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AP64100SP-EVM Diodes Incorporated Description: EVAL BOARD FOR AP64100
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 1A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64100
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
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AP64102QSP-EVM Diodes Incorporated Description: EVAL BOARD FOR AP64102Q
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 1A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64102Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
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PT7C4363BZEEX PT7C4363BZEEX Diodes Incorporated PT7C4363B.pdf Description: IC RTC CLK/CALENDAR I2C 8TDFN
DigiKey Programmable: Not Verified
Part Status: Active
Current - Timekeeping (Max): 0.85µA ~ 0.9µA @ 3V ~ 5V
Supplier Device Package: 8-TDFN (2x3)
Date Format: YY-MM-DD-dd
Time Format: HH:MM:SS (24 hr)
Voltage - Supply: 1.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Clock/Calendar
Interface: I2C, 2-Wire Serial
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PT7C4363BZEEX PT7C4363BZEEX Diodes Incorporated PT7C4363B.pdf Description: IC RTC CLK/CALENDAR I2C 8TDFN
DigiKey Programmable: Not Verified
Part Status: Active
Current - Timekeeping (Max): 0.85µA ~ 0.9µA @ 3V ~ 5V
Supplier Device Package: 8-TDFN (2x3)
Date Format: YY-MM-DD-dd
Time Format: HH:MM:SS (24 hr)
Voltage - Supply: 1.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Clock/Calendar
Interface: I2C, 2-Wire Serial
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Features: Alarm, Leap Year, Square Wave Output
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AP62200WU-7-52 Diodes Incorporated AP62200_AP62201_AP62200T.pdf Description: DCDC Conv HV Buck TSOT26(STD) T&
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.2V
Voltage - Output (Max): 7V
Synchronous Rectifier: Yes
Supplier Device Package: TSOT-26
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 740kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Produkt ist nicht verfügbar
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SD24CQ-7 SD24CQ-7 Diodes Incorporated SD24CQ.pdf Description: TVS DIODE 24VWM 45VC SOD323
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 24pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 315W
Voltage - Clamping (Max) @ Ipp: 45V
Voltage - Breakdown (Min): 26.7V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Qualification: AEC-Q101
Grade: Automotive
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DFLZ3V3-7 Diodes Incorporated Description: DIODE ZENER 1W POWERDI123
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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SBRT3M30LP-7 SBRT3M30LP-7 Diodes Incorporated SBRT3M30LP.pdf Description: DIODE SBR 30V 3A U-DFN3030-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Super Barrier
Capacitance @ Vr, F: 100pF @ 30V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
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SBRT3M30LP-7 SBRT3M30LP-7 Diodes Incorporated SBRT3M30LP.pdf Description: DIODE SBR 30V 3A U-DFN3030-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Super Barrier
Capacitance @ Vr, F: 100pF @ 30V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
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DLLFSD01LPH4-7B DLLFSD01LPH4-7B Diodes Incorporated DLLFSD01LPH4.pdf Description: DIODE STD 80V 100MA X2DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
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DLLFSD01LPH4-7B DLLFSD01LPH4-7B Diodes Incorporated DLLFSD01LPH4.pdf Description: DIODE STD 80V 100MA X2DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
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173+0.1 EUR
197+0.089 EUR
235+0.075 EUR
258+0.068 EUR
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1000+0.061 EUR
2500+0.057 EUR
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LM2903QM8-13 LM2903QM8-13 Diodes Incorporated LM2901Q_03Q.pdf Description: IC COMPARATOR 2 DIFF 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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LM2903QM8-13 LM2903QM8-13 Diodes Incorporated LM2901Q_03Q.pdf Description: IC COMPARATOR 2 DIFF 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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106+0.17 EUR
120+0.15 EUR
141+0.13 EUR
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500+0.11 EUR
1000+0.1 EUR
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DMN10H220L-13 DMN10H220L-13 Diodes Incorporated DMN10H220L.pdf Description: MOSFET N-CH 100V 1.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Produkt ist nicht verfügbar
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PI6C5921512ZDIEX PI6C5921512ZDIEX Diodes Incorporated PI6C5921512.pdf Description: IC CLK BUFFER 2:12 1.5GHZ 40TQFN
Input: Differential or Single-Ended
Type: Fanout Buffer (Distribution)
Output: LVDS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 40-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Frequency - Max: 1.5 GHz
Part Status: Active
Supplier Device Package: 40-TQFN (6x6)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 2:12
Voltage - Supply: 2.375V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
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PI6C5921512ZDIEX PI6C5921512ZDIEX Diodes Incorporated PI6C5921512.pdf Description: IC CLK BUFFER 2:12 1.5GHZ 40TQFN
Frequency - Max: 1.5 GHz
Part Status: Active
