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ZMC05TA ZMC05TA Diodes Incorporated ZMC05.pdf Description: SENSOR CURRENT MR 5A AC/DC
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Supplier Device Package: SM8
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DMJ65H430SCTI Diodes Incorporated Description: MOSFET BVDSS: 501V~650V ITO-220A
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ITO220AB-N (Type HE)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 100 V
Produkt ist nicht verfügbar
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GBU1010 GBU1010 Diodes Incorporated ds30052.pdf Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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PXC500005 PXC500005 Diodes Incorporated PX_2-5V.pdf Description: XTAL OSC XO 125.0000MHZ LVDS
Base Resonator: Crystal
Frequency: 125 MHz
Voltage - Supply: 2.5V
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Output: LVDS
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Packaging: Tape & Reel (TR)
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PXC500006 PXC500006 Diodes Incorporated PXC500006.pdf Description: XTAL OSC XO 125.0000MHZ LVDS
Base Resonator: Crystal
Frequency: 125 MHz
Voltage - Supply: 3.3V
Operating Temperature: -20°C ~ 70°C
Type: XO (Standard)
Output: LVDS
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Packaging: Tape & Reel (TR)
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PXC500007 PXC500007 Diodes Incorporated PXC500007_Ver.B.pdf Description: XTAL OSC XO 125.0000MHZ LVDS SMD
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -20°C ~ 70°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVDS
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 6-SMD, No Lead
Packaging: Tape & Reel (TR)
Base Resonator: Crystal
Frequency: 125 MHz
Height - Seated (Max): 0.061" (1.55mm)
Current - Supply (Max): 75mA
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PXC500007 PXC500007 Diodes Incorporated PXC500007_Ver.B.pdf Description: XTAL OSC XO 125.0000MHZ LVDS SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 75mA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 125 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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SXC500001 Diodes Incorporated Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
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SXC500003 Diodes Incorporated Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
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SXC500009 Diodes Incorporated Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
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DMTH6016LFVWQ-13 DMTH6016LFVWQ-13 Diodes Incorporated DMTH6016LFVWQ.pdf Description: MOSFET N-CH 60V 41A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.17W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Qualification: AEC-Q101
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DMTH6016LFVWQ-13 DMTH6016LFVWQ-13 Diodes Incorporated DMTH6016LFVWQ.pdf Description: MOSFET N-CH 60V 41A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.17W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Qualification: AEC-Q101
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DMTH6016LFVW-13 DMTH6016LFVW-13 Diodes Incorporated DMTH6016LFVW.pdf Description: MOSFET N-CH 60V 41A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Qualification: AEC-Q101
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DMTH6016LFVW-7 DMTH6016LFVW-7 Diodes Incorporated DMTH6016LFVW.pdf Description: MOSFET N-CH 60V 41A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Qualification: AEC-Q101
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DMTH6016LFVWQ-13-A DMTH6016LFVWQ-13-A Diodes Incorporated DMTH6016LFVWQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.17W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Qualification: AEC-Q101
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DMTH6016LFVWQ-7-A DMTH6016LFVWQ-7-A Diodes Incorporated DMTH6016LFVWQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.17W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Qualification: AEC-Q101
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BZT52C36SQ-7-F BZT52C36SQ-7-F Diodes Incorporated ds30093.pdf Description: DIODE ZENER 36V 200MW SOD323
Tolerance: ±5.56%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
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75000+0.056 EUR
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BZT52C36SQ-7-F BZT52C36SQ-7-F Diodes Incorporated ds30093.pdf Description: DIODE ZENER 36V 200MW SOD323
Tolerance: ±5.56%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
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BZT52C36S-7 BZT52C36S-7 Diodes Incorporated BZT52C2V0S-BZT52C39S.pdf Description: DIODE ZENER 36V 200MW SOD323
