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FK2500022 FK2500022 Diodes Incorporated FK-3-3V.pdf Description: XTAL OSC XO 25.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 10mA
Height - Seated (Max): 0.045" (1.15mm)
Part Status: Active
Frequency: 25 MHz
Base Resonator: Crystal
Supplier Device Package: 4-VDFN (3.2x2.5)
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11+1.64 EUR
50+1.49 EUR
100+1.43 EUR
500+1.29 EUR
1000+1.24 EUR
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AP7173-SPG-13 AP7173-SPG-13 Diodes Incorporated AP7173.pdf Description: IC REG LIN POS ADJ 1.5A 8-SO-EP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-SO-EP
Voltage - Output (Max): 3.3V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good, Soft Start
Part Status: Active
PSRR: 60dB ~ 30dB (1kHz ~ 300kHz)
Voltage Dropout (Max): 1.7V @ 1.5A
Protection Features: Over Current, Over Temperature
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5000+0.76 EUR
7500+0.74 EUR
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AP7173-SPG-13 AP7173-SPG-13 Diodes Incorporated AP7173.pdf Description: IC REG LIN POS ADJ 1.5A 8-SO-EP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-SO-EP
Voltage - Output (Max): 3.3V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good, Soft Start
Part Status: Active
PSRR: 60dB ~ 30dB (1kHz ~ 300kHz)
Voltage Dropout (Max): 1.7V @ 1.5A
Protection Features: Over Current, Over Temperature
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10+1.94 EUR
25+1.63 EUR
100+1.28 EUR
250+1.11 EUR
500+1 EUR
1000+0.91 EUR
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AP2191DSG-13 AP2191DSG-13 Diodes Incorporated AP2181D_91D.pdf Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Packaging: Tape & Reel (TR)
Features: Load Discharge, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
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AP2191DSG-13 AP2191DSG-13 Diodes Incorporated AP2181D_91D.pdf Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Packaging: Cut Tape (CT)
Features: Load Discharge, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
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100+0.81 EUR
250+0.75 EUR
500+0.64 EUR
1000+0.51 EUR
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AP2191MPG-13 AP2191MPG-13 Diodes Incorporated AP2181_91.pdf Description: IC PWR SWITCH P-CHAN 1:1 8MSOP
Packaging: Cut Tape (CT)
Features: Status Flag
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP-EP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
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11+1.63 EUR
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AP2161DWG-7 AP2161DWG-7 Diodes Incorporated AP2161D_71D.pdf Description: IC PWR SWITCH P-CHAN 1:1 SOT25
Packaging: Tape & Reel (TR)
Features: Load Discharge, Status Flag
Package / Case: SC-74A, SOT-753
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-25
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
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6000+0.22 EUR
15000+0.2 EUR
30000+0.19 EUR
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AP2161DWG-7 AP2161DWG-7 Diodes Incorporated AP2161D_71D.pdf Description: IC PWR SWITCH P-CHAN 1:1 SOT25
Packaging: Cut Tape (CT)
Features: Load Discharge, Status Flag
Package / Case: SC-74A, SOT-753
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-25
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
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34+0.52 EUR
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250+0.39 EUR
500+0.33 EUR
1000+0.25 EUR
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BAS16-7 BAS16-7 Diodes Incorporated BAS16_MMBD4148_MMBD914.pdf Description: DIODE GEN PURP 75V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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BAS16-7 BAS16-7 Diodes Incorporated BAS16_MMBD4148_MMBD914.pdf Description: DIODE GEN PURP 75V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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BAS16-7-G Diodes Incorporated Description: DIODE GEN PURP SOT23-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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SMF4L24A-7 SMF4L24A-7 Diodes Incorporated SMF4L5.0CA-SMF4L200CA.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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SMF4L24A-7 SMF4L24A-7 Diodes Incorporated SMF4L5.0CA-SMF4L200CA.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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25+0.72 EUR
33+0.55 EUR
100+0.34 EUR
500+0.23 EUR
1000+0.18 EUR
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SMF4L70A-7 SMF4L70A-7 Diodes Incorporated SMF4L5.0CA-SMF4L200CA.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMF4L70A-7 SMF4L70A-7 Diodes Incorporated SMF4L5.0CA-SMF4L200CA.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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32+0.55 EUR
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500+0.24 EUR
1000+0.18 EUR
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3.0SMCJ26AQ 3.0SMCJ26AQ Diodes Incorporated ds40742.pdf Description: TVS DIODE 26VWM 42.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 71.3A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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3.0SMCJ26AQ 3.0SMCJ26AQ Diodes Incorporated ds40742.pdf Description: TVS DIODE 26VWM 42.1VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 71.3A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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6+3.08 EUR
10+1.97 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.96 EUR
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US3840017 US3840017 Diodes Incorporated US-USQ.pdf Description: CRYSTAL CERAMIC SEAM1612 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 105°C
