Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74206) > Seite 537 nach 1237
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DMP2170U-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 3.1A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4642470 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H700S-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 700MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V FET Feature: Standard Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V |
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DMN10H700S-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 700MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V FET Feature: Standard Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V |
auf Bestellung 9976 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3042L-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 5.8A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V |
auf Bestellung 2030000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3042L-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 5.8A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V |
auf Bestellung 2046277 Stücke: Lieferzeit 10-14 Tag (e) |
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| WX5012D0125.000000 | Diodes Incorporated |
Description: XO OSCILLATOR SMD Packaging: Tape & Reel (TR) Part Status: Obsolete |
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PI7C9X3G816GPBHFCE | Diodes Incorporated |
Description: PACKET SWITCH H-FCBGA190190-324Packaging: Tray Package / Case: 324-BFBGA, FCBGA Mounting Type: Surface Mount Interface: I2C, JTAG, PCI Express, Serial, SMBus Voltage - Supply: 0.9V ~ 0.99V Applications: Packet Switch, 8-Port/16-Lane Supplier Device Package: 324-HFCBGA (19x19) Part Status: Active |
auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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DML3012LDC-7A | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V V-DFN3030-1Packaging: Tape & Reel (TR) Features: Power Good, Slew Rate Controlled Package / Case: 12-VFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 4.8mOhm Input Type: Non-Inverting Voltage - Load: 0.5V ~ 20V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-12 (Type B) Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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DML3012LDC-7A | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V V-DFN3030-1Packaging: Cut Tape (CT) Features: Power Good, Slew Rate Controlled Package / Case: 12-VFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 4.8mOhm Input Type: Non-Inverting Voltage - Load: 0.5V ~ 20V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-12 (Type B) Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 122 Stücke: Lieferzeit 10-14 Tag (e) |
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DML1008LDS-7 | Diodes Incorporated |
Description: IC PWR SWITCH N-CHAN 1:1 8VDFNPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 8mOhm (Max) Voltage - Load: 3.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-8 (Type R) Part Status: Active |
Produkt ist nicht verfügbar |
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DML1008LDS-7 | Diodes Incorporated |
Description: IC PWR SWITCH N-CHAN 1:1 8VDFNPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 8mOhm (Max) Voltage - Load: 3.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-8 (Type R) Part Status: Active |
auf Bestellung 2830 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3007SCG-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 50A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3333-8 (Type B) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3007SCG-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 50A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3333-8 (Type B) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V |
auf Bestellung 18453 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP6A17GQTA-52 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SOT223 T&RPackaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V |
Produkt ist nicht verfügbar |
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| ZXMP6A17GTA-52 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SOT223 T&RPackaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V |
Produkt ist nicht verfügbar |
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DMN6068SEQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SOT223 T&RPackaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 638497 Stücke: Lieferzeit 10-14 Tag (e) |
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D2V5L1BS2LP3-7 | Diodes Incorporated |
Description: TVS DIODE 2.5VWM 6V X3DFN06032Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Current - Peak Pulse (10/1000µs): 15A (8/20µs) Voltage - Reverse Standoff (Typ): 2.5V (Max) Supplier Device Package: X3-DFN0603-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 2.6V Voltage - Clamping (Max) @ Ipp: 6V (Typ) Power - Peak Pulse: 90W Power Line Protection: No Part Status: Active |
auf Bestellung 5945 Stücke: Lieferzeit 10-14 Tag (e) |
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GDZ15LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 15V 250MW 2DFNPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 380000 Stücke: Lieferzeit 10-14 Tag (e) |
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GDZ15LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 15V 250MW 2DFNPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 390777 Stücke: Lieferzeit 10-14 Tag (e) |
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GDZ6V2LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 6.2V 250MW 2DFNPackaging: Tape & Reel (TR) Tolerance: ±5.4% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 1 µA @ 3 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3430000 Stücke: Lieferzeit 10-14 Tag (e) |
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GDZ6V2LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 6.2V 250MW 2DFNPackaging: Cut Tape (CT) Tolerance: ±5.4% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 1 µA @ 3 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3439270 Stücke: Lieferzeit 10-14 Tag (e) |
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GDZ24LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 24V 250MW 2DFNPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 240000 Stücke: Lieferzeit 10-14 Tag (e) |
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GDZ24LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 24V 250MW 2DFNPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 259218 Stücke: Lieferzeit 10-14 Tag (e) |