Packaging: Cut Tape (CT)
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BZT52C36TQ-7-F BZT52C36TQ-7-F Diodes Incorporated ds30502.pdf Description: DIODE ZENER 36V 300MW SOD523
Tolerance: ±5.56%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
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BZT52C36TQ-7-F BZT52C36TQ-7-F Diodes Incorporated ds30502.pdf Description: DIODE ZENER 36V 300MW SOD523
Tolerance: ±5.56%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
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BZT52C36Q-7-F BZT52C36Q-7-F Diodes Incorporated ds18004.pdf Description: DIODE ZENER 36V 370MW SOD123
Tolerance: ±5.56%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
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DDTC123ECAQ-7-F DDTC123ECAQ-7-F Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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AL8863EV1 AL8863EV1 Diodes Incorporated AL8863EV1-User-Guide.pdf Description: LED MV Int Switch
Features: Dimmable
Packaging: Tape & Reel (TR)
Voltage - Input: 5V ~ 60V
Contents: Board(s)
Current - Output / Channel: 3A
Utilized IC / Part: AL8863
Outputs and Type: 16 Non-Isolated Outputs
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AL8863EV1 AL8863EV1 Diodes Incorporated AL8863EV1-User-Guide.pdf Description: LED MV Int Switch
Features: Dimmable
Packaging: Cut Tape (CT)
Voltage - Input: 5V ~ 60V
Contents: Board(s)
Current - Output / Channel: 3A
Utilized IC / Part: AL8863
Outputs and Type: 16 Non-Isolated Outputs
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AL8866QEV1 AL8866QEV1 Diodes Incorporated AL8866Q-EV1-User-Guide.pdf Description: EVAL BOARD FOR AL8866Q
Features: Dimmable
Packaging: Bulk
Voltage - Input: 9V ~ 16V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: AL8866Q
Outputs and Type: 1 Non-Isolated Output
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AL8841QEV1-EMC AL8841QEV1-EMC Diodes Incorporated AL8841QEV1-EMC-User-Guide.pdf Description: LED MV Int Switch
Features: Dimmable
Packaging: Bulk
Voltage - Input: 5V ~ 40V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: AL8841Q
Outputs and Type: 10 Non-Isolated Outputs
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AL88902QEV1 AL88902QEV1 Diodes Incorporated AL88902Q-EV1-User-Guide.pdf Description: LED MV Int Switch
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.8V ~ 60V
Current - Output: 2.5A
Contents: Board(s)
Frequency - Switching: 2.5MHz
Regulator Topology: Buck
Utilized IC / Part: AL88902Q
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
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AL88902QEV2 AL88902QEV2 Diodes Incorporated AL88902Q-EV2-User-Guide.pdf Description: LED MV Int Switch
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.8V ~ 60V
Current - Output: 2.5A
Contents: Board(s)
Frequency - Switching: 2.5MHz
Regulator Topology: Buck
Utilized IC / Part: AL88902Q
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
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AL8890QEV2 AL8890QEV2 Diodes Incorporated AL8890Q-EV2-User-Guide.pdf Description: LED MV Int Switch
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.8V ~ 60V
Current - Output: 3.5A
Contents: Board(s)
Frequency - Switching: 2.5MHz
Regulator Topology: Buck
Utilized IC / Part: AL8890Q
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
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AL8890QEV1 AL8890QEV1 Diodes Incorporated AL8890Q-EV1-User-Guide.pdf Description: LED MV Int Switch
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.8V ~ 60V
Current - Output: 3.5A
Contents: Board(s)
Frequency - Switching: 2.5MHz
Regulator Topology: Buck
Utilized IC / Part: AL8890Q
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
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AL8891QEV1 AL8891QEV1 Diodes Incorporated AL8891Q-EV1-User-Guide.pdf Description: LED MV Int Switch
Features: Dimmable
Packaging: Bulk
Voltage - Input: 4.5V ~ 65V
Contents: Board(s)
Current - Output / Channel: 2A
Utilized IC / Part: AL8891Q
Outputs and Type: 16 Non-Isolated Outputs
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AL8866QEV2 AL8866QEV2 Diodes Incorporated AL8866Q-EV2-User-Guide.pdf Description: EVAL BOARD FOR AL8866Q
Features: Dimmable
Packaging: Bulk
Voltage - Input: 9V ~ 16V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: AL8866Q
Outputs and Type: 1 Non-Isolated Output
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DMP2010UFV-13 DMP2010UFV-13 Diodes Incorporated DMP2010UFV.pdf Description: MOSFET P-CH 20V 50A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V