Supplier Device Package: 40-TQFN (6x6)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 2:12
Voltage - Supply: 2.375V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Input: Differential or Single-Ended
Type: Fanout Buffer (Distribution)
Output: LVDS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 40-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
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250+6 EUR
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ZXMN2F34FHTA ZXMN2F34FHTA Diodes Incorporated ZXMN2F34FH.pdf Description: MOSFET N-CH 20V 3.4A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 277 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DMG3414UQ-7 DMG3414UQ-7 Diodes Incorporated DMG3414UQ.pdf Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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DMG3414UQ-7 DMG3414UQ-7 Diodes Incorporated DMG3414UQ.pdf Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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DMT10H015LCG-7 DMT10H015LCG-7 Diodes Incorporated DMT10H015LCG.pdf Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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DMT10H015LCG-7 DMT10H015LCG-7 Diodes Incorporated DMT10H015LCG.pdf Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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DMT10H009SPS-13 DMT10H009SPS-13 Diodes Incorporated DMT10H009SPS.pdf Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
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DMT10H009SPS-13 DMT10H009SPS-13 Diodes Incorporated DMT10H009SPS.pdf Description: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
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DMT10H009LCG-7 DMT10H009LCG-7 Diodes Incorporated DMT10H009LCG.pdf Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8 (Type B)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMT10H009LCG-7 DMT10H009LCG-7 Diodes Incorporated DMT10H009LCG.pdf Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8 (Type B)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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DMT10H014LSS-13 DMT10H014LSS-13 Diodes Incorporated DMT10H014LSS.pdf Description: MOSFET N-CH 100V 8.9A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
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DMT10H014LSS-13 DMT10H014LSS-13 Diodes Incorporated DMT10H014LSS.pdf Description: MOSFET N-CH 100V 8.9A 8SO
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
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DMT10H009LK3-13 DMT10H009LK3-13 Diodes Incorporated DMT10H009LK3.pdf Description: MOSFET BVDSS: 61V~100V TO252 T&R
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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DMT10H072LFDF-13 DMT10H072LFDF-13 Diodes Incorporated DMT10H072LFDF.pdf Description: MOSFET N-CH 100V 4A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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DMT10H072LFDFQ-13 DMT10H072LFDFQ-13 Diodes Incorporated DMT10H072LFDFQ.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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DMT10H052LFDF-13 DMT10H052LFDF-13 Diodes Incorporated DMT10H052LFDF.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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DMT10H025LSS-13 DMT10H025LSS-13 Diodes Incorporated DMT10H025LSS.pdf Description: MOSFET BVDSS: 61V~100V SO-8 T&R
Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DMT10H009SCG-7 DMT10H009SCG-7 Diodes Incorporated DMT10H009SCG.pdf Description: MOSFET BVDSS: 61V~100V V-DFN3333
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8 (Type B)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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DMT10H003SPSW-13 Diodes Incorporated DMT10H003SPSW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type Q)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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DMT10H032SFVW-7 DMT10H032SFVW-7 Diodes Incorporated DMT10H032SFVW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI33
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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DMT10H009SK3-13 DMT10H009SK3-13 Diodes Incorporated DMT10H009SK3.pdf Description: MOSFET BVDSS: 61V~100V TO252 T&R
Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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DMT10H032LSS-13 DMT10H032LSS-13 Diodes Incorporated DMT10H032LSS.pdf Description: MOSFET BVDSS: 61V~100V SO-8 T&R
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
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DMT10H032LFDF-7 DMT10H032LFDF-7 Diodes Incorporated DMT10H032LFDF.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
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DMT10H032LFDF-13 DMT10H032LFDF-13 Diodes Incorporated DMT10H032LFDF.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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DMT10H032SFVW-13 DMT10H032SFVW-13 Diodes Incorporated DMT10H032SFVW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI33
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
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DMT10H015SPS-13 DMT10H015SPS-13 Diodes Incorporated DMT10H015SPS.pdf Description: MOSFET N-CH 100V PWRDI5060
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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DMT10H015SK3-13 DMT10H015SK3-13 Diodes Incorporated DMT10H015SK3.pdf Description: MOSFET N-CH 100V 54A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