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GDZ7V5LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 7.5V 250MW 2DFNPackaging: Tape & Reel (TR) Tolerance: ±5.23% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 500 nA @ 4 V |
auf Bestellung 700000 Stücke: Lieferzeit 10-14 Tag (e) |
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GDZ7V5LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 7.5V 250MW 2DFNPackaging: Cut Tape (CT) Tolerance: ±5.23% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 500 nA @ 4 V |
auf Bestellung 709185 Stücke: Lieferzeit 10-14 Tag (e) |
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GDZ11LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 11V 250MW 2DFNPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 8 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 270000 Stücke: Lieferzeit 10-14 Tag (e) |
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GDZ11LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 11V 250MW 2DFNPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 8 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 296213 Stücke: Lieferzeit 10-14 Tag (e) |
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GDZ2V7LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 2.7V 250MW 2DFNPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.7 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 20 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
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GDZ2V7LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 2.7V 250MW 2DFNPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.7 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 20 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 78055 Stücke: Lieferzeit 10-14 Tag (e) |
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GDZ4V3LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 4.3V 250MW 2DFNPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 5 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 200000 Stücke: Lieferzeit 10-14 Tag (e) |
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GDZ4V3LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 4.3V 250MW 2DFNPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 5 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 214140 Stücke: Lieferzeit 10-14 Tag (e) |
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GDZ6V8LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 6.8V 250MW 2DFNPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V |
auf Bestellung 1147038 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR8U60P5Q-13 | Diodes Incorporated |
Description: DIODE SBR 60V 8A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A Current - Reverse Leakage @ Vr: 330 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR8U60P5Q-13 | Diodes Incorporated |
Description: DIODE SBR 60V 8A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A Current - Reverse Leakage @ Vr: 330 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 15390 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR8U60P5Q-13D | Diodes Incorporated |
Description: DIODE SBR 60V 8A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A Current - Reverse Leakage @ Vr: 330 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FMMT493TC | Diodes Incorporated |
Description: TRANS NPN 100V 1A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
auf Bestellung 330000 Stücke: Lieferzeit 10-14 Tag (e) |
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FMMT493TC | Diodes Incorporated |
Description: TRANS NPN 100V 1A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
auf Bestellung 341681 Stücke: Lieferzeit 10-14 Tag (e) |
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FMMT491TC | Diodes Incorporated |
Description: TRANS NPN 60V 1A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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FMMT491TC | Diodes Incorporated |
Description: TRANS NPN 60V 1A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
auf Bestellung 87245 Stücke: Lieferzeit 10-14 Tag (e) |
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FMMT494QTC | Diodes Incorporated |
Description: TRANS NPN 120V 1A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 500 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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FMMT494QTC | Diodes Incorporated |
Description: TRANS NPN 120V 1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 500 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR8M100P5-13D | Diodes Incorporated |
Description: DIODE SBR 100V 8A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR8M100P5-13D | Diodes Incorporated |
Description: DIODE SBR 100V 8A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 19887 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR8M100P5-13 | Diodes Incorporated |
Description: DIODE SBR 100V 8A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 295000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR8M100P5Q-13 | Diodes Incorporated |
Description: DIODE SBR 100V 8A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR8M100P5Q-13 | Diodes Incorporated |
Description: DIODE SBR 100V 8A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5850 Stücke: Lieferzeit 10-14 Tag (e) |
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| SBR8M100P5Q-13-52 | Diodes Incorporated |
Description: SBR Diode PDI5 T&R 5KPackaging: Bulk Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 16 ns Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
Produkt ist nicht verfügbar |
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SBR8B60P5-13D | Diodes Incorporated |
Description: DIODE SBR 60V 5A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 5A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR8B60P5-7 | Diodes Incorporated |
Description: DIODE SBR 60V 5A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 5A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR8B60P5-7D | Diodes Incorporated |
Description: DIODE SBR 60V 5A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 5A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR8M100P5Q-13D | Diodes Incorporated |
Description: DIODE SBR 100V 8A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR8E20P5-7D | Diodes Incorporated |
Description: DIODE SBR 20V 8A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 8 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR8E20P5-13 | Diodes Incorporated |
Description: DIODE SBR 20V 8A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 8 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR8E20P5-13D | Diodes Incorporated |