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DMP2010UFV-13 DMP2010UFV-13 Diodes Incorporated DMP2010UFV.pdf Description: MOSFET P-CH 20V 50A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V
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DMT69M8LFV-13 DMT69M8LFV-13 Diodes Incorporated DMT69M8LFV.pdf Description: MOSFET N-CH 60V 45A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
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DMT69M8LFV-13 DMT69M8LFV-13 Diodes Incorporated DMT69M8LFV.pdf Description: MOSFET N-CH 60V 45A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
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DMP2006UFGQ-13 DMP2006UFGQ-13 Diodes Incorporated DMP2006UFGQ.pdf Description: MOSFET P-CH 20V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 10 V
Qualification: AEC-Q101
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DMP2006UFGQ-13 DMP2006UFGQ-13 Diodes Incorporated DMP2006UFGQ.pdf Description: MOSFET P-CH 20V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 10 V
Qualification: AEC-Q101
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DMP22M1UPSW-13 DMP22M1UPSW-13 Diodes Incorporated Description: MOSFET BVDSS: 8V~24V POWERDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 104W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
Produkt ist nicht verfügbar
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BAS70TWQ-7-F BAS70TWQ-7-F Diodes Incorporated ds30158.pdf Description: DIODE ARR SCHOTT 70V 70MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS70TWQ-7-F BAS70TWQ-7-F Diodes Incorporated ds30158.pdf Description: DIODE ARR SCHOTT 70V 70MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
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APX803S-40SA-7 APX803S-40SA-7 Diodes Incorporated APX803S.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
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APX803S-40SA-7 APX803S-40SA-7 Diodes Incorporated APX803S.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
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APX803L-40SA-7 APX803L-40SA-7 Diodes Incorporated APX803L.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
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APX803L-40SA-7 APX803L-40SA-7 Diodes Incorporated APX803L.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
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GBP208 GBP208 Diodes Incorporated GBP206-GBP210.pdf Description: BRIDGE RECT 1PHASE 800V 2A GBP
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBP
Packaging: Tube
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DMP1010UCA4-7 Diodes Incorporated DMP1010UCA4.pdf Description: MOSFET BVDSS: 8V~24V X2-DSN1212-
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: X2-DSN1212-4
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 699 pF @ 4 V
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PI3CH400ZBEX-13R PI3CH400ZBEX-13R Diodes Incorporated PI3CH400.pdf Description: BUS SWITCH 3V V-QFN3535-14 T&R 5
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 14-TQFN (3.5x3.5)
Produkt ist nicht verfügbar
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DMTH6005LPSQ-13 DMTH6005LPSQ-13 Diodes Incorporated DMTH6005LPSQ.pdf Description: MOSFET N-CH 60V 100A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
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DMTH6005LPSQ-13 DMTH6005LPSQ-13 Diodes Incorporated DMTH6005LPSQ.pdf Description: MOSFET N-CH 60V 100A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
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DMTH6005LFGQ-13 DMTH6005LFGQ-13 Diodes Incorporated DMTH6005LFGQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 30 V
Qualification: AEC-Q101
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DMTH6005LFG-13 DMTH6005LFG-13 Diodes Incorporated DMTH6005LFG.pdf Description: MOSFET N-CH 60V 19.7A/100A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 30 V
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DMTH6005LFGQ-7 DMTH6005LFGQ-7 Diodes Incorporated DMTH6005LFGQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH6005LFG-7 DMTH6005LFG-7 Diodes Incorporated DMTH6005LFG.pdf Description: MOSFET N-CH 60V 19.7A/100A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 30 V
Produkt ist nicht verfügbar
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DMTH6005LCT DMTH6005LCT Diodes Incorporated DMTH6005LCT.pdf Description: MOSFET N-CH 60V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
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DMTH6005LPSWQ-13 DMTH6005LPSWQ-13 Diodes Incorporated DMTH6005LPSWQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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D33V0S1UG3LP20-7 D33V0S1UG3LP20-7 Diodes Incorporated D33V0S1UG3LP20.pdf Description: TVS DIODE 33VWM 40V UDFN20203
