: DIODES INCORPORATED
DMN3200U-7 SMD N channel transistors
DMN3200U-7 SMD N channel transistors
auf Bestellung 1445 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 145+ | 0.49 EUR |
| 459+ | 0.16 EUR |
| 486+ | 0.15 EUR |
| DMN32D2LDF-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Semiconductor structure: common source
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Semiconductor structure: common source
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1647 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 236+ | 0.3 EUR |
| 347+ | 0.21 EUR |
| 412+ | 0.17 EUR |
| 596+ | 0.12 EUR |
| 1000+ | 0.1 EUR |
| 3000+ | 0.086 EUR |
| DMN3404L-7 |
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Hersteller: DIODES INCORPORATED
DMN3404L-7 SMD N channel transistors
DMN3404L-7 SMD N channel transistors
auf Bestellung 8049 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 227+ | 0.32 EUR |
| 1071+ | 0.067 EUR |
| 1132+ | 0.063 EUR |
| 21000+ | 0.062 EUR |
| DMN3730U-7 |
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Hersteller: DIODES INCORPORATED
DMN3730U-7 SMD N channel transistors
DMN3730U-7 SMD N channel transistors
auf Bestellung 1404 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 156+ | 0.46 EUR |
| 596+ | 0.12 EUR |
| 633+ | 0.11 EUR |
| DMN53D0L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23; ESD
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
On-state resistance: 2.5Ω
Version: ESD
Power dissipation: 0.37W
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23; ESD
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
On-state resistance: 2.5Ω
Version: ESD
Power dissipation: 0.37W
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 394 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 374+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.072 EUR |
| DMN53D0LDW-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.25A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.25A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 895 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 596+ | 0.12 EUR |
| 751+ | 0.095 EUR |
| 827+ | 0.087 EUR |
| 895+ | 0.08 EUR |
| 1000+ | 0.072 EUR |
| DMN53D0LQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23; ESD
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
On-state resistance: 2.5Ω
Version: ESD
Power dissipation: 0.37W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23; ESD
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
On-state resistance: 2.5Ω
Version: ESD
Power dissipation: 0.37W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.75 EUR |
| 50+ | 1.43 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.076 EUR |
| 1500+ | 0.069 EUR |
| DMN601K-7 |
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Hersteller: DIODES INCORPORATED
DMN601K-7 SMD N channel transistors
DMN601K-7 SMD N channel transistors
auf Bestellung 425 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 425+ | 0.17 EUR |
| 673+ | 0.11 EUR |
| 1852+ | 0.039 EUR |
| DMN6040SFDE-7 |
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Hersteller: DIODES INCORPORATED
DMN6040SFDE-7 SMD N channel transistors
DMN6040SFDE-7 SMD N channel transistors
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 272+ | 0.26 EUR |
| 286+ | 0.25 EUR |
| 3000+ | 0.24 EUR |


















