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DFLT43A-7 DFLT43A-7 Diodes Incorporated ds30581.pdf Description: TVS DIODE 43VWM POWERDI123
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DFLT7V0A-7 DFLT7V0A-7 Diodes Incorporated ds30581.pdf Description: TVS DIODE 7VWM 12VC POWERDI123
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DFLT9V0A-7 DFLT9V0A-7 Diodes Incorporated DFLT5V0A_DFLT220A.pdf Description: TVS DIODE 9VWM 15.4VC PWRDI 123
Voltage - Breakdown (Min): 10V
Unidirectional Channels: 1
Supplier Device Package: PowerDI™ 123
Voltage - Reverse Standoff (Typ): 9V
Current - Peak Pulse (10/1000µs): 14.6A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: POWERDI®123
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 225W
Voltage - Clamping (Max) @ Ipp: 15.4V
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DFLZ11-7 DFLZ11-7 Diodes Incorporated DFLZ5V1-DFLZ39.pdf Description: DIODE ZENER 11V 1W POWERDI 123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: PowerDI™ 123
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
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DFLZ36-7 DFLZ36-7 Diodes Incorporated ds30464.pdf Description: DIODE ZENER 36V 1W POWERDI123
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DFLZ7V5-7 DFLZ7V5-7 Diodes Incorporated DFLZ5V1-DFLZ39.pdf Description: DIODE ZENER 7.5V 1W POWERDI 123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: PowerDI™ 123
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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DIMD10A-7 DIMD10A-7 Diodes Incorporated DIMD10A.pdf Description: TRANS NPN/PNP PREBIAS 0.3W SC74R
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DMC3018LSD-13 DMC3018LSD-13 Diodes Incorporated ds31310.pdf Description: MOSFET N/P-CH 30V 9.1A/6A 8-SOIC
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DMC3035LSD-13 DMC3035LSD-13 Diodes Incorporated ds31312.pdf Description: MOSFET N/P-CH 30V 6.9A/5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 384pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
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DMC3036LSD-13 DMC3036LSD-13 Diodes Incorporated DMC3036LSD.pdf Description: MOSFET N/P-CH 30V 5A/4.5A 8-SOIC
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DMMT3906-7-F DMMT3906-7-F Diodes Incorporated ds30293.pdf Description: TRANS 2PNP 40V 200MA SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-26
Part Status: Active
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DMMT5551S-7-F DMMT5551S-7-F Diodes Incorporated ds30436.pdf Description: TRANS 2NPN 160V 200MA SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-26
Part Status: Active
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DMN3030LSS-13 DMN3030LSS-13 Diodes Incorporated DMN3030LSS.pdf Description: MOSFET N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 741 pF @ 15 V
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DMN3033LDM-7 DMN3033LDM-7 Diodes Incorporated ds31345.pdf Description: MOSFET N-CH 30V 6.9A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 6.9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
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DMN32D2LDF-7 DMN32D2LDF-7 Diodes Incorporated ds31238.pdf Description: MOSFET 2N-CH 30V 0.4A SOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-353
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DMN32D2LV-7 DMN32D2LV-7 Diodes Incorporated Description: MOSFET 2N-CH 30V 0.4A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
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DMN5L06T-7 DMN5L06T-7 Diodes Incorporated ds30721.pdf Description: MOSFET N-CH 50V 280MA SOT-523
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DMN5L06V-7 DMN5L06V-7 Diodes Incorporated ds30604.pdf Description: MOSFET 2N-CH 50V 0.28A SOT-563
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DMN5L06VA-7 DMN5L06VA-7 Diodes Incorporated ds30604.pdf Description: MOSFET 2N-CH 50V 0.28A SOT-563
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DMN5L06W-7 DMN5L06W-7 Diodes Incorporated ds30613.pdf Description: MOSFET N-CH 50V 280MA SC70-3
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DMP2022LSS-13 DMP2022LSS-13 Diodes Incorporated ds31373.pdf Description: MOSFET P-CH 20V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2444 pF @ 10 V
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DMP3035LSS-13 DMP3035LSS-13 Diodes Incorporated DMP3035LSS.pdf Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 20 V
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DMP3056LSD-13 DMP3056LSD-13 Diodes Incorporated ds31420.pdf Description: MOSFET 2P-CH 30V 6.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMP3056LSS-13 DMP3056LSS-13 Diodes Incorporated ds31419.pdf Description: MOSFET P-CH 30V 7.1A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 25 V
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DMP3098LSD-13 DMP3098LSD-13 Diodes Incorporated ds31448.pdf Description: MOSFET 2P-CH 30V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMP3100L-7 DMP3100L-7 Diodes Incorporated DMP3100L.pdf Description: MOSFET P-CH 30V 2.7A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.08W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DMP57D5UFB-7 DMP57D5UFB-7 Diodes Incorporated ds31274.pdf Description: MOSFET P-CH 50V 200MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 4 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 425mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DNLS160-7 DNLS160-7 Diodes Incorporated DNLS160.pdf Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