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DMT10H032LK3-13 DMT10H032LK3-13 Diodes Incorporated DMT10H032LK3.pdf Description: MOSFET BVDSS: 61V~100V TO252 T&R
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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DMT10H052LFDF-7 DMT10H052LFDF-7 Diodes Incorporated DMT10H052LFDF.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMT10H015LCG-13 DMT10H015LCG-13 Diodes Incorporated DMT10H015LCG.pdf Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMT10H009LFG-7 DMT10H009LFG-7 Diodes Incorporated DMT10H009LFG.pdf Description: MOSFET N-CH 100V 13A/50A PWRDI
Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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DMT10H4M5LPS-13 Diodes Incorporated DMT10H4M5LPS.pdf Description: MOSFET BVDSS: 61V-100V POWERDI50
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.3W (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
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DMT10H032LDV-13 DMT10H032LDV-13 Diodes Incorporated DMT10H032LDV.pdf Description: MOSFET 2N-CH 100V 18A PWRDI3333
Part Status: Active
Supplier Device Package: PowerDI3333-8 (Type UXC)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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DMT10H032LFVW-13 DMT10H032LFVW-13 Diodes Incorporated DMT10H032LFVW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI33
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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DMT10H009SSS-13 Diodes Incorporated DMT10H009SSS.pdf Description: MOSFET BVDSS: 61V-100V SO-8 T&R
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V
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DMT10H009LH3 Diodes Incorporated DMT10H009LH3.pdf Description: MOSFET N-CH 100V 84A TO251
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
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AP2210N-3.3TRG1-50 AP2210N-3.3TRG1-50 Diodes Incorporated AP2210.pdf Description: LDO CMOS LowCurr SOT23 T&R 3K
Voltage - Input (Max): 13.2V
Current - Quiescent (Iq): 180 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Supply (Max): 15 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 75dB (100Hz)
Part Status: Active
Control Features: Current Limit
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-23-3
Number of Regulators: 1
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SMBJ17A-13 SMBJ17A-13 Diodes Incorporated SMBJ5.0%28C%29A%7ESMBJ170%28C%29A.pdf Description: TVS DIODE 17VWM 27.6VC SMB
Unidirectional Channels: 1
Supplier Device Package: SMB
Voltage - Reverse Standoff (Typ): 17V
Current - Peak Pulse (10/1000µs): 21.7A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 27.6V
Voltage - Breakdown (Min): 18.9V
Produkt ist nicht verfügbar
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SMBJ17A-13-F SMBJ17A-13-F Diodes Incorporated ds19002.pdf Description: TVS DIODE 17V 27.6V SMB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 27.6V
Voltage - Breakdown (Min): 18.9V
Unidirectional Channels: 1
Supplier Device Package: SMB
Voltage - Reverse Standoff (Typ): 17V
Current - Peak Pulse (10/1000µs): 21.7A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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DMN10H170SFG-7 DMN10H170SFG-7 Diodes Incorporated DMN10H170SFG.pdf Description: MOSFET N-CH 100V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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DMN10H170SFG-7 DMN10H170SFG-7 Diodes Incorporated DMN10H170SFG.pdf Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
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AP1186K5-33G-13 AP1186K5-33G-13 Diodes Incorporated AP1186.pdf Description: IC REG LINEAR 3.3V 1.5A TO263-5
Current - Supply (Max): 150 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.38V @ 1.5A
PSRR: 70dB (120Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-263-5
Number of Regulators: 1
Voltage - Input (Max): 16V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 150°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GBP310 GBP310 Diodes Incorporated GBP306-GBP310.pdf Description: BRIDGE RECT 1PHASE 1KV 3A GBP
Packaging: Tube
Package / Case: 4-SIP, GBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBP
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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PI6C49X0202WIEX PI6C49X0202WIEX Diodes Incorporated PI6C49X0202.pdf Description: IC CLK BUFFER 1:2 250MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
Part Status: Active
Frequency - Max: 250 MHz
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PI6C49X0202WIEX PI6C49X0202WIEX Diodes Incorporated PI6C49X0202.pdf Description: IC CLK BUFFER 1:2 250MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
Part Status: Active
Frequency - Max: 250 MHz
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AP64100SP-EVM
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP64100
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 1A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64100
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
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AP64102QSP-EVM
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP64102Q
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 1A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64102Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
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PT7C4363BZEEX PT7C4363B.pdf
