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DMT6009LPS-13 DIODES INCORPORATED DMT6009LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LSS-13 DMT6009LSS-13 DIODES INCORPORATED DMT6009LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010LFG-13 DIODES INCORPORATED DMT6010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010LFG-7 DIODES INCORPORATED DMT6010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010LPS-13 DIODES INCORPORATED DMT6010LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6011LSS-13 DMT6011LSS-13 DIODES INCORPORATED DMT6011LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Drain current: 8.5A
Gate-source voltage: ±20V
Pulsed drain current: 85A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6012LSS-13 DMT6012LSS-13 DIODES INCORPORATED DMT6012LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14mΩ
Power dissipation: 1.84W
Drain current: 8.4A
Gate-source voltage: ±20V
Pulsed drain current: 65A
Drain-source voltage: 60V
Kind of channel: enhancement
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BC847CQ-7-F BC847CQ-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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BC847CT-7-F BC847CT-7-F DIODES INCORPORATED BC847xT.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
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481+0.15 EUR
550+0.13 EUR
901+0.079 EUR
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BC847CW-13-F BC847CW-13-F DIODES INCORPORATED BC846_7_8W.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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BC847CW-7-F BC847CW-7-F DIODES INCORPORATED BC846_7_8W.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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770+0.093 EUR
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1263+0.057 EUR
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BAT54SW-13-F BAT54SW-13-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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BAT54SW-7-F
+1
 		BAT54SW-7-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
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589+0.12 EUR
989+0.072 EUR
1413+0.051 EUR
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BAT54SWQ-7-F BAT54SWQ-7-F DIODES INCORPORATED SWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
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BC847BT-7-F BC847BT-7-F DIODES INCORPORATED BC847xT.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
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715+0.1 EUR
1038+0.069 EUR
1247+0.057 EUR
2128+0.034 EUR
2891+0.025 EUR
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BAV99Q-13-F BAV99Q-13-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAV99T-7-F BAV99T-7-F DIODES INCORPORATED BAS16T_BAW56T_BAV70T_BAV99T.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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511+0.14 EUR
556+0.13 EUR
782+0.092 EUR
1034+0.069 EUR
1188+0.06 EUR
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BAT54AWQ-7-F BAT54AWQ-7-F DIODES INCORPORATED SWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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ZTL431AQFTA ZTL431AQFTA DIODES INCORPORATED ZTL431,432.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
auf Bestellung 2990 Stücke:
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239+0.3 EUR
385+0.19 EUR
447+0.16 EUR
500+0.14 EUR
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LMV358M8G-13 LMV358M8G-13 DIODES INCORPORATED LMV321_358.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; Uoper: 2.7÷5.5V; MSOP8; 10dB
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Operating voltage: 2.7...5.5V
Mounting: SMT
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 1V/μs
Open-loop gain: 10dB
Integrated circuit features: rail-to-rail output
Input offset voltage: 7mV
Kind of package: reel; tape
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240+0.3 EUR
271+0.26 EUR
327+0.22 EUR
336+0.21 EUR
371+0.19 EUR
500+0.17 EUR
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ZTL432AFTA ZTL432AFTA DIODES INCORPORATED ZTL431,432.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
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432+0.17 EUR
486+0.15 EUR
544+0.13 EUR
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DMT3020LFDB-13 DIODES INCORPORATED DMT3020LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3020LFDB-7 DIODES INCORPORATED DMT3020LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3020LFDBQ-13 DIODES INCORPORATED DMT3020LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3020LFDF-13 DIODES INCORPORATED DMT3020LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3020LFDF-7 DIODES INCORPORATED DMT3020LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3020LFDFQ-13 DIODES INCORPORATED DMT3020LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 0.4W
Drain current: 6.7A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3020LFDFQ-7 DIODES INCORPORATED DMT3020LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3020LSDQ-13 DMT3020LSDQ-13 DIODES INCORPORATED DMT3020LSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.5W
Drain current: 13A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3020UFDB-13 DIODES INCORPORATED DMT3020UFDB.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±12V
Gate charge: 8.8nC
On-state resistance: 30mΩ
Power dissipation: 1.3W
Drain current: 5.2A
Drain-source voltage: 30V
Pulsed drain current: 35A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
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DMT30M9LPS-13 DIODES INCORPORATED DMT30M9LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 160.5nC
On-state resistance: 1.6mΩ
Power dissipation: 2.6W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
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BC857BT-7-F BC857BT-7-F DIODES INCORPORATED BC857T.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 4895 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
596+0.12 EUR
928+0.077 EUR
1254+0.057 EUR
1421+0.05 EUR
3000+0.042 EUR
Mindestbestellmenge: 417
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BC857BW-7-F BC857BW-7-F DIODES INCORPORATED BC856AW-BC858CW.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel
Frequency: 200MHz
Quantity in set/package: 3000pcs.