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DNLS320A-7 DNLS320A-7 Diodes Incorporated DNLS320A.pdf Description: TRANS NPN 20V 2A SOT23-3
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DNLS320E-13 DNLS320E-13 Diodes Incorporated ds31326.pdf Description: TRANS NPN 20V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 20mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
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DNLS350E-13 DNLS350E-13 Diodes Incorporated ds31231.pdf Description: TRANS NPN 50V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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DNLS350Y-13 DNLS350Y-13 Diodes Incorporated 2DB1132Q-13_3.jpg Description: TRANS NPN 50V 3A SOT89-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-89-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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2500+0.23 EUR
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12500+0.2 EUR
25000+0.19 EUR
62500+0.18 EUR
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DPLS320A-7 DPLS320A-7 Diodes Incorporated DPLS320A.pdf Description: TRANS PNP 20V 2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Produkt ist nicht verfügbar
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DPLS4140E-13 DPLS4140E-13 Diodes Incorporated ds31279.pdf Description: TRANS PNP 140V 4A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
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DXT651-13 DXT651-13 Diodes Incorporated ds31184.pdf Description: TRANS NPN 60V 3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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DZT651-13 DZT651-13 Diodes Incorporated ds30809.pdf Description: TRANS NPN 60V 3A SOT-223
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DZT658-13 DZT658-13 Diodes Incorporated DZT658.pdf Description: TRANS NPN 400V 0.5A SOT223-3
Produkt ist nicht verfügbar
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DZT751-13 DZT751-13 Diodes Incorporated ds31115.pdf Description: TRANS PNP 60V 3A SOT-223
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DZT955-13 DZT955-13 Diodes Incorporated ds31280.pdf Description: TRANS PNP 140V 4A SOT223-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: SOT-223-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GBJ1008-F GBJ1008-F Diodes Incorporated ds21218.pdf Description: BRIDGE RECT 1PHASE 800V 10A GBJ
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GBJ
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15 Stücke
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GBJ1508-F GBJ1508-F Diodes Incorporated ds21219.pdf Description: BRIDGE RECT 1PHASE 800V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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GBJ2008-F GBJ2008-F Diodes Incorporated GBJ20005%7EGBJ2010.pdf Description: BRIDGE RECT 1PHASE 800V 20A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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1005+2.07 EUR
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5010+1.77 EUR
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GBJ2508-F GBJ2508-F Diodes Incorporated ds21221.pdf Description: BRIDGE RECT 1PHASE 800V 25A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 4455 Stücke:
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GBJ608-F GBJ608-F Diodes Incorporated ds21216.pdf Description: BRIDGE RECT 1PHASE 800V 6A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15 Stücke
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GBJ808-F GBJ808-F Diodes Incorporated ds21217.pdf Description: BRIDGE RECT 1PHASE 800V 8A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 555 Stücke:
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15+3.01 EUR
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GBU1001 GBU1001 Diodes Incorporated ds30052.pdf Description: BRIDGE RECT 1PHASE 100V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 835 Stücke:
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5+4.44 EUR
20+2.53 EUR
100+1.95 EUR
500+1.56 EUR
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GBU1004 GBU1004 Diodes Incorporated ds30052.pdf Description: BRIDGE RECT 1PHASE 400V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 1082 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.44 EUR
20+2.53 EUR
100+1.95 EUR
500+1.56 EUR
1000+1.43 EUR
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GBU4005 GBU4005 Diodes Incorporated ds21225.pdf Description: BRIDGE RECT 1PHASE 50V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 8676 Stücke:
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7+3.08 EUR
20+1.74 EUR
100+1.51 EUR
500+1.05 EUR
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2000+0.89 EUR
5000+0.8 EUR
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GBU402 GBU402 Diodes Incorporated ds21225.pdf Description: BRIDGE RECT 1PHASE 200V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 823 Stücke:
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7+3.03 EUR
20+1.69 EUR
100+1.29 EUR
500+1.01 EUR
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GBU6005 GBU6005 Diodes Incorporated ds21226.pdf Description: BRIDGE RECT 1PHASE 50V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 1882 Stücke:
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8+2.87 EUR
20+2.36 EUR
100+1.83 EUR
500+1.56 EUR
1000+1.26 EUR
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GBU602 GBU602 Diodes Incorporated ds21226.pdf Description: BRIDGE RECT 1PHASE 200V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1380 Stücke:
Lieferzeit 10-14 Tag (e)
6+4 EUR
20+2.26 EUR