PT7C4363BZEEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8TDFN
DigiKey Programmable: Not Verified
Part Status: Active
Current - Timekeeping (Max): 0.85µA ~ 0.9µA @ 3V ~ 5V
Supplier Device Package: 8-TDFN (2x3)
Date Format: YY-MM-DD-dd
Time Format: HH:MM:SS (24 hr)
Voltage - Supply: 1.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Clock/Calendar
Interface: I2C, 2-Wire Serial
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PT7C4363BZEEX PT7C4363B.pdf
PT7C4363BZEEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8TDFN
DigiKey Programmable: Not Verified
Part Status: Active
Current - Timekeeping (Max): 0.85µA ~ 0.9µA @ 3V ~ 5V
Supplier Device Package: 8-TDFN (2x3)
Date Format: YY-MM-DD-dd
Time Format: HH:MM:SS (24 hr)
Voltage - Supply: 1.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Clock/Calendar
Interface: I2C, 2-Wire Serial
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Features: Alarm, Leap Year, Square Wave Output
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AP62200WU-7-52 AP62200_AP62201_AP62200T.pdf
Hersteller: Diodes Incorporated
Description: DCDC Conv HV Buck TSOT26(STD) T&
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.2V
Voltage - Output (Max): 7V
Synchronous Rectifier: Yes
Supplier Device Package: TSOT-26
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 740kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Produkt ist nicht verfügbar
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SD24CQ-7 SD24CQ.pdf
SD24CQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 45VC SOD323
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 24pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 315W
Voltage - Clamping (Max) @ Ipp: 45V
Voltage - Breakdown (Min): 26.7V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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DFLZ3V3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 1W POWERDI123
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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SBRT3M30LP-7 SBRT3M30LP.pdf
SBRT3M30LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 3A U-DFN3030-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Super Barrier
Capacitance @ Vr, F: 100pF @ 30V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
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3000+0.33 EUR
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SBRT3M30LP-7 SBRT3M30LP.pdf
SBRT3M30LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 3A U-DFN3030-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Super Barrier
Capacitance @ Vr, F: 100pF @ 30V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
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DLLFSD01LPH4-7B DLLFSD01LPH4.pdf
DLLFSD01LPH4-7B
Hersteller: Diodes Incorporated
Description: DIODE STD 80V 100MA X2DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
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10000+0.053 EUR
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DLLFSD01LPH4-7B DLLFSD01LPH4.pdf
DLLFSD01LPH4-7B
Hersteller: Diodes Incorporated
Description: DIODE STD 80V 100MA X2DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 21320 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
112+0.16 EUR
173+0.1 EUR
197+0.089 EUR
235+0.075 EUR
258+0.068 EUR
500+0.064 EUR
1000+0.061 EUR
2500+0.057 EUR
5000+0.055 EUR
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LM2903QM8-13 LM2901Q_03Q.pdf
LM2903QM8-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 DIFF 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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LM2903QM8-13 LM2901Q_03Q.pdf
LM2903QM8-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 DIFF 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1611 Stücke:
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AnzahlPreis
72+0.25 EUR
106+0.17 EUR
120+0.15 EUR
141+0.13 EUR
250+0.12 EUR
500+0.11 EUR
1000+0.1 EUR
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DMN10H220L-13 DMN10H220L.pdf
DMN10H220L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Produkt ist nicht verfügbar
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PI6C5921512ZDIEX PI6C5921512.pdf
PI6C5921512ZDIEX
Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 2:12 1.5GHZ 40TQFN
Input: Differential or Single-Ended
Type: Fanout Buffer (Distribution)
Output: LVDS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 40-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Frequency - Max: 1.5 GHz
Part Status: Active
Supplier Device Package: 40-TQFN (6x6)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 2:12
Voltage - Supply: 2.375V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
auf Bestellung 9000 Stücke:
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3000+5.49 EUR
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PI6C5921512ZDIEX PI6C5921512.pdf
PI6C5921512ZDIEX
Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 2:12 1.5GHZ 40TQFN
Frequency - Max: 1.5 GHz
Part Status: Active
Supplier Device Package: 40-TQFN (6x6)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 2:12
Voltage - Supply: 2.375V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Input: Differential or Single-Ended
Type: Fanout Buffer (Distribution)
Output: LVDS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 40-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 10284 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.72 EUR
10+7.47 EUR
25+6.91 EUR
100+6.29 EUR
250+6 EUR
500+5.82 EUR
1000+5.67 EUR