Description: DIODE SBR 20V 8A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 8 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR8B60P5-13 | Diodes Incorporated |
Description: DIODE SBR 60V 5A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 5A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMT4011LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 40V 30A POWERDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 15.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4011LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 40V 30A POWERDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 15.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9776 Stücke: Lieferzeit 10-14 Tag (e) |
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74AHC08S14-13 | Diodes Incorporated |
Description: IC GATE AND 4CH 2-INP 14SOPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-SO Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 20 µA |
auf Bestellung 661 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7361C-SPR-13 | Diodes Incorporated |
Description: IC REG LINEAR POS ADJ 1A 8-SO-EPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 8-SO-EP Voltage - Output (Max): 5V Voltage - Output (Min/Fixed): 0.8V Control Features: Enable Part Status: Active PSRR: 75dB ~ 55dB (1kHz ~ 10kHz) Voltage Dropout (Max): 0.36V @ 1A (Typ) Protection Features: Over Current, Over Temperature |
auf Bestellung 125000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7361C-SPR-13 | Diodes Incorporated |
Description: IC REG LINEAR POS ADJ 1A 8-SO-EPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 8-SO-EP Voltage - Output (Max): 5V Voltage - Output (Min/Fixed): 0.8V Control Features: Enable Part Status: Active PSRR: 75dB ~ 55dB (1kHz ~ 10kHz) Voltage Dropout (Max): 0.36V @ 1A (Typ) Protection Features: Over Current, Over Temperature |
auf Bestellung 127157 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2170U-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 3.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4642470 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.63 EUR |
| 40+ | 0.45 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.16 EUR |
| DMN10H700S-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN10H700S-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
auf Bestellung 9976 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.76 EUR |
| 32+ | 0.56 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.16 EUR |
| 2000+ | 0.14 EUR |
| 5000+ | 0.13 EUR |
| DMN3042L-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
auf Bestellung 2030000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.14 EUR |
| 20000+ | 0.13 EUR |
| 30000+ | 0.12 EUR |
| 50000+ | 0.11 EUR |
| DMN3042L-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
auf Bestellung 2046277 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 39+ | 0.45 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.17 EUR |
| 5000+ | 0.15 EUR |
| WX5012D0125.000000 |
Hersteller: Diodes Incorporated
Description: XO OSCILLATOR SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: XO OSCILLATOR SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PI7C9X3G816GPBHFCE |
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Hersteller: Diodes Incorporated
Description: PACKET SWITCH H-FCBGA190190-324
Packaging: Tray
Package / Case: 324-BFBGA, FCBGA
Mounting Type: Surface Mount
Interface: I2C, JTAG, PCI Express, Serial, SMBus
Voltage - Supply: 0.9V ~ 0.99V
Applications: Packet Switch, 8-Port/16-Lane
Supplier Device Package: 324-HFCBGA (19x19)
Part Status: Active
Description: PACKET SWITCH H-FCBGA190190-324
Packaging: Tray
Package / Case: 324-BFBGA, FCBGA
Mounting Type: Surface Mount
Interface: I2C, JTAG, PCI Express, Serial, SMBus
Voltage - Supply: 0.9V ~ 0.99V
Applications: Packet Switch, 8-Port/16-Lane
Supplier Device Package: 324-HFCBGA (19x19)
Part Status: Active
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 86.1 EUR |
| 10+ | 65.16 EUR |
| 25+ | 64.27 EUR |
| DML3012LDC-7A |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-1
Packaging: Tape & Reel (TR)
Features: Power Good, Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 4.8mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-12 (Type B)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET BVDSS: 8V~24V V-DFN3030-1
Packaging: Tape & Reel (TR)
Features: Power Good, Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 4.8mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-12 (Type B)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DML3012LDC-7A |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-1
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 4.8mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-12 (Type B)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET BVDSS: 8V~24V V-DFN3030-1
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 4.8mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-12 (Type B)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.63 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.08 EUR |
| DML1008LDS-7 |
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Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Voltage - Load: 3.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Voltage - Load: 3.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DML1008LDS-7 |
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Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Voltage - Load: 3.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Voltage - Load: 3.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Part Status: Active
auf Bestellung 2830 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 0.99 EUR |
| 21+ | 0.84 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.37 EUR |
| DMP3007SCG-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
Description: MOSFET P-CH 30V 50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.48 EUR |
| 4000+ | 0.44 EUR |
| 6000+ | 0.42 EUR |
| 10000+ | 0.4 EUR |
| DMP3007SCG-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
Description: MOSFET P-CH 30V 50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
auf Bestellung 18453 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.85 EUR |
| 16+ | 1.16 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.54 EUR |
| ZXMP6A17GQTA-52 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMP6A17GTA-52 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN6068SEQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 638497 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 21+ | 0.87 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.43 EUR |