Frequency Stability: ±35ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
ESR (Equivalent Series Resistance): 54 Ohms
Frequency: 38.4 MHz
Produkt ist nicht verfügbar
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DMT3009UDT-7 Diodes Incorporated DMT3009UDT.pdf Description: MOSFET 2N-CH 30V 10.6A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta), 16W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 894pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type KS)
Part Status: Active
Produkt ist nicht verfügbar
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MBR2060CT-LS Diodes Incorporated MBR2060CT_LS.pdf Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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MBR2060CT_HF Diodes Incorporated MBR2060CT_LS.pdf Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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AP64100SP-EVM Diodes Incorporated Description: EVAL BOARD FOR AP64100
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 1A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64100
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
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AP64102QSP-EVM Diodes Incorporated Description: EVAL BOARD FOR AP64102Q
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 1A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64102Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
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PT7C4363BZEEX PT7C4363BZEEX Diodes Incorporated PT7C4363B.pdf Description: IC RTC CLK/CALENDAR I2C 8TDFN
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TDFN (2x3)
Current - Timekeeping (Max): 0.85µA ~ 0.9µA @ 3V ~ 5V
Part Status: Active
DigiKey Programmable: Not Verified
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3000+1.11 EUR
6000+1.05 EUR
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PT7C4363BZEEX PT7C4363BZEEX Diodes Incorporated PT7C4363B.pdf Description: IC RTC CLK/CALENDAR I2C 8TDFN
Features: Alarm, Leap Year, Square Wave Output
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TDFN (2x3)
Current - Timekeeping (Max): 0.85µA ~ 0.9µA @ 3V ~ 5V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7784 Stücke:
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7+2.6 EUR
10+2.34 EUR
25+2.22 EUR
100+1.82 EUR
250+1.7 EUR
500+1.5 EUR
1000+1.19 EUR
Mindestbestellmenge: 7
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AP62200WU-7-52 Diodes Incorporated AP62200_AP62201_AP62200T.pdf Description: DCDC Conv HV Buck TSOT26(STD) T&
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 740kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: TSOT-26
Synchronous Rectifier: Yes
Voltage - Output (Max): 7V
Voltage - Input (Min): 4.2V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
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SD24CQ-7 SD24CQ-7 Diodes Incorporated SD24CQ.pdf Description: TVS DIODE 24VWM 45VC SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 24pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 315W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DFLZ3V3-7 Diodes Incorporated Description: DIODE ZENER 1W POWERDI123
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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SBRT3M30LP-7 SBRT3M30LP-7 Diodes Incorporated SBRT3M30LP.pdf Description: DIODE SBR 30V 3A U-DFN3030-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Super Barrier
Capacitance @ Vr, F: 100pF @ 30V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
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SBRT3M30LP-7 SBRT3M30LP-7 Diodes Incorporated SBRT3M30LP.pdf Description: DIODE SBR 30V 3A U-DFN3030-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Super Barrier
Capacitance @ Vr, F: 100pF @ 30V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
auf Bestellung 7866 Stücke:
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DLLFSD01LPH4-7B DLLFSD01LPH4-7B Diodes Incorporated DLLFSD01LPH4.pdf Description: DIODE STD 80V 100MA X2DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
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50000+0.059 EUR
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DLLFSD01LPH4-7B DLLFSD01LPH4-7B Diodes Incorporated DLLFSD01LPH4.pdf Description: DIODE STD 80V 100MA X2DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 232639 Stücke:
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36+0.49 EUR
63+0.28 EUR
76+0.23 EUR
103+0.17 EUR
250+0.14 EUR
500+0.12 EUR
1000+0.11 EUR
2500+0.092 EUR
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LM2903QM8-13 LM2903QM8-13 Diodes Incorporated LM2901Q_03Q.pdf Description: IC COMPARATOR 2 DIFF 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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LM2903QM8-13 LM2903QM8-13 Diodes Incorporated LM2901Q_03Q.pdf Description: IC COMPARATOR 2 DIFF 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1972 Stücke:
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42+0.43 EUR
51+0.35 EUR
100+0.26 EUR
250+0.22 EUR
500+0.19 EUR
1000+0.17 EUR
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DMN10H220L-13 DMN10H220L-13 Diodes Incorporated DMN10H220L.pdf Description: MOSFET N-CH 100V 1.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
auf Bestellung 80000 Stücke:
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20+0.88 EUR
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PI6C5921512ZDIEX PI6C5921512ZDIEX Diodes Incorporated PI6C5921512.pdf Description: IC CLK BUFFER 2:12 1.5GHZ 40TQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: Differential or Single-Ended
