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DMG4822SSD-13 DMG4822SSD-13 Diodes Incorporated DMG4822SSD.pdf Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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2500+0.43 EUR
5000+0.39 EUR
7500+0.38 EUR
12500+0.36 EUR
17500+0.34 EUR
25000+0.33 EUR
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DMG6602SVT-7 DMG6602SVT-7 Diodes Incorporated DMG6602SVT.pdf Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
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3000+0.17 EUR
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21000+0.13 EUR
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DMS3016SSSA-13 DMS3016SSSA-13 Diodes Incorporated DMS3016SSSA.pdf Description: MOSFET N-CH 30V 9.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.8A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Produkt ist nicht verfügbar
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DMN3110S-7 DMN3110S-7 Diodes Incorporated DMN3110S.pdf Description: MOSFET N-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
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DMG2307L-7 DMG2307L-7 Diodes Incorporated DMG2307L.pdf Description: MOSFET P-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
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500+0.2 EUR
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BC847BLP-7B BC847BLP-7B Diodes Incorporated BC847BLP.pdf Description: TRANS NPN 45V 0.1A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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DMG4822SSD-13 DMG4822SSD-13 Diodes Incorporated DMG4822SSD.pdf Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMS3016SSSA-13 DMS3016SSSA-13 Diodes Incorporated DMS3016SSSA.pdf Description: MOSFET N-CH 30V 9.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.8A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Produkt ist nicht verfügbar
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DMG6602SVT-7 DMG6602SVT-7 Diodes Incorporated DMG6602SVT.pdf Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
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38+0.47 EUR
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500+0.22 EUR
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BSN20-7 BSN20-7 Diodes Incorporated ds31898.pdf Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
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59+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
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DMN2990UDJ-7 DMN2990UDJ-7 Diodes Incorporated DMN2990UDJ.pdf Description: MOSFET 2N-CH 20V 0.45A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
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5000+0.17 EUR
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DMN4031SSD-13 DMN4031SSD-13 Diodes Incorporated DMN4031SSD.pdf Description: MOSFET 2N-CH 40V 5.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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16+1.11 EUR
19+0.95 EUR
100+0.71 EUR
500+0.56 EUR
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DMG4511SK4-13 DMG4511SK4-13 Diodes Incorporated DMG4511SK4.pdf Description: MOSFET N/P-CH 35V 5.3A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
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DMN4800LSSL-13 DMN4800LSSL-13 Diodes Incorporated DMN4800LSSL.pdf Description: MOSFET N-CH 30V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Power Dissipation (Max): 1.46W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
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500+0.37 EUR
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BC857BLP-7B BC857BLP-7B Diodes Incorporated ds30526.pdf Description: TRANS PNP 45V 0.1A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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DMC2038LVT-7 DMC2038LVT-7 Diodes Incorporated DMC2038LVT.pdf Description: MOSFET N/P-CH 20V 3.7A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
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43+0.41 EUR
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500+0.2 EUR
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DMC3021LK4-13 DMC3021LK4-13 Diodes Incorporated DMC3021LK4_Rev6-3_May2021.pdf Description: MOSFET N/P-CH 30V 9.4A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A, 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 751pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
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DMG1026UV-7 DMG1026UV-7 Diodes Incorporated DMG1026UV.pdf Description: MOSFET 2N-CH 60V 0.41A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
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PD10GE159 PD10GE159 Diodes Incorporated PD10GE159.pdf Description: XTAL OSC XO 159.3750MHZ PECL SMD
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10+8.1 EUR
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PD10GE156 PD10GE156 Diodes Incorporated PD-3.3V.pdf Description: XTAL OSC XO 156.2500MHZ PECL SMD
Produkt ist nicht verfügbar
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PDGPON155 PDGPON155 Diodes Incorporated PD-3.3V.pdf Description: XTAL OSC XO 155.5200MHZ PECL SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: PECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 80mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.053" (1.35mm)
Part Status: Active
Frequency: 155.52 MHz
Base Resonator: Crystal