100+1.74 EUR
500+1.38 EUR
1000+1.26 EUR
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KBJ4005G KBJ4005G Diodes Incorporated ds21206.pdf Description: BRIDGE RECT 1PHASE 50V 4A KBJ
auf Bestellung 920 Stücke:
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KBJ402G KBJ402G Diodes Incorporated ds21206.pdf Description: BRIDGE RECT 1PHASE 200V 4A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 510 Stücke:
Lieferzeit 10-14 Tag (e)
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20+1.37 EUR
100+1.04 EUR
500+0.96 EUR
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KBJ404G KBJ404G Diodes Incorporated ds21206.pdf Description: BRIDGE RECT 1PHASE 400V 4A KBJ
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KBJ406G KBJ406G Diodes Incorporated ds21206.pdf Description: BRIDGE RECT 1PHASE 600V 4A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 752 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.62 EUR
20+1.45 EUR
100+1.11 EUR
500+0.87 EUR
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KBJ6005G KBJ6005G Diodes Incorporated ds21207.pdf Description: BRIDGE RECT 1PHASE 50V 6A KBJ
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 50 V
Part Status: Obsolete
Supplier Device Package: KBJ
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
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KBJ602G KBJ602G Diodes Incorporated ds21207.pdf Description: BRIDGE RECT 1PHASE 200V 6A KBJ
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBJ
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBJ604G KBJ604G Diodes Incorporated ds21207.pdf Description: BRIDGE RECT 1PHASE 400V 6A KBJ
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: KBJ
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Packaging: Tube
Produkt ist nicht verfügbar
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KBJ606G KBJ606G Diodes Incorporated ds21207.pdf Description: BRIDGE RECT 1PHASE 600V 6A KBJ
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: KBJ
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Packaging: Tube
auf Bestellung 17 Stücke:
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9+2.39 EUR
10+2.14 EUR
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KBJ608G KBJ608G Diodes Incorporated ds21207.pdf Description: BRIDGE RECT 1PHASE 800V 6A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 13570 Stücke:
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6+3.77 EUR
20+2.13 EUR
100+1.63 EUR
500+1.3 EUR
1000+1.18 EUR
2000+1.09 EUR
5000+1 EUR
10000+0.93 EUR
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DFLT43A-7 ds30581.pdf
DFLT43A-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 43VWM POWERDI123
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DFLT7V0A-7 ds30581.pdf
DFLT7V0A-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 7VWM 12VC POWERDI123
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DFLT9V0A-7 DFLT5V0A_DFLT220A.pdf
DFLT9V0A-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 9VWM 15.4VC PWRDI 123
Voltage - Breakdown (Min): 10V
Unidirectional Channels: 1
Supplier Device Package: PowerDI™ 123
Voltage - Reverse Standoff (Typ): 9V
Current - Peak Pulse (10/1000µs): 14.6A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: POWERDI®123
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 225W
Voltage - Clamping (Max) @ Ipp: 15.4V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
6000+0.23 EUR
9000+0.21 EUR
15000+0.2 EUR
Mindestbestellmenge: 3000 Stücke
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DFLZ11-7 DFLZ5V1-DFLZ39.pdf
DFLZ11-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 11V 1W POWERDI 123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: PowerDI™ 123
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DFLZ36-7 ds30464.pdf
DFLZ36-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 36V 1W POWERDI123
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DFLZ7V5-7 DFLZ5V1-DFLZ39.pdf
DFLZ7V5-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 1W POWERDI 123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: PowerDI™ 123
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000 Stücke
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DIMD10A-7 DIMD10A.pdf
DIMD10A-7
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP PREBIAS 0.3W SC74R
Produkt ist nicht verfügbar
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DMC3018LSD-13 ds31310.pdf
DMC3018LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 9.1A/6A 8-SOIC
Produkt ist nicht verfügbar
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DMC3035LSD-13 ds31312.pdf
DMC3035LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.9A/5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 384pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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DMC3036LSD-13 DMC3036LSD.pdf
DMC3036LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 5A/4.5A 8-SOIC
Produkt ist nicht verfügbar
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DMMT3906-7-F ds30293.pdf
DMMT3906-7-F
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 40V 200MA SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.2 EUR
6000+0.18 EUR
15000+0.17 EUR
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DMMT5551S-7-F ds30436.pdf
DMMT5551S-7-F
Hersteller: Diodes Incorporated
Description: TRANS 2NPN 160V 200MA SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.17 EUR
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DMN3030LSS-13 DMN3030LSS.pdf
DMN3030LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 741 pF @ 15 V
