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DSS5160T-7 DSS5160T-7 DIODES INCORPORATED DSS5160T.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 725mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 60V
Power dissipation: 725mW
Polarisation: bipolar
Pulsed collector current: 2A
Type of transistor: PNP
Current gain: 100...200
Frequency: 150MHz
Collector current: 1A
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DSS5160FDB-7 DIODES INCORPORATED DSS5160FDB.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2.47W
Case: U-DFN2020-6
Pulsed collector current: 1.5A
Mounting: SMD
Kind of package: reel; tape
Frequency: 65MHz
Manufacturer standard package: 3000pcs.
Current gain: 70...170
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DSS5160V-7 DSS5160V-7 DIODES INCORPORATED ds31670.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 600mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 60V
Power dissipation: 0.6W
Polarisation: bipolar
Pulsed collector current: 2A
Type of transistor: PNP
Current gain: 100...200
Frequency: 150MHz
Collector current: 1A
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DSS5160TQ-7 DSS5160TQ-7 DIODES INCORPORATED DSS5160TQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 725mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 60V
Power dissipation: 725mW
Polarisation: bipolar
Pulsed collector current: 2A
Application: automotive industry
Type of transistor: PNP
Current gain: 100...200
Frequency: 150MHz
Collector current: 1A
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DSS5160U-7 DSS5160U-7 DIODES INCORPORATED ds31685.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 400mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 60V
Power dissipation: 0.4W
Polarisation: bipolar
Pulsed collector current: 2A
Type of transistor: PNP
Current gain: 100...200
Frequency: 150MHz
Collector current: 1A
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DSS45160FDB-7 DIODES INCORPORATED DSS45160FDB.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 2.47W
Case: U-DFN2020-6
Polarisation: bipolar
Kind of transistor: complementary pair
Pulsed collector current: 1.5A
Type of transistor: NPN / PNP
Current gain: 70...430
Kind of package: reel; tape
Frequency: 90...175MHz
Collector current: 1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 60V
Power dissipation: 2.47W
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BAS70-04Q-7-F BAS70-04Q-7-F DIODES INCORPORATED BAS70_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Capacitance: 2pF
Max. forward voltage: 0.41V
Max. forward impulse current: 0.1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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DMT6015LFVW-7 DIODES INCORPORATED DMT6015LFVW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 127A; 2.8W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Pulsed drain current: 127A
Power dissipation: 2.8W
Gate charge: 15.7nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 22mΩ
Mounting: SMD
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2N7002KQ-7 2N7002KQ-7 DIODES INCORPORATED 2N7002K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; 0.37W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
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2N7002K-13 2N7002K-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; 370mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.37W
Case: SOT23
On-state resistance: 2Ω
Mounting: SMD
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SMCJ43CA-13-F SMCJ43CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 21.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 21.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1N4448WQ-7-F 1N4448WQ-7-F DIODES INCORPORATED 1N4448W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 0.72V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123
Max. forward voltage: 0.72V
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Capacitance: 4pF
Max. forward impulse current: 1A
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74AHCT125T14-13 74AHCT125T14-13 DIODES INCORPORATED 74AHCT125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: AHCT
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of package: reel; tape
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74AHCT125S14-13 74AHCT125S14-13 DIODES INCORPORATED 74AHCT125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: AHCT
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of package: reel; tape
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BZX84C15W-7-F BZX84C15W-7-F DIODES INCORPORATED BZX84CxxW_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX84C13-7-F BZX84C13-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 13V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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AS7805ADTR-G1 AS7805ADTR-G1 DIODES INCORPORATED AS78XXA.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; AS78XXA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AS78XXA
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7.5...20V
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AS7805ADTR-E1 AS7805ADTR-E1 DIODES INCORPORATED AS78XXA.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; AS78XXA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AS78XXA
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7.5...20V
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74HC00S14-13 74HC00S14-13 DIODES INCORPORATED 74HC00.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Supply voltage: 2...6V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
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74HC00T14-13 74HC00T14-13 DIODES INCORPORATED 74HC00.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Supply voltage: 2...6V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
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74HCT00T14-13 74HCT00T14-13 DIODES INCORPORATED 74HCT00.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HCT
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS; TTL
Kind of input: with Schmitt trigger
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74HCT00S14-13 74HCT00S14-13 DIODES INCORPORATED 74HCT00.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HCT
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS; TTL
Kind of input: with Schmitt trigger