| 2000+ | 0.38 EUR |
| D2V5L1BS2LP3-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 2.5VWM 6V X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 2.6V
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 90W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 2.5VWM 6V X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 2.6V
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 90W
Power Line Protection: No
Part Status: Active
auf Bestellung 5945 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 0.35 EUR |
| 75+ | 0.24 EUR |
| 162+ | 0.11 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.099 EUR |
| 2000+ | 0.098 EUR |
| 5000+ | 0.097 EUR |
| GDZ15LP3-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 15V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 15V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 380000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.056 EUR |
| 20000+ | 0.049 EUR |
| 50000+ | 0.047 EUR |
| 70000+ | 0.043 EUR |
| GDZ15LP3-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 15V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 15V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 390777 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 0.25 EUR |
| 102+ | 0.17 EUR |
| 238+ | 0.074 EUR |
| 500+ | 0.07 EUR |
| 1000+ | 0.066 EUR |
| 2000+ | 0.064 EUR |
| 5000+ | 0.062 EUR |
| GDZ6V2LP3-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.2V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5.4%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 6.2V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5.4%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3430000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.066 EUR |
| 20000+ | 0.061 EUR |
| 30000+ | 0.06 EUR |
| 50000+ | 0.059 EUR |
| 70000+ | 0.053 EUR |
| GDZ6V2LP3-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.2V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5.4%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 6.2V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5.4%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3439270 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 0.3 EUR |
| 87+ | 0.2 EUR |
| 201+ | 0.088 EUR |
| 500+ | 0.083 EUR |
| 1000+ | 0.078 EUR |
| 2000+ | 0.076 EUR |
| 5000+ | 0.074 EUR |
| GDZ24LP3-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 24V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 240000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.049 EUR |
| 30000+ | 0.047 EUR |
| 50000+ | 0.043 EUR |
| GDZ24LP3-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 24V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 259218 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 0.25 EUR |
| 102+ | 0.17 EUR |
| 238+ | 0.074 EUR |
| 500+ | 0.07 EUR |
| 1000+ | 0.066 EUR |
| 2000+ | 0.064 EUR |
| 5000+ | 0.062 EUR |
| GDZ7V5LP3-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5.23%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Description: DIODE ZENER 7.5V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5.23%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
auf Bestellung 700000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.052 EUR |
| GDZ7V5LP3-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5.23%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Description: DIODE ZENER 7.5V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5.23%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
auf Bestellung 709185 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 0.3 EUR |
| 87+ | 0.2 EUR |
| 206+ | 0.086 EUR |
| 500+ | 0.079 EUR |
| 1000+ | 0.072 EUR |
| 2000+ | 0.065 EUR |
| 5000+ | 0.057 EUR |
| GDZ11LP3-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 11V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 11V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 270000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.049 EUR |
| 30000+ | 0.047 EUR |
| 50000+ | 0.043 EUR |
| GDZ11LP3-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 11V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 11V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 296213 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 0.25 EUR |
| 102+ | 0.17 EUR |
| 256+ | 0.069 EUR |
| 500+ | 0.064 EUR |
| 1000+ | 0.059 EUR |
| 2000+ | 0.058 EUR |
| 5000+ | 0.057 EUR |
| GDZ2V7LP3-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.7V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 2.7V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.052 EUR |
| 20000+ | 0.049 EUR |
| 50000+ | 0.047 EUR |
| 70000+ | 0.043 EUR |
| GDZ2V7LP3-7 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.7V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 2.7V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 78055 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.19 EUR |
| 129+ | 0.14 EUR |
| 249+ | 0.071 EUR |
| 500+ | 0.065 EUR |
| 1000+ | 0.059 EUR |
| 2000+ | 0.057 EUR |
| 5000+ | 0.056 EUR |
| GDZ4V3LP3-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.3V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 4.3V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.056 EUR |
| 20000+ | 0.049 EUR |
| 50000+ | 0.047 EUR |
| 70000+ | 0.043 EUR |
| GDZ4V3LP3-7 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.3V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 4.3V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 214140 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 0.25 EUR |
| 102+ | 0.17 EUR |
| 238+ | 0.074 EUR |
| 500+ | 0.07 EUR |
| 1000+ | 0.066 EUR |
| 2000+ | 0.064 EUR |
| 5000+ | 0.062 EUR |
| GDZ6V8LP3-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.8V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Description: DIODE ZENER 6.8V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
auf Bestellung 1147038 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.23 EUR |
| 107+ | 0.17 EUR |
| 228+ | 0.077 EUR |
| 500+ | 0.073 EUR |
| 1000+ | 0.069 EUR |
| 2000+ | 0.067 EUR |
| 5000+ | 0.066 EUR |
| SBR8U60P5Q-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.55 EUR |
| 10000+ | 0.54 EUR |
| SBR8U60P5Q-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15390 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.58 EUR |
| 16+ | 1.17 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.72 EUR |
| 1000+ | 0.61 EUR |
| 2000+ | 0.6 EUR |