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3+7.69 EUR
10+6.68 EUR
25+6.32 EUR
50+6.06 EUR
100+5.81 EUR
250+5.49 EUR
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DMC2700UDM-7 DMC2700UDM-7 Diodes Incorporated DMC2700UDM.pdf Description: MOSFET N/P-CH 20V 1.34A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.12W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
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DMC2700UDM-7 DMC2700UDM-7 Diodes Incorporated DMC2700UDM.pdf Description: MOSFET N/P-CH 20V 1.34A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.12W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
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AL8807W5-7 Diodes Incorporated Description: IC LED DRIVER RGLTR PWM 1A SOT25
Part Status: Obsolete
Voltage - Supply (Max): 36V
Voltage - Supply (Min): 6V
Dimming: Analog, PWM
Supplier Device Package: SOT-25
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 1A (Switch)
Operating Temperature: -40°C ~ 125°C (TJ)
Type: DC DC Regulator
Frequency: 1MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AP2337SA-7 AP2337SA-7 Diodes Incorporated AP2337.pdf Description: IC HOT SWAP CTRLR GP SOT23-3
Operating Temperature: -40°C ~ 85°C
Type: Hot Swap Controller
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: OVP, Thermal Limit, UVLO
Packaging: Tape & Reel (TR)
Current - Supply: 65 µA
Number of Channels: 1
Supplier Device Package: SOT-23-3
Current - Output (Max): 1A
Internal Switch(s): Yes
Applications: General Purpose
Voltage - Supply: 2.7V ~ 5.5V
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AP6502SP-13 AP6502SP-13 Diodes Incorporated AP6502.pdf Description: IC REG BUCK ADJ 2A 8SO
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 0.925V
Voltage - Input (Min): 4.7V
Voltage - Output (Max): 16V
Synchronous Rectifier: Yes
Supplier Device Package: 8-SO-EP
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 340kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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AP6503SP-13 AP6503SP-13 Diodes Incorporated AP6503.pdf Description: IC REG BUCK ADJ 3A 8SO
Synchronous Rectifier: Yes
Supplier Device Package: 8-SO-EP
Topology: Buck
Voltage - Input (Max): 23V
Frequency - Switching: 340kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 0.925V
Voltage - Input (Min): 4.7V
Voltage - Output (Max): 20V
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DESD1P0RFW-7 DESD1P0RFW-7 Diodes Incorporated DESD1P0RFW.pdf Description: TVS DIODE 70VWM 8VC SOT323
Capacitance @ Frequency: 1pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 8V
Unidirectional Channels: 1
Supplier Device Package: SOT-323
Voltage - Reverse Standoff (Typ): 70V (Max)
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
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DESD1P0RFWQ-7 DESD1P0RFWQ-7 Diodes Incorporated DESD1P0RFW.pdf Description: TVS DIODE 70VWM 8VC SOT323
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 8V
Unidirectional Channels: 1
Supplier Device Package: SOT-323
Voltage - Reverse Standoff (Typ): 70V (Max)
Qualification: AEC-Q101
Grade: Automotive
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Capacitance @ Frequency: 1pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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DMC2990UDJ-7 DMC2990UDJ-7 Diodes Incorporated DMC2990UDJ.pdf Description: MOSFET N/P-CH 20V 0.45A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA, 310mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
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DMG1029SV-7 DMG1029SV-7 Diodes Incorporated 31_dmg1029sv.pdf Description: MOSFET N/P-CH 60V 0.5A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
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AH1804-W-7 AH1804-W-7 Diodes Incorporated AH1804.pdf Description: MAGNETIC SWITCH OMNIPOLAR SC59
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DMN2075UDW-7 DMN2075UDW-7 Diodes Incorporated DMN2075UDW.pdf Description: MOSFET N-CH 20V 2.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
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AH1804-W-7 AH1804-W-7 Diodes Incorporated AH1804.pdf Description: MAGNETIC SWITCH OMNIPOLAR SC59
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AH1883-FJG-7 AH1883-FJG-7 Diodes Incorporated AH1883.pdf Description: MAGNETIC SWITCH OMNIPOLAR 3-UDFN
Packaging: Cut Tape (CT)
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DMN3029LFG-13 DMN3029LFG-13 Diodes Incorporated DMN3029LFG.pdf Description: MOSFET N-CH 30V 5.3A PWRDI333-8
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DMN3029LFG-13 DMN3029LFG-13 Diodes Incorporated DMN3029LFG.pdf Description: MOSFET N-CH 30V 5.3A PWRDI333-8
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DMN3029LFG-7 DMN3029LFG-7 Diodes Incorporated DMN3029LFG.pdf Description: MOSFET N-CH 30V 5.3A PWRDI333-8
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AP2337SA-7 AP2337SA-7 Diodes Incorporated AP2337.pdf Description: IC HOT SWAP CTRLR GP SOT23-3
Applications: General Purpose
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Hot Swap Controller
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: OVP, Thermal Limit, UVLO
Packaging: Cut Tape (CT)
Current - Supply: 65 µA
Number of Channels: 1
Supplier Device Package: SOT-23-3
Current - Output (Max): 1A
Internal Switch(s): Yes
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AP6502SP-13 AP6502SP-13 Diodes Incorporated AP6502.pdf Description: IC REG BUCK ADJ 2A 8SO