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 474pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 33V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 6660W (6.66kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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AL5887EV1 AL5887EV1 Diodes Incorporated Description: EVAL BOARD FOR AL5887
Features: Dimmable
Packaging: Bulk
Voltage - Input: 2.7V ~ 5.5V
Contents: Board(s)
Current - Output / Channel: 70mA
Utilized IC / Part: AL5887
Outputs and Type: 36 Non-Isolated Outputs
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1+401.13 EUR
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PD3S130HQ-7 PD3S130HQ-7 Diodes Incorporated PD3S130HQ.pdf Description: DIODE SCHOTTK 30V 1A POWERDI 323
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 700 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Qualification: AEC-Q101
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3000+0.35 EUR
6000+0.29 EUR
15000+0.27 EUR
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ZMC05TA ZMC05.pdf
ZMC05TA
Hersteller: Diodes Incorporated
Description: SENSOR CURRENT MR 5A AC/DC
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Supplier Device Package: SM8
Produkt ist nicht verfügbar
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DMJ65H430SCTI
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 501V~650V ITO-220A
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ITO220AB-N (Type HE)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 100 V
Produkt ist nicht verfügbar
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GBU1010 ds30052.pdf
GBU1010
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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5+4.93 EUR
20+2.82 EUR
100+2.18 EUR
500+1.75 EUR
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5000+1.37 EUR
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PXC500005 PX_2-5V.pdf
PXC500005
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 125.0000MHZ LVDS
Base Resonator: Crystal
Frequency: 125 MHz
Voltage - Supply: 2.5V
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Output: LVDS
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PXC500006 PXC500006.pdf
PXC500006
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 125.0000MHZ LVDS
Base Resonator: Crystal
Frequency: 125 MHz
Voltage - Supply: 3.3V
Operating Temperature: -20°C ~ 70°C
Type: XO (Standard)
Output: LVDS
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Packaging: Tape & Reel (TR)
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PXC500007 PXC500007_Ver.B.pdf
PXC500007
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 125.0000MHZ LVDS SMD
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -20°C ~ 70°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVDS
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 6-SMD, No Lead
Packaging: Tape & Reel (TR)
Base Resonator: Crystal
Frequency: 125 MHz
Height - Seated (Max): 0.061" (1.55mm)
Current - Supply (Max): 75mA
Produkt ist nicht verfügbar
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PXC500007 PXC500007_Ver.B.pdf
PXC500007
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 125.0000MHZ LVDS SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 75mA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 125 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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SXC500001
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
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SXC500003
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
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SXC500009
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
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DMTH6016LFVWQ-13 DMTH6016LFVWQ.pdf
DMTH6016LFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 41A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.17W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH6016LFVWQ-13 DMTH6016LFVWQ.pdf
DMTH6016LFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 41A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.17W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 1121 Stücke:
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11+2.01 EUR
17+1.26 EUR
100+0.82 EUR
500+0.64 EUR
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DMTH6016LFVW-13 DMTH6016LFVW.pdf
DMTH6016LFVW-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 41A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
3000+0.5 EUR
6000+0.45 EUR
9000+0.44 EUR
15000+0.42 EUR
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DMTH6016LFVW-7 DMTH6016LFVW.pdf
DMTH6016LFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 41A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Qualification: AEC-Q101