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113+0.63 EUR
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ADTC114EUAQ-7 ADTC114EUAQ-7 DIODES INCORPORATED ADTC114EUAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
Application: automotive industry
Quantity in set/package: 3000pcs.
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DDTC114EUA-7-F DDTC114EUA-7-F DIODES INCORPORATED DDTCxxxUA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Frequency: 250MHz
auf Bestellung 4634 Stücke:
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511+0.14 EUR
794+0.09 EUR
953+0.075 EUR
1323+0.054 EUR
2067+0.035 EUR
3000+0.028 EUR
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74LVC1G17SE-7 74LVC1G17SE-7 DIODES INCORPORATED 74LVC1G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Kind of output: push-pull
Manufacturer series: LVC
auf Bestellung 747 Stücke:
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715+0.1 EUR
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74LVC1G17W5-7 74LVC1G17W5-7 DIODES INCORPORATED 74LVC1G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Kind of output: push-pull
Manufacturer series: LVC
auf Bestellung 1052 Stücke:
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500+0.14 EUR
676+0.11 EUR
770+0.093 EUR
913+0.078 EUR
1052+0.069 EUR
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PAM2863ECR PAM2863ECR DIODES INCORPORATED PAM2863.pdf Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 2A; SOP8; SMD; Ch: 1; reel,tape
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Output current: 2A
Case: SOP8
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Operating voltage: 4.5...40V DC
auf Bestellung 27 Stücke:
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AP2202K-3.3TRE1 AP2202K-3.3TRE1 DIODES INCORPORATED AP2202.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2202
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Integrated circuit features: shutdown mode control input
auf Bestellung 2390 Stücke:
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334+0.21 EUR
500+0.14 EUR
562+0.13 EUR
676+0.11 EUR
695+0.1 EUR
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LM2904QS-13 LM2904QS-13 DIODES INCORPORATED LM2902Q_04Q.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 100dB; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
auf Bestellung 2817 Stücke:
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313+0.23 EUR
374+0.19 EUR
432+0.17 EUR
538+0.13 EUR
782+0.092 EUR
794+0.09 EUR
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LM2904S-13 LM2904S-13 DIODES INCORPORATED LM2902Q_04Q.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO8; 100dB; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
auf Bestellung 647 Stücke:
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148+0.49 EUR
240+0.3 EUR
298+0.24 EUR
407+0.18 EUR
491+0.15 EUR
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AL5802-7 AL5802-7 DIODES INCORPORATED AL5802.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 120mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Output current: 0.12A
Case: SOT26
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Operating voltage: 4.5...30V DC
auf Bestellung 4250 Stücke:
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295+0.24 EUR
353+0.2 EUR
394+0.18 EUR
468+0.15 EUR
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ZXGD3004E6TA ZXGD3004E6TA DIODES INCORPORATED ZXGD3004E6.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -1.9÷1.9A; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -1.9...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 13.4ns
Pulse fall time: 12.4ns
Kind of package: reel; tape
Supply voltage: 40V
Kind of output: non-inverting
auf Bestellung 1238 Stücke:
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109+0.66 EUR
154+0.46 EUR
170+0.42 EUR
194+0.37 EUR
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ZXGD3006E6TA ZXGD3006E6TA DIODES INCORPORATED ZXGD3006E6.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -7.7÷6.4A; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -7.7...6.4A
Number of channels: 1
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 24ns
Pulse fall time: 20ns
Kind of package: reel; tape
Supply voltage: 40V
Kind of output: non-inverting
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126+0.57 EUR