| SBR8U60P5Q-13D |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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| FMMT493TC |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS NPN 100V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 330000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.17 EUR |
| 20000+ | 0.16 EUR |
| 30000+ | 0.15 EUR |
| 50000+ | 0.14 EUR |
| FMMT493TC |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS NPN 100V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 341681 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.88 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| 2000+ | 0.21 EUR |
| 5000+ | 0.18 EUR |
| FMMT491TC |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.19 EUR |
| 20000+ | 0.17 EUR |
| 50000+ | 0.16 EUR |
| FMMT491TC |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
auf Bestellung 87245 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 0.99 EUR |
| 30+ | 0.6 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.26 EUR |
| 2000+ | 0.23 EUR |
| 5000+ | 0.21 EUR |
| FMMT494QTC |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS NPN 120V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 120V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.21 EUR |
| FMMT494QTC |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS NPN 120V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 120V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 30+ | 0.6 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.26 EUR |
| 2000+ | 0.24 EUR |
| 5000+ | 0.22 EUR |
| SBR8M100P5-13D |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SBR 100V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.28 EUR |
| 10000+ | 0.27 EUR |
| SBR8M100P5-13D |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SBR 100V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 19887 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.97 EUR |
| 25+ | 0.72 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.34 EUR |
| SBR8M100P5-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SBR 100V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 295000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.31 EUR |
| SBR8M100P5Q-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SBR 100V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.36 EUR |
| SBR8M100P5Q-13 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SBR 100V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5850 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 0.99 EUR |
| 22+ | 0.81 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.4 EUR |
| SBR8M100P5Q-13-52 |
![]() |
Hersteller: Diodes Incorporated
Description: SBR Diode PDI5 T&R 5K
Packaging: Bulk
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: SBR Diode PDI5 T&R 5K
Packaging: Bulk
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBR8B60P5-13D |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 5A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: DIODE SBR 60V 5A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBR8B60P5-7 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 5A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: DIODE SBR 60V 5A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBR8B60P5-7D |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 5A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: DIODE SBR 60V 5A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBR8M100P5Q-13D |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SBR 100V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.34 EUR |
| 10000+ | 0.31 EUR |
| SBR8E20P5-7D |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE SBR 20V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE SBR 20V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBR8E20P5-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 20V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE SBR 20V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBR8E20P5-13D |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 20V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE SBR 20V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBR8B60P5-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 5A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: DIODE SBR 60V 5A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT4011LFG-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.27 EUR |
| 4000+ | 0.26 EUR |
| 6000+ | 0.25 EUR |
| DMT4011LFG-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9776 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.23 EUR |
| 23+ | 0.77 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.34 EUR |
| 74AHC08S14-13 |
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Hersteller: Diodes Incorporated
Description: IC GATE AND 4CH 2-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
Description: IC GATE AND 4CH 2-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
auf Bestellung 661 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.93 EUR |
| 33+ | 0.55 EUR |
| 40+ | 0.45 EUR |
| 100+ | 0.34 EUR |
| 250+ | 0.28 EUR |
| 500+ | 0.25 EUR |
| AP7361C-SPR-13 |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR POS ADJ 1A 8-SO-EP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 8-SO-EP
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
Part Status: Active
PSRR: 75dB ~ 55dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.36V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR POS ADJ 1A 8-SO-EP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 8-SO-EP
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
Part Status: Active
PSRR: 75dB ~ 55dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.36V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
auf Bestellung 125000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.4 EUR |
| 5000+ | 0.37 EUR |
| 7500+ | 0.35 EUR |
| 12500+ | 0.33 EUR |
| 17500+ | 0.32 EUR |
| AP7361C-SPR-13 |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR POS ADJ 1A 8-SO-EP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 8-SO-EP
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
Part Status: Active
PSRR: 75dB ~ 55dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.36V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR POS ADJ 1A 8-SO-EP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 8-SO-EP
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
Part Status: Active
PSRR: 75dB ~ 55dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.36V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
auf Bestellung 127157 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.74 EUR |
| 17+ | 1.06 EUR |
| 25+ | 0.88 EUR |
| 100+ | 0.67 EUR |
| 250+ | 0.57 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |