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2000+0.52 EUR
4000+0.48 EUR
6000+0.45 EUR
10000+0.43 EUR
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DMTH6016LFVWQ-13-A DMTH6016LFVWQ.pdf
DMTH6016LFVWQ-13-A
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.17W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH6016LFVWQ-7-A DMTH6016LFVWQ.pdf
DMTH6016LFVWQ-7-A
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.17W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Qualification: AEC-Q101
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2000+0.65 EUR
4000+0.61 EUR
6000+0.58 EUR
10000+0.56 EUR
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BZT52C36SQ-7-F ds30093.pdf
BZT52C36SQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 36V 200MW SOD323
Tolerance: ±5.56%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
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3000+0.098 EUR
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BZT52C36SQ-7-F ds30093.pdf
BZT52C36SQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 36V 200MW SOD323
Tolerance: ±5.56%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
auf Bestellung 95896 Stücke:
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120+0.18 EUR
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BZT52C36S-7 BZT52C2V0S-BZT52C39S.pdf
BZT52C36S-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 36V 200MW SOD323
Packaging: Cut Tape (CT)
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35+0.61 EUR
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BZT52C36TQ-7-F ds30502.pdf
BZT52C36TQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 36V 300MW SOD523
Tolerance: ±5.56%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
auf Bestellung 96000 Stücke:
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AnzahlPrivatkunde
3000+0.087 EUR
6000+0.065 EUR
9000+0.055 EUR
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30000+0.046 EUR
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BZT52C36TQ-7-F ds30502.pdf
BZT52C36TQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 36V 300MW SOD523
Tolerance: ±5.56%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
auf Bestellung 96190 Stücke:
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AnzahlPrivatkunde
77+0.27 EUR
112+0.19 EUR
219+0.096 EUR
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BZT52C36Q-7-F ds18004.pdf
BZT52C36Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 36V 370MW SOD123
Tolerance: ±5.56%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
auf Bestellung 49418 Stücke:
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112+0.19 EUR
286+0.074 EUR
307+0.068 EUR
500+0.056 EUR
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DDTC123ECAQ-7-F ds30329.pdf
DDTC123ECAQ-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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3000+0.079 EUR
6000+0.07 EUR
9000+0.065 EUR
15000+0.061 EUR
21000+0.058 EUR
30000+0.055 EUR
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AL8863EV1 AL8863EV1-User-Guide.pdf
AL8863EV1
Hersteller: Diodes Incorporated
Description: LED MV Int Switch
Features: Dimmable
Packaging: Tape & Reel (TR)
Voltage - Input: 5V ~ 60V
Contents: Board(s)
Current - Output / Channel: 3A
Utilized IC / Part: AL8863
Outputs and Type: 16 Non-Isolated Outputs
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5+92.61 EUR
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AL8863EV1 AL8863EV1-User-Guide.pdf
AL8863EV1
Hersteller: Diodes Incorporated
Description: LED MV Int Switch
Features: Dimmable
Packaging: Cut Tape (CT)
Voltage - Input: 5V ~ 60V
Contents: Board(s)
Current - Output / Channel: 3A
Utilized IC / Part: AL8863
Outputs and Type: 16 Non-Isolated Outputs
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AL8866QEV1 AL8866Q-EV1-User-Guide.pdf
AL8866QEV1
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8866Q
Features: Dimmable
Packaging: Bulk
Voltage - Input: 9V ~ 16V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: AL8866Q
Outputs and Type: 1 Non-Isolated Output
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AL8841QEV1-EMC AL8841QEV1-EMC-User-Guide.pdf
AL8841QEV1-EMC
Hersteller: Diodes Incorporated
Description: LED MV Int Switch
Features: Dimmable
Packaging: Bulk
Voltage - Input: 5V ~ 40V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: AL8841Q
Outputs and Type: 10 Non-Isolated Outputs
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AL88902QEV1 AL88902Q-EV1-User-Guide.pdf
AL88902QEV1
Hersteller: Diodes Incorporated
Description: LED MV Int Switch
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.8V ~ 60V
Current - Output: 2.5A
Contents: Board(s)
Frequency - Switching: 2.5MHz
Regulator Topology: Buck