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 2:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 40-TQFN (6x6)
Part Status: Active
Frequency - Max: 1.5 GHz
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PI6C5921512ZDIEX PI6C5921512ZDIEX Diodes Incorporated PI6C5921512.pdf Description: IC CLK BUFFER 2:12 1.5GHZ 40TQFN
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: Differential or Single-Ended
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 2:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 40-TQFN (6x6)
Part Status: Active
Frequency - Max: 1.5 GHz
auf Bestellung 2568 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.67 EUR
10+9.63 EUR
25+9.19 EUR
100+7.98 EUR
250+7.62 EUR
500+6.95 EUR
1000+6.05 EUR
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ZXMN2F34FHTA ZXMN2F34FHTA Diodes Incorporated ZXMN2F34FH.pdf Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 277 pF @ 10 V
auf Bestellung 112155 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
29+0.61 EUR
100+0.42 EUR
500+0.31 EUR
1000+0.24 EUR
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DMG3414UQ-7 DMG3414UQ-7 Diodes Incorporated DMG3414UQ.pdf Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMG3414UQ-7 DMG3414UQ-7 Diodes Incorporated DMG3414UQ.pdf Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2820 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
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DMT10H015LCG-7 DMT10H015LCG-7 Diodes Incorporated DMT10H015LCG.pdf Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: V-DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.61 EUR
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DMT10H015LCG-7 DMT10H015LCG-7 Diodes Incorporated DMT10H015LCG.pdf Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: V-DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 3536 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.11 EUR
13+1.41 EUR
100+0.93 EUR
500+0.78 EUR
1000+0.71 EUR
Mindestbestellmenge: 9
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DMT10H009SPS-13 DMT10H009SPS-13 Diodes Incorporated DMT10H009SPS.pdf Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
auf Bestellung 110000 Stücke:
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2500+0.64 EUR
5000+0.59 EUR
7500+0.58 EUR
Mindestbestellmenge: 2500
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DMT10H009SPS-13 DMT10H009SPS-13 Diodes Incorporated DMT10H009SPS.pdf Description: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
auf Bestellung 112318 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.24 EUR
12+1.48 EUR
100+1.01 EUR
500+0.79 EUR
1000+0.72 EUR
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DMT10H009LCG-7 DMT10H009LCG-7 Diodes Incorporated DMT10H009LCG.pdf Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Produkt ist nicht verfügbar
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DMT10H009LCG-7 DMT10H009LCG-7 Diodes Incorporated DMT10H009LCG.pdf Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 1468 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.82 EUR
10+1.83 EUR
100+1.23 EUR
500+0.97 EUR
1000+0.89 EUR
Mindestbestellmenge: 7
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DMT10H014LSS-13 DMT10H014LSS-13 Diodes Incorporated DMT10H014LSS.pdf Description: MOSFET N-CH 100V 8.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.78 EUR
5000+0.72 EUR
Mindestbestellmenge: 2500
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DMT10H014LSS-13 DMT10H014LSS-13 Diodes Incorporated DMT10H014LSS.pdf Description: MOSFET N-CH 100V 8.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 111695 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.68 EUR
11+1.74 EUR
100+1.18 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 7
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DMT10H009LK3-13 DMT10H009LK3-13 Diodes Incorporated DMT10H009LK3.pdf Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 1935612 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.85 EUR
10+1.81 EUR
100+1.21 EUR
500+0.96 EUR
1000+0.88 EUR
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DMT10H072LFDF-13 DMT10H072LFDF-13 Diodes Incorporated DMT10H072LFDF.pdf Description: MOSFET N-CH 100V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
Produkt ist nicht verfügbar
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DMT10H072LFDFQ-13 DMT10H072LFDFQ-13 Diodes Incorporated DMT10H072LFDFQ.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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DMT10H052LFDF-13 DMT10H052LFDF-13 Diodes Incorporated DMT10H052LFDF.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Produkt ist nicht verfügbar
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DMT10H025LSS-13 DMT10H025LSS-13 Diodes Incorporated DMT10H025LSS.pdf Description: MOSFET BVDSS: 61V~100V SO-8 T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V
Produkt ist nicht verfügbar
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DMT10H009SCG-7 DMT10H009SCG-7 Diodes Incorporated DMT10H009SCG.pdf Description: MOSFET BVDSS: 61V~100V V-DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
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DMT10H003SPSW-13 Diodes Incorporated DMT10H003SPSW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V
Produkt ist nicht verfügbar
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DMT10H032SFVW-7 DMT10H032SFVW-7 Diodes Incorporated DMT10H032SFVW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
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DMT10H009SK3-13 DMT10H009SK3-13 Diodes Incorporated DMT10H009SK3.pdf Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 50 V
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DMT10H032LSS-13 DMT10H032LSS-13 Diodes Incorporated DMT10H032LSS.pdf Description: MOSFET BVDSS: 61V~100V SO-8 T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