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AP2114HA-3.3TRG1 AP2114HA-3.3TRG1 DIODES INCORPORATED AP2114.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Integrated circuit features: shutdown mode control input
Case: SOT223
Operating temperature: -40...85°C
Output current: 1A
Voltage drop: 0.75V
Input voltage: 2.5...6V
Number of channels: 1
Tolerance: ±1.5%
Output voltage: 3.3V
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
414+0.17 EUR
477+0.15 EUR
582+0.12 EUR
642+0.11 EUR
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AP2151WG-7 AP2151WG-7 DIODES INCORPORATED AP2141-51.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Mounting: SMD
Case: SOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
auf Bestellung 6731 Stücke:
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139+0.51 EUR
168+0.43 EUR
186+0.38 EUR
211+0.34 EUR
252+0.28 EUR
278+0.26 EUR
500+0.24 EUR
1000+0.23 EUR
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AZ1117H-5.0TRG1 AZ1117H-5.0TRG1 DIODES INCORPORATED AZ1117_Rev2.1.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.25V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
auf Bestellung 148 Stücke:
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112+0.64 EUR
135+0.53 EUR
144+0.5 EUR
148+0.49 EUR
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SBR160S23-7 SBR160S23-7 DIODES INCORPORATED SBR160S23.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SBR®; SMD; 60V; 0.9A; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Technology: SBR®
Type of diode: Schottky rectifying
Max. forward voltage: 0.53V
Load current: 0.9A
Max. off-state voltage: 60V
Max. forward impulse current: 15A
Semiconductor structure: single diode
auf Bestellung 1435 Stücke:
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200+0.36 EUR
278+0.26 EUR
348+0.21 EUR
388+0.18 EUR
500+0.14 EUR
1000+0.13 EUR
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AP22802AW5-7 AP22802AW5-7 DIODES INCORPORATED AP22802.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 60mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP22802BW5-7 AP22802BW5-7 DIODES INCORPORATED AP22802.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
auf Bestellung 429 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
429+0.17 EUR
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LM2904M8-13 LM2904M8-13 DIODES INCORPORATED LM2902_04.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...85°C
Slew rate: 0.3V/μs
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.93 EUR
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AP2125K-3.3TRG1 AP2125K-3.3TRG1 DIODES INCORPORATED AP2125.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.36V
Output voltage: 3V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2125
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...6V
auf Bestellung 1967 Stücke:
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385+0.19 EUR
516+0.14 EUR
599+0.12 EUR
738+0.097 EUR
837+0.086 EUR
916+0.078 EUR
1000+0.074 EUR
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LM2904TH-13 LM2904TH-13 DIODES INCORPORATED LM2902_04.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...85°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
auf Bestellung 1275 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
241+0.3 EUR
300+0.24 EUR
410+0.17 EUR
496+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 148
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AP22817BKAWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 1.5A
Supply voltage: 2.7...5.5V DC
Case: TSOT25
Kind of integrated circuit: high-side; USB switch
Active logical level: low
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BC847BW-7-F BC847BW-7-F DIODES INCORPORATED BC846_7_8W.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 5504 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
603+0.12 EUR
887+0.081 EUR
1058+0.068 EUR
1603+0.045 EUR
1924+0.037 EUR
3000+0.028 EUR
Mindestbestellmenge: 455
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BC847BWQ-13-F BC847BWQ-13-F DIODES INCORPORATED BC846AW-BC848CW.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 310W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 310W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Application: automotive industry
Quantity in set/package: 10000pcs.