Utilized IC / Part: AL88902Q
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
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1+137.65 EUR
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AL88902QEV2 AL88902Q-EV2-User-Guide.pdf
AL88902QEV2
Hersteller: Diodes Incorporated
Description: LED MV Int Switch
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.8V ~ 60V
Current - Output: 2.5A
Contents: Board(s)
Frequency - Switching: 2.5MHz
Regulator Topology: Buck
Utilized IC / Part: AL88902Q
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
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1+137.65 EUR
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AL8890QEV2 AL8890Q-EV2-User-Guide.pdf
AL8890QEV2
Hersteller: Diodes Incorporated
Description: LED MV Int Switch
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.8V ~ 60V
Current - Output: 3.5A
Contents: Board(s)
Frequency - Switching: 2.5MHz
Regulator Topology: Buck
Utilized IC / Part: AL8890Q
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
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1+137.65 EUR
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AL8890QEV1 AL8890Q-EV1-User-Guide.pdf
AL8890QEV1
Hersteller: Diodes Incorporated
Description: LED MV Int Switch
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.8V ~ 60V
Current - Output: 3.5A
Contents: Board(s)
Frequency - Switching: 2.5MHz
Regulator Topology: Buck
Utilized IC / Part: AL8890Q
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
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1+137.65 EUR
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AL8891QEV1 AL8891Q-EV1-User-Guide.pdf
AL8891QEV1
Hersteller: Diodes Incorporated
Description: LED MV Int Switch
Features: Dimmable
Packaging: Bulk
Voltage - Input: 4.5V ~ 65V
Contents: Board(s)
Current - Output / Channel: 2A
Utilized IC / Part: AL8891Q
Outputs and Type: 16 Non-Isolated Outputs
Produkt ist nicht verfügbar
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AL8866QEV2 AL8866Q-EV2-User-Guide.pdf
AL8866QEV2
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8866Q
Features: Dimmable
Packaging: Bulk
Voltage - Input: 9V ~ 16V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: AL8866Q
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 11 Stücke:
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1+171 EUR
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DMP2010UFV-13 DMP2010UFV.pdf
DMP2010UFV-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 50A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V
Produkt ist nicht verfügbar
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DMP2010UFV-13 DMP2010UFV.pdf
DMP2010UFV-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 50A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V
auf Bestellung 2173 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.65 EUR
21+1.02 EUR
100+0.67 EUR
500+0.51 EUR
1000+0.46 EUR
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DMT69M8LFV-13 DMT69M8LFV.pdf
DMT69M8LFV-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 45A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT69M8LFV-13 DMT69M8LFV.pdf
DMT69M8LFV-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 45A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 1872 Stücke:
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AnzahlPrivatkunde
10+2.14 EUR
16+1.34 EUR
100+0.88 EUR
500+0.68 EUR
1000+0.62 EUR
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DMP2006UFGQ-13 DMP2006UFGQ.pdf
DMP2006UFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1755000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.71 EUR
6000+0.67 EUR
9000+0.65 EUR
Mindestbestellmenge: 3000 Stücke
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DMP2006UFGQ-13 DMP2006UFGQ.pdf
DMP2006UFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1757879 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.75 EUR
13+1.73 EUR
100+1.15 EUR
500+0.9 EUR
1000+0.82 EUR
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DMP22M1UPSW-13
DMP22M1UPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V POWERDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 104W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
Produkt ist nicht verfügbar
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BAS70TWQ-7-F ds30158.pdf
BAS70TWQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 70V 70MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS70TWQ-7-F ds30158.pdf
BAS70TWQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 70V 70MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
auf Bestellung 2635 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
81+0.26 EUR
112+0.19 EUR
500+0.15 EUR
1000+0.14 EUR
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APX803S-40SA-7 APX803S.pdf