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AnzahlPrivatkunde
2500+0.36 EUR
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DMN3033LDM-7 ds31345.pdf
DMN3033LDM-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6.9A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 6.9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.36 EUR
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DMN32D2LDF-7 ds31238.pdf
DMN32D2LDF-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.4A SOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-353
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
15000+0.12 EUR
21000+0.12 EUR
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DMN32D2LV-7
DMN32D2LV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.4A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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DMN5L06T-7 ds30721.pdf
DMN5L06T-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 280MA SOT-523
Produkt ist nicht verfügbar
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DMN5L06V-7 ds30604.pdf
DMN5L06V-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.28A SOT-563
Produkt ist nicht verfügbar
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DMN5L06VA-7 ds30604.pdf
DMN5L06VA-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.28A SOT-563
Produkt ist nicht verfügbar
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DMN5L06W-7 ds30613.pdf
DMN5L06W-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 280MA SC70-3
Produkt ist nicht verfügbar
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DMP2022LSS-13 ds31373.pdf
DMP2022LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2444 pF @ 10 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.55 EUR
5000+0.51 EUR
7500+0.49 EUR
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DMP3035LSS-13 DMP3035LSS.pdf
DMP3035LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 20 V
auf Bestellung 115000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.4 EUR
5000+0.38 EUR
12500+0.36 EUR
25000+0.35 EUR
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DMP3056LSD-13 ds31420.pdf
DMP3056LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 6.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.55 EUR
5000+0.5 EUR
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DMP3056LSS-13 ds31419.pdf
DMP3056LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 7.1A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.4 EUR
5000+0.37 EUR
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DMP3098LSD-13 ds31448.pdf
DMP3098LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Produkt ist nicht verfügbar
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DMP3100L-7 DMP3100L.pdf
DMP3100L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 2.7A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.08W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP57D5UFB-7 ds31274.pdf
DMP57D5UFB-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 200MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 4 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 425mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DNLS160-7 DNLS160.pdf
DNLS160-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
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DNLS320A-7 DNLS320A.pdf
DNLS320A-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 2A SOT23-3
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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DNLS320E-13 ds31326.pdf
DNLS320E-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 20mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 470000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.36 EUR
5000+0.33 EUR
7500+0.32 EUR
12500+0.3 EUR
17500+0.29 EUR
25000+0.27 EUR
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DNLS350E-13 ds31231.pdf
DNLS350E-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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DNLS350Y-13 2DB1132Q-13_3.jpg
DNLS350Y-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 3A SOT89-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-89-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 355000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.23 EUR
5000+0.21 EUR
12500+0.2 EUR
25000+0.19 EUR
62500+0.18 EUR
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DPLS320A-7 DPLS320A.pdf
DPLS320A-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Produkt ist nicht verfügbar
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DPLS4140E-13 ds31279.pdf
DPLS4140E-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 140V 4A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.42 EUR
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DXT651-13 ds31184.pdf
DXT651-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.37 EUR
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DZT651-13 ds30809.pdf
DZT651-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 3A SOT-223
auf Bestellung 125007500 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 2500 Stücke
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DZT658-13 DZT658.pdf
DZT658-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 400V 0.5A SOT223-3
Produkt ist nicht verfügbar
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DZT751-13 ds31115.pdf
DZT751-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 3A SOT-223
Produkt ist nicht verfügbar
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DZT955-13 ds31280.pdf
DZT955-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 140V 4A SOT223-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: SOT-223-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GBJ1008-F ds21218.pdf