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DMT10H032LFDF-7 DMT10H032LFDF-7 Diodes Incorporated DMT10H032LFDF.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
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DMT10H032LFDF-13 DMT10H032LFDF-13 Diodes Incorporated DMT10H032LFDF.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
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FK2500022 FK-3-3V.pdf
FK2500022
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 25.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 10mA
Height - Seated (Max): 0.045" (1.15mm)
Part Status: Active
Frequency: 25 MHz
Base Resonator: Crystal
Supplier Device Package: 4-VDFN (3.2x2.5)
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AP7173-SPG-13 AP7173.pdf
AP7173-SPG-13
Hersteller: Diodes Incorporated
Description: IC REG LIN POS ADJ 1.5A 8-SO-EP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-SO-EP
Voltage - Output (Max): 3.3V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good, Soft Start
Part Status: Active
PSRR: 60dB ~ 30dB (1kHz ~ 300kHz)
Voltage Dropout (Max): 1.7V @ 1.5A
Protection Features: Over Current, Over Temperature
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AP7173-SPG-13 AP7173.pdf
AP7173-SPG-13
Hersteller: Diodes Incorporated
Description: IC REG LIN POS ADJ 1.5A 8-SO-EP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-SO-EP
Voltage - Output (Max): 3.3V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good, Soft Start
Part Status: Active
PSRR: 60dB ~ 30dB (1kHz ~ 300kHz)
Voltage Dropout (Max): 1.7V @ 1.5A
Protection Features: Over Current, Over Temperature
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6+3.13 EUR
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AP2191DSG-13 AP2181D_91D.pdf
AP2191DSG-13
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Packaging: Tape & Reel (TR)
Features: Load Discharge, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
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2500+0.46 EUR
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AP2191DSG-13 AP2181D_91D.pdf
AP2191DSG-13
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Packaging: Cut Tape (CT)
Features: Load Discharge, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
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AP2191MPG-13 AP2181_91.pdf
AP2191MPG-13
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 8MSOP
Packaging: Cut Tape (CT)
Features: Status Flag
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP-EP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
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10+1.81 EUR
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AP2161DWG-7 AP2161D_71D.pdf
AP2161DWG-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 SOT25
Packaging: Tape & Reel (TR)
Features: Load Discharge, Status Flag
Package / Case: SC-74A, SOT-753
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-25
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
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3000+0.23 EUR
6000+0.22 EUR
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AP2161DWG-7 AP2161D_71D.pdf
AP2161DWG-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 SOT25
Packaging: Cut Tape (CT)
Features: Load Discharge, Status Flag
Package / Case: SC-74A, SOT-753
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-25
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
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27+0.67 EUR
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BAS16-7 BAS16_MMBD4148_MMBD914.pdf
BAS16-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 75V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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BAS16-7 BAS16_MMBD4148_MMBD914.pdf
BAS16-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 75V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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BAS16-7-G
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP SOT23-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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SMF4L24A-7 SMF4L5.0CA-SMF4L200CA.pdf
SMF4L24A-7
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
Mindestbestellmenge: 3000
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SMF4L24A-7 SMF4L5.0CA-SMF4L200CA.pdf
SMF4L24A-7
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
33+0.55 EUR
100+0.34 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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SMF4L70A-7 SMF4L5.0CA-SMF4L200CA.pdf
SMF4L70A-7
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMF4L70A-7 SMF4L5.0CA-SMF4L200CA.pdf
SMF4L70A-7
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
32+0.55 EUR
100+0.34 EUR
500+0.24 EUR
1000+0.18 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
3.0SMCJ26AQ ds40742.pdf
3.0SMCJ26AQ
Hersteller: Diodes Incorporated
Description: TVS DIODE 26VWM 42.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 71.3A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.85 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
3.0SMCJ26AQ ds40742.pdf
3.0SMCJ26AQ
Hersteller: Diodes Incorporated
Description: TVS DIODE 26VWM 42.1VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 71.3A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
10+1.97 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.96 EUR
Mindestbestellmenge: 6
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US3840017 US-USQ.pdf
US3840017
Hersteller: Diodes Incorporated
Description: CRYSTAL CERAMIC SEAM1612 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 105°C
Frequency Stability: ±35ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