auf Bestellung 1170 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
705+0.1 EUR
1161+0.062 EUR
1170+0.061 EUR
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DMT6005LSS-13 DIODES INCORPORATED DMT6005LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.5A; Idm: 80A; 1.7W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47.1nC
On-state resistance: 6mΩ
Power dissipation: 1.7W
Drain current: 13.5A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LFG-7 DIODES INCORPORATED DMT6009LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34A; Idm: 90A; 19.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 10mΩ
Power dissipation: 19.2W
Drain current: 34A
Gate-source voltage: ±12V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010SCT DIODES INCORPORATED DMT6010SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 98A; Idm: 160A; 104W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 36.3nC
On-state resistance: 7.2mΩ
Power dissipation: 104W
Drain current: 98A
Gate-source voltage: ±20V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
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BSS138WQ-7-F DIODES INCORPORATED BSS138WQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 280mA; Idm: 1A; 500mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.28A
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMT6009LPS-13 DMT6009LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6009LSS-13 DMT6009LSS.pdf
DMT6009LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010LFG-13 DMT6010LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010LFG-7 DMT6010LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6010LPS-13 DMT6010LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6011LSS-13 DMT6011LSS.pdf
DMT6011LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Drain current: 8.5A
Gate-source voltage: ±20V
Pulsed drain current: 85A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6012LSS-13 DMT6012LSS.pdf
DMT6012LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14mΩ
Power dissipation: 1.84W
Drain current: 8.4A
Gate-source voltage: ±20V
Pulsed drain current: 65A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC847CQ-7-F ds11108.pdf
BC847CQ-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC847CT-7-F BC847xT.pdf
BC847CT-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 5518 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
481+0.15 EUR
550+0.13 EUR
901+0.079 EUR
1238+0.058 EUR
1409+0.051 EUR
3000+0.042 EUR
Mindestbestellmenge: 358
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BC847CW-13-F BC846_7_8W.pdf
BC847CW-13-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BC847CW-7-F BC846_7_8W.pdf
BC847CW-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 4543 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
770+0.093 EUR
1139+0.063 EUR
1263+0.057 EUR
1323+0.054 EUR
3000+0.041 EUR
Mindestbestellmenge: 455
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BAT54SW-13-F BAT54W_AW_CW_SW.pdf
BAT54SW-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BAT54SW-7-F BAT54W_AW_CW_SW.pdf
BAT54SW-7-F
+1
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
auf Bestellung 5319 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
589+0.12 EUR
989+0.072 EUR
1413+0.051 EUR
1588+0.045 EUR
3000+0.038 EUR
Mindestbestellmenge: 358
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BAT54SWQ-7-F SWQ.pdf
BAT54SWQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BC847BT-7-F BC847xT.pdf
BC847BT-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 8548 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
715+0.1 EUR
1038+0.069 EUR
1247+0.057 EUR
2128+0.034 EUR
2891+0.025 EUR
Mindestbestellmenge: 455
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BAV99Q-13-F BAV99.pdf
BAV99Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.97 EUR
Mindestbestellmenge: 24
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BAV99T-7-F BAS16T_BAW56T_BAV70T_BAV99T.pdf
BAV99T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 2408 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
511+0.14 EUR
556+0.13 EUR
782+0.092 EUR
1034+0.069 EUR
1188+0.06 EUR
Mindestbestellmenge: 417
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BAT54AWQ-7-F SWQ.pdf
BAT54AWQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
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ZTL431AQFTA ZTL431,432.pdf
ZTL431AQFTA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
385+0.19 EUR
447+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
LMV358M8G-13 LMV321_358.pdf
LMV358M8G-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; Uoper: 2.7÷5.5V; MSOP8; 10dB
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Operating voltage: 2.7...5.5V
Mounting: SMT
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 1V/μs
Open-loop gain: 10dB
Integrated circuit features: rail-to-rail output
Input offset voltage: 7mV
Kind of package: reel; tape
auf Bestellung 2290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
240+0.3 EUR
271+0.26 EUR
327+0.22 EUR
336+0.21 EUR
371+0.19 EUR
500+0.17 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
ZTL432AFTA ZTL431,432.pdf
ZTL432AFTA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 1542 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
432+0.17 EUR
486+0.15 EUR
544+0.13 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDB-13 DMT3020LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDB-7 DMT3020LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDBQ-13 DMT3020LFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDF-13 DMT3020LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDF-7 DMT3020LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDFQ-13 DMT3020LFDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 0.4W
Drain current: 6.7A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LFDFQ-7 DMT3020LFDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LSDQ-13 DMT3020LSDQ.pdf
DMT3020LSDQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.5W
Drain current: 13A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020UFDB-13 DMT3020UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±12V
Gate charge: 8.8nC
On-state resistance: 30mΩ
Power dissipation: 1.3W
Drain current: 5.2A
Drain-source voltage: 30V
Pulsed drain current: 35A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
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DMT30M9LPS-13 DMT30M9LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 160.5nC
On-state resistance: 1.6mΩ
Power dissipation: 2.6W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BC857BT-7-F BC857T.pdf
BC857BT-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 4895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
596+0.12 EUR
928+0.077 EUR
1254+0.057 EUR
1421+0.05 EUR
3000+0.042 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BC857BW-7-F BC856AW-BC858CW.pdf
BC857BW-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel
Frequency: 200MHz
Quantity in set/package: 3000pcs.