APX803S-40SA-7
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.18 EUR
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APX803S-40SA-7 APX803S.pdf
APX803S-40SA-7
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
auf Bestellung 3800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
71+0.3 EUR
80+0.26 EUR
100+0.23 EUR
250+0.2 EUR
500+0.19 EUR
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APX803L-40SA-7 APX803L.pdf
APX803L-40SA-7
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
6000+0.21 EUR
9000+0.2 EUR
15000+0.19 EUR
21000+0.18 EUR
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APX803L-40SA-7 APX803L.pdf
APX803L-40SA-7
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
auf Bestellung 42193 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.18 EUR
31+0.7 EUR
37+0.57 EUR
100+0.43 EUR
250+0.36 EUR
500+0.32 EUR
1000+0.29 EUR
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GBP208 GBP206-GBP210.pdf
GBP208
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 2A GBP
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBP
Packaging: Tube
auf Bestellung 28010 Stücke:
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AnzahlPrivatkunde
12+1.8 EUR
35+0.88 EUR
105+0.71 EUR
525+0.55 EUR
1015+0.5 EUR
2030+0.45 EUR
5005+0.4 EUR
10010+0.38 EUR
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DMP1010UCA4-7 DMP1010UCA4.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DSN1212-
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: X2-DSN1212-4
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 699 pF @ 4 V
auf Bestellung 882000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.32 EUR
6000+0.3 EUR
9000+0.27 EUR
15000+0.26 EUR
21000+0.25 EUR
30000+0.24 EUR
Mindestbestellmenge: 3000 Stücke
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PI3CH400ZBEX-13R PI3CH400.pdf
PI3CH400ZBEX-13R
Hersteller: Diodes Incorporated
Description: BUS SWITCH 3V V-QFN3535-14 T&R 5
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 14-TQFN (3.5x3.5)
Produkt ist nicht verfügbar
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DMTH6005LPSQ-13 DMTH6005LPSQ.pdf
DMTH6005LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 342500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.21 EUR
5000+1.19 EUR
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DMTH6005LPSQ-13 DMTH6005LPSQ.pdf
DMTH6005LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 344968 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.17 EUR
10+2.4 EUR
100+1.69 EUR
500+1.43 EUR
1000+1.32 EUR
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DMTH6005LFGQ-13 DMTH6005LFGQ.pdf
DMTH6005LFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.94 EUR
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DMTH6005LFG-13 DMTH6005LFG.pdf
DMTH6005LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 19.7A/100A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.95 EUR
6000+0.9 EUR
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DMTH6005LFGQ-7 DMTH6005LFGQ.pdf
DMTH6005LFGQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH6005LFG-7 DMTH6005LFG.pdf
DMTH6005LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 19.7A/100A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 30 V
Produkt ist nicht verfügbar
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DMTH6005LCT DMTH6005LCT.pdf
DMTH6005LCT
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 33950 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+1.7 EUR
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DMTH6005LPSWQ-13 DMTH6005LPSWQ.pdf
DMTH6005LPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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D33V0S1UG3LP20-7 D33V0S1UG3LP20.pdf
D33V0S1UG3LP20-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 33VWM 40V UDFN20203
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 474pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 33V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 6660W (6.66kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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AL5887EV1
AL5887EV1
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL5887
Features: Dimmable
Packaging: Bulk
Voltage - Input: 2.7V ~ 5.5V
Contents: Board(s)
Current - Output / Channel: 70mA
Utilized IC / Part: AL5887
Outputs and Type: 36 Non-Isolated Outputs
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+401.13 EUR
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PD3S130HQ-7 PD3S130HQ.pdf
PD3S130HQ-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTK 30V 1A POWERDI 323
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 700 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
6000+0.29 EUR
15000+0.27 EUR
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