ESR (Equivalent Series Resistance): 54 Ohms
Frequency: 38.4 MHz
Produkt ist nicht verfügbar
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DMT3009UDT-7 DMT3009UDT.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10.6A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta), 16W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 894pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type KS)
Part Status: Active
Produkt ist nicht verfügbar
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MBR2060CT-LS MBR2060CT_LS.pdf
Hersteller: Diodes Incorporated
Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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MBR2060CT_HF MBR2060CT_LS.pdf
Hersteller: Diodes Incorporated
Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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AP64100SP-EVM
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP64100
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 1A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64100
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AP64102QSP-EVM
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP64102Q
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 1A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64102Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
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PT7C4363BZEEX PT7C4363B.pdf
PT7C4363BZEEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8TDFN
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TDFN (2x3)
Current - Timekeeping (Max): 0.85µA ~ 0.9µA @ 3V ~ 5V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.11 EUR
6000+1.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PT7C4363BZEEX PT7C4363B.pdf
PT7C4363BZEEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8TDFN
Features: Alarm, Leap Year, Square Wave Output
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TDFN (2x3)
Current - Timekeeping (Max): 0.85µA ~ 0.9µA @ 3V ~ 5V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7784 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.6 EUR
10+2.34 EUR
25+2.22 EUR
100+1.82 EUR
250+1.7 EUR
500+1.5 EUR
1000+1.19 EUR
Mindestbestellmenge: 7
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AP62200WU-7-52 AP62200_AP62201_AP62200T.pdf
Hersteller: Diodes Incorporated
Description: DCDC Conv HV Buck TSOT26(STD) T&
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 740kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: TSOT-26
Synchronous Rectifier: Yes
Voltage - Output (Max): 7V
Voltage - Input (Min): 4.2V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
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SD24CQ-7 SD24CQ.pdf
SD24CQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 45VC SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 24pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 315W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DFLZ3V3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 1W POWERDI123
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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SBRT3M30LP-7 SBRT3M30LP.pdf
SBRT3M30LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 3A U-DFN3030-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Super Barrier
Capacitance @ Vr, F: 100pF @ 30V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.33 EUR
6000+0.32 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SBRT3M30LP-7 SBRT3M30LP.pdf
SBRT3M30LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 3A U-DFN3030-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Super Barrier
Capacitance @ Vr, F: 100pF @ 30V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
auf Bestellung 7866 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
24+0.76 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.41 EUR
Mindestbestellmenge: 16
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DLLFSD01LPH4-7B DLLFSD01LPH4.pdf
DLLFSD01LPH4-7B
Hersteller: Diodes Incorporated
Description: DIODE STD 80V 100MA X2DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 230000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.074 EUR
20000+0.066 EUR
30000+0.063 EUR
50000+0.059 EUR
70000+0.056 EUR
100000+0.054 EUR
Mindestbestellmenge: 10000
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DLLFSD01LPH4-7B DLLFSD01LPH4.pdf
DLLFSD01LPH4-7B
Hersteller: Diodes Incorporated
Description: DIODE STD 80V 100MA X2DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 232639 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
63+0.28 EUR
76+0.23 EUR
103+0.17 EUR
250+0.14 EUR
500+0.12 EUR
1000+0.11 EUR
2500+0.092 EUR
5000+0.082 EUR
Mindestbestellmenge: 36
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LM2903QM8-13 LM2901Q_03Q.pdf
LM2903QM8-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 DIFF 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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LM2903QM8-13 LM2901Q_03Q.pdf
LM2903QM8-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 DIFF 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1972 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
42+0.43 EUR
51+0.35 EUR
100+0.26 EUR
250+0.22 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 25
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DMN10H220L-13 DMN10H220L.pdf
DMN10H220L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
Mindestbestellmenge: 20
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PI6C5921512ZDIEX PI6C5921512.pdf
PI6C5921512ZDIEX
Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 2:12 1.5GHZ 40TQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: Differential or Single-Ended
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 2:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 40-TQFN (6x6)