GBJ1008-F
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 10A GBJ
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GBJ
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GBJ1508-F ds21219.pdf
GBJ1508-F
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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GBJ2008-F GBJ20005%7EGBJ2010.pdf
GBJ2008-F
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 20A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 6543 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.15 EUR
15+3.72 EUR
105+2.75 EUR
510+2.24 EUR
1005+2.07 EUR
2010+1.93 EUR
5010+1.77 EUR
Mindestbestellmenge: 4 Stücke
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GBJ2508-F ds21221.pdf
GBJ2508-F
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 25A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 4455 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.26 EUR
15+3.18 EUR
105+2.34 EUR
510+1.9 EUR
1005+1.76 EUR
2010+1.65 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GBJ608-F ds21216.pdf
GBJ608-F
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 6A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GBJ808-F ds21217.pdf
GBJ808-F
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 8A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 555 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+3.01 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GBU1001 ds30052.pdf
GBU1001
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 100V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 835 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.44 EUR
20+2.53 EUR
100+1.95 EUR
500+1.56 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GBU1004 ds30052.pdf
GBU1004
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 1082 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.44 EUR
20+2.53 EUR
100+1.95 EUR
500+1.56 EUR
1000+1.43 EUR
Mindestbestellmenge: 5 Stücke
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GBU4005 ds21225.pdf
GBU4005
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 8676 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.08 EUR
20+1.74 EUR
100+1.51 EUR
500+1.05 EUR
1000+0.95 EUR
2000+0.89 EUR
5000+0.8 EUR
Mindestbestellmenge: 7 Stücke
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GBU402 ds21225.pdf
GBU402
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 823 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.03 EUR
20+1.69 EUR
100+1.29 EUR
500+1.01 EUR
Mindestbestellmenge: 7 Stücke
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GBU6005 ds21226.pdf
GBU6005
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 1882 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.87 EUR
20+2.36 EUR
100+1.83 EUR
500+1.56 EUR
1000+1.26 EUR
Mindestbestellmenge: 8 Stücke
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GBU602 ds21226.pdf
GBU602
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1380 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4 EUR
20+2.26 EUR
100+1.74 EUR
500+1.38 EUR
1000+1.26 EUR
Mindestbestellmenge: 6 Stücke
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KBJ4005G ds21206.pdf
KBJ4005G
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 4A KBJ
auf Bestellung 920 Stücke:
Lieferzeit 10-14 Tag (e)
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KBJ402G ds21206.pdf
KBJ402G
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 4A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 510 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.48 EUR
20+1.37 EUR
100+1.04 EUR
500+0.96 EUR
Mindestbestellmenge: 9 Stücke
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KBJ404G ds21206.pdf
KBJ404G
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 4A KBJ
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
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KBJ406G ds21206.pdf
KBJ406G
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 4A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 752 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.62 EUR
20+1.45 EUR
100+1.11 EUR
500+0.87 EUR
Mindestbestellmenge: 8 Stücke
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KBJ6005G ds21207.pdf
KBJ6005G
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 6A KBJ
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 50 V
Part Status: Obsolete
Supplier Device Package: KBJ
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
KBJ602G ds21207.pdf
KBJ602G
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 6A KBJ
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBJ
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBJ604G ds21207.pdf
KBJ604G
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 6A KBJ
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: KBJ
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
KBJ606G ds21207.pdf
KBJ606G
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 6A KBJ
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: KBJ
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Packaging: Tube
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.39 EUR
10+2.14 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
KBJ608G ds21207.pdf
KBJ608G
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 6A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 13570 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.77 EUR
20+2.13 EUR
100+1.63 EUR
500+1.3 EUR
1000+1.18 EUR
2000+1.09 EUR
5000+1 EUR
10000+0.93 EUR
Mindestbestellmenge: 6 Stücke
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