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BAT54CQ-7-F BAT54CQ-7-F DIODES INCORPORATED BAT54Q_AQ_CQ_SQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Application: automotive industry
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BAT54CDW-7-F BAT54CDW-7-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Max. forward voltage: 1V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Leakage current: 2µA
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BAT54CW-13-F BAT54CW-13-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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1N4448WS-7-F 1N4448WS-7-F DIODES INCORPORATED 1N4448WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Capacitance: 4pF
Max. forward impulse current: 1A
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1N4448WSF-7 1N4448WSF-7 DIODES INCORPORATED 1N4448WSF.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323F; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323F
Max. forward voltage: 0.62V
Kind of package: reel; tape
Max. load current: 0.5A
Capacitance: 4pF
Max. forward impulse current: 1A
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1N4448WSFQ-7 1N4448WSFQ-7 DIODES INCORPORATED 1N4448WSF.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323F; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323F
Max. forward voltage: 0.62V
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Capacitance: 4pF
Max. forward impulse current: 1A
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1N4448WSQ-7-F 1N4448WSQ-7-F DIODES INCORPORATED ds30096.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 0.62V
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Capacitance: 4pF
Max. forward impulse current: 1A
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ADTC114ECAQ-7 ADTC114ECAQ-7 DIODES INCORPORATED ADTC114ECAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 30
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ADTC114ECAQ-13 ADTC114ECAQ-13 DIODES INCORPORATED ADTC114ECAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 10000pcs.
Application: automotive industry
Current gain: 30
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DDTC114ECAQ-7-F DDTC114ECAQ-7-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 35
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DDTC114EE-7-F DIODES INCORPORATED ds30313.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 30
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DDTC114ELP-7 DIODES INCORPORATED ds30945.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 10...100
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DSS5240T-7 DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 730mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Power dissipation: 0.73W
Polarisation: bipolar
Type of transistor: PNP
Frequency: 100MHz
Collector current: 2A
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DSS5220TQ-7 DSS5220TQ-7 DIODES INCORPORATED DSS5220TQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 1.2W; SOT23; automotive industry
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 20V
Power dissipation: 1.2W
Polarisation: bipolar
Pulsed collector current: 3A
Application: automotive industry
Type of transistor: PNP
Current gain: 150...225
Frequency: 100MHz
Collector current: 2A
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DSS5240TQ-7 DSS5240TQ-7 DIODES INCORPORATED DSS5240TQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 730mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Power dissipation: 0.73W
Polarisation: bipolar
Pulsed collector current: 3A
Application: automotive industry
Type of transistor: PNP
Current gain: 100...300
Frequency: 100MHz
Collector current: 2A
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DSS5220T-7 DSS5220T-7 DIODES INCORPORATED DSS5220T.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 1.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 20V
Power dissipation: 1.2W
Polarisation: bipolar
Pulsed collector current: 3A
Type of transistor: PNP
Current gain: 150...225
Frequency: 100MHz
Collector current: 2A
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DSS5220V-7 DSS5220V-7 DIODES INCORPORATED ds31660.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 20V
Power dissipation: 0.6W
Polarisation: bipolar
Pulsed collector current: 4A
Type of transistor: PNP
Current gain: 60...220
Frequency: 150MHz
Collector current: 2A
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DSS5240V-7 DSS5240V-7 DIODES INCORPORATED ds31673.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1.8A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Power dissipation: 0.6W
Polarisation: bipolar
Pulsed collector current: 3A
Type of transistor: PNP
Current gain: 50...800
Frequency: 150MHz
Collector current: 1.8A
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DSS5240Y-7 DSS5240Y-7 DIODES INCORPORATED DSS5240Y.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 650mW; SOT363
Mounting: SMD
Case: SOT363
Collector-emitter voltage: 40V
Power dissipation: 0.65W
Polarisation: bipolar
Type of transistor: PNP
Frequency: 220MHz
Collector current: 2A
Produkt ist nicht verfügbar
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DDTA114EUA-7-F DDTA114EUA-7-F DIODES INCORPORATED DDTAxxxUA.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
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DMP2035UTS-13 DIODES INCORPORATED ds31940.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 3.96A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 22A
Gate charge: 15.4nC
Semiconductor structure: common drain
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MMSZ5240BS-7-F MMSZ5240BS-7-F DIODES INCORPORATED mmsz52xxbs_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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MMSZ5240B-7-F MMSZ5240B-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 10V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
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MMSZ5240BQ-7-F MMSZ5240BQ-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 10V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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DZT2907A-13 DZT2907A-13 DIODES INCORPORATED DZT2907A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.2A; 1W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.2A
Power dissipation: 1W
Case: SOT223
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Manufacturer standard package: 2500pcs.
Produkt ist nicht verfügbar
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DXT2907A-13 DXT2907A-13 DIODES INCORPORATED ds30944.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Manufacturer standard package: 2500pcs.
Pulsed collector current: 0.8A
Produkt ist nicht verfügbar
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SDT20100CT SDT20100CT DIODES INCORPORATED SDT20100CT-SDT20100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 700mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Kind of package: tube
Max. forward impulse current: 150A
Produkt ist nicht verfügbar
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SBR20100CT SBR20100CT DIODES INCORPORATED SBR20100CT%20N0911%20REV.A.pdf SBR20100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; Ifsm: 150A; TO220AB; tube; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 20A
Technology: SBR®
Max. forward impulse current: 150A
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SBR20100CT-G SBR20100CT-G DIODES INCORPORATED SBR20100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; Ifsm: 150A; TO220AB; tube; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 20A
Technology: SBR®
Max. forward impulse current: 150A
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SBR20100CTFP DIODES INCORPORATED SBR20100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; Ifsm: 150A; ITO220AB; tube; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Max. load current: 20A
Technology: SBR®
Max. forward impulse current: 150A
Produkt ist nicht verfügbar
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SMAJ18CA-13-F SMAJ18CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ16A-13-F SMCJ16A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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MMBTA63-7-F MMBTA63-7-F DIODES INCORPORATED ds30055.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 5000...10000
Manufacturer standard package: 3000pcs.
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DZ23C2V7-7-F DZ23C2V7-7-F DIODES INCORPORATED DZ23C2V7-DZ23C51.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; SOT23; double,common cathode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Zener voltage: 2.7V
Type of diode: Zener
Power dissipation: 0.3W
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BZX84C2V7-7-F BZX84C2V7-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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1N6263W-7-F 1N6263W-7-F DIODES INCORPORATED 1N6263W.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 60V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15mA
Semiconductor structure: single diode
Capacitance: 2.2pF
Max. forward voltage: 1V
Leakage current: 5mA
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
Power dissipation: 333mW
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PAM8610TR DIODES INCORPORATED PAM8610.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 10W; Ch: 2; Amp.class: D; QFN40; 7÷15VDC
Type of integrated circuit: audio amplifier
Output power: 10W
Integrated circuit features: low distortion THD; low noise; stereo
Mounting: SMD
Number of channels: 2
Amplifier class: D
Case: QFN40
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 7...15V DC
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DMN2056U-7 DMN2056U-7 DIODES INCORPORATED DMN2056U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DSS5160T-7 DSS5160T.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 725mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 60V
Power dissipation: 725mW
Polarisation: bipolar
Pulsed collector current: 2A
Type of transistor: PNP
Current gain: 100...200
Frequency: 150MHz
Collector current: 1A
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DSS5160FDB-7 DSS5160FDB.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2.47W
Case: U-DFN2020-6
Pulsed collector current: 1.5A
Mounting: SMD
Kind of package: reel; tape
Frequency: 65MHz
Manufacturer standard package: 3000pcs.
Current gain: 70...170
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DSS5160V-7 ds31670.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 600mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 60V
Power dissipation: 0.6W
Polarisation: bipolar
Pulsed collector current: 2A
Type of transistor: PNP
Current gain: 100...200
Frequency: 150MHz
Collector current: 1A
Produkt ist nicht verfügbar
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DSS5160TQ-7 DSS5160TQ.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 725mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 60V
Power dissipation: 725mW
Polarisation: bipolar
Pulsed collector current: 2A
Application: automotive industry
Type of transistor: PNP
Current gain: 100...200
Frequency: 150MHz
Collector current: 1A
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DSS5160U-7 ds31685.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 400mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 60V
Power dissipation: 0.4W
Polarisation: bipolar
Pulsed collector current: 2A
Type of transistor: PNP
Current gain: 100...200
Frequency: 150MHz
Collector current: 1A
Produkt ist nicht verfügbar
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DSS45160FDB-7 DSS45160FDB.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 2.47W
Case: U-DFN2020-6
Polarisation: bipolar
Kind of transistor: complementary pair
Pulsed collector current: 1.5A
Type of transistor: NPN / PNP
Current gain: 70...430
Kind of package: reel; tape
Frequency: 90...175MHz
Collector current: 1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 60V
Power dissipation: 2.47W
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BAS70-04Q-7-F BAS70_-04_-05_-06.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Capacitance: 2pF
Max. forward voltage: 0.41V
Max. forward impulse current: 0.1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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DMT6015LFVW-7 DMT6015LFVW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 127A; 2.8W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Pulsed drain current: 127A
Power dissipation: 2.8W
Gate charge: 15.7nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 22mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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2N7002KQ-7 2N7002K.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; 0.37W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
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2N7002K-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; 370mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.37W
Case: SOT23
On-state resistance: 2Ω
Mounting: SMD
Produkt ist nicht verfügbar
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SMCJ43CA-13-F SMCJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 21.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 21.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1N4448WQ-7-F 1N4448W.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 0.72V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123
Max. forward voltage: 0.72V
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Capacitance: 4pF
Max. forward impulse current: 1A
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74AHCT125T14-13 74AHCT125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: AHCT
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of package: reel; tape
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74AHCT125S14-13 74AHCT125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: AHCT
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of package: reel; tape
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BZX84C15W-7-F BZX84CxxW_SER.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX84C13-7-F BZX84Cxx_SER.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 13V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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AS7805ADTR-G1 AS78XXA.pdf
Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; AS78XXA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AS78XXA
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7.5...20V
Produkt ist nicht verfügbar
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AS7805ADTR-E1 AS78XXA.pdf
Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; AS78XXA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AS78XXA
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7.5...20V
Produkt ist nicht verfügbar
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74HC00S14-13 74HC00.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Supply voltage: 2...6V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Produkt ist nicht verfügbar
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74HC00T14-13 74HC00.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Supply voltage: 2...6V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Produkt ist nicht verfügbar
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74HCT00T14-13 74HCT00.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HCT
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS; TTL
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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74HCT00S14-13 74HCT00.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HCT
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS; TTL
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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BAT54CQ-7-F BAT54Q_AQ_CQ_SQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Application: automotive industry
auf Bestellung 4710 Stücke:
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BAT54CDW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Max. forward voltage: 1V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Leakage current: 2µA
Produkt ist nicht verfügbar
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BAT54CW-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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1N4448WS-7-F 1N4448WS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Capacitance: 4pF
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
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1N4448WSF-7 1N4448WSF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323F; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323F
Max. forward voltage: 0.62V
Kind of package: reel; tape
Max. load current: 0.5A
Capacitance: 4pF
Max. forward impulse current: 1A
auf Bestellung 486 Stücke:
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1N4448WSFQ-7 1N4448WSF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323F; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323F
Max. forward voltage: 0.62V
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Capacitance: 4pF
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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1N4448WSQ-7-F ds30096.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 0.62V
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Capacitance: 4pF
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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ADTC114ECAQ-7 ADTC114ECAQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 30
Produkt ist nicht verfügbar
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ADTC114ECAQ-13 ADTC114ECAQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 10000pcs.
Application: automotive industry
Current gain: 30
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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DDTC114ECAQ-7-F ds30329.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 35
Produkt ist nicht verfügbar
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DDTC114EE-7-F ds30313.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 30
Produkt ist nicht verfügbar
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DDTC114ELP-7 ds30945.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 10...100
Produkt ist nicht verfügbar
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DSS5240T-7
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 730mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Power dissipation: 0.73W
Polarisation: bipolar
Type of transistor: PNP
Frequency: 100MHz
Collector current: 2A
Produkt ist nicht verfügbar
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DSS5220TQ-7 DSS5220TQ.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 1.2W; SOT23; automotive industry
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 20V
Power dissipation: 1.2W
Polarisation: bipolar
Pulsed collector current: 3A
Application: automotive industry
Type of transistor: PNP
Current gain: 150...225
Frequency: 100MHz
Collector current: 2A
Produkt ist nicht verfügbar
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DSS5240TQ-7 DSS5240TQ.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 730mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Power dissipation: 0.73W
Polarisation: bipolar
Pulsed collector current: 3A
Application: automotive industry
Type of transistor: PNP
Current gain: 100...300
Frequency: 100MHz
Collector current: 2A
Produkt ist nicht verfügbar
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DSS5220T-7 DSS5220T.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 1.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 20V
Power dissipation: 1.2W
Polarisation: bipolar
Pulsed collector current: 3A
Type of transistor: PNP
Current gain: 150...225
Frequency: 100MHz
Collector current: 2A
Produkt ist nicht verfügbar
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DSS5220V-7 ds31660.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 20V
Power dissipation: 0.6W
Polarisation: bipolar
Pulsed collector current: 4A
Type of transistor: PNP
Current gain: 60...220
Frequency: 150MHz
Collector current: 2A
Produkt ist nicht verfügbar
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DSS5240V-7 ds31673.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1.8A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Power dissipation: 0.6W
Polarisation: bipolar
Pulsed collector current: 3A
Type of transistor: PNP
Current gain: 50...800
Frequency: 150MHz
Collector current: 1.8A
Produkt ist nicht verfügbar
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DSS5240Y-7 DSS5240Y.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 650mW; SOT363
Mounting: SMD
Case: SOT363
Collector-emitter voltage: 40V
Power dissipation: 0.65W
Polarisation: bipolar
Type of transistor: PNP
Frequency: 220MHz
Collector current: 2A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DDTA114EUA-7-F DDTAxxxUA.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 5 Stücke
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DMP2035UTS-13 ds31940.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 3.96A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 22A
Gate charge: 15.4nC
Semiconductor structure: common drain
Produkt ist nicht verfügbar
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MMSZ5240BS-7-F mmsz52xxbs_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 2 Stücke:
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MMSZ5240B-7-F mmsz52xxb_Ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 10V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 1828 Stücke:
Lieferzeit 14-21 Tag (e)
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MMSZ5240BQ-7-F mmsz52xxb_Ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 10V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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DZT2907A-13 DZT2907A.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.2A; 1W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.2A
Power dissipation: 1W
Case: SOT223
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Manufacturer standard package: 2500pcs.
Produkt ist nicht verfügbar
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DXT2907A-13 ds30944.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Manufacturer standard package: 2500pcs.
Pulsed collector current: 0.8A
Produkt ist nicht verfügbar
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SDT20100CT SDT20100CT-SDT20100CTFP.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 700mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Kind of package: tube
Max. forward impulse current: 150A
Produkt ist nicht verfügbar
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SBR20100CT SBR20100CT%20N0911%20REV.A.pdf SBR20100.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; Ifsm: 150A; TO220AB; tube; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 20A
Technology: SBR®
Max. forward impulse current: 150A
Produkt ist nicht verfügbar
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SBR20100CT-G SBR20100.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; Ifsm: 150A; TO220AB; tube; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 20A
Technology: SBR®
Max. forward impulse current: 150A
Produkt ist nicht verfügbar
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SBR20100CTFP SBR20100.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; Ifsm: 150A; ITO220AB; tube; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Max. load current: 20A
Technology: SBR®
Max. forward impulse current: 150A
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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SMAJ18CA-13-F SMAJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1221 Stücke:
Lieferzeit 14-21 Tag (e)
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SMCJ16A-13-F SMCJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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MMBTA63-7-F ds30055.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 5000...10000
Manufacturer standard package: 3000pcs.
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DZ23C2V7-7-F DZ23C2V7-DZ23C51.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; SOT23; double,common cathode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Zener voltage: 2.7V
Type of diode: Zener
Power dissipation: 0.3W
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BZX84C2V7-7-F BZX84Cxx_SER.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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1N6263W-7-F 1N6263W.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 60V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15mA
Semiconductor structure: single diode
Capacitance: 2.2pF
Max. forward voltage: 1V
Leakage current: 5mA
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
Power dissipation: 333mW
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PAM8610TR PAM8610.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 10W; Ch: 2; Amp.class: D; QFN40; 7÷15VDC
Type of integrated circuit: audio amplifier
Output power: 10W
Integrated circuit features: low distortion THD; low noise; stereo
Mounting: SMD
Number of channels: 2
Amplifier class: D
Case: QFN40
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 7...15V DC
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DMN2056U-7 DMN2056U.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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