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 0.925V
Voltage - Input (Min): 4.7V
Voltage - Output (Max): 16V
Synchronous Rectifier: Yes
Supplier Device Package: 8-SO-EP
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 340kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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AP6503SP-13 AP6503SP-13 Diodes Incorporated AP6503.pdf Description: IC REG BUCK ADJ 3A 8SO
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 0.925V
Voltage - Input (Min): 4.7V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: 8-SO-EP
Topology: Buck
Voltage - Input (Max): 23V
Frequency - Switching: 340kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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DMC2990UDJ-7 DMC2990UDJ-7 Diodes Incorporated DMC2990UDJ.pdf Description: MOSFET N/P-CH 20V 0.45A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA, 310mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
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DMG1029SV-7 DMG1029SV-7 Diodes Incorporated 31_dmg1029sv.pdf Description: MOSFET N/P-CH 60V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
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DMN2075UDW-7 DMN2075UDW-7 Diodes Incorporated DMN2075UDW.pdf Description: MOSFET N-CH 20V 2.8A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
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DMP3105LVT-7 DMP3105LVT-7 Diodes Incorporated DMP3105LVT.pdf Description: MOSFET P-CH 30V 3.1A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V
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DSR6U600P5-13 DSR6U600P5-13 Diodes Incorporated DSR6U600P5.pdf Description: DIODE GEN PURP 600V 6A POWERDI5
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SBR30A45CTB SBR30A45CTB Diodes Incorporated SBR30A45CTB.pdf Description: DIODE ARR SBR 45V 15A TO263AB
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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SBR40U200CTB SBR40U200CTB Diodes Incorporated SBR40U200CTB.pdf Description: DIODE ARR SBR 200V 20A TO263AB
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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DMN62D0SFD-7 DMN62D0SFD-7 Diodes Incorporated DMN62D0SFD.pdf Description: MOSFET N-CH 60V 540MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 430mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
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DMP2018LFK-7 DMP2018LFK-7 Diodes Incorporated DMP2018LFK.pdf Description: MOSFET P-CH 20V 9.2A 6UDFN
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2523-6
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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DMS3016SFG-13 DMS3016SFG-13 Diodes Incorporated DMS3016SFG.pdf Description: MOSFET N-CH 30V 7A PWRDI3333-8
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DSR6U600P5-13 DSR6U600P5-13 Diodes Incorporated DSR6U600P5.pdf Description: DIODE GEN PURP 600V 6A POWERDI5
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DMS3016SFG-13 DMS3016SFG-13 Diodes Incorporated DMS3016SFG.pdf Description: MOSFET N-CH 30V 7A PWRDI3333-8
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DSR6U600P5-13 DSR6U600P5-13 Diodes Incorporated DSR6U600P5.pdf Description: DIODE GEN PURP 600V 6A POWERDI5
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DMN62D0SFD-7 DMN62D0SFD-7 Diodes Incorporated DMN62D0SFD.pdf Description: MOSFET N-CH 60V 540MA 3DFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 430mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
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DMP2018LFK-7 DMP2018LFK-7 Diodes Incorporated DMP2018LFK.pdf Description: MOSFET P-CH 20V 9.2A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2523-6
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
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DMP3105LVT-7 DMP3105LVT-7 Diodes Incorporated DMP3105LVT.pdf Description: MOSFET P-CH 30V 3.1A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V
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DMP58D0LFB-7B DMP58D0LFB-7B Diodes Incorporated DMP58D0LFB.pdf Description: MOSFET P-CH 50V 180MA 3-DFN
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DMP58D0LFB-7B DMP58D0LFB-7B Diodes Incorporated DMP58D0LFB.pdf Description: MOSFET P-CH 50V 180MA 3-DFN
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PI5PD2065UEEX PI5PD2065UEEX Diodes Incorporated PI5PD2061%2C2065.pdf Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-MSOP-EP
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 70mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMG4822SSD-13 DMG4822SSD.pdf
DMG4822SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMG6602SVT-7 DMG6602SVT.pdf
DMG6602SVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
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DMS3016SSSA-13 DMS3016SSSA.pdf
DMS3016SSSA-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 9.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.8A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Produkt ist nicht verfügbar
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DMN3110S-7 DMN3110S.pdf
DMN3110S-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
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DMG2307L-7 DMG2307L.pdf
DMG2307L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
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BC847BLP-7B BC847BLP.pdf
BC847BLP-7B