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
113+0.63 EUR
Mindestbestellmenge: 113
Im Einkaufswagen  Stück im Wert von  UAH
ADTC114EUAQ-7 ADTC114EUAQ.pdf
ADTC114EUAQ-7
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DDTC114EUA-7-F DDTCxxxUA.pdf
DDTC114EUA-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Frequency: 250MHz
auf Bestellung 4634 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
511+0.14 EUR
794+0.09 EUR
953+0.075 EUR
1323+0.054 EUR
2067+0.035 EUR
3000+0.028 EUR
Mindestbestellmenge: 511
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74LVC1G17SE-7 74LVC1G17.pdf
74LVC1G17SE-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Kind of output: push-pull
Manufacturer series: LVC
auf Bestellung 747 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
747+0.096 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G17W5-7 74LVC1G17.pdf
74LVC1G17W5-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Kind of output: push-pull
Manufacturer series: LVC
auf Bestellung 1052 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
676+0.11 EUR
770+0.093 EUR
913+0.078 EUR
1052+0.069 EUR
Mindestbestellmenge: 500
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PAM2863ECR PAM2863.pdf
PAM2863ECR
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 2A; SOP8; SMD; Ch: 1; reel,tape
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Output current: 2A
Case: SOP8
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Operating voltage: 4.5...40V DC
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.65 EUR
Mindestbestellmenge: 27
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AP2202K-3.3TRE1 AP2202.pdf
AP2202K-3.3TRE1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2202
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Integrated circuit features: shutdown mode control input
auf Bestellung 2390 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
500+0.14 EUR
562+0.13 EUR
676+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 334
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LM2904QS-13 LM2902Q_04Q.pdf
LM2904QS-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 100dB; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
auf Bestellung 2817 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
374+0.19 EUR
432+0.17 EUR
538+0.13 EUR
782+0.092 EUR
794+0.09 EUR
Mindestbestellmenge: 313
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LM2904S-13 LM2902Q_04Q.pdf
LM2904S-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO8; 100dB; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
auf Bestellung 647 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
240+0.3 EUR
298+0.24 EUR
407+0.18 EUR
491+0.15 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
AL5802-7 AL5802.pdf
AL5802-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 120mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Output current: 0.12A
Case: SOT26
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Operating voltage: 4.5...30V DC
auf Bestellung 4250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
353+0.2 EUR
394+0.18 EUR
468+0.15 EUR
Mindestbestellmenge: 295
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ZXGD3004E6TA ZXGD3004E6.pdf
ZXGD3004E6TA
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -1.9÷1.9A; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -1.9...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 13.4ns
Pulse fall time: 12.4ns
Kind of package: reel; tape
Supply voltage: 40V
Kind of output: non-inverting
auf Bestellung 1238 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
154+0.46 EUR
170+0.42 EUR
194+0.37 EUR
Mindestbestellmenge: 109
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ZXGD3006E6TA ZXGD3006E6.pdf
ZXGD3006E6TA
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -7.7÷6.4A; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -7.7...6.4A
Number of channels: 1
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 24ns
Pulse fall time: 20ns
Kind of package: reel; tape
Supply voltage: 40V
Kind of output: non-inverting
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
126+0.57 EUR
Mindestbestellmenge: 126
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AP2114HA-3.3TRG1 AP2114.pdf
AP2114HA-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Integrated circuit features: shutdown mode control input
Case: SOT223
Operating temperature: -40...85°C
Output current: 1A
Voltage drop: 0.75V
Input voltage: 2.5...6V
Number of channels: 1
Tolerance: ±1.5%
Output voltage: 3.3V
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
414+0.17 EUR
477+0.15 EUR
582+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 295
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AP2151WG-7 AP2141-51.pdf