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ZXMN2F34FHTA ZXMN2F34FH.pdf
ZXMN2F34FHTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 277 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 112155 Stücke:
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AnzahlPreis
24+0.76 EUR
29+0.61 EUR
100+0.42 EUR
500+0.31 EUR
1000+0.24 EUR
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DMG3414UQ-7 DMG3414UQ.pdf
DMG3414UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.19 EUR
6000+0.17 EUR
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DMG3414UQ-7 DMG3414UQ.pdf
DMG3414UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8935 Stücke:
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AnzahlPreis
21+0.84 EUR
34+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
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DMT10H015LCG-7 DMT10H015LCG.pdf
DMT10H015LCG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
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AnzahlPreis
2000+0.57 EUR
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DMT10H015LCG-7 DMT10H015LCG.pdf
DMT10H015LCG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 3026 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.9 EUR
14+1.29 EUR
100+0.85 EUR
500+0.75 EUR
1000+0.68 EUR
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DMT10H009SPS-13 DMT10H009SPS.pdf
DMT10H009SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Produkt ist nicht verfügbar
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DMT10H009SPS-13 DMT10H009SPS.pdf
DMT10H009SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
auf Bestellung 544 Stücke:
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AnzahlPreis
8+2.36 EUR
12+1.49 EUR
100+0.99 EUR
500+0.77 EUR
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DMT10H009LCG-7 DMT10H009LCG.pdf
DMT10H009LCG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8 (Type B)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMT10H009LCG-7 DMT10H009LCG.pdf
DMT10H009LCG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8 (Type B)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 921 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.69 EUR
11+1.71 EUR
100+1.15 EUR
500+0.91 EUR
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DMT10H014LSS-13 DMT10H014LSS.pdf
DMT10H014LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.9A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 107500 Stücke:
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AnzahlPreis
2500+0.72 EUR
5000+0.67 EUR
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DMT10H014LSS-13 DMT10H014LSS.pdf
DMT10H014LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.9A 8SO
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
auf Bestellung 111690 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.18 EUR
12+1.53 EUR
100+1.14 EUR
500+0.9 EUR
1000+0.83 EUR
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DMT10H009LK3-13 DMT10H009LK3.pdf
DMT10H009LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1523 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.82 EUR
10+1.79 EUR
100+1.2 EUR
500+0.95 EUR
1000+0.87 EUR
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DMT10H072LFDF-13 DMT10H072LFDF.pdf
DMT10H072LFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 4A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMT10H072LFDFQ-13 DMT10H072LFDFQ.pdf
DMT10H072LFDFQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.29 EUR
Mindestbestellmenge: 10000 Stücke
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DMT10H052LFDF-13 DMT10H052LFDF.pdf
DMT10H052LFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMT10H025LSS-13 DMT10H025LSS.pdf
DMT10H025LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V SO-8 T&R
Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMT10H009SCG-7 DMT10H009SCG.pdf
DMT10H009SCG-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V V-DFN3333
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8 (Type B)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 22000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+0.58 EUR
4000+0.55 EUR
Mindestbestellmenge: 2000 Stücke
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DMT10H003SPSW-13 DMT10H003SPSW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type Q)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMT10H032SFVW-7 DMT10H032SFVW.pdf
DMT10H032SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+0.34 EUR
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DMT10H009SK3-13 DMT10H009SK3.pdf
DMT10H009SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.76 EUR
5000+0.72 EUR
Mindestbestellmenge: 2500 Stücke
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DMT10H032LSS-13 DMT10H032LSS.pdf
DMT10H032LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V SO-8 T&R
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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DMT10H032LFDF-7 DMT10H032LFDF.pdf
DMT10H032LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
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DMT10H032LFDF-13 DMT10H032LFDF.pdf
DMT10H032LFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMT10H032SFVW-13 DMT10H032SFVW.pdf
DMT10H032SFVW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.34 EUR
6000+0.32 EUR
9000+0.3 EUR
Mindestbestellmenge: 3000 Stücke
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DMT10H015SPS-13 DMT10H015SPS.pdf
DMT10H015SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.56 EUR
5000+0.54 EUR
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DMT10H015SK3-13 DMT10H015SK3.pdf