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.1A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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DMG4822SSD-13 DMG4822SSD.pdf
DMG4822SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMS3016SSSA-13 DMS3016SSSA.pdf
DMS3016SSSA-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 9.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.8A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Produkt ist nicht verfügbar
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DMG6602SVT-7 DMG6602SVT.pdf
DMG6602SVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
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BSN20-7 ds31898.pdf
BSN20-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
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DMN2990UDJ-7 DMN2990UDJ.pdf
DMN2990UDJ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.45A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
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DMN4031SSD-13 DMN4031SSD.pdf
DMN4031SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 5.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMG4511SK4-13 DMG4511SK4.pdf
DMG4511SK4-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 35V 5.3A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
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10+1.76 EUR
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DMN4800LSSL-13 DMN4800LSSL.pdf
DMN4800LSSL-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Power Dissipation (Max): 1.46W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
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15+1.21 EUR
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BC857BLP-7B ds30526.pdf
BC857BLP-7B
Hersteller: Diodes Incorporated
Description: TRANS PNP 45V 0.1A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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56+0.32 EUR
100+0.2 EUR
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DMC2038LVT-7 DMC2038LVT.pdf
DMC2038LVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 3.7A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
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DMC3021LK4-13 DMC3021LK4_Rev6-3_May2021.pdf
DMC3021LK4-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 9.4A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A, 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 751pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
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DMG1026UV-7 DMG1026UV.pdf
DMG1026UV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.41A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
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22+0.81 EUR
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PD10GE159 PD10GE159.pdf
PD10GE159
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 159.3750MHZ PECL SMD
auf Bestellung 999 Stücke:
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PD10GE156 PD-3.3V.pdf
PD10GE156
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 156.2500MHZ PECL SMD
Produkt ist nicht verfügbar
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PDGPON155 PD-3.3V.pdf
PDGPON155
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 155.5200MHZ PECL SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: PECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 80mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.053" (1.35mm)
Part Status: Active
Frequency: 155.52 MHz
Base Resonator: Crystal
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3+7.69 EUR
10+6.68 EUR
25+6.32 EUR
50+6.06 EUR
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250+5.49 EUR
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DMC2700UDM-7 DMC2700UDM.pdf
DMC2700UDM-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.34A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.12W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
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3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
21000+0.1 EUR
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DMC2700UDM-7 DMC2700UDM.pdf
DMC2700UDM-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.34A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.12W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 916292 Stücke:
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27+0.67 EUR
44+0.4 EUR
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AL8807W5-7
Hersteller: Diodes Incorporated
Description: IC LED DRIVER RGLTR PWM 1A SOT25
Part Status: Obsolete
Voltage - Supply (Max): 36V
Voltage - Supply (Min): 6V
Dimming: Analog, PWM
Supplier Device Package: SOT-25
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 1A (Switch)
Operating Temperature: -40°C ~ 125°C (TJ)
Type: DC DC Regulator
Frequency: 1MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AP2337SA-7 AP2337.pdf
AP2337SA-7
Hersteller: Diodes Incorporated
Description: IC HOT SWAP CTRLR GP SOT23-3
Operating Temperature: -40°C ~ 85°C
Type: Hot Swap Controller
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: OVP, Thermal Limit, UVLO
Packaging: Tape & Reel (TR)
Current - Supply: 65 µA
Number of Channels: 1
Supplier Device Package: SOT-23-3
Current - Output (Max): 1A
Internal Switch(s): Yes
Applications: General Purpose
Voltage - Supply: 2.7V ~ 5.5V
auf Bestellung 6000 Stücke:
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3000+0.19 EUR
6000+0.17 EUR