Part Status: Active
Frequency - Max: 1.5 GHz
Produkt ist nicht verfügbar
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PI6C5921512ZDIEX PI6C5921512.pdf
PI6C5921512ZDIEX
Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 2:12 1.5GHZ 40TQFN
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: Differential or Single-Ended
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 2:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 40-TQFN (6x6)
Part Status: Active
Frequency - Max: 1.5 GHz
auf Bestellung 2568 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.67 EUR
10+9.63 EUR
25+9.19 EUR
100+7.98 EUR
250+7.62 EUR
500+6.95 EUR
1000+6.05 EUR
Mindestbestellmenge: 2
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ZXMN2F34FHTA ZXMN2F34FH.pdf
ZXMN2F34FHTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 277 pF @ 10 V
auf Bestellung 112155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
29+0.61 EUR
100+0.42 EUR
500+0.31 EUR
1000+0.24 EUR
Mindestbestellmenge: 24
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DMG3414UQ-7 DMG3414UQ.pdf
DMG3414UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMG3414UQ-7 DMG3414UQ.pdf
DMG3414UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
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DMT10H015LCG-7 DMT10H015LCG.pdf
DMT10H015LCG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: V-DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.61 EUR
Mindestbestellmenge: 2000
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DMT10H015LCG-7 DMT10H015LCG.pdf
DMT10H015LCG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: V-DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 3536 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.11 EUR
13+1.41 EUR
100+0.93 EUR
500+0.78 EUR
1000+0.71 EUR
Mindestbestellmenge: 9
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DMT10H009SPS-13 DMT10H009SPS.pdf
DMT10H009SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
auf Bestellung 110000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.64 EUR
5000+0.59 EUR
7500+0.58 EUR
Mindestbestellmenge: 2500
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DMT10H009SPS-13 DMT10H009SPS.pdf
DMT10H009SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
auf Bestellung 112318 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
12+1.48 EUR
100+1.01 EUR
500+0.79 EUR
1000+0.72 EUR
Mindestbestellmenge: 8
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DMT10H009LCG-7 DMT10H009LCG.pdf
DMT10H009LCG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Produkt ist nicht verfügbar
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DMT10H009LCG-7 DMT10H009LCG.pdf
DMT10H009LCG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 1468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.82 EUR
10+1.83 EUR
100+1.23 EUR
500+0.97 EUR
1000+0.89 EUR
Mindestbestellmenge: 7
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DMT10H014LSS-13 DMT10H014LSS.pdf
DMT10H014LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.78 EUR
5000+0.72 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMT10H014LSS-13 DMT10H014LSS.pdf
DMT10H014LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 111695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
11+1.74 EUR
100+1.18 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 7
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DMT10H009LK3-13 DMT10H009LK3.pdf
DMT10H009LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 1935612 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+1.81 EUR
100+1.21 EUR
500+0.96 EUR
1000+0.88 EUR
Mindestbestellmenge: 7
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DMT10H072LFDF-13 DMT10H072LFDF.pdf
DMT10H072LFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
Produkt ist nicht verfügbar
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DMT10H072LFDFQ-13 DMT10H072LFDFQ.pdf
DMT10H072LFDFQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.29 EUR
Mindestbestellmenge: 10000
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DMT10H052LFDF-13 DMT10H052LFDF.pdf
DMT10H052LFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Produkt ist nicht verfügbar
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DMT10H025LSS-13 DMT10H025LSS.pdf
DMT10H025LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V SO-8 T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V
Produkt ist nicht verfügbar
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DMT10H009SCG-7 DMT10H009SCG.pdf
DMT10H009SCG-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V V-DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
auf Bestellung 22000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.58 EUR
4000+0.55 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
DMT10H003SPSW-13 DMT10H003SPSW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V
Produkt ist nicht verfügbar
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DMT10H032SFVW-7 DMT10H032SFVW.pdf
DMT10H032SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.3 EUR
4000+0.29 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
DMT10H009SK3-13 DMT10H009SK3.pdf
DMT10H009SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.76 EUR
5000+0.72 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMT10H032LSS-13 DMT10H032LSS.pdf
DMT10H032LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V SO-8 T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
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DMT10H032LFDF-7 DMT10H032LFDF.pdf
DMT10H032LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.43 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMT10H032LFDF-13 DMT10H032LFDF.pdf
DMT10H032LFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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