DMT10H015SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 54A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.61 EUR
Mindestbestellmenge: 2500 Stücke
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DMT10H032LK3-13 DMT10H032LK3.pdf
DMT10H032LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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DMT10H052LFDF-7 DMT10H052LFDF.pdf
DMT10H052LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMT10H015LCG-13 DMT10H015LCG.pdf
DMT10H015LCG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMT10H009LFG-7 DMT10H009LFG.pdf
DMT10H009LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 13A/50A PWRDI
Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+0.92 EUR
Mindestbestellmenge: 2000 Stücke
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DMT10H4M5LPS-13 DMT10H4M5LPS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V-100V POWERDI50
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.3W (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.56 EUR
5000+1.51 EUR
Mindestbestellmenge: 2500 Stücke
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DMT10H032LDV-13 DMT10H032LDV.pdf
DMT10H032LDV-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V 18A PWRDI3333
Part Status: Active
Supplier Device Package: PowerDI3333-8 (Type UXC)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMT10H032LFVW-13 DMT10H032LFVW.pdf
DMT10H032LFVW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMT10H009SSS-13 DMT10H009SSS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V-100V SO-8 T&R
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.74 EUR
5000+0.7 EUR
12500+0.67 EUR
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DMT10H009LH3 DMT10H009LH3.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 84A TO251
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
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AP2210N-3.3TRG1-50 AP2210.pdf
AP2210N-3.3TRG1-50
Hersteller: Diodes Incorporated
Description: LDO CMOS LowCurr SOT23 T&R 3K
Voltage - Input (Max): 13.2V
Current - Quiescent (Iq): 180 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Supply (Max): 15 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 75dB (100Hz)
Part Status: Active
Control Features: Current Limit
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Produkt ist nicht verfügbar
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SMBJ17A-13 SMBJ5.0%28C%29A%7ESMBJ170%28C%29A.pdf
SMBJ17A-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 17VWM 27.6VC SMB
Unidirectional Channels: 1
Supplier Device Package: SMB
Voltage - Reverse Standoff (Typ): 17V
Current - Peak Pulse (10/1000µs): 21.7A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 27.6V
Voltage - Breakdown (Min): 18.9V
Produkt ist nicht verfügbar
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SMBJ17A-13-F ds19002.pdf
SMBJ17A-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 17V 27.6V SMB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 27.6V
Voltage - Breakdown (Min): 18.9V
Unidirectional Channels: 1
Supplier Device Package: SMB
Voltage - Reverse Standoff (Typ): 17V
Current - Peak Pulse (10/1000µs): 21.7A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
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AnzahlPreis
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
15000+0.11 EUR
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DMN10H170SFG-7 DMN10H170SFG.pdf
DMN10H170SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 50000 Stücke:
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2000+0.32 EUR
6000+0.3 EUR
10000+0.28 EUR
50000+0.26 EUR
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DMN10H170SFG-7 DMN10H170SFG.pdf
DMN10H170SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
auf Bestellung 51045 Stücke:
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20+0.92 EUR
23+0.78 EUR
25+0.73 EUR
100+0.58 EUR
250+0.54 EUR
500+0.46 EUR
1000+0.35 EUR
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AP1186K5-33G-13 AP1186.pdf
AP1186K5-33G-13
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V 1.5A TO263-5
Current - Supply (Max): 150 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.38V @ 1.5A
PSRR: 70dB (120Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-263-5
Number of Regulators: 1
Voltage - Input (Max): 16V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 150°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GBP310 GBP306-GBP310.pdf
GBP310
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 3A GBP
Packaging: Tube
Package / Case: 4-SIP, GBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBP
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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13+1.43 EUR
35+0.7 EUR
105+0.58 EUR
525+0.44 EUR
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PI6C49X0202WIEX PI6C49X0202.pdf
PI6C49X0202WIEX
Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 1:2 250MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
Part Status: Active
Frequency - Max: 250 MHz
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PI6C49X0202WIEX PI6C49X0202.pdf
PI6C49X0202WIEX
Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 1:2 250MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
Part Status: Active
Frequency - Max: 250 MHz
auf Bestellung 39955 Stücke:
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3+6.3 EUR
10+4.15 EUR
25+3.59 EUR
100+2.96 EUR
250+2.66 EUR
500+2.47 EUR
1000+2.32 EUR
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