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AP6502SP-13 AP6502.pdf
AP6502SP-13
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 2A 8SO
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 0.925V
Voltage - Input (Min): 4.7V
Voltage - Output (Max): 16V
Synchronous Rectifier: Yes
Supplier Device Package: 8-SO-EP
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 340kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AP6503SP-13 AP6503.pdf
AP6503SP-13
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 3A 8SO
Synchronous Rectifier: Yes
Supplier Device Package: 8-SO-EP
Topology: Buck
Voltage - Input (Max): 23V
Frequency - Switching: 340kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 0.925V
Voltage - Input (Min): 4.7V
Voltage - Output (Max): 20V
Produkt ist nicht verfügbar
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DESD1P0RFW-7 DESD1P0RFW.pdf
DESD1P0RFW-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 70VWM 8VC SOT323
Capacitance @ Frequency: 1pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 8V
Unidirectional Channels: 1
Supplier Device Package: SOT-323
Voltage - Reverse Standoff (Typ): 70V (Max)
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Produkt ist nicht verfügbar
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DESD1P0RFWQ-7 DESD1P0RFW.pdf
DESD1P0RFWQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 70VWM 8VC SOT323
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 8V
Unidirectional Channels: 1
Supplier Device Package: SOT-323
Voltage - Reverse Standoff (Typ): 70V (Max)
Qualification: AEC-Q101
Grade: Automotive
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Capacitance @ Frequency: 1pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMC2990UDJ-7 DMC2990UDJ.pdf
DMC2990UDJ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.45A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA, 310mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
auf Bestellung 100000 Stücke:
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AnzahlPreis
10000+0.15 EUR
20000+0.14 EUR
50000+0.13 EUR
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DMG1029SV-7 31_dmg1029sv.pdf
DMG1029SV-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 0.5A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 258000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.2 EUR
6000+0.18 EUR
9000+0.17 EUR
15000+0.16 EUR
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AH1804-W-7 AH1804.pdf
AH1804-W-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SC59
Produkt ist nicht verfügbar
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DMN2075UDW-7 DMN2075UDW.pdf
DMN2075UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 2.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
Produkt ist nicht verfügbar
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AH1804-W-7 AH1804.pdf
AH1804-W-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SC59
Produkt ist nicht verfügbar
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AH1883-FJG-7 AH1883.pdf
AH1883-FJG-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR 3-UDFN
Packaging: Cut Tape (CT)
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16+1.16 EUR
20+0.89 EUR
25+0.76 EUR
50+0.74 EUR
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DMN3029LFG-13 DMN3029LFG.pdf
DMN3029LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A PWRDI333-8
Produkt ist nicht verfügbar
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DMN3029LFG-13 DMN3029LFG.pdf
DMN3029LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A PWRDI333-8
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DMN3029LFG-7 DMN3029LFG.pdf
DMN3029LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A PWRDI333-8
Produkt ist nicht verfügbar
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AP2337SA-7 AP2337.pdf
AP2337SA-7
Hersteller: Diodes Incorporated
Description: IC HOT SWAP CTRLR GP SOT23-3
Applications: General Purpose
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Hot Swap Controller
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: OVP, Thermal Limit, UVLO
Packaging: Cut Tape (CT)
Current - Supply: 65 µA
Number of Channels: 1
Supplier Device Package: SOT-23-3
Current - Output (Max): 1A
Internal Switch(s): Yes
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19+0.93 EUR
33+0.55 EUR
40+0.45 EUR
100+0.34 EUR
250+0.28 EUR
500+0.25 EUR
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AP6502SP-13 AP6502.pdf
AP6502SP-13
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 2A 8SO
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 0.925V
Voltage - Input (Min): 4.7V
Voltage - Output (Max): 16V
Synchronous Rectifier: Yes
Supplier Device Package: 8-SO-EP
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 340kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AP6503SP-13 AP6503.pdf
AP6503SP-13
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 3A 8SO
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 0.925V
Voltage - Input (Min): 4.7V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: 8-SO-EP
Topology: Buck
Voltage - Input (Max): 23V
Frequency - Switching: 340kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 1806 Stücke:
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5+3.68 EUR
10+2.31 EUR
25+1.94 EUR
100+1.54 EUR
250+1.34 EUR
500+1.21 EUR
1000+1.11 EUR
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DMC2990UDJ-7 DMC2990UDJ.pdf