AP2151WG-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Mounting: SMD
Case: SOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
auf Bestellung 6731 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
168+0.43 EUR
186+0.38 EUR
211+0.34 EUR
252+0.28 EUR
278+0.26 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
AZ1117H-5.0TRG1 AZ1117_Rev2.1.pdf
AZ1117H-5.0TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.25V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
135+0.53 EUR
144+0.5 EUR
148+0.49 EUR
Mindestbestellmenge: 112
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SBR160S23-7 SBR160S23.pdf
SBR160S23-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SBR®; SMD; 60V; 0.9A; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Technology: SBR®
Type of diode: Schottky rectifying
Max. forward voltage: 0.53V
Load current: 0.9A
Max. off-state voltage: 60V
Max. forward impulse current: 15A
Semiconductor structure: single diode
auf Bestellung 1435 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
278+0.26 EUR
348+0.21 EUR
388+0.18 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
AP22802AW5-7 AP22802.pdf
AP22802AW5-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 60mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Produkt ist nicht verfügbar
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AP22802BW5-7 AP22802.pdf
AP22802BW5-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
auf Bestellung 429 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
429+0.17 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
LM2904M8-13 LM2902_04.pdf
LM2904M8-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...85°C
Slew rate: 0.3V/μs
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.93 EUR
Mindestbestellmenge: 37
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AP2125K-3.3TRG1 AP2125.pdf
AP2125K-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.36V
Output voltage: 3V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2125
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...6V
auf Bestellung 1967 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
516+0.14 EUR
599+0.12 EUR
738+0.097 EUR
837+0.086 EUR
916+0.078 EUR
1000+0.074 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
LM2904TH-13 LM2902_04.pdf
LM2904TH-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...85°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
auf Bestellung 1275 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
241+0.3 EUR
300+0.24 EUR
410+0.17 EUR
496+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
AP22817BKAWT-7 AP22816_17_18.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Number of channels: 1
Output current: 1.5A
Supply voltage: 2.7...5.5V DC
Case: TSOT25
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Produkt ist nicht verfügbar
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BC847BW-7-F BC846_7_8W.pdf
BC847BW-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
auf Bestellung 5504 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
603+0.12 EUR
887+0.081 EUR
1058+0.068 EUR
1603+0.045 EUR
1924+0.037 EUR
3000+0.028 EUR
Mindestbestellmenge: 455
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BC847BWQ-13-F BC846AW-BC848CW.pdf
BC847BWQ-13-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 310W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 310W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Application: automotive industry
Quantity in set/package: 10000pcs.
auf Bestellung 1170 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
705+0.1 EUR
1161+0.062 EUR
1170+0.061 EUR
Mindestbestellmenge: 455
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DMT6005LSS-13 DMT6005LSS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.5A; Idm: 80A; 1.7W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47.1nC
On-state resistance: 6mΩ
Power dissipation: 1.7W
Drain current: 13.5A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6009LFG-7 DMT6009LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34A; Idm: 90A; 19.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 10mΩ
Power dissipation: 19.2W
Drain current: 34A
Gate-source voltage: ±12V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6010SCT DMT6010SCT.pdf
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 98A; Idm: 160A; 104W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 36.3nC
On-state resistance: 7.2mΩ
Power dissipation: 104W
Drain current: 98A
Gate-source voltage: ±20V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS138WQ-7-F BSS138WQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 280mA; Idm: 1A; 500mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.28A
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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