DMC2990UDJ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.45A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA, 310mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
auf Bestellung 104061 Stücke:
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22+0.83 EUR
35+0.51 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.22 EUR
2000+0.2 EUR
5000+0.17 EUR
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DMG1029SV-7 31_dmg1029sv.pdf
DMG1029SV-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 259820 Stücke:
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AnzahlPreis
19+0.93 EUR
31+0.57 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
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DMN2075UDW-7 DMN2075UDW.pdf
DMN2075UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 2.8A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
auf Bestellung 2950 Stücke:
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AnzahlPreis
21+0.84 EUR
34+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.22 EUR
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DMP3105LVT-7 DMP3105LVT.pdf
DMP3105LVT-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.1A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V
auf Bestellung 12000 Stücke:
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AnzahlPreis
3000+0.15 EUR
6000+0.13 EUR
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DSR6U600P5-13 DSR6U600P5.pdf
DSR6U600P5-13
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 600V 6A POWERDI5
Produkt ist nicht verfügbar
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SBR30A45CTB SBR30A45CTB.pdf
SBR30A45CTB
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 45V 15A TO263AB
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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SBR40U200CTB SBR40U200CTB.pdf
SBR40U200CTB
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 200V 20A TO263AB
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 2750 Stücke:
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AnzahlPreis
6+3.2 EUR
50+2.56 EUR
100+2.11 EUR
500+1.79 EUR
1000+1.51 EUR
2000+1.44 EUR
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DMN62D0SFD-7 DMN62D0SFD.pdf
DMN62D0SFD-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 540MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 430mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
auf Bestellung 201000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
15000+0.11 EUR
30000+0.1 EUR
75000+0.093 EUR
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DMP2018LFK-7 DMP2018LFK.pdf
DMP2018LFK-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 9.2A 6UDFN
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2523-6
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 13500 Stücke:
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AnzahlPreis
3000+0.25 EUR
6000+0.23 EUR
9000+0.22 EUR
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DMS3016SFG-13 DMS3016SFG.pdf
DMS3016SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7A PWRDI3333-8
Produkt ist nicht verfügbar
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DSR6U600P5-13 DSR6U600P5.pdf
DSR6U600P5-13
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 600V 6A POWERDI5
Produkt ist nicht verfügbar
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DMS3016SFG-13 DMS3016SFG.pdf
DMS3016SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7A PWRDI3333-8
Produkt ist nicht verfügbar
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DSR6U600P5-13 DSR6U600P5.pdf
DSR6U600P5-13
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 600V 6A POWERDI5
Produkt ist nicht verfügbar
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DMN62D0SFD-7 DMN62D0SFD.pdf
DMN62D0SFD-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 540MA 3DFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 430mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
auf Bestellung 203071 Stücke:
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28+0.65 EUR
45+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
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DMP2018LFK-7 DMP2018LFK.pdf
DMP2018LFK-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 9.2A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2523-6
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
auf Bestellung 14342 Stücke:
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AnzahlPreis
17+1.09 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
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DMP3105LVT-7 DMP3105LVT.pdf
DMP3105LVT-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.1A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V
auf Bestellung 12629 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
25+0.7 EUR
42+0.42 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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DMP58D0LFB-7B DMP58D0LFB.pdf
DMP58D0LFB-7B
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA 3-DFN
Produkt ist nicht verfügbar
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DMP58D0LFB-7B DMP58D0LFB.pdf
DMP58D0LFB-7B
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA 3-DFN
Produkt ist nicht verfügbar
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PI5PD2065UEEX PI5PD2061%2C2065.pdf
PI5PD2065UEEX
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-MSOP-EP
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 70mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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